Semiconductor die bonder suction nozzle

CN224746915UActive Publication Date: 2026-09-11NANTONG SANRISE INTEGRATED CIRCUIT CO LTD
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Patent Information

Application Number
CN202521809558.4
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-08-25
Publication Date
2026-09-11
Estimated Expiration
2035-08-25

AI Technical Summary

Technical Problem

[0004]半导体封装工艺中导致贴片倾斜发生的因素较多且复杂,实际装片作业中,通过设备检查、优化工艺参数等措施,虽然可以改善贴片倾斜,但不能彻底解决问题

Benefits of technology

[0007]本实用新型提供一种半导体固晶机吸嘴,通过提供一种基于多气路协同调控的固晶吸嘴结构,在芯片拾取和固晶阶段控制芯片倾斜度,可有效改善半导体封装领域装片工艺一直存在的芯片倾斜问题,提高装片精度,提升封装良率。

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Abstract

The utility model discloses a semiconductor die bonder suction nozzle, still longitudinally arrange multiple same specification and mutually independent internal air path in center air path, multiple internal air path is evenly distributed to the center of center air path in a circle, and the gas hole end face of center air path and multiple internal air path is arranged and contacts with chip surface cooperation in the plane, and center air path and multiple internal air path are connected respective air pressure control system, and multiple air pressure control system signal connects production control system, and production control system communication connects chip tilt detection system, and multiple air pressure control system detects and controls the working air pressure of the gas hole end face of center air path and multiple internal air path according to the tilt data signal of chip tilt detection system, to suppress and overcome the tilt of chip. The chip inclination is controlled in the chip pickup and die bonder stage through the application, can effectively improve the chip tilt problem that the die bonder field die mounting process has been existing, improves the die mounting precision, and promotes the packaging yield.
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Description

Technical Field

[0001] This utility model relates to the field of semiconductor discrete device packaging technology, and in particular to a semiconductor die bonder nozzle. Background Technology

[0002] In the semiconductor packaging field, die bonding is an essential step in the packaging process. Its purpose is to secure each die from the wafer to a designated position on the packaging substrate or lead frame. This process is primarily controlled by the vacuum nozzles and robotic arms of a semiconductor die bonder. Die bonding accuracy is one of the direct factors affecting the yield of semiconductor products.

[0003] Currently, chip tilting remains a persistent problem due to issues related to equipment, processes, materials, and technology in the packaging process. The direct manifestation of tilting is excessive variation in solder layer thickness, leading to significant impacts including uneven heat dissipation, localized overheating, and solder layer fatigue failure. In terms of electrical performance, it causes uneven current distribution, increased on-resistance, and increased switching losses. Furthermore, tilting increases mechanical stress during the molding process, potentially causing microcracks in the chip. Additionally, on the lower tilt side, solder is more prone to flow obstruction due to unevenness, leading to voids. Solding tilting is a key aspect of improving semiconductor packaging technology and enhancing chip performance.

[0004] The factors causing die tilting in semiconductor packaging processes are numerous and complex. While equipment checks and process parameter optimization can improve tilting during actual die mounting operations, they cannot completely solve the problem. Therefore, an effective method is needed to directly control die tilting and improve die mounting position accuracy. Utility Model Content

[0005] The purpose of this invention is to provide a semiconductor die bonder nozzle that addresses and compensates for the shortcomings of current technology, enables effective control of chip mounting accuracy, thereby improving packaging yield and enhancing the electrical performance and reliability of semiconductor devices.

[0006] To achieve the above technical objectives, this utility model provides a semiconductor die bonder nozzle. The nozzle has a hollow structure and is connected to a gas source to form a central gas path. Multiple internal gas paths of the same specifications and independent of each other are arranged longitudinally within the central gas path. These internal gas paths are evenly distributed circumferentially relative to the center of the central gas path. The air vents of the central gas path and the multiple internal gas paths are coplanar and contact the chip surface. The central gas path and the multiple internal gas paths are respectively connected to their respective air pressure detection and control systems. These air pressure detection and control systems are signal-connected to a production control system. The production control system is communicatively connected to a chip tilt detection system. Based on the tilt data signal from the chip tilt detection system, the multiple air pressure detection and control systems detect and control the working air pressure of the air vents of the central gas path and the multiple internal gas paths to suppress and overcome chip tilt.

[0007] This invention provides a semiconductor die bonder nozzle. By providing a die bonder nozzle structure based on multi-air path coordinated control, the chip tilt can be controlled during the chip pickup and die bonding stages, which can effectively improve the chip tilt problem that has always existed in the wafer mounting process in the semiconductor packaging field, improve the wafer mounting accuracy, and increase the packaging yield.

[0008] As a further improvement, the air pressure monitoring system includes a barometer and an air pressure valve.

[0009] As a further improvement, the tilt data signal of the chip tilt detection system is fed back from the height information of the four vertex regions of the chip.

[0010] As a further improvement, the height information includes: the thickness of the solder on the chip and the maximum height difference, and the height information further forms the actual tilt angle.

[0011] As a further improvement, the end faces of the air holes in the central air passage and the plurality of internal air passages are all circular, and the outer walls of the plurality of internal air passages are arranged tangentially to the inner wall of the central air passage.

[0012] As a further improvement, the diameter ratio of the end faces of the air holes in the central air passage and the plurality of internal air passages is 1:4.

[0013] As a further improvement, the internal air passages are three in number and arranged at 120° intervals.

[0014] As a further improvement, the gas source has both positive and negative pressure modes.

[0015] This invention provides a semiconductor die bonder nozzle structure with multi-air path coordinated control, which effectively controls the wafer tilt and further improves product performance. Attached Figure Description Figure 1 This is a schematic diagram of the nozzle end of this utility model; Figure 2 This is a schematic diagram of the cross-section of the nozzle end of this utility model.

[0016] Attached labels: 1. Nozzle, 2. Central air path, 3. Internal air path, 4. Chip, 5. Solder. Detailed Implementation

[0017] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0018] like Figures 1 to 2 As shown, this utility model provides a semiconductor die bonder nozzle 1. The nozzle has a hollow structure and is connected to a gas source to form a central gas path 2. Multiple internal gas paths 3 of the same specifications and independent of each other are arranged longitudinally in the central gas path 2. The multiple internal gas paths 3 are evenly distributed circumferentially relative to the center of the central gas path 2. The air vents of the central gas path 2 and the multiple internal gas paths 3 are coplanar and in contact with the surface of the chip 4. The central gas path 2 and the multiple internal gas paths 3 are respectively connected to their respective air pressure detection and control systems. The multiple air pressure detection and control systems are signal-connected to a production control system. The production control system is communicatively connected to a chip tilt detection system. The multiple air pressure detection and control systems detect and control the working air pressure of the air vents of the central gas path 2 and the multiple internal gas paths 3 according to the tilt data signal from the chip tilt detection system, so as to suppress and overcome the tilt of the chip 4.

[0019] This invention provides a semiconductor die bonder nozzle. By providing a die bonder nozzle structure based on multi-air path coordinated control, the chip tilt can be controlled during the chip pickup and die bonding stages, which can effectively improve the chip tilt problem that has always existed in the wafer mounting process in the semiconductor packaging field, improve the wafer mounting accuracy, and increase the packaging yield.

[0020] As a further improvement, the air pressure monitoring system includes a barometer and an air pressure valve.

[0021] As a further improvement, the tilt data signal of the chip tilt detection system is fed back from the height information of the four vertex regions of the chip.

[0022] As a further improvement, the height information includes: the thickness of the solder on the chip and the maximum height difference, and the height information further forms the actual tilt angle.

[0023] As a further improvement, the end faces of the air holes of the central air passage 2 and the plurality of internal air passages 3 are all circular, and the outer walls of the plurality of internal air passages 3 are arranged tangentially to the inner wall of the central air passage 2.

[0024] As a further improvement, the diameter ratio of the end faces of the air holes of the central air passage 2 and the plurality of internal air passages 3 is 1:4.

[0025] As a further improvement, the internal air passages 3 are three in number and arranged at 120° intervals.

[0026] As a further improvement, the gas source has both positive and negative pressure modes.

[0027] This invention provides a semiconductor die bonder nozzle structure with multi-air path coordinated control, which effectively controls the wafer tilt and further improves product performance.

[0028] In a preferred embodiment, this invention addresses the chip tilting problem in the die bonding process of semiconductor packaging technology. It proposes a semiconductor die bonder nozzle structure based on multi-path airflow control. For example... Figure 1 As shown, unlike traditional single-air-path nozzles, the nozzle of this invention has three independent air paths with the same diameter and an included angle of 120°. Each air path is independently controlled by a corresponding air valve. The diameter of the independent air path is proportional to the diameter of the nozzle, with a specific ratio of 1:4. For example, when the nozzle diameter is 1.2 mm, the diameter of its internal independent air path is 0.3 mm.

[0029] The specific implementation details of this utility model are as follows: 1. Tilt control during chip pickup stage During chip 4 pickup, the central air path 2 and the three independent internal air paths 3 of the multi-air path control nozzle of this invention work simultaneously and maintain the same air pressure difference. The addition of the three internal air paths 3, distributed at 120°, avoids the problem of uneven negative pressure distribution on the chip 4 surface caused by the mechanical angle deviation of the central air path of the traditional nozzle. This further ensures that the nozzle 1 can maintain the original flatness of each chip (die) on the wafer when picking up chip 4, increases chip adsorption strength, and improves wafer mounting accuracy.

[0030] 2. Tilting control during chip die bonding During the die bonding process, the multi-air-path adjustable nozzle structure of this invention can be combined with a tilt sensing and detection system to jointly solve the chip 4 tilt problem. When chip tilt occurs during die bonding due to factors such as chip 4 pickup or uneven solder 5 thickness distribution, the chip tilt detection system provides feedback on the actual tilt angle, height difference, and other specific positional information of the chip. The multi-air-path adjustable nozzle structure of this invention can adjust the air pressure difference of the three independent internal air paths 3 according to the solder thickness and chip tilt. At this time, the central air path 2 is closed, and the subsequent chip tilt suppression work is completed by increasing the air pressure value of the corresponding air path in the area where the chip solder thickness is too high.

[0031] The specific implementation method of chip tilt control based on the multi-air-path controlled semiconductor die bonder nozzle structure is as follows: (1) The detection system provides feedback on chip tilt. When chip tilt that affects packaging yield is detected, the sensing system provides specific chip tilt information, including the thickness of solder 5 at different positions on the surface of chip 4, to obtain the chip tilt information, such as... Figure 1 As shown, the solder 5 at the upper right corner of chip 4 is significantly thicker.

[0032] (2) The independent internal air passages 3 inside the nozzle adjust the air pressure difference to suppress the tilt of the chip 4. When the sensing system detects that the solder 5 at the upper right corner of the chip 4 is too thick and the chip 4 is tilted at the upper right corner, it can... Figure 2 The independent internal air passages 31 and 33 inside the central nozzle are activated for pressure compensation. At this time, the central air passage 2 and the second internal air passage 32 are closed. The upper right corner of the chip 4 experiences a greater negative pressure than other areas during the die-loading process, thus controlling the thickness of the solder 5 and quickly suppressing the tilting of subsequent chips. This effectively improves die-loading accuracy and packaging yield.

[0033] This invention provides a semiconductor die bonder nozzle that can improve packaging yield. By providing a die bonder nozzle structure based on multi-path coordinated control, it controls the chip tilt during chip pickup and die bonding stages, effectively improving the chip tilt problem that has always existed in semiconductor packaging processes, thus increasing bonding accuracy and packaging yield.

[0034] This invention provides a semiconductor die bonder nozzle that improves product performance. Through a multi-path coordinated control structure, the nozzle effectively controls the die tilt, preventing solder layer fatigue failure caused by localized overheating from a heat dissipation perspective. In terms of electrical performance, it effectively improves the contact resistance between the chip and electrodes, avoiding increased on-resistance due to excessively high localized current density, thus significantly enhancing the characteristics and performance of power semiconductor products.

[0035] It should be understood that the scope of protection sought by this utility model is not limited to the non-limiting embodiments, which are merely illustrative examples. The substantive scope of protection claimed in this application is further embodied in the scope provided by the independent claims and their dependent claims.

Claims

1. A semiconductor die bonder suction nozzle having a hollow structure and connected to a gas source to form a central gas path, characterized by: The central air path also includes multiple internal air paths of identical and independent specifications arranged longitudinally. These internal air paths are evenly distributed circumferentially relative to the center of the central air path. The air vent ends of the central air path and the internal air paths are arranged coplanarly and in contact with the chip surface. The central air path and the internal air paths are respectively connected to their respective air pressure detection and control systems. These air pressure detection and control systems are signal-connected to the production control system. The production control system is communicatively connected to the chip tilt detection system. The air pressure detection and control systems detect and control the working air pressure of the air vent ends of the central air path and the internal air paths according to the tilt data signal from the chip tilt detection system, so as to suppress and overcome the tilt of the chip.

2. The semiconductor die bonder suction nozzle of claim 1, wherein: The air pressure detection and control system includes a barometer and an air pressure valve.

3. The semiconductor die bonder suction nozzle of claim 1, wherein: The tilt data signal of the chip tilt detection system is fed back from the height information of the four vertex regions of the chip.

4. A semiconductor die bonder nozzle according to claim 3, characterized in that: The height information includes: the thickness of the solder on the chip and the maximum height difference, and the height information further forms the actual tilt angle.

5. The semiconductor die bonder nozzle of claim 1 wherein: The air vents of the central air passage and the plurality of internal air passages are all circular, and the outer walls of the plurality of internal air passages are arranged tangentially to the inner wall of the central air passage.

6. The semiconductor die bonder nozzle of claim 1 wherein: The diameter ratio of the end faces of the air vents in the central air passage and the plurality of internal air passages is 1:

4.

7. The semiconductor die bonder nozzle of claim 1 wherein: The internal air passages are three in number and arranged at 120° intervals.

8. The semiconductor die bonder nozzle of claim 1 wherein: The gas source has both positive and negative pressure modes.