Gas supply stable semiconductor production vapor phase epitaxy furnace

Abstract

The utility model relates to the technical field of semiconductor manufacturing discloses a gas supply stable semiconductor production is with gas phase epitaxial furnace, including device body, the device body includes furnace body, the top and bottom of furnace body outer surface are covered with sealing cover, the top fixed mounting of furnace body has the upper baffle, the top of upper baffle is established and has the feed inlet, the bottom fixed mounting of furnace body has the lower baffle. The utility model discloses a product and gas from feed inlet to mixing tank again to mixing assembly, experienced the mixing of multiple structures, first preliminary mixing in mixing tank, then gradually adjust the flow path of product and gas in mixing assembly through the structure such as drainage groove, mixing seat, confluence groove, realize multilevel, progressive mixing, this kind of mixing mode can make gas and product more evenly mixed, avoid the situation that local concentration is too high or too low, be favorable to form high quality, the good uniformity epitaxial layer in semiconductor production.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to a vapor phase epitaxy furnace for semiconductor production with stable gas supply. Background Technology

[0002] As integrated circuits develop towards smaller feature sizes, higher integration density, and better performance, the quality requirements for semiconductor materials are becoming increasingly stringent. When manufacturing high-performance microprocessors, memory chips, and other integrated circuit devices, it is necessary to grow high-quality, uniform epitaxial layers on silicon wafers to improve the electrical performance of the devices and increase carrier mobility.

[0003] The "A Gas Phase Epitaxy Furnace for Semiconductor Production with Stable Gas Supply" disclosed in publication number "CN214655362U" has solved many drawbacks of existing gas phase epitaxy furnaces that cannot guarantee that the gas can react uniformly with the products inside the furnace. However, in actual use, gas phase epitaxy furnaces still have defects, such as insufficient mixing of products with different gases in existing gas phase epitaxy furnaces. Therefore, it is necessary to design a gas phase epitaxy furnace for semiconductor production with stable gas supply. Utility Model Content

[0004] To solve the above-mentioned technical problems, this utility model provides a vapor phase epitaxy furnace for semiconductor production with stable gas supply.

[0005] This utility model is achieved using the following technical solution: a vapor phase epitaxy furnace for semiconductor production with stable gas supply, comprising a device body, the device body including a furnace body, a sealing cover fitted onto the top and bottom of the outer surface of the furnace body, an upper cover plate fixedly installed on the top of the furnace body, a feed inlet on the top of the upper cover plate, and a lower cover plate fixedly installed on the bottom of the furnace body, a discharge outlet on the bottom of the lower cover plate, and further comprising:

[0006] A support assembly, comprising a support frame, wherein a mixing tank is disposed inside the support frame, and a discharge chute is provided on the outer surface of the mixing tank;

[0007] A mixing assembly, the mixing assembly including an inlet plate, a mixing seat being disposed at the bottom of the inlet plate, and a worm gear fan blade being disposed at the bottom of the mixing seat.

[0008] As a further improvement to the above solution, a support frame is fixedly installed on the inner wall of the furnace body, and a support rod is fixedly installed on the top of the support frame.

[0009] The above technical solution involves installing a support frame on the inner wall of the furnace and a support rod on top of the support frame. This structural design provides stable support for the mixing tank that is installed later. In the semiconductor production process, the internal structure of the vapor phase epitaxy furnace needs to remain stable to ensure the accuracy of various physical and chemical processes.

[0010] As a further improvement to the above solution, a mixing tank is fixedly installed on the inner wall of the support rod, and a diversion plate is fixedly installed at the center of the inner wall of the mixing tank.

[0011] As a further improvement to the above solution, an inlet plate is fixedly installed inside the mixing tank, and a flow channel is opened inside the inlet plate.

[0012] Through the above technical solution, the flow channel can regulate the flow path of gas and product, so that they can be initially mixed in an orderly manner after entering the mixing tank. This helps to achieve relatively uniform mixing in the early stage of the mixing process, laying the foundation for subsequent deep mixing.

[0013] As a further improvement to the above solution, a mixing seat is fixedly installed at the bottom of the inlet plate, and a confluence groove is opened inside the mixing seat, which matches the guide groove.

[0014] Through the above technical solution, the gas and products flowing in from the inlet channel can smoothly enter the mixing seat through the manifold. This continuity helps to maintain the stability and uniformity of the mixing process. When different parts of the gas and products pass through this series of structures, they can be mixed in an orderly manner according to the designed process, avoiding uneven mixing or local over-mixing.

[0015] As a further improvement to the above solution, a support box is fixedly installed at the bottom of the drainage plate, and an installation plate is fixedly installed on the inner wall of the support box.

[0016] Through the above technical solution, when the gas and product are mixed, the rotation of the worm gear fan blades can break the possible stratification or local unevenness between the gas and product, so that they can be mixed more thoroughly.

[0017] As a further improvement to the above solution, a worm gear fan blade is rotatably mounted on the top of the mounting plate, and a filter plate is fixedly mounted on the bottom of the mounting plate.

[0018] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0019] This invention achieves multi-level, gradual mixing of the product and gas through multiple structures from the inlet to the mixing tank and then to the mixing assembly. First, the product and gas are initially mixed in the mixing tank. Then, in the mixing assembly, the flow paths of the product and gas are gradually adjusted through structures such as the guide channel, mixing seat, and manifold, thus realizing multi-level, gradual mixing. This mixing method can make the gas and product mix more evenly, avoiding situations where the local concentration is too high or too low, which is beneficial for forming high-quality, uniform epitaxial layers in semiconductor production.

[0020] This invention utilizes the product's descent to drive the worm gear fan blades to further mix the product and gas. This mixing method not only utilizes the product's own gravity, eliminating the need for additional power equipment to drive the fan blades and saving energy, but also breaks up any potential localized stable states, allowing for more thorough contact between gas and product molecules, further improving the uniformity of the mixture, thereby contributing to improved quality and stability of semiconductor epitaxial growth. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the overall structure of this utility model;

[0022] Figure 2 This is a schematic diagram of the structure of this utility model;

[0023] Figure 3 This is a schematic diagram of the structure of this utility model;

[0024] Figure 4 This is a schematic diagram of the overall structure of this utility model;

[0025] Figure 5 This is a schematic diagram of the overall structure of this utility model.

[0026] Explanation of key symbols:

[0027] 1. Device body; 101. Furnace body; 102. Sealing cover; 103. Upper cover plate; 104. Feed inlet; 105. Lower cover plate; 106. Discharge outlet; 2. Support assembly; 201. Support frame; 202. Support rod; 203. Mixing tank; 204. Diversion plate; 205. Discharge chute; 3. Mixing assembly; 301. Inlet plate; 302. Diversion chute; 303. Mixing seat; 304. Merging chute; 305. Support box; 306. Mounting plate; 307. Worm gear fan blade; 308. Filter plate. Detailed Implementation

[0028] The present invention will be further described below with reference to the accompanying drawings and specific embodiments. It should be noted that, without conflict, the various embodiments or technical features described below can be arbitrarily combined to form new embodiments.

[0029] Example:

[0030] Please combine Figure 1-5 This embodiment of a vapor phase epitaxy furnace for semiconductor manufacturing with stable gas supply includes a device body 1, which includes a furnace body 101. A sealing cover 102 is fitted onto the top and bottom of the outer surface of the furnace body 101. An upper cover plate 103 is fixedly installed on the top of the furnace body 101, with a feed inlet 104 at the top of the upper cover plate 103. A lower cover plate 105 is fixedly installed on the bottom of the furnace body 101, with a discharge outlet 106 at the bottom of the lower cover plate 105. The furnace body also includes:

[0031] Support component 2 includes a support frame 201, a mixing tank 203 is provided inside the support frame 201, and a discharge chute 205 is provided on the outer surface of the mixing tank 203;

[0032] The mixing component 3 includes an inlet plate 301, a mixing seat 303 is provided at the bottom of the inlet plate 301, and a worm gear fan blade 307 is provided at the bottom of the mixing seat 303.

[0033] A support frame 201 is fixedly installed on the inner wall of the furnace body 101, and a support rod 202 is fixedly installed on the top of the support frame 201.

[0034] The support frame 201 and support rod 202 provided in the support assembly 2 can support the mixing tank 203, ensuring that the mixing tank 203 is at the bottom of the furnace body 101 and that the top of the mixing tank 203 is in contact with the feed inlet 104.

[0035] A mixing tank 203 is fixedly installed on the inner wall of the support rod 202, and a diversion plate 204 is fixedly installed at the center of the inner wall of the mixing tank 203.

[0036] An inlet plate 301 is fixedly installed inside the mixing tank 203, and a flow channel 302 is opened inside the inlet plate 301.

[0037] A mixing seat 303 is fixedly installed at the bottom of the inlet plate 301. A confluence groove 304 is provided inside the mixing seat 303, and the confluence groove 304 matches the inlet groove 302.

[0038] When the product is poured in, it will enter the mixing tank 203. Then the gas is transported from the feed port 104 into the mixing tank 203. At this time, the gas and the product will pass through the mixing component 3. Using the guide channel 302 opened in the inlet plate 301, the product and the gas will enter the mixing seat 303 along the guide channel 302 and flow into the guide plate 204 through the guide channel 304.

[0039] A support box 305 is fixedly installed at the bottom of the diversion plate 204, and an installation plate 306 is fixedly installed on the inner wall of the support box 305.

[0040] A worm gear fan blade 307 is rotatably mounted on the top of the mounting plate 306, and a filter plate 308 is fixedly mounted on the bottom of the mounting plate 306.

[0041] The diversion plate 204 ensures that the product and gas flow into the support box 305. At this time, the product descends and drives the worm gear fan blade 307 on the top of the mounting plate 306 to rotate, further mixing the product and gas. This enhances the mixing effect without the need for an additional power source. Then, the product flows to the bottom of the mixing tank 203 through the filter plate 308.

[0042] The implementation principle of a gas-stable vapor phase epitaxial furnace for semiconductor production in this application embodiment is as follows: The product is poured into the furnace body 101 through the feed inlet 104. Since the top of the mixing tank 203 is located at the bottom of the feed inlet 104, the product enters the mixing tank 203 when it is poured in. Gas is then transported from the feed inlet 104 into the mixing tank 203. At this time, the gas and product pass through the mixing component 3. Utilizing the guide channel 302 opened in the inlet plate 301, the product and gas flow along the guide channel 302 into the mixing seat 303, and then through… The product flows through the guide of the manifold 304 to the guide plate 204, which ensures that the product and gas flow into the support box 305. At this time, the product descends and drives the worm gear fan blade 307 on the top of the mounting plate 306 to rotate, further mixing the product and gas. This enhances the mixing effect without the need for an additional power source. Then, the product flows through the filter plate 308 to the bottom of the mixing tank 203. Finally, the mixed product flows through the discharge chute 205 to the lower cover plate 105 for sedimentation, thus allowing the various gases and the product to react fully.

[0043] When the mixing component 3 mixes the product with the gas, the support frame 201 and support rod 202 provided in the support component 2 can support the mixing tank 203, ensuring that the mixing tank 203 is at the bottom of the furnace body 101 and that the top of the mixing tank 203 is in contact with the feed port 104. The upper cover plate 103 and the lower cover plate 105 can be installed through the sealing cover 102 provided on the surface of the device body 1. After the product has settled, it can be discharged from the device body 1 through the discharge port 106.

[0044] The above embodiments are merely preferred embodiments of this utility model and should not be construed as limiting the scope of protection of this utility model. Any non-substantial changes and substitutions made by those skilled in the art based on this utility model shall fall within the scope of protection claimed by this utility model.

Claims

1. A vapor phase epitaxy furnace for semiconductor manufacturing with stable gas supply, comprising a device body (1), the device body (1) including a furnace body (101), a sealing cover (102) sleeved on the top and bottom of the outer surface of the furnace body (101), an upper cover plate (103) fixedly installed on the top of the furnace body (101), a feed inlet (104) opened on the top of the upper cover plate (103), a lower cover plate (105) fixedly installed on the bottom of the furnace body (101), and a discharge outlet (106) opened on the bottom of the lower cover plate (105), characterized in that, Also includes: Support assembly (2), the support assembly (2) includes a support frame (201), the inside of the support frame (201) is provided with a mixing tank (203), and the outer surface of the mixing tank (203) is provided with a discharge chute (205); A mixing component (3) includes an inlet plate (301), a mixing seat (303) is provided at the bottom of the inlet plate (301), and a worm gear fan blade (307) is provided at the bottom of the mixing seat (303).

2. The vapor phase epitaxy furnace for stable supply of gas for semiconductor production according to claim 1, wherein: A support frame (201) is fixedly installed on the inner wall of the furnace body (101), and a support rod (202) is fixedly installed on the top of the support frame (201).

3. The vapor phase epitaxy furnace for stable supply of gas according to claim 2, wherein: A mixing tank (203) is fixedly installed on the inner wall of the support rod (202), and a diversion plate (204) is fixedly installed at the center of the inner wall of the mixing tank (203).

4. The vapor phase epitaxy furnace for stable supply of gas according to claim 3, wherein: An inlet plate (301) is fixedly installed inside the mixing tank (203), and a flow channel (302) is provided inside the inlet plate (301).

5. The vapor phase epitaxy furnace for stable supply of gas according to claim 4, wherein: A mixing seat (303) is fixedly installed at the bottom of the inlet plate (301). A confluence groove (304) is provided inside the mixing seat (303), and the confluence groove (304) matches the inlet groove (302).

6. The vapor phase epitaxy furnace for stable supply of gas according to claim 3, wherein: A support box (305) is fixedly installed at the bottom of the diversion plate (204), and an installation plate (306) is fixedly installed on the inner wall of the support box (305).

7. The vapor phase epitaxy furnace for stable supply of gas according to claim 6, wherein: A worm gear fan blade (307) is rotatably mounted on the top of the mounting plate (306), and a filter plate (308) is fixedly mounted on the bottom of the mounting plate (306).

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