masking device

Abstract

The utility model provides mask device has: frame, it contains frame first surface, and the frame second surface of opposite side of frame first surface, and mask, it contains the second surface of frame first surface, the first surface of opposite side of second surface, a plurality of through -hole from the first surface reaches the second surface, and a plurality of welding portion welded in frame first surface, welding portion has 0.0 above first ratio alpha and 0.0 above second ratio beta, first ratio alpha and second ratio beta are expressed by following formula: alpha = H12 / H34, beta = H12 / H24, H12 = H1 - H2, H24 = H2 - H4, H34 = H3 - H4, H1, H2, H3, H4 are respectively along the average value of the height of the surface of welding portion measured to first, second, third, fourth imaginary circle's outline, the ratio of second ratio beta and first ratio alpha is 0.025 above and 0.150 below.

Description

[0001] This utility model is a divisional application of Chinese utility model application filed on June 21, 2024, entitled "Mask Device", with application number 202421437176.9. Technical Field

[0002] Embodiments of this disclosure relate to masking devices. Background Technology

[0003] Organic devices, such as organic EL display devices, have attracted attention. As a method for forming elements of organic devices, a method is known to attach the material constituting the element to a substrate by vapor deposition. For example, firstly, a substrate with a first electrode formed in a pattern corresponding to the element is prepared. Next, a vapor deposition process is performed using a mask apparatus. The mask apparatus includes a mask containing through-holes and a frame supporting the mask. Organic material passing through the through-holes of the mask is attached to the first electrode, thereby forming an organic layer on the first electrode.

[0004] The frame includes a first side and a second side to which the end of the mask is fixed. The first side and the second side are opposed to each other in a first direction through an opening. The frame supports the mask in a state of applying tension to the mask in the first direction. This suppresses the deflection of the mask.

[0005] Patent Document 1: International Publication No. 2019 / 049600 Utility Model Content

[0006] In the method for manufacturing a mask assembly, multiple masks are sequentially welded to the first and second sides of a frame while a pressing force is applied to the first and second sides in the direction toward the opening. Each mask is welded to the first and second sides of the frame while tension is applied to the mask. Each mask includes multiple welded portions formed by welding. After the mask is fixed to the frame, the pressing force is removed. After the pressing force is removed, an elastic restoring force is generated on the first and second sides of the frame, resulting in tension being applied to the mask even after it has been fixed to the frame.

[0007] Around the welded area, undulations may sometimes occur on the mask surface. If the effects of these undulations extend to the through-holes of the mask, the position of the through-holes may sometimes deviate from the target position.

[0008] One embodiment of the mask device disclosed herein may include: a frame comprising a first frame surface and a second frame surface located opposite to the first frame surface; and a mask comprising a second surface facing the first frame surface, a first surface located opposite to the second surface, a plurality of through holes extending from the first surface to the second surface, and a plurality of welded portions welded to the first frame surface. The welded portions may have a size of 6.0 × 10⁻⁶. -6 N / μm2 The above refers to the unit peel strength. The unit peel strength is calculated by dividing the peel strength by the area of ​​the weld in top view. The peel strength is the magnitude of the force required to peel the weld from the first surface of the frame by stretching the end of the mask along the normal direction of the first surface of the frame.

[0009] According to embodiments of this disclosure, it is possible to suppress undulations on the mask surface around the weld portion. Attached Figure Description

[0010] Figure 1 This is a cross-sectional view showing an example of an organic device.

[0011] Figure 2 This is a top view showing an example of an organic device group.

[0012] Figure 3 This is a cross-sectional view showing an example of a vapor deposition apparatus.

[0013] Figure 4 This is a top view showing an example of a mask assembly.

[0014] Figure 5 This is a top view showing an example of a mask.

[0015] Figure 6 This is a cross-sectional view showing an example of a mask.

[0016] Figure 7 This is a top view showing the mask magnified.

[0017] Figure 8 This is a top view showing an example of multiple welded sections.

[0018] Figure 9A This is a top view showing the welded area after magnification.

[0019] Figure 9B This is a top view showing the measurement location of the surface roughness of the welded part.

[0020] Figure 9C This is a diagram illustrating an example of the relationship between β / α and the shape of the cross-section of the weld.

[0021] Figure 10A It shows along Figure 8 A diagram of an example of the cross-section of the welded portion of the second straight line.

[0022] Figure 10B It shows along Figure 8 A diagram of an example of the cross-section of the welded portion of the second straight line.

[0023] Figure 10C It shows along Figure 8 A diagram of an example of the cross-section of the welded portion of the second straight line.

[0024] Figure 10D It shows along Figure 8 A diagram of an example of the cross-section of the welded portion of the second straight line.

[0025] Figure 11 This is a top view showing an example of a mask manufacturing apparatus.

[0026] Figure 12 This is a graph showing an example of the intensity distribution of a single-mode laser.

[0027] Figure 13 This is a top view showing an example of the intensity distribution of a laser beam.

[0028] Figure 14 This is a graph showing an example of the intensity distribution of a multimode laser.

[0029] Figure 15 This is a top view showing an example of the pressing process.

[0030] Figure 16 This is a top view showing an example of the adjustment process.

[0031] Figure 17 This is a top view showing an example of a fixed process.

[0032] Figure 18 This is a diagram illustrating an example of the process of forming a weld.

[0033] Figure 19 This is a top view showing a sample used to measure peel strength.

[0034] Figure 20 This is a diagram illustrating the method for measuring peel strength.

[0035] Figure 21 This is a diagram illustrating a method for manufacturing a mask assembly.

[0036] Figure 22A This is a diagram showing the welded portion of Example 1.

[0037] Figure 22B This is a diagram showing the surface height profile of the welded part in Example 1.

[0038] Figure 22C This is a graph showing the surface height profile of the welded part in Example 1.

[0039] Figure 23A This is a diagram showing the welded portion of Example 2.

[0040] Figure 23B This is a diagram showing the surface height profile of the welded portion in Example 2.

[0041] Figure 23C This is a graph showing the surface height profile of the welded part in Example 2.

[0042] Figure 24A This is a diagram showing the welded portion of Example 3.

[0043] Figure 24B This is a diagram showing the surface height profile of the welded portion in Example 3.

[0044] Figure 24C This is a graph showing the surface height profile of the welded part in Example 3.

[0045] Figure 25A This is a diagram showing the welded portion of Example 4.

[0046] Figure 25B This is a diagram showing the surface height profile of the welded portion in Example 4.

[0047] Figure 25C This is a graph showing the surface height profile of the welded part in Example 4.

[0048] Figure 26A This is a diagram showing the welded portion of Example 5.

[0049] Figure 26B This is a diagram showing the surface height profile of the welded portion in Example 5.

[0050] Figure 26C This is a graph showing the surface height profile of the welded part in Example 5.

[0051] Figure 27A This is a diagram showing the welded portion of Example 6.

[0052] Figure 27B This is a diagram showing the surface height profile of the welded portion in Example 6.

[0053] Figure 27C This is a graph showing the surface height profile of the welded part in Example 6.

[0054] Figure 28A This is a diagram showing the measurement path of the surface profile of the sample around the welded part in Example 2.

[0055] Figure 28B It is a graph showing the surface profile of the sample around the welded part in Example 2.

[0056] Figure 29A This is a diagram showing the measurement path of the surface profile of the sample around the welded part in Example 3.

[0057] Figure 29BIt is a graph showing the surface profile of the sample around the welded part in Example 3.

[0058] Figure 30A This is a diagram showing the measurement path of the surface profile of the sample around the welded part in Example 6.

[0059] Figure 30B It is a graph showing the surface profile of the sample around the welded part in Example 6.

[0060] Figure 31 It is a diagram showing the dimensions of the weld, the measurement results of the peel strength, etc.

[0061] Figure 32 It is a graph showing the relationship between the size of the weld and the unit peel strength.

[0062] Figure 33 It is a graph showing the relationship between the dimensions of the welded part and its strength parameters.

[0063] Figure 34 This is a graph showing the evaluation results for the first and second ratios.

[0064] Figure 35 This is a diagram illustrating an example of the shape of a laser pulse.

[0065] Figure 36A This is a diagram showing the welded portion of Example A1.

[0066] Figure 36B This is a diagram showing the surface height profile of the welded portion in Example A1.

[0067] Figure 36C This is a graph showing the surface height profile of the welded part in Example A1.

[0068] Figure 37A This is a diagram showing the welded portion of Example A5.

[0069] Figure 37B This is a diagram showing the surface height profile of the welded portion in Example A5.

[0070] Figure 37C This is a graph showing the surface height profile of the welded part in Example A5.

[0071] Figure 38 It is a diagram showing the dimensions of the weld, the measurement results of the peel strength, etc. Detailed Implementation

[0072] In this specification and accompanying drawings, unless otherwise specified, the terms "substrate," "material," "plate," "sheet," "film," etc., which refer to the material that forms the basis of a structure, are used only as different names and are not distinguished from each other.

[0073] In this specification and accompanying drawings, unless otherwise specified, terms such as “parallel” or “orthogonal”, or values ​​of length and angle, which define shape and geometry, are not strictly defined and are interpreted to include the extent to which the same function can be expected.

[0074] In this specification and accompanying drawings, unless otherwise specified, the terms "above," "below," "upper side," "lower side," or "above" or "below" are used to refer to the following situations: a structure of a component or region is located "above," "below," "on the upper side," "below," or "above" or "below" other structures of other components or regions; and a structure is directly connected to another structure. Furthermore, this also includes situations where another structure is indirectly connected to another structure. Additionally, unless otherwise specified, the "above," "upper side," "above," or "below," "lower side," "below" terms may be used with the up / down direction reversed.

[0075] In this specification and accompanying drawings, unless otherwise specified, the same or similar reference numerals are used to denote the same parts or parts with the same function, and sometimes repeated descriptions are omitted. Additionally, for ease of explanation, the dimensional ratios in the drawings may sometimes differ from the actual ratios, and sometimes a part of the structure may be omitted from the drawings.

[0076] Unless otherwise specified, in this specification and accompanying drawings, one embodiment of this specification may be combined with other embodiments without creating contradictions. Furthermore, other embodiments may also be combined with each other without creating contradictions.

[0077] Unless otherwise specified in this specification and accompanying drawings, when multiple steps are disclosed in a manufacturing method or other similar procedure, other undisclosed steps may be performed between the disclosed steps. Furthermore, the order of the disclosed steps is arbitrary as long as it does not create contradictions.

[0078] In this specification and accompanying drawings, unless otherwise specified, the numerical ranges expressed by symbols such as “~” include the numerical values ​​placed before and after the “~” symbol. For example, the numerical range defined by expressions such as “34 to 38% by mass” is the same as the numerical range defined by expressions such as “more than 34% by mass and less than 38% by mass”.

[0079] In one embodiment of this specification, examples of masks used to pattern organic materials or electrodes on a substrate in a desired pattern during the manufacture of an organic EL display device and their manufacturing methods are described. However, this embodiment is not limited to such applications, and can be applied to masks for various purposes. For example, the mask of this embodiment can be used to form electrodes for devices used to represent or project images or videos for displaying virtual reality (so-called VR) or augmented reality (so-called AR). Furthermore, the mask of this embodiment can be used to form electrodes for display devices other than organic EL display devices, such as electrodes for liquid crystal display devices. Additionally, the mask of this embodiment can be used to form electrodes for organic devices other than display devices, such as electrodes for pressure sensors.

[0080] The first aspect of this disclosure is a method for manufacturing a mask device, wherein...

[0081] The method for manufacturing the mask device includes:

[0082] The process of preparing a frame, the frame comprising a first frame surface and a second frame surface located opposite the first frame surface; and

[0083] In the welding process, a mask is welded to the first surface of the frame. The mask includes a second surface facing the first surface of the frame, a first surface located on the opposite side of the second surface, and a plurality of through holes extending from the first surface to the second surface.

[0084] The welding process includes an irradiation process in which a plurality of weld portions are formed on the mask by irradiating the first surface with a single-mode laser.

[0085] The second aspect of this disclosure can also be that, in the manufacturing method of the mask device of the first aspect described above, the laser has a Gaussian intensity distribution.

[0086] The third aspect of this disclosure can also be that, in the manufacturing method of the mask device of the first or second aspect described above, the laser has a beam quality factor M of 1.10 or less. 2 .

[0087] The fourth aspect of this disclosure may also be that, in the manufacturing method of the mask device of any of the first to third aspects described above, the laser has a spot diameter of less than 200 μm on the first surface.

[0088] The fifth aspect of this disclosure may also be that, in the manufacturing method of the mask device of the fourth aspect described above, the laser has a theoretical beam diameter of 80 μm or less.

[0089] The sixth aspect of this disclosure may also be a method for manufacturing a mask apparatus in any of the first to fifth aspects described above, wherein the laser is a fiber laser.

[0090] The seventh aspect of this disclosure may also be a method for manufacturing a mask apparatus in any of the first to sixth aspects described above, wherein the mask has a thickness of 30 μm or less.

[0091] The eighth aspect of this disclosure may also be a method for manufacturing a mask device in any of the first to seventh aspects described above, wherein the through hole has a size of 50 μm or less when viewed from above.

[0092] The ninth aspect of this disclosure may also be a method for manufacturing a mask device in any of the first to eighth aspects described above, wherein the frame may include: a first side and a second side opposed in a first direction with an opening between them; and a third side and a fourth side opposed in a second direction intersecting the first direction with the opening between them. The mask may include: a first end welded to the first side; a second end welded to the second side; and an intermediate portion located between the first end and the second end, wherein the intermediate portion may include a plurality of through holes arranged in the first direction, and the through hole group may include a plurality of through holes.

[0093] The tenth aspect of this disclosure may also be that, in the manufacturing method of the mask device of the ninth aspect described above, the welding process may include a process of applying tension to the mask in the first direction, and in the irradiation process, the first surface of the mask under tension may be irradiated with the laser.

[0094] The eleventh aspect of this disclosure can also be, in the manufacturing method of the mask device of any of the first to tenth aspects described above, wherein the welded portion is formed to have a size of 6.0 × 10. -6 N / μm 2 The above refers to the unit peel strength. The unit peel strength is calculated by dividing the peel strength of the weld by the area of ​​the weld when viewed from above.

[0095] The 12th aspect of this disclosure can also be that, in the manufacturing method of the mask device of the 11th aspect described above, the value obtained by dividing the dimension of the welded portion in top view by the unit peel strength is 30.0 × 10⁻⁶. 6 μm 3 / N and below.

[0096] The 13th aspect of this disclosure may also be that, in the manufacturing method of the mask device of the 9th aspect described above, the plurality of welded portions are arranged at a spacing of 500 μm or less in the second direction.

[0097] The 14th aspect of this disclosure is a mask device, wherein...

[0098] The mask device includes:

[0099] A frame, comprising a first frame surface and a second frame surface located opposite the first frame surface; and

[0100] A mask comprising a second surface facing the first surface of the frame, a first surface located on the opposite side of the second surface, a plurality of through holes extending from the first surface to the second surface, and a plurality of welded portions welded to the first surface of the frame.

[0101] The welded part has a size of 6.0 × 10 -6 N / μm 2 The above unit peel strength,

[0102] The unit peel strength is calculated by dividing the peel strength by the area of ​​the weld when viewed from above.

[0103] The peel strength is the magnitude of the force required to peel the weld from the first surface of the frame by stretching the end of the mask along the normal direction of the first surface of the frame.

[0104] The 15th aspect of this disclosure can also be that, in the mask apparatus of the 14th aspect described above, the value obtained by dividing the dimension of the welded portion in top view by the unit peel strength is 30.0 × 10⁻⁶. 6 μm 3 / N and below.

[0105] The 16th aspect of this disclosure may also be that, in the mask device of the 14th or 15th aspect described above, the weld portion has a size of less than 250 μm when viewed from above.

[0106] The 17th aspect of this disclosure may also be a mask device in any of the 14th to 16th aspects described above, wherein the weld portion has a first ratio α of 0.0 or more and a second ratio β of 0.0 or more. The first ratio α and the second ratio β are expressed by the following formula.

[0107] α=H12 / H34

[0108] β=H12 / H24

[0109] H12 = H1 - H2

[0110] H24 = H2 - H4

[0111] H34 = H3 - H4

[0112] H1 is the average height of the welded portion's surface measured along the contour of the first imaginary circle. The first imaginary circle is an imaginary circle having a diameter equal to 0.25 times the size of the welded portion in top view and having a center point identical to the center point of the welded portion. H2 is the average height of the welded portion's surface measured along the contour of the second imaginary circle. The second imaginary circle is an imaginary circle having a diameter equal to 0.50 times the size of the welded portion in top view and having a center point identical to the center point of the welded portion. H3 is the average height of the welded portion's surface measured along the contour of the third imaginary circle. The third imaginary circle is an imaginary circle having a diameter equal to 0.90 times the size of the welded portion in top view and having a center point identical to the center point of the welded portion. H4 is the average height of the welded portion's surface measured along the contour of the fourth imaginary circle. The fourth imaginary circle is an imaginary circle having a diameter equal to the size of the welded part when viewed from above, and having a center point that is the same as the center point of the welded part.

[0113] The 18th aspect of this disclosure may also be that, in the mask apparatus of the 17th aspect described above, the ratio of the second ratio to the first ratio is 0.025 or more.

[0114] The 19th aspect of this disclosure may also be that, in the mask apparatus of the 17th or 18th aspect described above, the ratio of the second ratio to the first ratio is 0.150 or less.

[0115] The 20th aspect of this disclosure may also be that, in any of the mask devices of the 14th to 19th aspects described above, the welded portion has a roundness of less than 10 μm.

[0116] The 21st aspect of this disclosure may also be that, in any of the 14th to 20th aspects of the mask apparatus described above, the mask has a thickness of 30 μm or less.

[0117] The 22nd aspect of this disclosure may also be that, in any of the 14th to 21st aspects of the mask device described above, the through hole has a size of less than 50 μm when viewed from above.

[0118] The 23rd aspect of this disclosure can also be a mask device in any of the 14th to 22nd aspects described above, wherein the frame may include: a first side and a second side opposed in a first direction with an opening between them; and a third side and a fourth side opposed in a second direction intersecting the first direction with the opening between them. The mask may include: a first end welded to the first side; a second end welded to the second side; and an intermediate portion located between the first end and the second end, wherein the intermediate portion may include a plurality of through holes arranged in the first direction, and the through hole group may include a plurality of through holes.

[0119] The embodiments of this disclosure are described in detail with reference to the accompanying drawings. Furthermore, the embodiments shown below are examples of embodiments of this disclosure, and this disclosure is not limited to these embodiments.

[0120] An organic device 100 having elements formed by using a mask will be described. Figure 1 This is a cross-sectional view showing an example of an organic device 100.

[0121] Organic device 100 includes: a substrate 110 comprising a first surface 111 and a second surface 112; and a plurality of elements 115 located on the first surface 111 of the substrate 110. Elements 115 are, for example, pixels. Elements 115 may also be arranged in an in-plane direction along the first surface 111. The substrate 110 may also include two or more types of elements 115. For example, the substrate 110 may also include a first element 115A and a second element 115B. Although not shown, the substrate 110 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, red pixels, blue pixels, and green pixels.

[0122] Component 115 may include a first electrode 120, an organic layer 130 on the first electrode 120, and a second electrode 140 on the organic layer 130. The element formed by using a mask may be either the organic layer 130 or the second electrode 140. The element formed by using a mask is also referred to as a vapor-deposited layer.

[0123] The organic device 100 may also include an insulating layer 160 located between two adjacent first electrodes 120 when viewed from above. The insulating layer 160 may, for example, comprise polyimide. The insulating layer 160 may also overlap with the ends of the first electrodes 120 when viewed from above.

[0124] Organic device 100 can be an active matrix type. For example, although not shown, organic device 100 can also have switches electrically connected to multiple elements 115 respectively. The switches are, for example, transistors. The switches can control the ON / OFF of voltage or current for the corresponding elements 115.

[0125] The substrate 110 can also be an insulating plate-shaped component. Preferably, the substrate 110 is transparent, allowing light to pass through. Materials used for the substrate 110 include, for example, rigid materials without flexibility such as quartz glass, Pyrex glass, or synthetic quartz sheets, or flexible materials such as resin films, optical resin sheets, or thin glass. Alternatively, the substrate can be a laminate with barrier layers on one or both sides of the resin film.

[0126] The element 115 is configured to perform a certain function by applying a voltage between the first electrode 120 and the second electrode 140, or by flowing a current between the first electrode 120 and the second electrode 140. For example, if the element 115 is a pixel of an organic EL display device, the element 115 can emit light that constitutes an image.

[0127] The first electrode 120 comprises a conductive material. For example, the first electrode 120 comprises a metal, a conductive metal oxide, or other conductive inorganic materials. The first electrode 120 may also comprise a transparent and conductive metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0128] Organic layer 130 contains organic materials. When an electric current flows through organic layer 130, organic layer 130 can perform a certain function. As organic layer 130, a light-emitting layer that emits light when an electric current passes through it can be used. Organic layer 130 may contain organic semiconductor materials. The transmittance, refractive index, and other properties of organic layer 130 can be appropriately adjusted.

[0129] like Figure 1 As shown, organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is contained in a first element 115A. The second organic layer 130B is contained in a second element 115B. Although not shown, organic layer 130 may also include a third organic layer contained in a third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0130] When a voltage is applied between the first electrode 120 and the second electrode 140, current flows through the organic layer 130. If the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130, and the light is extracted to the outside from either the side of the second electrode 140 or the side of the first electrode 120.

[0131] The organic layer 130 may also include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, etc.

[0132] The second electrode 140 comprises a conductive material such as a metal. The second electrode 140 is formed on the organic layer 130 using a mask vapor deposition method. Materials constituting the second electrode 140 may include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, indium tin oxide (ITO), indium zinc oxide (IZO), carbon, etc. These materials may be used individually or in combination of two or more. When using two or more materials, layers composed of each material can be stacked. Alternatively, alloys containing two or more materials may be used. For example, magnesium alloys such as MgAg, and aluminum alloys such as AlLi, AlCa, and AlMg may be used. MgAg is also referred to as magnesium silver. Magnesium silver is preferably used as the material for the second electrode 140. Alkali metal and alkaline earth metal alloys may also be used. For example, lithium fluoride, sodium fluoride, potassium fluoride, etc., may also be used.

[0133] The second electrode 140 can be a common electrode. For example, the second electrode 140 of one element 115 can also be electrically connected to the second electrode 140 of other elements 115.

[0134] The second electrode 140 may also be composed of a single layer. For example, the second electrode 140 may also be a layer formed by a vapor deposition process using a mask.

[0135] Or, such as Figure 1 As shown, the second electrode 140 may also include a first layer 140A and a second layer 140B. The first layer 140A may also be a layer formed by a vapor deposition process using a first mask. The second layer 140B may also be a layer formed by a vapor deposition process using a second mask. Thus, two or more masks can be used to form the second electrode 140. As a result, the degree of freedom in the pattern of the second electrode 140 when viewed from above increases. For example, the organic device 100 may include regions where the second electrode 140 does not exist when viewed from above. The regions where the second electrode 140 does not exist may have a higher transmittance than the regions where the second electrode 140 exists.

[0136] like Figure 1 As shown, the ends of the first layer 140A and the second layer 140B can partially overlap. This allows for an electrical connection between the first layer 140A and the second layer 140B.

[0137] Although not shown, the second electrode 140 may also include other layers such as a third layer. The third layer and other layers may also be electrically connected to the first layer 140A and the second layer 140B.

[0138] In the following description, when describing the common structure of the second electrode 140, the first layer 140A, the second layer 140B, the third layer, etc., the term "second electrode 140" will be used.

[0139] In the manufacturing method of organic device 100, it is possible to fabricate such as Figure 2 The organic device group 102 is shown. The organic device group 102 includes two or more organic devices 100. For example, the organic device group 102 may also include organic devices 100 arranged along a first direction D1 and a second direction D2. The second direction D2 is a direction intersecting the first direction D1. The second direction D2 may also be orthogonal to the first direction D1. A shared substrate 110 may be used among the two or more organic devices 100. For example, the organic device group 102 may be located on a substrate 110 and include layers such as a first electrode 120, an organic layer 130, and a second electrode 140 constituting two or more organic devices 100. Organic devices 100 are obtained by dividing the organic device group 102.

[0140] As will be described later, the first direction D1 may also be the direction in which the mask used to manufacture the organic device 100 extends.

[0141] The organic device 100 may have a dimension A1 in the first direction D1, for example, greater than or equal to 10 mm, greater than or equal to 30 mm, or greater than or equal to 100 mm. Dimension A1 may also be less than or equal to 200 mm, less than or equal to 500 mm, or less than or equal to 1000 mm. The range of dimension A1 can be determined by a first group consisting of 10 mm, 30 mm, and 100 mm, and / or a second group consisting of 200 mm, 500 mm, and 1000 mm. The range of dimension A1 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of dimension A1 can also be determined by a combination of any two of the values ​​included in the first group. The range of dimension A1 can also be determined by a combination of any two of the values ​​included in the second group. For example, size A1 can be 10mm or more and 1000mm or less, 10mm or more and 500mm or less, 10mm or more and 200mm or less, 10mm or more and 100mm or less, 10mm or more and 30mm or less, 30mm or more and 1000mm or less, 30mm or more and 500mm or less, 30mm or more and 200mm or less, 30mm or more and 100mm or less, 100mm or more and 1000mm or less, 100mm or more and 500mm or less, 100mm or more and 200mm or less, 200mm or more and 1000mm or less, 200mm or more and 500mm or less, 500mm or more and 1000mm or less.

[0142] The size A2 of the organic device 100 in the second direction D2 can be, for example, 10 mm or more, 20 mm or more, or 50 mm or more. The size A2 can also be, for example, less than 100 mm, less than 200 mm, or less than 500 mm. The range of size A2 can be determined by a first group consisting of 10 mm, 20 mm, and 50 mm and / or a second group consisting of 100 mm, 200 mm, and 500 mm. The range of size A2 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of size A2 can also be determined by a combination of any two of the values ​​included in the first group. The range of size A2 can also be determined by a combination of any two of the values ​​included in the second group. For example, size A2 can be 10mm or more and 500mm or less, 10mm or more and 200mm or less, 10mm or more and 100mm or less, 10mm or more and 50mm or less, 10mm or more and 20mm or less, 20mm or more and 500mm or less, 20mm or more and 200mm or less, 20mm or more and 100mm or less, 20mm or more and 50mm or less, 50mm or more and 500mm or less, 50mm or more and 200mm or less, 50mm or more and 100mm or less, 100mm or more and 500mm or less, 100mm or more and 200mm or less, 200mm or more and 500mm or less.

[0143] The organic device group 102 includes a device region 103 in which a plurality of organic devices 100 are located. The device region 103 has a dimension G12 in the first direction D1 and a dimension G22 in the second direction D2.

[0144] By increasing the size of the substrate 110, the dimensions G12 and G22 of the device region 103 can be increased. As a result, the number of organic devices 100 formed on a single substrate 110 can be increased. Consequently, the manufacturing cost of the organic devices 100 can be reduced.

[0145] The dimension G11 of the substrate 110 in the first direction D1 can be, for example, 1000 mm or more, 1200 mm or more, 1300 mm or more, or 2100 mm or more. The dimension G11 can be, for example, less than 1200 mm, less than 1300 mm, less than 1900 mm, less than 2100 mm, or less than 2300 mm. The range of dimension G11 can be determined by a first group consisting of 1000 mm, 1200 mm, 1300 mm, and 2100 mm and / or a second group consisting of 1200 mm, 1300 mm, 1900 mm, 2100 mm, and 2300 mm. The range of dimension G11 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of dimension G11 can also be determined by a combination of any two of the values ​​included in the first group. The range of dimension G11 can also be determined by a combination of any two of the values ​​included in the second group. For example, size G11 can be 1000mm or more and 2300mm or less, 1000mm or more and 2100mm or less, 1000mm or more and 1900mm or less, 1000mm or more and 1300mm or less, 1000mm or more and 1200mm or less, 1200mm or more and 2300mm or less, 1200mm or more and 2100mm or less, 1200mm or more and 1900mm or less, 1200mm or more and 1300mm or less, 1300mm or more and 2300mm or less, 1300mm or more and 2100mm or less, 1300mm or more and 1900mm or less, 1900mm or more and 2300mm or less, 1900mm or more and 2100mm or less, 2100mm or more and 2300mm or less.

[0146] The dimension G21 of the substrate 110 in the second direction D2 can be, for example, 1200 mm or more, 1300 mm or more, 1500 mm or more, 2000 mm or more, or 2400 mm or more. The dimension G21 can also be less than 1300 mm, less than 2300 mm, less than 2400 mm, or less than 2600 mm. The range of dimension G21 can be determined by a first group consisting of 1200 mm, 1300 mm, 1500 mm, 2000 mm, and 2400 mm, and / or a second group consisting of 1300 mm, 2300 mm, 2400 mm, and 2600 mm. The range of dimension G21 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of dimension G21 can also be determined by a combination of any two of the values ​​included in the first group. The range of dimension G21 can also be determined by a combination of any two of the values ​​included in the second group. For example, size G21 can be 1200mm or more and 2600mm or less, 1200mm or more and 2400mm or less, 1200mm or more and 2300mm or less, 1200mm or more and 1500mm or less, 1200mm or more and 1300mm or less, 1300mm or more and 2600mm or less, 1300mm or more and 2400mm or less, 1300mm or more and 2300mm or less, 1300mm or more and 1500mm or less, 1500mm or more and 2600mm or less, 1500mm or more and 2400mm or less, 1500mm or more and 2300mm or less, 2000mm or more and 2300mm or less, 2300mm or more and 2600mm or less, 2300mm or more and 2400mm or less, 2400mm or more and 2600mm or less.

[0147] Specific numerical ranges for dimension G11 and dimension G21 can also be combined. For example, dimension G11 can be 1000 mm or more and 1200 mm or less, and dimension G21 can be 1200 mm or more and 1300 mm or less. Alternatively, dimension G11 can be 1200 mm or more and 1300 mm or less, and dimension G21 can be 2000 mm or more and 2300 mm or less. Or, dimension G11 can be 2100 mm or more and 2300 mm or less, and dimension G21 can be 2400 mm or more and 2600 mm or less.

[0148] Next, the method for forming elements such as the organic layer 130 and the second electrode 140 by vapor deposition will be explained. Figure 3This is a diagram showing the vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process in which a vapor deposition material is deposited onto a substrate 110.

[0149] like Figure 3 As shown, the vapor deposition apparatus 10 may also include a vapor deposition source 6, a heater 8, and a mask device 15 inside. The vapor deposition apparatus 10 may also include an exhaust unit for creating a vacuum atmosphere inside the vapor deposition apparatus 10. The vapor deposition source 6 is, for example, a crucible. The vapor deposition source 6 contains vapor deposition materials 7 such as organic materials and metallic materials. The heater 8 evaporates the vapor deposition material 7 under a vacuum atmosphere by heating the vapor deposition source 6.

[0150] like Figure 3 As shown, the mask assembly 15 includes at least one mask 50. The mask assembly 15 may also include a frame 40 supporting the mask 50. The frame 40 includes an opening 45. The mask 50 may also be fixed to the frame 40 in a manner that extends through the opening 45 when viewed from above. The frame 40 may also include a first frame surface 401 on which the mask 50 is fixed, and a second frame surface 402 located on the opposite side of the first frame surface 401. The frame 40 may also support the mask 50 in a stretched state in its planar direction to suppress deflection of the mask 50.

[0151] like Figure 3 As shown, the mask assembly 15 is disposed within the vapor deposition apparatus 10 with the mask 50 facing the first surface 111 of the substrate 110. The mask 50 includes a plurality of through holes 56 through which the vapor deposition material 7 from the vapor deposition source 6 passes. In the following description, the surface of the mask 50 facing the substrate 110 is referred to as the first surface 551. The surface of the mask 50 located on the opposite side of the first surface 551 is referred to as the second surface 552. A portion of the second surface 552 faces the frame 40.

[0152] like Figure 3 As shown, the vapor deposition apparatus 10 may also include a substrate holder 2 for holding the substrate 110. The substrate holder 2 may also be movable in the thickness direction of the substrate 110. The substrate holder 2 may also be movable in the surface direction of the substrate 110. The substrate holder 2 may also be configured to control the tilt of the substrate 110. For example, the substrate holder 2 may also include a plurality of chucks mounted on the outer edge of the substrate 110. Each chuck may also be movable independently in the thickness direction or the surface direction of the substrate 110.

[0153] like Figure 3 As shown, the vapor deposition apparatus 10 may also include a mask holder 3 for holding the mask assembly 15. The mask holder 3 may also be movable.

[0154] The position of the mask 50 relative to the substrate 110 can be adjusted by moving at least one of the substrate holder 2 and the mask holder 3.

[0155] The vapor deposition apparatus 10 may also include a cooling plate 4. For example... Figure 3 As shown, the cooling plate 4 can also be disposed on the second surface 112 side of the substrate 110. The cooling plate 4 can also have a flow path for circulating the refrigerant inside the cooling plate 4. The cooling plate 4 can suppress the temperature rise of the substrate 110 during the vapor deposition process.

[0156] The vapor deposition apparatus 10 may also include a magnet 5. For example... Figure 3 As shown, the magnet 5 can also be disposed on the second surface 112 of the substrate 110. The magnet 5 can also be disposed on the surface of the cooling plate 4 away from the substrate 110. The magnet 5 can attract the mask 50 towards the substrate 110 side by magnetic force. This can reduce or eliminate the gap between the mask 50 and the substrate 110. This can suppress the generation of shadows during the vapor deposition process. Shadows refer to the phenomenon where the vapor deposition material 7 enters the gap between the mask 50 and the substrate 110, thereby causing the shape of the vapor deposition layer to become uneven. The shape of the vapor deposition layer includes the thickness of the vapor deposition layer, the size of the vapor deposition layer when viewed from above, etc. An electrostatic chuck utilizing electrostatic force can also be used to attract the mask 50 towards the substrate 110 side.

[0157] Figure 4 This is a top view showing the mask assembly 15 as viewed from the first surface 551 side. The mask assembly 15 may also include a frame 40 and a mask 50 fixed to the frame 40. The frame 40 may also have a rectangular outline extending in the first direction D1 and the second direction D2. The frame 40 may also support the mask 50 in a state where tension is applied to the mask 50 in the first direction D1.

[0158] Frame 40 includes a first side 41, a second side 42, a third side 43, a fourth side 44, and an opening 45. The first side 41 and the second side 42 are opposite each other in a first direction D1, separated by the opening 45. The first side 41 and the second side 42 may also extend in a second direction D2. The third side 43 and the fourth side 44 are opposite each other in a second direction D2, separated by the opening 45. The third side 43 and the fourth side 44 may also extend in a first direction D1. The first side 41 and the second side 42 may be longer than the third side 43 and the fourth side 44. The opening 45 is located between the first side 41 and the second side 42, and between the third side 43 and the fourth side 44.

[0159] Side 41 comprises an outer surface 41a and an inner surface 41b. Side 42 comprises an outer surface 42a and an inner surface 42b. Side 43 comprises an outer surface 43a and an inner surface 43b. Side 44 comprises an outer surface 44a and an inner surface 44b. Inner surfaces 41b, 42b, 43b, and 44b face opening 45. Outer surfaces 41a and 42a are located opposite to inner surfaces 41b and 42b in the first direction D1. Outer surfaces 43a and 44a are located opposite to inner surfaces 43b and 44b in the second direction D2. Frame 40 comprises an angle 46 where the outer surfaces of the two sides intersect.

[0160] Frame 40 has a dimension E11 in the first direction D1. Dimension E11 can be, for example, 1000 mm or more, 1200 mm or more, 1300 mm or more, or 2100 mm or more. Dimension E11 can also be, for example, less than 1200 mm, less than 1300 mm, less than 1900 mm, less than 2100 mm, or less than 2300 mm. The range of dimension E11 can be determined by a first group consisting of 1000 mm, 1200 mm, 1300 mm, and 2100 mm and / or a second group consisting of 1200 mm, 1300 mm, 1900 mm, 2100 mm, and 2300 mm. The range of dimension E11 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of dimension E11 can also be determined by a combination of any two of the values ​​included in the first group. The range of size E11 can also be determined by any combination of two of the values ​​contained in the second group above. For example, size E11 can be 1000mm or more and 2300mm or less, 1000mm or more and 2100mm or less, 1000mm or more and 1900mm or less, 1000mm or more and 1300mm or less, 1000mm or more and 1200mm or less, 1200mm or more and 2300mm or less, 1200mm or more and 2100mm or less, 1200mm or more and 1900mm or less, 1200mm or more and 1300mm or less, 1300mm or more and 2300mm or less, 1300mm or more and 2100mm or less, 1300mm or more and 1900mm or less, 1900mm or more and 2300mm or less, 1900mm or more and 2100mm or less, 2100mm or more and 2300mm or less.

[0161] Frame 40 has a dimension E21 in the second direction D2. Dimension E21 can be larger than dimension E11. For example, dimension E21 can be 1200 mm or more, 1300 mm or more, 1500 mm or more, 2000 mm or more, or 2400 mm or more. Dimension E21 can also be less than 1300 mm, less than 2300 mm, less than 2400 mm, or less than 2600 mm. The range of dimension E21 can be determined by a first group consisting of 1200 mm, 1300 mm, 1500 mm, 2000 mm, and 2400 mm, and / or a second group consisting of 1300 mm, 2300 mm, 2400 mm, and 2600 mm. The range of dimension E21 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of dimension E21 can also be determined by a combination of any two of the values ​​included in the first group. The range of size E21 can also be determined by any combination of two of the values ​​contained in group 2 above. For example, size E21 can be 1200mm or more and 2600mm or less, 1200mm or more and 2400mm or less, 1200mm or more and 2300mm or less, 1200mm or more and 1500mm or less, 1200mm or more and 1300mm or less, 1300mm or more and 2600mm or less, 1300mm or more and 2400mm or less, 1300mm or more and 2300mm or less, 1300mm or more and 1500mm or less, 1500mm or more and 2600mm or less, 1500mm or more and 2400mm or less, 1500mm or more and 2300mm or less, 2000mm or more and 2300mm or less, 2300mm or more and 2600mm or less, 2300mm or more and 2400mm or less, 2400mm or more and 2600mm or less.

[0162] The ratio of dimension E21 to dimension E11 can be, for example, 1.1 or more, 1.2 or more, or 1.3 or more. The ratio of dimension E21 to dimension E11 can be, for example, 1.5 or less, 1.7 or less, or 2.0 or less. The range of the ratio of dimension E21 to dimension E11 can be determined by a first group consisting of 1.1, 1.2, and 1.3 and / or a second group consisting of 1.5, 1.7, and 2.0. The range of the ratio of dimension E21 to dimension E11 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the ratio of dimension E21 to dimension E11 can also be determined by a combination of any two of the values ​​included in the first group. The range of the ratio of dimension E21 to dimension E11 can also be determined by a combination of any two of the values ​​included in the second group. For example, the ratio of size E21 to size E11 can be 1.1 or more and 2.0 or less, 1.1 or more and 1.7 or less, 1.1 or more and 1.5 or less, 1.1 or more and 1.3 or less, 1.1 or more and 1.2 or less, 1.2 or more and 2.0 or less, 1.2 or more and 1.7 or less, 1.2 or more and 1.5 or less, 1.2 or more and 1.3 or less, 1.3 or more and 2.0 or less, 1.3 or more and 1.7 or less, 1.3 or more and 1.5 or less, 1.5 or more and 2.0 or less, 1.5 or more and 1.7 or more and 2.0 or less.

[0163] Specific numerical ranges for dimension E11 and dimension E21 can also be combined. For example, dimension E11 can be 1000mm or more and 1200mm or less, and dimension E21 can be 1200mm or more and 1300mm or less. Alternatively, dimension E11 can be 1200mm or more and 1300mm or less, and dimension E21 can be 2000mm or more and 2300mm or less. Or, dimension E11 can be 2100mm or more and 2300mm or less, and dimension E21 can be 2400mm or more and 2600mm or less.

[0164] The opening 45 has a dimension E12 in the first direction D1 and a dimension E22 in the second direction D2. By increasing the size of the frame 40, the size of the opening 45 can be increased. Increasing the size of the opening 45 increases the area of ​​the mask 50 overlapping with the opening 45 when viewed from above. This increases the number of organic devices 100 formed on a single substrate 110. Consequently, the manufacturing cost of the organic devices 100 can be reduced. "View from above" refers to observing the object along the thickness direction of the mask 50.

[0165] The mask 50 is fixed to the first side 41 and the second side 42. In top view, the mask 50 includes: a pair of end portions 51 fixed to the first side 41 and the second side 42; and a middle portion 52 located between the pair of end portions 51. The pair of end portions 51 are opposite each other in the first direction D1. The middle portion 52 overlaps with the opening 45 in top view. The middle portion 52 includes a group of through holes 53. The middle portion 52 may also include a plurality of through hole groups 53 arranged in the first direction D1.

[0166] The mask device 15 may also have N masks 50 arranged along the second direction. N is an integer greater than or equal to 2. N can be an even number. Figure 4 The mask assembly 15 shown has 10 masks 50. N can also be an odd number.

[0167] Although not shown, the mask assembly 15 may also include components that partially overlap with the mask 50 when viewed from above. The components may also be fixed to the edge of the frame 40 in a manner that extends across the opening 45. The components may also be in contact with the second surface 552 of the mask 50. One example of the component may include a pair of ends fixed to the third side 43 and the fourth side 44. Another example of the component may include a pair of ends fixed to the first side 41 and the second side 42, and located in the gap between two adjacent masks 50 in the second direction D2.

[0168] The frame 40 will be described in detail. The first side 41 and the second side 42 may also apply tension to the mask 50 in the first direction D1. For example, the first side 41 and the second side 42 may also elastically deform in the direction toward the opening 45. Preferably, the first side 41 and the second side 42 elastically deform in a manner that reproduces the tension applied to the mask 50 by the clamps described later when the mask 50 is fixed to the frame 40.

[0169] For example, the first side 41 can also be located inside line L11 in the first direction D1. Line L11 indicates the position of the outer surface 41a of the first side 41 before deformation. The label d11 indicates the amount of deformation of the first side 41 in the first direction D1. The amount of deformation d11 can also be larger as it gets closer to the second center line Lc2. Line L11 can also be set as a straight line connecting the two ends of the first side 41, at angles 46.

[0170] For example, the second side 42 can also be located on the first direction D1, inside the line L12. Line L12 indicates the position of the outer surface 42a of the second side 42 before deformation. The label d12 indicates the amount of deformation of the second side 42 in the first direction D1. The amount of deformation d12 can also be larger as it gets closer to the second center line Lc2. Line L12 can also be set as a straight line connecting the two ends of the second side 42, at angle 46.

[0171] The second centerline Lc2 is an imaginary straight line that passes through the center of the opening 45 in the second direction D2 and extends in the first direction D1.

[0172] "Inner side in the first direction" refers to the side facing the first centerline Lc1 in the first direction D1. "Outer side in the first direction" refers to the side away from the first centerline Lc1 in the first direction D1.

[0173] The first centerline Lc1 is an imaginary straight line that passes through the center of the opening 45 in the first direction D1 and extends in the second direction D2.

[0174] When the first side 41 elastically deforms inward in the first direction, a restoring force is generated on the first side 41 in the first direction outward. Similarly, a restoring force in the first direction outward is also generated on the second side 42. Therefore, the mask 50 is stretched outward in the first direction D1 by the first side 41 and the second side 42. As a result, deformation or relaxation of the mask 50 can be suppressed.

[0175] The dimensions of frame 40 are described below. The dimensions of frame 40 are set to allow for the proper generation of restoring force. The first side 41 has a width W1. Width W1 is the dimension of the first side 41 in the first direction D1. Width W1 can be, for example, 20 mm or more, 60 mm or more, or 100 mm or more. Width W1 can be, for example, less than 150 mm, less than 200 mm, or less than 250 mm. The range of width W1 can be determined by a first group consisting of 20 mm, 60 mm, and 100 mm and / or a second group consisting of 150 mm, 200 mm, and 250 mm. The range of width W1 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of width W1 can also be determined by a combination of any two of the values ​​included in the first group. The range of width W1 can also be determined by a combination of any two of the values ​​included in the second group. For example, the width W1 can be 20mm or more and 250mm or less, 20mm or more and 200mm or less, 20mm or more and 150mm or less, 20mm or more and 100mm or less, 20mm or more and 60mm or less, 60mm or more and 250mm or less, 60mm or more and 200mm or less, 60mm or more and 150mm or less, 60mm or more and 100mm or less, 100mm or more and 250mm or less, 100mm or more and 200mm or less, 100mm or more and 150mm or less, 150mm or more and 250mm or less, 150mm or more and 200mm or less, 200mm or more and 250mm or less.

[0176] The first side 41 has a cross-sectional area B1. The cross-sectional area B1 is calculated when the first side 41 is cut off by a plane orthogonal to the second direction D2. For example, the cross-sectional area B1 can be 600 mm². 2 The above can also be 1800mm. 2 The above can also be 3000mm 2 The above. For example, the cross-sectional area B1 can be 4500 mm². 2 The following can also be 6000mm 2 The following can also be 7500mm 2 The following is a range for the cross-sectional area B1, which can be determined by a length of 600 mm. 2 1800mm 2 and 3000mm 2 The first group and / or composed of 4500mm 2 6000mm 2 and 7500mm2 The range of cross-sectional area B1 can also be determined by combining any one of the values ​​included in the first group with any one of the values ​​included in the second group. The range of cross-sectional area B1 can also be determined by combining any two of the values ​​included in the first group. For example, the cross-sectional area B1 can be 600 mm². 2 Above and 7500mm 2 The following can be 600mm 2 Above and 6000mm 2 The following can be 600mm 2 Above and 4500mm 2 The following can be 600mm 2 Above and 3000mm 2 The following can be 600mm 2 Above and 1800mm 2 Below, it can be 1800mm 2 Above and 7500mm 2 Below, 1800mm is acceptable. 2 Above and 6000mm 2 Below, 1800mm is acceptable. 2 Above and 4500mm 2 Below, 1800mm is acceptable. 2 Above and 3000mm 2 Below, it can be 3000mm 2 Above and 7500mm 2 Below, it can be 3000mm 2 Above and 6000mm 2 Below, it can be 3000mm 2 Above and 4500mm 2 Below, it can be 4500mm 2 Above and 7500mm 2 Below, it can be 4500mm 2 Above and 6000mm 2 The following can also be 6000mm 2 Above and 7500mm 2 the following.

[0177] The numerical ranges of the widths of the second side 42, the third side 43, and the fourth side 44 can also be the same as the numerical range of the width W1 mentioned above. The numerical ranges of the cross-sectional areas of the second side 42, the third side 43, and the fourth side 44 can also be the same as the numerical range of the cross-sectional area B1 mentioned above.

[0178] The mask 50 is described in detail. Figure 5 This is a top view showing an example of mask 50. In the top view, mask 50 may also include: a first side edge 501 and a second side edge 502 extending in the first direction D1; and a first end 503 and a second end 504. The first end 503 and the second end 504 are the ends of mask 50 in the first direction D1.

[0179] The through-hole group 53 of the intermediate portion 52 includes a plurality of through holes 56 arranged regularly when viewed from above. The through holes 56 may also be arranged periodically in two directions. For example, the through holes 56 may also be arranged periodically in the first direction D1 and the second direction D2.

[0180] A via group 53 corresponds to an organic device 100. For example, a plurality of first organic layers 130A included in an organic device 100 are formed by vapor-deposited material through a plurality of vias 56 of a via group 53. A mask 50 includes at least one via group 53. A mask 50 may also include two or more via groups 53 arranged in a first direction D1.

[0181] The mask 50 has a dimension M11 in the first direction D1. Dimension M11 can be, for example, 600 mm or more, 800 mm or more, or 1000 mm or more. Dimension M11 can also be, for example, less than 1200 mm, less than 1500 mm, or less than 2000 mm. The range of dimension M11 can be determined by a first group consisting of 600 mm, 800 mm, and 1000 mm and / or a second group consisting of 1200 mm, 1500 mm, and 2000 mm. The range of dimension M11 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of dimension M11 can also be determined by a combination of any two of the values ​​included in the first group. The range of dimension M11 can also be determined by a combination of any two of the values ​​included in the second group. For example, size M11 can be 600mm or more and 2000mm or less, 600mm or more and 1500mm or less, 600mm or more and 1200mm or less, 600mm or more and 1000mm or less, 600mm or more and 800mm or less, 800mm or more and 2000mm or less, 800mm or more and 1500mm or less, 800mm or more and 1200mm or less, 800mm or more and 1000mm or less, 1000mm or more and 2000mm or less, 1000mm or more and 1500mm or less, 1000mm or more and 1200mm or less, 1200mm or more and 2000mm or less, 1200mm or more and 1500mm or less, 1500mm or more and 2000mm or less.

[0182] The mask 50 has a dimension M21 in the second direction D2. Dimension M21 can be, for example, 50 mm or more, 100 mm or more, or 150 mm or more. Dimension M21 can also be, for example, less than 200 mm, less than 300 mm, or less than 500 mm. The range of dimension M21 can be determined by a first group consisting of 50 mm, 100 mm, and 150 mm and / or a second group consisting of 200 mm, 300 mm, and 500 mm. The range of dimension M21 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of dimension M21 can also be determined by a combination of any two of the values ​​included in the first group. The range of dimension M21 can also be determined by a combination of any two of the values ​​included in the second group. For example, size M21 can be 50mm or more and 500mm or less, 50mm or more and 300mm or less, 50mm or more and 200mm or less, 50mm or more and 150mm or less, 50mm or more and 100mm or less, 100mm or more and 500mm or less, 100mm or more and 300mm or less, 100mm or more and 200mm or less, 100mm or more and 150mm or less, 150mm or more and 500mm or less, 150mm or more and 300mm or less, 150mm or more and 200mm or less, 200mm or more and 500mm or less, 200mm or more and 300mm or less, 300mm or more and 500mm or less.

[0183] Next, the cross-sectional structure of mask 50 will be explained. Figure 6 This is a cross-sectional view showing an example of mask 50.

[0184] The mask 50 has a substrate 55 and a through hole 56 extending through the substrate 55. The substrate 55 includes a first surface 551 and a second surface 552. The through hole 56 extends through the substrate 55 from the first surface 551 to the second surface 552.

[0185] The through hole 56 may also include a first recess 561, a second recess 562, and a connecting portion 563 connecting the first recess 561 and the second recess 562. The first recess 561 is a recess located on the first surface 551 and recessed towards the second surface 552. The second recess 562 is a recess located on the second surface 552 and recessed towards the first surface 551. The through hole 56 is formed by connecting the first recess 561 and the second recess 562. The first recess 561 is formed by processing the substrate 55 from the first surface 551 side by etching or laser processing, etc. The second recess 562 is formed by processing the substrate 55 from the second surface 552 side by etching or laser processing, etc.

[0186] The first recess 561 has a dimension r1 when viewed from above. The second recess 562 has a dimension r2 when viewed from above. Dimension r2 may also be larger than dimension r1. For example, when viewed from above, the outline of the second recess 562 may also enclose the outline of the first recess 561.

[0187] The connecting portion 563 may also have a continuous profile covering the entire circumference. The connecting portion 563 may also be located between the first surface 551 and the second surface 552. The connecting portion 563 may also define a through portion 564 with the smallest opening area of ​​the through hole 56 when viewed from above the mask 50.

[0188] The dimension r of the through portion 564 can be, for example, 10 μm or more, 15 μm or more, 20 μm or more, or 25 μm or more. Alternatively, the dimension r of the through portion 564 can be, for example, 40 μm or less, 45 μm or less, 50 μm or less, or 55 μm or less. The range of the dimension r of the through portion 564 can be determined by a first group consisting of 10 μm, 15 μm, 20 μm, and 25 μm and / or a second group consisting of 40 μm, 45 μm, 50 μm, and 55 μm. The range of the dimension r of the through portion 564 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the dimension r of the through portion 564 can also be determined by a combination of any two of the values ​​included in the first group. The range of the dimension r of the through portion 564 can also be determined by a combination of any two of the values ​​included in the second group. For example, the dimension r of the through portion 564 can be 10μm or more and 55μm or less, 10μm or more and 50μm or less, 10μm or more and 45μm or less, 10μm or more and 40μm or less, 10μm or more and 25μm or less, 10μm or more and 20μm or less, 10μm or more and 15μm or less, 15μm or more and 55μm or less, 15μm or more and 50μm or less, 15μm or more and 45μm or less, 15μm or more and 40μm or less, 15μm or more and 25μm or less, 15μm or more and 20μm or more, 20μm or more and... Below 55μm, can be above 20μm and below 50μm, can be above 20μm and below 45μm, can be above 20μm and below 40μm, can be above 20μm and below 25μm, can be above 25μm and below 55μm, can be above 25μm and below 50μm, can be above 25μm and below 45μm, can be above 25μm and below 40μm, can be above 40μm and below 55μm, can be above 40μm and below 50μm, can be above 40μm and below 45μm, can be above 45μm and below 55μm, can be above 45μm and below 50μm, can be above 50μm and below 55μm.

[0189] The dimension r of the through portion 564 is defined by the light passing through the through hole 56. Specifically, parallel light is incident along the normal direction of the mask 50 onto one of the first surface 551 and the second surface 552 of the mask 50, and exits from the other side of the first surface 551 and the second surface 552 through the through hole 56. The dimension r of the through portion 564 is taken as the size of the area occupied by the emitted light in the surface direction of the mask 50.

[0190] exist Figure 6 The illustration shows an example where the second surface 552 of the substrate 55 remains between two adjacent second recesses 562, but it is not limited to this. Although not illustrated, etching can also be performed in such a way that two adjacent second recesses 562 are connected. That is, there can also be a portion between two adjacent second recesses 562 where the second surface 552 of the substrate 55 is not remaining.

[0191] The materials of the mask 50 and the frame 40 will be described. As the main materials for the mask 50 and the frame 40, a nickel-containing iron alloy can be used. In addition to nickel, the iron alloy may also contain cobalt. For example, as the material of the substrate 55 of the mask 50, an iron alloy can be used with a total nickel and cobalt content of 28% by mass or more and 54% by mass or less, and a cobalt content of 0% by mass or more and 6% by mass or less. This reduces the difference between the coefficients of thermal expansion of the mask 50 and the frame 40 and the coefficient of thermal expansion of the substrate 110 containing glass. Therefore, it is possible to suppress the decrease in dimensional and positional accuracy of the layer formed on the substrate 110 by vapor deposition due to the thermal expansion of the mask 50, the frame 40, the substrate 110, etc.

[0192] The combined content of nickel and cobalt in the substrate 55 can be 28% by mass or more and 38% by mass or less. In this case, specific examples of ferroalloys containing nickel or nickel and cobalt can be listed as: Invar alloy materials, super Invar alloy materials, and super Invar alloy materials. Invar alloy materials are ferroalloys containing 34% by mass or more and 38% by mass of nickel, with the balance being iron and unavoidable impurities. Super Invar alloy materials are ferroalloys containing 30% by mass or more and 34% by mass of nickel, cobalt, the balance being iron, and unavoidable impurities. Super Invar alloy materials are ferroalloys containing 28% by mass or more and 34% by mass of nickel, 2% by mass or more and 7% by mass of cobalt, 0.1% by mass or more and 1.0% by mass of manganese, 0.10% by mass of silicon, 0.01% by mass of carbon, the balance being iron, and unavoidable impurities.

[0193] The combined content of nickel and cobalt in the mask 50 can be 38% by mass or more and 54% by mass or less. For example, the mask 50 can also be made of an iron alloy containing 38% by mass or more and 54% by mass of nickel, with the balance being iron and unavoidable impurities. Such a mask 50 can also be manufactured by a plating method.

[0194] During the vapor deposition process, if the temperatures of the mask 50, frame 40, and substrate 110 do not reach high temperatures, it is not necessary for the coefficients of thermal expansion of the mask 50 and frame 40 to be equal to those of the substrate 110. In this case, materials other than the aforementioned iron alloys can be used as the materials constituting the mask 50. For example, chromium-containing iron alloys or other iron alloys besides the nickel-containing iron alloys mentioned above can be used. As a chromium-containing iron alloy, for example, an iron alloy known as stainless steel can be used. Alternatively, alloys other than iron alloys, such as nickel or nickel-cobalt alloys, can also be used.

[0195] The thickness T0 of the mask 50 can be, for example, 8 μm or more, 10 μm or more, 13 μm or more, or 15 μm or more. Alternatively, the thickness T0 can be, for example, less than 20 μm, less than 30 μm, less than 40 μm, or less than 50 μm. The range of thickness T0 can be determined by a first group consisting of 8 μm, 10 μm, 13 μm, and 15 μm and / or a second group consisting of 20 μm, 30 μm, 40 μm, and 50 μm. The range of thickness T0 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of thickness T0 can also be determined by a combination of any two of the values ​​included in the first group. The range of thickness T0 can also be determined by a combination of any two of the values ​​included in the second group. For example, the thickness T0 can be 8μm or more and 50μm or less, 8μm or more and 40μm or less, 8μm or more and 30μm or less, 8μm or more and 20μm or less, 8μm or more and 15μm or less, 8μm or more and 13μm or less, 8μm or more and 10μm or less, 10μm or more and 50μm or less, 10μm or more and 40μm or less, 10μm or more and 30μm or less, 10μm or more and 20μm or less, 10μm or more and 15μm or less, 10μm or more and 13μm or less, and 13μm or more and 50μm or less. It can be 13μm or larger and 40μm or smaller, it can be 13μm or larger and 30μm or smaller, it can be 13μm or larger and 20μm or smaller, it can be 13μm or larger and 15μm or smaller, it can be 15μm or larger and 50μm or smaller, it can be 15μm or larger and 40μm or smaller, it can be 15μm or larger and 30μm or smaller, it can be 15μm or larger and 20μm or smaller, it can be 20μm or larger and 50μm or smaller, it can be 20μm or larger and 40μm or smaller, it can be 20μm or larger and 30μm or smaller, it can be 30μm or larger and 50μm or smaller, it can be 30μm or larger and 40μm or smaller, it can be 40μm or larger and 50μm or smaller.

[0196] By setting the thickness T0 to 50 μm or less, it is possible to prevent the vapor-deposited material 7 from adhering to the wall surface of the through-hole 56 before passing through it. This improves the utilization efficiency of the vapor-deposited material 7. Furthermore, by setting the thickness T0 to 8 μm or more, the strength of the mask 50 is ensured, and damage or deformation of the mask 50 is prevented.

[0197] The thickness T0 is measured using a contact measurement method. The contact measurement method uses the "MT 1271" length gauge manufactured by Hidenhin Corporation, which features a ball mill-guided plunger.

[0198] Next, the structure of the mask 50 around the frame 40 will be described in detail. Figure 7 This is a magnified view of the first side 41 and the mask 50 fixed to the first side 41.

[0199] The mask 50 is fixed to the first side 41 and the second side 42 by a fixing part 57. The fixing part 57 is, for example, as shown in the image below. Figure 7 The mask 50 includes a welded portion 58 as shown. The welded portion 58 is formed by melting a portion of the mask 50. The welded portion 58 is formed, for example, by irradiating the end 51 of the mask 50 that overlaps with the first frame surface 401 of the frame 40 with a laser. The fixing portion 57 may also include multiple welded portions 58. The welded portions 58 may also be arranged along the second direction D2.

[0200] The fixing part 57 may also include a first column 571 and a second column 572. The first column 571 includes a plurality of welded parts 58 arranged in the second direction D2. The second column 572 is located between the first column 571 and the opening 45, and includes a plurality of welded parts 58 arranged in the second direction D2.

[0201] In conventional mask assemblies, a method is employed where a weld portion extending linearly in the second direction D2 is used to fix the mask 50 to the frame 40. According to this embodiment, compared to the case where a weld portion extending linearly is used, the range of temperature rise locally generated on the mask 50 due to welding can be reduced. Therefore, undulations around the weld portion 58 on the first surface 551 can be suppressed.

[0202] Figure 8This is a top view showing an example of multiple weld portions 58. Each weld portion 58 includes an outer edge 585. The outer edge 585 can be circular or a shape other than circular. The outer edge 585 is determined based on an image of the weld portion 58. In the image, the outer edge 585 is black, and the area on the first surface 551 of the mask 50 outside the outer edge 585 is a color other than black. For example, the area on the first surface 551 of the mask 50 outside the outer edge 585 appears as a brown, blue, or other color due to the oxide film. Therefore, the outer edge 585 is determined based on the color boundary. The image is obtained using a laser microscope. "Outer side" refers to the side away from the center point of the weld portion 58 when viewed from above. "Inner side," as described later, refers to the side closer to the center point of the weld portion 58 when viewed from above.

[0203] The welded portion 58 has a dimension S2 in the second direction D2. Dimension S2 is the distance between the first end 581 and the second end 582 in the second direction D2. The first end 581 and the second end 582 are the intersection of a second straight line L2 extending in the second direction D2 and the outer edge 585. The second straight line L2 is imaginarily depicted as passing through the position where the welded portion 58's dimension in the second direction D2 becomes the largest.

[0204] As described later, by forming the weld portion 58 in a manner that increases the unit peel strength, the size S2 of the weld portion 58 can be reduced. By reducing the size S2 of the weld portion 58, the range of influence of the weld portion 58 on the shape of the first surface 551 can be narrowed. As a result, the influence of the weld portion 58 on the through hole 56 can be suppressed.

[0205] The dimension S2 of the welded portion 58 can be, for example, 50 μm or more, 70 μm or more, or 100 μm or more. The dimension S2 can be, for example, less than 120 μm, less than 150 μm, less than 200 μm, less than 220 μm, or less than 250 μm. The range of dimension S2 can be determined by a first group consisting of 50 μm, 70 μm, and 100 μm and / or a second group consisting of 120 μm, 150 μm, 200 μm, 220 μm, and 250 μm. The range of dimension S2 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of dimension S2 can also be determined by a combination of any two of the values ​​included in the first group. The range of dimension S2 can also be determined by a combination of any two of the values ​​included in the second group. Size S2 can be, for example, 50μm or larger and 250μm or smaller, 50μm or larger and 220μm or smaller, 50μm or larger and 200μm or smaller, 50μm or larger and 150μm or smaller, 50μm or larger and 120μm or smaller, 50μm or larger and 100μm or smaller, 50μm or larger and 70μm or smaller, 70μm or larger and 250μm or smaller, 70μm or larger and 220μm or smaller, 70μm or larger and 200μm or smaller, 70μm or larger and 150μm or smaller, 70μm or larger and 120μm or smaller, 70μm or larger and 100μm or smaller, 100μm or larger and 250μm or smaller, or 1. Above 00μm and below 220μm, can be above 100μm and below 200μm, can be above 100μm and below 150μm, can be above 100μm and below 120μm, can be above 120μm and below 250μm, can be above 120μm and below 220μm, can be above 120μm and below 200μm, can be above 120μm and below 150μm, can be above 150μm and below 250μm, can be above 150μm and below 220μm, can be above 150μm and below 200μm, can be above 200μm and below 250μm, can be above 200μm and below 220μm, can be above 220μm and below 250μm.

[0206] The dimension S2 of the welded part 58 is calculated by averaging the dimensions S2 of the 10 welded parts 58 located in the center of the second direction D2 among the plurality of welded parts 58 included in the first column 571.

[0207] like Figure 8As shown, the first column 571 may also include a plurality of welded portions 58 arranged at a first spacing P1 in the second direction D2. The first spacing P1 is calculated by averaging the distance between the first ends 581 of two adjacent welded portions 58 in the second direction D2.

[0208] The first spacing P1 can also be larger than the dimension S2 of the welded portion 58 in the second direction D2. That is, the multiple welded portions 58 can also be separated from each other. The first spacing P1 can be, for example, 150 μm or more, 300 μm or more, or 500 μm or more. The first spacing P1 can be, for example, 1000 μm or less, 2000 μm or less, or 3000 μm or less. The range of the first spacing P1 can be determined by a first group consisting of 150 μm, 300 μm, and 500 μm and / or a second group consisting of 1000 μm, 2000 μm, and 3000 μm. The range of the first spacing P1 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the first spacing P1 can also be determined by a combination of any two of the values ​​included in the first group. The range of the first spacing P1 can also be determined by a combination of any two of the values ​​included in the second group. The first spacing P1 can be, for example, greater than 150μm and less than 3000μm, greater than 150μm and less than 2000μm, greater than 150μm and less than 1000μm, greater than 150μm and less than 500μm, greater than 150μm and less than 300μm, greater than 300μm and less than 3000μm, greater than 300μm and less than 2000μm, greater than 300μm and less than 1000μm, greater than 300μm and less than 500μm, greater than 500μm and less than 3000μm, greater than 500μm and less than 2000μm, greater than 500μm and less than 1000μm, greater than 1000μm and less than 3000μm, greater than 1000μm and less than 2000μm, greater than 2000μm and less than 3000μm.

[0209] like Figure 8 As shown, the second column 572 may also include a plurality of welded portions 58 arranged at a second spacing P2 in the second direction D2. The second spacing P2 is also calculated in the same way as the first spacing P1 by averaging the distance between the first ends 581 of two adjacent welded portions 58 in the second direction D2. The numerical range of the second spacing P2 may also be the same as the numerical range of the first spacing P1 described above.

[0210] exist Figure 8In this diagram, d10 represents the interval between column 1 (571) and column 2 (572) in the first direction D1. The interval d10 can be, for example, greater than 50 μm, greater than 100 μm, or greater than 200 μm. The interval d10 can also be less than 500 μm, less than 1000 μm, or less than 3000 μm. The range of the interval d10 can be determined by a first group consisting of 50 μm, 100 μm, and 200 μm and / or a second group consisting of 500 μm, 1000 μm, and 3000 μm. The range of the interval d10 can also be determined by a combination of any one of the values ​​contained in the first group and any one of the values ​​contained in the second group. The range of the interval d10 can also be determined by a combination of any two values ​​contained in the first group and any two values ​​contained in the second group. The interval d10 can be, for example, greater than 50μm and less than 3000μm, greater than 50μm and less than 1000μm, greater than 50μm and less than 500μm, greater than 50μm and less than 200μm, greater than 50μm and less than 100μm, greater than 100μm and less than 3000μm, greater than 100μm and less than 1000μm, greater than 100μm and less than 500μm, greater than 100μm and less than 200μm, greater than 200μm and less than 3000μm, greater than 200μm and less than 1000μm, greater than 200μm and less than 500μm, greater than 500μm and less than 3000μm, greater than 500μm and less than 1000μm, greater than 1000μm and less than 3000μm.

[0211] The shape of the welded part 58 when viewed from above is described in detail. Figure 9A This is a top view showing the welded portion 58 after magnification. The welded portion 58 preferably has a low roundness. As a result, it is possible to suppress undulations around the welded portion 58 on the first surface 551.

[0212] Roundness is calculated using (Da - Db) / 2. Da is the diameter of the first geometric circle 591. The first geometric circle 591 is an imaginary circle externally tangent to the outer edge 585 of the welded portion 58 and having the same center point as the center point 583 of the outer edge 585. Db is the diameter of the second geometric circle 592. The second geometric circle 592 is an imaginary circle internally tangent to the outer edge 585 of the welded portion 58 and having the same center point as the center point 583 of the outer edge 585. The center point 583 is a point located at an equidistant distance from both the first end 581 and the second end 582.

[0213] The roundness of the welded portion 58 can be, for example, 0.1 μm or more, 1 μm or more, or 3 μm or more. The roundness of the welded portion 58 can be, for example, 10 μm or less, 15 μm or less, or 25 μm or less. The range of roundness of the welded portion 58 can be determined by a first group consisting of 1 μm, 3 μm, and 5 μm and / or a second group consisting of 10 μm, 15 μm, and 25 μm. The range of roundness of the welded portion 58 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of roundness of the welded portion 58 can also be determined by a combination of any two of the values ​​included in the first group. The range of roundness of the welded portion 58 can also be determined by a combination of any two of the values ​​included in the second group. The roundness of the welded part 58 can be, for example, 0.1μm or more and 25μm or less, 0.1μm or more and 15μm or less, 0.1μm or more and 10μm or less, 0.1μm or more and 3μm or less, 0.1μm or more and 1μm or less, 1μm or more and 25μm or less, 1μm or more and 15μm or less, 1μm or more and 10μm or less, 1μm or more and 3μm or less, 3μm or more and 25μm or less, 3μm or more and 15μm or less, 3μm or more and 10μm or less, 10μm or more and 25μm or less, 10μm or more and 15μm or more, 15μm or more and 25μm or less.

[0214] The roundness of the welded part 58 is calculated by averaging the roundness of the 10 welded parts 58 located in the center of the second direction D2 among the multiple welded parts 58 contained in the first column 571.

[0215] Next, the height of the welded part 58 will be explained. Figure 9B This is a top view showing the measurement position of the height of the welded part 58.

[0216] The welded portion 58 has a first height H1, a second height H2, a third height H3, and a fourth height H4. The first height H1 is the average height of the surface of the welded portion 58 measured along the contour of a first imaginary circle 596. The first imaginary circle 596 is an imaginary circle having a diameter equal to 0.25 times the dimension S2 of the welded portion 58 in the second direction D2, and having the same center point as the center point 583 of the welded portion 58. The second height H2 is the average height of the surface of the welded portion 58 measured along the contour of a second imaginary circle 597. The second imaginary circle 597 is an imaginary circle having a diameter equal to 0.50 times the dimension S2, and having the same center point as the center point 583 of the welded portion 58. The third height H3 is the average height of the surface of the welded portion 58 measured along the contour of a third imaginary circle 598. The third imaginary circle 598 is an imaginary circle having a diameter equal to 0.90 times that of dimension S2 and having the same center point as the center point 583 of the welded portion 58. The fourth height H4 is the average value of the heights of the surface of the welded portion 58 measured along the contour of the fourth imaginary circle 599. The fourth imaginary circle 599 is an imaginary circle having a diameter equal to that of dimension S2 and having the same center point as the center point 583 of the welded portion 58.

[0217] The first height H1, the second height H2, the third height H3, and the fourth height H4 are determined based on the position of the outer edge 585 in the normal direction of the first surface 551. A positive value for the first height H1 means that the surface of the welded portion 58 located on the outline of the first imaginary circle 596 is raised relative to the outer edge 585. A negative value for the first height H1 means that the surface of the welded portion 58 located on the outline of the first imaginary circle 596 is recessed relative to the outer edge 585. The positive and negative values ​​of the second height H2, the third height H3, and the fourth height H4 have the same meaning.

[0218] The welded section 58 has a first height difference H12, a second height difference H24, and a third height difference H34. The first height difference H12 is obtained by subtracting the second height H2 from the first height H1. That is, H12 = H1 - H2. The second height difference H24 is obtained by subtracting the fourth height H4 from the second height H2. That is, H24 = H2 - H4. The third height difference H34 is obtained by subtracting the fourth height H4 from the third height H3. That is, H34 = H3 - H4.

[0219] The welded part 58 has a first ratio α and a second ratio β. The first ratio α and the second ratio β are expressed by the following formula.

[0220] α=H12 / H34

[0221] β=H12 / H24

[0222] The first ratio α is preferably 0.0 or higher. A first ratio α of 0.0 or higher means that both the first height difference H12 and the third height difference H34 are positive or both are negative. A positive first height difference H12 means that the welded portion 58 bulges from the second imaginary circle 597 toward the first imaginary circle 596. A negative first height difference H12 means that the welded portion 58 is recessed from the second imaginary circle 597 toward the first imaginary circle 596. A positive third height difference H34 means that the welded portion 58 bulges from the fourth imaginary circle 599 toward the third imaginary circle 598. A negative third height difference H34 means that the welded portion 58 is recessed from the fourth imaginary circle 599 toward the third imaginary circle 598. Both the first height difference H12 and the third height difference H34 being positive values ​​mean that the tendency of the weld portion 58 between the second imaginary circle 597 and the first imaginary circle 596 is consistent with the tendency of the weld portion 58 between the fourth imaginary circle 599 and the third imaginary circle 598. Similarly, both the first height difference H12 and the third height difference H34 being negative values ​​mean that the tendency of the weld portion 58 between the second imaginary circle 597 and the first imaginary circle 596 is consistent with the tendency of the weld portion 58 between the fourth imaginary circle 599 and the third imaginary circle 598.

[0223] The second ratio β is preferably 0.0 or higher. A second ratio β of 0.0 or higher means that both the first height difference H12 and the second height difference H24 are positive or both are negative. A positive second height difference H24 means that the weld portion 58 bulges from the fourth imaginary circle 599 toward the second imaginary circle 597. A negative second height difference H24 means that the weld portion 58 is recessed from the fourth imaginary circle 599 toward the second imaginary circle 597. Both the first height difference H12 and the second height difference H24 being positive means that the tendency of the weld portion 58 between the second imaginary circle 597 and the first imaginary circle 596 is consistent with the tendency of the weld portion 58 between the fourth imaginary circle 599 and the second imaginary circle 597. Similarly, the fact that both the first height difference H12 and the second height difference H24 are negative means that the tendency of the weld 58 between the second imaginary circle 597 and the first imaginary circle 596 is consistent with the tendency of the weld 58 between the fourth imaginary circle 599 and the second imaginary circle 597.

[0224] The ratio β / α, which is the ratio of the second ratio β to the first ratio α, can be, for example, 0.025 or more, 0.035 or more, or 0.050 or more. β / α can be, for example, less than 0.100, less than 0.120, or less than 0.150. The range of β / α can be determined by a first group consisting of 0.025, 0.035, and 0.050 and / or a second group consisting of 0.100, 0.120, and 0.150. The range of β / α can also be determined by a combination of any one of the values ​​contained in the first group and any one of the values ​​contained in the second group. The range of β / α can also be determined by a combination of any two of the values ​​contained in the first group. The range of β / α can also be determined by a combination of any two of the values ​​contained in the second group. β / α can be, for example, greater than or equal to 0.025 and less than 0.150, greater than or equal to 0.025 and less than 0.120, greater than or equal to 0.025 and less than 0.100, greater than or equal to 0.025 and less than 0.050, greater than or equal to 0.025 and less than 0.035, greater than or equal to 0.035 and less than 0.150, greater than or equal to 0.035 and less than 0.120, greater than or equal to 0.035 and less than 0.050, greater than or equal to 0.050 and less than 0.150, greater than or equal to 0.100 and less than 0.120, greater than or equal to 0.120 and less than 0.150.

[0225] Figure 9C This is a diagram illustrating an example of the relationship between β / α and the shape of the cross-section of the welded portion 58 when both the first ratio α and the second ratio β are 0.0 or higher. Figure 9C The horizontal axis represents the position of the welded part 58 in the radial direction. The label R indicates the radius of the welded part 58 when viewed from above. 0.0R represents the center point of the welded part 58. 0.25R represents the position 0.25×R away from the center point of the welded part 58 when viewed from above. 0.5R represents the position 0.5×R away from the center point of the welded part 58 when viewed from above. 0.9R represents the position 0.9×R away from the center point of the welded part 58 when viewed from above. 1.0R represents the position 1.0×R away from the center point of the welded part 58 when viewed from above.

[0226] Curves Pr1, Pr2, and Pr3 represent the cross-sectional profiles of the welded part 58. β / α in curve Pr2 is less than β / α in curve Pr1. β / α in curve Pr3 is greater than β / α in curve Pr1.

[0227] The smaller β / α is, the greater the variation in the profile of the weld section 58 between the 0.9×R and 0.5×R positions. This large variation in the profile of the weld section 58 between the 0.9×R and 0.5×R positions indicates a high intensity of laser light irradiating the mask 50 during the welding process. If the laser intensity is too high, defects such as porosity will occur inside the weld section 58. Porosity originates from air bubbles, blowholes, and pores. If defects such as porosity occur, the unit peel strength decreases.

[0228] As shown in the embodiments described later, when β / α is 0.150 or less, a weld portion 58 with appropriate unit peel strength is formed. β / α can function as a useful indicator for judging whether the weld portion 58 is appropriate. β / α can also function as a useful indicator for judging whether the conditions of the welding process are appropriate.

[0229] The larger the β / α ratio, the flatter the profile of the weld section 58. A flat profile of the weld section 58 means that the intensity of the laser irradiating the mask 50 during the welding process is insufficient. If the laser intensity is insufficient, the welding penetration depth of the weld section 58 becomes smaller, thereby reducing the unit peel strength.

[0230] As shown in the embodiments described later, when β / α is 0.025 or higher, a weld portion 58 with appropriate unit peel strength is formed. β / α can function as a useful indicator for judging whether the weld portion 58 is appropriate. β / α can also function as a useful indicator for judging whether the conditions of the welding process are appropriate.

[0231] The first height H1, the second height H2, the third height H3, and the fourth height H4 were measured using a laser microscope. The first height H1 of a welded portion 58 was calculated by measuring the position of the surface of the welded portion 58 at 0.283 μm intervals along the first imaginary circle 596. The second height H2 of a welded portion 58 was calculated by measuring the position of the surface of the welded portion 58 at 0.283 μm intervals along the second imaginary circle 597. The third height H3 of a welded portion 58 was calculated by measuring the position of the surface of the welded portion 58 at 0.283 μm intervals along the third imaginary circle 598. The fourth height H4 of a welded portion 58 was calculated by measuring the position of the surface of the welded portion 58 at 0.283 μm intervals along the fourth imaginary circle 599.

[0232] The first height H1, the second height H2, the third height H3, and the fourth height H4 are calculated by averaging the values ​​of the first height H1, the second height H2, the third height H3, and the fourth height H4 of the ten welded parts 58 located in the center of the second direction D2 among the multiple welded parts 58 contained in the first column 571.

[0233] Next, the cross-sectional shape of the welded part 58 will be described.

[0234] Figure 10A It shows along Figure 8 The figure shows an example of a cross-section of the weld portion 58 of the second straight line L2. The weld portion 58 may also include a protrusion 586 overlapping the center point 583. The protrusion 586 is a portion of the weld portion 58 that protrudes relative to the outer edge 585 in the normal direction of the first surface 551. The protrusion 586 is easily generated when the first surface 551 is irradiated with a laser while the second surface 552 of the mask 50 is in contact with the first surface 401 of the frame 40.

[0235] like Figure 10A As shown, the weld portion 58 may also include a recess 587 located between the protrusion 586 and the outer edge 585. The recess 587 is a portion of the weld portion 58 that is recessed relative to the outer edge 585 in the normal direction of the first surface 551. The depth of the recess 587 may also be less than the height of the protrusion 586.

[0236] exist Figure 10A In the example shown, the first height difference H12 is positive, the second height difference H24 is positive, and the third height difference H34 is negative. Therefore, the first ratio α is negative, and the second ratio β is positive.

[0237] Figure 10B It shows along Figure 8 A diagram showing an example of the cross-section of the welded portion 58 of the second straight line L2. (See diagram for reference.) Figure 10B As shown, the protrusion 586 of the welded portion 58 may also include a recess overlapping the center point 583. Figure 10B In the example shown, the first height difference H12 is positive, the second height difference H24 is positive, and the third height difference H34 is negative. Therefore, the first ratio α is negative, and the second ratio β is positive.

[0238] Figure 10C It shows along Figure 8A diagram showing an example of the cross-section of the weld portion 58 of the second straight line L2. The weld portion 58 may also include a recess 588 overlapping with the center point 583. The recess 588 is a portion of the weld portion 58 that is recessed relative to the outer edge 585 in the normal direction of the first surface 551. The recess 588 is easily produced when the first surface 551 is irradiated with a laser while there is a gap between the second surface 552 of the mask 50 and the first surface 401 of the frame 40. Figure 10C In the example shown, the first height difference H12 is negative, the second height difference H24 is negative, and the third height difference H34 is negative. Therefore, the first ratio α is positive, and the second ratio β is positive.

[0239] Figure 10D It shows along Figure 8 A diagram showing an example of the cross-section of the welded portion 58 of the second straight line L2. The welded portion 58 may also include a protrusion 586 overlapping with the center point 583. The welded portion 58 may also not include a recess 587 overlapping with the third imaginary circle 598. Figure 10D In the example shown, the first height difference H12 is positive, the second height difference H24 is positive, and the third height difference H34 is positive. Therefore, the first ratio α is positive, and the second ratio β is positive.

[0240] Next, the manufacturing apparatus for manufacturing the mask device 15 described above will be explained. Figure 11 This is a top view showing an example of a manufacturing apparatus 80. The manufacturing apparatus 80 may include a pressing mechanism 82 and a control device. The manufacturing apparatus 80 may also include an observation device 93, a fixing device 94, a stretching device, etc.

[0241] The pressing mechanism 82 presses the first side 41 and the second side 42 of the frame 40 in the direction toward the opening 45. For example, the pressing mechanism 82 presses the first side 41 and the second side 42 inward in the first direction D1. The pressing mechanism 82 that presses the first side 41 may also include multiple pressing devices 83. The pressing mechanism 82 that presses the second side 42 may also include multiple pressing devices 83.

[0242] The control device controls the pressing force applied by the pressing mechanism 82 to the first side 41 and the second side 42. When the first side 41 and the second side 42 are elastically deformed inward, an outward restoring force is generated on the first side 41 and the second side 42. The mask 50 is mounted on the first side 41 and the second side 42 in the inward elastically deformed state. After the pressing force is removed, the mask 50 is stretched outward by the first side 41 and the second side 42 in the first direction D1.

[0243] The control device can also control the pressing mechanism 82 to apply a predetermined pressing force to the first side 41 and the second side 42. Alternatively, the control device can control the pressing mechanism 82 so that the deformation of the first side 41 and the second side 42 is the target deformation.

[0244] The functions of a control device can also be implemented through software running on a computer, such as a personal computer. For example, a program can be installed on a computer, thereby enabling the computer to function as a control device.

[0245] The program can be pre-installed on the computer at the time of manufacture, or it can be installed on the computer after manufacture using a computer-readable, non-transitory storage medium containing the program. The type of storage medium is not particularly limited; various storage media can be considered, such as portable storage media like disks or optical discs, and fixed storage media like hard disk drives or memory devices. Furthermore, the program can also be distributed via communication lines such as the Internet. In the case of program distribution via communication lines, the storage medium containing the program, as described in this embodiment, is at least temporarily stored on the server used for distribution.

[0246] The observation device 93 observes the mask 50. The observation device 93 may include, for example, a camera. The observation device 93 detects the through-hole 56, contour, etc., of the mask 50. The observation device 93 can also detect markings formed on the mask 50. The observation device 93 may also be configured to face the first surface 551 of the mask 50.

[0247] The observation device 93 may also be supported by a moving mechanism 91. The moving mechanism 91 moves the observation device 93 along a first direction D1, a second direction D2, etc. For example, the moving mechanism 91 may also include a first moving device 92 that moves the observation device 93 along the first direction D1. The moving mechanism 91 may also include a second moving device that moves the first moving device 92 along the second direction D2. The observation device 93 observes the mask 50 at multiple positions, thereby obtaining information related to the deformation of the frame 40.

[0248] The tensioning device applies tension to the mask 50 in the first direction D1 when it is not fixed to the frame 40. As described later, the tensioning device includes, for example, a clamp. The tensioning device is also capable of transporting the mask 50 in the in-plane direction of the first frame surface 401 of the frame 40.

[0249] The fixing device 94 secures the mask 50 to the first side 41 and the second side 42. The fixing device 94, for example, irradiates the mask 50 with a laser. The mask 50 is secured to the frame 40 by forming the aforementioned weld portion 58 between the mask 50 and the frame 40. Alternatively, the fixing device 94 can secure the mask 50 to the frame 40 while the tensioning device applies tension to the mask 50.

[0250] The fixed device 94 may also be supported by the moving mechanism 91. The moving mechanism 91 that moves the fixed device 94 may be the same as or different from the moving mechanism 91 that moves the observation device 93.

[0251] The control device can also control the stretching device and the fixing device 94 based on information from the observation device 93. For example, the control device controls the stretching device to align the positions of the through holes 56, contours, markings, etc., of the mask 50 towards the target position. For example, the control device controls the position of the stretching device and the tension applied to the mask 50 by the stretching device. Alternatively, if the difference between the actual position and the target position of the mask 50 is below a threshold, the control device can fix the mask 50 to the frame 40 by controlling the fixing device 94.

[0252] The control device for controlling the tensioning device and the fixing device 94 can be the same as or different from the control device for controlling the pressing mechanism 82.

[0253] The laser irradiating the mask 50 from the fixed device 94 will be described in detail. The laser may be single-mode. In the following description, a single-mode laser will also be referred to as a single-mode laser. As will be described later, a multi-mode laser will also be referred to as a multi-mode laser.

[0254] Single-mode and multi-mode lasers are distinguished based on their transverse modes. A transverse mode represents the intensity distribution of the laser beam in a direction perpendicular to the resonant direction of the laser device's resonator. Transverse modes are determined by the TEM (Transverse Electron Microscope). nm To indicate, in which, the TEM nm The term is composed of the first letters of Transverse Electro-Magnetic, the electric field mode m, and the magnetic field mode n. m and n are integers greater than or equal to 0. Single-mode lasers consist only of TEM. 00 Mode composition. Multimode lasers consist of multiple TEMs. nm model.

[0255] Figure 12 This is a graph illustrating an example of the intensity distribution of a single-mode laser. Figure 12 In the diagram, the vertical axis I represents the laser intensity, and the horizontal axis x represents the position in a direction perpendicular to the resonance direction of the resonator of the laser device. The direction of the horizontal axis x can also correspond to the in-plane direction of the first surface 551 of the mask 50. For example... Figure 12 As shown, single-mode lasers can have a Gaussian intensity distribution.

[0256] The intensity distribution of the laser beam irradiated by the fixed device 94 onto the mask 50 can also deviate from a Gaussian intensity distribution. This deviation from the Gaussian intensity distribution can also be determined by the beam quality factor M. 2 Indicated. Beam quality factor M 2 It can be calculated using the following formula (1).

[0257] M 2 =πw0θ / λ

[0258] w0 is the beam waist of the laser. The beam waist refers to the beam diameter at the point where the laser beam is most contracted. θ is the divergence angle of the laser. λ is the oscillation wavelength of the laser. The oscillation wavelength λ is, for example, above 1020 nm and below 1080 nm.

[0259] Beam quality factor M 2 For example, it can be 1.01 or higher, 1.02 or higher, or 1.04 or higher. Beam quality factor M 2 For example, it can be below 1.06, below 1.08, or below 1.10. Beam quality factor M 2 The range can be determined by a first group consisting of 1.01, 1.02, and 1.04 and / or a second group consisting of 1.06, 1.08, and 1.10. Beam quality factor M 2 The range can also be determined by combining any one of the values ​​included in group 1 above with any one of the values ​​included in group 2 above. Beam quality factor M 2 The range can also be determined by combining any two of the values ​​included in group 1 above. Beam quality factor M 2 The range can also be determined by any combination of two values ​​included in group 2 above. Beam quality factor M 2 For example, it can be 1.01 or higher and 1.10 or lower, 1.01 or higher and 1.08 or lower, 1.01 or higher and 1.06 or lower, 1.01 or higher and 1.04 or lower, 1.01 or higher and 1.02 or lower, 1.02 or higher and 1.10 or lower, 1.02 or higher and 1.08 or lower, 1.02 or higher and 1.06 or lower, 1.02 or higher and 1.04 or lower, 1.04 or higher and 1.10 or lower, 1.04 or higher and 1.08 or lower, 1.04 or higher and 1.06 or lower, 1.06 or higher and 1.10 or lower, 1.06 or higher and 1.08 or lower, and 1.08 or higher and 1.10 or lower.

[0260] The laser beam irradiated by the fixed device 94 onto the mask 50 can also be a fiber laser. For example, the laser can be a single-mode fiber laser. Fiber lasers are a type of solid-state laser. In fiber lasers, optical fibers are used as the medium for amplifying the laser beam.

[0261] Figure 13 This is a top view showing an example of the intensity distribution of laser light irradiating the first surface 551 of mask 50. Figure 13In the diagram, S20 indicates the laser spot diameter on the first plane 551. The spot diameter S20 is measured in the second direction D2.

[0262] The spot diameter S20 can be, for example, 10 μm or more, 30 μm or more, or 60 μm or more. The spot diameter S20 can be, for example, 80 μm or less, 95 μm or less, 120 μm or less, 180 μm or less, or 250 μm or less. The range of the spot diameter S20 can be determined by a first group consisting of 10 μm, 30 μm, and 60 μm and / or a second group consisting of 80 μm, 95 μm, 120 μm, 180 μm, and 250 μm. The range of the spot diameter S20 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the spot diameter S20 can also be determined by a combination of any two values ​​included in the first group. The range of the spot diameter S20 can also be determined by a combination of any two values ​​included in the second group. The spot diameter S20 can be, for example, greater than or equal to 10 μm and less than 250 μm, greater than or equal to 10 μm and less than 180 μm, greater than or equal to 10 μm and less than 120 μm, greater than or equal to 10 μm and less than 95 μm, greater than or equal to 10 μm and less than 80 μm, greater than or equal to 10 μm and less than 60 μm, greater than or equal to 10 μm and less than 30 μm, greater than or equal to 30 μm and less than 250 μm, greater than or equal to 30 μm and less than 180 μm, greater than or equal to 30 μm and less than 120 μm, greater than or equal to 30 μm and less than 95 μm, greater than or equal to 30 μm and less than 80 μm, greater than or equal to 30 μm and less than 60 μm, or greater than or equal to 60 μm and less than 250 μm. It can be above 60μm and below 180μm, it can be above 60μm and below 120μm, it can be above 60μm and below 95μm, it can be above 60μm and below 80μm, it can be above 80μm and below 250μm, it can be above 80μm and below 180μm, it can be above 80μm and below 120μm, it can be above 80μm and below 95μm, it can be above 95μm and below 250μm, it can be above 95μm and below 180μm, it can be above 95μm and below 120μm, it can be above 120μm and below 250μm, it can be above 120μm and below 180μm, it can be above 180μm and below 250μm.

[0263] The laser spot diameter is the diameter of the laser beam on the surface of the object being irradiated. The laser spot diameter can be equal to or greater than the theoretical beam diameter. The theoretical beam diameter is calculated using the following formula.

[0264] d2=(f2 / f1)×d1

[0265] d1 is the diameter of the fiber core, which is used as the medium for amplifying the laser in a fiber laser generating device. d2 is the theoretical beam diameter. f1 is the focal length of the collimating lens. f2 is the focal length of the condenser lens. (f2 / f1) is also known as the imaging ratio.

[0266] The theoretical beam diameter can be, for example, 5 μm or more, 10 μm or more, or 20 μm or more. The theoretical beam diameter can be, for example, less than 30 μm, less than 50 μm, or less than 80 μm. The range of the theoretical beam diameter can be determined by a first group consisting of 5 μm, 10 μm, and 20 μm and / or a second group consisting of 30 μm, 50 μm, and 80 μm. The range of the theoretical beam diameter can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the theoretical beam diameter can also be determined by a combination of any two of the values ​​included in the first group. The range of the theoretical beam diameter can also be determined by a combination of any two of the values ​​included in the second group. The theoretical beam diameter can be, for example, greater than 5μm and less than 80μm, greater than 5μm and less than 50μm, greater than 5μm and less than 30μm, greater than 5μm and less than 20μm, greater than 5μm and less than 10μm, greater than 10μm and less than 80μm, greater than 10μm and less than 50μm, greater than 10μm and less than 30μm, greater than 10μm and less than 20μm, greater than 20μm and less than 80μm, greater than 20μm and less than 50μm, greater than 20μm and less than 30μm, greater than 30μm and less than 80μm, greater than 30μm and less than 50μm, greater than 50μm and less than 80μm.

[0267] The intensity distribution of the laser irradiating the first surface 551 may include a first intensity region 61 and a second intensity region 62 surrounding the first intensity region. The intensity of the laser in the first intensity region 61 is higher than the intensity of the laser in the second intensity region 62. For example, the laser in the first intensity region 61 has an intensity greater than k×Pm. Pm is the peak intensity of the laser. k is a constant greater than 0 and less than 1. k is, for example, 0.50.

[0268] The fixed device 94 can also intermittently irradiate the first surface 551 with a certain repetition cycle. The fixed device 94, which intermittently irradiates the first surface 551 with laser, can also be moved by the moving mechanism 91. The number of pulses irradiating the first surface 551 at a position can be one or more.

[0269] The repetition period of the laser can be, for example, greater than 100 ns, greater than 1 μs, or greater than 10 μs. The repetition period can also be less than 1 ms, less than 10 ms, or less than 1 s. The range of the repetition period can be determined by a first group consisting of 100 ns, 1 μs, and 10 μs, and / or a second group consisting of 1 ms, 10 ms, and 1 s. The range of the repetition period can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the repetition period can also be determined by a combination of any two values ​​included in the first group. The range of the repetition period can also be determined by a combination of any two values ​​included in the second group. The repetition period can be, for example, greater than 100 ns and less than 1 s, greater than 100 ns and less than 1 ms, greater than 100 ns and less than 1 ms, greater than 100 ns and less than 10 μs, greater than 100 ns and less than 1 μs, greater than 1 μs and less than 1 s, greater than 1 μs and less than 1 ms, greater than 1 μs and less than 1 ms, greater than 1 μs and less than 1 ms, greater than 1 ms and less than 1 s, greater than 1 ms and less than 1 s, greater than 1 ms and less than 1 s, or greater than 10 ms and less than 1 s.

[0270] The pulse width of a laser can be, for example, greater than 100 ps, ​​greater than 100 ns, or greater than 100 μs. The pulse width can be, for example, less than 500 μs, less than 2 ms, or less than 10 ms. The range of pulse width can be determined by a first group consisting of 100 ps, ​​100 ns, and 100 μs, and / or a second group consisting of 500 μs, 2 ms, and 10 ms. The range of pulse width can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of pulse width can also be determined by a combination of any two of the values ​​included in the first group. The range of pulse width can also be determined by a combination of any two of the values ​​included in the second group. The pulse width can be, for example, greater than 100 ps and less than 10 ms, greater than 100 ps and less than 2 ms, greater than 100 ps and less than 500 μs, greater than 100 ps and less than 100 μs, greater than 100 ps and less than 100 ns, greater than 100 ns and less than 10 ms, greater than 100 ns and less than 2 ms, greater than 100 ns and less than 500 μs, greater than 100 ns and less than 100 μs, greater than 100 μs and less than 10 ms, greater than 100 μs and less than 2 ms, greater than 100 μs and less than 500 μs, greater than 500 μs and less than 10 ms, greater than 500 μs and less than 2 ms, greater than 2 ms and less than 10 ms.

[0271] The fixing device 94 can also continuously irradiate the first surface 551 with laser light. That is, the fixing device 94 can also irradiate the first surface 551 with a continuous wave laser light.

[0272] Figure 14 This is a graph illustrating an example of the intensity distribution of a multimode laser. For example... Figure 14 As shown, the intensity distribution of multimode lasers has multiple maxima.

[0273] Next, the method for manufacturing the mask assembly 15 using the manufacturing apparatus 80 will be described. First, a frame 40 is prepared. The frame 40 may also be placed on a worktable (not shown) of the manufacturing apparatus 80.

[0274] Next, the installation process of sequentially mounting N masks 50 onto the frame 40 is performed. The process of mounting the k-th mask 50 (where k is an integer greater than 2 and less than N) onto the frame 40 is also called the k-th installation process. The installation process includes N steps from the first installation process to the Nth installation process.

[0275] Installation step S4 may include a pressing step and a fixing step. In this case, the pressing step and the fixing step are repeated N times in the installation step. The pressing step and the fixing step in the kth installation step are also referred to as the kth pressing step and the kth fixing step.

[0276] In the pressing process, pressing force is applied to the first side 41 and the second side 42 using the pressing mechanism 82 in the direction toward the opening 45. The pressing process may also include a pressing force adjustment process to adjust the pressing force. In the pressing force adjustment process, the pressing force applied to the first side 41 and the second side 42 by the pressing mechanism 82 is controlled by a control device. The control device may also control the pressing mechanism 82 in such a way that each pressing device 83 applies a predetermined pressing force to the first side 41 and the second side 42. The predetermined pressing force is also referred to as the target pressing force. The target pressing force may also be determined individually for each pressing device 83.

[0277] The target pressing force can also be determined individually in each of the N pressing steps. When the mask 50 is fixed to the frame 40, the first side 41 and the second side 42 of the frame 40 are subjected to an inward force from the mask 50. The direction of the pressing force applied by the pressing mechanism 82 to the first side 41 and the second side 42 is the same as the direction of the force subjected to the first side 41 and the second side 42 from the mask 50. The target pressing force can also be determined in a way that decreases as the number of masks 50 fixed to the frame 40 increases. For example, the target pressing force in the Nth pressing step can be smaller than the target pressing force in the first pressing step.

[0278] When the first side 41 and the second side 42 are pressed inward, they elastically deform inward in the first direction D1. At this time, a restoring force is generated on the first side 41 and the second side 42 in the first direction D1, moving outward. When the mask 50 is fixed on the first side 41 and the second side 42 in the state of elastic deformation inward, the mask 50 is stretched outward by the restoring force in the first direction D1.

[0279] The target pressing force can be calculated based on the shape and properties of the frame 40. For example, it can also be calculated using the finite element method based on the three-dimensional shape of the frame 40 created through CAD or similar means, to determine the relationship between the pressing force, deformation, and restoring force. The target pressing force can then be calculated based on this relationship.

[0280] In the fixing process, the end 51 of the mask 50 is fixed to the first side 41 and the second side 42. The k-th fixing process may also include a position adjustment process for adjusting the position of the k-th mask 50 and a welding process.

[0281] In the position adjustment process, the position of the mask 50 can also be adjusted while tension is applied to it. By using the aforementioned moving mechanism 91 and stretching device, the position of the mask 50 can be adjusted while tension is applied to it. In the position adjustment process, the moving mechanism 91 and stretching device can be controlled to make the position of the k-th mask 50 relative to the frame 40 the target position. For example, in the position adjustment process, the stretching device and fixing device 94 can be controlled based on information from the aforementioned observation device 93.

[0282] In the welding process, the k-th mask 50 is welded to the first side 41 and the second side 42. By using the aforementioned fixing device 94, the mask 50 can be fixed to the first side 41 and the second side 42.

[0283] The installation process is described in detail. In this embodiment, the following example is used: the mask 50 is installed on the first side 41 and the second side 42 in order of distance from the center of the frame 40 in the second direction D2. When the distances relative to the center of the frame 40 in the second direction D2 are the same, the mask 50 located between the third side 43 and the second center line Lc2 is installed on the first side 41 and the second side 42 before the mask 50 located between the fourth side 44 and the second center line Lc2.

[0284] The first installation step involves mounting the first mask 50 onto the frame 40. The first installation step includes a first pressing step and a first fixing step.

[0285] Figure 15 This diagram illustrates the first pressing step. The first pressing step includes a pressing force adjustment step. (As shown...) Figure 15 As shown, in the pressure adjustment process, the first side 41 and the second side 42 are pressed when the mask 50 is not installed on the frame 40.

[0286] The first fixed process includes the position adjustment process and the welding process. Figure 16 This is a diagram showing the position adjustment process.

[0287] like Figure 16 As shown, in the position adjustment process, the position of the first mask 50 is adjusted while tension is applied to it. In this process, a tensioning device 96 is used to adjust the position of the first mask 50. The tensioning device 96 can also use clamps to apply tension to the first mask 50. The tensioning device 96 may include, for example, multiple clamps 961 mounted on the first end 51 and multiple clamps 961 mounted on the second end 51. By adjusting the position of each clamp 961, the position and tension of the first mask 50 can be adjusted.

[0288] Figure 17This diagram illustrates the welding process. In the welding process, a laser is irradiated onto the first surface 551 of the end 51 of the mask 50, which is under tension. As a result, a weld portion 58 is formed at the end 51. The first mask 50 is fixed to the first side 41 and the second side 42 via the weld portion 58.

[0289] Figure 18 This is a diagram illustrating an example of the process of forming weld 58. Figure 18 The image shows a welded portion 58 formed when a single-mode laser is irradiated onto a mask 50. The welded portion 58 is formed by irradiating the metal material constituting the mask 50 with a laser to melt the metal material, and then solidifying the metal material sequentially from the lower temperature portions.

[0290] Single-mode lasers exhibit an intensity distribution that monotonically decreases in intensity from the center of the laser spot outwards. For example, single-mode lasers have a Gaussian intensity distribution. In this case, such as... Figure 18 As indicated by the arrow, the weld portion 58 is formed by laser-melted metal material gradually solidifying from the outer edge 585 toward the center point 583. Therefore, the surface contour of the weld portion 58 becomes smooth. For example, the maximum height and arithmetic mean height of the surface of the weld portion 58 decrease.

[0291] The welding process can also be performed in a manner that ensures the welded part 58 has the desired unit peel strength. For example, the laser conditions in the welding process can also be adjusted to achieve the desired unit peel strength. The laser conditions include the laser mode, wavelength, spot diameter, peak intensity, and beam quality factor M. 2 And so on. When the laser intermittently irradiates the first surface 551, the laser conditions can also be the repetition period, pulse width, etc.

[0292] By increasing the unit peel strength of the weld 58, the area of ​​a single weld 58 can be reduced. This helps to suppress undulations around the weld 58 on the first surface 551.

[0293] The unit peel strength of the weld 58 can be, for example, 5.0 × 10⁻⁶. -6 N / μm 2 The above can be 6.0×10 -6 N / μm 2 The above can be 7.0×10 -6 N / μm 2 The above can also be 10.0 × 10 -6 N / μm 2 The above. For example, the unit peel strength can be 15.0 × 10⁻⁶. -6 N / μm 2 The following can be 20.0×10 -6N / μm 2 The following can be 25.0×10 -6 N / μm 2 The following can also be 30.0×10 -6 N / μm 2 The following is a range of unit peel strength, which can be determined by 5.0 × 10⁻⁶. -6 N / μm 2 6.0×10 -6 N / μm 2 7.0×10 -6 N / μm 2 and 10.0×10 -6 N / μm 2 The first group constitutes and / or consists of 15.0 × 10 -6 N / μm 2 20.0×10 -6 N / μm 2 25.0×10 -6 N / μm 2 and 30.0×10 -6 N / μm 2 The range of unit peel strength can also be determined by combining any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of unit peel strength can also be determined by combining any two of the values ​​included in the first group. The range of unit peel strength can also be determined by combining any two of the values ​​included in the second group. For example, unit peel strength could be 5.0 × 10⁻⁶. -6 N / μm 2 Above and 30.0×10 -6 N / μm 2 The following can be 5.0×10 -6 N / μm 2 Above and 25.0×10 -6 N / μm 2 The following can be 5.0×10 -6 N / μm 2 Above and 20.0×10 -6 N / μm 2 The following can be 5.0×10 -6 N / μm 2 Above and 15.0×10 -6 N / μm 2 The following can be 5.0×10 -6 N / μm 2 Above and 10.0×10 -6 N / μm 2 The following can be 5.0×10-6 N / μm 2 Above and 7.0×10 -6 N / μm 2 The following can be 5.0×10 -6 N / μm 2 Above and 6.0×10 -6 N / μm 2 The following can be 6.0×10 -6 N / μm 2 Above and 30.0×10 -6 N / μm 2 The following can be 6.0×10 -6 N / μm 2 Above and 25.0×10 -6 N / μm 2 The following can be 6.0×10 -6 N / μm 2 Above and 20.0×10 -6 N / μm 2 The following can be 6.0×10 -6 N / μm 2 Above and 15.0×10 -6 N / μm 2 The following can be 6.0×10 -6 N / μm 2 Above and 10.0×10 -6 N / μm 2 The following can be 6.0×10 -6 N / μm 2 Above and 7.0×10 -6 N / μm 2 The following can be 7.0×10 -6 N / μm 2 Above and 30.0×10 -6 N / μm 2 The following can be 7.0×10 -6 N / μm 2 Above and 25.0×10 -6 N / μm 2 The following can be 7.0×10 -6 N / μm 2 Above and 20.0×10 -6 N / μm 2 The following can be 7.0×10 -6 N / μm 2 Above and 15.0×10 -6 N / μm 2 The following can be 7.0×10 -6 N / μm2 Above and 10.0×10 -6 N / μm 2 The following can be 10.0×10 -6 N / μm 2 Above and 30.0×10 -6 N / μm 2 The following can be 10.0×10 -6 N / μm 2 Above and 25.0×10 -6 N / μm 2 The following can be 10.0×10 -6 N / μm 2 Above and 20.0×10 -6 N / μm 2 The following can be 10.0×10 -6 N / μm 2 Above and 15.0×10 -6 N / μm 2 The following can be 15.0×10 -6 N / μm 2 Above and 30.0×10 -6 N / μm 2 The following can be 15.0×10 -6 N / μm 2 Above and 25.0×10 -6 N / μm 2 The following can be 15.0×10 -6 N / μm 2 Above and 20.0×10 -6 N / μm 2 The following can be 20.0×10 -6 N / μm 2 Above and 30.0×10 -6 N / μm 2 The following can be 20.0×10 -6 N / μm 2 Above and 25.0×10 -6 N / μm 2 The following can be 25.0×10 -6 N / μm 2 Above and 30.0×10 -6 N / μm 2 the following.

[0294] The unit peel strength of the welded part 58 is calculated by dividing the peel strength of the welded part 58 by the area of ​​the welded part 58 when viewed from above. Figure 19This is a top view showing sample 71 used for measuring peel strength. Sample 71 is a metal plate simulating mask 50. The thickness of sample 71 corresponds to the thickness of mask 50. Sample 71 has a length S11 and a width S12. The length S11 is 150 mm. The width S12 is 9 mm.

[0295] like Figure 19 As shown, sample 71 comprises 10 welded portions 72 arranged along its length at a spacing P11 of 10 mm. Sample 71 is fixed to support 73 by the welded portions 72. Support 73 is a metal component of the simulated frame 40.

[0296] Figure 20 This is a diagram illustrating the method for measuring peel strength. (As shown) Figure 20 As shown, one end of the sample 71 in the longitudinal direction is held by a clamp 74. Then, the clamp 74 is lifted upwards along the normal direction of the upper surface of the support 73. This applies an upward force to a weld 72. If the upward force exceeds the strength of the weld 72, the weld 72 breaks. The force applied to the weld 72 at the time of breakage is stored as the peel strength of the weld 72. The force is measured using a force gauge.

[0297] Peel strength measurements were repeatedly performed on each of the 10 welded portions 72. During this process, the position of the support body 73 was adjusted so that the force applied to the welded portion 72 was parallel to the normal direction of the upper surface of the support body 73. The peel strength per unit area was calculated by dividing the peel strength by the area of ​​the welded portion 72. The unit peel strength was calculated by averaging the peel strength per unit area at the 10 welded portions 72.

[0298] The area of ​​the welded portion 72 is calculated based on its dimension along the length of the sample 71. The area of ​​the welded portion 72 is calculated based on the assumption that it is circular. Specifically, the area of ​​the welded portion 72 is π×(S²' / 2). 2 S2' is the dimension of the welded part 72 along the length of the sample 71.

[0299] The welding process can also be performed in a manner that gives the welded portion 58 the desired strength parameters. For example, the laser conditions in the welding process can also be adjusted to give the desired strength parameters. The strength parameter is the value obtained by dividing the dimension S2' of the welded portion 58 in top view by the unit peel strength.

[0300] The strength parameter of the welded part 58 can be, for example, 2.0 × 10⁻⁶. 6 μm 3 / N or higher, can be 5.0×10 6 μm 3 / N or higher, can be 7.0×10 6 μm 3 / N or higher can also be 10.0×10 6 μm 3 / N or higher. For example, the strength parameter could be 15.0 × 10⁻⁶. 6 μm 3 For values ​​below / N, it can be 20.0×10 6 μm 3 For values ​​below / N, it can be 25.0×10 6 μm 3 For values ​​below / N, it can also be 30.0×10. 6 μm 3 / N or less. The range of strength parameters can be determined by 2.0 × 10 6 μm 3 / N、5.0×10 6 μm 3 / N、7.0×10 6 μm 3 / N and 10.0×10 6 μm 3 The first group consisting of / N and / or composed of 15.0×10 6 μm 3 / N、20.0×10 6 μm 3 / N、25.0×10 6 μm 3 / N and 30.0×10 6 μm 3 The second group, consisting of / N, determines the strength parameter. The range of the strength parameter can also be determined by combining any one of the values ​​included in the first group with any one of the values ​​included in the second group. The range of the strength parameter can also be determined by combining any two of the values ​​included in the first group. The range of the strength parameter can also be determined by combining any two of the values ​​included in the second group. For example, the strength parameter could be 2.0 × 10⁻⁶. 6 μm 3 / N or higher and 30.0×10 6 μm 3 For values ​​below / N, it can be 2.0×10. 6 μm 3 / N or higher and 25.0×10 6 μm 3 For values ​​below / N, it can be 2.0×10. 6 μm 3 / N or higher and 20.0×10 6 μm 3 For values ​​below / N, it can be 2.0×10. 6 μm3 / N or higher and 15.0×10 6 μm 3 For values ​​below / N, it can be 2.0×10. 6 μm 3 / N or higher and 10.0×10 6 μm 3 For values ​​below / N, it can be 2.0×10. 6 μm 3 / N or higher and 7.0×10 6 μm 3 For values ​​below / N, it can be 2.0×10. 6 μm 3 / N or higher and 5.0×10 6 μm 3 For values ​​below / N, it can be 5.0×10. 6 μm 3 / N or higher and 30.0×10 6 μm 3 For values ​​below / N, it can be 5.0×10. 6 μm 3 / N or higher and 25.0×10 6 μm 3 For values ​​below / N, it can be 5.0×10. 6 μm 3 / N or higher and 20.0×10 6 μm 3 For values ​​below / N, it can be 5.0×10. 6 μm 3 / N or higher and 15.0×10 6 μm 3 For values ​​below / N, it can be 5.0×10. 6 μm 3 / N or higher and 10.0×10 6 μm 3 For values ​​below / N, it can be 5.0×10. 6 μm 3 / N or higher and 7.0×10 6 μm 3 For values ​​below / N, it can be 7.0×10. 6 μm 3 / N or higher and 30.0×10 6 μm 3 For values ​​below / N, it can be 7.0×10. 6 μm 3 / N or higher and 25.0×10 6 μm 3 For values ​​below / N, it can be 7.0×10. 6 μm 3 / N or higher and 20.0×10 6 μm 3 For values ​​below / N, it can be 7.0×10. 6 μm 3 / N or higher and 15.0×10 6 μm 3 For values ​​below / N, it can be 7.0×10. 6 μm 3 / N or higher and 10.0×10 6 μm 3 For values ​​below / N, it can be 10.0×10. 6 μm 3 / N or higher and 30.0×10 6 μm 3 For values ​​below / N, it can be 10.0×10. 6 μm 3 / N or higher and 25.0×10 6 μm 3 For values ​​below / N, it can be 10.0×10. 6 μm 3 / N or higher and 20.0×10 6 μm 3 For values ​​below / N, it can be 10.0×10. 6 μm 3 / N or higher and 15.0×10 6 μm 3 For values ​​below / N, it can be 15.0×10 6 μm 3 / N or higher and 30.0×10 6 μm 3 For values ​​below / N, it can be 15.0×10 6 μm 3 / N or higher and 25.0×10 6 μm 3 For values ​​below / N, it can be 15.0×10 6 μm 3 / N or higher and 20.0×10 6 μm 3 For values ​​below / N, it can be 20.0×10 6 μm 3 / N or higher and 30.0×10 6 μm 3 For values ​​below / N, it can be 20.0×10 6 μm 3 / N or higher and 25.0×10 6 μm 3 For values ​​below / N, it can be 25.0×10 6 μm 3 / N or higher and 30.0×10 6 μm 3 / N and below.

[0301] A finishing process can also be performed after the welding process, in which the portion of the end 51 located outside the welded portion 58 is removed. Alternatively, a finishing process for the N masks 50 can be performed after the N masks 50 are mounted on the frame 40.

[0302] Next, as Figure 21 As shown, a second installation step is performed to mount the second mask 50 onto the frame 40. The second installation step includes a second pressing step and a second fixing step.

[0303] Next, installation steps 3 through 10 are performed sequentially. This results in the installation of masks 3 through 10 onto the frame 40.

[0304] Next, the release process is performed. In the release process, the pressing force applied to the first side 41 and the second side 42 is reduced to zero.

[0305] According to this embodiment, a single-mode laser is used to form the weld portion 58 of the mask 50. By using a single-mode laser, the contour of the surface of, for example, the weld portion 58 becomes smooth. By using a single-mode laser, the unit peel strength of, for example, the weld portion 58 increases, and thus the area of ​​a single weld portion 58 is reduced. These all help to suppress undulations around the weld portion 58.

[0306] If the effects of fluctuations affect the through-hole 56 of the mask 50, the position of the through-hole 56 may sometimes deviate from the target position. When tension is applied to the mask 50, the effects of fluctuations are more likely to affect the through-hole 56. According to this embodiment, by using a single-mode laser to form the weld portion 58 of the mask 50, it is possible to suppress the deviation of the through-hole 56 from the target position.

[0307] The peel strength of the welded portion 58 of the mask 50 of the mask assembly 15 can also be measured using the same method as the peel strength of the welded portion 72 of the sample 71. Specifically, firstly, the middle portion 52 of the mask 50 welded to the frame 40 is cut off in the width direction. Next, the end of the cut middle portion 52 is held using a clamp. Then, the clamp is lifted upward along the normal direction of the first frame surface 401 of the frame 40. As a result, an upward force is applied to a welded portion 58. If the upward force is higher than the strength of the welded portion 58, the welded portion 58 breaks. The force applied to the welded portion 58 when the welded portion 58 breaks is stored as the peel strength of the welded portion 58. The force is measured using a force gauge. In the process of measuring peel strength, the portion of the frame 40 welded to the mask 50 is disconnected from the other parts of the frame 40. As a result, the movement of the frame 40 in the process of measuring peel strength becomes easier.

[0308] [Example]

[0309] The embodiments of this disclosure will be further described in detail below through examples. However, the embodiments of this disclosure are not limited to the description of the following embodiments as long as they do not depart from its spirit.

[0310] (Example 1)

[0311] Ten welded portions 72 were formed on the sample 71 on the support 73 using a single-mode fiber laser. An iron alloy containing 36% by mass nickel was used as the material constituting the sample 71 and the support 73. The sample 71 has a thickness of 10 μm.

[0312] The device used to generate fiber laser light was the MF-C300A-SF manufactured by Amada-Weld-Tech Co., Ltd. The conditions for the fiber laser are as follows.

[0313] • Oscillation wavelength: 1070nm±10nm

[0314] Peak output power (Pw): 100W

[0315] • Ta during the uphill section: 0.7ms

[0316] • Pulse width Tb: 0.7ms

[0317] • Fiber core diameter d1: 22μm

[0318] • Beam spot diameter: 22μm (theoretical beam diameter d2)

[0319] like Figure 35 As shown, Ta during the uphill segment is the period during which the laser output P increases. The pulse width Tb is the period during which the laser output P has a peak output Pw.

[0320] In Example 1, the sample 71 was irradiated with laser in such a way that the laser spot diameter was equal to the theoretical laser beam diameter d2.

[0321] Images and surface height profiles of the weld 72 were obtained using a laser microscope. A VK-X 3100 laser microscope manufactured by KEYENCE Corporation was used. Figure 22A This is an image of welded section 72. Figure 22B and Figure 22C This refers to the surface height profile of welded part 72. Figure 22B In the image, the height of the surface of the welded portion 72 in the face direction of sample 71 is represented by the image density. Figure 22C The image shows the height of the surface of the weld 72 at various positions along the length of the sample 71. For example... Figure 22C As shown, the welded portion 72 includes a protrusion. It can be assumed that the welded portion 72 in Example 1 is formed in a state where the lower surface of the sample 71 is in contact with the upper surface of the support 73.

[0322] (Example 2)

[0323] Using the same laser, sample 71, and support 73 as in Example 1, ten weld portions 72 are formed on the sample 71 on the support 73. Then, using the same laser microscope as in Example 1, images and surface height profiles of the weld portions 72 are obtained. Figure 23A This is an image of welded section 72. Figure 23B and Figure 23C This refers to the surface height profile of welded part 72. For example... Figure 23C As shown, the weld portion 72 includes a recess. It can be considered that the weld portion 72 in Example 2 is formed with a gap between the lower surface of the sample 71 and the upper surface of the support 73.

[0324] (Example 3)

[0325] Ten welded portions 72 were formed on the sample 71 on the support 73 using a multimode laser. The sample 71 and the support 73 were the same as in Example 1.

[0326] The ML-2050A manufactured by Amada-Weld-Tech Co., Ltd. was used as the device for generating multimode laser. The conditions for multimode laser are as follows.

[0327] • Oscillation wavelength: 1064nm

[0328] Peak output: 6kW

[0329] • Pulse width: less than 10ms

[0330] • Spot diameter: less than 350μm

[0331] Using the same laser microscope as in Example 1, an image of the weld 72 and its surface height profile were obtained. Figure 24A This is an image of welded section 72. Figure 24B and Figure 24C This refers to the surface height profile of welded part 72. For example... Figure 24C As shown, a recess appears along the outer edge of the welded portion 72, and a convex portion appears at the center point of the welded portion 72. The depth of the recess is the same as the height of the convex portion.

[0332] (Example 4)

[0333] Using the same laser, sample 71, and support 73 as in Example 3, ten weld portions 72 were formed on the sample 71 on the support 73. Then, using the same laser microscope as in Example 1, images and surface height profiles of the weld portions 72 were obtained. Figure 25A This is an image of welded section 72. Figure 25B and Figure 25C It is the surface height profile of the welded part 72.

[0334] (Example 5)

[0335] Ten weld portions 72 are formed on the sample 71 on the support 73 using a multimode laser. In Example 5, the sample 71 is continuously irradiated with a multimode laser during the formation of one weld portion 72. Alternatively, in Example 5, the sample 71 is irradiated with a multimode laser in a manner that the laser spot moves around the outer edge of the weld portion 72 during the formation of one weld portion 72. The sample 71 and the support 73 are the same as in Example 1.

[0336] The RAY-30P-170 manufactured by RAYXION was used as the device for generating multimode laser. The conditions for multimode laser are as follows.

[0337] • Oscillation wavelength: 1070nm

[0338] Peak power: 12kW

[0339] Using the same laser microscope as in Example 1, an image of the weld 72 and its surface height profile were obtained. Figure 26A This is an image of welded section 72. Figure 26B and Figure 26C This refers to the surface height profile of welded part 72. For example... Figure 26B As shown, the welded portion 72 includes multiple protrusions that are separated from each other.

[0340] (Example 6)

[0341] Using the same laser, sample 71, and support 73 as in Example 5, ten weld portions 72 were formed on the sample 71 on the support 73. Then, using the same laser microscope as in Example 1, images and surface height profiles of the weld portions 72 were obtained. Figure 27A This is an image of welded section 72. Figure 27B and Figure 27C It is the surface height profile of the welded part 72.

[0342] (First-class rating)

[0343] Along in Figure 28A Using the paths indicated by arrows numbered 1 to 4, measure the surface profile of sample 71 around welded portion 72 in Example 2. Figure 28B It represents the surface profile. Figure 28A The path shown is a square surrounding the weld portion 72. One side of the square is 500 μm in length. (Example: ...) Figure 28B As shown, the surface undulation of the sample 71 around the welded part 72 is in the range of -1μm to +1μm.

[0344] Along in Figure 29A Using the paths indicated by arrows numbered 1 to 4, measure the surface profile of sample 71 around welded portion 72 in Example 3. Figure 29B It represents the surface profile. Figure 29A The path shown is a square surrounding the weld portion 72. One side of the square is 500 μm in length. (Example: ...) Figure 29B As shown, the surface undulation of the sample 71 around the welded part 72 is in the range of -5μm to +5μm.

[0345] Along in Figure 30A Using the paths indicated by arrows numbered 1 to 4, measure the surface profile of sample 71 around welded portion 72 in Example 6. Figure 30B It represents the surface profile. Figure 30A The path shown is a square surrounding the weld portion 72. One side of the square is 500 μm in length. (Example: ...) Figure 30B As shown, the surface undulation of the sample 71 around the welded part 72 is in the range of -2μm to +2μm.

[0346] (2nd evaluation)

[0347] The dimension S2' of the welded portion 72 in Example 2, viewed from above, was calculated based on an image obtained using a laser microscope. The dimension S2' of the welded portion 72, viewed from above, is 148.1 μm. Based on the dimension S2', the area of ​​the welded portion 72 was calculated. As described above, the area of ​​the welded portion 72 is based on the formula π×(S2' / 2). 2 It was calculated using... Additionally, using... Figure 20The method shown calculates the peel strength and unit peel strength of the weld 72. This is used for measurement... Figure 20 The force gauge used to apply the force to the welded portion 72 by the clamp 74 was a DST-200N manufactured by IMADA Corporation. A load measuring stand MX2-500N manufactured by IMADA Corporation was used as the device for lifting the clamp 74 and the force gauge upwards. The aforementioned strength parameters of the welded portion 72 were calculated based on the unit peel strength and dimension S2'. The results are shown below. Figure 31 .

[0348] Similar to the case of weld 72 in Example 2, the dimension S2', peel strength, unit peel strength, and strength parameters were calculated for weld 72 in Example 3. The dimension S2' of weld 72 in top view is 247.2 μm. The dimension S2' and other results are shown in... Figure 31 .

[0349] Similar to the case of weld 72 in Example 2, the dimension S2', peel strength, unit peel strength, and strength parameters were calculated for weld 72 in Example 6. The dimension S2' of weld 72 in top view is 203.5 μm. The dimension S2' and other results are shown in... Figure 31 .

[0350] Figure 32 It is a graph showing the relationship between the dimension S2' of the welded part 72 and the unit peel strength in Examples 2, 3 and 6. Figure 33 It is a graph showing the relationship between the dimension S2' of the welded part 72 and the strength parameter in Examples 2, 3 and 6.

[0351] (3rd evaluation)

[0352] The weld 72 is evaluated based on the first ratio α and the second ratio β mentioned above. Specifically, multiple first samples and multiple second samples are prepared. The thickness of each sample is 10 μm or 26 μm.

[0353] Each of the multiple first samples, like in Example 1, comprises 10 welded portions 72 formed using a single-mode fiber laser. In each of the multiple first samples, the fiber laser irradiation conditions are different.

[0354] Each of the second samples, like in Example 3, contains 10 welded portions 72 formed using a multimode laser. In each of the second samples, the multimode laser irradiation conditions are different.

[0355] In multiple first samples and multiple second samples, the aforementioned first ratio α, second ratio β, and unit peel strength of the welded portion 72 were calculated. Figure 34 This is a graph showing the evaluation results of the first ratio α and the second ratio β. Figure 34 The horizontal axis represents the first ratio α. Figure 34 The vertical axis represents the second ratio β. The circular markers represent the results for the first sample. The unit peel strength of the first sample is 6.0 × 10⁻⁶. -6 N / μm 2 The above. The triangle indicates the result for sample 2. The peel strength per unit of sample 2 is less than 6.0 × 10⁻⁶. -6 N / μm 2 .

[0356] like Figure 34 As shown, in the first sample, the first ratio α is 0.0 or higher, and the second ratio β is 0.0 or higher. On the other hand, in the second sample, the first ratio α is less than 0.0, or the second ratio β is less than 0.0.

[0357] like Figure 34 As shown, the circular marker is located between lines L1 and L2. Line L1 corresponds to β = 0.025α. Line L2 corresponds to β = 0.150α. (The last sentence appears to be incomplete and possibly refers to a graph with a length of 6.0 × 10⁻⁶.) -6 N / μm 2 In the first sample with the above unit peel strength, 0.025≤β / α≤0.150 is satisfied.

[0358] (Examples A1~A4)

[0359] Using the same fiber laser, sample 71, and support 73 as in Example 1, 10 weld portions 72 are formed on the sample 71 on the support 73. The conditions for the fiber laser are as follows.

[0360] • Oscillation wavelength: 1070nm±10nm

[0361] Peak output power (Pw): 200W

[0362] • Ta during the uphill section: 1.0ms

[0363] • Pulse width Tb: 1.0ms

[0364] • Fiber core diameter d1: 22μm

[0365] • Beam spot diameter: 22μm (theoretical beam diameter d2)

[0366] Using the same laser microscope as in Example 1, images and surface height profiles of the welded portions 72 in Examples A1 to A4 were obtained. Figure 36A This is an image of welded part 72 in example A1. Figure 36B and Figure 36C This is the surface height profile of welded part 72 in example A1. For example... Figure 36CAs shown, the weld portion 72 in example A1 includes a protrusion. Although not shown, the weld portions 72 in examples A2 to A4 also include protrusions.

[0367] Similar to the case of weld 72 in Example 2, the dimension S2', peel strength, unit peel strength, and strength parameters were calculated for welds 72 in Examples A1 to A4. The dimensions S2' of welds 72 in Examples A1 to A4, viewed from top, are 203.7 μm, 209.4 μm, 211.5 μm, and 207.8 μm, respectively. The dimensions S2' and other results are shown below. Figure 38 For example, the welded parts 72 of A1 to A4 all have a diameter of 20.0 × 10 mm. -6 N / μm 2 The above unit peel strength and 15.0×10 6 μm 3 Strength parameters below / N.

[0368] (Examples A5-A8)

[0369] Using the same fiber laser, sample 71, and support 73 as in Example 1, 10 weld portions 72 are formed on the sample 71 on the support 73. The conditions for the fiber laser are as follows.

[0370] • Oscillation wavelength: 1070nm±10nm

[0371] Peak output power (Pw): 250W

[0372] • Ta during the uphill section: 1.0ms

[0373] • Pulse width Tb: 1.0ms

[0374] • Fiber core diameter d1: 22μm

[0375] • Beam spot diameter: 22μm (theoretical beam diameter d2)

[0376] Using the same laser microscope as in Example 1, images and surface height profiles of the welded portions 72 in Examples A5 to A8 were obtained. Figure 37A This is an image of welded part 72 in example A5. Figure 37B and Figure 37C This is the surface height profile of welded part 72 in example A5. For example... Figure 37C As shown, the weld portion 72 in example A5 includes a protrusion. Although not shown, the weld portions 72 in examples A6 to A8 also include protrusions.

[0377] Similar to the case of weld 72 in Example 2, the dimension S2', peel strength, unit peel strength, and strength parameters were calculated for weld 72 in Examples A5 to A8. The dimensions S2' of weld 72 in Examples A5 to A8, viewed from top, are 227.8 μm, 227.4 μm, 229.9 μm, and 219.2 μm, respectively. The dimension S2' and other results are shown below. Figure 38 For example, the welded parts 72 of A5 to A8 all have a diameter of 15.0 × 10 mm. -6 N / μm 2 The above unit peel strength and 15.0×10 6 μm 3 Strength parameters below / N.

Claims

1. A mask device, characterized in that, The mask device includes: A frame, comprising a first frame surface and a second frame surface located opposite the first frame surface; and A mask comprising a second surface facing the first surface of the frame, a first surface located on the opposite side of the second surface, a plurality of through holes extending from the first surface to the second surface, and a plurality of welded portions welded to the first surface of the frame. The welded portion has a first ratio α of 0.0 or higher and a second ratio β of 0.0 or higher. The first ratio α and the second ratio β are expressed by the following formula: α=H12 / H34 β=H12 / H24 H12 = H1 - H2 H24 = H2 - H4 H34 = H3 - H4 H1 is the average height of the surface of the welded portion measured along the contour of the first imaginary circle. The first imaginary circle is an imaginary circle having a diameter equal to 0.25 times the size of the welded part when viewed from above, and having a center point that is the same as the center point of the welded part. H2 is the average height of the surface of the welded portion measured along the contour of the second imaginary circle. The second imaginary circle is an imaginary circle having a diameter equal to 0.50 times the size of the welded part when viewed from above, and having a center point that is the same as the center point of the welded part. H3 is the average height of the surface of the welded portion measured along the contour of the third imaginary circle. The third imaginary circle is an imaginary circle with a diameter equal to 0.90 times the size of the welded part in a top view, and with a center point that is the same as the center point of the welded part. H4 is the average height of the surface of the welded portion measured along the contour of the fourth imaginary circle. The fourth imaginary circle is an imaginary circle having a diameter equal to the size of the welded part when viewed from above, and having a center point that is the same as the center point of the welded part. The ratio of the second ratio β to the first ratio α is greater than 0.025 and less than 0.

150.

2. The mask device according to claim 1, characterized in that, The welded portion has a size of less than 250 μm when viewed from above.

Images