Gas delivery structure and semiconductor processing apparatus

Abstract

The utility model provides a kind of gas conveying structure and a kind of semiconductor processing equipment.The gas conveying structure includes multiple gas distribution branch and at least one flow limiting piece.The one end of the multiple gas distribution branch is connected at least one gas source, and the other end is connected at least one process chamber respectively.The at least one flow limiting piece is connected in at least one the gas distribution branch.The flow limiting piece includes driving part and deformation part.The driving part drives the deformation part deformation, to change the size of the deformation part center aperture, to adjust the flow resistance in the gas distribution branch.The utility model can be by setting flow limiting piece on each gas distribution branch, and by flow limiting piece changes the flow resistance in each gas distribution branch, for adjusting the reaction gas flow in corresponding process chamber, to ensure the uniformity of the film layer thickness deposited by each process chamber.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor device processing, and in particular to a gas delivery structure and a semiconductor processing equipment. Background Technology

[0002] In the semiconductor manufacturing field, multi-cavity deposition or etching equipment (e.g., four-station, six-station, etc.) is widely used in key processes such as wafer surface film deposition due to its ability to achieve continuous and efficient production. The gas delivery system of this type of equipment typically distributes the reactant gas to each process cavity via a main gas distribution pipe to ensure that each cavity reacts according to the preset process. However, due to slight differences in cavity structure, the airflow into the cavity varies, leading to differences in the deposited film layers in each process cavity. This results in insufficient film uniformity within the same batch of products, severely impacting product yield and consistency. Existing gas flow regulation methods only adjust the reactant gas flow rate in the corresponding cavity by installing and removing the corresponding gas branch. However, the installation and removal process requires production interruption, is complex and time-consuming, severely impacting equipment utilization; furthermore, regulation relies on manual operation and multiple trial and error, failing to achieve real-time dynamic adjustment, exhibiting high latency, and struggling to quickly respond to flow fluctuations caused by subtle differences in process cavities.

[0003] In order to overcome the above-mentioned defects in the prior art, there is an urgent need in the field for an improved gas delivery structure to adjust the flow rate of the reaction gas in the corresponding process chamber, so as to ensure the uniformity of the film thickness deposited in each process chamber. Utility Model Content

[0004] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0005] To overcome the aforementioned defects in the existing technology, this utility model provides a gas delivery structure and a semiconductor processing equipment. By setting flow restrictors on each gas branch and changing the flow resistance in each gas branch through the flow restrictors, the flow rate of the reaction gas in the corresponding process chamber can be adjusted to ensure the uniformity of the film thickness deposited in each process chamber.

[0006] Specifically, the gas delivery structure provided according to the first aspect of this utility model includes multiple gas distribution branches and at least one flow restrictor. One end of each of the multiple gas distribution branches is connected to at least one gas source, and the other end is respectively connected to at least one process chamber. The at least one flow restrictor is connected in series with at least one of the gas distribution branches. The flow restrictor includes a driving part and a deformation part. The driving part drives the deformation part to deform, thereby changing the size of the central aperture of the deformation part, and thus adjusting the flow resistance within the gas distribution branches.

[0007] Furthermore, in some embodiments of this utility model, the driving part includes a nut. The deformable part includes a gas-cutting spring. The nut drives the gas-cutting spring to deform by changing the distance between itself and the fixed end of the gas distribution branch, thereby changing the size of the central aperture of the gas-cutting spring and adjusting the flow resistance in the gas distribution branch.

[0008] Furthermore, in some embodiments of this utility model, the distance between the nut and the fixed end of the gas distribution branch is reduced. The deformation of the gas-cutting spring is increased, reducing its central aperture, thereby increasing the flow resistance in the corresponding gas distribution branch. Alternatively, the distance between the nut and the fixed section of the gas distribution branch is increased. The deformation of the gas-cutting spring is reduced, increasing its central aperture, thereby reducing the flow resistance in the corresponding gas distribution branch.

[0009] Furthermore, in some embodiments of this utility model, the nut is electrically or pneumatically controlled.

[0010] Furthermore, in some embodiments of this utility model, the driving unit includes a temperature regulating mechanism, and the deformation unit includes a gas-blocking ring. The temperature regulating mechanism drives the gas-blocking ring to deform by changing the temperature of the gas-blocking ring, thereby changing the size of the central aperture of the gas-blocking ring and adjusting the flow resistance in the corresponding gas distribution branch.

[0011] Furthermore, in some embodiments of this utility model, the temperature regulating mechanism controls the cooling of the gas-blocking ring, reducing its central aperture, thereby increasing the flow resistance in the corresponding gas-distribution branch. Alternatively, the temperature regulating mechanism controls the heating of the gas-blocking ring, increasing its central aperture, thereby reducing the flow resistance in the corresponding gas-distribution branch.

[0012] Furthermore, the semiconductor processing equipment provided according to the second aspect of this utility model includes multiple process chambers, a gas delivery structure as provided in the first aspect of this utility model, a film thickness detection unit, and a controller. The gas delivery structure is connected to at least one external gas source for delivering reactive gases to each of the process chambers. The film thickness detection unit is disposed within each of the process chambers for detecting the film thickness on the semiconductor substrate within each process chamber. The controller is connected to a flow limiter of the gas delivery structure and the film thickness detection unit, and is configured to: detect the film thickness formed on the semiconductor substrate in each process chamber; and adjust the flow limiter of the gas delivery structure according to the relationship between the film thickness and the flow resistance in the corresponding gas branch, thereby adjusting the flow resistance in the corresponding gas branch. Attached Figure Description

[0013] The above-described features and advantages of this invention can be better understood after reading the following detailed description of the embodiments of this disclosure in conjunction with the accompanying drawings. In the drawings, the components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0014] Figure 1 A schematic diagram of the structure of a semiconductor processing apparatus provided according to some embodiments of the present invention is shown.

[0015] Figure 2 A schematic diagram of a gas delivery structure according to some embodiments of the present invention is shown.

[0016] Figure 3 A schematic diagram of a gas delivery structure according to some embodiments of the present invention is shown.

[0017] Figure 4 A schematic flowchart of a semiconductor processing method according to some embodiments of the present invention is shown.

[0018] Figure label:

[0019] 11 gas branch lines

[0020] 12 Current limiting components

[0021] 21 Nuts

[0022] 22 gas-stopping shrapnel

[0023] 31 Temperature control mechanism

[0024] 32 Gas-cutting ring

[0025] 20 Process Chambers

[0026] 30 Gas Source Detailed Implementation

[0027] The following specific embodiments illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. Although the description of this utility model will be presented in conjunction with preferred embodiments, this does not mean that the features of this utility model are limited to this embodiment. On the contrary, the purpose of describing the utility model in conjunction with the embodiments is to cover other options or modifications that may be derived based on the claims of this utility model. To provide a deep understanding of this utility model, many specific details will be included in the following description. This utility model may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of this utility model, some specific details will be omitted in the description.

[0028] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0029] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described device must be manufactured or operated in a specific orientation; therefore, they should not be construed as limiting the scope of this invention.

[0030] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first component, region, layer, and / or part discussed below may be referred to as the second component, region, layer, and / or part without departing from some embodiments of this utility model.

[0031] As mentioned above, in the semiconductor manufacturing field, multi-cavity deposition or etching equipment (e.g., four-station, six-station, etc.) is widely used in key processes such as wafer surface film deposition due to its ability to achieve continuous and efficient production. The gas delivery system of this type of equipment typically distributes the reaction gas to each process cavity via a main gas distribution pipe to ensure that each cavity reacts according to the preset process. However, due to slight differences in cavity structure, the airflow into the cavity varies, leading to differences in the deposited film layers in each process cavity. This results in insufficient film uniformity within the same batch of products, severely impacting product yield and consistency. Existing gas flow regulation methods only adjust the reaction gas flow rate in the corresponding cavity by installing and removing the corresponding gas branch. However, the installation and removal process requires production interruption, is complex and time-consuming, severely impacting equipment utilization; furthermore, regulation relies on manual operation and multiple trial and error, failing to achieve real-time dynamic adjustment, exhibiting high latency, and making it difficult to quickly respond to flow fluctuations caused by subtle differences in the process cavities.

[0032] To overcome the aforementioned defects in the existing technology, this utility model provides a gas delivery structure and a semiconductor processing equipment. By setting flow restrictors on each gas branch and changing the flow resistance in each gas branch through the flow restrictors, the flow rate of the reaction gas in the corresponding process chamber can be adjusted to ensure the uniformity of the film thickness deposited in each process chamber.

[0033] In some non-limiting embodiments, the gas delivery structure provided in the first aspect of the present invention can be implemented in the semiconductor processing equipment provided in the second aspect of the present invention.

[0034] Please refer to the details. Figure 1 . Figure 1 A schematic diagram of the structure of a semiconductor processing apparatus provided according to some embodiments of the present invention is shown.

[0035] exist Figure 1 In the illustrated embodiment, the semiconductor processing equipment provided by the second aspect of this invention includes a plurality of process chambers 20, a gas delivery structure provided by the first aspect of this invention, and a film thickness detection unit. Here, the gas delivery structure is connected to at least one external gas source 30 for supplying reactive gases to each process chamber 20. The film thickness detection unit is disposed within each process chamber 20 for detecting the film thickness on the semiconductor substrate within each process chamber 20.

[0036] Please refer to further information. Figure 2 . Figure 2 A schematic diagram of a gas delivery structure according to some embodiments of the present invention is shown.

[0037] exist Figure 2In the illustrated embodiment, the gas delivery structure provided by the first aspect of this invention includes a plurality of branch gas paths 11. One end of each of the plurality of branch gas paths 11 is connected to at least one gas source 30, and the other end is connected to at least one process chamber 20. The at least one flow restrictor 12 is connected in series with at least one branch gas path 11. Here, the flow restrictor includes a driving part and a deformation part. The driving part drives the deformation part to deform, thereby changing the size of the central aperture of the deformation part, and thus adjusting the flow resistance within the branch gas path.

[0038] Furthermore, in Figure 2 In the illustrated embodiment, the driving part includes a nut 21, and the deformation part includes a gas-blocking spring 22. Here, the nut 21 drives the gas-blocking spring 22 to deform by changing the distance L between itself and the fixed end of the gas distribution branch 11, thereby changing the size of the central aperture of the gas-blocking spring 22 and adjusting the flow resistance within the gas distribution branch 11.

[0039] Specifically, in Figure 2 In the embodiment shown, the distance L between the nut 21 and the fixed end of the gas distribution branch 11 is reduced, the deformation of the gas-cutting spring 22 is increased, and its central aperture is reduced, thereby increasing the flow resistance in the corresponding gas distribution branch 11.

[0040] Alternatively, the distance L between the nut 21 and the fixed section of the gas distribution branch 11 increases, the deformation of the gas-cutting spring 22 decreases, and its central aperture increases, thereby reducing the flow resistance in the corresponding gas distribution branch 11.

[0041] Here, the aforementioned nut 21 is connected to the fixed end of the gas distribution branch 11 via a thread. The nut 21 can be electrically or pneumatically controlled. The aforementioned gas shut-off spring 22 is manufactured using a bellows forming process.

[0042] Please refer to Figure 3 . Figure 3 A schematic diagram of a gas delivery structure according to some embodiments of the present invention is shown.

[0043] exist Figure 3 In the illustrated embodiment, the driving unit includes a temperature regulating mechanism 31, and the deformation unit includes a cut-off ring 32. Here, the temperature regulating mechanism 31 drives the cut-off ring 32 to deform by changing the temperature of the cut-off ring 32, thereby changing the size of the central aperture of the cut-off ring 32 and adjusting the flow resistance in the corresponding gas distribution branch 11.

[0044] Specifically, in Figure 3 In the embodiment shown, the temperature regulating mechanism 31 controls the air-blocking ring 32 to cool down, thereby reducing its central aperture and increasing the flow resistance in the corresponding air-blocking branch 11.

[0045] Alternatively, the temperature regulating mechanism 31 controls the temperature of the cut-off ring 32 to increase its central aperture, thereby reducing the flow resistance in the corresponding gas distribution branch 11.

[0046] Here, the material of the aforementioned gas-stopping ring 32 is a shape memory titanium alloy. In shape memory titanium alloys, the presence of thermoelastic martensitic phase transformation gives the alloy a unique deformation recovery capability. When deformed under stress, the titanium alloy can completely recover its original shape before deformation when heated above the initiation temperature of the parent phase reversal. This process remains stable in subsequent thermal cycles, demonstrating the excellent performance of shape memory titanium alloys. Furthermore, since heating of the pipeline affects the deformation of the shape memory titanium alloy, this type of gas-stopping ring is only suitable for pipelines without heating requirements.

[0047] Furthermore, in some non-limiting embodiments, the semiconductor processing apparatus provided in the second aspect of this invention includes a memory and a controller. Here, computer instructions are stored on the memory. The controller is connected to the memory and configured to execute the computer instructions stored on the memory to implement the semiconductor processing method provided in some embodiments of this invention.

[0048] The working principle of the above-described semiconductor processing equipment will be described below with reference to some embodiments of semiconductor processing methods. Those skilled in the art will understand that these embodiments of processing methods are merely non-limiting implementations provided by this invention, intended to clearly demonstrate the main concept of this invention and provide specific solutions convenient for public implementation, rather than limiting all functions or operating methods of the semiconductor processing equipment. Similarly, this semiconductor processing equipment is also only one non-limiting implementation provided by this invention, and does not constitute a limitation on the executing entity and execution order of each step in these semiconductor processing methods.

[0049] Please refer to Figure 4 . Figure 4 A schematic flowchart of a semiconductor processing method according to some embodiments of the present invention is shown.

[0050] like Figure 4 As shown, a technician can first detect the thickness of the film formed on the semiconductor substrate in each process chamber 20 by means of the film thickness detection unit of the semiconductor processing equipment provided in the second aspect of this utility model.

[0051] Subsequently, the controller of the semiconductor processing equipment can adjust the flow limiting element 12 of the gas delivery structure according to the relationship between the film thickness and the flow resistance in the gas distribution branch 11, thereby adjusting the flow resistance in the corresponding gas distribution branch 11.

[0052] Specifically, in response to the film thickness formed on the semiconductor substrate in the process chamber 20 being less than a preset thickness value, the flow resistance in the corresponding gas distribution branch 11 is reduced, thereby increasing the flow rate of the reaction gas in the corresponding gas distribution branch 11.

[0053] Alternatively, in response to the film thickness formed on the semiconductor substrate in the process chamber 20 being greater than a preset thickness value, the flow resistance in the corresponding gas distribution branch 11 is increased, thereby reducing the flow rate of the reaction gas in the corresponding gas distribution branch 11.

[0054] In summary, the gas delivery structure and semiconductor processing equipment provided by this utility model can adjust the flow rate of the reaction gas in the corresponding process chamber by setting flow restrictors on each gas branch and changing the flow resistance in each gas branch through the flow restrictors, so as to ensure the uniformity of the film thickness deposited in each process chamber.

[0055] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0056] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of both. The software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor such that the processor can read and write information to / from the storage medium. In an alternative, the storage medium may be integrated into the processor. The processor and storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and storage medium may reside as discrete components in the user terminal.

[0057] In one or more exemplary embodiments, the described functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functionality may be stored or transmitted as one or more instructions or code on or through a computer-readable medium. A computer-readable medium includes both computer storage media and communication media, encompassing any medium that facilitates the transfer of a computer program from one location to another. A storage medium may be any available medium accessible to a computer. By way of example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disc storage, disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and is accessible to a computer. Any connection is also legitimately referred to as a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of a medium. As used in this article, disk and disc include compact discs (CDs), laser discs, optical discs, digital multi-purpose discs (DVDs), floppy disks, and Blu-ray discs. Disks typically reproduce data magnetically, while discs reproduce data optically using lasers. Combinations of these should also be included within the scope of computer-readable media.

[0058] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas delivery structure, characterized by, include: Multiple gas distribution branches, one end of which is connected to at least one gas source, and the other end of which is connected to at least one process chamber respectively; as well as At least one flow restrictor is connected in series to at least one of the gas distribution branches, wherein the flow restrictor includes a driving part and a deformation part, the driving part drives the deformation part to deform, thereby changing the size of the central aperture of the deformation part, thereby adjusting the flow resistance in the gas distribution branch.

2. The gas delivery arrangement of claim 1, wherein, The driving part includes a nut, and the deformation part includes a gas-cutting spring. The nut drives the gas-cutting spring to deform by changing the distance between itself and the fixed end of the gas distribution branch, thereby changing the size of the central aperture of the gas-cutting spring and adjusting the flow resistance in the gas distribution branch.

3. The gas delivery arrangement of claim 2, wherein, The distance between the nut and the fixed end of the gas distribution branch decreases, the deformation of the gas-cutting spring increases, and its central aperture decreases, thereby increasing the flow resistance in the corresponding gas distribution branch, or The increased distance between the nut and the fixed section of the gas distribution branch reduces the deformation of the gas-cutting spring, thereby increasing its central aperture and reducing the flow resistance in the corresponding gas distribution branch.

4. The gas delivery arrangement of claim 2, wherein, The nut is controlled by electric or pneumatic power.

5. The gas delivery arrangement of claim 1, wherein, The driving unit includes a temperature regulating mechanism, and the deformation unit includes a gas-blocking ring. The temperature regulating mechanism drives the gas-blocking ring to deform by changing the temperature of the gas-blocking ring, thereby changing the size of the central aperture of the gas-blocking ring and adjusting the flow resistance in the corresponding gas branch.

6. The gas delivery arrangement of claim 5, wherein, The temperature regulating mechanism controls the cooling of the gas-cutting ring, reducing its central aperture, thereby increasing the flow resistance in the corresponding gas distribution branch, or The temperature regulating mechanism controls the temperature of the gas-blocking ring to increase its central aperture, thereby reducing the flow resistance in the corresponding gas distribution branch.

7. A semiconductor processing apparatus, characterized by comprising: include: Multiple process chambers; The gas delivery structure as described in any one of claims 1 to 6 is connected to at least one external gas source for delivering reaction gases to each of the process chambers; and A film thickness detection unit is disposed in each of the process chambers and is used to detect the film thickness on the semiconductor substrate in each of the process chambers.

Images