A composite narrow-band filter and excimer nanometer instrument

Abstract

The utility model relates to the technical field of filter structure discloses a kind of composite narrowband optical filter and excimer nanometer instrument, including quartz glass substrate;First transparent buffer flat layer and alternate deposition layer are sequentially arranged on the quartz glass substrate, the alternate deposition layer includes alternately deposited first Al2O3 deposition layer and low refractive index deposition layer, and the refractive index of the first Al2O3 deposition layer is greater than the refractive index of the low refractive index deposition layer;The low refractive index deposition layer is first Si O2 deposition layer or HfO2 deposition layer.The composite narrowband optical filter of the utility model can make more about 222 nanometer wave light pass through the composite narrowband optical filter.

Description

Technical Field

[0001] This utility model relates to the field of filter structure technology, and in particular to a composite narrowband filter and an excimer nanometer. Background Technology

[0002] An optical filter is an optical device that separates monochromatic light of a specific wavelength from composite light, and it is widely used in various optoelectronic industries. An optical filter is made by depositing a dielectric metal film on a transparent substrate. It utilizes the interference effect of the dielectric metal film to select light of a specific wavelength from the incident light, allowing it to pass through the filter. Depending on the needs of different applications, different bandpass filters often require different bandpass wavelengths, which necessitates depositing dielectric metal films of varying thicknesses on one side of the transparent substrate.

[0003] Currently, 222 nm wavelength disinfection technology, due to its unique safety for humans and bactericidal effectiveness, can eliminate pathogenic microorganisms in the environment without affecting or interfering with people's work and life. However, ultraviolet lamps typically emit light with a wide wavelength range during illumination. Ordinary filters consist of a glass substrate and an Al2O3 film on the glass substrate. On the one hand, the surface flatness of the glass substrate is poor, which can easily cause unevenness in the Al2O3 film, affecting the actual filtering effect. On the other hand, a simple Al2O3 film has poor transmittance at approximately 222 nm wavelengths, which also affects the actual disinfection effect.

[0004] Therefore, it is necessary to design a composite narrowband filter and an excimer nanometer to allow more light of approximately 222 nanometer wavelengths to pass through the composite narrowband filter.

[0005] The above information is provided as background information only to aid in understanding this disclosure and does not constitute an assertion or admission that any of the above content can be used as prior art relative to this disclosure. Utility Model Content

[0006] This invention provides a composite narrowband filter and an excimer nanometer, which allows more light of approximately 222 nanometer wavelength to pass through the composite narrowband filter.

[0007] To achieve the above objectives, this utility model provides the following technical solution:

[0008] A composite narrowband filter, comprising a quartz glass substrate;

[0009] The quartz glass substrate is sequentially provided with a first transparent buffer planarization layer and an alternating deposition layer. The alternating deposition layer includes an alternating first Al2O3 deposition layer and a low refractive index deposition layer, and the refractive index of the first Al2O3 deposition layer is greater than the refractive index of the low refractive index deposition layer.

[0010] The low-refractive-index deposition layer is either a first SiO2 deposition layer or an HfO2 deposition layer.

[0011] Optionally, the thickness of the first Al2O3 deposition layer ranges from 20nm to 50nm; the thickness of the first SiO2 layer or HfO2 deposition layer ranges from 30nm to 70nm.

[0012] Optionally, the thickness of the first Al2O3 deposition layer is 34.2 nm, and the thickness of the first SiO2 layer is 47.8 nm.

[0013] Optionally, the composite narrowband filter also includes a second Al2O3 deposition layer;

[0014] The second Al2O3 deposition layer is disposed on the alternating deposition layer, and the thickness of the second Al2O3 deposition layer is the same as the thickness of the first Al2O3 deposition layer.

[0015] Optionally, the first transparent buffer planarization layer is an electron beam sputtered SiO2 layer, and the thickness of the electron beam sputtered SiO2 layer is no more than 30 nm.

[0016] Optionally, the thickness of the electron beam sputtered SiO2 layer is 20 nm.

[0017] Optionally, the composite narrowband filter also includes a second transparent buffer planarization layer and an aluminum reflective layer;

[0018] The second transparent buffer leveling layer and the aluminum reflective layer are sequentially stacked on the alternating deposition layers.

[0019] Optionally, the second transparent buffer planarization layer is a magnetron sputtered SiO2 layer with a thickness of no more than 40 nm, and the aluminum reflective layer has a thickness of no more than 100 nm.

[0020] Optionally, the thickness of the magnetron sputtered SiO2 layer is 30 nm, and the thickness of the aluminum reflective layer is 80 nm.

[0021] Optionally, the composite narrowband filter also includes a SiO2 protective layer deposited on the aluminum reflective layer by plasma-enhanced chemical vapor deposition;

[0022] The thickness of the SiO2 protective layer is not less than 100 nm.

[0023] An excimer nanometer includes a composite narrowband filter as described in any of the preceding claims.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] The present invention provides a composite narrowband filter and excimer nanometer by constructing a first transparent buffer flat layer on one side of a quartz glass substrate, and then alternately depositing a first Al2O3 deposition layer and a low refractive index deposition layer on the first transparent buffer flat layer. Since the first transparent buffer flat layer forms a smoother and flatter surface, the deposition effect of the alternating deposition layer is better. The alternating arrangement of the first Al2O3 deposition layer and the low refractive index deposition layer can effectively enhance the transmittance, increasing the transmittance of about 222 nanometer waves.

[0026] This invention has other features and advantages that will be apparent from or will be set forth in detail in the accompanying drawings and the following detailed description, which together serve to explain the particular principles of this invention. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 This is a schematic diagram of the layered structure of the composite narrowband filter provided in this embodiment of the present invention;

[0029] Figure 2 This is a schematic cross-sectional view of the composite narrowband filter provided in this embodiment of the present invention;

[0030] Figure 3 This is an exploded view of the excimer nanometer provided in this embodiment of the present invention.

[0031] Reference numerals: 1. Quartz glass substrate; 2. First transparent buffer flattening layer; 31. First Al2O3 deposition layer; 32. Low refractive index deposition layer; 4. Second Al2O3 deposition layer; 5. Second transparent buffer flattening layer; 6. Aluminum reflective layer; 7. SiO2 protective layer; 8. Excimer nanometer; 81. Lamp tube; 82. Support frame. Detailed Implementation

[0032] To illustrate the possible application scenarios, technical principles, implementable specific solutions, and achievable objectives and effects of this application in detail, the following description, in conjunction with the listed specific embodiments and accompanying drawings, provides a detailed explanation. The embodiments described herein are merely illustrative of the technical solutions of this application and are therefore intended to limit the scope of protection of this application.

[0033] In this document, the term "embodiment" means that a specific feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The term "embodiment" appearing in various places throughout the specification does not necessarily refer to the same embodiment, nor does it specifically limit its independence or connection with other embodiments. In principle, in this application, as long as there are no technical contradictions or conflicts, the technical features mentioned in each embodiment can be combined in any way to form corresponding implementable technical solutions.

[0034] Unless otherwise defined, the technical terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the use of related terms herein is merely for the purpose of describing particular embodiments and is not intended to limit this application.

[0035] In the description of this application, the term "and / or" is used to describe the logical relationship between objects, indicating that three relationships can exist. For example, A and / or B means: A exists, B exists, and A and B exist simultaneously. Additionally, the character " / " in this document generally indicates that the preceding and following objects have an "or" logical relationship.

[0036] In this application, terms such as “first” and “second” are used only to distinguish one entity or operation from another, and do not necessarily require or imply any actual quantity, hierarchy or order relationship between these entities or operations.

[0037] Unless otherwise specified, the use of terms such as “comprising,” “including,” “having,” or other similar expressions in this application is intended to cover non-exclusive inclusion, which does not exclude the presence of additional elements in a process, method, or product that includes the stated elements, such that a process, method, or product that includes a list of elements may include not only those defined elements but also other elements not expressly listed, or elements inherent to such a process, method, or product.

[0038] Similar to the understanding in the Examination Guidelines, in this application, expressions such as "greater than," "less than," and "exceeding" are understood to exclude the stated number; expressions such as "above," "below," and "within" are understood to include the stated number. Furthermore, in the description of the embodiments in this application, "multiple" means two or more (including two), and similar expressions related to "multiple" are also understood in this way, such as "multiple groups" and "multiple times," unless otherwise explicitly specified.

[0039] In the description of the embodiments of this application, the space-related expressions used, such as "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "vertical," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential," indicate the orientation or positional relationship based on the orientation or positional relationship shown in the specific embodiments or drawings. They are only for the purpose of describing the specific embodiments of this application or for the reader's understanding, and do not indicate or imply that the device or component referred to must have a specific position, a specific orientation, or be constructed or operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application.

[0040] Unless otherwise expressly specified or limited, the terms "installation," "connection," "linking," "fixing," and "setting," as used in the description of the embodiments of this application, should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral setting; it can be a mechanical connection, an electrical connection, or a communication connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two components or the interaction between two components. For those skilled in the art to which this application pertains, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.

[0041] Example 1

[0042] In view of the aforementioned defects in existing composite narrowband filters, the applicant, based on years of extensive practical experience and professional knowledge in the design and manufacture of such products, and in conjunction with the application of theoretical principles, has actively conducted research and innovation in order to create a solution that overcomes the defects in the existing technology and makes the composite narrowband filter more practical. After continuous research, design, and repeated prototype production and improvements, this utility model with real practical value has finally been created.

[0043] Figure 2 The distances between the layers have been magnified for easier labeling and understanding.

[0044] Please refer to Figures 1 to 3 This utility model provides a composite narrowband filter, including a quartz glass substrate 1; a first transparent buffer leveling layer 2 and alternating deposition layers 3 are sequentially disposed on the quartz glass substrate 1, the alternating deposition layers 3 including alternatingly deposited first Al2O3 deposition layers 31 and low refractive index deposition layers 32, and the refractive index of the first Al2O3 deposition layers 31 is greater than the refractive index of the low refractive index deposition layers 32; the low refractive index deposition layers 32 are first SiO2 deposition layers or HfO2 deposition layers.

[0045] Specifically, in this embodiment, a first transparent buffer leveling layer 2 is first deposited to form a smooth surface. This first transparent buffer leveling layer 2 further smooths the sides of the quartz glass substrate 1, resulting in a better deposition effect for the subsequent alternating deposition layers 3. That is, the smoothness of the alternating deposition layers 3 is significantly improved, reducing surface undulations. In addition, in the alternating deposition layers 3, the refractive index of the first Al2O3 deposition layer 31 is greater than that of the low refractive index deposition layer 32, thereby achieving a better anti-reflection effect and increasing the transmittance by approximately 222 nanometers, which is beneficial for improving the subsequent light emission and sterilization effect.

[0046] It should be noted that the Al2O3, SiO2, and HfO2 deposition layers are all materials formed using existing technologies. The key technology of this composite narrowband filter lies in the stacked structure between different layers.

[0047] The excimer nanometer is also known as an excimer lamp.

[0048] Optionally, with the thickness of the first Al2O3 deposition layer 31 ranging from 20nm to 50nm and the thickness of the first SiO2 layer or HfO2 deposition layer ranging from 30nm to 70nm, the transmittance of approximately 222nm waves is further improved, and the filtering effect of other wavelengths of nanometer waves is better, that is, fewer other wavelengths of nanometer waves can pass through the composite narrowband filter, which improves human safety.

[0049] Optionally, the thickness of the first Al2O3 deposition layer 31 is 34.2 nm, and the thickness of the first SiO2 layer is 47.8 nm. In this embodiment, the 222 nm photon transmittance can reach 92%.

[0050] Optionally, it also includes a second Al2O3 deposition layer 4; the second Al2O3 deposition layer 4 is disposed on the alternating deposition layer 3, and the thickness of the second Al2O3 deposition layer 4 is the same as the thickness of the first Al2O3 deposition layer 31. The second Al2O3 deposition layer 4, in conjunction with the alternating deposition layer 3, can effectively improve the transmittance of 222 nanometer waves.

[0051] Optionally, the first transparent buffer leveling layer 2 is an electron beam sputtered SiO2 layer with a thickness of no more than 30 nm. The electron beam sputtered SiO2 layer is a SiO2 layer formed using magnetron sputtering, which can further level the surface and lay a good foundation for subsequent coating processes.

[0052] Optionally, the thickness of the electron beam sputtered SiO2 layer is 20 nm.

[0053] Optionally, the composite narrowband filter further includes a second transparent buffer leveling layer 5 and an aluminum reflective layer 6; the second transparent buffer leveling layer 5 and the aluminum reflective layer 6 are sequentially stacked on the alternating deposition layers 3. The second transparent buffer leveling layer 5 serves the same function as the first transparent buffer leveling layer 2, both serving to level the surface. The aluminum reflective layer 6, placed on a level surface, provides even better performance.

[0054] Optionally, the second transparent buffer planarization layer 5 is a magnetron sputtered SiO2 layer with a thickness not exceeding 40 nm, and the aluminum reflective layer 6 has a thickness not exceeding 100 nm.

[0055] Optionally, the thickness of the magnetron sputtered SiO2 layer is 30 nm, and the thickness of the aluminum reflective layer 6 is 80 nm.

[0056] Optionally, the composite narrowband filter also includes a SiO2 protective layer 7 deposited on the aluminum reflective layer 6 by plasma-enhanced chemical vapor deposition; the thickness of the SiO2 protective layer 7 is not less than 100 nm. The SiO2 protective layer 7 provides protection and prevents the aluminum reflective layer 6 from being scratched.

[0057] Example 2

[0058] This embodiment discloses an excimer nanometer, including a composite narrowband filter as described in any of the preceding embodiments.

[0059] The excimer nanometer also includes a support frame 82, in which a lamp 81 is installed. The lamp 81 is used to emit ultraviolet light, which is then filtered by a composite narrow-band filter to disinfect the outside environment.

[0060] Finally, it should be noted that although the above embodiments have been described in the text and drawings of this application, this should not limit the scope of patent protection of this application. Any technical solutions that are based on the essential concept of this application and utilize the content described in the text and drawings of this application, resulting in equivalent structural or procedural substitutions or modifications, as well as the direct or indirect application of the technical solutions of the above embodiments to other related technical fields, are all included within the scope of patent protection of this application.

Claims

1. A composite narrowband filter, characterized in that, Including quartz glass substrate; The quartz glass substrate is sequentially provided with a first transparent buffer planarization layer and an alternating deposition layer. The alternating deposition layer includes an alternating first Al2O3 deposition layer and a low refractive index deposition layer, and the refractive index of the first Al2O3 deposition layer is greater than the refractive index of the low refractive index deposition layer. The low-refractive-index deposition layer is either a first SiO2 deposition layer or an HfO2 deposition layer.

2. The composite narrowband filter according to claim 1, characterized in that, The thickness of the first Al2O3 deposition layer ranges from 20nm to 50nm; the thickness of the first SiO2 layer or HfO2 deposition layer ranges from 30nm to 70nm.

3. The composite narrowband filter according to claim 2, characterized in that, The thickness of the first Al2O3 deposition layer is 34.2 nm, and the thickness of the first SiO2 layer is 47.8 nm.

4. The composite narrowband filter according to claim 1, characterized in that, It also includes a second Al2O3 deposition layer; The second Al2O3 deposition layer is disposed on the alternating deposition layer, and the thickness of the second Al2O3 deposition layer is the same as the thickness of the first Al2O3 deposition layer.

5. The composite narrowband filter according to claim 1, characterized in that, The first transparent buffer planarization layer is an electron beam sputtered SiO2 layer, and the thickness of the electron beam sputtered SiO2 layer is no more than 30 nm.

6. The composite narrowband filter according to claim 5, characterized in that, The thickness of the electron beam sputtered SiO2 layer is 20 nm.

7. The composite narrowband filter according to claim 1, characterized in that, It also includes a second transparent buffer flattening layer and an aluminum reflective layer; The second transparent buffer leveling layer and the aluminum reflective layer are sequentially stacked on the alternating deposition layers.

8. The composite narrowband filter according to claim 7, characterized in that, The second transparent buffer flattening layer is a magnetron sputtered SiO2 layer with a thickness of no more than 40 nm, and the aluminum reflective layer has a thickness of no more than 100 nm.

9. The composite narrowband filter according to claim 8, characterized in that, The thickness of the magnetron sputtered SiO2 layer is 30 nm, and the thickness of the aluminum reflective layer is 80 nm.

10. An excimer nanometer, characterized in that, It includes a composite narrowband filter as described in any one of claims 1 to 9.

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