A heating chamber gas treatment system and annealing apparatus

CN224757539UActive Publication Date: 2026-09-15SUZHOU MAIZHUANG SEMICON EQUIP CO LTD
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Patent Information

Application Number
CN202522084228.X
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-09-28
Publication Date
2026-09-15
Estimated Expiration
2035-09-28

AI Technical Summary

Technical Problem

在现有的退火装置中,气体在进气装置和排气装置之间的气体流动路径和气体流动方向固定,当对不同的基板进行处理或需要进行不同的测试需求时,需要改变气体在加热腔内的流动路径和/或流动方向,此时就需要多个退火装置以提供多种气体流动方式,制备多个退火装置会导致制造成本较高且需要加大的存放空间

Benefits of technology

[0024] Compared with the prior art, the beneficial effects of this utility model include at least the following:

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Abstract

The utility model discloses a kind of heating cavity gas processing system and annealing device, wherein, heating cavity gas processing system, including first side surface processing component, second side surface processing component and top processing component;First side surface processing component is provided with the first gas flow path of intercommunication with heating cavity;Second side surface processing component is provided with the second gas flow path of intercommunication with heating cavity;Top processing component is provided with on the top of heating cavity, and is provided with the top gas flow path of intercommunication with heating cavity;Wherein, at least one of first side surface processing component, second side surface processing component, top processing component is provided with switching element, switching element is used to control the gas flow path of corresponding processing component to supply or extract the gas in heating cavity into heating cavity.The heating cavity gas processing system and annealing device of the utility model are used to provide multiple gas flow modes to be suitable for the needs of different scenes, without setting multiple annealing devices.
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Description

Technical Field

[0001] This utility model relates to the field of substrate processing equipment technology, and in particular to a heating chamber gas processing system and annealing device. Background Technology

[0002] In fields such as chip manufacturing, display manufacturing, solar cell manufacturing, and lithium battery manufacturing, substrates coated with films need to undergo annealing to form the required functional dry film. During annealing, the substrate is heated and annealed within the heating chamber of an annealing apparatus. Volatile substances are generated during the annealing process, and the continuous accumulation of these volatile substances can affect the quality of the annealing process.

[0003] To ensure the annealing quality of the substrate, an inlet and an outlet device are installed in conjunction with the heating chamber during the annealing process. The inlet device supplies inert gas or clean, dry air into the heating chamber, while the outlet device removes the gas from the heating chamber. This coordinated operation continuously removes and dilutes the concentration of volatile substances, thus ensuring the annealing quality of the substrate. In existing annealing apparatuses, the gas flow path and direction between the inlet and outlet devices are fixed. When processing different substrates or requiring different tests, it is necessary to change the gas flow path and / or direction within the heating chamber. This necessitates multiple annealing units to provide various gas flow patterns. Manufacturing multiple annealing units leads to higher manufacturing costs and requires more storage space. Utility Model Content

[0004] The purpose of this invention is to provide a heating chamber gas treatment system and annealing device, which can provide multiple gas flow modes to meet the needs of different scenarios, without the need to set up multiple annealing devices.

[0005] The objective of this utility model is achieved through the following technical solution:

[0006] A heating chamber gas handling system, comprising:

[0007] A first side processing component is connected to a first side of the heating chamber, and the first side processing component is provided with a first gas flow path communicating with the heating chamber;

[0008] The second side processing component is connected to the second side of the heating cavity, and the second side processing component is provided with a second gas flow path communicating with the heating cavity;

[0009] A top processing assembly is disposed at the top of the heating chamber, and the top processing assembly is provided with a top gas flow path communicating with the heating chamber;

[0010] At least one of the first side processing component, the second side processing component, and the top processing component is provided with a switching element, which is used to control the gas flow path of the corresponding processing component to supply or extract gas from the heating chamber.

[0011] Preferably, the first side treatment component includes an air supply component and an exhaust component. The air supply component is provided with an air supply path communicating with the heating chamber, and the exhaust component is provided with an exhaust path communicating with the heating chamber. The air supply path and the exhaust path are relatively independent.

[0012] The first side processing component is provided with a switching element, which includes a first control valve disposed in the supply airflow path and a second control valve disposed in the exhaust airflow path. By controlling the opening and closing of the first control valve and the second control valve, the supply airflow path and the exhaust airflow path are connected or disconnected from the heating chamber.

[0013] Preferably, the top processing assembly and the exhaust assembly are connected to an air extraction device, and the top gas flow path and the exhaust assembly extract air from the heating chamber through the air extraction device;

[0014] And / or, the second side processing assembly and the gas supply assembly are connected to a gas supply element, and the second gas flow path and the gas supply assembly supply gas to the heating chamber through the gas supply element.

[0015] Preferably, it further includes an exhaust manifold, which is connected to the exhaust flow path and the top gas flow path respectively. The suction device is installed on the exhaust manifold and is located downstream of the exhaust flow path and the top gas flow path along the gas flow direction. The suction device is used to provide suction to the exhaust flow path and the top gas flow path.

[0016] Preferably, the exhaust manifold is connected to the exhaust flow path and the top gas flow path through parallel first fast channel or first slow channel, and the exhaust flow path and the top gas flow path can be selectively connected to the suction device through the first fast channel or the first slow channel to generate suction.

[0017] The first fast channel or the first slow channel is respectively equipped with a valve to control the gas flow rate, and the gas flow rate in the first fast channel is greater than the gas flow rate in the first slow channel.

[0018] Preferably, a heater and a temperature controller are respectively provided in the gas supply path and the second gas flow path. The heater is used to heat the gas, and the temperature controller is used to control the temperature of the gas supplied to the heating chamber by the gas supply path and the second gas flow path.

[0019] Preferably, the gas supply component includes a gas source, a connecting part, and a second fast channel and a second slow channel for connecting the gas source and the connecting part; the connecting part is used to connect to the gas supply path and the second gas flow path to supply gas, and the second fast channel or the second slow channel is respectively provided with a valve to control the gas flow rate, and the gas flow rate in the second fast channel is greater than the gas flow rate in the second slow channel;

[0020] The gas source can be selectively connected to the connecting part via the second fast channel or the second slow channel.

[0021] Preferably, multiple heating chambers are provided, and multiple first gas flow paths, multiple second gas flow paths, and multiple top gas flow paths are provided and connected to the multiple heating chambers respectively.

[0022] Preferably, the first gas flow path, the second gas flow path, and the top gas flow path are each provided with a flow equalization structure at one end extending into the heating cavity, the flow equalization structure being used to improve gas uniformity.

[0023] An annealing apparatus includes a heating chamber and a heating chamber gas treatment system as described above; the heating chamber is used to house a substrate to be annealed, and the heating chamber gas treatment system is used to create gas flow at the substrate.

[0024] Compared with the prior art, the beneficial effects of this utility model include at least the following:

[0025] By setting up a first side processing component, a second side processing component, and a top processing component, the three processing components can be used to extract or supply gas respectively. Furthermore, the three processing components can be controlled by a switching device, which can make one or more of the three processing components work and control the gas supply or extraction from the heating chamber by the processing components. By controlling the three processing components through the switching device, gas can flow into the heating chamber from different processing components and flow out of the heating chamber from different processing components, thereby changing the gas flow direction and flow path in the heating chamber. This allows a single heating chamber gas processing system to be applicable to the processing or testing needs of multiple different substrates without the need for multiple heating chambers and corresponding air intake and exhaust systems, i.e., without the need for multiple annealing devices, effectively reducing costs and space requirements. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the heating chamber gas treatment system and the heating chamber according to an embodiment of the present invention;

[0027] Figure 2This is a schematic diagram of the heating chamber gas treatment system according to an embodiment of the present invention;

[0028] Figure 3 This is a partial structural schematic diagram of the heating chamber gas treatment system according to an embodiment of the present invention;

[0029] Figure 4 This is a schematic diagram of a portion of the structure of the heating chamber gas handling system according to an embodiment of the present invention from another perspective;

[0030] Figure 5 This is a schematic diagram of another part of the structure of the heating chamber gas treatment system according to an embodiment of this utility model;

[0031] Figure 6 This is a schematic diagram of the structure of the air supply component according to an embodiment of the present utility model;

[0032] Figure 7 This is a partial exploded view of the gas supply component according to an embodiment of the present invention.

[0033] In the diagram: 100, heating chamber; 1, top treatment assembly; 11, top gas flow path; 12, extraction component; 2, first side treatment assembly; 21, first gas flow path; 22, gas supply assembly; 221, gas supply path; 223, primary pipeline diversion structure; 224, secondary orifice plate diversion structure; 225, tertiary porous sintered plate diversion structure; 23, exhaust assembly; 231, exhaust flow path; 3, second side treatment assembly; 31, second gas flow path; 311, heater; 312, temperature controller; 32, gas supply component; 321, gas source; 322, connection part; 323, second fast channel; 3231, solenoid valve; 324, second slow channel; 3241, throttle valve; 3242, pressure regulating valve; 4, exhaust manifold; 41, first fast channel; 42, first slow channel. Detailed Implementation

[0034] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided to make the present invention more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and therefore repeated descriptions of them will be omitted.

[0035] The terms used to describe position and direction in this utility model are illustrated with the accompanying drawings, but changes can be made as needed, and all such changes are included within the scope of protection of this utility model.

[0036] like Figures 1 to 7As shown, this utility model provides a heating chamber gas handling system, which is used to supply or extract gas into the heating chamber 100 to create gas flow within the heating chamber 100. The heating chamber gas handling system includes a first side handling component 2, a second side handling component 3, and a top handling component 1.

[0037] Reference Figure 1 and Figure 2 The first side processing component 2 is connected to one side of the heating chamber 100, and the first side processing component 2 is provided with a first gas flow path 21 communicating with the heating chamber 100. The first gas flow path 21 is connected to one side of the heating chamber 100. The first side processing component 2 can supply gas to or extract gas from the heating chamber 100 through the first gas flow path 21, so that the side of the heating chamber 100 connected to the first side processing component 2 forms an air inlet or an air outlet.

[0038] The first side processing assembly 2 may specifically include a gas supply assembly 22 and a gas exhaust assembly 23. The gas supply assembly 22 supplies gas to the heating chamber 100 such that the end of the heating chamber 100 connected to the gas supply assembly 22 forms an air inlet; the gas exhaust assembly 23 extracts gas from the heating chamber 100 such that the end of the heating chamber 100 connected to the gas exhaust assembly 23 forms a gas extraction end. In the first side processing assembly 2, the gas supply assembly 22 and the gas exhaust assembly 23 are connected to the same side of the heating chamber 100, for example, the gas supply assembly 22 and the gas exhaust assembly 23 are connected to the first side of the heating chamber 100, and the gas supply assembly 22 and the gas exhaust assembly 23 are independently separated from each other. When the gas supply assembly 22 is connected to the heating chamber 100 and the gas exhaust assembly 23 is blocked from the heating chamber 100, the first side of the heating chamber 100 forms an air inlet; when the gas exhaust assembly 23 is connected to the heating chamber 100 and the gas supply assembly 22 is blocked from the heating chamber 100, the first side of the heating chamber 100 forms an air outlet. By selectively connecting the air supply assembly 22 or the exhaust assembly 23 to the heating chamber 100, an air inlet or an air outlet can be formed on the first side of the heating chamber 100.

[0039] The gas supply assembly 22 or the exhaust assembly 23 can be connected to the heating chamber 100 via a switching element. Specifically, the gas supply assembly 22 can be provided with a gas supply path 221 communicating with the heating chamber 100, through which the gas supply assembly 222 supplies gas to the heating chamber 100; the exhaust assembly 23 can be provided with an exhaust path 231 communicating with the heating chamber 100, the exhaust path 231 being independent of the gas supply path 221, and the exhaust assembly 23 can extract gas from the heating chamber 100 through the exhaust path 231. The switching element can include a first control valve for controlling the on / off state of the gas supply path 221 and a second control valve for controlling the on / off state of the exhaust path 231. The gas supply path 221 of the gas supply assembly 22 and the exhaust path 231 of the exhaust assembly 23 are components of the first gas flow path 21. The first and second control valves can serve as the switching element.

[0040] When it is necessary to form an air inlet on the first side of the heating chamber 100, the first control valve opens to unblock the air supply path 221. At this time, the air supply path 221 is connected to the heating chamber 100 and can supply gas to the heating chamber 100. Simultaneously, the second control valve closes and blocks the exhaust path 231, so the exhaust path 231 cannot extract gas from the heating chamber 100. When it is necessary to form an exhaust on the first side of the heating chamber 100, the second control valve opens to unblock the exhaust path 231. At this time, the exhaust path 231 is connected to the heating chamber 100 and can extract gas from the heating chamber 100. Simultaneously, the first control valve closes and blocks the air supply path 221, so the air supply path 221 cannot supply gas to the heating chamber 100.

[0041] The second side processing component 3 is connected to the other side of the heating cavity 100, and the second side processing component 3 can be disposed opposite to the first side processing component 2. For example, the heating cavity 100 includes a first side and a second side opposite to each other, the first side processing component 2 is connected to the first side of the heating cavity 100, and the second side processing component 3 is connected to the second side of the heating cavity 100.

[0042] The second side processing component 3 is provided with a second gas flow path 31 communicating with the heating chamber 100. The second side processing component 3 can evacuate or supply gas to the heating chamber 100 through the second gas flow path 31. In this embodiment, the second side processing component 3 can specifically supply gas to the heating chamber 100 through the second gas flow path 31. The second side processing component 3 may be provided with a valve for controlling the opening and closing of the second gas flow path 31. This valve can act as a switching element, controlling the opening and closing of the second gas flow path 31 by controlling the valve in the second side processing component 3, thereby allowing the second side processing component 3 to supply gas to the heating chamber 100 or remain closed. Depending on the needs, only the gas supply component 22 of the first side processing component 2 can be used to supply gas to the heating chamber 100, or only the second side processing component 3 can be used to supply gas to the heating chamber 100, or both the gas supply component 22 of the first side processing component 2 and the second side processing component 3 can be used simultaneously to supply gas to the heating chamber 100.

[0043] Reference Figure 2 and Figure 5To ensure that the gas supply path 221 and the second gas flow path 31 can supply gas into the heating chamber 100, the gas supply path 221 and the second gas flow path 31 can be connected to gas supply components 32 respectively. The gas supply components 32 are used to supply gas towards the gas supply path 221 and the second gas flow path 31, and then the gas flows into the heating chamber 100 through the gas supply path 221 and the second gas flow path 31. To prevent the temperature difference between the gas flowing from the gas supply path 221 and the second gas flow path 31 into the heating chamber 100 and the interior of the heating chamber 100 from being too large, thereby reducing the uniformity of the temperature inside the heating chamber 100, a heater 311 and a temperature controller 312 can be respectively provided on the gas supply path 221 and the second gas flow path 31. The gases arriving in the supply gas path 221 and the second gas flow path 31 are heated by the heater 311 before flowing into the heating chamber 100. The heated gases can achieve a temperature similar to or the same as the internal temperature of the heating chamber 100, thus reducing the impact of the gases flowing into the heating chamber 100 on the temperature uniformity. The temperature controller 312 can detect the gas temperature and control the gas flow rate and / or the heater 311. Specifically, the temperature controller 312 can be located adjacent to the heater 311, and downstream of the heater 311 along the gas flow direction. After being heated by the heater 311, the gas flows through the temperature controller 312, which detects the gas temperature and compares it with a predetermined temperature, the required temperature for the gas flowing into the heating chamber 100. This predetermined temperature can be manually set based on the temperature inside the heating chamber 100. When the temperature controller 312 detects a difference between the gas temperature and the predetermined temperature, it can adjust the gas flow rate and / or the power of the heater 311 to regulate the gas temperature and ensure that the gas temperature flowing into the heating chamber 100 is the same as or close to the predetermined temperature.

[0044] Reference Figure 6 The gas supply component 32 may include a gas source 321, a connecting portion 322, and a second fast channel 323 and a second slow channel 324 for connecting the gas source 321 and the connecting portion 322. The gas source 321 may include a gas collecting block and a gas storage device (not shown) connected to the gas collecting block. The gas source 321 is connected to the second fast channel 323 and the second slow channel 324 via the gas collecting block. Gas in the gas storage device, after being collected by the gas collecting block, can be supplied to the second fast channel 323 or the second slow channel 324. Gas in the second fast channel 323 and the second slow channel 324 can flow to the connecting portion 322. The connecting portion 322 can be connected to the gas supply path 221 or the second gas flow path 31 via a pipe (not shown), so that the gas supply component 32 can supply gas to the gas supply path 221 or the second gas flow path 31.

[0045] The gas flow rates in the second fast channel 323 and the second slow channel 324 are different; specifically, the gas flow rate in the second fast channel 323 is greater than that in the second slow channel 324. The gas source 321 can be selectively connected to the connecting part 322 via either the second fast channel 323 or the second slow channel 324 to change the gas flow rate supplied to the supply gas path 221 and the second gas flow path 31. When the gas source 321 is connected to the connecting part 322 via the second fast channel 323, the gas supply component 32 supplies a larger flow rate to the supply gas path 221 and the second gas flow path 31; when the gas source 321 is connected to the connecting part 322 via the second slow channel 324, the gas supply component 32 supplies a smaller flow rate to the supply gas path 221 and the second gas flow path 31.

[0046] Valves can be installed on the second fast channel 323 and the second slow channel 324 to control the gas flow rate. These valves can function as switching devices. Specifically, a solenoid valve 3231 can be installed on the second fast channel 323, and the on / off state of the solenoid valve 3231 controls the on / off state of the second fast channel 323. The second slow channel 324 can be equipped with a solenoid valve 3231, a throttle valve 3241, and a pressure regulating valve 3242. The second slow channel 324 is controlled by the corresponding solenoid valve 3231, and the gas flow rate of the second slow channel 324 is limited by the throttle valve 3241 and the pressure regulating valve 3242, so that the gas flow rate of the second slow channel 324 is less than that of the second fast channel 323.

[0047] Reference Figures 1 to 4 A top processing component 1 is disposed at the top of the heating chamber 100, and the top processing component 1 is provided with a top gas flow path 11 communicating with the heating chamber 100. The top processing component 1 supplies gas to or extracts gas from the heating chamber 100 through the top gas flow path 11. Specifically, in this embodiment, the top processing component 1 can extract gas from the heating chamber 100 through the top gas flow path 11.

[0048] The top processing assembly 1 can be connected to an extraction component 12, which generates a negative pressure in the top gas flow path 11 of the top processing assembly 1, allowing the top gas flow path 11 to extract gas from the heating chamber 100. The top processing assembly 1 and the exhaust assembly 23 of the first side processing assembly 2 can share a single extraction component 12. Specifically, the top gas flow path 11 of the top processing assembly 1 and the exhaust flow path 231 of the exhaust assembly 23 can be connected to an exhaust manifold 4, allowing the gas in the top gas flow path 11 and the exhaust flow path 231 to converge within the exhaust manifold 4. The extraction component 12 is installed on the exhaust manifold 4, and is located downstream of the exhaust flow path 231 and the top gas flow path 11 along the gas flow direction, so that the extraction component 12 can generate suction in the top gas flow path 11 and the exhaust flow path 231.

[0049] To facilitate adjustment of the exhaust velocity, the exhaust manifold 4 can be connected to the top gas flow path 11 and the exhaust flow path 231 via parallel first fast channel 41 and first slow channel 42. Along the gas flow direction, the first fast channel 41 and first slow channel 42 are respectively located between the top gas flow path 11 and the exhaust flow path 231 and the exhaust manifold 4 to connect them, ensuring that the gas in the top gas flow path 11 and the exhaust flow path 231 flows towards the exhaust manifold 4 through either the first fast channel 41 or the first slow channel 42. By selecting one or both of the first fast channel 41 and the first slow channel 42 for unblocking, the gas flow can be controlled to go towards the first fast channel 41, the first slow channel 42, or both simultaneously.

[0050] The first fast channel 41 and the first slow channel 42 are each equipped with a valve to control the gas flow rate. This valve acts as a switching element, with the gas flow rate in the first fast channel 41 being greater than that in the first slow channel 42. When the first fast channel 41 is open and the first slow channel 42 is blocked, the gas in the top gas flow path 11 and the exhaust flow path 231 flows through the first fast channel 41 to the exhaust manifold 4, resulting in a larger exhaust flow rate and a faster exhaust speed. When the first fast channel 41 is blocked and the first slow channel 42 is open, the gas in the top gas flow path 11 and the exhaust flow path 231 flows through the first slow channel 42 to the exhaust manifold 4, resulting in a smaller exhaust flow rate and a slower exhaust speed. Alternatively, both the first fast channel 41 and the first slow channel 42 can be opened simultaneously, allowing the gas in the top gas flow path 11 and the exhaust flow path 231 to flow through both channels simultaneously to the exhaust manifold 4, further increasing the exhaust speed. The valves on the first fast channel 41 or the first slow channel 42 may include a seat valve 43 and a manual ball valve 44, respectively. Through the cooperation of the seat valve 43 and the manual ball valve 44, the opening and closing of the first fast channel 41 and the first slow channel 42 can be selectively controlled, and the gas flow rate of the first fast channel 41 can be controlled to be greater than the gas flow rate of the first slow channel 42.

[0051] Reference Figure 1 and Figure 2The heating chamber 100 can be provided in one or more ways. When multiple heating chambers 100 are provided, each heating chamber 100 can accommodate a substrate for annealing. A first gas flow path 21, a second gas flow path 31, and a top gas flow path 11 can be provided for each heating chamber 100. The heating chamber 100 receives and exhausts gas through the corresponding first gas flow path 21, second gas flow path 31, and top gas flow path 11, so that gas flows within the heating chamber 100 and carries away the evaporated material during the substrate annealing process.

[0052] When multiple gas supply paths 221 and 31 are provided for the first gas flow, multiple connection portions 322 of the gas supply component 32 can be provided. Each connection portion 322 can be connected to the gas supply path 221 and the second gas flow path 31 via a pipeline to supply gas to the gas supply path 221 and the second gas flow path 31. Each connection portion 322 can be provided with a corresponding second fast channel 323 and a second slow channel 324. The connection portion 322 is connected to the gas source 321 through the corresponding second fast channel 323 or the corresponding second slow channel 324 to change the gas supply speed of the gas supply path 221 and the second gas flow path 31 towards the corresponding heating chamber 100. One gas supply component 32 can supply gas to multiple heating chambers 100 simultaneously.

[0053] When multiple exhaust flow paths 231 are set in the top gas flow path 11 and the first gas flow path 21, the multiple top gas flow paths 11 and the multiple first gas flow paths 21 can be connected to the exhaust manifold 4 through the first fast channel 41 or the first slow channel 42 respectively, so that one extraction component 12 can extract gas from multiple heating chambers 100.

[0054] To improve the uniformity of gas flow during evacuation and exhaust in the heating chamber 100 and to ensure uniform gas flow near the substrate within the heating chamber 100, the first gas flow path 21, the second gas flow path 31, and the top gas flow path 11 are each provided with a flow equalization structure extending to one end of the heating chamber 100. This flow equalization structure can be used to improve gas uniformity.

[0055] Reference Figure 7Specifically, a three-stage flow distribution structure can be provided at the end where the first gas flow supply path 221 and the second gas flow path 31 connect to the heating chamber 100, respectively, as a flow equalization structure. The three-stage flow distribution structure includes a primary pipe flow distribution structure 223, a secondary orifice plate flow distribution structure 224, and a tertiary porous sintering plate flow distribution structure 225 arranged sequentially along the gas flow direction. The primary pipe flow distribution structure 223 includes multiple branch pipes, which are evenly distributed to provide gas to the heating chamber 100 at multiple points. The secondary orifice plate flow distribution structure 224 is provided with multiple evenly distributed holes, and the gas is forced to be rectified through the multiple holes of the secondary orifice plate flow distribution structure 224 to improve the uniformity of gas flow. The three-stage porous sintered plate flow distribution structure 225 is a plate-shaped structure made of porous metal sintered material. The three-stage porous sintered plate flow distribution structure 225 includes multiple tiny micropores. Gas passes through these tiny micropores through the three-stage porous sintered plate flow distribution structure 225 to further improve the uniformity of gas flow.

[0056] At the end of the exhaust flow path 231 in the top gas flow path 11 and the first gas flow path 21 that connects to the heating chamber 100, a multi-layer laminar plate structure can be respectively provided as a flow equalization structure. The multi-layer laminar plate structure includes multiple laminar plates arranged sequentially along the gas flow direction. Each laminar plate is provided with multiple uniform flow equalization holes, and the gas passes through multiple laminar plates to achieve multiple flow equalization. In the multiple laminar plates, the density of flow equalization holes on the laminar plates continuously increases along the direction close to the heating chamber 100 to ensure the uniformity of gas flow in the heating chamber 100. Alternatively, only the end of the top gas flow path 11 that connects to the heating chamber 100 can be provided with a multi-layer laminar plate structure, and the end of the exhaust flow path 231 that connects to the heating chamber 100 can be provided with a flow equalization structure similar to the first-stage pipeline diversion structure 223. The exhaust flow path 231 performs multi-point uniform gas extraction through multiple branch pipelines to improve the uniformity of gas flow in the heating chamber 100.

[0057] In use, the gas supply path 221 in the first side processing assembly 2 can be unblocked while the exhaust path 231 is blocked. Simultaneously, the second gas path 31 is blocked while the top gas path 11 is unblocked. In this case, air enters from the first side of the heating chamber 100 and exits from the top. Alternatively, the gas supply path 221 and the exhaust path 231 in the first side processing assembly 2 can be blocked, while the second gas path 31 and the top gas path 11 are unblocked. In this case, air enters from the second side of the heating chamber 100 and exits from the top. Or, the gas supply path 221 in the first side processing assembly 2 can be unblocked while the exhaust path 231 is blocked. Simultaneously, the second gas path 31 and the top gas path 11 are unblocked. In this case, air enters from both the first and second sides of the heating chamber 100 and exits from the top.

[0058] By changing the air inlet and outlet patterns of the heating chamber 100, different gas flow paths and directions can be formed within the heating chamber 100. When processing different substrates or requiring different testing, only the first side processing component 2, the second side processing component 3, and the top processing component 1 need to be adjusted. This allows a single heating chamber gas processing system to be suitable for the processing or testing needs of multiple different substrates, eliminating the need for multiple heating chambers 100 and corresponding air inlet and outlet systems, i.e., eliminating the need for multiple annealing devices. This effectively reduces costs and space requirements.

[0059] This invention also provides an annealing apparatus, including a heating chamber 100 and the aforementioned annealing system for the heating chamber 100. One or more heating chambers 100 may be provided, and each heating chamber 100 is used to house a substrate to be annealed. During the annealing process of the substrate, a gas flow can be formed at the substrate through the heating chamber gas treatment system to remove the evaporated material generated during annealing, thereby improving the annealing quality of the substrate.

[0060] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and alterations to the above embodiments within the scope of the present invention without departing from the principles and spirit of the present invention, and all such changes should fall within the protection scope of the claims of the present invention.

Claims

1. A gas handling system for a heating chamber, characterized in that, include: A first side processing component (2) is connected to the first side of the heating chamber (100), and the first side processing component (2) is provided with a first gas flow path (21) communicating with the heating chamber (100); The second side processing component (3) is connected to the second side of the heating chamber (100), and the second side processing component (3) is provided with a second gas flow path (31) communicating with the heating chamber (100); A top processing assembly (1) is provided on the top of the heating chamber (100), and the top processing assembly (1) is provided with a top gas flow path (11) communicating with the heating chamber (100); Among them, at least one of the first side processing component (2), the second side processing component (3), and the top processing component (1) is provided with a switching element, which is used to control the gas flow path of the corresponding processing component to supply or extract gas into the heating chamber (100).

2. The heating chamber gas handling system according to claim 1, characterized in that, The first side processing component (2) includes a gas supply component (22) and an exhaust component (23). The gas supply component (22) is provided with a gas supply path (221) communicating with the heating chamber (100), and the exhaust component (23) is provided with an exhaust path (231) communicating with the heating chamber (100). The gas supply path (221) and the exhaust path (231) are relatively independent. The first side processing component (2) is provided with a switching element, which includes a first control valve disposed in the supply airflow path (221) and a second control valve disposed in the exhaust airflow path (231). By controlling the opening and closing of the first control valve and the second control valve, the supply airflow path (221) and the exhaust airflow path (231) are connected or disconnected from the heating chamber (100).

3. The heating chamber gas handling system according to claim 2, characterized in that, The top processing assembly (1) and the exhaust assembly (23) are connected to an air extraction component (12), and the top gas flow path (11) and the exhaust assembly (23) extract air from the heating chamber (100) through the air extraction component (12); And / or, the second side processing component (3) and the gas supply component (22) are connected to a gas supply element (32), and the second gas flow path (31) and the gas supply component (22) supply gas to the heating chamber (100) through the gas supply element (32).

4. The heating chamber gas handling system according to claim 3, characterized in that, It also includes an exhaust manifold (4), which is connected to the exhaust flow path (231) and the top gas flow path (11) respectively. The suction device (12) is installed on the exhaust manifold (4) and is located downstream of the exhaust flow path (231) and the top gas flow path (11) along the gas flow direction. The suction device (12) is used to provide suction to the exhaust flow path (231) and the top gas flow path (11).

5. The heating chamber gas handling system according to claim 4, characterized in that, The exhaust manifold (4) is connected to the exhaust flow path (231) and the top gas flow path (11) via parallel first fast channel (41) or first slow channel (42). The exhaust flow path (231) and the top gas flow path (11) can be selectively connected to the suction device (12) via the first fast channel (41) or the first slow channel (42) to generate suction. The first fast channel (41) or the first slow channel (42) is respectively equipped with a valve to control the gas flow rate, and the gas flow rate in the first fast channel (41) is greater than the gas flow rate in the first slow channel (42).

6. The heating chamber gas handling system according to claim 3, characterized in that, A heater (311) and a temperature controller (312) are respectively provided on the gas supply path (221) and the second gas flow path (31). The heater (311) is used to heat the gas, and the temperature controller (312) is used to control the temperature of the gas supplied by the gas supply path (221) and the second gas flow path (31) to the heating chamber (100).

7. The heating chamber gas handling system according to claim 6, characterized in that, The gas supply component (32) includes a gas source (321), a connecting part (322), and a second fast channel (323) and a second slow channel (324) for connecting the gas source (321) and the connecting part (322); the connecting part (322) is used to connect to the gas supply path (221) and the second gas flow path (31) to supply gas; the second fast channel (323) or the second slow channel (324) is respectively provided with a valve to control the gas flow rate; the gas flow rate in the second fast channel (323) is greater than the gas flow rate in the second slow channel (324); The gas source (321) can be selectively connected to the connecting part (322) via the second fast channel (323) or the second slow channel (324).

8. The heating chamber gas handling system according to claim 1, characterized in that, The heating chamber (100) is provided in multiple ways, and the first gas flow path (21), the second gas flow path (31), and the top gas flow path (11) are provided in multiple ways and are respectively connected to the multiple heating chambers (100).

9. The heating chamber gas handling system according to claim 1, characterized in that, The first gas flow path (21), the second gas flow path (31), and the top gas flow path (11) are each provided with a flow equalization structure at one end extending to the heating chamber (100). The flow equalization structure is used to improve gas uniformity.

10. An annealing apparatus, characterized in that, It includes a heating chamber (100) and a heating chamber gas handling system as described in any one of claims 1 to 9; the heating chamber (100) is used to house a substrate to be annealed, and the heating chamber gas handling system is used to create gas flow at the substrate.