Lifting device

Abstract

A lifting device includes a main board, an auxiliary board disposed on the main board, a plurality of connecting units connecting the main board to the auxiliary board, a plurality of legs adjacent to the opposite sides of each of the main board and the auxiliary board and extending downward, a head connected to the main board and protruding upward, a plurality of connecting posts connected to the main board and extending downward, and a support ring connected to the lower end of the connecting posts.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2024-0121351, filed on September 6, 2024, and all rights derived therefrom, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0002] Embodiments of this disclosure relate to a lifting device and a chemical vapor deposition apparatus including the lifting device. Background Technology

[0003] Methods for depositing thin films on substrates include physical vapor deposition (PVD) and chemical vapor deposition (CVD). Chemical vapor deposition is defined as a method of depositing thin films on a substrate through the chemical reaction of the decomposed source gas after its decomposition.

[0004] In chemical vapor deposition methods, plasma chemical vapor deposition methods (e.g., plasma-enhanced CVD (PECVD)) use plasma to decompose the source gas. A plasma chemical vapor deposition apparatus includes a processing chamber, a nozzle disposed within the processing chamber for injecting the source gas, and a stage disposed below the nozzle where a substrate is mounted.

[0005] A gas injection orifice for injecting the source gas is defined within a nozzle. The source gas is injected through the nozzle, high-frequency electricity is applied to the nozzle, and a ground is formed according to the electric field. According to this process, the source gas is decomposed, and a deposition material generated from the chemical reaction of the decomposed source gas is deposited on a substrate to form a thin film. Utility Model Content

[0006] The deposited material is deposited not only on the substrate but also at various locations within the room, and it may deposit in the largest quantity on the bottom surface of the nozzles emitting the source gas. If the deposited film on the bottom surface of the nozzle becomes thick, the film can detach from the nozzle, thus forming contaminants. Therefore, a method is needed for cleaning the nozzles or for easily replacing them.

[0007] This disclosure provides a lifting device that has increased rigidity as the thickness decreases and a chemical vapor deposition apparatus including the lifting device.

[0008] One embodiment of the present invention provides a lifting device, comprising: a main board; an auxiliary board disposed on the main board; a plurality of connecting units configured to connect the main board to the auxiliary board; a plurality of support legs adjacent to opposite sides of each of the main board and the auxiliary board and extending downward; a head connected to the main board and protruding upward; a plurality of connecting columns connected to the main board and extending downward; and a support ring connected to the lower end of the plurality of connecting columns.

[0009] In one embodiment of the present invention, a chemical vapor deposition apparatus includes: a main board extending longer in a first direction than in a second direction intersecting the first direction; an auxiliary plate disposed on and connected to the main board; a plurality of legs adjacent to opposite sides of each of the main board and the auxiliary plate and extending downward; a plurality of chamber connections connected to the lower ends of the plurality of legs; a head connected to the main board and protruding upward; a plurality of connecting posts connected to the main board and extending downward; a support ring connected to the lower ends of the plurality of connecting posts; an upper chamber connected to the support ring and the plurality of chamber connections; and a lower chamber disposed below the upper chamber, wherein the upper and lower chambers are connected to each other to define a process space in which a chemical vapor deposition process is performed, and the thickness of the central portion of the main board is greater than the thickness of each of the two opposite side portions of the main board in the first direction. Attached Figure Description

[0010] The above and other features of the present invention will become more apparent from the embodiments described in further detail with reference to the accompanying drawings, in which:

[0011] Figure 1 A perspective view of a lifting device in a chemical vapor deposition apparatus according to an embodiment of the present invention is shown.

[0012] Figure 2 In order to be in Figure 1 The plan view of the lifting device as seen from above shows the components of the lifting device connected to each other.

[0013] Figure 3 For along Figure 2 A cross-sectional view taken from the I-I' line;

[0014] Figure 4 for Figure 3 An enlarged view of the first region AA1 shown in the example;

[0015] Figure 5 for Figure 3 An enlarged view of the second region AA2 shown in the example;

[0016] Figure 6 A cross-sectional view of the processing chamber of a chemical vapor deposition apparatus according to an embodiment of the present invention is shown.

[0017] Figure 7 A cross-sectional view of pixels comprising a thin film provided using a chemical vapor deposition apparatus according to an embodiment of the present invention;

[0018] Figure 8 To connect Figure 5 The image shows a view of the head's lifting platform.

[0019] Figures 9A to 9CA view illustrating the separation operation of the upper chamber of the lifting device using this utility model;

[0020] Figures 10A to 10C The following is a view illustrating the deformation state of the comparison motherboard based on the external force applied to the central part of the comparison motherboard;

[0021] Figure 11A and Figure 11B A view illustrating the separation operation of the upper chamber using a comparative lifting device;

[0022] Figures 12A to 12C A view illustrating the deformation state of a motherboard according to an embodiment of the present invention due to an external force applied to the central portion of the motherboard;

[0023] Figure 13 For example, through Figure 3 A view illustrating the stress distribution state of the connecting unit and auxiliary plate;

[0024] Figure 14 For example, the stress is in Figure 4 A magnified view of the scattered state;

[0025] Figure 15 A view illustrating the configuration of a lifting device according to another embodiment of the present invention; and

[0026] Figure 16 The following is a view illustrating the deformation state of the main board, auxiliary board, and dummy auxiliary board during the lifting operation of the upper chamber. Detailed Implementation

[0027] The present invention will be described more fully below with reference to the accompanying drawings, in which various embodiments are illustrated. However, the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art.

[0028] It will be understood that when an element is said to be "on" another element, it may be directly on the other element, or there may be an intermediary element between them. In contrast, when an element is said to be "directly on" another element, there is no intermediary element.

[0029] In this specification, it will also be understood that when a component or area, layer, or part is referred to as being "connected to" or "attached to" another component, it can be directly connected to / attached to the other component, or there may be an intermediary third component.

[0030] The same numbers refer to the same components throughout. Furthermore, in the diagrams, the thickness, proportions, and dimensions of the components are enlarged for clarity.

[0031] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, “a,” “the,” and “at least one” do not indicate a limitation of quantity and are intended to include both the singular and the plural unless the context clearly indicates otherwise. Thus, reference to an element as “a” followed by reference to an element as “the” in a claim includes one element and multiple elements. For example, “element” has the same meaning as “at least one element” unless the context clearly indicates otherwise. “At least one” is not to be construed as limited to “a.” “Or” means “and / or.” As used herein, the term “and / or” includes any and all combinations of one or more of the associated enumerated items. It will be further understood that the term “comprising,” when used in this specification, indicates the presence of a described feature, area, integer, step, operation, element, and / or component, but does not exclude the presence or addition of one or more additional features, areas, integers, steps, operations, elements, components, and / or groups thereof.

[0032] It will be understood that although the terms “first,” “second,” and “third,” etc., may be used herein to describe various elements, components, areas, layers, and / or sections, these elements, components, areas, layers, and / or sections should not be limited by these terms. These terms are used only to distinguish one element, component, area, layer, or section from another. Therefore, the first element, component, area, layer, or section discussed below may be referred to as the second element, component, area, layer, or section without departing from the teachings herein.

[0033] Furthermore, relative terms, such as “below” or “bottom” and “above” or “top”, are used herein to describe the relationship between one element and another, as illustrated in the accompanying drawings. It will be understood that, in addition to the orientation depicted in the figures, relative terms are intended to cover different orientations of the device. For example, if a device in one of the figures is flipped, an element described as being “below” the other element will be oriented “above” the other element. Thus, depending on the particular orientation of the figure, the term “below” can cover both “below” and “above” orientations. Similarly, if a device in one of the figures is flipped, an element described as being “below” or “under” the other element will be oriented “above” the other element. Thus, the term “below” or “under” can cover both “above” and “below” orientations.

[0034] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will be further understood that terms, such as those defined in common dictionaries, shall be interpreted as having a meaning consistent with their meaning in the relevant field and in the context of this disclosure, and shall not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0035] Embodiments are described herein with reference to illustrative cross-sectional views, which are preferred embodiments. Therefore, the illustrated shapes may vary due to factors such as manufacturing techniques and / or tolerances. Consequently, the embodiments described herein should not be construed as limited to areas of a particular shape illustrated herein, but should include shape deviations, for example, due to manufacturing processes. For instance, areas illustrated or described as flat may typically have rough and / or non-linear characteristics. Furthermore, illustrated sharp corners may be rounded. Therefore, the areas illustrated in the figures are schematic in nature, and their shapes are not intended to illustrate precise shapes of the areas, nor are they intended to limit the scope of the claims.

[0036] Embodiments of the present invention are described below with reference to the accompanying drawings.

[0037] Figure 1 The following is a perspective view of the lifting device of a chemical vapor deposition apparatus according to an embodiment of the present invention.

[0038] refer to Figure 1 An embodiment of the lifting device LFA may include a main board MPT, an auxiliary board SPT, a head HDP, multiple connecting columns CPL, a support ring SRG, multiple first connecting parts CNP1, multiple second connecting parts CNP2, multiple side connecting parts SCP, multiple outriggers LGP, multiple chamber connecting parts CHC, and multiple connecting plates CPP.

[0039] The motherboard MPT may have a flat top surface defined by a first direction DR1 and a second direction DR2 intersecting the first direction DR1. The motherboard MPT may extend longer in the first direction DR1 than in the second direction DR2. When viewed in a plane, the motherboard MPT may have a rectangular shape having a long side extending in the first direction DR1 and a short side extending in the second direction DR2.

[0040] In the following text, the direction substantially perpendicular to the plane defined by the first direction DR1 and the second direction DR2 can be defined as the third direction DR3. The third direction DR3 may be the thickness direction of the motherboard MPT. In addition, in this specification, "when viewed in a plane" can be defined as the state when viewed in the third direction DR3 or in a plan view.

[0041] The motherboard MPT may include a central portion CTP. The central portion CTP may be defined as the portion of the motherboard MPT adjacent to its center point based on a first direction DR1. The central portion CTP may have a predetermined shape. In one embodiment, for example, the central portion CTP may be defined as having a shape that protrudes from a circular shape in a second direction DR2, such as... Figure 1 As shown in the figure. However, the shape of the central CTP is not limited to this.

[0042] Multiple first connection holes H1 may be defined in the motherboard MPT. The first connection holes H1 may be defined on a third-direction DR3 or formed to pass through the motherboard MPT. The first connection holes H1 may be defined between the edge of the central portion CTP and the edge of the motherboard MPT. The first connection holes H1 may be distributed and arranged in the area between the edge of the central portion CTP and the edge of the motherboard MPT. The first connection holes H1 may be defined at various locations between the edge of the central portion CTP and the edge of the motherboard MPT.

[0043] The auxiliary board SPT can be mounted on the main board MPT. When viewed in a flat surface, the main board MPT can overlap with the auxiliary board SPT. The main board MPT and the auxiliary board SPT can be connected to each other via a connecting unit, as will be referred to below. Figure 3 Please describe this configuration in detail.

[0044] The auxiliary plate SPT may have a surface on a plane defined by a first direction DR1 and a second direction DR2. The auxiliary plate SPT may extend longer in the first direction DR1 than in the second direction DR2. When viewed in a plane, the auxiliary plate SPT may have a rectangular shape having a long side extending in the first direction DR1 and a short side extending in the second direction DR2.

[0045] The opening OP can be defined in the central portion of the auxiliary board SPT. The opening OP can be defined on the third direction DR3 or formed to pass through the auxiliary board SPT. When viewed in a plane, the opening OP can overlap with the central portion CTP of the main board MPT. The opening OP can be defined to have a shape corresponding to the shape of the central portion CTP.

[0046] Multiple second connection holes H2 may be defined in the auxiliary plate SPT. The second connection holes H2 may be defined on the third direction DR3 or formed to pass through the auxiliary plate SPT. The second connection holes H2 may be defined between the edge of the opening OP and the edge of the auxiliary plate SPT. The second connection holes H2 may be distributed and arranged in the region between the edge of the opening OP and the edge of the auxiliary plate SPT. The second connection holes H2 may be defined at various locations between the edge of the opening OP and the edge of the auxiliary plate SPT.

[0047] The head HDP can be connected to the motherboard MPT and can protrude upwards or onto the third-party DR3. When viewed in a planar manner, the head HDP can overlap with the center portion CTP of the motherboard MPT. In one embodiment, for example, the head HDP can overlap with the center point of the center portion CTP and be connected to the motherboard MPT. The head HDP can be exposed upwards through an opening OP defined in the auxiliary board SPT. In one embodiment, when viewed in a planar manner, the head HDP can be connected to the center portion CTP of the motherboard MPT.

[0048] The connecting post CPL can be connected to the motherboard MPT and can extend downwards or in a direction opposite to the third direction DR3. Each of the connecting posts CPL can extend in the third direction DR3. The third direction DR3 can be defined as a vertical direction that intersects perpendicularly with the top surface of the motherboard MPT, which is a plane. The connecting post CPL can have a cylindrical shape extending in the third direction DR3.

[0049] When viewed in a planar plane, the connecting post CPL may overlap with the central portion CTP of the motherboard MPT. When viewed in a planar plane, the connecting post CPL may be arranged adjacent to the head HDP to surround the head HDP. The connecting post CPL may be respectively disposed (or inserted) in a plurality of slots GV defined in the central portion CTP of the motherboard MPT, and may extend downward. In one embodiment, when viewed in a planar plane, the connecting post CPL may be connected to the central portion CTP of the motherboard MPT.

[0050] The connecting post CPL can be exposed through an opening OP defined in the auxiliary plate SPT. In one embodiment, for example, the upper end of the connecting post CPL disposed in the slot GV can be exposed upward through the opening OP.

[0051] When viewed in a plane or plan view, the support ring SRG may have an annular shape. The support ring SRG may be positioned below the central portion CTP. The support ring SRG may be positioned below the connecting post CPL and connected to the lower end of the connecting post CPL. Multiple third connecting holes H3 may be defined within the support ring SRG.

[0052] When viewed in a plane, the connecting post CPL can be arranged in a ring shape along the support ring SRG. The third connecting hole H3 can be defined between a portion of the connecting post CPL.

[0053] The support ring SRG can be connected to the processing chamber, which will be referred to below later. Figure 6 The processing chamber is described in detail below. The connecting unit can connect the support ring SRG to the processing chamber via the third connecting hole H3, and will be referred to below. Figure 6 Please describe this configuration in detail.

[0054] The first connecting portion CNP1 may extend in the second direction DR2 and be spaced apart in the first direction DR1. The first connecting portion CNP1 may be adjacent to the opposite sides of the main board MPT and the auxiliary board SPT in the first direction DR1.

[0055] Each of the first connecting portions CNP1 may have a rectangular column shape extending in the second direction DR2. The first connecting portion CNP1 may have a tube shape. In one embodiment, for example, a first opening OP1 opening in the second direction DR2 may be defined in each of the first connecting portions CNP1.

[0056] The second connecting portion CNP2 may extend in the second direction DR2 and be spaced apart in the first direction DR1. The second connecting portion CNP2 may be adjacent to the two opposite sides of the main board MPT and the auxiliary board SPT in the first direction DR1.

[0057] Each of the second connecting portions CNP2 may have a rectangular column shape extending in the second direction DR2. The second connecting portions CNP2 may have a tube shape. In one embodiment, for example, a second opening OP2 opening in the second direction DR2 may be defined in each of the second connecting portions CNP2.

[0058] The first opening OP1, defined in the first connecting portion CNP1, and the second opening OP2, defined in the second connecting portion CNP2, can be defined as extended openings extending in the second direction DR2.

[0059] The second connecting part CNP2 may be disposed on the first connecting part CNP1. The second connecting part CNP2 can be connected to the first connecting part CNP1 via a connecting unit. Reference will be made below. Figure 3 Please describe this configuration in detail.

[0060] The side connector SCP may extend in the second direction DR2 and be spaced apart in the first direction DR1. The side connector SCP may be adjacent to the opposite sides of the motherboard MPT and the auxiliary board SPT in the first direction DR1. The side connector SCP may extend longer in the second direction DR2 than in the first direction DR1 and the third direction DR3. In addition, the side connector SCP may extend longer in the third direction DR3 than in the first direction DR1.

[0061] The side connecting parts SCP can be respectively disposed on the inner surfaces of the second connecting part CNP2 facing each other in the first direction DR1. The side connecting parts SCP can be respectively connected to the inner surfaces of the second connecting part CNP2 via connecting units. Reference will be made below. Figure 3 Please describe this configuration in detail.

[0062] The support leg LGP may be adjacent to opposite sides of the main board MPT and auxiliary board SPT in the first direction DR1. Each of the support leg LGPs may be disposed below the first connecting portion CNP1 and extend downward. Each of the support leg LGPs may extend in the third direction DR3. Each of the support leg LGPs may be connected to the first connecting portion CNP1. In one embodiment, for example, the support leg LGP may be connected to opposite sides of the first connecting portion CNP1 in the second direction DR2.

[0063] Each of the outriggers (LGPs) may have a rectangular column shape extending in the third direction (DR3). Although not shown, each of the outriggers (LGPs) may have a hollow tube shape opening in the third direction (DR3).

[0064] The chamber connection section CHC can be installed below the outrigger section LGP. The chamber connection section CHC can be connected to the lower end of the outrigger section LGP.

[0065] The connecting plate CPP can connect the first connecting portion CNP1 to the outrigger portion LGP and also connect the outrigger portion LGP to the chamber connecting portion CHC. In one embodiment, for example, each of the connecting plates CPP is disposed on the adjacent side surfaces of the first connecting portion CNP1 and the outrigger portion LGP, and can be connected to the first connecting portion CNP1 and the outrigger portion LGP by a connecting unit (such as a bolt, not shown). Therefore, the first connecting portion CNP1 and the outrigger LGP can be connected to each other by the connecting plate CPP.

[0066] A connecting plate CPP can be provided on the adjacent side surfaces of the outrigger LGP and the chamber connection CHC, and can be connected to the outrigger LGP and the chamber connection CHC by a connecting unit (such as a bolt) not shown. Therefore, the outrigger LGP and the chamber connection CHC can be connected to each other by the connecting plate CPP.

[0067] although Figure 1 Although not shown, the holes for allowing the installation of the connection unit may be defined in the first connection portion CNP1, the second connection portion CNP2, the side connection portion SCP, and the chamber connection portion CHC.

[0068] Figure 2 In order to be in Figure 1 The plan view of the lifting device, as seen from above, shows the components of the lifting device connected to each other. Figure 3 For along Figure 2 A cross-sectional view taken from the I-I' line. Figure 4 for Figure 3 An enlarged view of the first region AA1 shown in the example. Figure 5 for Figure 3 An enlarged view of the second region AA2 shown in the example.

[0069] refer to Figure 2 and Figure 3 In one embodiment, the main board MPT and the auxiliary board SPT may be arranged to be spaced apart by a predetermined distance GP in the third direction DR3. That is, the main board MPT and the auxiliary board SPT may not be in contact with each other. The main board MPT may have a shorter length than the auxiliary board SPT in the first direction DR1.

[0070] The lifting device LFA may include multiple connection units (CUs). The connection units (CUs) may extend onto the third-party DR3. Each of the connection units (CUs) connects the main board (MPT) to the auxiliary board (SPT). The connection unit (CU) may extend from above the main board (MPT) to below the auxiliary board (SPT) and penetrate both the main board (MPT) and the auxiliary board (SPT).

[0071] The connecting unit CU can be inserted into the corresponding first connecting hole H1 and second connecting hole H2, thereby allowing the main board MPT and the auxiliary board SPT to be connected to each other. The connecting unit CU can be implemented using various fastening structures such as bolts and nuts.

[0072] Furthermore, the specification states that "thickness" can be defined as a value measured on a third-party DR3.

[0073] The central portion CTP of the motherboard MPT may have a predetermined thickness. The central portion CTP of the motherboard MPT may have a first thickness TH1, and the two opposite side portions of the motherboard MPT in the first direction DR1 may have a second thickness TH2. The first thickness TH1 may be greater than the second thickness TH2. The thickness between the side portions and the central portion CTP of the motherboard MPT may gradually increase from the side portions toward the central portion CTP.

[0074] Because the connecting unit CU is inserted into the first connecting hole H1, the connecting unit CU can be positioned between the central portion CTP and the edge of the motherboard MPT. Furthermore, the connecting unit CU can be distributed and positioned in the area between the central portion CTP and the edge of the motherboard MPT.

[0075] Because the connecting unit CU is inserted into the second connecting hole H2, the connecting unit CU can be positioned between the opening OP of the auxiliary plate SPT and the edge of the auxiliary plate SPT. Alternatively, the connecting unit CU can be distributed and positioned in the area between the opening OP and the edge of the auxiliary plate SPT.

[0076] refer to Figures 2 to 4An embodiment of the lifting device LFA may include multiple first connecting units CU1, second connecting units CU2, third connecting units CU3, and fourth connecting units CU4. The first connecting units CU1, second connecting units CU2, third connecting units CU3, and fourth connecting units CU4 may be implemented using various fastening structures such as bolts and nuts.

[0077] The first connection unit CU1 can extend on the third direction DR3 and can connect the main board MPT and the auxiliary board SPT to the side connection part SCP. The adjacent portions of the main board MPT on opposite sides of the main board MPT on the first direction DR1 can be defined as the first side portion SP1. The overlapping portions of the first side portion SP1 and the auxiliary board SPT can be disposed below the side connection part SCP and connected to the lower portion of the side connection part SCP through the first connection unit CU1.

[0078] although Figure 3 and Figure 4 Not shown, but the first connecting unit CU1 can be inserted into the corresponding first connecting hole H1 and the corresponding second connecting hole H2 to connect to the lower part of the side connecting part SCP.

[0079] The second connecting unit CU2 can extend in the first direction DR1, and the side connecting part SCP can be connected to the second connecting part CNP2. Although Figure 3 and Figure 4 Not shown, but the second connecting unit CU2 can be inserted into the hole defined in the side connecting part SCP and the hole defined in the second connecting part CNP2.

[0080] The third connecting unit CU3 can extend onto the third direction DR3, and can connect the second connecting part CNP2 to the first connecting part CNP1. The third connecting unit CU3 can be disposed in the first opening OP1 and the second opening OP2. Although Figure 3 and Figure 4 The third connecting unit CU3 is not shown, but it can be inserted into the hole defined in the first connecting part CNP1 and the second connecting part CNP2.

[0081] The fourth connecting unit CU4 can extend in the first direction DR1 and can connect the connecting plate CPP to the first connecting part CNP1. Although Figure 3 and Figure 4 Although not shown, the fourth connecting unit CU4 can be inserted into the holes respectively defined in the first connecting part CNP1, the leg part LGP and the chamber connecting part CHC.

[0082] refer to Figure 2 , Figure 3 and Figure 5The head HDP can be disposed in the groove GV-1 defined in the central portion CTP. The width of the lower portion of the head HDP in the first direction DR1 or the second direction DR2 can gradually increase downward (i.e., towards the bottom surface of the central portion CTP), so that the head HDP can be securely fixed to the central portion CTP. In addition, the entire head HDP may not be exposed to the central portion CTP, and only the upper portion of the head HDP may be exposed to the central portion CTP.

[0083] When the head HDP is disposed on and connected to the top surface of the central portion CTP, the height of the upper end of the head HDP can be increased. However, in one embodiment of the present invention, because the lower part of the head HDP is inserted into the groove GV-1, the height of the upper end of the head HDP can be reduced.

[0084] The upper part of the head HDP can protrude through the opening OP of the auxiliary plate SPT and onto the auxiliary plate SPT. The connecting column CPL can be located below the auxiliary plate SPT. The lifting device LFA may include multiple connecting units CU. The connecting column CPL can be connected to the central part CTP through the connecting unit CU' in the slot GV.

[0085] Figure 6 A cross-sectional view of the processing chamber of a chemical vapor deposition apparatus according to an embodiment of the present invention is shown.

[0086] In one embodiment, for example, such as Figure 6 As shown, the support leg LGP, chamber connection CHC, connecting column CPL, support ring SRG, and fifth connection unit CU5 of the lifting device LFA connected to the processing chamber PCH are shown together with the processing chamber PCH.

[0087] refer to Figure 6 A chemical vapor deposition (CDA) apparatus may include a lifting unit (LFA), a processing chamber (PCH), a nozzle (SH), a connection support unit (CSP), a head connection unit (HCP), a stage (STG), multiple lifting pins (LPN), a high-frequency power supply unit (HFP), a source gas supply unit (SGS), a gas supply pipe (PIP), and a vertical movement unit (VMV). The nozzle (SH), the connection support unit (CSP), the head connection unit (HCP), the stage (STG), and each lifting pin (LPN) may be located within the processing chamber (PCH).

[0088] The processing chamber PCH can be defined as a vacuum chamber. The interior of the processing chamber PCH can be maintained under vacuum during a chemical vapor deposition process. Although not shown, a chemical vapor deposition apparatus CDA may include a vacuum pump connected to the processing chamber PCH to maintain the processing chamber PCH under vacuum.

[0089] The processing chamber PCH may include an upper chamber UCH and a lower chamber LCH disposed below the upper chamber UCH. The opposite sides of the upper chamber UCH may have a stepped shape. The upper chamber UCH and the lower chamber LCH may be connected to each other to define a process space for performing chemical vapor deposition processes. The nozzle SH, connecting support CSP, head connector HCP, stage STG, and lifting pin LPN may be disposed within the processing chamber PCH.

[0090] When the interior of the processing chamber PCH is under vacuum due to a vacuum pump, the exterior of the processing chamber PCH can be at atmospheric pressure. In this case, the upper chamber UCH and the lower chamber LCH can be connected together based on the adsorption force caused by the pressure difference. When the interior of the processing chamber PCH returns to atmospheric pressure, the upper chamber UCH and the lower chamber LCH can be easily separated from each other. However, the present invention is not limited to this; in one embodiment, the upper chamber UCH and the lower chamber LCH can be connected or separated from each other by a connecting unit such as a screw.

[0091] The nozzle SH can be connected to the upper chamber UCH within the treatment chamber PCH. In one embodiment, for example, a connection support CSP connected to the upper end of the upper chamber UCH can extend inward toward the interior of the treatment chamber PCH on the third-direction DR3 and connect to the nozzle SH. Each of the connection supports CSPs effectively prevents the nozzle SH from sagging.

[0092] The opposite sides of the nozzle SH can be connected to the upper chamber UCH by the head connector HCP. The head connector HCP can be connected to the top surface of the upper chamber UCH and the opposite sides of the nozzle SH within the treatment chamber PCH. Therefore, the nozzle SH, the connecting support CSP, and the head connector HCP can be connected to the upper chamber UCH.

[0093] Multiple gas injection holes GH can be defined within the nozzle SH. The gas injection holes GH can be defined on the third-direction DR3 or formed through the nozzle SH.

[0094] The STG (Stationary Sprayer Unit) can be installed below the nozzle SH, and the vertical movement unit VMV (Vertical Movement Unit VMV) can be installed below the STG. The VMV can be connected to the STG to allow the STG to reciprocate on the third-direction DR3.

[0095] The substrate SUB, which is the object to be processed, can be placed on the top surface of the stage STG. The lifting pin LPN can be set to penetrate the stage STG. The substrate SUB can be placed on the lifting pin LPN. The stage STG, substrate SUB, and lifting pin LPN can be placed inside the lower chamber LCH.

[0096] Although not shown, a gate valve may be confined in the lower chamber LCH, and the substrate SUB may be transferred to the processing chamber PCH via the gate valve. The substrate SUB transferred to the processing chamber PCH may be mounted on the lifting pin LPN.

[0097] When the substrate SUB is transferred into the processing chamber PCH, the top surface of the stage STG can be positioned below the upper end of each of the lifting pins LPN. After the substrate SUB is positioned on the lifting pins LPN, the stage STG can be moved upward by the vertical moving unit VMV to allow the substrate SUB to be placed on the top surface of the stage STG.

[0098] The source gas supply unit (SGS) can be connected to the upper end of the upper chamber UCH via a gas supply pipe (PIP). Figure 6 In the illustration, the gas supply pipe PIP is shown as a line for ease of explanation.

[0099] Orifice H can be confined within the upper chamber UCH, and gas supply pipe PIP can be connected to orifice H. Source gas supply unit SGS can supply source gas to the treatment chamber PCH via gas supply pipe PIP and orifice H. Source gas can be supplied to nozzle SH and injected into the treatment chamber PCH through gas injection port GH.

[0100] The high-frequency power supply unit (HFP) can be installed on the upper chamber UCH and connected to the nozzle SH located in the treatment chamber PCH. The HFP provides high-frequency power to the nozzle SH. The STG unit can be grounded.

[0101] When a high-frequency power supply is applied to the nozzle SH and the stage STG is grounded, an electric field is provided, and plasma can be generated through the electric field. According to this process, the source gas is decomposed, and a deposition material generated by the chemical reaction of the decomposed source gas is deposited on the substrate SUB to provide a thin film. In one embodiment, for example, the thin film may be a silicon oxide (SiO2) film.

[0102] The deposited material is deposited not only on the substrate SUB, but also at various locations within the processing chamber PCH, and particularly, the deposited material can be deposited in maximum quantity on the bottom surface of the nozzle SH of the exhaust source gas. As the deposited film on the bottom surface of the nozzle SH thickens, the deposited film can detach from the nozzle SH, thereby forming contaminant CPT.

[0103] When the deposited material on the bottom surface of the nozzle SH reaches a predetermined thickness, the nozzle SH can be replaced. In one embodiment, for example, the upper chamber UCH connected to the nozzle SH can be separated from the lower chamber LCH to remove the contaminated nozzle SH, and then a new upper chamber UCH connected to the new nozzle SH can be connected to the lower chamber LCH.

[0104] The lifting unit LFA can be used to separate the upper chamber UCH from the lower chamber LCH. The lifting unit LFA can be connected to the upper chamber UCH.

[0105] The support ring SRG can be connected to the upper chamber UCH via the fifth connecting unit CU5. In one embodiment, for example, the fifth connecting unit CU5 can be inserted... Figure 1 In the third connecting hole H3 illustrated, a fifth connecting unit CU5, having a structure similar to that of a screw, can be connected to the upper chamber UCH. Therefore, the support ring SRG can be connected to the upper chamber UCH via the fifth connecting unit CU5. The connecting post CPL can be connected to the upper chamber UCH via the support ring SRG.

[0106] The chamber connection portion CHC can be connected to the opposite sides of the upper chamber UCH, which is provided in a stepped manner. In one embodiment, for example, the chamber connection portion CHC can be connected to the opposite sides of the upper chamber UCH, which is provided in a stepped manner, via a sixth connecting unit CU6. The support leg portion LGP can be connected to the upper chamber UCH via the chamber connection portion CHC.

[0107] By connecting the support ring SRG and the chamber connection CHC to the upper chamber UCH, the lifting device LFA can be connected to the treatment chamber PCH. The lifting device LFA can be moved upward via the lifting frame, and the upper chamber UCH connected to the lifting device LFA can be separated from the lower chamber LCH. Therefore, contaminated nozzles SH connected to the upper chamber UCH can be removed. The following will refer to... Figure 9A and Figure 9B Please describe the operation in detail.

[0108] Figure 7 This is a cross-sectional view of pixels comprising a thin film provided using a chemical vapor deposition apparatus according to an embodiment of the present invention.

[0109] exist Figure 7 Among the layers shown, the silicon oxide layer can be formed by chemical vapor deposition (CDA) equipment according to an embodiment of the present invention.

[0110] refer to Figure 7 In one embodiment, the pixel PX may include a transistor TR and an organic light-emitting element OLED. The light-emitting element OLED may include a first electrode AE ​​or anode, a second electrode CE or cathode, a hole control layer HCL, an electron control layer ECL, and an emitter layer EML.

[0111] Transistors (TR) and light-emitting elements (OLEDs) can be mounted on a substrate (SUB). Although Figure 7 The example shown is a transistor TR, but in essence, a pixel PX may include multiple transistors for driving the light-emitting element OLED and at least one capacitor.

[0112] The display area DA may include a light-emitting area LA corresponding to each pixel PX and a non-light-emitting area NLA surrounding the light-emitting area LA. The light-emitting element OLED may be disposed in the light-emitting area LA.

[0113] A buffer layer BFL can be disposed on the substrate SUB, and the buffer layer BFL can be an inorganic layer. A semiconductor pattern SP is disposed on the buffer layer BFL. The semiconductor pattern SP can include polycrystalline silicon, amorphous silicon, or metal oxide.

[0114] Semiconductor patterns (SPs) can be doped with N-type or P-type dopants. Semiconductor patterns (SPs) can include heavily doped regions and lightly doped regions. Heavily doped regions can have higher conductivity than lightly doped regions and can essentially serve as the source and drain electrodes of a transistor (TR). Lightly doped regions can effectively correspond to the active portion or channel region of a transistor.

[0115] The source S, active portion A, and drain D of transistor TR can be provided by (or defined by a portion of) semiconductor pattern SP. A first insulating layer INS1 can be disposed on semiconductor pattern SP. The gate G of transistor TR can be disposed on the first insulating layer INS1. A second insulating layer INS2 can be disposed on the gate G. A third insulating layer INS3 can be disposed on the second insulating layer INS2.

[0116] The connecting electrode CNE may include a first connecting electrode CNE1 and a second connecting electrode CNE2 to connect the transistor TR and the light-emitting element OLED. The first connecting electrode CNE1 may be disposed on the third insulating layer INS3 and connected to the drain electrode D through a first contact hole CH1 defined in the first insulating layer INS1 to the third insulating layer INS3.

[0117] A fourth insulating layer INS4 may be disposed on the first connecting electrode CNE1. A fifth insulating layer INS5 may be disposed on the fourth insulating layer INS4. A second connecting electrode CNE2 may be disposed on the fifth insulating layer INS5. The second connecting electrode CNE2 may be connected to the first connecting electrode CNE1 through a second contact hole CH2 defined in the fourth insulating layer INS4 and the fifth insulating layer INS5. A sixth insulating layer INS6 may be disposed on the second connecting electrode CNE2.

[0118] The layers from the buffer layer BFL to the sixth insulating layer INS6 can be defined as circuit element layers. The buffer layer BFL and the first insulating layers INS1 to the fourth insulating layers INS4 can each include an inorganic layer. The fifth insulating layer INS5 and the sixth insulating layer INS6 can each include an organic layer.

[0119] In one embodiment, for example, the buffer layer BFL and the first insulating layer INS1 may each comprise a silicon oxide layer, and the second insulating layer INS2 may comprise a silicon nitride layer. The third insulating layer INS3 may comprise a plurality of inorganic insulating layers comprising or composed of different materials and stacked on top of each other. In one embodiment, for example, the third insulating layer INS3 may comprise a silicon nitride layer and a silicon oxide layer. The fourth insulating layer INS4 may comprise a silicon oxide layer.

[0120] A first electrode AE ​​may be disposed on a sixth insulating layer INS6. The first electrode AE ​​may be connected to a second connecting electrode CNE2 via a third contact hole CH3 defined in the sixth insulating layer INS6. A pixel defining layer PDL having an opening PX_OP defined therein for exposing a predetermined portion of the first electrode AE ​​may be disposed on the first electrode AE ​​and the sixth insulating layer INS6.

[0121] The hole control layer (HCL) can be disposed on the first electrode (AE) and the pixel definition layer (PDL). The hole control layer (HCL) may include a hole transport layer and a hole injection layer.

[0122] The emission layer EML can be disposed on the hole control layer HCL. The emission layer EML can be disposed in the region corresponding to the opening OP. The emission layer EML can include organic and / or inorganic materials. The emission layer EML can emit one of red, green and blue light.

[0123] An electron control layer (ECL) can be disposed on the emitter layer (EML) and the hole control layer (HCL). The ECL may include an electron transport layer and an electron injection layer. The hole control layer (HCL) and the ECL can be jointly disposed in the emitting region (LA) and the non-emitting region (NLA).

[0124] The second electrode CE can be disposed on the electronic control layer ECL. The second electrode CE can be disposed on each pixel PX. The layer on which the light-emitting element OLED is disposed can be defined as the display element layer.

[0125] A thin-film encapsulation layer (TFE) may be disposed on the second electrode (CE) to cover the pixel (PX). The thin-film encapsulation layer (TFE) may include a first encapsulation layer (EN1) disposed on the second electrode (CE), a second encapsulation layer (EN2) disposed on the first encapsulation layer (EN1), and a third encapsulation layer (EN3) disposed on the second encapsulation layer (EN2).

[0126] Each of the first encapsulation layer EN1 and the third encapsulation layer EN3 may include an inorganic insulating layer to protect the pixel PX from moisture / oxygen. The second encapsulation layer EN2 may include an organic insulating layer to protect the pixel PX from foreign matter such as dust particles.

[0127] A first voltage can be applied to the first electrode AE ​​via transistor TR, and a second voltage having a lower level than the first voltage can be applied to the second electrode CE. Holes and electrons injected into the emitter layer EML couple with each other to form excitons, and the light-emitting element OLED emits light when the excitons transition to the ground state.

[0128] Figure 8 To connect Figure 5 The image shows a view of the head's lifting platform.

[0129] refer to Figure 6 and Figure 8 In one embodiment, the lifting device LFA connected to the processing chamber PCH can be connected to the lifting frame CRN. The lifting frame CRN can be connected to the head HDP of the lifting device LFA.

[0130] The lifting frame CRN can move up and down (e.g., on the third direction DR3). As the lifting frame CRN moves upward, the lifting device LFA can also move upward. Figure 8 The lifting frame CRN illustrated can be a hook for the lifting frame CRN. Because the lifting frame CRN is connected to the head HDP, the lifting frame CRN can be connected to the central portion CTP of the mainboard MPT. Therefore, the lifting frame CRN can apply external force to the central portion CTP of the mainboard MPT.

[0131] Figures 9A to 9C The following is a view illustrating the separation operation of the upper chamber of the lifting device using this utility model.

[0132] For ease of illustration and description, Figures 9A to 9C In this diagram, the lifting device LFA and the processing chamber PCH are shown in a simplified manner compared to the previously described structure.

[0133] refer to Figure 9A In a chemical vapor deposition (FAC) plant where the chemical vapor deposition process is performed, multiple processing chambers (PCHs) and multiple drive units (DDVs) disposed below the processing chambers (PCHs) can be provided. The drive units (DDVs) can be configured with various components that control the operations performed in the processing chambers (PCHs), such as the aforementioned vacuum pumps and vertical movement units (VMVs).

[0134] The lifting frame CRN can be connected to the ceiling CEL of the factory FAC. The drive unit DDV can be installed on the bottom BTM of the factory FAC.

[0135] The lifting frame CRN can be connected to the head HDP of the lifting device LFA. The lifting device LFA can be connected to the upper chamber UCH of the treatment chamber PCH, where the contaminated nozzles SH are located inside the treatment chamber PCH.

[0136] refer to Figure 9B The lifting frame CRN can lift the lifting device LFA upwards, and the lifting device LFA can lift the upper chamber UCH. The upper chamber UCH can be separated from the lower chamber LCH and moved upwards via the lifting device LFA. The separated upper chamber UCH can be moved in the first direction DR1 for replacement. The upper chamber UCH can be moved higher than the other processing chamber PCH and can be moved in the first direction DR1.

[0137] refer to Figure 9CThe new upper chamber N-UCH can be connected to the lifting device LFA. New nozzles can be installed inside the new upper chamber N-UCH. The lifting frame CRN can move the lifting device LFA and the new upper chamber N-UCH onto the lower chamber LCH. Afterwards, the new upper chamber N-UCH can be moved downwards towards the lower chamber LCH via the lifting frame CRN and the lifting device LFA. Therefore, the new upper chamber N-UCH can be connected to the lower chamber LCH.

[0138] Figures 10A to 10C Here is a view showing the deformation state of the comparison motherboard according to the external force applied to the center part of the comparison motherboard.

[0139] refer to Figure 10A , Figure 10B and Figure 10C The comparison motherboard MPT' may have a predetermined thickness. When using a lifting device that includes the comparison motherboard MPT' instead of the motherboard MPT according to an embodiment of the present invention, referring to the separation operation of the upper chamber UCH described above, the lifting frame CRN may apply external force to the central portion of the comparison motherboard MPT'.

[0140] When the central portion of the comparator motherboard MPT' is lifted upward, the comparator motherboard MPT' can deform. Since the central portion of the comparator motherboard MPT' is located above the opposite sides of the comparator motherboard MPT' in the deformed state, the comparator motherboard MPT' can have an upwardly curved shape.

[0141] Accordingly, stress can occur on the comparison motherboard MPT' based on the deformation of the comparison motherboard MPT'. The amount of deformation of the comparison motherboard MPT' is defined as the distance between the lowest and highest points of the deformed comparison motherboard MPT', and is referred to below as the first deformation amount ΔD1.

[0142] Stress can be defined as the internal resistance, deformation force, or internal force that occurs within a material when an external force is applied to it. Stress and strain are directly proportional. In other words, the greater the strain, the greater the stress.

[0143] The relatively thin comparator motherboard MPT' can deform significantly upwards under the force applied to its central portion. As the deformation of the comparator motherboard MPT' increases, the external force applied to it also increases, potentially increasing the likelihood of damage. Therefore, when using... Figures 10A to 10C When the comparison motherboard MPT' shown in the figure is used to improve the upper chamber UCH, the comparison motherboard MPT' may be damaged.

[0144] The thicker an object is, the less it deforms, and the lower the stress. To prevent the aforementioned damage, a lifting plate with relatively large thickness can be used. However, the following problems may arise in this case.

[0145] Figure 11A and Figure 11B Here is a view illustrating the separation operation of the upper chamber using a comparative lifting device.

[0146] In particular, Figure 11A and Figure 11B Example corresponding to Figures 9A to 9B Side view.

[0147] The following text will mainly focus on the relationship with Figure 9A and Figure 9B The different configuration aspects shown in the diagram are described. Figure 11A and Figure 11B The configuration shown in the image.

[0148] refer to Figure 11A and Figure 11B The lifting device LFA' may include a lifting plate LPT disposed on the outrigger LGP. The lifting plate LPT may have a thickness greater than that of the main board MPT' and the main board MPT described above.

[0149] The head HDP can be mounted on and connected to the lifting plate LPT. The lifting frame CRN can raise the head HDP, allowing the lifting plate LPT to move upwards. However, as the thickness of the lifting plate LPT increases, the space available for upward movement can be limited. For example, when using... Figure 11A The comparison lifting device LFA' shown in the image is not... Figure 9A In one embodiment of the lifting device LFA shown, the lifting height can be relatively low.

[0150] Therefore, when the lifting frame CRN and the comparison lifting device LFA' transfer the upper chamber UCH that is separated from the lower chamber LCH in the first direction DR1, the upper chamber UCH being transferred may collide with another processing chamber PCH.

[0151] Figures 12A to 12C This is a view illustrating the deformation state of a motherboard according to an embodiment of the present invention due to an external force applied to the central portion of the motherboard.

[0152] refer to Figure 12A As mentioned above, the thickness of the central portion (CTP) of the motherboard MPT can be greater than the thickness of the two opposite portions of the motherboard MPT. Therefore, the weight of the central portion (CTP) of the motherboard MPT can be greater than the weight of the other portions of the motherboard MPT.

[0153] Because the central CTP portion is heavier, the central CTP portion of the motherboard MPT can sag downwards due to gravity. Figure 1 and Figure 3In the illustration, for ease of depiction, the motherboard MPT is shown in a horizontal position; however, essentially, the motherboard MPT may have a shape that bends downwards due to the weight of its central portion, the CTP. In other words, the motherboard MPT can be linearly deformed and positioned on the processing chamber PCH. Essentially, the linearly deformed motherboard MPT can be connected to the upper chamber UCH.

[0154] refer to Figure 12B and Figure 12C The lifting frame CRN can apply external force to the central part CTP of the motherboard MPT. As the central part CTP of the motherboard MPT is lifted upward, the motherboard MPT can deform.

[0155] In one embodiment, when the central portion CTP of the motherboard MPT is lifted upward, the motherboard MPT undergoes linear deformation to bend downward, thereby reducing the amount of upward bending deformation. In this embodiment, the amount of upward bending deformation of the motherboard MPT is reduced because it is offset by the pre-deformation deformation of the motherboard MPT.

[0156] refer to Figure 12C The deformation of the motherboard MPT is defined as the distance between the lowest and highest points of the deformed motherboard MPT, and is referred to as the second deformation ΔD2 below.

[0157] refer to Figure 10C and Figure 12C In the final deformed state, the second deformation amount △D2 of the motherboard MPT can be less than the first deformation amount △D1 of the comparison motherboard MPT'.

[0158] As mentioned above, the greater the deformation of an object, the greater the stress within it, and the higher the likelihood of damage to the object. Because the second deformation amount ΔD2 of the mainboard MPT is smaller than the first deformation amount ΔD1 of the comparison mainboard MPT', damage to the mainboard MPT can be significantly reduced or effectively prevented during the operation of lifting the upper chamber UCH using the mainboard MPT.

[0159] In one embodiment of this utility model, because it uses a component having a ratio Figure 11A and Figure 11B The lifting plate LPT shown in the figure has a smaller thickness than the main board MPT lifting device LFA, and the upper chamber UCH can be further transferred to a higher position, such as... Figure 9A and Figure 9B As shown in the diagram. Furthermore, in one embodiment of this invention, because the deformation of the motherboard MPT due to the external force applied to its central portion CTP is reduced, damage to the motherboard MPT can be reduced. As a result, damage to the lifting device LFA can be reduced.

[0160] Figure 13 Example Figure 3 The image shows a view illustrating the stress distribution state of the connecting unit and auxiliary plate. Figure 14 For example, the stress is in Figure 4 A magnified view of the scattered state.

[0161] For example, Figure 13 An enlarged view of a portion of the main board MPT and a portion of the auxiliary board SPT adjacent to the central portion of the lifting device LFA is shown.

[0162] refer to Figure 13 and Figure 14 As described above, when the lifting frame CRN applies external force to the central part CTP of the motherboard MPT, the motherboard MPT can bend upward, and the stress can occur on the central part CTP of the motherboard MPT.

[0163] like Figure 13 As shown by the dashed arrow, the stress generated in the central portion CTP of the mainboard MPT can be dispersed along the connecting unit CU and the auxiliary board SPT. Additionally, as... Figure 14 As shown by the dashed arrows, the stress generated in the mainboard MPT can be dispersed along the connecting unit CU, auxiliary board SPT, side connecting part SCP, and the tube-shaped second connecting part CNP2. Therefore, the stress is not concentrated in one area but is dispersed, which further reduces damage to the mainboard MPT.

[0164] As a result, in one embodiment of this invention, the deformation of the mainboard MPT due to the external force applied to the central portion CTP of the mainboard MPT can be reduced, and the stress on the mainboard MPT can be dispersed through the connecting unit CU and the auxiliary plate SPT. According to this structure, the stiffness of the lifting device LFA is enhanced, which reduces damage to the lifting device LFA.

[0165] Figure 15 Here is a view illustrating the configuration of a lifting device according to another embodiment of the present invention. Figure 16 The following is a view illustrating the deformation state of the main board, auxiliary board, and dummy auxiliary board during the lifting operation of the upper chamber.

[0166] For example, Figure 15 Examples and Figure 3 The corresponding cross-section, and will focus primarily on the... Figure 3 The different configurations shown in the diagram are used to describe... Figure 15 The configuration is shown in the diagram. Additionally, for ease of illustration, in... Figure 15 The diagram in the middle is more than the standard. Figure 3 The diagram shows a small number of connection units (CUs). For example, in... Figure 16 The following is a brief illustration of the mainboard MPT-1, the reinforcement board RFP, the auxiliary board SPT, and the virtual auxiliary board D-SPT, while omitting other configurations.

[0167] refer to Figure 15 One embodiment of the lifting device LFA-1 may further include a dummy auxiliary board D-SPT disposed under the main board MPT-1 and a reinforcing board RFP disposed under the main board MPT-1. The dummy auxiliary board D-SPT can be connected to the main board MPT-1 via a connection unit CU.

[0168] The mainboard MPT-1 can be disposed between the auxiliary board SPT and the dummy auxiliary board D-SPT. The mainboard MPT-1 can be spaced apart from the auxiliary board SPT and the dummy auxiliary board D-SPT on the third-direction DR3. The mainboard MPT-1 can be disposed at the center of the area between the auxiliary board SPT and the dummy auxiliary board D-SPT. In one embodiment, for example, the first gap GP1 between the mainboard MPT-1 and the auxiliary board SPT on the third-direction DR3 can be the same as the second gap GP2 between the mainboard MPT-1 and the dummy auxiliary board D-SPT on the third-direction DR3.

[0169] The first side portion SP1 of the mainboard MPT-1 can be disposed between the first connecting portion CNP1 and the second connecting portion CNP2, and can be connected to the first connecting portion CNP1 and the second connecting portion CNP2. The second side portion SP2 of the auxiliary board SPT can be bent upward to connect to the inner surface of the second connecting portion CNP2.

[0170] The opposite sides of the reinforcing plate RFP in the first direction DR1 can be spaced apart from the opposite sides of the main board MPT-1 in the first direction DR1, and therefore can be disposed below the main board MPT-1. The reinforcing plate RFP can overlap with the center portion CTP of the main board MPT-1. The edge of the reinforcing plate RFP can be adjacent to the center portion CTP, rather than adjacent to the corresponding side of the main board MPT-1. That is, the edge of the reinforcing plate RFP can be closer to the center portion CTP than the corresponding side of the main board MPT-1.

[0171] The reinforcing plate RFP can contact the bottom surface of the motherboard MPT-1 and can also be connected to the motherboard MPT-1. The reinforcing plate RFP can be connected to the motherboard MPT-1 via the connection unit CU. Depending on the weight of the reinforcing plate RFP, such as... Figure 12A As shown, the motherboard MPT-1 can deform linearly to droop downwards.

[0172] refer to Figure 16 The head HDP can be lifted upwards via the aforementioned lifting frame CRN. In this case, the main board MPT-1, auxiliary board SPT, and dummy auxiliary board D-SPT can deform to bend upwards.

[0173] As indicated by the arrows in the diagram, tensile stress can occur in the auxiliary plate SPT, and compressive stress can occur in the dummy auxiliary plate D-SPT. However, in the main plate MPT-1, located at the center of the region between the auxiliary plate SPT and the dummy auxiliary plate D-SPT, the tensile and compressive stresses can cancel each other out. In this case, the internal stress of the main plate MPT-1 can be minimized. Furthermore, the stress on the main plate MPT-1 can be dispersed through the connecting unit CU, the auxiliary plate SPT, and the dummy auxiliary plate D-SPT. Therefore, damage to the main plate MPT-1 can be reduced.

[0174] According to one embodiment of the present invention, the lifting device may include a main board having a thick central portion and a thinner side portion, an auxiliary board disposed on the main board, and a connecting unit connecting the main board and the auxiliary board to each other.

[0175] In this embodiment, when the upper chamber connected to the main board is lifted upwards, the deformation of the main board due to the external force applied to its central portion is reduced because of the main board's structure, and the stress on the main board can be dispersed through the connecting unit and auxiliary plate. Therefore, the rigidity of the lifting device is enhanced, which reduces the deterioration of the lifting device.

[0176] This invention should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

[0177] Although the present invention has been specifically shown and described with reference to embodiments thereof, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit or scope of the present invention as defined by the claims.

Claims

1. A lifting device, characterized in that, include: Motherboard; An auxiliary board is mounted on the mainboard. Multiple connection units, the multiple connection units being configured to connect the motherboard to the auxiliary board; Multiple support legs are adjacent to the opposite sides of each of the main board and the auxiliary board and extend downward; The head, connected to the motherboard, protrudes upward; Multiple connecting posts connect to the motherboard and extend downwards; as well as A support ring is connected to the lower end of the plurality of connecting posts.

2. The lifting device according to claim 1, characterized in that, The motherboard and the auxiliary board extend longer in the first direction than in the second direction intersecting the first direction, and When viewed in a plane defined by the first direction and the second direction, the head and the connecting post are connected to the central portion of the motherboard.

3. The lifting device according to claim 2, characterized in that, The central portion has a thickness greater than that of each of the two opposite side portions of the motherboard that are opposite to each other in the first direction.

4. The lifting device according to claim 3, characterized in that, The thickness of the motherboard gradually increases from its opposite side portion toward the center portion.

5. The lifting device according to claim 3, characterized in that, The plurality of connecting units extend in a vertical direction perpendicular to the plane.

6. The lifting device according to claim 2, characterized in that, When viewed on the plane, the plurality of connecting posts are adjacent to and surround the head.

7. The lifting device according to claim 2, characterized in that, The plurality of connection units are disposed between the central portion and the edge of the motherboard.

8. The lifting device according to claim 7, characterized in that, The plurality of connection units are distributed in the area between the central portion and the edge of the motherboard.

9. The lifting device according to claim 2, characterized in that, The lower portion of the head is disposed in a groove defined in the central portion.

10. The lifting device according to claim 9, characterized in that, The width of the lower portion of the head gradually increases downward in the first direction.

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