Wafer laser thickness measuring device

Abstract

The utility model discloses a kind of wafer laser thickness measuring device, it is related to wafer thickness measurement technical field.The utility model includes detection platform and tray, tray is slidably arranged in sliding slot, sliding slot is opened in the table top of detection platform, the upper side of tray is mirror surface, bracket is fixedly arranged on the upper end surface of detection platform, laser transmitter is arranged on bracket, vertical pipe is arranged on the side of the upper end surface of detection platform, laser receiver is arranged on the side of vertical pipe.The utility model places wafer die on tray, laser transmitter first emits laser to mirror surface and is reflected to receiver, records its height;Again tray is moved to make laser irradiation wafer surface, adjust receiver height to receive reflected laser again, according to the difference of the angle and receiver height of both, the difference of wafer and mirror surface is calculated, that is, wafer thickness is obtained, non-contact high-precision measurement is realized.

Description

Technical Field

[0001] This utility model belongs to the field of wafer thickness measurement technology, and in particular relates to a wafer laser thickness measurement device. Background Technology

[0002] In the semiconductor manufacturing industry, accurate wafer thickness measurement is a critical step in ensuring the yield of subsequent processes. Traditional contact thickness measurement methods carry the risk of wafer bending or surface damage due to measurement pressure, affecting measurement accuracy and product safety. While non-contact optical measurement avoids physical contact, it is often affected by wafer surface warping, jitter, or placement tilt, causing reflected light path deviation and introducing significant errors. Existing equipment often lacks efficient automated positioning and real-time optical path compensation mechanisms, relying heavily on manual adjustments, which is inefficient and inconsistent. Furthermore, a single measurement point cannot reflect the thickness uniformity of the entire wafer, while multi-point measurements require complex motion mechanisms, increasing equipment cost and maintenance difficulty. Achieving high-precision, high-efficiency, and non-destructive automated thickness detection remains a major challenge.

[0003] To address these issues, we provide a wafer laser thickness measurement device. Utility Model Content

[0004] The purpose of this invention is to provide a wafer laser thickness measurement device. The device involves placing a bare wafer on a tray, which is then slidably positioned within a groove on a testing platform. A laser receiver is positioned on one side of the testing platform. A laser emitter emits a laser beam towards the upper mirror surface of the tray. The laser beam is reflected by the mirror surface on the upper side of the tray and onto the laser receiver. The height of the laser receiver is recorded. The laser emitter is then moved so that the laser beam illuminates the bare wafer. The height of the laser receiver is adjusted so that the bare wafer reflects the laser beam back onto the laser receiver. Based on the angle between the laser emitter and the laser receiver, and the height of the laser receiver, the difference in elevation between the upper surface of the bare wafer and the upper side of the tray, i.e., the thickness of the bare wafer, is calculated.

[0005] To solve the above-mentioned technical problems, this utility model is achieved through the following technical solution:

[0006] This utility model is a wafer laser thickness measurement device, including a detection stage and a tray. The tray is slidably disposed in a slide groove. The slide groove is formed on the surface of the detection stage. The upper side of the tray is a mirror surface. A bracket is fixed on the upper surface of the detection stage. A laser emitter is disposed on the bracket. A vertical tube is disposed on one side of the upper surface of the detection stage. A laser receiver is disposed on one side of the vertical tube. The emitting end of the lower end of the laser emitter is inclined towards the laser receiver, and the receiving end of the lower end of the laser receiver is inclined towards the laser emitter.

[0007] A further feature of this invention is that a placement platform is fixedly provided on the upper surface of the tray, and a semi-circular wafer placement groove is provided on one side of the placement platform.

[0008] A further feature of this invention is that roller seats are fixedly provided on both sides of the lower end face of the tray, and a set of rotating rollers are rotatably installed inside the roller seats, with the lower end roller surface of the rotating rollers adhering to the upper end face of the chute.

[0009] A further feature of this invention is that the tray has a support hole extending through the surface of the wafer placement slot.

[0010] A further feature of this invention is that a vertical groove is provided through the side of the vertical tube near the laser emitter, and a vertical sliding arm is fixedly provided on the side of the laser receiver away from the laser emitter. A threaded sleeve is fixedly provided at the end of the vertical sliding arm away from the laser receiver. The threaded sleeve is vertically slidably sleeved inside the vertical tube, and the vertical sliding arm is vertically slidably sleeved inside the vertical groove.

[0011] A further feature of this invention is that a vertical lead screw is rotatably sleeved inside the vertical tube, the vertical lead screw is threadedly engaged in the threaded sleeve, a servo motor is provided at the upper end of the vertical tube, and the upper end of the vertical lead screw is fixedly connected to the output end of the servo motor at the upper end of the vertical tube.

[0012] A further feature of this invention is that a threaded lug is fixedly provided on the lower end face of the tray, a through groove is provided through the bottom of the slide of the testing table, adapter lugs are fixedly provided on both sides of the lower end face of the testing table, a transverse screw is rotatably installed between the two adapter lugs, the threaded lug passes through the through groove, the transverse screw is threaded through the threaded lug, a servo motor is provided on one side of one adapter lug, and one end of the transverse screw is fixedly connected to the output end of the servo motor on one side of the adapter lug.

[0013] This utility model has the following beneficial effects:

[0014] 1. This utility model involves placing a bare wafer on a tray, sliding the tray within a groove on a testing table, and placing a laser receiver on one side of the testing table. A laser emitter emits a laser beam towards the upper mirror surface of the tray. The laser beam is reflected by the mirror surface on the upper side of the tray to the laser receiver. The height of the laser receiver is recorded. The laser emitter is then moved so that the laser beam irradiates the bare wafer. The height of the laser receiver is adjusted so that the bare wafer reflects the laser beam back to the laser receiver. Based on the angle between the laser emitter and the laser receiver, and the height of the laser receiver, the height difference between the upper surface of the bare wafer and the upper side of the tray, i.e., the thickness of the bare wafer, is calculated.

[0015] 2. This utility model adjusts the angle between the laser emitter and the laser receiver to adjust the reflection angle of the laser beam emitted by the laser emitter after it shines on the wafer, thereby adjusting the height that the laser receiver needs to move to receive the laser beam, and thus adjusting the accuracy of the wafer measurement. Attached Figure Description

[0016] To more clearly illustrate the technical solutions of the embodiments of this utility model, the accompanying drawings used in the description of the embodiments will be briefly introduced below.

[0017] Figure 1 This is a schematic diagram of a wafer laser thickness measurement device.

[0018] Figure 2 This is a schematic diagram of the tray structure.

[0019] Figure 3 This is a side view of the present invention.

[0020] Figure 4 This is an exploded view of the laser receiver and the vertical tube.

[0021] Figure 5 This is a top view of the present invention.

[0022] The attached diagram lists the components represented by each number as follows:

[0023] 1-Inspection stage, 101-Slide groove, 102-Bracket, 102a-Laser emitter, 103-Vertical tube, 103a-Laser receiver, 103a-1-Vertical sliding arm, 103a-2-Threaded sleeve, 103b-Vertical groove, 103c-Vertical lead screw, 104-Adapter ear, 104a-Horizontal lead screw, 2-Tray, 201-Placement stage, 201a-Wafer placement slot, 201a-1-Lifting hole, 202-Roller seat, 202a-Rotating roller, 203-Threaded ear. Detailed Implementation

[0024] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention.

[0025] Example 1

[0026] Please see Figures 1 to 3This utility model is a wafer laser thickness measurement device, including a detection stage 1 and a tray 2. By placing the wafer on the tray 2, the tray 2 is slidably positioned in the groove 101 of the detection stage 1. A laser receiver 103a is set on one side of the detection stage 1. A laser emitter 102a emits a laser beam towards the upper mirror surface of the tray 2. The laser beam is reflected by the mirror surface on the upper side of the tray 2 and onto the laser receiver 103a. The height of the laser receiver 103a is recorded. Then, the laser emitter 102a is moved so that the laser beam irradiates the wafer. The height of the laser receiver 103a is adjusted so that the wafer reflects the laser beam onto the laser receiver 103a. Based on the angle between the laser emitter 102a and the laser receiver 103a, and the height of the laser receiver 103a, the drop between the upper surface of the wafer and the upper side of the tray 2, i.e., the thickness of the wafer, is calculated.

[0027] Specifically, a slide groove 101 is provided on the surface of the testing table 1, and a tray 2 is slidably disposed in the slide groove 101. The upper side of the tray 2 is a mirror surface. A bracket 102 is fixedly provided on the upper surface of the testing table 1, and a laser emitter 102a is provided on the bracket 102. A vertical tube 103 is provided on one side of the upper surface of the testing table 1, and a laser receiver 103a is provided on one side of the vertical tube 103. The emitting end of the lower end of the laser emitter 102a is tilted towards the laser receiver 103a, and the receiving end of the lower end of the laser receiver 103a is tilted towards the laser emitter 102a.

[0028] Furthermore, a placement platform 201 is fixedly provided on the upper end of the tray surface of the tray 2, and a semi-circular wafer placement groove 201a is provided on one side of the placement platform 201 for placing bare wafers.

[0029] Furthermore, roller seats 202 are fixed on both sides of the lower end face of the tray 2, and a set of rotating rollers 202a are rotatably installed inside the roller seats 202. The lower end roller surface of the rotating rollers 202a is in contact with the upper end face of the slide groove 101 to reduce the friction between the tray 2 and the bottom of the slide groove 101 when the tray 2 moves.

[0030] Furthermore, the tray 2 has a support hole 201a-1 through the plate surface inside the wafer placement slot 201a.

[0031] The operation process of this embodiment is as follows: Place the bare wafer on the tray 2 and fit it in the wafer placement slot 201a. Slide the tray 2 to the bottom of the support 102. The laser emitter 102a emits a laser beam towards the upper mirror surface of the tray 2. The laser beam is reflected by the mirror surface on the upper side of the tray 2 to the laser receiver 103a. Record the height of the laser receiver 103a. Then move the laser emitter 102a so that the laser beam irradiates the bare wafer. Adjust the height of the laser receiver 103a so that the bare wafer reflects the laser beam to the laser receiver 103a. Based on the angle between the laser emitter 102a and the laser receiver 103a, and the height of the laser receiver 103a, calculate the height difference between the upper surface of the bare wafer and the upper side of the tray 2, i.e., the thickness of the bare wafer.

[0032] Example 2

[0033] Please see Figures 1 to 5 Based on Embodiment 1, a threaded sleeve 103a-2 is provided on one side of the laser receiver 103a, and a vertical lead screw 103c is rotatably provided inside the vertical tube 103. The vertical lead screw 103c is threaded and sleeved in the threaded sleeve 103a-2. The vertical lead screw 103c is driven to rotate by a servo motor, thereby precisely adjusting the height of the laser receiver 103a and recording the height change of the laser receiver 103a for calculating the thickness of the wafer.

[0034] Specifically, a vertical groove 103b is provided through the side of the vertical tube 103 near the laser emitter 102a. A vertical sliding arm 103a-1 is fixedly provided on the side of the laser receiver 103a away from the laser emitter 102a. A threaded sleeve 103a-2 is fixedly provided at the end of the vertical sliding arm 103a-1 away from the laser receiver 103a. The threaded sleeve 103a-2 is vertically slidably fitted inside the vertical tube 103, and the vertical sliding arm 103a-1 is vertically slidably fitted inside the vertical groove 103b.

[0035] Furthermore, a vertical lead screw 103c is rotatably sleeved inside the vertical tube 103. The vertical lead screw 103c is threadedly engaged inside the threaded sleeve 103a-2. A servo motor is provided at the upper end of the vertical tube 103. The upper end of the vertical lead screw 103c is fixedly connected to the output end of the servo motor at the upper end of the vertical tube 103.

[0036] Furthermore, a threaded lug 203 is fixedly provided on the lower end face of the tray 2, and a through groove is provided through the bottom of the slide of the testing table 1. Adapter lugs 104 are fixedly provided on both sides of the lower end face of the testing table 1. A transverse screw 104a is rotatably installed between the two adapter lugs 104. The threaded lug 203 passes through the through groove, and the transverse screw 104a is threaded through the threaded lug 203. A servo motor is provided on one side of one adapter lug 104. One end of the transverse screw 104a is fixedly connected to the output end of the servo motor on one side of the adapter lug 104. The servo motor drives the transverse screw 104a to rotate, so that the tray 2 moves horizontally.

[0037] The operation process of this embodiment is as follows: The servo motor on one side of the adapter ear 104 drives the tray 2 to move horizontally, so that the wafer on the tray 2 is below the laser emitter 102a. The laser beam is reflected by the mirror on the upper side of the tray 2 to the laser receiver 103a. The height of the laser receiver 103a is recorded. Then the laser emitter 102a is moved so that the laser beam irradiates the wafer. The servo motor drives the vertical lead screw 103c to rotate, thereby precisely adjusting the height of the laser receiver 103a so that the laser beam reflected by the wafer irradiates the laser receiver 103a. The height change of the laser receiver 103a is recorded and used to calculate the thickness of the wafer.

[0038] In the description of this specification, references to terms such as "an embodiment," "example," "specific example," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

Claims

1. A wafer laser thickness measurement device, comprising a measuring stage (1) and a tray (2), characterized in that: The testing platform (1) has a sliding groove (101) on its surface. The tray (2) is slidably disposed in the sliding groove (101). The upper side of the tray (2) is a mirror. The upper end of the testing platform (1) is fixed with a bracket (102). A laser emitter (102a) is disposed on the bracket (102). A vertical tube (103) is disposed on one side of the upper end of the testing platform (1). A laser receiver (103a) is disposed on one side of the vertical tube (103). The emitting end of the laser emitter (102a) is inclined toward the laser receiver (103a), and the receiving end of the laser receiver (103a) is inclined toward the laser emitter (102a).

2. The wafer laser thickness measurement device according to claim 1, characterized in that: The tray (2) has a placement platform (201) fixed at the upper end of its surface, and a semi-circular wafer placement groove (201a) is formed on one side of the placement platform (201).

3. The wafer laser thickness measurement device according to claim 2, characterized in that: Roller seats (202) are fixed on both sides of the lower end face of the tray (2). A set of rotating rollers (202a) are rotatably installed in the roller seats (202). The lower end roller surface of the rotating rollers (202a) is attached to the upper end face of the chute (101).

4. The wafer laser thickness measurement device according to claim 3, characterized in that: The tray (2) has a support hole (201a-1) through it on the surface of the wafer placement slot (201a).

5. The wafer laser thickness measurement device according to claim 1, characterized in that: A vertical groove (103b) is provided through the side of the vertical tube (103) near the laser emitter (102a). A vertical sliding arm (103a-1) is fixedly provided on the side of the laser receiver (103a) away from the laser emitter (102a). A threaded sleeve (103a-2) is fixedly provided at the end of the vertical sliding arm (103a-1) away from the laser receiver (103a). The threaded sleeve (103a-2) is vertically slidably sleeved in the vertical tube (103), and the vertical sliding arm (103a-1) is vertically slidably sleeved in the vertical groove (103b).

6. The wafer laser thickness measurement device according to claim 5, characterized in that: A vertical lead screw (103c) is rotatably sleeved inside the vertical tube (103). The vertical lead screw (103c) is threadedly sleeved inside the threaded sleeve (103a-2). A servo motor is provided at the upper end of the vertical tube (103). The upper end of the vertical lead screw (103c) is fixedly connected to the output end of the servo motor at the upper end of the vertical tube (103).

7. A wafer laser thickness measurement device according to claim 6, characterized in that: The lower end face of the tray (2) is fixedly provided with a threaded lug (203). The bottom of the slide of the testing table (1) is provided with a through groove. The two sides of the lower end face of the testing table (1) are respectively fixedly provided with adapter lugs (104). A transverse screw (104a) is rotatably installed between the two adapter lugs (104). The threaded lug (203) passes through the through groove. The transverse screw (104a) is threaded through the threaded lug (203). A servo motor is provided on one side of one adapter lug (104). One end of the transverse screw (104a) is fixedly connected to the output end of the servo motor on one side of the adapter lug (104).

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