Air intake structure, semiconductor process gas supply system and apparatus

Abstract

The utility model discloses a kind of air intake structure, semiconductor process's gas supply system and equipment.The air intake structure is located above in reaction cavity, comprising: first airway and second airway are used to pass into first gas and second gas respectively;Gas mixing chamber, its air inlet is connected with the first airway and the second airway, so that the first gas and the second gas are primary mixed in the gas mixing chamber, obtain primary mixed gas, and the gas outlet caliber of the gas mixing chamber is less than the air inlet caliber, so that the primary mixed gas is secondary mixed when output, obtain final mixed gas.The above-mentioned air intake structure can delay the mixing point of two kinds of process gas which are easy to react, avoid its early mixing reaction to generate solid particles in transmission process, and also can improve the mixing effect of delayed mixing, so as to ensure the film quality of equipment and equipment reliability.

Description

Technical Field

[0001] This utility model relates to the technical field of semiconductor manufacturing, specifically to an air intake structure, a gas supply system for semiconductor processes, and equipment for semiconductor processes. Background Technology

[0002] For silicon boron nitride (SiBN) semiconductor processes, the process gases include several gases such as B₂H₆ and NH₃. During the deposition stage, all reacting gases must flow into the reaction chamber simultaneously and be ionized under radio frequency (RF) radiation. This ionization allows gases with high bond energies, which are less prone to new reactions at room temperature or low temperatures, to undergo new polymerization reactions in an ionized state. However, B₂H₆ and NH₃ are highly reactive, reacting rapidly even at room temperature and pressure, producing a large amount of white powdery material that adheres to the inner wall of the gas pipes.

[0003] In existing deposition processes, the mixing point for multiple gas inlets is typically completed at or before the manifold assembly. The mixed gas is then transported to the wafer surface within the reaction chamber via a pipeline. Therefore, the existing gas inlet structure is unsuitable for the deposition process described above. This can cause the B2H6 and NH3 gases to react prematurely during transport, generating unwanted chemical substances prematurely. This significantly impacts process efficiency and the stability of the entire equipment. For example, prematurely generated powdery particles can accumulate in the pipeline, causing blockages and other problems.

[0004] In order to solve the above-mentioned problems in the prior art, there is an urgent need in the field for an improved gas inlet structure that can delay the mixing point of two easily reactive process gases, prevent them from mixing and reacting prematurely during the transmission process to generate solid particles, and at the same time improve the gas mixing effect of delayed mixing, thereby ensuring the film formation quality and equipment reliability. Utility Model Content

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] To overcome the aforementioned defects in the existing technology, this utility model provides an air intake structure, a gas supply system for semiconductor processes, and a semiconductor process device. These devices can delay the mixing point of two easily reactive process gases, preventing them from mixing and reacting prematurely to generate solid particles during transmission. They can also improve the gas mixing effect of the delayed mixing, thereby ensuring the film formation quality and reliability of the device.

[0007] Specifically, according to the first aspect of this utility model, the air intake structure is located above the reaction chamber and includes: a first air passage and a second air passage for introducing a first gas and a second gas, respectively; a mixing chamber, the air inlet of which is connected to the first air passage and the second air passage, so that the first gas and the second gas are initially mixed in the mixing chamber to obtain a primary mixed gas, and the outlet diameter of the mixing chamber is smaller than the inlet diameter, so that the primary mixed gas is secondarily mixed when output to obtain a final mixed gas.

[0008] Furthermore, the gas supply system for the semiconductor process provided according to the second aspect of this utility model includes: a gas distribution manifold assembly connected to a gas box for distributing the process gas supplied by the gas box equally into multiple reaction chambers, wherein the process gas includes a first gas and a second gas; and the gas inlet structure provided in the first aspect of this utility model, disposed above each of the reaction chambers and connected to the gas distribution manifold assembly for mixing the first gas and the second gas inside the upper part of each of the reaction chambers and sending the mixed gas into the reaction chambers.

[0009] Furthermore, the semiconductor process apparatus provided according to the third aspect of the present invention includes: a reaction chamber; and a gas supply system for the semiconductor process provided in the second aspect of the present invention, for introducing a final mixture of two process gases into the reaction chamber to carry out the process reaction. Attached Figure Description

[0010] The above-described features and advantages of this invention can be better understood after reading the following detailed description of the embodiments of this disclosure in conjunction with the accompanying drawings. In the drawings, the components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0011] Figure 1 A schematic diagram of the structure of an apparatus for a semiconductor process according to some embodiments of the present invention is shown;

[0012] Figure 2 A schematic diagram of the structure of a manifold assembly according to some embodiments of the present invention is shown;

[0013] Figure 3AA top view of an air intake structure provided according to some embodiments of the present invention is shown;

[0014] Figure 3B A bottom view of an air intake structure provided according to some embodiments of the present invention is shown;

[0015] Figure 4 A cross-sectional structural schematic diagram of a gas supply system for a semiconductor process according to some embodiments of the present invention is shown;

[0016] Figure 5 A cross-sectional structural schematic diagram of an air intake structure provided according to some other embodiments of the present invention is shown;

[0017] Figure 6 A cross-sectional structural schematic diagram of an air intake structure according to some other embodiments of the present invention is shown; and

[0018] Figure 7 A flowchart is shown of a semiconductor process method provided according to some embodiments of the present invention.

[0019] Figure label:

[0020] 10. Equipment for semiconductor processes;

[0021] 100 Gas supply system;

[0022] 110 manifold assembly;

[0023] 111 Air box;

[0024] 112 Main gas distribution block;

[0025] 113 First manifold;

[0026] 114 Second manifold;

[0027] 115 First intake air distribution block;

[0028] 116 Second intake air distribution block;

[0029] 120 intake structure;

[0030] 121 Mixing chamber;

[0031] 122 Air intake;

[0032] 123 Air vent;

[0033] 124 Pre-exhaust port;

[0034] 130 water-cooled plate;

[0035] 310 First airway;

[0036] 320 Second airway;

[0037] 311, 321 Air vents;

[0038] 330 intake channel;

[0039] 141. Primary spray plate;

[0040] 142 Secondary spray panels;

[0041] Steps S710 to S730. Detailed Implementation

[0042] The following specific embodiments illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. Although the description of this utility model will be presented in conjunction with preferred embodiments, this does not mean that the features of this utility model are limited to this embodiment. On the contrary, the purpose of describing the utility model in conjunction with the embodiments is to cover other options or modifications that may be derived based on the claims of this utility model. To provide a deep understanding of this utility model, many specific details will be included in the following description. This utility model may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of this utility model, some specific details will be omitted in the description.

[0043] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0044] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described device must be manufactured or operated in a specific orientation; therefore, they should not be construed as limiting the scope of this invention.

[0045] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first component, region, layer, and / or part discussed below may be referred to as the second component, region, layer, and / or part without departing from some embodiments of this utility model.

[0046] As mentioned above, in existing deposition processes, the mixing point for multiple gas inlets is typically completed at or before the manifold assembly. The mixed gas is then transported to the wafer surface within the reaction chamber via a gas delivery pipeline. Therefore, the existing gas inlet structure is unsuitable for the aforementioned deposition process, causing the B2H6 and NH3 gases to react prematurely during transport, generating unwanted chemical substances. This significantly impacts process efficiency and the overall stability of the equipment. For example, prematurely generated powdery particles can accumulate in the pipeline, leading to blockages and other problems.

[0047] To address the aforementioned problems in the existing technology, this utility model provides an air intake structure, a gas supply system for semiconductor processes, and a semiconductor process device. These devices can delay the mixing point of two easily reactive process gases, preventing them from mixing and reacting prematurely during transport to generate solid particles. They can also improve the gas mixing effect of the delayed mixing, thereby ensuring the film formation quality and reliability of the device.

[0048] In some non-limiting embodiments, the air intake structure provided in the first aspect of the present invention can be configured in the gas supply system of the semiconductor process provided in the second aspect of the present invention, and the gas supply system of the semiconductor process can be further configured in the equipment of the semiconductor process provided in the third aspect of the present invention.

[0049] The working principle of the above-described air intake structure will be described below with reference to embodiments of gas supply systems and equipment used in semiconductor processes. Those skilled in the art will understand that these embodiments of gas supply systems and equipment used in semiconductor processes are merely non-limiting implementations provided by this invention, intended to clearly demonstrate the main concept of this invention and provide specific solutions convenient for public implementation, rather than limiting all operating modes or functions of the air intake structure. Similarly, this air intake structure is also only one non-limiting implementation provided by this invention and does not constitute a limitation on all operating modes or functions of these gas supply systems and equipment used in semiconductor processes.

[0050] Please refer to Figure 1 , Figure 1 A schematic diagram of the structure of an apparatus for a semiconductor process provided according to some embodiments of the present invention is shown.

[0051] like Figure 1 As shown, in some embodiments of this utility model, the semiconductor process equipment 10 may include a plurality of reaction chambers, such as a first reaction chamber S1 and a second reaction chamber S2, and a semiconductor process gas supply system 100, for introducing a final mixture of two easily reactive process gases into the reaction chambers to carry out the process reaction.

[0052] Specifically, the gas supply system 100 for semiconductor processes mainly includes a gas distribution manifold assembly 110 and an intake structure 120. The gas distribution manifold assembly 110 can be connected to a gas chamber 111 for distributing the process gas supplied by the gas chamber 111 equally (e.g., in two) to multiple reaction chambers. Optionally, the gas chamber 111 can include several different reaction sources to provide several different process gases. In silicon boron nitride (SiBN) related semiconductor processes, the gas chamber 111 can include a first reaction source B2H6 and a second reaction source NH3 to provide the first gas B2H6 and the second gas NH3 for the process, respectively.

[0053] Specifically, it can be combined with Figure 2 Common understanding Figure 2 A schematic diagram of the structure of a manifold assembly provided according to some embodiments of the present invention is shown.

[0054] like Figure 2 As shown, in this embodiment, the manifold assembly 110 may include a main gas distribution block 112 connected to the gas box 111, used to equally distribute the reaction source within the gas box 111. Figure 1 As shown, depending on the number of reaction chambers, the main gas distribution block 112 can divide the reaction source in the gas box 111 into a corresponding number of process gases, and deliver them to the corresponding reaction chambers through the gas distribution manifold.

[0055] Furthermore, combined Figure 1 and Figure 2 As shown, in some preferred embodiments, when the gas chamber 111 includes two reaction sources, the main gas distribution block 112 outputs equally to the first reaction source and the second reaction source. The first reaction source can be transported to the first reaction chamber S1 and the second reaction chamber S2 via two first gas distribution manifolds 113. The second reaction source can be transported to the first reaction chamber S1 and the second reaction chamber S2 via two second gas distribution manifolds 114.

[0056] Furthermore, the manifold assembly 110 may also include intake gas distribution blocks located above each reaction chamber. Each intake gas distribution block may include a dendritic multi-stage gas distribution channel, for example, it may include a primary gas distribution channel to split the first gas and the second gas into two, and a secondary gas distribution channel located below it to split the first gas and the second gas into four, and so on, thereby uniformly introducing the first gas and the second gas into the intake structure 120. A first intake gas distribution block 115 may be disposed above the first reaction chamber S1. A second intake gas distribution block 116 may be disposed above the second reaction chamber S2.

[0057] Continue as Figure 1 As shown, in some embodiments, the air intake structure 120 can be respectively disposed above the interior of reaction chamber S1 and reaction chamber S2. Here, "above the interior of the reaction chamber" can be understood as the region near the interior upper part of the reaction chamber. Furthermore, the air intake structure 120 in each reaction chamber can be connected to the gas distribution manifold assembly 110 for mixing the first gas and the second gas above the interior of each reaction chamber and sending the mixed gas into the reaction chamber.

[0058] Specifically, to more accurately control the amount of process gas introduced into each reaction chamber, the aforementioned manifold assembly 110 may be equipped with a flow sensor and a pneumatic valve (not shown in the attached figures). The flow sensor is used to transmit and detect the flow rate of the process gas, and the pneumatic valve is used to control the opening and closing state of the manifold. In some preferred embodiments, during the semiconductor process, the pneumatic valve can be opened only after the flow sensor detects that the process gas flow rate is stable, thus supplying the process gas with a stable flow rate to each reaction chamber. This is beneficial for improving the stability of subsequent deposition processes and the uniformity of the thin film.

[0059] Next, please refer to Figure 3A , Figure 3B as well as Figure 4 Common understanding Figure 3A A top view of an air intake structure provided according to some embodiments of the present invention is shown. Figure 3B A bottom view of an air intake structure provided according to some embodiments of the present invention is shown.

[0060] like Figure 3A and Figure 4 As shown, in some embodiments, the air intake structure 120 located above each reaction chamber may include a first air passage 310, a second air passage 320, and a mixing chamber 121. The first air passage 310 may be used to introduce a first gas (such as B2H6), wherein the flow path of the first gas may be as follows: Figure 4 As shown by the solid arrow in the diagram. The second gas passage 320 can be used to introduce a second gas (such as NH3), wherein the flow path of the second gas can be as follows. Figure 4As shown by the dashed arrow in the diagram, the first air passage 310 and the second air passage 320 are two independent air intake channels, which can prevent premature contact and reaction between the two easily reactive gases during the air intake and transmission process.

[0061] Continue as Figure 4 As shown, the air inlet 122 of the mixing chamber 121 can be connected to the first air passage 310 and the second air passage 320, allowing the first gas and the second gas to undergo primary mixing within the mixing chamber 121 to obtain a primary mixed gas. Furthermore, the diameter of the air outlet 123 of the mixing chamber 121 is smaller than the diameter of the air inlet 122, thereby forming a wide-inlet (the white air outlet area corresponding to the air inlet 122) and narrow-outlet (the white air outlet area corresponding to the air outlet 123) mixing area, ultimately achieving the desired gas mixture. Figure 4 In the illustrated embodiment, by moving the position of the mixing chamber 121 from the gas manifold assembly 110 or its upstream location in the prior art to above the reaction chamber downstream of the gas manifold assembly 110, i.e., at an appropriate position closest to the wafer, gas mixing is performed, thereby delaying the mixing point of the two easily reactive process gases and preventing them from prematurely mixing and reacting to form solid particles during transport. Furthermore, as... Figure 4 As shown, the cross-sectional shape of the mixing chamber 121 can be set to rectangular (or rectangular-like). With the help of the water-cooled plate 130 located below the air inlet structure 120, a wide-inlet and single-stage narrow-outlet mixing area is formed. This allows for two-stage mixing before the mixed gas reaches the reaction chamber, improving the mixing effect of delayed mixing and thus ensuring the film formation quality and equipment reliability.

[0062] Optionally, such as Figure 3A and Figure 3B As shown, in some embodiments, the first air passage 310 and the second air passage 320 can be annular air passages physically spaced apart from each other. The bottom of the first air passage 310 is provided with multiple air outlet channels 311, and the bottom of the second air passage 320 can be provided with multiple air outlet channels 321, so that the first gas and the second gas can be evenly transported along the air passage path to each region in the annular mixing chamber 121 downstream. Furthermore, by cooperating with the intake air distribution block in the above-mentioned manifold assembly 110, the first gas and the second gas can be evenly transported to each region of the corresponding annular first air passage 310 and annular second air passage 320 through the multi-stage air distribution channels in each intake air distribution block, thereby further improving the uniformity of the first gas and the second gas transported to the mixing chamber 121 through the first air passage 310 and the second air passage 320 in each region of the annular mixing chamber 121.

[0063] Next, please refer to Figure 5 , Figure 5 A cross-sectional structural schematic diagram of an air intake structure provided according to some other embodiments of the present invention is shown.

[0064] like Figure 5 As shown, in some preferred embodiments of this invention, a pre-exit port 124 may be included below the mixing chamber 121, and an outlet 123 is located downstream of the pre-exit port 124. The diameter of the inlet 122 in the mixing chamber 121 is larger than the diameter of the pre-exit port 124, and the diameter of the pre-exit port 124 is larger than the diameter of the outlet 123, so that the cross-sectional shape of the mixing chamber 121 can be an inverted trapezoid. Similarly, a wide-inlet and graded narrow-outlet mixing area can be formed by means of a water-cooled plate 130 located below the inlet structure 120. The white area corresponding to the pre-exit port 124 is a first-stage narrow-outlet structure, and the white area corresponding to the outlet 123 is a second-stage narrow-outlet structure. This not only prolongs the residence time of the first gas and the second gas in the mixing chamber 121, but also allows the primary mixed gas to be graded and mixed through the pre-exit port 124 and the outlet 123 respectively when output.

[0065] In the above Figure 5 In the illustrated embodiment, by performing multi-stage small-amplitude reduction of the outlet structure of the mixing chamber 121, the turbulence intensity can be gradually enhanced, avoiding the "excessive disturbance" defect of a single-stage large-amplitude reduction. This allows multiple gases to gradually mix under gradient disturbance, ultimately improving mixing accuracy, making it suitable for high-precision scenarios such as semiconductor special gas mixing. Furthermore, the reduced diameter of each stage of the "multi-stage narrow outlet" outlet structure in this embodiment lowers the local drag coefficient, thus avoiding the "pressure drop" problem of a single-stage reduction. The pressure change gradient at the outlet structure location is gentler, and energy loss is dispersed, further reducing the pressure demand of upstream gas supply and lowering system energy consumption. Moreover, the aforementioned "staged narrow outlet" outlet structure can also form a "pressure buffer barrier," attenuating downstream pressure fluctuations (such as equipment shutdowns or valve openings), reducing the impact of reverse interference on the internal mixing environment of the mixing chamber 121, and ensuring output stability.

[0066] Regarding the above Figure 4 and Figure 5 The two embodiments shown can be selected by those skilled in the art based on requirements such as processing cost, processing difficulty, and gas mixing accuracy. When there are no requirements for processing cost or processing difficulty, but a high gas mixing accuracy is desired, the embodiment shown can be preferred. Figure 5 The structure shown is a wide-inlet, stepped-narrow-outlet mixing chamber 121. This structure is preferred for applications where cost is a major concern and the quality requirements for film formation are not particularly high. Figure 4 The structure shown is a wide-inlet and single-stage narrow-outlet mixing chamber 121.

[0067] Next, please refer to Figure 6 , Figure 6 A cross-sectional structural schematic diagram of an air intake structure provided according to some other embodiments of the present invention is shown.

[0068] like Figure 6 As shown, in some preferred embodiments of this invention, to further improve the gas mixing effect, an angle structure can be formed between the outlet ends of the first air passage 310 and the second air passage 320, so that the extension lines of the two air passages can intersect within the mixing chamber 121, with the intersection point being P, allowing the first gas and the second gas to counteract each other within the mixing chamber. In this embodiment, by changing the outlet direction of the outlet ends of the first air passage 310 and the second air passage 320, the two sets of gases can counteract each other within the mixing chamber 121, thereby enhancing the gas mixing effect.

[0069] Optionally, the outlet ends of the first air passage 310 and the second air passage 320 can form a 180° angle. For example, the outlet ends of the two air passages can be located on the left and right sides or the upper and lower sides of the mixing chamber 121, so that the extension lines of the two outlet ends intersect in parallel within the mixing chamber, and the first gas and the second gas form a left-right countercurrent within the mixing chamber 121.

[0070] In some alternative embodiments, an acute angle may also be formed between the outlet ends of the first air passage 310 and the second air passage 320 so that the extension lines of the two outlet ends intersect within the mixing chamber 121, and the first gas and the second gas can form a cross-flow within the mixing chamber 121.

[0071] Furthermore, such as Figure 6 As shown, in some preferred embodiments, the included angle between the outlet ends of the first air passage 310 and the second air passage 320 can be an obtuse angle, so that the intersection point P of the extended lines of the two air passages can be located in the central region of the mixing chamber 121 or above it, and the first gas and the second gas cross and collide in the central region of the mixing chamber 121 or above it. Compared with the above embodiment where the included angle at the output end is an acute angle, in the same mixing chamber 121, the included angle at the output end in this embodiment is an obtuse angle, which can move the intersection point P upward, thereby moving the point of collision and mixing of the two airflows upward, which is beneficial to prolonging the mixing time of the two airflows and thus improving the mixing effect.

[0072] Furthermore, by changing the outlet direction of the first air passage 310 and the second air passage 320, the two groups of gases can form opposing intake structures 120 within the mixing chamber 121, thereby reducing the space required for the mixing chamber 121 and lowering processing costs and difficulty. Figure 6 As shown, the cross-sectional shape of the mixing chamber 121 can be a rectangle (corresponding to...) Figure 4 (The illustrated embodiment) or inverted trapezoid (corresponding) Figure 5The embodiment shown can be reduced to a triangular cross-sectional shape, such as an isosceles triangle, to reduce the space required for the mixing chamber 121. By means of the water-cooled plate 130 below the intake structure 120, a mixing area with a wide inlet (the white exhaust area corresponding to the intake port 122) and a single-stage narrow outlet (the white exhaust area corresponding to the exhaust port 123) can be formed.

[0073] Please continue to return Figure 3A and Figure 4 In some preferred embodiments, the air intake structure 120 may further include an air intake channel 330 for introducing cleaning gas. The air intake channel 330 may be adjacent to the air outlet 123 of the mixing chamber 121, so that during the process of introducing cleaning gas to clean the reaction chamber, the air outlet 123 can be cleaned simultaneously with the cleaning gas, thereby reducing particle accumulation at the air outlet 123 of the mixing chamber 121 and the location of the air outlet channel. In this embodiment, by aligning the air outlet path of the mixing chamber 121 with the cleaning path, the probability of particulate matter-related failures within the equipment can be reduced, thereby balancing the particle risk at the air outlet 123 location, improving the reliability of equipment operation, and enhancing film formation quality.

[0074] This concludes the basic introduction of the main structure of the air intake structure 120 provided in the first aspect of this utility model. Please continue to the next section. Figure 4 In some optional embodiments of the above-described semiconductor process gas supply system 100 provided in the second aspect of this utility model, the gas supply system 100 may further include a water-cooled plate 130 and a multi-stage spray plate located below it.

[0075] Specifically, such as Figure 4 As shown, in some embodiments, a multi-stage spray plate can be disposed below the air inlet structure 120, including a first-stage spray plate 141 with a first aperture and a second-stage spray plate 142 with a second aperture located below it. The second aperture can be smaller than the first aperture, and is used to introduce the final mixed gas after multi-stage gas homogenization into the lower part of the reaction chamber, thereby improving the uniformity of the final mixed gas sprayed onto the wafer in the reaction chamber.

[0076] Furthermore, since the temperature of the spray plate affects the temperature of the process gas sprayed through it, and process gases at different temperatures directly affect the properties of the final film, in this regard, such as... Figure 4 As shown, preferably, a water-cooled plate 130 can be provided between the air intake structure 120 and the multi-stage spray plate to adjust the temperature of the multi-stage spray plate. The specific structural configuration of the water-cooled plate 130 is not limited to the embodiment shown in this utility model. Optionally, corresponding water-cooled plates can be provided for the first-stage spray plate 141 and the second-stage spray plate 142 in the multi-stage spray plate to control their temperature individually.

[0077] This concludes the basic description of the main structure of the semiconductor process equipment 10 and its gas supply system 100 provided by this utility model. Each semiconductor process equipment may include several reaction chambers (such as the first reaction chamber S1 and the second reaction chamber S2), and each reaction chamber has an independent set of gas delivery pipelines. Each set of gas delivery pipelines consists of two separate and independent gas distribution manifolds, which deliver the process gas required for the deposition process from the gas box to each gas inlet distribution block at a set flow rate. Each gas inlet distribution block includes a multi-stage gas distribution channel, which can evenly distribute each gas into multiple equal parts through two stages, and then redistribute them to the gas inlet structure 120 through multiple gas holes.

[0078] The intake structure 120 can be composed of two parts, upper and lower. The upper part includes the terminal air distribution of two sets of air passages, consisting of a first air passage 310 and a second air passage 320, each corresponding to two independent intake pipes. A mixing chamber 121 is provided below the air outlet of each intake pipe as the lower part of the intake structure 120. Different mixing effects and cost-effectiveness can be achieved by using the intake structure 120 provided in any of the three embodiments described above.

[0079] Next, please refer to Figure 7 , Figure 7 A flowchart is shown of a semiconductor process method provided according to some embodiments of the present invention.

[0080] like Figure 7 As shown, in some embodiments of this utility model, the semiconductor process method may include the following steps. First, step S710 may be performed: the first gas and the second gas are equally distributed to multiple reaction chambers via the gas distribution manifold assembly in the gas supply system of the semiconductor process.

[0081] Specifically, it can be combined with Figure 1 It is generally understood that at the start of the thin film deposition process, the gas chamber 111 can be opened first, and the process gas can be equally distributed to multiple reaction chambers via the gas distribution manifold assembly 110 according to the type and flow rate requirements of the process gas required for the deposition process. In semiconductor processes related to silicon boron nitride (SiBN), the gas chamber 111 can simultaneously provide the first gas B2H6 and the second gas NH3 to each reaction chamber.

[0082] Optionally, in some embodiments, for processes requiring high deposition precision, such as atomic layer deposition, the stability of the process gas flow can significantly affect the parameters of the deposited thin film. To address this, the pneumatic valves in the manifold assembly 110 can be opened only after the flow rate of each process gas has been detected as stable by the flow sensor, synchronously delivering the process gas with a stable flow rate to each reaction chamber. In other words, the operating condition of the pneumatic valves in the manifold assembly 110 can be based on whether the flow rate is stable.

[0083] In some processes where the deposition accuracy requirements are not so high, such as the preparation of isolation membranes by vapor deposition, it is not necessary to wait for the gas flow rate to stabilize before introducing it into the reaction chamber. In this case, the process gas can be supplied to each reaction chamber according to the action sequence of the switching valves in the gas box 111, that is, it can be kept synchronized with or act in sync with the switching valves in the gas box 111.

[0084] Then, step S720 can be performed: the first gas and the second gas are mixed above the interior of each reaction chamber via the gas inlet structure in the gas supply system, and the final mixed gas is sent into the reaction chamber for deposition process.

[0085] Specifically, it can be done through the above Figure 4 ,or Figure 5 ,or Figure 6 The air inlet structure 120 in the provided embodiment is positioned downstream of the mixing point of the two easily reactive process gases to prevent them from prematurely mixing and reacting to form solid particles during transport. Furthermore, since the mixing point is close to the interior of the reaction chamber, the mixing path is relatively short. To maintain the mixing effect, a mixing chamber 121 is provided in the lower part of the air inlet structure 120. Based on different cost and process mixing requirements, improvements are made from multiple dimensions, including the design of the air inlet 122, air outlet 123, cross-sectional shape, and the outlet ends of the first air passage 310 and the second air passage 320, to enhance the mixing effect.

[0086] Then, step S730 can be performed: in response to the completion of the deposition process, a cleaning gas is introduced through the air intake structure to clean the reaction chamber.

[0087] Specifically, after the deposition process is completed, the valves in the corresponding gas box 111 and gas manifold assembly 110 can be closed. Furthermore, depending on the required cycle frequency, after a certain number of deposition cycles, a chamber cleaning stage can be initiated to remove any deposits adhering to the reaction chamber. Further, such as... Figure 4 As shown, since the air inlet channel 330 for introducing cleaning gas can be adjacent to the air outlet 123 of the mixing chamber 121, the air outlet 123 can be cleaned simultaneously with the cleaning gas during the process of introducing cleaning gas to clean the reaction chamber. This allows for the removal of deposits adhering to the air outlet 123 of the mixing chamber 121 and its corresponding air outlet channel. After completing the preparation work for the next deposition process, the next deposition process can be cycled again, i.e., step S710 can be executed.

[0088] By combining the gas supply system 100 including the air intake structure 120 and the semiconductor process equipment 10, as well as the semiconductor process processing method, the gas mixing requirements of a specific process can be met, achieving an ideal balance between gas mixing effect and component life (close to the cleaning path), and improving the reliability of equipment operation while obtaining better film quality.

[0089] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0090] In summary, this utility model provides an air intake structure, a gas supply system for semiconductor processes, and a semiconductor process device that can delay the mixing point of two easily reactive process gases, preventing them from mixing and reacting prematurely to generate solid particles during transmission. It can also improve the gas mixing effect of the delayed mixing, thereby ensuring the film formation quality and reliability of the device.

[0091] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An air intake structure, characterized in that, Located above the reaction chamber, The air intake structure includes: The first airway and the second airway are used to introduce the first gas and the second gas, respectively. The mixing chamber has an inlet connected to the first air passage and the second air passage, so that the first gas and the second gas are initially mixed in the mixing chamber to obtain a primary mixed gas. The outlet diameter of the mixing chamber is smaller than the inlet diameter, so that the primary mixed gas is secondary mixed when it is output to obtain a final mixed gas.

2. The intake structure as described in claim 1, characterized in that, The mixing chamber includes a pre-exit port at its lower part, and the outlet port is located downstream of the pre-exit port. The diameter of the air inlet is larger than the diameter of the pre-exit outlet, and the diameter of the pre-exit outlet is larger than the diameter of the outlet, so that the primary mixed gas is staged and mixed through the pre-exit outlet and the outlet respectively when it is output.

3. The intake structure as described in claim 1, characterized in that, An angle structure is formed between the outlet ends of the first air passage and the second air passage so that the extension lines of the two air passages intersect in the mixing chamber, so that the first gas and the second gas counteract each other in the mixing chamber.

4. The intake structure as described in claim 3, characterized in that, The angle between the outlet ends of the first airway and the second airway is an obtuse angle, so that the intersection point of the extension lines of the two airways is located in the central region of the mixing chamber or above it.

5. The intake structure as described in claim 1, characterized in that, include: The air intake passage is used to introduce clean gas. The air inlet channel is adjacent to the air outlet of the mixing chamber, so that the air outlet is cleaned by the clean gas when the clean gas is introduced.

6. The intake structure as described in claim 1, characterized in that, The first air passage and the second air passage are annular air passages physically separated from each other, and the bottom of the first air passage and the second air passage are provided with multiple air outlets so that the first gas and the second gas are evenly transported along the air passage path to each area in the annular mixing chamber.

7. A gas supply system for semiconductor processes, characterized in that, include: The gas distribution manifold assembly is connected to the gas box and is used to equally distribute the process gas provided by the gas box to multiple reaction chambers, wherein the process gas includes a first gas and a second gas. as well as The intake structure as described in any one of claims 1 to 6 is disposed above each of the reaction chambers and connected to the manifold assembly for mixing the first gas and the second gas above the interior of each of the reaction chambers and sending the final mixed gas into the reaction chamber.

8. The gas supply system as described in claim 7, characterized in that, The gas distribution manifold assembly is equipped with a flow sensor and a pneumatic valve. After the flow sensor detects that the flow rate of the process gas is stable, the pneumatic valve is opened to deliver the process gas with a stable flow rate to each of the reaction chambers.

9. The gas supply system as described in claim 7, characterized in that, Also includes: A multi-stage spray plate is disposed below the air inlet structure, including a first-stage spray plate with a first aperture and a second-stage spray plate with a second aperture located below it, wherein the second aperture is smaller than the first aperture, and is used to introduce the final mixed gas after multi-stage gas equalization into the lower part of the reaction chamber. as well as A water-cooled plate is located between the air intake structure and the multi-stage spray plate, and is used to adjust the temperature of the multi-stage spray plate.

10. An apparatus for a semiconductor process, characterized in that, include: reaction chamber; as well as The gas supply system for a semiconductor process according to any one of claims 7 to 9 is used to introduce a final mixture of two process gases into the reaction chamber for process reaction.

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