Wafer surface object measuring apparatus

Abstract

The present disclosure provides a wafer surface object measuring device, comprising a rack, a vibration isolation device arranged on the rack, a base fixedly arranged on the top of the vibration isolation device, a wafer stage movably arranged on the base for placing a wafer, a moving mechanism installed on the base and connected with the wafer stage for driving the wafer stage to move in a coordinate plane, a white light interference mirror group movably arranged on the base and facing the wafer stage, and a lifting mechanism connected with the white light interference mirror group for driving the white light interference mirror group to move in a direction perpendicular to the coordinate plane.

Description

Technical Field

[0001] This disclosure relates to a measuring device for wafer surface objects, belonging to the field of semiconductor manufacturing. Background Technology

[0002] In high-precision industrial fields such as semiconductor manufacturing, accurate measurement of objects on the wafer surface is crucial. Precise acquisition of parameters such as wafer surface morphology, film thickness, and the dimensions of microstructures directly affects device performance, yield, and the optimization of subsequent processes.

[0003] Traditional monochromatic interferometry is an important non-contact optical measurement technique. Its basic principle is based on the interference phenomenon of light. When a beam of monochromatic light shines on a wafer surface, it is reflected, and the reflected light interferes with the reference light to form interference fringes. By analyzing these interference fringes, the height information of the wafer surface can be obtained. Ideally, the phase change of the interference fringes is linearly related to the change in wafer surface height; that is, each fixed phase change corresponds to a specific height change. However, in practical measurements, monochromatic interferometry suffers from phase ambiguity.

[0004] Meanwhile, existing wafer surface measurements, employing traditional monochromatic interferometry and other common optical measurement methods, are susceptible to vibration interference. These vibrations are transmitted to the measurement equipment via the rack, causing minute changes in the measurement optical path, which can easily affect the interference signal. Because interferometry is sensitive to changes in optical path difference, vibration-induced changes in the optical path can cause the interference fringes to shift or deform, thus leading to deviations in the measured phase information.

[0005] In summary, traditional monochromatic interferometry suffers from phase ambiguity and is susceptible to environmental vibrations. Therefore, it is of great significance to provide a wafer surface object measurement device that can overcome these problems and achieve high-precision and high-stability measurements. Utility Model Content

[0006] This disclosure provides a measuring device for objects on the surface of a wafer.

[0007] According to one aspect of this disclosure, a measuring device for a wafer surface object is provided, comprising: a frame; a vibration isolation device disposed on the frame; a base fixedly disposed on the top of the vibration isolation device; a wafer stage movably disposed on the base for placing a wafer; a moving mechanism mounted on the base and connected to the wafer stage for driving the wafer stage to move in a coordinate plane; a white light interferometer group movably and vertically disposed on the base and facing the wafer stage; and a lifting mechanism connected to the white light interferometer group for driving the white light interferometer group to move in a direction perpendicular to the coordinate plane.

[0008] According to one aspect of the technical solution of this disclosure, the measuring device effectively reduces the interference of environmental vibration on the measuring device by setting a vibration isolation device, thereby improving the stability of the measurement; the wafer stage is driven to move in the coordinate plane by a moving mechanism, and the white light interferometer group is driven to move vertically by a lifting mechanism, thereby realizing the accurate measurement of different positions on the wafer surface; the white light interferometer group utilizes the principle of white light interference to overcome the phase ambiguity problem in traditional monochromatic light interferometry, thereby improving the accuracy of the measurement. This solves the problem that traditional monochromatic light interferometry faces many difficulties when measuring wafer surfaces with large height variations due to the phase ambiguity problem and the susceptibility of existing measurement methods to environmental vibration.

[0009] A measuring apparatus for wafer surface objects according to at least one embodiment of the present disclosure, wherein the white light interferometer group is provided with a light source, and the light source is a broadband light source.

[0010] In the technical solution of this embodiment, a broadband light source is used as the light source for the white light interferometer array. Based on the short coherence characteristics of the broadband light source, the 3D model of the wafer surface can be constructed more accurately through vertical scanning interferometry, thereby improving the measurement accuracy and resolution.

[0011] According to at least one embodiment of the present disclosure, the measuring apparatus for wafer surface objects, wherein the vibration isolation device is an air-bearing vibration isolator.

[0012] In the technical solution of this embodiment, the air-bearing vibration isolator has a good vibration isolation effect, which can further reduce the interference of environmental vibration on the measuring equipment and improve the stability and accuracy of the measurement.

[0013] A measuring apparatus for a wafer surface object according to at least one embodiment of the present disclosure, the measuring apparatus further comprising a level detection device disposed on the rack, the level detection device being configured to detect the height and levelness of the base.

[0014] In the technical solution of this embodiment, the level detection device can detect the height and levelness of the base in real time, ensuring the stability and accuracy of the measuring equipment during the measurement process and avoiding measurement errors caused by base tilt or height changes.

[0015] According to at least one embodiment of the present disclosure, a measuring device for wafer surface objects includes at least four photoelectric sensors fixedly mounted on the frame, and photoelectric sensing sheets disposed one-to-one with each of the photoelectric sensors, the photoelectric sensing sheets being disposed at the bottom of the base.

[0016] In the technical solution of this embodiment, the combination of multiple photoelectric sensors and photoelectric induction sheets can more accurately detect the height and level of the base, thereby improving the accuracy and reliability of the measurement.

[0017] A measuring apparatus for a wafer surface object according to at least one embodiment of the present disclosure, wherein the moving mechanism includes: an X-axis moving mechanism disposed on the base; and a Y-axis moving mechanism disposed on the X-axis moving mechanism and connected to the wafer stage; wherein the X-axis moving mechanism is configured to drive the wafer stage to move along the X-axis direction, and the Y-axis moving mechanism is configured to drive the wafer stage to move along the Y-axis direction, wherein the X-axis direction is perpendicular to the Y-axis direction.

[0018] In the technical solution of this embodiment, the cooperation of the X-axis moving mechanism and the Y-axis moving mechanism enables precise movement of the wafer stage in the coordinate plane, thereby achieving precise measurement of different positions on the wafer surface.

[0019] A measuring device for a wafer surface object according to at least one embodiment of the present disclosure, wherein a groove extending along the X-axis direction is provided in the middle of the base, and the X-axis moving mechanism is disposed in the groove.

[0020] In the technical solution of this embodiment, the X-axis moving mechanism is set in the groove of the base, which can save space, make the structure of the measuring device more compact, and also help improve the stability and accuracy of the X-axis moving mechanism.

[0021] A measuring apparatus for a wafer surface object according to at least one embodiment of the present disclosure, wherein a linear guide assembly is provided between the X-axis moving mechanism and the Y-axis moving mechanism, and between the Y-axis moving mechanism and the wafer stage.

[0022] In the technical solution of this embodiment, the linear guide rail assembly can reduce friction and resistance during movement, improve the smoothness and accuracy of movement, thereby ensuring the stability and accuracy of the wafer stage during movement.

[0023] A measuring apparatus for a wafer surface object according to at least one embodiment of the present disclosure, wherein the base is a marble base.

[0024] In the technical solution of this embodiment, the marble base has good stability and seismic performance, which can further reduce the interference of environmental vibration on the measuring equipment and improve the stability and accuracy of the measurement.

[0025] A measuring apparatus for a wafer surface object according to at least one embodiment of the present disclosure, wherein the white light interferometer array constructs a 3D model of the wafer surface using vertical scanning interferometry based on the short coherence characteristics of a broadband light source.

[0026] In the technical solution of this embodiment, the white light interferometer group utilizes the short coherence characteristics of a broadband light source and can accurately obtain the height information of the wafer surface through vertical scanning interferometry, thereby constructing a high-precision 3D model to support the quality inspection and analysis of the wafer surface. Attached Figure Description

[0027] The accompanying drawings illustrate exemplary embodiments of the present disclosure and, together with the description thereof, serve to explain the principles of the present disclosure. These drawings are included to provide a further understanding of the present disclosure and are incorporated in and constitute a part of this specification.

[0028] Figure 1 This is a schematic diagram of the structure of a measuring device for a wafer surface object according to one embodiment of the present disclosure.

[0029] Figure 2 This is a front view of a measuring apparatus for a wafer surface object according to one embodiment of the present disclosure.

[0030] Figure 3 This is a side view of a measuring apparatus for a wafer surface object according to one embodiment of the present disclosure.

[0031] Figure 4 This is a top view of a measuring apparatus for a wafer surface object according to one embodiment of the present disclosure.

[0032] The specific labels in the attached figures are as follows: 100 racks 200 Vibration Isolation Device 210 Air-float vibration isolator 300 base 310 Groove 320 Marble Base 400 wafer stage 500 mobile agencies 510 X-axis moving mechanism 520 Y-axis moving mechanism 530 Linear Guide Assembly 600 White Light Interferometer Group 700 Lifting Mechanism 800 level detection device 810 photoelectric sensor 820 photoelectric sensor Detailed Implementation The present disclosure will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the scope of the disclosure. Furthermore, it should be noted that, for ease of description, only the parts relevant to the present disclosure are shown in the accompanying drawings.

[0033] It should be noted that, where there is no conflict, the embodiments and features described in this disclosure can be combined with each other. The technical solutions of this disclosure will now be described in detail with reference to the accompanying drawings and embodiments.

[0034] Unless otherwise stated, the exemplary implementations / embodiments shown are to be understood as providing exemplary features of various details that provide ways in which the technical concepts of this disclosure can be implemented in practice. Therefore, unless otherwise stated, the features of various implementations / embodiments may be additionally combined, separated, interchanged and / or rearranged without departing from the technical concepts of this disclosure.

[0035] Traditional monochromatic interferometry faces numerous difficulties when measuring wafer surfaces with significant height variations due to phase ambiguity and the susceptibility of existing measurement methods to environmental vibrations.

[0036] To address the aforementioned technical problems, this embodiment provides a measuring device for objects on the surface of a wafer.

[0037] Figure 1 This is a schematic diagram of the structure of a measuring device for a wafer surface object according to one embodiment of the present disclosure. Figure 2 This is a front view of a measuring apparatus for a wafer surface object according to one embodiment of the present disclosure. Figure 3 This is a side view of a measuring apparatus for a wafer surface object according to one embodiment of the present disclosure. Figure 4 This is a top view of a measuring apparatus for a wafer surface object according to one embodiment of the present disclosure.

[0038] like Figures 1 to 4 As shown, the measuring device for wafer surface objects provided in this embodiment includes a frame 100, a vibration isolation device 200, a base 300, a wafer stage 400, a moving mechanism 500, a white light interferometer group 600, and a lifting mechanism 700.

[0039] The device isolates external vibration interference through a composite structure of vibration isolation device 200 and marble base 320, solves the phase ambiguity problem by combining white light interferometer group 600 with vertical scanning interferometry, and realizes full-area measurement of the wafer surface by using a planar moving mechanism.

[0040] Specifically, the vibration isolation device 200 is mounted on the frame 100. The base 300 is fixedly mounted on top of the vibration isolation device 200. The wafer stage 400 is movably mounted on the base 300 for placing wafers. The moving mechanism 500 is mounted on the base 300 and connected to the wafer stage 400, for driving the wafer stage 400 to move in a coordinate plane. The white light interferometer assembly 600 is vertically and movably mounted on the base 300 and oriented towards the wafer stage 400. The lifting mechanism 700 is connected to the white light interferometer assembly 600, for driving the white light interferometer assembly 600 to move in a direction perpendicular to the coordinate plane.

[0041] The above technical solution uses a vibration isolation device 200 to flexibly connect the base 300 and the frame 100, effectively suppressing the transmission of external vibrations to the base 300, reducing the impact of external factors on the measurement, and ensuring the accuracy of the measurement equipment. The white light interferometer group 600 uses a broadband light source and leverages its short coherence characteristics to acquire the envelope peak of the interference signal during vertical scanning, thus breaking through the phase period limitation of traditional monochromatic light interferometry. The moving mechanism 500 achieves planar scanning of the wafer stage 400 through X / Y axis linkage, and, in conjunction with the vertical movement of the white light interferometer group 600, completes the three-dimensional topography reconstruction. This technical solution overcomes the phase ambiguity problem in traditional monochromatic light interferometry, improves measurement accuracy, and solves the problem of unreliable measurement results due to phase ambiguity and susceptibility to environmental vibration in traditional monochromatic light interferometry.

[0042] The principle behind the white light interference phenomenon described above is as follows: White light interference is an interference phenomenon caused by the short coherence characteristics of a broadband light source (such as white light). Its core mechanism is as follows: Coherence condition: The coherence length of white light is extremely short (usually a few micrometers). Obvious interference fringes are only produced when the optical path difference between the two beams (reference light and sample reflected light) is close to zero. This characteristic causes the interference signal to appear only in the local region where the optical path difference is matched. Interference signal characteristics: The contrast (i.e., intensity modulation) of the interference fringes reaches its maximum value when the optical path difference is zero and decays rapidly as the optical path difference increases. The envelope of the interference signal exhibits a bell-shaped curve (such as a Gaussian curve), with its peak position corresponding to the point where the optical path difference is zero.

[0043] The aforementioned white light interferometer assembly 600 can use existing white light interferometers or systems. For example, a white light interferometer achieves high-precision measurement of the three-dimensional topography of a surface through the principle of interference. Its key components include a light source, a beam splitting system, an interferometer objective, a vertical scanning device, and an imaging module. The interferometer objective is the core optical component; it integrates a beam splitter prism and a reference mirror, splitting the illumination light into a reference beam and a test beam, and achieving optical path matching within the objective to ultimately realize two-beam interference. This design gives the interferometer objective itself a microscopic magnification function, allowing direct imaging of the sample under test. From a system composition perspective, the optical imaging system of a white light interferometer typically employs an infinity-point design, consisting of an interferometer objective and an imaging eyepiece (or tube lens). The interferometer objective is responsible for forming the intermediate image of the sample under test, while the imaging eyepiece further magnifies the intermediate image and projects it onto a detector such as a CCD camera.

[0044] In one embodiment of the aforementioned white light interferometer group 600, a broadband light source is provided. This broadband light source has a wide spectral bandwidth, and the envelope width of the interference signal it generates is much smaller than the coherence length of monochromatic light interference. This characteristic allows the interference signal intensity to exhibit a single peak characteristic as the optical path difference changes during vertical scanning, avoiding phase ambiguity caused by multi-period phase demodulation, thereby improving measurement accuracy and resolution. In other words, the short coherence characteristic of the broadband light source allows the system to directly determine the absolute height value by locating the envelope peak when acquiring surface topography. Compared to traditional techniques, this solution eliminates phase period limitations through physical characteristics while reducing the impact of vibration-induced phase noise on the measurement results.

[0045] like Figure 1 and Figure 2 As shown, exemplarily, the vibration isolation device 200 employs an air-floating vibration isolator 210. The air-floating vibration isolator 210 forms an air film by introducing compressed air into the isolation cavity, suspending the base 300 above the frame 100. The air-floating vibration isolator 210 has a low natural frequency, significantly attenuating high-frequency vibrations. The air-floating vibration isolator 210 reduces the transmission path of external vibrations to the base 300 through a passive vibration isolation mechanism. When a stable air film is formed within the isolation cavity, a flexible support is created between the base 300 and the frame 100, thereby isolating vibration interference transmitted through the frame 100. This vibration isolation method provides a stable physical environment for high-precision optical measurements.

[0046] like Figure 3As shown, to ensure the stability and accuracy of the measuring equipment during the measurement process and to avoid measurement errors caused by the tilt or height change of the base 300, a level detection device 800 is installed on the frame 100. The level detection device 800 includes at least four photoelectric sensors 810 fixedly mounted on the frame 100, and photoelectric sensing plates 820 paired with each photoelectric sensor 810, with the photoelectric sensing plates 820 located at the bottom of the base 300. During the measurement process, the photoelectric sensors 810 detect the position information of the photoelectric sensing plates 820 in real time, thereby acquiring the height and levelness data of the base 300. If a change in the height or levelness of the base 300 is detected, the measurement system can make timely adjustments or prompt the operator to handle the situation, ensuring the reliability of the measurement results. By detecting changes in the distance between the sensing plates and the sensors, the attitude information of the base 300 can be acquired in real time. The detection pair composed of the photoelectric sensors 810 and the sensing plates forms a non-contact displacement monitoring system. When the base 300 tilts due to environmental disturbances, the change in the distance between each detection point can reflect the levelness of the base 300. By adjusting the parameters of the vibration isolation device 200 through the feedback control mechanism, the initial installation state of the base 300 can be maintained, thereby ensuring the stability of the measurement system.

[0047] like Figure 1 and Figure 3 As shown, in one embodiment of the aforementioned moving mechanism 500, the moving mechanism 500 comprises an X-axis moving mechanism 510 and a Y-axis moving mechanism 520. The X-axis moving mechanism 510 and the Y-axis moving mechanism 520 can be existing linear motor drive modules. A groove 310 extending along the X-axis direction is provided in the middle of the base 300, and the X-axis moving mechanism 510 is disposed within this groove 310. This design saves space, makes the measuring device structure more compact, and improves the stability of the X-axis moving mechanism 510.

[0048] The Y-axis moving mechanism 520 is mounted on the X-axis moving mechanism 510 and connected to the wafer stage 400. Linear guide rail assemblies 530 are provided between the X-axis moving mechanism 510 and the Y-axis moving mechanism 520, and between the Y-axis moving mechanism 520 and the wafer stage 400. The linear guide rail assembly 530 reduces friction and resistance during movement, making the X-axis moving mechanism 510 and the Y-axis moving mechanism 520 more stable when driving the wafer stage 400, thus improving the accuracy of movement.

[0049] The X-axis moving mechanism 510 is configured to drive the wafer stage 400 to move along the X-axis direction, and the Y-axis moving mechanism 520 is configured to drive the wafer stage 400 to move along the Y-axis direction, with the X-axis direction perpendicular to the Y-axis direction. Through the cooperation of the X-axis moving mechanism 510 and the Y-axis moving mechanism 520, precise movement of the wafer stage 400 within the coordinate plane can be achieved, thereby enabling measurement of different positions on the wafer surface.

[0050] The wafer stage 400 is movably mounted on the base 300 for placing the wafer to be measured. In actual operation, the wafer is placed stably on the wafer stage 400 to ensure accurate wafer positioning for subsequent precise measurements.

[0051] For example, the base 300 is made of marble. The high density of the marble base 320 enhances the system's vibration resistance, and its low coefficient of thermal expansion reduces structural deformation caused by temperature fluctuations. This material property, combined with the vibration isolation device 200, further strengthens the overall environmental adaptability of the system.

[0052] For example, the white light interferometer group 600 constructs a 3D model based on vertical scanning interferometry. This technique involves driving the interferometer group to move vertically and acquiring a sequence of interference signal intensity at the critical point where the optical path difference equals zero. The system determines the surface height information by the position of the peak value of the interference signal envelope, without relying on the assumption of phase continuity. This measurement method avoids the phase ambiguity problem of traditional monochromatic light interferometry from a physical perspective, while reducing the influence of phase fluctuations caused by vibration on the measurement results.

[0053] For example, the lifting mechanism 700 is a linear motor drive mechanism or other lifting module mounted on a base bracket.

[0054] In actual measurement, the wafer is first placed on the wafer stage 400. The measurement equipment is then started, and the X-axis movement mechanism 510 and Y-axis movement mechanism 520 work together to move the wafer stage 400 to the initial measurement position. Then, the lifting mechanism 700 drives the white light interferometer group 600 to descend to a suitable height, enabling it to measure the wafer surface. The white light interferometer group 600 uses light emitted from a broadband light source to illuminate the wafer surface; the reflected light interferes with the reference light to form an interference signal. Through vertical scanning interferometry, the interference signal is analyzed and processed to obtain the height information of the wafer surface and construct a 3D model of the wafer surface. During the measurement process, the horizontal detection device 800 continuously monitors the height and levelness of the base 300 in real time. If a change in the state of the base 300 is detected, the measurement system will correct the measurement data according to a preset algorithm, or stop the measurement and prompt the operator to check the equipment status.

[0055] Specifically, the measurement method for measuring objects on the surface of a wafer using the aforementioned measuring equipment includes the following steps: Step 1: Equipment Initialization and Calibration. Activate the air-bearing vibration isolator 210 to bring the equipment into a stable vibration-isolated state, thereby eliminating vibration interference. Then, turn on the light source of the white light interferometer assembly 600.

[0056] Step 2: Establishing the wafer coordinate system. Feature point capture: Place the wafer to be tested on the wafer stage 400 and fix it; move the wafer to the center of the field of view of the white light interferometer 600 through the moving mechanism 500; identify several feature points on the wafer surface within the field of view of the mirror group, record their pixel coordinates, and establish a wafer surface coordinate map.

[0057] Step 3: Target Point Interference Image Acquisition. Locating the target measurement point: Based on the measurement coordinates set in the work order, the moving mechanism 500 drives the wafer stage 400 to precisely move the target point to the center of the mirror assembly's field of view. Subsequently, the mirror assembly measures the height or width of each target micro-object and saves the data.

[0058] Step 4: 3D Model Construction. The 3D model construction based on white light interferometry is achieved through vertical scanning interferometry (VSI) technology, and the steps are as follows: Vertical scanning: The sample or reference mirror moves step by step along the vertical direction (Z-axis), while recording a two-dimensional interference image (XY plane) at each position; Signal acquisition: For each measurement pixel, a signal sequence in which the interference intensity varies with the Z-axis position is obtained during the scanning process; Peak detection: The Z-axis position with the maximum contrast of the interference signal at each pixel is determined by an algorithm (such as envelope detection or Fourier transform). This position corresponds to the relative height of the sample surface at that point. Data integration: The height information of all pixels is integrated into a three-dimensional coordinate dataset to form a 3D morphology model of the sample surface.

[0059] Step 5: Measure the height and width of the steps using a 3D model. The measurement principle is as follows: Height difference extraction: In the 3D model, select the top and bottom areas of the steps and calculate their corresponding height values ​​(i.e., the Z coordinate of the peak position); Difference calculation: The step height is the difference between the two height values, i.e., H = Ztop - Zbottom; Length and width calculation: The 3D model is converted into a depth map. By measuring the difference between pixels, the outline of the raised step can be obtained, and thus the length and width of the step can be measured.

[0060] In the description of this specification, the references to terms such as "one embodiment / mode," "some embodiments / modes," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment / mode or example is included in at least one embodiment / mode or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment / mode or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments / modes or examples. Furthermore, without contradiction, those skilled in the art can combine and integrate the different embodiments / modes or examples described in this specification, as well as the features of different embodiments / modes or examples.

[0061] Those skilled in the art should understand that the above embodiments are merely for illustrating the present disclosure and are not intended to limit the scope of the disclosure. Those skilled in the art can make other changes or modifications based on the above disclosure, and these changes or modifications still fall within the scope of the present disclosure.

Claims

1. A measuring device for objects on the surface of a wafer, characterized in that, include: frame; Vibration isolation device, wherein the vibration isolation device is mounted on the frame; The base is fixedly mounted on the top of the vibration isolation device; A wafer stage, which is movably disposed on the base for placing a wafer; A moving mechanism, which is mounted on the base and connected to the wafer stage, is used to drive the wafer stage to move in a coordinate plane; The white light interference mirror assembly is movably and vertically mounted on the base and oriented toward the wafer stage; as well as The lifting mechanism connected to the white light interferometer group is used to drive the white light interferometer group to move in a direction perpendicular to the coordinate plane.

2. The measuring device for wafer surface objects according to claim 1, characterized in that, The white light interferometer array is equipped with a light source, which is a broadband light source.

3. The measuring device for wafer surface objects according to claim 1, characterized in that, The vibration isolation device is an air-floating vibration isolator.

4. The measuring device for wafer surface objects according to claim 3, characterized in that, The measuring device also includes a level detection device disposed on the frame, the level detection device being configured to detect the height and levelness of the base.

5. The measuring device for wafer surface objects according to claim 4, characterized in that, The horizontal detection device includes at least four photoelectric sensors fixedly mounted on the frame, and photoelectric sensing plates arranged one-to-one with each of the photoelectric sensors, the photoelectric sensing plates being disposed at the bottom of the base.

6. The measuring device for wafer surface objects according to claim 1, characterized in that, The mobile mechanism includes: An X-axis moving mechanism is mounted on the base; The Y-axis moving mechanism is mounted on the X-axis moving mechanism and connected to the wafer stage; The X-axis moving mechanism is configured to drive the wafer stage to move along the X-axis direction, and the Y-axis moving mechanism is configured to drive the wafer stage to move along the Y-axis direction, wherein the X-axis direction is perpendicular to the Y-axis direction.

7. The measuring device for wafer surface objects according to claim 6, characterized in that, The base has a groove extending along the X-axis in the middle, and the X-axis moving mechanism is disposed in the groove.

8. The measuring device for wafer surface objects according to claim 6, characterized in that, Linear guide rail assemblies are provided between the X-axis moving mechanism and the Y-axis moving mechanism, and between the Y-axis moving mechanism and the wafer stage.

9. The measuring device for wafer surface objects according to claim 1, characterized in that, The base is a marble base.

10. The measuring device for wafer surface objects according to claim 1, characterized in that, The white light interferometer array is based on the short coherence characteristics of a broadband light source and constructs a 3D model of the wafer surface using vertical scanning interferometry.

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