Magnetic cavity sputtering device for improving target utilization

CN224768862UActive Publication Date: 2026-09-18HANGZHOU JINGTONG TECH CO LTD
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Patent Information

Application Number
CN202522297631.0
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-10-30
Publication Date
2026-09-18
Estimated Expiration
2035-10-30

AI Technical Summary

Technical Problem

[0003]实用新型目的:本实用新型的目的是提供一种提高靶材利用率的磁腔溅射装置,能够改善溅射靶材磁场分布不均匀,导致的靶材利用率不足的问题

Benefits of technology

[0021] This application uses a combination of horizontal and vertical adjustment components to adjust the position of the mounting bracket in the horizontal direction, thereby adjusting the position of the magnetron and ultimately changing the magnetic field distribution on the target material, thus improving the problem of insufficient target utilization caused by uneven magnetic field distribution on the sputtering target material.

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Abstract

The utility model discloses a kind of magnetron sputtering devices of target material utilization rate improvement, including the cavity of physical meteorological deposition cavity, the top of cavity is provided with target material, the top of target material is provided with backplate, backplate is sealedly connected with cavity by rubber sealing ring, the top end surface of cavity is provided with magnetron motion device, magnetron motion device includes magnetron, fixed frame, horizontal adjusting assembly and vertical adjusting assembly, horizontal adjusting assembly and vertical adjusting assembly are upside down and are placed in the top of cavity, fixed frame is slidably connected with horizontal adjusting assembly, the top of fixed frame is rotatably connected with vertical adjusting assembly, magnetron is fixedly arranged at the bottom of fixed frame, towards target material and backplate, the device utilizes horizontal adjusting assembly and vertical adjusting assembly cooperation, adjust the position of fixed frame in horizontal aspect, to realize the adjustment of magnetron position, finally change the magnetic field distribution of magnetic field on target material, improve the problem of insufficient target material utilization rate caused by uneven sputtering target material magnetic field distribution.
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Description

Technical Field

[0001] This utility model relates to the field of thin film preparation, and in particular to a magnetic cavity sputtering device for improving target material utilization. Background Technology

[0002] In existing thin film fabrication processes, the magnetic field distribution of traditional magnetron sputtering targets is fixed, resulting in uneven plasma distribution, narrow target etching areas, and low utilization rates, typically below 40%, leading to the "runway effect." Frequent target replacements increase production costs and reduce production efficiency. Furthermore, in existing thin film fabrication processes, targets often face the risk of overheating during the process. Therefore, this application proposes a solution to address these issues. Summary of the Invention

[0003] Purpose of the utility model: The purpose of this utility model is to provide a magnetic cavity sputtering device that improves the utilization rate of sputtering targets, thereby addressing the problem of insufficient target utilization caused by uneven magnetic field distribution of sputtering targets.

[0004] Technical Solution: The present invention provides a magnetic cavity sputtering device for improving target utilization, comprising a cavity with a physical vapor deposition chamber, a target material disposed at the top of the cavity, a back plate disposed above the target material, the back plate being sealed to the cavity by a rubber sealing ring, a magnetically controlled motion device disposed at the top end face of the cavity, the magnetically controlled motion device comprising a magnetron, a fixing frame, a horizontal adjustment component, and a vertical adjustment component, the horizontal adjustment component and the vertical adjustment component being positioned vertically opposite each other at the top of the cavity, the fixing frame being slidably connected to the horizontal adjustment component, the top of the fixing frame being rotatably connected to the vertical adjustment component, and the magnetron being fixedly disposed at the bottom of the fixing frame, facing the back plate.

[0005] This application utilizes a horizontal adjustment component and a vertical adjustment component working together to adjust the position of the fixing frame in the horizontal direction, thereby adjusting the position of the magnetron and ultimately changing the magnetic field distribution on the target material, thus improving the problem of insufficient target utilization caused by uneven magnetic field distribution on the sputtering target material.

[0006] Preferably, the horizontal adjustment assembly includes a servo motor and a connecting rod. The servo motor is located at the top of the cavity, and the output end of the servo motor is connected to the connecting rod. A fixed frame is slidably connected to the connecting rod.

[0007] The servo motor drives the connecting rod to rotate on the horizontal plane, which in turn drives the fixed frame to rotate on the horizontal plane.

[0008] Preferably, the vertical adjustment assembly includes a second servo motor, a lead screw, and a second connecting rod. The second servo motor is located above the cavity, the lead screw is connected to the output end of the second servo motor, one end of the second connecting rod is rotatably connected to the top of the fixed frame, and the other end is rotatably connected to the lead screw.

[0009] Servo motor 2 drives the lead screw to rotate, which in turn drives connecting rod 2 to move up and down in the vertical direction. This causes connecting rod 2 to push or pull the fixed frame to slide along connecting rod 1. In conjunction with the rotating connecting rod 1, the position of the fixed frame on the horizontal plane can be adjusted.

[0010] Preferably, the fixing frame is a frame structure.

[0011] The frame structure makes the fixture more robust overall.

[0012] Preferably, the distance between the magnetron and the backplate is between 2 and 5 mm.

[0013] Maintaining a distance of 2-5mm between the magnetron and the backplate ensures the strength of the magnetic field.

[0014] Preferably, the length of the magnetron is matched with the diameter of the target material.

[0015] Matching the magnetron length to the target diameter ensures coverage of the sputtering area.

[0016] Preferably, the back plate has a hollow structure and is connected to an external circulating water system through an inlet and an outlet.

[0017] The inlet and outlet facilitate the flow of cooling water to and from the target material, preventing overheating during the process.

[0018] Preferably, the magnetic motion device is electrically connected to a PLC controller.

[0019] The PLC controller performs electrical control of the magnetic motion device.

[0020] Beneficial effects: Compared with the prior art, this utility model has the following advantages:

[0021] This application uses a combination of horizontal and vertical adjustment components to adjust the position of the mounting bracket in the horizontal direction, thereby adjusting the position of the magnetron and ultimately changing the magnetic field distribution on the target material, thus improving the problem of insufficient target utilization caused by uneven magnetic field distribution on the sputtering target material. Attached Figure Description

[0022] Figure 1 This is a front view of the present invention.

[0023] Figure 2 This is an enlarged view of the magnetically controlled motion device in this utility model.

[0024] Figure 3 This is an enlarged view of the horizontal adjustment component in this utility model.

[0025] Figure 4 This is an enlarged view of the vertical adjustment component in this utility model.

[0026] Figure 5 This is a schematic diagram of the etched area of ​​the target material.

[0027] Figure 6 This is a table showing the etching depth at various locations on a traditional magnetron sputtering target.

[0028] Figure 7 This is a table showing the etching depth at various locations on the magnetron sputtering target after using this device. Detailed Implementation

[0029] The technical solution of this utility model will be further described below with reference to the accompanying drawings.

[0030] See appendix Figures 1-4 Figure 1 shows a magnetic cavity sputtering device for improving target utilization, which includes a cavity 1 with a physical vapor deposition cavity. A target 2 is disposed on the top of the cavity 1, and a back plate 3 is disposed above the target 2. The back plate 3 is sealed to the cavity 1 by a rubber sealing ring 4. A magnetically controlled motion device is disposed on the top end face of the cavity 4. The magnetically controlled motion device includes a magnetron 5, a fixing frame 6, a horizontal adjustment component 7, and a vertical adjustment component 8. The horizontal adjustment component 7 and the vertical adjustment component 8 are arranged vertically opposite each other on the top of the cavity 1. The fixing frame 6 is slidably connected to the horizontal adjustment component 7, and the top of the fixing frame 6 is rotatably connected to the vertical adjustment component 8. The magnetron 5 is fixedly disposed at the bottom of the fixing frame 6, facing the back plate 3.

[0031] This device utilizes the cooperation of the horizontal adjustment component 7 and the vertical adjustment component 8 to adjust the position of the fixing frame 6 in the horizontal direction, thereby adjusting the position of the magnetron 6 and ultimately changing the magnetic field distribution on the target material 2, thus improving the problem of insufficient utilization of the target material 2 caused by the uneven magnetic field distribution of the sputtering target.

[0032] In this embodiment, the horizontal adjustment component 7 includes a servo motor 71 and a connecting rod 72. The servo motor 71 is located at the top of the cavity 1. The output end of the servo motor 71 is connected to the connecting rod 72. A fixed frame 6 is slidably connected to the connecting rod 72. The servo motor 71 drives the connecting rod 72 to rotate on the horizontal plane, thereby driving the fixed frame 6 to rotate on the horizontal plane.

[0033] In this embodiment, the vertical adjustment component 8 includes a second servo motor 81, a lead screw 82, and a second connecting rod 83. The second servo motor 81 is located above the cavity 1. The lead screw 82 is connected to the output end of the second servo motor 81. One end of the second connecting rod 83 is rotatably connected to the top of the fixed frame 6, and the other end is rotatably connected to the lead screw 82. The second servo motor 81 drives the lead screw 82 to rotate, thereby driving the second connecting rod 83 to move up and down in the vertical direction, so that the second connecting rod 83 pushes or pulls the fixed frame 6 to slide along the first connecting rod 72. With the cooperation of the rotating first connecting rod 72, the position of the fixed frame 6 on the horizontal plane is adjusted.

[0034] In this embodiment, the fixing frame 6 is a frame structure, which makes the whole structure more robust.

[0035] In this embodiment, the distance between the magnetron 5 and the back plate 3 is between 2-5 mm to ensure the strength of the magnetic field.

[0036] In this embodiment, the length of the magnetron 5 is matched with the diameter of the target 2 to ensure that the sputtering area can be covered.

[0037] In this embodiment, the back plate 3 has a hollow structure inside and is connected to an external circulating water system through an inlet 31 and an outlet 32, so as to cool the target material 2 using the circulating water system.

[0038] In this embodiment, the magnetically controlled motion device is electrically connected to a PLC controller, which performs electrical control of the magnetically controlled motion device.

[0039] See appendix Figure 5-6 The fixed magnetic field distribution of the traditional magnetron sputtering target 2 leads to uneven plasma distribution and a noticeable "runway effect" in the target 2. This can result in problems in practical applications. Figure 6 The etching depth of target 2 in area A is between -8 and -10 mm, and the etching depth of target 2 in area B is between -6 and -8 mm. Target 2 in areas A and B suffers more wear than in other areas and cannot be used, resulting in insufficient utilization of the entire target 2.

[0040] See appendix Figure 5 and attached Figure 7 By using this application to change the magnetic field distribution on the target 2, the following will occur: Figure 7 The etching depth of target 2 in region A is between -4 and -6 mm, and the etching depth of target 2 in region B is between -6 and -8 mm. The wear of target 2 in regions A and B is significantly improved compared with other regions, which can improve the utilization rate of target 2.

Claims

1. A magnetic cavity sputtering device for improving target utilization, comprising a cavity (1) having a physical vapor deposition chamber, a target (2) disposed on the top of the cavity (1), and a back plate (3) disposed above the target (2), the back plate (3) being sealed to the cavity (1) by a rubber sealing ring (4), characterized in that: The top end face of the cavity (1) is provided with a magnetically controlled motion device, which includes a magnetron (5), a fixed frame (6), a horizontal adjustment component (7) and a vertical adjustment component (8). The horizontal adjustment component (7) and the vertical adjustment component (8) are positioned opposite each other on the top of the cavity (1). The fixed frame (6) is slidably connected to the horizontal adjustment component (7), and the top of the fixed frame (6) is rotatably connected to the vertical adjustment component (8). The magnetron (5) is fixedly installed at the bottom of the fixed frame (6) facing the back plate (3).

2. The magnetic cavity sputtering device for improving target utilization according to claim 1, characterized in that: The horizontal adjustment assembly (7) includes a servo motor (71) and a connecting rod (72). The servo motor (71) is located at the top of the cavity (1). The output end of the servo motor (71) is connected to the connecting rod (72). A fixed frame (6) is slidably connected to the connecting rod (72).

3. The magnetic cavity sputtering device for improving target utilization according to claim 1, characterized in that: The vertical adjustment assembly (8) includes a second servo motor (81), a lead screw (82), and a second connecting rod (83). The second servo motor (81) is located above the cavity (1). The lead screw (82) is connected to the output end of the second servo motor (81). One end of the second connecting rod (83) is rotatably connected to the top of the fixed frame (6), and the other end is rotatably connected to the lead screw (82).

4. The magnetic cavity sputtering device for improving target utilization according to claim 1, characterized in that: The fixing frame (6) is a frame structure.

5. A magnetic cavity sputtering device for improving target utilization according to claim 1, characterized in that: The distance between the magnetron (5) and the back plate (3) is between 2 and 5 mm.

6. A magnetic cavity sputtering device for improving target utilization according to claim 1, characterized in that: The length of the magnetron (5) matches the diameter of the target (2).

7. A magnetic cavity sputtering device for improving target utilization according to claim 1, characterized in that: The back plate (3) has a hollow structure inside and is connected to the external circulating water system through the inlet (31) and outlet (32).

8. A magnetic cavity sputtering device for improving target utilization according to claim 1, characterized in that: The magnetically controlled motion device is electrically connected to a PLC controller.