A top tooth structure and quartz boat loading and unloading mechanism

Abstract

This application discloses a top tooth structure and a quartz boat loading and unloading mechanism, including a top tooth base with a first surface; multiple sets of positioning teeth arranged along the length of the top tooth base on the first surface, each set of positioning teeth including a first positioning tooth and a second positioning tooth, with two silicon wafers facing away from each other placed between the first and second positioning teeth, the tip of the first positioning tooth being further away from the first surface than the tip of the second positioning tooth; the first positioning tooth having a first sidewall facing the second positioning tooth, and the second positioning tooth having a second sidewall facing the first positioning tooth, the first sidewall being provided with a conductive coating to eliminate static electricity on the silicon wafer when it is close to the first sidewall and in contact with the first sidewall. This effectively avoids the silicon wafer opening phenomenon caused by electrostatic repulsion, reduces the risk of silicon wafers colliding and breaking with the top of the top tooth, reduces raw material loss, significantly improves the accuracy and stability of wafer loading, and reduces production costs.

Description

Technical Field

[0001] This application relates to the field of solar cell technology, and in particular to a top tooth structure and a quartz boat loading and unloading mechanism. Background Technology

[0002] In the photovoltaic cell manufacturing field, TOPCON (Tunnel Oxide Passivated Contact) cells have become the mainstream technology due to their excellent photoelectric conversion efficiency. In the TOPCON cell production process, diffusion and annealing are core processes for forming the critical electrical structure, and the stability and reliability of their automated wafer loading directly determine the cell production quality and efficiency. Although existing automated wafer loading equipment has achieved automatic feeding, transport, and loading of silicon wafers, significant technical bottlenecks still exist in practical applications due to the characteristics of silicon wafer materials and the process environment.

[0003] During wafer loading, due to the high surface resistivity of silicon wafers and the relatively dry process environment, static electricity is easily generated by friction or induction. Adjacent silicon wafers, after generating static electricity, repel each other due to like charges, resulting in an open gap and abnormal wafer spacing. Existing top-tooth loading mechanisms, based on a fixed-size design, struggle to adapt to the irregular shape of open silicon wafers, preventing precise embedding of the wafers into the top-tooth positioning slots. During loading, frequent rigid collisions occur between the silicon wafers and the top of the top teeth. According to production data, this results in a wafer breakage defect rate as high as 3%-5%, increasing raw material waste costs and reducing equipment uptime due to downtime for replacing broken pieces, severely hindering production efficiency improvements. Utility Model Content

[0004] This application discloses a top tooth structure and a quartz boat loading and unloading mechanism, which can effectively avoid the silicon wafer opening phenomenon caused by electrostatic repulsion, reduce the risk of silicon wafer shattering due to collision with the top of the top tooth, reduce raw material loss, and significantly improve the accuracy and stability of wafer loading, thereby reducing production costs.

[0005] To achieve the above objectives, this application discloses a top tooth structure for lifting the silicon wafer from below, comprising:

[0006] A toothed base having a first surface;

[0007] Multiple sets of positioning teeth are arranged on the first surface along the length direction of the top tooth base. Each set of positioning teeth includes a first positioning tooth and a second positioning tooth. The first positioning tooth and the second positioning tooth are used to place two silicon wafers arranged opposite to each other. The tip of the first positioning tooth is further away from the first surface than the tip of the second positioning tooth.

[0008] The first positioning tooth has a first sidewall facing the second positioning tooth, and the second positioning tooth has a second sidewall facing the first positioning tooth. A conductive coating is provided on the first sidewall so that when the silicon wafer near the first sidewall is attached to the first sidewall, static electricity on the silicon wafer can be eliminated.

[0009] In one possible implementation, a conductive coating is provided on the second sidewall to eliminate static electricity on the silicon wafer when it is attached to the second sidewall.

[0010] In one possible implementation, the tip of the first positioning tooth has a first wedge-shaped surface, the side of the first wedge-shaped surface closer to the second positioning tooth being closer to the first surface than the side farther from the second positioning tooth, and the tip of the second positioning tooth has a second wedge-shaped surface, the side of the second wedge-shaped surface closer to the first positioning tooth being closer to the first surface than the side farther from the first positioning tooth.

[0011] In one possible implementation, a removable guide groove is provided between the bottom end of the first positioning tooth and the bottom end of the second positioning tooth, the guide groove being configured to guide the movement direction of the silicon wafers located within the guide groove so that the two silicon wafers located within the guide groove fit together.

[0012] In one possible implementation, the guide groove includes a first groove wall and a second groove wall disposed opposite to each other, the distance between the first groove wall and the second groove wall gradually increasing from the bottom of the guide groove to the opening of the guide groove, and the sides of the first groove wall and the second groove wall facing the bottom of the guide groove being connected to each other.

[0013] In one possible implementation, the guide groove includes a third groove wall and a fourth and a fifth groove wall disposed opposite to each other. The third groove wall forms the bottom wall of the guide groove. The bottom ends of the fourth and fifth groove walls are respectively connected to the two ends of the third groove wall. The distance between the fourth and fifth groove walls gradually increases from the bottom of the guide groove to the opening of the guide groove.

[0014] In one possible implementation, the distance between the bottom end of the fourth trench wall and the bottom end of the fifth trench wall is less than or equal to the sum of the thicknesses of the two silicon wafers.

[0015] In one possible implementation, the walls of the guide grooves are coated with a conductive coating.

[0016] In one possible implementation, the surface of the top tooth base is adhered with conductive tape.

[0017] This application also discloses a quartz boat loading and unloading mechanism, including a frame, a guide rail, an air knife, a quartz boat, and a top tooth structure. The guide rail is disposed on the frame, the top tooth structure is slidably disposed on the guide rail, the quartz boat is disposed above the top tooth structure, the air knife is disposed above the quartz boat, and the top tooth structure and the quartz boat are adjustable in the vertical direction so that the top tooth structure can push the silicon wafer on the quartz boat onto the top tooth structure. The top tooth structure is as described in any of the above claims.

[0018] Compared with the prior art, the beneficial effects of this application are as follows:

[0019] In the top tooth structure and quartz boat loading and unloading mechanism provided in this application, the top tooth base serves as the basic component of the entire structure, providing a stable support platform for the positioning teeth and silicon wafers. Its flat first surface serves as the reference for the installation of the positioning teeth, ensuring the installation position accuracy of multiple sets of positioning teeth along the length direction, thereby ensuring that the silicon wafers can be accurately lifted and positioned during loading. Multiple sets of positioning teeth are arrayed along the length direction of the top tooth base, enabling the synchronous lifting and positioning of multiple sets of silicon wafers, meeting the high-efficiency requirements of batch processing of silicon wafers in automated production. Each set of positioning teeth consists of a first positioning tooth and a second positioning tooth, forming a space between them to accommodate two silicon wafers arranged opposite each other.

[0020] Because two silicon wafers positioned opposite each other need to be inserted into a set of positioning teeth simultaneously, static electricity is easily generated during the wafer assembly process due to friction and induction. This can lead to electrostatic repulsion and separation of the two wafers, making it difficult to accurately insert them into the top teeth. In this application, the tip of the first positioning tooth is farther from the first surface than the tip of the second positioning tooth. This ensures that when the two opposing silicon wafers enter the positioning teeth, the wafers first contact the first sidewall of the first positioning tooth. The space next to the tip of the first sidewall is relatively spacious, preventing the open wafers from colliding with the second positioning tooth. Furthermore, the conductive coating on the first sidewall quickly conducts the charge accumulated on the surface of the wafer to the grounded top tooth base at the moment of contact, achieving static electricity elimination. After static electricity elimination, the two wafers lose their mutual repulsive force and can fit tightly together, smoothly inserting into the space between the first and second positioning teeth. This effectively avoids the wafer opening phenomenon caused by electrostatic repulsion, reduces the risk of the wafers colliding and breaking with the top of the top teeth, reduces material waste, significantly improves the accuracy and stability of wafer assembly, and reduces production costs. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 A front view of a toothed structure provided in an embodiment of this utility model;

[0023] Figure 2 A side view of a top tooth structure provided in an embodiment of this utility model;

[0024] Figure 3 One of the structural schematic diagrams of a guide groove with a top tooth structure provided in an embodiment of this utility model;

[0025] Figure 4 A second schematic diagram of a guide groove with a top tooth structure provided in an embodiment of this utility model;

[0026] Figure 5 The third schematic diagram of a guide groove with a top tooth structure provided in an embodiment of this utility model.

[0027] Explanation of reference numerals in the attached figures:

[0028] 10-Top tooth base; 11-First surface; 12-Conductive tape;

[0029] 20 - Positioning tooth; 21 - First positioning tooth; 211 - First sidewall; 212 - First wedge-shaped surface; 22 - Second positioning tooth; 221 - Second sidewall; 222 - Second wedge-shaped surface; 23 - Conductive coating;

[0030] 30 - Guide groove; 31 - First groove wall; 32 - Second groove wall; 33 - Third groove wall; 34 - Fourth groove wall; 35 - Fifth groove wall; 36 - Bottom of guide groove; 37 - Opening of guide groove. Detailed Implementation

[0031] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0032] In this application, the terms "installation," "setup," "equipped with," "connection," and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0033] Furthermore, the terms "first," "second," etc., are primarily used to distinguish different devices, elements, or components (which may be the same or different in specific type and construction), and are not intended to indicate or imply the relative importance or quantity of the indicated devices, elements, or components. Unless otherwise stated, "a plurality of" means two or more.

[0034] In the photovoltaic cell manufacturing field, TOPCON (Tunnel Oxide Passivated Contact) cells have become the mainstream technology due to their excellent photoelectric conversion efficiency. In the TOPCON cell production process, diffusion and annealing are core processes for forming the critical electrical structure, and the stability and reliability of their automated wafer loading directly determine the cell production quality and efficiency. Although existing automated wafer loading equipment has achieved automatic feeding, transport, and loading of silicon wafers, significant technical bottlenecks still exist in practical applications due to the characteristics of silicon wafer materials and the process environment.

[0035] During wafer loading, due to the high surface resistivity of silicon wafers and the relatively dry process environment, static electricity is easily generated by friction or induction. Adjacent silicon wafers, after generating static electricity, repel each other due to like charges, resulting in an open gap and abnormal wafer spacing. Existing top-tooth loading mechanisms, based on a fixed-size design, struggle to adapt to the irregular shape of open silicon wafers, preventing precise embedding of the wafers into the top-tooth positioning slots. During loading, frequent rigid collisions occur between the silicon wafers and the top of the top teeth. According to production data, this results in a wafer breakage defect rate as high as 3%-5%, increasing raw material waste costs and reducing equipment uptime due to downtime for replacing broken pieces, severely hindering production efficiency improvements.

[0036] In view of this, some embodiments of this application provide a top tooth structure and a quartz boat loading and unloading mechanism. By having the top of the first positioning tooth farther away from the first surface than the top of the second positioning tooth, and the conductive coating on the first sidewall of the first positioning tooth, the silicon wafer opening phenomenon caused by electrostatic repulsion can be effectively avoided, reducing the risk of silicon wafer colliding and breaking with the top of the top tooth, reducing raw material loss, and significantly improving the accuracy and stability of wafer loading, thereby reducing production costs.

[0037] The present application will be described in detail below through specific embodiments:

[0038] The top tooth structure of the embodiments of this application, such as Figures 1 to 5 As shown, a toothed structure for lifting a silicon wafer from below includes:

[0039] Top tooth base 10, top tooth base 10 having a first surface 11;

[0040] Multiple sets of positioning teeth 20 are arranged on the first surface 11 along the length direction of the top tooth base 10. Each set of positioning teeth 20 includes a first positioning tooth 21 and a second positioning tooth 22. The first positioning tooth 21 and the second positioning tooth 22 are used to place two silicon wafers arranged opposite to each other. The tip of the first positioning tooth 21 is further away from the first surface 11 than the tip of the second positioning tooth 22.

[0041] The first positioning tooth 21 has a first sidewall 211 facing the second positioning tooth 22, and the second positioning tooth 22 has a second sidewall 221 facing the first positioning tooth 21. A conductive coating 23 is provided on the first sidewall 211 so that when the silicon wafer close to the first sidewall 211 is attached to the first sidewall 211, static electricity on the silicon wafer can be eliminated.

[0042] In the top tooth structure provided in this embodiment, the top tooth base 10 serves as the basic component of the entire structure, providing a stable support platform for the positioning teeth 20 and the silicon wafers. Its flat first surface 11 serves as the reference for installing the positioning teeth 20, ensuring the installation position accuracy of multiple sets of positioning teeth 20 along the length direction, thereby ensuring that the silicon wafers can be accurately lifted and positioned during loading. Multiple sets of positioning teeth 20 are arrayed along the length direction of the top tooth base 10, enabling synchronous lifting and positioning of multiple sets of silicon wafers, meeting the high-efficiency requirements of batch processing of silicon wafers in automated production. Each set of positioning teeth 20 consists of a first positioning tooth 21 and a second positioning tooth 22, forming a space between them to accommodate two silicon wafers positioned opposite each other.

[0043] Since the two silicon wafers set opposite to each other need to be inserted into a set of positioning teeth 20 at the same time, static electricity is easily generated due to friction and induction during the wafer loading process, which leads to the two silicon wafers electrostatic repulsion and separation, making it difficult to accurately load them into the top teeth. In this application, the tip of the first positioning tooth 21 is farther away from the first surface 11 than the tip of the second positioning tooth 22. This allows the silicon wafers to first contact the first sidewall 211 of the first positioning tooth 21 when two opposing silicon wafers enter the positioning tooth 20. The space next to the tip of the first sidewall 211 is relatively spacious, preventing the open silicon wafer from colliding with the second positioning tooth 22. Furthermore, the conductive coating 23 on the first sidewall 211 quickly conducts the charge accumulated on the surface of the silicon wafer to the grounded top tooth base 10 at the moment of contact, achieving static electricity elimination. After static electricity elimination, the two silicon wafers lose their mutual repulsive force and can fit tightly together, smoothly inserting into the space between the first positioning tooth 21 and the second positioning tooth 22. This effectively avoids the phenomenon of silicon wafers opening due to electrostatic repulsion, reduces the risk of silicon wafers colliding and breaking with the top of the top tooth, reduces raw material loss, significantly improves the accuracy and stability of wafer assembly, and reduces production costs.

[0044] The positioning teeth 20 can be made of ceramic material. Multiple sets of positioning teeth 20 are inserted into the top tooth base 10 and fixed to the side of the top tooth with screws for easy disassembly.

[0045] In some embodiments, such as Figure 1 As shown, a conductive coating 23 is provided on the second sidewall 221 so that static electricity on the silicon wafer can be eliminated when the silicon wafer close to the second sidewall 221 is attached to the second sidewall 221.

[0046] Therefore, a conductive coating 23 is also provided on the second sidewall 221. The conductive coatings 23 on both sides are electrically connected and grounded through the top tooth base 10, forming a complete static discharge circuit. When the two silicon wafers are respectively attached to the first sidewall 211 and the second sidewall 221, the static electricity on the surface of the silicon wafers on both sides is eliminated simultaneously, improving the elimination efficiency. Moreover, the conductive coatings 23 on both sides provide symmetrical contact force, so that the silicon wafers maintain a parallel posture during the static electricity elimination process, further reducing the probability of silicon wafer jamming.

[0047] In some embodiments, such as Figure 1 As shown, the top of the first positioning tooth 21 has a first wedge-shaped surface 212. The side of the first wedge-shaped surface 212 that is closer to the second positioning tooth 22 is closer to the first surface 11 than the side that is farther away from the second positioning tooth 22. The top of the second positioning tooth 22 has a second wedge-shaped surface 222. The side of the second wedge-shaped surface 222 that is closer to the first positioning tooth 21 is closer to the first surface 11 than the side that is farther away from the first positioning tooth 21.

[0048] The essence of the wedge-shaped surface is to use the inclined surface for guidance to achieve adaptive positioning of the silicon wafer. The side of the first wedge-shaped surface 212 closer to the second positioning tooth 22 is lower (closer to the first surface 11) and the side farther away is higher, forming a slope that slopes inward (towards the second positioning tooth 22). The side of the second wedge-shaped surface 222 closer to the first positioning tooth 21 is lower and the side farther away is higher, forming a slope that slopes inward (towards the first positioning tooth 21). The two wedge-shaped surfaces together form an inwardly converging V-shaped guide structure, and the opening direction is consistent with the loading direction of the two silicon wafers.

[0049] Therefore, when the silicon wafer approaches the positioning teeth 20, the inclined surface of the wedge will generate a lateral force on the edge of the silicon wafer, pushing the silicon wafer towards the center position between the two positioning teeth 20. Even if there is a positional deviation of the silicon wafer during the transmission process, it can be automatically corrected by the guiding effect of the wedge surface, ensuring that the silicon wafer accurately falls into the predetermined position between the two teeth. Traditional right-angle teeth are prone to causing rigid collisions between the edge of the silicon wafer and the tooth tip, while the inclined structure of the wedge surface decomposes the impact force when the silicon wafer contacts into a horizontal component (guiding) and a vertical component (downward pressure), reducing impact stress and the silicon wafer edge breakage rate.

[0050] In some embodiments, such as Figure 1 and Figure 2As shown, there is a detachable guide groove 30 between the bottom end of the first positioning tooth 21 and the bottom end of the second positioning tooth 22. The guide groove 30 is configured to guide the movement direction of the silicon wafer located in the guide groove 30 so that the two silicon wafers located in the guide groove 30 fit together.

[0051] The guide groove 30 is a detachable groove body, installed between the bottom ends of the two positioning teeth 20. Its cross-sectional shape matches the edge contour of the silicon wafer. The guide groove 30 physically limits the edge of the silicon wafer, and the groove wall is provided with a smooth slope to form a converging guide channel from the opening end to the bottom of the groove. When the silicon wafer moves along the guide groove 30, the constraint of the groove wall forces the two silicon wafers to move closer to the central axis. Specifically, the two silicon wafers move towards the bottom end of the guide groove 30 under the action of gravity, thereby forcing the two opposing silicon wafers to automatically fit together.

[0052] The guide groove 30 can be made of wear-resistant materials such as polyvinyl fluoride. The conductive coating 23 must be made of a non-metallic and conductive material (metallic materials will contaminate the silicon wafer), such as polyacetylene.

[0053] In some embodiments, such as Figure 4 As shown, the guide groove 30 includes a first groove wall 31 and a second groove wall 32 arranged opposite to each other. The distance between the first groove wall 31 and the second groove wall 32 gradually increases from the bottom 36 of the guide groove to the opening 37 of the guide groove. The sides of the first groove wall 31 and the second groove wall 32 facing the bottom 36 of the guide groove are connected to each other.

[0054] This results in a V-shaped cross-section for the guide groove 30 (narrow at the bottom and wide at the opening). The two side walls of the bottom connect to form a pointed tip. During the movement of the silicon wafer, the physical constraints of the groove walls generate a centripetal force, achieving precise guidance and fit. The opening width is larger than the bottom, resembling a funnel structure. Even if the initial position of the silicon wafer is offset, it can be automatically guided through the inclined surface of the opening. When the silicon wafer enters the opening at an inclined angle, the difference in the contact sequence of the two side walls generates torque, forcing the silicon wafer to adjust its posture.

[0055] The gradually changing spacing allows for precise constraint and positioning of the silicon wafer, enabling it to slide quickly and smoothly to the predetermined position under gravity. This significantly improves wafer positioning efficiency. As the wafer slides down, the distance between the two groove walls gradually decreases, confining it to a smaller space until it accurately stops at the position where it aligns with another wafer. This effectively prevents wafer shifting or shaking during positioning, improving wafer positioning accuracy and helping to ensure the accuracy of subsequent processes and the stability of product quality.

[0056] In some embodiments, such as Figure 3 and Figure 5As shown, the guide groove 30 includes a third groove wall 33 and a fourth groove wall 34 and a fifth groove wall 35 arranged opposite to each other. The third groove wall 33 forms the bottom wall of the guide groove 30. The bottom ends of the fourth groove wall 34 and the fifth groove wall 35 are respectively connected to the two ends of the third groove wall 33. The distance between the fourth groove wall 34 and the fifth groove wall 35 gradually increases from the bottom 36 of the guide groove to the opening 37 of the guide groove.

[0057] This makes the cross-section of the guide groove 30 have an inverted trapezoidal or U-shaped structure. The third groove wall 33 is the bottom wall of the groove, providing a support reference for the bottom of the silicon wafer. The fourth groove wall 34 and the fifth groove wall 35 are symmetrically inclined, and their bottom ends are connected to the two ends of the third groove wall 33. The distance between the groove walls increases uniformly from the bottom of the groove to the groove opening, forming a symmetrical and gradually expanding structure.

[0058] The two sides of the groove gradually widen simultaneously. The groove walls can be inclined or curved to provide a smooth guiding surface. When the two silicon wafers enter the guide groove 30, they come into contact with the groove walls and slide down naturally along the groove walls under the action of gravity. This makes the friction force on the silicon wafers more uniform during the sliding process, and there will be no jamming or sudden acceleration caused by uneven surfaces or sharp corners. This achieves a gentle and stable positioning process, which is especially important for thin or fragile silicon wafers. It can significantly reduce the possibility of silicon wafers being damaged or cracked due to uneven force during the positioning process, and improve the yield of silicon wafers.

[0059] In some embodiments, such as Figure 3 and Figure 5 As shown, the distance between the bottom end of the fourth trench wall 34 and the bottom end of the fifth trench wall 35 is less than or equal to the sum of the thicknesses of the two silicon wafers.

[0060] The fourth and fifth groove walls 34 and 35 can guide the silicon wafers to move towards the third groove wall 33 under the action of gravity. Since the distance between the bottom of the fourth groove wall 34 and the bottom of the fifth groove wall 35 is less than or equal to the sum of the thicknesses of the two silicon wafers, and the width of the third groove wall 33 is less than the sum of the thicknesses of the two silicon wafers, the two silicon wafers are always close to each other along the groove walls. This ensures that the two silicon wafers can be placed tightly in the guide groove 30, so that no gaps are generated between the two silicon wafers, and the two silicon wafers will not shake or shift, thus playing a role in limiting and positioning the silicon wafers.

[0061] In some embodiments, such as Figure 1 As shown, the walls of the guide groove 30 are coated with a conductive coating 23.

[0062] As the spacing of the guide groove 30 gradually decreases from the groove opening to the bottom, static electricity between the silicon wafers can cause adsorption and adhesion (e.g., when they carry opposite charges) or mutual repulsion (e.g., when they carry the same charge), affecting insertion accuracy or causing mechanical damage. The conductive coating 23 neutralizes the surface charge of the silicon wafer, reducing electrostatic forces and ensuring the smooth insertion of the silicon wafer into the guide groove 30. Static electricity easily attracts contaminants such as dust and metal particles from the air, depositing on the silicon wafer surface and affecting device yield. The conductive coating 23 eliminates the electrostatic field, reducing the probability of particle adsorption and further improving the cleanliness of silicon wafer processing. The conductive coating can conduct the static electricity accumulated on the silicon wafer surface to the grounding system through the groove wall, preventing static electricity from accumulating in the gaps between the silicon wafers and forming high voltage.

[0063] In some embodiments, such as Figure 1 As shown, conductive tape 12 is attached to the surface of the top tooth base 10.

[0064] The conductive tape 12 (such as copper foil, aluminum foil, or carbon-based tape) allows the toothed base 10 to serve as a grounding terminal or signal transmission path for the circuit. The conductive tape 12 quickly releases static electricity from the base surface, preventing static electricity from affecting the silicon wafer. Furthermore, the conductive tape 12 can be flexibly applied, removed, or replaced. When the tape's conductivity deteriorates or wears down, only the tape needs to be replaced locally, eliminating the need to replace the entire base and reducing maintenance costs.

[0065] This application also discloses a quartz boat loading and unloading mechanism, including a frame, a guide rail, an air knife, a quartz boat, and a top tooth structure. The guide rail is mounted on the frame, the top tooth structure is slidably mounted on the guide rail, the quartz boat is mounted above the top tooth structure, and the air knife is mounted above the quartz boat. The top tooth structure and the quartz boat are adjustable in the vertical direction so that the top tooth structure can push the silicon wafer on the quartz boat onto the top tooth structure. The top tooth structure in this quartz boat loading and unloading mechanism is the aforementioned top tooth structure. Therefore, the quartz boat loading and unloading mechanism in this embodiment has roughly the same technical effect as the aforementioned top tooth structure. Since the technical effect of the top tooth structure has been fully explained, it will not be repeated here.

[0066] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this utility model.

Claims

1. A toothed structure for lifting a silicon wafer from below, characterized in that, include: A toothed base having a first surface; Multiple sets of positioning teeth are arranged on the first surface along the length direction of the top tooth base. Each set of positioning teeth includes a first positioning tooth and a second positioning tooth. The first positioning tooth and the second positioning tooth are used to place two silicon wafers arranged opposite to each other. The tip of the first positioning tooth is further away from the first surface than the tip of the second positioning tooth. The first positioning tooth has a first sidewall facing the second positioning tooth, and the second positioning tooth has a second sidewall facing the first positioning tooth. A conductive coating is provided on the first sidewall so that when the silicon wafer near the first sidewall is attached to the first sidewall, static electricity on the silicon wafer can be eliminated.

2. The top tooth structure according to claim 1, characterized in that, A conductive coating is provided on the second sidewall so that static electricity on the silicon wafer can be eliminated when the silicon wafer near the second sidewall is attached to the second sidewall.

3. The top tooth structure according to claim 1, characterized in that, The tip of the first positioning tooth has a first wedge-shaped surface, and the side of the first wedge-shaped surface closer to the second positioning tooth is closer to the first surface than the side farther from the second positioning tooth. The tip of the second positioning tooth has a second wedge-shaped surface, and the side of the second wedge-shaped surface closer to the first positioning tooth is closer to the first surface than the side farther from the first positioning tooth.

4. The top tooth structure according to any one of claims 1-3, characterized in that, The bottom end of the first positioning tooth and the bottom end of the second positioning tooth have a detachable guide groove, which is configured to guide the movement direction of the silicon wafer located in the guide groove so that the two silicon wafers located in the guide groove fit together.

5. The top tooth structure according to claim 4, characterized in that, The guide groove includes a first groove wall and a second groove wall arranged opposite to each other. The distance between the first groove wall and the second groove wall gradually increases from the bottom of the guide groove to the opening of the guide groove. The sides of the first groove wall and the second groove wall facing the bottom of the guide groove are connected to each other.

6. The top tooth structure according to claim 4, characterized in that, The guide groove includes a third groove wall and a fourth groove wall and a fifth groove wall arranged opposite to each other. The third groove wall forms the bottom wall of the guide groove. The bottom ends of the fourth groove wall and the fifth groove wall are respectively connected to the two ends of the third groove wall. The distance between the fourth groove wall and the fifth groove wall gradually increases from the bottom of the guide groove to the opening of the guide groove.

7. The top tooth structure according to claim 6, characterized in that, The distance between the bottom end of the fourth trench wall and the bottom end of the fifth trench wall is less than or equal to the sum of the thicknesses of the two silicon wafers.

8. The top tooth structure according to claim 4, characterized in that, The walls of the guide grooves are all coated with a conductive coating.

9. The top tooth structure according to any one of claims 1-3, characterized in that, The surface of the top tooth base is covered with conductive tape.

10. A quartz boat loading and unloading mechanism, characterized in that, The device includes a frame, a guide rail, an air knife, a quartz boat, and a top tooth structure. The guide rail is mounted on the frame, the top tooth structure is slidably mounted on the guide rail, the quartz boat is positioned above the top tooth structure, the air knife is positioned above the quartz boat, and the top tooth structure and the quartz boat are vertically adjustable so that the top tooth structure can eject silicon wafers from the quartz boat onto the top tooth structure. The top tooth structure is as described in any one of claims 1-9.

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