A continuous crystal pulling furnace

Abstract

The utility model belongs to the technical field of crystal pulling single crystal furnace, specifically discloses a kind of continuous crystal pulling single crystal furnace, including controller and weighing material cabin, the controller is installed with pipeline, the end of the pipeline is communicated to the inside of weighing material cabin, the weighing material cabin is connected with and is provided with argon gas filling cabin, the argon gas filling cabin is connected with and is provided with melting cabin, the melting cabin is connected with and is provided with crystal pulling cabin, the side of the crystal pulling cabin is provided with transfer code mechanism, silicon melt in melting cabin is introduced into crystal pulling cabin by tantalum tube, and its imported silicon melt is isolated by quartz glass spacer ring, so that crystal pulling area is stable, argon gas is introduced into to protect crystal pulling cabin and melting cabin from oxidation, melting cabin is separated from crystal pulling cabin, crystal bar can continuously crystallize and grow from stable melt, silicon crystal oxygen content is minimum, doping concentration head-tail consistency is improved, monocrystalline silicon rod quality and yield are both improved, suitable for the manufacture of N-type silicon wafer.

Description

Technical Field

[0001] This utility model belongs to the technical field of crystal pulling single crystal furnaces, and specifically relates to a continuous crystal pulling single crystal furnace. Background Technology

[0002] A continuous crystal pulling furnace is an advanced piece of equipment used to produce single crystal silicon. During the single crystal pulling process, the furnace can pull the crystal while simultaneously feeding and melting materials. It uses a graphite heater to melt polycrystalline materials such as polycrystalline silicon, and through the Czochralski method, silicon atoms are arranged in an orderly manner on the seed crystal to grow a single crystal silicon rod with no or very few dislocations.

[0003] Traditional single-crystal furnaces mostly employ intermittent crystal pulling processes when producing single-crystal silicon. In this process, production must be paused after each crystal pulling cycle to allow for the addition of silicon material before the next cycle can begin. This intermittent process consumes a significant amount of time due to the series of operations involved in each pull, including furnace shutdown, material replenishment, and reheating. This lengthens the overall production cycle and makes it difficult to effectively increase the yield of single-crystal silicon per unit time. For large-scale production demands, this inefficient production method severely restricts the industry's development speed. Utility Model Content

[0004] The purpose of this invention is to provide a continuous crystal pulling single crystal furnace to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, this utility model provides the following technical solution: A continuous crystal pulling single crystal furnace includes a controller, a weighing chamber, and a crystal pulling chamber. A pipe is installed on the controller, and the end of the pipe is connected to the interior of the weighing chamber. An argon-filled gas chamber is connected to the weighing chamber, and a melting chamber is connected to the argon-filled gas chamber. The melting chamber is located inside the crystal pulling chamber, and the melting chamber and the crystal pulling chamber are interconnected. A transfer and stacking mechanism is provided on the side of the crystal pulling chamber, and a quantitative automatic feeding mechanism is provided inside the weighing chamber. The quantitative automatic feeding mechanism includes a weight sensor installed inside the weighing chamber. The weight sensor is connected to the controller via a digital signal. An automatic gate valve is installed inside the weighing chamber. Silicon material is installed inside the weighing chamber. A first image observer is installed on the top of the weighing chamber. The argon-filled gas chamber is equipped with an automatic valve with a slide gate, a silicon level sensor, and a second image observer at the end of the argon-filled gas chamber. A second argon-filling valve is connected to the interior of the argon-filled gas chamber, and a pressure gauge is connected to the second argon-filling valve.

[0006] Preferably, a third image observer is provided at the end of the melting chamber, an argon gas filling valve is provided inside the melting chamber, a second pressure gauge is provided on the argon gas filling valve, a crucible is provided inside the melting chamber, the crucible can be square or round, and the crucible is made of any one of three materials: quartz glass, quartz glass with silicon nitride coating on the inner surface, and silicon nitride. A second graphite heater is provided inside the melting chamber, and refractory bricks are provided inside the melting chamber.

[0007] Preferably, a temperature sensor is installed inside the melting chamber, the temperature sensor is located below the crucible, and an exhaust valve is connected to the inside of the melting chamber.

[0008] Preferably, the melting chamber is provided with a flow guide tantalum tube, the crucible is provided with melt, the melting chamber is provided with a partition, and a tantalum filter screen is provided between the bottom of the melting chamber and the flow guide tantalum tube.

[0009] Preferably, a fourth image observer is provided on the top of the crystal pulling chamber, a circular crucible is provided inside the crystal pulling chamber, the circular crucible is made of either quartz glass or quartz glass with silicon nitride coating on the inner surface, a quartz glass spacer is provided inside the crystal pulling chamber, and a graphite heater is provided inside the crystal pulling chamber.

[0010] Preferably, the interior of the crystal pulling chamber is provided with crystal chamber refractory bricks, and the interior of the crystal pulling chamber is connected to an argon gas replenishment pipe, on which a third pressure gauge is installed.

[0011] Preferably, the crystal pulling chamber is internally connected to a crystal chamber exhaust pipe, the crystal chamber exhaust pipe is equipped with an exhaust pressure gauge, the crystal pulling chamber is internally equipped with a crucible rotating support rod and a seed crystal, and the crystal pulling chamber is internally equipped with a crystal rod.

[0012] Preferably, the transfer and stacking mechanism includes a slide rail, a first compartment, a second compartment, and a turnover cart. The slide rail is equipped with a first servo motor drive group and a second servo motor drive group. The turnover cart is equipped with a robotic arm. The first compartment and the second compartment are equipped with a counterweight clamp.

[0013] Compared with the prior art, the beneficial effects of this utility model are: Continuous crystal pulling can be achieved through the coordinated operation of the weighing tank, argon-filled tank, melting tank, crystal pulling tank, and transfer and stacking mechanism. The entire process, from silicon material feeding and melting to crystal pulling and crystal rod transfer and stacking, is automated and uninterrupted. Silicon melting and crystal growth are separated into two tanks, and the silicon melt is guided to the crystal growth pool through a tantalum tube. The crystal growth environment is stable, and the contact area between silicon and silicon dioxide is reduced. The volume of the crystal melt is stable, the doping concentration is consistent, the oxygen content of the crystal rod is low, and defects are minimized. This avoids the process of disassembling the old crucible, reloading, and remelting in the intermittent production of traditional single crystal furnaces. The crystal pulling time is extended, the production cycle is shortened, and the output of single crystal silicon per unit time is significantly increased. It is more suitable for the production of the now common N-type single crystal silicon. At the same time, by integrating the melting tank into the crystal pulling tank, the problems of large equipment space occupation and difficult installation can be solved.

[0014] The molten silicon in the melting chamber is introduced into the crystal pulling chamber through a tantalum tube, and the introduced molten silicon is isolated by a quartz glass spacer ring to stabilize the crystal pulling area. Argon gas is introduced to protect the crystal pulling chamber and the melting chamber from oxidation. The melting chamber and the crystal pulling chamber are separated, and the crystal rod can continuously crystallize and grow from the stable melt. The silicon crystal has the lowest oxygen content, the doping concentration is more consistent from beginning to end, and the quality and yield of the single crystal silicon rod are improved, which is suitable for the manufacture of N-type silicon wafers.

[0015] Because solid silicon has a higher specific gravity than molten silicon, the molten silicon in the melting chamber is separated by a quartz glass partition, which filters out unmelted silicon particles. The pressure difference across the partition forces the fully molten silicon into the left side of the partition, where it is injected into the crystal pulling chamber via overflow control. To ensure a stable environment for crystal pulling, a tantalum guide tube is used to guide the molten silicon into the chamber. To further ensure stable crystal pulling, a tantalum tube is used to guide the molten silicon onto the outside of the quartz glass ring. By selecting materials to control the contact area between silicon and silica in the melting chamber, the oxygen content inside the molten silicon is minimized. Because the volume of the molten silicon in the crystal pulling chamber is more stable than in traditional crystal pulling methods, better consistency in doping concentration is ensured between the head and tail of the silicon rod. This new crystal pulling method can produce silicon rods more suitable for N-type silicon. This new process can use both Siemens bulk silicon and granular silicon materials, offering a wide range of material choices to meet the low-oxygen, low-cost requirements of the photovoltaic market's N-type development trend. Attached Figure Description

[0016] Figure 1 This is a structural diagram of the present utility model; Figure 2 This is a partial structure of the present utility model. Figure 1 ; Figure 3 This is a partial structure of the present utility model. Figure 2 ; Figure 4 This is a partial structure of the present utility model. Figure 3 ; Figure 5This is a partial structure of the present utility model. Figure 4 .

[0017] In the diagram: 1. Pipeline; 2. Weighing chamber; 3. Argon-filled chamber; 4. Melting chamber; 5. Crystal pulling chamber; 6. Weight chuck; 7. Slide rail; 8. Second chamber; 9. First chamber; 101. Controller; 201. Automatic gate valve; 202. Silicon material; 203. First image observer; 204. Weight sensor; 301. Automatic gate valve; 302. Silicon material level sensor; 303. Second image observer; 304. Pressure gauge; 305. Second argon-filled valve; 401. Third image observer; 402. Second pressure gauge; 403. Argon-filled valve; 404. Crucible; 405. Second graphite heater; 406. 407. Refractory brick; 408. Temperature sensor; 409. Exhaust valve; 410. Tantalum guide tube; 411. Melt; 412. Partition; 413. Tantalum filter; 501. Fourth image observer; 502. Quartz glass spacer ring; 503. Circular crucible; 504. Graphite heater; 505. Crystal compartment refractory brick; 506. Argon gas replenishment pipe; 507. Third pressure gauge; 508. Seed crystal; 509. Crucible rotating support rod; 510. Exhaust pressure gauge; 511. Crystal compartment exhaust pipe; 512. Crystal rod; 601. First servo motor drive group; 602. Second servo motor drive group; 603. Robotic arm; 604. Turnover cart. Detailed Implementation

[0018] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0019] Example 1 Reference Figure 1-5 A continuous crystal pulling single crystal furnace includes a controller 101, a weighing chamber 2, and a crystal pulling chamber 5. A pipe 1 is installed on the controller 101, and the end of the pipe 1 is connected to the interior of the weighing chamber 2. An argon-filled gas chamber 3 is connected to the weighing chamber 2, and a melting chamber 4 is connected to the argon-filled gas chamber 3. The melting chamber 4 is located inside the crystal pulling chamber 5 and is connected to the crystal pulling chamber 5. A transfer and stacking mechanism is provided on the side of the crystal pulling chamber 5, and a quantitative automatic feeding mechanism is provided inside the weighing chamber 2. The quantitative automatic feeding mechanism includes a weight sensor 204 installed inside the weighing chamber 2. The weight sensor 204 is connected to the controller 101 via a digital signal. An automatic slide valve 201 is installed inside the weighing chamber 2. Silicon material 202 is installed inside the weighing chamber 2. A first image observer 203 is installed on the top of the weighing chamber 2. The argon-filled gas chamber 3 is equipped with an automatic valve 301, a silicon level sensor 302, a second image observer 303 at the end of the argon-filled gas chamber 3, a second argon-filled gas valve 305, and a pressure gauge 304.

[0020] A third image observer 401 is provided at the end of the melting chamber 4. An argon filling valve 403 is connected to the inside of the melting chamber 4. A second pressure gauge 402 is provided on the argon filling valve 403. A crucible 404 is provided inside the melting chamber 4. The crucible 404 can be square or round. The crucible 404 is made of any one of three materials: quartz glass, quartz glass with silicon nitride coating on the inner surface, and silicon nitride. A second graphite heater 405 is provided inside the melting chamber 4. Refractory bricks 406 are provided inside the melting chamber 4.

[0021] A temperature sensor 407 is installed inside the melting chamber 4, located below the crucible 404. An exhaust valve 408 is connected to the inside of the melting chamber 4.

[0022] In this embodiment, during use, the controller 101 will preset the feeding quantity. After the feeding quantity is set, the pipe 1, which extends into the raw material silicon material 202, will suck in the silicon material 202 under the control of the controller 101 and transport it to the weighing chamber 2 through the other end. The weight sensor 204 in the weighing chamber 2 will sense the weight of the silicon material 202 in real time and transmit the data to the controller 101. When the weight of the silicon material 202 reaches the value set by the controller 101, the controller 101 will automatically stop feeding, thereby realizing fully automatic quantitative feeding under normal pressure, avoiding material contamination that may be caused by manual handling, and ensuring the purity of the silicon material 202.

[0023] After receiving the quantitatively delivered silicon material 202, the weighing chamber 2 can observe the status of the silicon material 202 inside the chamber through the first image observer 203. When the weight sensor 204 detects that the weight of the silicon material 202 has reached the set value, the feeding stops. Under the control of the controller 101, the automatic gate valve 201 will remain closed and wait for instructions. When it receives the opening signal from the controller 101, the automatic gate valve 201 opens, and the silicon material 202 falls into the argon-filled chamber 3. As the silicon material 202 flows out, when the weight sensor 204 detects that the weight of the silicon material in the weighing chamber 2 has reached the minimum value, the automatic gate valve 201 closes under the control of the controller 101. At this time, the pipeline 1 will reopen to feed the material. This cycle repeats to achieve precise control of the delivery of the silicon material 202.

[0024] Example 2 Reference Figure 1-5 The melting chamber 4 is equipped with a flow guide tantalum tube 409, the crucible 404 is equipped with melt 410, the melting chamber 4 is equipped with a partition 411, and a tantalum filter screen 412 is provided between the bottom of the melting chamber 4 and the flow guide tantalum tube 409.

[0025] The top of the crystal pulling chamber 5 is equipped with a fourth image observer 501. Inside the crystal pulling chamber 5 is a circular crucible 503, which is made of either quartz glass or quartz glass with silicon nitride coating on the inner surface. Inside the crystal pulling chamber 5 is a quartz glass spacer ring 502 and a graphite heater 504.

[0026] The interior of the crystal pulling chamber 5 is equipped with crystal chamber refractory bricks 505, and the interior of the crystal pulling chamber 5 is connected to an argon gas supply pipe 506, on which a third pressure gauge 507 is installed.

[0027] The crystal pulling chamber 5 is internally connected to a crystal chamber exhaust pipe 511, and an exhaust pressure gauge 510 is installed on the crystal chamber exhaust pipe 511. The crystal pulling chamber 5 is internally equipped with a crucible rotating support rod 509 and a seed crystal 508, and a crystal rod 512.

[0028] The transfer and stacking mechanism includes a slide rail 7, a first compartment 9, a second compartment 8, and a turnover cart 604. The slide rail 7 is equipped with a first servo motor drive group 601 and a second servo motor drive group 602. The turnover cart 604 is equipped with a robotic arm 603. The first compartment 9 and the second compartment 8 are equipped with a counterweight chuck 6.

[0029] In this embodiment, when the silicon material 202 in the weighing chamber 2 falls into the argon-filled chamber 3, the silicon material level sensor 302 will sense the height of the silicon material 202 in the argon-filled chamber 3 in real time and transmit the data to the controller 101. Then, the operator can observe the situation inside the argon-filled chamber 3 through the second image observer 303. Since one end of the second argon filling valve 305 is connected to the argon tank and the other end is connected to the argon-filled chamber 3, after the automatic gate valve 201 and the gate automatic valve 301 are closed at the same time, argon can be filled into the argon-filled chamber 3 through the second argon filling valve 305. During argon filling, the pressure gauge 304 will detect the pressure inside the chamber. When the pressure value is greater than or equal to the preset value, the argon filling will be closed. Argon gas is supplied to the argon-filled gas chamber 3 to protect the silicon material 202 from oxidation. After the silicon material 202 has been processed in the argon-filled gas chamber 3, the automatic insertion valve 301 can be opened. When the automatic insertion valve 301 is opened, the silicon material 202 will fall into the melting chamber 4. At this time, the silicon material level sensor 302 will detect the loss of silicon material 202 in the argon-filled gas chamber 3. When the minimum value is reached, the automatic insertion valve 301 closes and the automatic insertion valve 201 opens, and the new silicon material 202 in the weighing chamber 2 will flow back into the argon-filled gas chamber 3. Then the automatic insertion valve 201 closes and the above process is repeated. Argon gas is turned on and the material is fed in a cycle to provide a stable supply of silicon material 202 for continuous crystal pulling.

[0030] When the melting chamber 4 is working, the second graphite heater 405 is first turned on to heat the crucible 404. At the same time, the argon filling valve 403 is turned on to fill the melting chamber 4 with argon gas to protect the melt 410 and silicon material 202 from oxidation. The exhaust valve 408 discharges the gas in the chamber. When the temperature of the crucible 404 reaches the set value, the automatic valve 301 is opened and the silicon material 202 in the argon filling chamber 3 will fall freely into the crucible 404. The silicon material 202 will gradually melt in the crucible 404 to form the melt 410. The operator can monitor the melting progress inside the crucible 404 in real time through the third image observer 401. Temperature sensor 407 senses the temperature of melt 410 and transmits the data to controller 101. Baffle 411 is used to isolate silicon material 202 floating in crucible 404. Second pressure gauge 402 monitors the pressure inside the chamber. When the pressure value is greater than or equal to the set value, argon filling valve 403 will close and issue an alarm, waiting for manual handling. When the liquid level of melt 410 is higher than the flow guide tantalum tube 409, melt 410 will fall freely into crystal pulling chamber 5 through flow guide tantalum tube 409, thereby achieving continuous melting and feeding.

[0031] Before starting crystal pulling, turn on the relevant equipment in the crystal pulling chamber 5, start the controller 101 to initialize the various components of the crystal pulling chamber 5, set the target temperature of the melt 410, the upper and lower limits of the liquid level, the vertical movement parameters of the seed crystal 508 such as lifting speed and rotation speed, and the target value of the crystal diameter, check the argon gas reserve in the argon tank, ensure that the argon gas replenishment pipe 506 can supply argon gas normally, and check whether the connections of each device are normal.

[0032] After preparation, the melt 410 in the melting chamber 4 flows into the crystal pulling chamber 5 through the guide tantalum pipe 409. The graphite heater 504 is then activated to provide a stable temperature for the melt 410. The refractory bricks 505 in the crystal pulling chamber 5 provide insulation, reducing heat loss and maintaining a stable thermal environment. The argon gas supply pipe 506 connects to an argon gas tank, filling the crystal pulling chamber 5 with argon gas to protect the newly flowing melt 410, the already formed silicon atom-arranged crystalline melt, and the crystal rod 512 from oxidation. When the liquid level and temperature of the silicon atom-arranged crystalline melt reach the set range... The controller 101 controls the seed crystal 508 to fall, immersing it in the silicon atom-arranged crystalline melt. At this time, the fourth image observer 501 monitors the crystallization process inside the silicon atom-arranged crystalline melt in real time, sensing the liquid level and temperature, and automatically tracking and calculating the crystal diameter, feeding the data back to the controller 101. Finally, under the control of the controller 101, the seed crystal 508 begins to slowly rotate and rise. The silicon atoms in the silicon atom-arranged crystalline melt follow the silicon atom arrangement structure of the seed crystal 508, forming regular crystals at the solid-liquid interface, gradually growing into a crystal. As the seed crystal 508 continues to rise and rotate, the crystal... During the continuous growth of the crystal, the quartz glass spacer ring 502 isolates the newly entering melt 410 from the already formed silicon atom-arranged crystalline melt. This isolation helps maintain a stable thermal and flow field environment, ensuring the stability of crystal growth. Under the control of the controller 101, the crucible rotating support rod 509 drives the circular crucible 503 to rotate, further optimizing the flow and temperature distribution of the melt 410 and promoting uniform crystal growth. During crystal growth, the fourth image observer 501 continuously monitors the crystallization status, liquid level, and temperature inside the silicon atom-arranged crystalline melt, and automatically tracks and calculates the crystal diameter. If the monitored parameters deviate from the specified parameters... If the liquid level deviates from the set range, such as changes in liquid level, temperature fluctuations, or abnormal crystal diameter, the controller 101 will adjust the relevant equipment in a timely manner based on the feedback data. For example, when the liquid level drops, the controller 101 can control the increase of the inflow of melt 410. When the temperature is too high or too low, the power of the graphite heater 504 will be adjusted. If the crystal diameter does not meet expectations, the lifting speed and rotation speed of the seed crystal 508 will be adjusted. When the formed crystal rod 512 reaches the set length, the controller 101 will control the seed crystal 508 to stop lifting and rotating, completing the final operation of this crystal pulling. Finally, the crystal rod 512 will be taken out from the crystal pulling chamber 5.

[0033] When the first chamber 9, under the control of the controller 101, moves along the slide rail 7 to directly above the crystal pulling chamber 5 via the drive of the first servo motor transmission group 601 or the second servo motor transmission group 602, it will begin to fall until its lower end is tightly engaged with the upper end of the crystal pulling chamber 5. At this time, the counterweight chuck 6, under the control of the controller 101, will clamp the seed crystal 508 and fall until the seed crystal 508 is immersed in the silicon atom-arranged crystalline melt in the crystal pulling chamber 5. Then, the crystal pulling operation begins. After the crystal pulling is completed, the counterweight chuck 6 rotates and lifts according to the preset program under the control of the controller 101, driving the seed crystal 508 to perform the crystal pulling operation, so that the silicon atoms in the silicon atom-arranged crystalline melt crystallize and grow on the seed crystal 508, gradually forming the crystal rod 512.

[0034] After the crystal pulling is completed, the hammer chuck 6 continues to rotate and lift the crystal rod 512 to the set height and then stops. Then, under the control of the controller 101, the first chamber 9 will rise and disengage from the crystal pulling chamber 5. Then the first chamber 9 moves to the left, while the second chamber 8 moves to the right. The two move to the end position of the slide rail 7 respectively. At this time, the second chamber 8, which moves to the right, repeats the crystal pulling preparation and implementation steps of the first chamber 9, that is, it falls and engages with the crystal pulling chamber 5, and the hammer chuck 6 clamps the crystal seed 508 to perform crystal pulling and crystal attraction operations.

[0035] After the first chamber 9 moves to the left and reaches its destination, the weighted chuck 6 inside it will fall to the set position, allowing the crystal rod 512 to cool naturally at that position. When the weighted chuck 6 falls to the set position, the controller 101 issues a command to start the robot arm 603. The robot arm 603 grabs the cooled crystal rod 512 according to the preset program and places it on the transfer cart 604, completing one crystal rod 512 transfer and stacking operation. After completing one crystal rod 512 transfer and stacking operation, the system continues to repeat the above steps. The first chamber 9 and the second chamber 8 move alternately through the slide rail 7 to perform crystal pulling, crystal rod 512 cooling and transfer and stacking operations in sequence, realizing uninterrupted crystal pulling and grabbing and stacking cycle work.

[0036] It should be noted that either Siemens block silicon or granular silicon can be used for silicon material 202.

[0037] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A continuous crystal pulling single crystal furnace, comprising a controller (101), a weighing chamber (2), and a crystal pulling chamber (5), wherein the controller (101) is equipped with a pipe (1), characterized in that, The end of the pipe (1) is connected to the interior of the weighing chamber (2). An argon gas chamber (3) is connected to the weighing chamber (2). A melting chamber (4) is connected to the argon gas chamber (3). The melting chamber (4) is located inside the crystal pulling chamber (5). The melting chamber (4) and the crystal pulling chamber (5) are connected to each other. A transfer and stacking mechanism is provided on the side of the crystal pulling chamber (5). A quantitative automatic feeding mechanism is provided inside the weighing chamber (2). The quantitative automatic feeding mechanism includes a weight sensor (204) installed inside the weighing chamber (2). The weight sensor (204) is connected to the controller (101) via digital signals. An automatic slide valve (201) is installed inside the weighing chamber (2). Silicon material (202) is installed inside the weighing chamber (2). A first image observer (203) is installed on the top of the weighing chamber (2). The argon-filled gas chamber (3) is equipped with an automatic valve (301) and a silicon level sensor (302). The end of the argon-filled gas chamber (3) is equipped with a second image observer (303). The interior of the argon-filled gas chamber (3) is connected to a second argon-filling valve (305), and a pressure gauge (304) is connected to the second argon-filling valve (305).

2. The continuous crystal pulling single crystal furnace according to claim 1, characterized in that: A third image observer (401) is provided at the end of the melting chamber (4). An argon filling valve (403) is provided inside the melting chamber (4). A second pressure gauge (402) is provided on the argon filling valve (403). A crucible (404) is provided inside the melting chamber (4). The crucible (404) can be square or round. The crucible (404) is made of any one of three materials: quartz glass, quartz glass with silicon nitride coating on the inner surface, and silicon nitride. A second graphite heater (405) is provided inside the melting chamber (4). Refractory bricks (406) are provided inside the melting chamber (4).

3. A continuous crystal pulling single crystal furnace according to claim 1, characterized in that: A temperature sensor (407) is installed inside the melting chamber (4), and the temperature sensor (407) is located below the crucible (404). An exhaust valve (408) is connected inside the melting chamber (4).

4. A continuous crystal pulling single crystal furnace according to claim 3, characterized in that: The melting chamber (4) is provided with a flow guide tantalum tube (409), the crucible (404) is provided with melt (410), the melting chamber (4) is provided with a partition (411), and a tantalum filter screen (412) is provided between the bottom of the melting chamber (4) and the flow guide tantalum tube (409).

5. A continuous crystal pulling single crystal furnace according to claim 1, characterized in that: The top of the crystal pulling chamber (5) is provided with a fourth image observer (501), and the inside of the crystal pulling chamber (5) is provided with a circular crucible (503). The circular crucible (503) is made of either quartz glass or quartz glass with silicon nitride coating on the inner surface. The inside of the crystal pulling chamber (5) is provided with a quartz glass spacer ring (502) and a graphite heater (504).

6. A continuous crystal pulling single crystal furnace according to claim 1, characterized in that: The interior of the crystal pulling chamber (5) is provided with crystal chamber refractory bricks (505), and the interior of the crystal pulling chamber (5) is connected to an argon gas supply pipe (506), and a third pressure gauge (507) is provided on the argon gas supply pipe (506).

7. A continuous crystal pulling single crystal furnace according to claim 1, characterized in that: The crystal pulling chamber (5) is internally connected to a crystal chamber exhaust pipe (511), and an exhaust pressure gauge (510) is installed on the crystal chamber exhaust pipe (511). The crystal pulling chamber (5) is internally equipped with a crucible rotating support rod (509) and a seed crystal (508), and a crystal rod (512) is internally equipped.

8. A continuous crystal pulling single crystal furnace according to claim 1, characterized in that: The transfer and stacking mechanism includes a slide rail (7), a first compartment (9), a second compartment (8), and a turnover cart (604). The slide rail (7) is equipped with a first servo motor drive group (601) and a second servo motor drive group (602). The turnover cart (604) is equipped with a robot arm (603). The first compartment (9) and the second compartment (8) are equipped with a weight clamp (6).

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