Silicon wafer cleaning machine

Abstract

The utility model discloses an embodiment relates to the technical field of semiconductor equipment, and discloses a silicon wafer cleaning machine. It includes: device ontology, forms the accommodation space inside, and the top opening of accommodation space is provided with the cover of openable and closeable, the cleaning cavity is the cuboid shape, and is accomodated and fixed in the accommodation space. The tray is arranged in the cleaning cavity and is used for bearing the silicon wafer to be cleaned, the hydrofluoric acid containing cavity is the cuboid shape, and is accomodated and fixed in the accommodation space, and is located below the cleaning cavity, the connecting pipeline is arranged in the device ontology, and connects the cleaning cavity and the hydrofluoric acid containing cavity, wherein, the connecting pipeline forms multiple connecting interfaces on the outer surface of device ontology, and the connecting interface includes: nitrogen gas interface, air draft discharge interface, hydrofluoric acid input interface and waste liquid discharge interface.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment technology, and in particular to a silicon wafer cleaning machine. Background Technology

[0002] With the rapid development of the semiconductor industry and the continuous shrinking of integrated circuit feature sizes, the impact of contaminants on silicon wafer surface on device performance is becoming increasingly significant.

[0003] For example, in advanced process nodes (such as 7nm, 5nm and below), even nanoscale particles, trace metal ions (such as Fe, Cu, Na, etc.) and organic residues can lead to deterioration of device electrical performance, reduced yield or reliability issues.

[0004] Surface contaminants on silicon wafers mainly originate from process chemicals, environmental particles, equipment wear, and residues from previous processes. For example, metal ion contamination can form deep-level defects in silicon, affecting carrier lifetime; particulate contamination can cause pattern defects or short circuits; and organic contaminants can affect the adhesion and interface properties of subsequent thin films.

[0005] Moreover, silicon wafer cleaning needs are required throughout the entire wafer manufacturing process, involving several key steps such as pre-lithography cleaning, post-lithography resist removal, post-etching residue removal, post-chemical mechanical planarization (CMP) cleaning, and surface pretreatment before thin film deposition.

[0006] Therefore, there is an urgent need to provide an efficient and reliable silicon wafer cleaning technology. Utility Model Content

[0007] The present invention provides a silicon wafer cleaning machine, which aims to solve the defects of existing silicon wafer cleaning technology.

[0008] In a first aspect, this utility model provides a silicon wafer cleaning machine. The silicon wafer cleaning machine includes: a device body, the device body having an internal receiving space, the top opening of which is provided with an openable and closable cover; a cleaning chamber, the cleaning chamber being cuboid in shape and fixedly housed within the receiving space, the cleaning chamber containing a tray for holding the silicon wafer to be cleaned; a hydrofluoric acid receiving chamber, the hydrofluoric acid receiving chamber being cuboid in shape and fixedly housed within the receiving space, located below the cleaning chamber; and a connecting pipe, the connecting pipe being disposed within the device body and connecting the cleaning chamber and the hydrofluoric acid receiving chamber; wherein the connecting pipe forms multiple connecting interfaces on the outer surface of the device body; the connecting interfaces include: a nitrogen interface, a ventilation exhaust interface, a hydrofluoric acid input interface, and a waste liquid discharge interface.

[0009] Optionally, the hydrofluoric acid input port is connected to the hydrofluoric acid containing cavity via a connecting pipe for injecting hydrofluoric acid into the hydrofluoric acid containing cavity, and the waste liquid discharge port is connected to the hydrofluoric acid containing cavity via a connecting pipe for discharging waste liquid from the hydrofluoric acid containing cavity.

[0010] Optionally, the connecting pipeline further includes: a first manual valve and a second manual valve; wherein the first manual valve is disposed between the hydrofluoric acid containing chamber and the hydrofluoric acid input port; and the second manual valve is disposed between the hydrofluoric acid containing chamber and the waste liquid discharge port.

[0011] Optionally, the connecting pipeline includes: a first gas passage, a second gas passage, and a third gas passage; wherein, the first gas passage is controlled by a first solenoid valve, equipped with a first flow meter for measuring the gas flow rate, and enters a first connecting circuit through a first manual valve; the second gas passage is controlled by a second solenoid valve, equipped with a second flow meter for measuring the gas flow rate, and enters the first connecting circuit through a second manual valve; the first connecting circuit is connected to one end of the first connecting pipe through a fourth manual valve, and to one end of the second connecting pipe through a fifth manual valve; the other end of the first connecting pipe is connected to a through hole on one side of the cleaning chamber, and the other end of the second connecting pipe is connected to a through hole on the other side of the cleaning chamber; the third gas passage is controlled by a third solenoid valve, equipped with a third flow meter for measuring the gas flow rate, and enters the second connecting circuit through a third manual valve; the second connecting circuit is connected to the hydrofluoric acid containing chamber; the hydrofluoric acid containing chamber has two steam outlets, one of which is connected to the first connecting pipe through a third connecting pipe, and the other steam outlet is connected to the second connecting pipe through a fourth connecting pipe.

[0012] Optionally, the connecting pipeline further includes: a ventilation duct, which is connected to the hydrofluoric acid containment cavity via a pressure relief valve, and the exhaust port is connected to the ventilation duct.

[0013] The beneficial effects of the silicon wafer cleaning machine provided in this embodiment of the invention are as follows: By integrating the cleaning chamber and the hydrofluoric acid containing chamber into a unified device body, the silicon wafer cleaning machine achieves a compact design and safe operation. The hydrofluoric acid containing chamber is located below the cleaning chamber and is combined with a nitrogen carrier gas system, enabling controllable delivery of hydrofluoric acid vapor and gas-phase cleaning, ensuring both cleaning effect and safety of use. Attached Figure Description

[0014] One or more embodiments are illustrated by way of example with reference to the accompanying drawings. These illustrations do not constitute a limitation on the embodiments. Elements having the same reference numerals in the drawings are denoted as similar elements. Unless otherwise stated, the figures in the drawings are not to be limited by scale.

[0015] Figure 1 This is a schematic diagram of a silicon wafer cleaning machine according to an embodiment of the present invention;

[0016] Figure 2 This is a rear view of the silicon wafer cleaning machine according to an embodiment of the present utility model;

[0017] Figure 3 This is a schematic diagram of the silicon wafer cleaning machine removing part of the housing according to an embodiment of the present invention;

[0018] Figure 4 This is a top view of the tray according to an embodiment of the present utility model;

[0019] Figure 5 This is a schematic diagram of part of the connecting pipes of the silicon wafer cleaning machine according to an embodiment of the present utility model;

[0020] Figure 6 yes Figure 5 A top view of part of the connecting pipes shown;

[0021] Figure 7 This is a schematic diagram of the first nitrogen pipeline according to an embodiment of the present invention;

[0022] Figure 8 This is a schematic diagram of the second nitrogen pipeline according to an embodiment of the present invention. Detailed Implementation

[0023] The present invention will now be described in detail with reference to specific embodiments. It should be emphasized that the following description is merely exemplary and is not intended to limit the scope and application of the present invention.

[0024] It should be noted that, unless otherwise expressly specified and limited, the terms "center," "longitudinal," "lateral," "upper," "lower," "vertical," "horizontal," "inner," and "outer," etc., used in this specification to indicate the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this utility model. The terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features; thus, features defined with "first" or "second" may explicitly or implicitly include one or more of that feature; "multiple" means two or more; and "and / or" includes any and all combinations of one or more related listed items. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0025] This invention provides a silicon wafer cleaning machine. The machine cleans the surface of the silicon wafer by blowing nitrogen gas and nitrogen gas carrying hydrofluoric acid onto the wafer surface.

[0026] like Figures 1 to 3 As shown, the silicon wafer cleaning machine includes: a device body 10, a cleaning chamber 20, a hydrofluoric acid containing chamber 30, and a connecting pipeline 40.

[0027] The main body 10 is the core structure of the entire silicon wafer cleaning machine. It forms a receiving space inside. An openable cover 11 is provided at the top opening of the receiving space, which allows the silicon wafers in the cleaning chamber 20 to be removed or placed in by opening and closing the cover.

[0028] In some embodiments, the device body 10 is also provided with a control panel for controlling the cleaning process. The specific settings of the control panel can be determined according to the actual situation. For example, it can be provided with corresponding electrical control buttons 12, a negative pressure gauge 13 that displays the current negative pressure inside the containment space, and a touch screen 14 with touch control function, etc.

[0029] The cleaning chamber 20 is rectangular in shape and is housed and fixed within a receiving space. It can be made of a corrosion-resistant material and serves as the working chamber for purging and cleaning silicon wafers. A tray 21 is provided inside the cleaning chamber 20. The tray 21 is a device for holding the silicon wafers. Its specific configuration can be determined according to actual needs and is not specifically limited here.

[0030] The hydrofluoric acid receiving cavity 30 is also rectangular in shape and is used to contain liquid hydrofluoric acid. It is housed and fixed within the receiving space and is located below the cleaning cavity 20.

[0031] Specifically, such as Figure 5 As shown, the hydrofluoric acid container 30 is also equipped with a level gauge 31 that displays the current liquid level, so that the current amount of hydrofluoric acid remaining can be observed during use.

[0032] The connecting pipe 40 is a component located inside the main body of the device. It is connected to the cleaning chamber 20 and the hydrofluoric acid containing chamber 30, forming the required gas transmission channel. This allows nitrogen gas to be moved and delivered to different positions in a predetermined manner, thereby completing the purging and cleaning operation of the silicon wafer.

[0033] Specifically, the outer surface of the device body has multiple connection interfaces. These connection interfaces are connected to the internal connection pipes 40 to enable the input and output of liquid / gas from the device.

[0034] like Figure 2 As shown, the connection interfaces include: nitrogen port 51, exhaust port 52, hydrofluoric acid input port 53, and waste liquid discharge port 54.

[0035] In some embodiments, the hydrofluoric acid inlet 53 is connected to the hydrofluoric acid reservoir 30 via a connecting pipe and serves as an inlet for injecting hydrofluoric acid into the reservoir. The waste liquid outlet 54 is connected to the hydrofluoric acid reservoir via a connecting pipe and serves as an outlet for discharging waste liquid from the hydrofluoric acid reservoir.

[0036] Specifically, such as Figure 6 As shown, the connecting pipeline also includes: a first manual valve 61 and a second manual valve 62.

[0037] The first manual valve 61 is located between the hydrofluoric acid containing chamber 30 and the hydrofluoric acid input port 53, and the second manual valve 62 is located between the hydrofluoric acid containing chamber 30 and the waste liquid discharge port 54.

[0038] Therefore, users can manually control the opening of the first manual valve 61 and the second manual valve 62 to respectively achieve the replenishment of hydrofluoric acid and the discharge of waste liquid, and after the operation is completed, manually control the opening of the first manual valve 61 and the second manual valve 62 to close them to ensure that no accidental leakage occurs.

[0039] In some embodiments, such as Figure 7 and Figure 8 As shown, the connection pipeline includes a first nitrogen pipeline 71 and a second nitrogen pipeline 72 that are both connected to the nitrogen port 51.

[0040] Specifically, the first nitrogen line 71 is equipped with a first regulator 71a, used to adjust the high-pressure gas input from the nitrogen inlet to a low-pressure range of 5 to 10 psi. Then, it enters the main line via a manual regulating valve ZV1. The other end of the main line is connected to a splitter 71b, which divides the gas into several branches 71c (five are shown in the diagram). Each branch extends on one side to the nozzle 71d (located in a different position) and on the other side to connect to the tray 21.

[0041] The low-pressure nitrogen supplied by the first nitrogen pipeline 71 enables the creation of a protective atmosphere for the equipment cavity and serves as a means of purging and cleaning the pipeline during system maintenance.

[0042] Specifically, the second nitrogen line 72 contains three relatively independent gas passages, which are used for three different functions: nitrogen purging, hydrofluoric acid dilution, and hydrofluoric acid purging.

[0043] The second nitrogen line 72 is equipped with a second regulator 72a, which is used to adjust the high-pressure gas input from the nitrogen interface to a medium pressure range of 40-60 psi, and then enter the first gas passage, the second gas passage and the third gas passage respectively.

[0044] The first gas passage is controlled by the first solenoid valve SOL1. Nitrogen gas entering the first gas passage first passes through the first flow meter FM1 to measure the gas flow rate. Then it passes through the first manual valve CV01 and enters the first connection circuit 721.

[0045] The second gas passage is controlled by the second solenoid valve SOL2. Nitrogen entering the second gas passage first passes through the second flow meter FM2 to measure the gas flow rate. Then, it passes through the second manual valve CV02 and also enters the first connection circuit 721.

[0046] The first connection circuit 721 is connected to one end of the first connection pipe 731 via the fourth manual valve CV04, and is connected to one end of the second connection pipe 732 via the fifth manual valve CV05.

[0047] The other end of the first connecting pipe 731 is connected to a through hole on one side of the cleaning chamber. The other end of the second connecting pipe 732 is connected to a through hole on the other side of the cleaning chamber. Both the first connecting pipe 731 and the second connecting pipe 732 are made of corrosion-resistant PVDF material to ensure compatibility with hydrofluoric acid.

[0048] The third gas passage is controlled by the third solenoid valve SOL3. Nitrogen entering the third gas passage first passes through the third flow meter FM3 to measure the gas flow rate. Then, the nitrogen pressure is reduced to a low pressure range of 5 to 10 psi by the third regulator 72b, and then enters the second connection circuit 722 through the third manual valve CV03.

[0049] The second connection circuit 722 is connected to the hydrofluoric acid containment chamber 30 to allow nitrogen gas to enter the hydrofluoric acid containment chamber 30 to increase the gas pressure therein.

[0050] The hydrofluoric acid containing chamber 30 has two steam outlets. One steam outlet is connected to one end of the first connecting pipe 731 via a third connecting pipe 733. A first automatic valve AV01 for controlling the opening / closing of the pipe is installed on the third connecting pipe 733. The other steam outlet is connected to one end of the second connecting pipe 732 via a fourth connecting pipe 734. A second automatic valve AV02 for controlling the opening / closing of the pipe is installed on the fourth connecting pipe 734.

[0051] In some embodiments, the connecting pipeline may also be provided with a pressure sensor 76 for detecting the internal pressure of the hydrofluoric acid containment cavity 30.

[0052] In actual use, the first solenoid valve SOL1 is opened, and the second solenoid valve SOL2 and the third solenoid valve SOL3 are closed. Nitrogen gas enters the first connection circuit 721 through the first manual valve CV01, and then enters the cleaning chamber through the through holes on both sides of the cleaning chamber via the first connection pipe 731 and the second connection pipe 732, blowing the silicon wafers carried by the tray 21.

[0053] After nitrogen purging is completed, the third solenoid valve SOL3 opens and the first solenoid valve SOL1 closes. Nitrogen gas enters the second connection circuit 722 through the third manual valve CV03, and then enters the hydrofluoric acid containing chamber 30, increasing the internal pressure.

[0054] As a result, hydrofluoric acid vapor is generated within the hydrofluoric acid containing chamber 30. The nitrogen gas inside carries the hydrofluoric acid through two vapor outlets, entering the third connecting pipe 733 and the fourth connecting pipe 734.

[0055] Then, the silicon wafers carried on the cleaning tray 21 are blown away through the through holes on both sides of the cleaning chamber via the first connecting pipe 731 and the second connecting pipe 732 to remove the oxide film on the surface of the silicon wafers.

[0056] When it is necessary to dilute the hydrofluoric acid vapor (i.e., the nitrogen gas carrying hydrofluoric acid) output from the steam outlet, the second solenoid valve SOL2 is opened. Nitrogen gas enters the first connection circuit 721 through the second manual valve CV02, and then enters the first connection pipe 731 and the second connection pipe 732 to dilute the hydrofluoric acid vapor entering the first connection pipe 731 and the second connection pipe 732 to a suitable concentration.

[0057] Finally, after the nitrogen carrying hydrofluoric acid has been purged, the first solenoid valve SOL1 is reopened, and the second solenoid valve SOL2 and the third solenoid valve SOL3 are closed. At this time, nitrogen enters the first connection circuit 721 through the first manual valve CV01, and then enters the cleaning chamber through the through holes on both sides of the cleaning chamber via the first connecting pipe 731 and the second connecting pipe 732, purging the silicon wafers carried by the tray 21, removing the liquid on their surface and drying the silicon wafers.

[0058] In some embodiments, please continue reading Figure 8 The connecting pipeline also includes: ventilation duct 74.

[0059] The ventilation duct 74 is used to exhaust air from the containment space to create negative pressure and prevent leakage. The exhaust port is connected to the ventilation duct, and the extracted internal air is discharged through the exhaust port.

[0060] Furthermore, the ventilation duct 74 is also connected to the hydrofluoric acid containing chamber 30 via a pressure relief valve 75 to achieve the function of pressure relief protection. Thus, when the internal pressure of the hydrofluoric acid containing chamber 30 is too high, the pressure relief valve 75 opens, allowing the gas inside the hydrofluoric acid containing chamber 30 to be discharged through the ventilation duct 74.

[0061] Specifically, the pressure relief valve 75, the first automatic valve AV01, and the second automatic valve AV02 can all be pneumatic valves, driven by compressed air at a specific pressure.

[0062] The above description, in conjunction with specific / preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. Those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and all of these fall within the protection scope of the present invention.

Claims

1. A silicon wafer cleaning machine, characterized in that, include: The device body has an internal receiving space, and the top opening of the receiving space is provided with an openable and closable cover. A cleaning chamber, which is rectangular in shape, is housed and fixed within the receiving space. A tray is provided inside the cleaning chamber for holding the silicon wafer to be cleaned. A hydrofluoric acid receiving cavity, which is rectangular in shape, is housed and fixed within the receiving space and is located below the cleaning cavity; A connecting pipe is disposed within the device body, connecting the cleaning chamber and the hydrofluoric acid containing chamber; The connecting pipeline forms multiple connection interfaces on the outer surface of the device body; the connection interfaces include: a nitrogen interface, a ventilation exhaust interface, a hydrofluoric acid input interface, and a waste liquid discharge interface.

2. The silicon wafer cleaning machine according to claim 1, characterized in that, The hydrofluoric acid input port is connected to the hydrofluoric acid containing cavity via a connecting pipe for injecting hydrofluoric acid into the containing cavity, and the waste liquid discharge port is connected to the hydrofluoric acid containing cavity via a connecting pipe for discharging waste liquid from the containing cavity.

3. The silicon wafer cleaning machine according to claim 2, characterized in that, The connecting pipeline also includes: a first manual valve and a second manual valve; The first manual valve is located between the hydrofluoric acid containing chamber and the hydrofluoric acid input port; the second manual valve is located between the hydrofluoric acid containing chamber and the waste liquid discharge port.

4. The silicon wafer cleaning machine according to claim 1, characterized in that, The connecting pipeline includes: a first gas passage, a second gas passage, and a third gas passage; The first gas passage is controlled by a first solenoid valve, and a first flow meter is provided to measure the flow rate of the gas passing through it. The gas then enters the first connection circuit through a first manual valve. The second gas passage is controlled by a second solenoid valve, and a second flow meter is provided to measure the flow rate of the gas passing through it. The gas then enters the first connection circuit through a second manual valve. The first connection circuit is connected to one end of the first connection pipe via a fourth manual valve, and to one end of the second connection pipe via a fifth manual valve; The other end of the first connecting pipe is connected to a through hole on one side of the cleaning chamber, and the other end of the second connecting pipe is connected to a through hole on the other side of the cleaning chamber; The third gas passage is controlled by a third solenoid valve, and a third flow meter is provided to measure the flow rate of the gas passing through it. The gas then enters the second connection circuit through a third manual valve. The second connection circuit is connected to the hydrofluoric acid containment chamber; the hydrofluoric acid containment chamber is provided with two steam outlets, one of which is connected to the first connection pipe through a third connection pipe, and the other steam outlet is connected to the second connection pipe through a fourth connection pipe.

5. The silicon wafer cleaning machine according to claim 1, characterized in that, The connecting pipeline also includes: a ventilation duct, which is connected to the hydrofluoric acid containment cavity via a pressure relief valve, and the exhaust port is connected to the ventilation duct.

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