Gas showerhead and chemical vapor deposition apparatus

Abstract

The utility model discloses a gas shower head and chemical vapor deposition equipment. Gas shower head includes: the shower head body, and the shower head body has the gas cavity and first surface, the gas inlet is set up in the shower head body, and the gas inlet is linked with the gas cavity, a plurality of gas outlets are set up in the first surface, and a plurality of gas outlets are all linked with the gas cavity, and a plurality of gas outlets constitute a plurality of gas outlet groups that are arranged in turn and spaced from inside to outside, the gas outlet of each gas outlet group is annularly arranged, and the arrangement center of each gas outlet group is coincided with each other, wherein the gas outlet aperture of the gas outlet group on the inside is greater than the gas outlet aperture of the gas outlet group on the outside. The gas shower head provided by the embodiment of the application realizes the regulation and control of the gas flow by optimizing the aperture distribution of the gas outlet, improves the uniformity of the deposition film layer of the battery piece, and thus guarantees the performance and quality of the battery piece.

Description

Technical Field

[0001] This application relates to the field of battery production equipment technology, and in particular to a gas nozzle and chemical vapor deposition equipment. Background Technology

[0002] Plasma-enhanced chemical vapor deposition (PVD) plays a crucial role in solar cell production, primarily used to deposit thin films on the cell surface to improve cell performance. However, the uniformity of the deposited film has been a bottleneck restricting the development of PVD technology in traditional processes.

[0003] Most existing chemical vapor deposition nozzles employ a uniformly distributed circular orifice design. During gas flow, the gas velocity in the central region of the nozzle is excessively high, while the flow rate in the peripheral regions is insufficient. Furthermore, the reactant gases do not mix sufficiently after ejection, resulting in poor uniformity of the deposited film. Utility Model Content

[0004] This utility model discloses a gas nozzle and a chemical vapor deposition device. By optimizing the pore size distribution of the gas nozzle, the gas flow rate can be controlled, improving the uniformity of the deposited film on the solar cell and thus ensuring the performance and quality of the solar cell.

[0005] To achieve the above objectives, the first aspect of this utility model discloses a gas nozzle for use in a chemical vapor deposition apparatus, the gas nozzle comprising:

[0006] A nozzle body having an air-containing cavity and a first surface;

[0007] An air inlet is provided on the nozzle body, and the air inlet is connected to the air chamber;

[0008] Multiple air vents are disposed on the first surface, and all of the multiple air vents are connected to the air cavity. The multiple air vents form multiple air vent groups arranged sequentially from the inside to the outside. The air vents in each air vent group are arranged in a ring shape, and the arrangement centers of the corresponding air vent groups coincide with each other. The diameter of the air vents in the inner air vent group is larger than the diameter of the air vents in the outer air vent group.

[0009] As an optional implementation, the diameters of the air outlets in the same air outlet group are equal, and the diameters of the air outlets gradually decrease along the arrangement direction of the plurality of air outlet groups.

[0010] As an optional implementation, in two adjacent groups of vents, the difference between the diameter of the vent holes in the outer group and the diameter of the vent holes in the inner group is between 0.15 mm and 0.25 mm.

[0011] As an optional implementation, the spacing between any two adjacent groups of air outlets is equal, and within the same group of air outlets, the distance between any two adjacent air outlets is equal.

[0012] As an optional implementation, the plurality of air outlet groups include a first air outlet group and a second air outlet group. The first air outlet group is located inside the second air outlet group. The first air outlet group and the second air outlet group have the same number of air outlets and are correspondingly arranged. The air outlets in the first air outlet group are offset circumferentially relative to the corresponding air outlets in the second air outlet group.

[0013] As an optional implementation, the air outlet of the first air outlet group is the first air outlet, the corresponding air outlet in the second air outlet group is the second air outlet, the line connecting the center of the first air outlet and the center of the first air outlet group is the first line, the line connecting the center of the second air outlet and the center of the second air outlet group is the second line, and the included angle between the first line and the second line is 29.5° to 30.5°.

[0014] As an optional implementation, the gas nozzle further includes: a plurality of air guides, which are respectively disposed on the plurality of air outlets. The cross-sectional area of ​​the inner cavity of the air guides gradually decreases in the direction away from the first surface, and the air guides are used to guide the direction of the gas discharged from the air outlets.

[0015] As an optional implementation, the air guide has an interconnected mounting portion and an air guide portion, and the air guide has an air guide channel that passes through the mounting portion and the air guide portion, the air guide channel communicating with the air chamber, the mounting portion being configured to extend into the air outlet, and the mounting portion and the air outlet being interference-fitted to allow the mounting portion and the air outlet to be detachably connected.

[0016] As an optional implementation, the distance from the first surface to the end of the air guide away from the first surface is 0.25mm to 0.35mm.

[0017] The second aspect of this utility model discloses a chemical vapor deposition (CVD) apparatus, which includes: a coating chamber; and the gas nozzle described in the first aspect, disposed within the coating chamber, the gas nozzle being used to inject gas into the coating chamber.

[0018] Compared with the prior art, the beneficial effects of this application are:

[0019] The gas nozzle provided in this application embodiment, through an annular group of multiple outlet holes, and with the outlet hole diameter of the inner group being larger than that of the outer group, achieves the goal of ensuring thorough mixing of gas after entering the gas chamber, and ejecting it from each outlet hole at a uniform and stable flow rate and volume. This ensures the formation of a high-quality deposited film on the surface of the solar cell, improves the uniformity and stability of the deposited film, enhances the operating efficiency and reliability of the chemical vapor deposition equipment, reduces the consumption of process gas during film deposition, and reduces the risk of nozzle clogging. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This is a schematic diagram of the structure of a gas nozzle in the prior art;

[0022] Figure 2 This is one of the structural schematic diagrams of the gas nozzle provided in the embodiments of this application;

[0023] Figure 3 This is a second schematic diagram of the structure of the gas nozzle provided in the embodiments of this application;

[0024] Figure 4 This is the third schematic diagram of the gas nozzle provided in the embodiments of this application;

[0025] Figure 5 This is the fourth schematic diagram of the structure of the gas nozzle provided in the embodiments of this application;

[0026] Figure 6 yes Figure 5 A magnified view of a portion of point A in the middle.

[0027] Explanation of reference numerals in the attached figures:

[0028] 100-Gas nozzle; 1-Nozzle body; 1a-First surface; 2-Outlet group; 21-Outlet; 211-First outlet; 212-Second outlet; 211a-First connecting line; 212a-Second connecting line; 3-Gas guide. Detailed Implementation

[0029] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0030] In this application, the terms "upper," "lower," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing this application and its embodiments, and are not intended to limit the indicated devices, elements, or components to having a specific orientation, or to be constructed and operated in a specific orientation.

[0031] Furthermore, in addition to indicating location or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0032] Furthermore, the terms "setup" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0033] Furthermore, the terms "first," "second," etc., are primarily used to distinguish different devices, elements, or components (which may be the same or different in specific type and construction), and are not intended to indicate or imply the relative importance or quantity of the indicated devices, elements, or components. Unless otherwise stated, "a plurality of" means two or more.

[0034] Plasma-enhanced chemical vapor deposition (PECVD) is a core component in the solar cell manufacturing process. It plays a crucial role in accurately depositing various functional thin films on the cell substrate, thus improving the photoelectric conversion efficiency of solar cells, enhancing device stability, and optimizing electrical performance.

[0035] However, as Figure 1 As shown, Figure 1This is a schematic diagram of a gas nozzle in existing technology. Traditional chemical vapor deposition (CVD) equipment uses a uniformly distributed circular orifice design for its gas nozzles. This design results in excessively high gas velocity in the central region of the nozzle, while the flow rate is insufficient in the peripheral regions. This is mainly because, under the same pressure, the gas in the central region experiences relatively less resistance due to the difference in distance from the gas source and the effects of fluid dynamics. This makes it easier for the gas to exit from the central region, resulting in excessively high velocity in the central region and greater resistance in the peripheral regions, thus reducing the flow rate.

[0036] Due to a design flaw in the gas nozzle, the reactant gases were not sufficiently mixed after entering the reaction chamber, resulting in poor uniformity of the final film. In chemical vapor deposition (CVD), the reactant gases need to be thoroughly mixed before reacting on the cell surface to form a uniform film. If mixing is insufficient, the proportions of gas components will differ in different areas, affecting the uniformity of the deposited film. This non-uniform film will impact the photoelectric performance of the solar cell, reducing its conversion efficiency and stability.

[0037] In view of this, embodiments of this application disclose a gas nozzle and a chemical vapor deposition apparatus. By optimizing the pore size distribution of the gas outlet, the gas flow rate is controlled, improving the uniformity of the deposited film on the solar cell, thereby ensuring the performance and quality of the solar cell.

[0038] The technical solution of this application will be further described below with reference to the embodiments and accompanying drawings.

[0039] Please see Figure 2 and Figure 3 , Figure 2 This is one of the structural schematic diagrams of the gas nozzle 100 provided in the embodiments of this application. Figure 3 This is the second structural schematic diagram of the gas nozzle 100 provided in the embodiments of this application. The first aspect of this utility model discloses a gas nozzle 100, which includes: a nozzle body 1 having a gas-containing cavity and a first surface 1a; an air inlet disposed on the nozzle body 1 and communicating with the gas-containing cavity; and multiple air outlets 21 disposed on the first surface 1a, each air outlet 21 communicating with the gas-containing cavity. The multiple air outlets 2 form multiple air outlet groups 2 arranged sequentially from the inside out, with the air outlets 21 in each air outlet group 2 arranged in a ring shape, and the centers of the corresponding arrangements of each air outlet group 2 coinciding with each other. The diameter of the air outlets 21 in the inner air outlet group 2 is larger than the diameter of the air outlets 21 in the outer air outlet group 2.

[0040] As the fundamental component of the entire device, the nozzle body 1 provides a space for temporary storage and mixing of gas within its internal gas-containing chamber. This ensures that the gas entering the nozzle body 1 is fully mixed and reaches the homogeneous state required for deposition. This mixing process effectively avoids inconsistent film performance caused by gas component separation. The shape and volume of the gas-containing chamber ensure that the gas residence time within it is sufficiently long, thereby achieving thorough mixing and homogenization of the gas.

[0041] The air inlet ensures that gas enters the gas chamber at a stable and controllable flow rate. It can be understood that the size and shape of the air inlet determine the intake resistance and flow rate, thus affecting the overall nozzle efficiency and the uniformity of gas distribution. Optionally, the size of the air inlet can be determined according to the gases to be mixed, thereby ensuring that gas enters the gas chamber at the optimal flow rate under different process conditions, thus maintaining a stable process environment.

[0042] The annular vent group 2, composed of multiple vent groups 2, achieves large-area uniform gas coverage on the surface of the battery cell by being arranged sequentially and spaced out from the inside. Optionally, the vent group 2 can be arranged along a circular ring, a rectangular ring, or other polygonal rings. The arrangement of the vent group 2 is not limited in this embodiment.

[0043] Specifically, the diameter of the vent holes 21 in the inner vent group 2 is larger than that in the outer vent group 2. Based on fluid dynamics principles, this ensures uniform gas distribution on the surface of the solar cell. According to the law of conservation of mass, in steady-state flow:

[0044] ρ1A1v1=ρ2A2v2=const (1)

[0045] Where ρ1 is the gas density in the central region, A1 is the flow area in the central region, v1 is the gas velocity in the central region, ρ2 is the gas density in the edge region, A2 is the flow area in the edge region, and v2 is the gas velocity in the edge region.

[0046] According to the above formula (1), the larger the flow area of ​​the vent 21, the lower the gas velocity within the vent 21. The larger aperture of the inner vent group 2 allows for a suitable reduction in the gas velocity in the central region, while the smaller aperture of the outer vent group 2 helps to increase the gas velocity in the edge region, avoiding the problem of insufficient edge flow caused by excessively high gas velocity in the central region in traditional designs. This ensures the uniformity of gas flow.

[0047] The centers of each vent group 2 coincide, ensuring that the gas diffuses uniformly along the same central axis after ejection. This avoids uneven gas distribution and eddy currents caused by center offset, thereby improving gas deposition efficiency and film uniformity. By precisely controlling the geometric parameters and arrangement of each vent group 2, fine-tuning of gas flow can be achieved to meet different process requirements.

[0048] Thus, the gas nozzle 100 provided in this embodiment achieves the purpose of fully mixing the gas after it enters the gas chamber, and ejecting it from each gas outlet 21 with a uniform and stable flow rate and volume. This ensures the formation of a high-quality deposited film layer on the surface of the battery cell, improves the uniformity and stability of the deposited film layer, enhances the operating efficiency and reliability of the chemical vapor deposition equipment, reduces the consumption of process gas during film deposition, and reduces the risk of nozzle blockage.

[0049] Please see Figure 4 , Figure 4 This is the third schematic diagram of the structure of the gas nozzle 100 provided in the embodiments of this application. In some embodiments, the diameter of each air outlet 21 in the same air outlet group 2 is equal, and the diameter of the air outlet 21 gradually decreases along the arrangement direction of the multiple air outlet groups 2.

[0050] Specifically, all the vent holes 21 in the same vent hole group 2 have the same diameter, ensuring that the gas is ejected at the same velocity and flow rate within the same vent hole group 2. Because the vent holes 21 in the vent hole group 2 have the same diameter, the gas is subjected to uniform force, thus ensuring the uniformity of gas flow. This avoids inconsistent gas flow rates due to differences in vent hole diameter within the same annular vent hole group 2, thereby preventing local variations in film thickness and composition, which is crucial for the formation of a high-quality deposited film on the surface of the solar cell.

[0051] Meanwhile, the fact that all the vent holes 21 in the same vent hole group 2 have the same diameter also helps to reduce the mutual interference between the vent holes 21 in the same vent hole group 2, making the gas flow more stable and orderly, and further improving the uniformity of the film layer.

[0052] The design of gradually decreasing aperture along the arrangement direction of multiple vent groups 2 can effectively compensate for the gas flow characteristics in different regions. The gas velocity is high in the central region, and the large aperture can reduce the gas velocity in the central region to prevent excessive gas concentration; the gas velocity is low in the edge region, and the small aperture can increase the gas velocity in the edge region, so as to achieve uniform gas distribution on the surface of the cell and improve the uniformity of the film layer.

[0053] In addition, the gradually decreasing aperture along the arrangement direction of multiple vent groups 2 can optimize the gas mixing process. The large aperture in the central region promotes full gas mixing, while the small aperture in the edge region maintains stable gas flow, reducing the problem of gas stratification or insufficient mixing caused by low flow rate. This makes the gas composition and reaction conditions on the surface of the cell uniform, improving the quality and consistency of the film layer.

[0054] Please see Figure 4 In some embodiments, the difference between the diameter of the air outlet 21 in the outer air outlet group 2 and the diameter of the air outlet 21 in the inner air outlet group 2 is between 0.15 mm and 0.25 mm.

[0055] First, by controlling the aperture difference between adjacent vent groups 2 within the range of 0.15mm to 0.25mm, the surface reaction rate distribution characteristics of the solar cell can be matched according to the exponential decay model, achieving fine-grained adjustment of gas flow rate and velocity. If the aperture difference between adjacent vent groups 2 is too small, it cannot effectively compensate for the gas velocity differences in different regions; if the aperture difference between adjacent vent groups 2 is too large, it may lead to uneven gas flow distribution, causing new non-uniformity problems. An aperture difference of 0.15mm to 0.25mm ensures that the gas velocity in the central and edge regions tends to be balanced within a reasonable range, further improving the uniformity of gas distribution.

[0056] Secondly, an aperture difference between 0.15 mm and 0.25 mm helps optimize gas deposition on the cell surface. The gradual change in aperture between adjacent vent groups 2 allows for a smoother flow transition after gas ejection, reducing eddies and backflow caused by abrupt aperture changes. This not only improves the mixing efficiency of the reactant gases but also makes the thickness and composition of the deposited film more uniform, thereby enhancing the photoelectric conversion efficiency and stability of the cell.

[0057] Finally, an orifice difference within the range of 0.15 mm to 0.25 mm further enhances the adaptability and reliability of the gas nozzle 100. In actual production, process conditions may vary due to factors such as equipment fluctuations and changes in gas composition. By controlling the orifice difference within a reasonable range, the gas nozzle 100 can better adapt to these changes and maintain stable gas distribution performance.

[0058] Please see Figure 4 In some embodiments, the spacing between any two adjacent air outlet groups 2 is equal, and within the same air outlet group 2, the distance between any two adjacent air outlets 21 is equal.

[0059] Specifically, the spacing between any two adjacent groups of vents 2 is equal, ensuring uniform gas distribution across the different groups of vents 2. During gas flow, the equal spacing helps avoid uneven gas velocity caused by excessively large or small spacing, thus ensuring that the gas can uniformly cover the entire surface of the solar cell. This uniform spacing design helps reduce turbulence and eddies within the nozzle, allowing the gas to reach a more stable and uniform flow state before entering the reaction zone.

[0060] Meanwhile, equal spacing also helps optimize the gas diffusion path, ensuring that the reactive gas can be deposited at similar concentrations and flow rates in various areas of the cell surface, thereby improving the uniformity and consistency of the film. In addition, the equal spacing design facilitates the manufacture and maintenance of the nozzle, ensuring the precise arrangement of each gas outlet group 2 on the nozzle body 1, and improving the reliability and stability of the equipment.

[0061] Please see Figure 4 In some embodiments, the plurality of air outlet groups 2 include a first air outlet group and a second air outlet group. The first air outlet group is located inside the second air outlet group. The number of air outlets 21 in the first air outlet group and the second air outlet group are the same and are correspondingly arranged. The air outlets 21 in the first air outlet group are offset from the corresponding air outlets 21 in the second air outlet group along the circumferential direction of the air outlet group 2.

[0062] Specifically, the first vent group is located inside the second vent group, which conforms to the principles of gas dynamics and can better guide the gas flow direction, allowing the gas to cover the silicon wafer surface more evenly. By controlling the larger aperture of the inner vent group 2 and the smaller aperture of the outer vent group 2, the gas velocity and flow rate in different areas can be effectively adjusted.

[0063] The first and second vent groups have the same number of vents 21, which are correspondingly arranged to help form a regular flow pattern after the gas is ejected. The same number and corresponding vents 21 ensure a more uniform gas distribution in different areas.

[0064] The vent holes 21 in the first vent hole group are offset circumferentially from the corresponding vent holes 21 in the second vent hole group. This offset arrangement disrupts the superposition advantage of unidirectional vortices generated by the traditional concentric circle arrangement, enhances gas micro-mixing, and makes the reaction gas mixture more uniform. This offset arrangement effectively reduces vortices and backflow phenomena formed after gas ejection, improving the uniformity and stability of gas distribution.

[0065] In addition, the circumferential offset setting not only improves the uniformity and stability of the deposited film, but also enhances the operating efficiency and reliability of the chemical vapor deposition equipment, reduces the consumption of process gases, and reduces the risk of nozzle clogging.

[0066] Please see Figure 4 In some embodiments, the air outlet 21 of the first air outlet group is the first air outlet 211, and the corresponding air outlet 21 in the second air outlet group is the second air outlet 212. The line connecting the center of the first air outlet 211 and the center of the first air outlet group is the first connecting line 211a, and the line connecting the center of the second air outlet 212 and the center of the second air outlet group is the second connecting line 212a. The included angle between the first connecting line 211a and the second connecting line 212a is 29.5° to 30.5°.

[0067] In traditional designs, the concentric arrangement of the air outlets 2 tends to result in a uniform gas flow direction, leading to larger vortices and affecting the uniform distribution of the gas. However, by setting the angle between the first connecting line 211a and the second connecting line 212a to 29.5° to 30.5°, this uniformity can be broken, allowing the gas to flow in multiple directions after ejection, reducing the formation of vortices and improving the gas mixing efficiency.

[0068] Furthermore, the angle between the first connecting line 211a and the second connecting line 212a is 29.5° to 30.5°, which enhances the micro-mixing effect of the gas, allowing the reactant gases to mix more thoroughly before entering the reaction zone, thereby improving the uniformity of gas distribution and reaction efficiency.

[0069] The angle between the first connecting line 211a and the second connecting line 212a, which is 29.5° to 30.5°, also helps optimize the gas deposition effect on the silicon wafer surface. By precisely controlling the offset angle of the gas outlets 21 between adjacent gas outlet groups 2, a more uniform coating layer can be formed after the gas is ejected, reducing film thickness differences caused by uneven gas flow. This is crucial for improving the quality and consistency of the deposited film, and can significantly enhance the photoelectric conversion efficiency and stability of solar cells.

[0070] Furthermore, by controlling the offset angle of the outlet 21, the adaptability and reliability of the gas nozzle 100 can be enhanced. In actual production, process conditions may vary due to factors such as equipment fluctuations and changes in gas composition. By controlling the offset angle within a reasonable range, the gas nozzle 100 can better adapt to these changes and maintain stable gas distribution performance.

[0071] Please see Figure 1 and Figure 5 , Figure 5 This is the fourth structural schematic diagram of the gas nozzle 100 provided in the embodiments of this application. In some embodiments, the gas nozzle 100 further includes: a plurality of air guides 3, which are respectively disposed on a plurality of air outlets 21. The cross-sectional area of ​​the inner cavity of the air guide 3 gradually decreases in the direction away from the first surface 1a. The air guide 3 is used to guide the direction of the gas discharged from the air outlets 21.

[0072] By incorporating a gas guide 3 within the vent 21, the flow direction of the gas can be effectively guided. As the gas guide 3 extends away from the first surface 1a, the cross-sectional area of ​​its inner cavity gradually decreases, creating a localized acceleration effect on the gas. This acceleration effect helps to strip away the viscous boundary layer at the nozzle exit, extending the length of the reactive gas jet core region, allowing the gas to more uniformly cover the silicon wafer surface, and improving the uniformity of the deposited film.

[0073] Meanwhile, the design of the gas guide 3 can also reduce the gas diffusion angle, making the gas more concentrated after ejection and reducing secondary backflow of gas in the near field of the nozzle. This reduces fluctuations in the deposition rate and improves the stability and quality of the film. In this way, the gas guide 3 not only optimizes the gas flow characteristics but also enhances the gas mixing efficiency, allowing the reactive gas to participate more fully in the deposition reaction, improving the utilization rate of process gases and reducing the consumption of process gases.

[0074] In addition, the design of the air guide 3 can reduce the risk of nozzle clogging. Even if a single point of clogging occurs, only the clogged air outlet needs to be replaced, without replacing the entire nozzle, thus reducing maintenance costs and the risk of production interruption.

[0075] Please see Figure 5 In some embodiments, the air guide 3 has an interconnected mounting portion and an air guide portion, and the air guide 3 has an air guide channel that passes through the mounting portion and the air guide portion. The air guide channel communicates with the air chamber. The mounting portion is configured to extend into the air outlet 21. The mounting portion and the air outlet 21 are interference-fitted so that the mounting portion and the air outlet 21 are detachably connected.

[0076] Specifically, the interference fit between the mounting part and the air outlet 21 ensures the stability of the air guide 3 after installation. The interference fit prevents the air guide 3 from shifting or loosening due to the impact force generated by the gas flow during operation, thereby ensuring the stability of the gas flow direction and flow rate.

[0077] Meanwhile, the interference fit connection facilitates the disassembly and replacement of the gas guide component 3. When maintenance or replacement of the gas guide component 3 is required, there is no need for complex operations on the entire nozzle; simply remove the clogged or damaged gas guide component 3 and replace it with a new one. This reduces equipment maintenance and time costs, and improves the operating efficiency and reliability of the chemical vapor deposition equipment.

[0078] Please see Figure 6 , Figure 6 yes Figure 5The enlarged schematic diagram at point A shows that, in some embodiments, the distance from the first surface 1a to the end of the air guide 3 away from the first surface 1a is d1, where d1 is 0.25mm to 0.35mm.

[0079] By precisely controlling the length of the gas guide 3, it is ensured that the gas can quickly reach a stable flow state after being ejected from the gas guide 3. Setting the distance between the end of the gas guide 3 furthest from the first surface 1a and the first surface 1a to 0.25mm to 0.35mm optimizes the initial diffusion path of the gas. This distance range helps the gas to quickly form a stable jet after ejection, reduces the diffusion angle of the gas after ejection, and thus improves the uniform distribution of the gas on the silicon wafer surface.

[0080] Meanwhile, the distance between the end of the gas guide 3 furthest from the first surface 1a and the first surface 1a is set to 0.25mm to 0.35mm. This ensures that after the gas is ejected from the gas guide 3, a uniform coating layer can be formed on the silicon wafer surface, reducing the edge effect caused by excessive gas diffusion and improving the uniformity and stability of the deposited film. This also reduces secondary backflow near the vent hole 21.

[0081] Optionally, the tilt angle of the gas guide 3 can be 45°. A 45° tilt angle approximates a streamlined design, allowing for smoother gas flow within the inner wall of the gas guide 3. This helps reduce gas flow separation and vortex formation, thereby lowering fluid resistance. When gas enters the gas guide at a 45° angle, the gas flow path is smoother, reducing energy loss caused by abrupt changes in flow direction. Furthermore, a 45° tilt angle approximates the diffusion angle of naturally flowing gas, facilitating natural gas diffusion within the gas guide and reducing additional resistance caused by forced changes in gas flow direction.

[0082] A second aspect of this application provides a chemical vapor deposition apparatus, comprising: a coating chamber; and a gas nozzle 100 as described in the first aspect, disposed within the coating chamber, the gas nozzle 100 being used to inject gas into the coating chamber. It is understood that the chemical vapor deposition apparatus employing the gas nozzle 100 of the above embodiments has all the technical effects of the gas nozzle 100 of the above embodiments, and will not be repeated here.

[0083] The coordinated operation of the gas nozzle 100 and the coating chamber is crucial for achieving efficient chemical vapor deposition (CVD) processes. The gas nozzle 100 provides a uniform and stable gas supply, while the coating chamber provides a suitable environment and controlled conditions for the deposition reaction. Through precise design and optimization of the gas nozzle 100, CVD equipment can achieve a more efficient and uniform thin film deposition process within the coating chamber, improving production efficiency, reducing production costs, and enhancing the performance and reliability of manufactured devices such as solar cells.

[0084] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A gas nozzle for use in a chemical vapor deposition apparatus, characterized in that, The gas nozzle includes: A nozzle body having an air-containing cavity and a first surface; An air inlet is provided on the nozzle body, and the air inlet is connected to the air chamber; Multiple air vents are disposed on the first surface, and all of the multiple air vents are connected to the air cavity. The multiple air vents form multiple air vent groups arranged sequentially from the inside to the outside. The air vents in each air vent group are arranged in a ring shape, and the arrangement centers of the corresponding air vent groups coincide with each other. The diameter of the air vents in the inner air vent group is larger than the diameter of the air vents in the outer air vent group.

2. The gas nozzle according to claim 1, characterized in that, The diameters of the air outlets in the same air outlet group are equal, and the diameters of the air outlets gradually decrease along the arrangement direction of the multiple air outlet groups.

3. The gas nozzle according to claim 2, characterized in that, In two adjacent groups of vents, the difference between the diameter of the vent in the outer group and the diameter of the vent in the inner group is between 0.15 mm and 0.25 mm.

4. The gas nozzle according to claim 1, characterized in that, The spacing between any two adjacent groups of air outlets is equal, and within the same group of air outlets, the distance between any two adjacent air outlets is equal.

5. The gas nozzle according to claim 1, characterized in that, The plurality of air outlet groups include a first air outlet group and a second air outlet group. The first air outlet group is located inside the second air outlet group. The number of air outlets in the first air outlet group and the second air outlet group are the same and are correspondingly arranged. The air outlets in the first air outlet group are offset circumferentially relative to the corresponding air outlets in the second air outlet group.

6. The gas nozzle according to claim 5, characterized in that, The air outlet in the first air outlet group is the first air outlet, and the corresponding air outlet in the second air outlet group is the second air outlet. The line connecting the center of the first air outlet and the center of the first air outlet group is the first line, and the line connecting the center of the second air outlet and the center of the second air outlet group is the second line. The included angle between the first line and the second line is 29.5° to 30.5°.

7. The gas nozzle according to any one of claims 1-6, characterized in that, The gas nozzle also includes: Multiple air guides are provided, each of which is disposed at a multiple air outlet. The cross-sectional area of ​​the inner cavity of each air guide gradually decreases in the direction away from the first surface. The air guides are used to guide the direction of the gas discharged from the air outlet.

8. The gas nozzle according to claim 7, characterized in that, The air guide has an interconnected mounting portion and an air guide portion, and the air guide has an air guide channel that passes through the mounting portion and the air guide portion. The air guide channel communicates with the air chamber. The mounting portion is configured to extend into the air outlet. The mounting portion and the air outlet are interference-fitted so that the mounting portion and the air outlet are detachably connected.

9. The gas nozzle according to claim 7, characterized in that, The distance from the first surface to the end of the air guide away from the first surface is 0.25mm to 0.35mm.

10. A chemical vapor deposition apparatus, characterized in that, The chemical vapor deposition equipment includes: Coating cavity; The gas nozzle as described in any one of claims 1-9 is disposed within the coating cavity, and the gas nozzle is used to inject gas into the coating cavity.

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