A MOS transistor driving circuit and a battery management system

Abstract

This utility model discloses a MOSFET driving circuit and a battery management system for driving one or more MOSFETs, comprising: a switching module, a closing acceleration module, and a turning-off acceleration module; the switching module receives on / off control signals and controls the MOSFET to close or open according to the on / off control signals; the closing acceleration module is connected to the switching module and provides a drive current to accelerate the closing speed of the MOSFET when closing; the turning-off acceleration module is connected to the switching module and provides a discharge channel for the MOSFET gate to accelerate the turning-off speed when the MOSFET is turned off. The closing acceleration module of this driving circuit accelerates the closing speed of the MOSFET by providing a drive current when closing the MOSFET, thus enabling simultaneous driving of one or more MOSFETs and effectively improving the driving capability; the turning-off acceleration module provides a discharge channel for the MOSFET gate, accelerating the turning-off speed. Therefore, the MOSFET driving circuit and the battery management system effectively improve control speed and driving capability.

Description

Technical Field

[0001] This utility model relates to the field of control circuit technology, and in particular to a MOSFET drive circuit and a battery management system. Background Technology

[0002] MOSFETs are crucial components in electronic devices. In most control circuits, MOSFETs serve as control switching elements, requiring high control response speeds to meet circuit demands. However, due to their inherent structure, MOSFETs possess parasitic capacitance. Therefore, when closing, the capacitance needs to be "charged" until the voltage difference between the gate and source reaches a threshold voltage before closing. Conversely, when opening, due to the parasitic capacitance, the MOSFET gate retains a certain charge, remaining closed even after a turn-off command is issued. This significantly impacts the closing and opening speed of MOSFETs. It fails to meet the requirements of some high-speed electronic applications, such as battery charging and discharging control, as the MOSFET control delay leads to wasted battery energy or overcharging / discharging. Furthermore, in high-current electronic devices, multiple MOSFETs need to be connected in parallel for control. Existing drive circuits cannot meet their drive power requirements and also result in slow closing speeds, indicating insufficient drive capability. Summary of the Invention

[0003] To improve the control speed and driving capability of MOSFETs, this invention proposes a MOSFET driving circuit and a battery management system.

[0004] To achieve the above objectives, on the one hand, this utility model provides a MOSFET driving circuit for driving one or more MOSFETs, comprising: a switching module, a closing acceleration module, and a turning-off acceleration module; the switching module is used to receive a turn-on control signal and control the MOSFET to close or open according to the turn-off control signal; the closing acceleration module is connected to the switching module and is used to provide a driving current to accelerate the closing speed of the MOSFET when closing the MOSFET; the turning-off acceleration module is connected to the switching module and is used to provide a discharge channel for the gate of the MOSFET to accelerate the turning-off speed when opening the MOSFET.

[0005] Optionally, the closing acceleration module and the turning-off acceleration module are also connected to the gate of the MOS transistor.

[0006] Optionally, the MOS transistor driving circuit further includes a driving resistor; the switching module, the closing acceleration module, and the turning off acceleration module are all connected to the gate of the MOS transistor through the driving resistor.

[0007] Optionally, the switching module includes: a signal receiving switch submodule and a driving switch submodule; the signal receiving switch submodule is connected to the driving switch submodule and is used to receive an on / off control signal and control the driving switch submodule to be turned on or off according to the on / off control signal; the driving switch submodule is connected to the gate and source of the MOS transistor to provide a driving voltage.

[0008] Optionally, the signal receiving switch submodule includes: a first transistor; the base of the first transistor receives the on / off control signal, the emitter of the first transistor is grounded, and the collector of the first transistor is connected to the drive switch submodule.

[0009] Optionally, the driving switch submodule includes: a second transistor, a first diode, a second diode, and a third resistor; the emitter of the second transistor is connected to the power supply, the base is connected to the signal receiving switch module, the collector of the second transistor is connected to the anode of the first diode, the cathode of the first diode is connected to the anode of the second diode, and the cathode of the second transistor is connected to the gate and source of the MOS transistor through the driving resistor and the third resistor, respectively.

[0010] Optionally, the driving switch submodule further includes: a Zener diode; the two ends of the Zener diode are respectively connected to the driving resistor and the source of the MOSFET to limit the gate and source voltage difference of the MOSFET.

[0011] Optionally, the closing acceleration module includes a third transistor and a third diode; the collector of the third transistor is connected to the power supply through the diode, the emitter is connected to the gate of the MOS transistor through a driving resistor, and the base is connected to the switching module.

[0012] Optionally, the shutdown acceleration module includes: a fourth transistor, a fifth transistor, and a seventh resistor; the emitter of the fourth transistor is connected to the cathode of the second diode, the base of the fourth transistor is connected to the emitter of the fifth transistor, and the base of the fifth transistor is connected to the anode of the second diode; the collector of the fourth transistor is connected to the source of the MOSFET through the seventh resistor, and the collector of the fifth transistor is connected to the source of the MOSFET.

[0013] On the other hand, this utility model provides a battery management system, including: the aforementioned MOSFET driving circuit, MOSFET, and controller; the controller is connected to the MOSFET driving circuit and is used to send an on / off control signal to the MOSFET driving circuit; the MOSFET driving circuit is connected to the MOSFET and is used to control the MOSFET to close or open according to the on / off control signal; the MOSFET is used to control the battery to charge and / or discharge.

[0014] This utility model has the following beneficial effects: The MOSFET driving circuit of this invention includes a closing acceleration module and a turning-off acceleration module. The closing acceleration module provides driving current when closing the MOSFET, accelerating the closing speed of the MOSFET and enabling simultaneous driving of multiple MOSFETs, thus effectively improving the driving capability of the driving circuit. The turning-off acceleration module provides a discharge channel for the MOSFET gate when opening the MOSFET, accelerating the turning-off speed of the MOSFET. In other words, by setting the closing acceleration module and the turning-off acceleration module, the MOSFET driving circuit improves the MOSFET control speed and the driving capability of the driving circuit.

[0015] In the MOS transistor driving circuit of this invention, the closing acceleration module is connected to the power supply, the switching module and the MOS transistor gate through the third transistor and the third diode. When the switching module is turned on, it provides driving current to the MOS transistor gate. The structure is simple and can effectively improve the driving capability of the driving circuit.

[0016] The battery management system of this invention employs a closed-loop acceleration module and a closed-loop acceleration module, which can effectively improve the battery charging and / or discharging control speed and driving capability, and reduce battery energy waste and overcharging / discharging. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the MOS transistor driving circuit provided in an embodiment of this utility model; Figure 2 This is a schematic diagram of the battery management system structure provided in an embodiment of the present invention. Detailed Implementation

[0018] To make the above-mentioned objects, features, and advantages of this utility model more apparent and understandable, the specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a full understanding of this utility model. However, this utility model can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this utility model. Therefore, this utility model is not limited to the specific embodiments disclosed below.

[0019] Reference Figure 1 A MOSFET driving circuit 100 is used to drive one or more MOSFETs, comprising: a switching module, a closing acceleration module, and a turning-off acceleration module; the switching module is used to receive an on / off control signal DSG_C and control the MOSFET 200 to close or open according to the on / off control signal DSG_C; the closing acceleration module is connected to the switching module and is used to provide a driving current to accelerate the closing speed of the MOSFET 200 when closing the MOSFET 200; the turning-off acceleration module is connected to the switching module and is used to provide a discharge channel for the gate of the MOSFET 200 to accelerate the turning-off speed when opening the MOSFET 200.

[0020] The closing acceleration module and the closing acceleration module are also connected to the gate of the MOS transistor 200; furthermore, the MOS transistor driving circuit also includes a driving resistor R1; the switching module, the closing acceleration module and the closing acceleration module are all connected to the gate of the MOS transistor 200 through the driving resistor R1.

[0021] The switching module includes a signal receiving switch submodule and a driving switch submodule; the signal receiving switch submodule is connected to the driving switch submodule and is used to receive the on / off control signal DSG_C and control the driving switch submodule to be turned on or off according to the on / off control signal DSG_C; the driving switch submodule is connected to the gate and source of the MOS transistor 200 and provides the gate and source driving voltage of the MOS transistor 200.

[0022] The signal receiving switch submodule includes: a first transistor Q1; the base of the first transistor Q1 receives the on / off control signal DSG_C, the emitter of the first transistor Q1 is grounded, and the collector is connected to the driving switch submodule; the on / off control of the driving switch submodule is achieved by controlling the on / off state of the first transistor Q1 through the on / off control signal DSG_C; the first transistor Q1 is an NPN transistor; specifically, when the on / off control signal DSG_C is high, the first transistor Q1 is turned on, the driving switch submodule is turned on, and a driving voltage is provided to the gate and source of the MOS transistor 200.

[0023] Furthermore, the signal receiving switch submodule also includes: a first resistor R2 and a second resistor R3; one end of the first resistor R2 is connected to the base of the first transistor Q1, and the other end is used to receive the on / off control signal DSG_C; the two ends of the second resistor R3 are respectively connected to the base and emitter of the first transistor Q1.

[0024] The driving switch submodule includes: a second transistor Q2, a first diode D1, a second diode D2, and a third resistor R4. The emitter of the second transistor Q2 is connected to the power supply MOS_VCC, and the base is connected to the signal receiving switch module for controlling the on / off state of the signal receiving switch module. The collector of the second transistor Q2 is connected to the anode of the first diode D1, and the cathode of the first diode D1 is connected to the anode of the second diode D2. The cathode of the second transistor D2 is connected to the gate and source of the MOS transistor 200 through the driving resistor R1 and the third resistor R4, respectively. The collector of the second transistor Q2 outputs a driving voltage to the MOS transistor 200 through the first diode D1 and the second diode D2 to prevent reverse current flow.

[0025] The driving switch submodule further includes: a Zener diode ZD1, a fourth resistor R5, a fifth resistor R6, a seventh resistor R7, and a capacitor C1; the Zener diode ZD1 is connected to the driving resistor R1 and the source of the MOSFET 200 respectively to limit the gate-source voltage difference of the MOSFET 200 and prevent damage to the MOSFET 200; one end of the fourth resistor R5 is connected to the anode of the second diode D2, and the other end is connected to the source of the MOSFET 200; the fifth resistor R6 and the capacitor C1 are connected to the second transistor Q2 respectively. The emitter and base of the first transistor Q1 are connected. The base of the second transistor Q2 is connected to the signal receiving switch submodule through the seventh resistor R7. Specifically, the base of the second transistor Q2 is connected to the collector of the first transistor Q1 through the seventh resistor R7. The second transistor Q2 is a PNP transistor. When the first transistor Q1 is turned on, the second transistor Q2 is turned on and provides a driving voltage to the gate and source of the MOSFET 200 through the cathode of the second diode D2, the driving resistor R1, and the fifth resistor R5, and the MOSFET 200 is closed.

[0026] The closing acceleration module includes a third transistor Q3 and a third diode D3. The collector of the third transistor Q3 is connected to the power supply MOS_VCC through the diode D3, the emitter is connected to the gate of the MOS transistor through the drive resistor R1, and the base is connected to the switching module. Specifically, the base of the third transistor Q3 is connected to the anode of the second diode D2. When the second transistor is turned on, the third transistor Q3 is turned on and provides a drive current to the MOS transistor 200 through the drive resistor R1 to accelerate the closing speed of the MOS transistor 200.

[0027] The shutdown acceleration module includes: a fourth transistor Q4, a fifth transistor Q5, and a seventh resistor R8; the emitter of the fourth transistor Q4 is connected to the cathode of the second diode D2, the base of the fourth transistor is connected to the emitter of the fifth transistor Q5, and the base of the fifth transistor Q5 is connected to the anode of the second diode D2; the collector of the fourth transistor Q4 is connected to the source of the MOSFET through the seventh resistor R8, and the collector of the fifth transistor Q5 is connected to the source of the MOSFET; when the on / off control signal DSG_C disconnects the MOSFET 200, the second transistor Q2 is turned off, the two ends of the second diode D2 are disconnected, and the fourth transistor Q4 and the fifth transistor Q5 are turned on under the action of the gate parasitic capacitance voltage of the MOSFET 200. The charge of the gate parasitic capacitance of the MOSFET discharges through the driving resistor R1, the fourth transistor Q4, the fifth transistor Q5, and the seventh resistor R8.

[0028] Reference Figure 2A battery management system includes: a MOSFET driving circuit 100, a MOSFET 200, and a controller 300; the controller 300 is connected to the MOSFET driving circuit 100 and is used to send an on / off control signal DSG_C to the MOSFET driving circuit 100; the MOSFET driving circuit 100 is connected to the MOSFET 200 and is used to control the closing or opening of the MOSFET 200 according to the on / off control signal DSG_C; the MOSFET 200 is used to control the battery to charge and / or discharge.

[0029] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0030] The embodiments described above are merely illustrative of several implementations of this utility model, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of this utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this utility model, and these all fall within the protection scope of this utility model. Therefore, the protection scope of this utility model patent should be determined by the appended claims.

Claims

1. A MOS transistor driving circuit, characterized in that, The device is used to drive one or more MOSFETs, including: a switching module, a closing acceleration module, and a turning-off acceleration module; the switching module is used to receive a switching control signal and control the MOSFET to close or open according to the switching control signal; the closing acceleration module is connected to the switching module and is used to provide a drive current to accelerate the closing speed of the MOSFET when closing the MOSFET; the turning-off acceleration module is connected to the switching module and is used to provide a discharge channel for the gate of the MOSFET to accelerate the turning-off speed when opening the MOSFET.

2. The MOS transistor driving circuit according to claim 1, wherein The closing acceleration module and the closing acceleration module are also connected to the gate of the MOS transistor.

3. The MOS transistor driving circuit according to claim 2, wherein The MOS transistor driving circuit also includes a driving resistor; the switching module, the closing acceleration module, and the turning off acceleration module are all connected to the gate of the MOS transistor through the driving resistor.

4. The MOS transistor driving circuit according to claim 3, wherein The switching module includes a signal receiving switch submodule and a driving switch submodule; the signal receiving switch submodule is connected to the driving switch submodule and is used to receive on / off control signals and control the driving switch submodule to be turned on or off according to the on / off control signals; the driving switch submodule is connected to the gate and source of the MOS transistor to provide a driving voltage.

5. The MOS transistor driving circuit according to claim 4, wherein The signal receiving switch submodule includes: a first transistor; the base of the first transistor receives the on / off control signal, the emitter of the first transistor is grounded, and the collector of the first transistor is connected to the drive switch submodule.

6. The MOS transistor driving circuit according to claim 4, wherein The driving switch submodule includes: a second transistor, a first diode, a second diode, and a third resistor; the emitter of the second transistor is connected to the power supply, the base is connected to the signal receiving switch module, the collector of the second transistor is connected to the anode of the first diode, the cathode of the first diode is connected to the anode of the second diode, and the cathode of the second transistor is connected to the gate and source of the MOS transistor through the driving resistor and the third resistor, respectively.

7. The MOS transistor driving circuit according to claim 6, wherein The driving switch submodule further includes a Zener diode; the two ends of the Zener diode are respectively connected to the driving resistor and the source of the MOSFET to limit the gate and source voltage difference of the MOSFET.

8. The MOS transistor driving circuit according to any one of claims 1-7, characterized in that, The closing acceleration module includes a third transistor and a third diode; the collector of the third transistor is connected to the power supply through the diode, the emitter is connected to the gate of the MOS transistor through a driving resistor, and the base is connected to the switching module.

9. The MOS transistor driving circuit according to claim 6, wherein The shutdown acceleration module includes: a fourth transistor, a fifth transistor, and a seventh resistor; the emitter of the fourth transistor is connected to the cathode of the second diode, the base of the fourth transistor is connected to the emitter of the fifth transistor, and the base of the fifth transistor is connected to the anode of the second diode; the collector of the fourth transistor is connected to the source of the MOSFET through the seventh resistor, and the collector of the fifth transistor is connected to the source of the MOSFET.

10. A battery management system, characterized by, include: The MOSFET driving circuit, MOSFET, and controller as described in any one of claims 1-9; the controller is connected to the MOSFET driving circuit and is used to send an on / off control signal to the MOSFET driving circuit; the MOSFET driving circuit is connected to the MOSFET and is used to control the MOSFET to close or open according to the on / off control signal; the MOSFET is used to control the battery to charge and / or discharge.

Images