Amorphous ito conductive film, display window, and display device

Abstract

The utility model discloses a non-crystalline ITO conductive film, window body and equipment, wherein the conductive film includes the substrate layer and is located the first bottom coating and the second bottom coating of substrate layer two sides, is equipped with optical matching layer, silicon plating film layer, non-crystalline ITO plating film layer and silicon dioxide plating film layer in second bottom coating sequence layer, and the refractive index of optical matching layer is 1.60-1.68, and silicon plating film layer thickness 0.5-0.8nm. The utility model realizes the synergic promotion of optical performance and weather resistance through the refractive index, thickness and material collocation of optimization each film layer.

Description

Technical Field

[0001] This utility model belongs to the field of optical technology, specifically relating to an amorphous ITO conductive film, a window, and a device. Background Technology

[0002] ITO (Indium Tin Oxide) conductive films are core functional materials in the field of dimming films. Based on their microstructure, they can be divided into crystalline ITO conductive films and amorphous ITO conductive films. While crystalline ITO conductive films possess certain optical and conductive properties, their production requires an additional aging process, resulting in higher production costs and limited production efficiency. Amorphous ITO conductive films, on the other hand, eliminate the aging process, effectively reducing production costs and improving production efficiency, making them the preferred choice in the industry.

[0003] However, existing amorphous ITO conductive films have significant technical drawbacks: on the one hand, their light transmittance is relatively low, failing to meet the high transmittance requirements of high-end dimming films; on the other hand, their weather resistance is poor, easily leading to performance degradation and structural damage in complex environments, thus limiting their application scenarios. The core reason for these drawbacks lies in the unreasonable film structure design, lacking targeted optical optimization layers and effective protective structures, making it difficult to achieve a balance between optical performance and weather resistance.

[0004] Therefore, in order to address the above-mentioned technical problems, it is necessary to provide a non-crystalline ITO conductive film, a window, and a device.

[0005] The information disclosed in this background section is intended only to enhance the understanding of the overall background of this utility model and should not be construed as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Utility Model Content

[0006] The purpose of this invention is to provide a non-crystalline ITO conductive film, a window, and a device.

[0007] To achieve the above objectives, the technical solution provided by a specific embodiment of this utility model is as follows:

[0008] The amorphous ITO conductive film includes a substrate layer and a first base layer and a second base layer disposed on both sides of the substrate layer. An optical matching layer, a silicon coating layer, an amorphous ITO coating layer and a silicon dioxide coating layer are sequentially stacked on the second base layer. The refractive index of the optical matching layer is 1.60-1.68 and the thickness of the silicon coating layer is 0.5-0.8 nm.

[0009] Conventional bonding layers use materials such as silicon dioxide, with a thickness of about 1-2 micrometers. In contrast, this solution uses a silicon-coated layer with a thickness of only about half that of existing technologies as the bonding layer. It is combined with an amorphous ITO coating layer as the conductive layer and an optical matching layer, which effectively improves the light transmittance and weather resistance of the conductive film, effectively overcomes the rainbow pattern defect, enhances the aesthetics of the product, and helps protect the eyesight of users of mobile phones and other terminals.

[0010] A silicon coating layer with a thickness controlled at 0.5-0.8 nm (refractive index 3.3) serves as a bonding layer, which can significantly enhance the adhesion between the optical matching layer and the amorphous ITO coating layer, avoiding interlayer delamination caused by material differences. Compared with the 1.0-1.6 nm silicon layer in the prior art, the thickness of this solution is halved. While ensuring adhesion, it reduces the absorption / reflection of light by high refractive index materials, thus balancing adhesion and light transmittance.

[0011] In one or more embodiments of the present invention, the refractive index of the second base coating is 1.60-1.65, the thickness of the second base coating is 40nm-60nm, and the thickness of the optical matching layer is 0.5μm-1μm.

[0012] In one or more embodiments of this utility model, an optical transition layer is further provided between the second base coating layer and the optical matching layer;

[0013] The refractive index of the second base coating is 1.52-1.55, and the thickness of the second base coating is 40nm-60nm;

[0014] The refractive index of the optical transition layer is 1.55-1.58, and the thickness is 0.5μm-1μm;

[0015] The thickness of the optical matching layer is 60nm-100nm.

[0016] In one or more embodiments of this invention, the refractive index of the first base coating is 1.52-1.55.

[0017] In one or more embodiments of this utility model, an anti-adhesion hardening layer is further provided on the first base coating layer, the thickness of the anti-adhesion hardening layer being 1μm-2μm and the refractive index being 1.52-1.55.

[0018] In one or more embodiments of this utility model, the thickness of the substrate layer is 50μm-250μm.

[0019] In one or more embodiments of this invention, the thickness of the amorphous ITO coating layer is 20nm-150nm, and the refractive index is 1.9. The thickness of 20-150nm (refractive index 1.9) and the film-forming atmosphere (argon-hydrogen mixture + 2.0-2.5% oxygen) allow the film layer to achieve stable conductivity (sheet resistance 143-149Ω / □) without an aging process, simplifying the production process and reducing production costs. Simultaneously, this film-forming atmosphere optimizes the microstructure of the film layer, enabling the conductive film to maintain stable sheet resistance and optical performance even under prolonged high-temperature baking, making it suitable for the demanding operating environments of high-end display devices.

[0020] In one or more embodiments of this utility model, the silicon dioxide coating layer has a thickness of 5nm-10nm and a refractive index of 1.45. The coating of this solution forms a dense protective barrier, isolating the ITO layer from the erosion of water vapor and oxygen in the environment, avoiding cracking, oxidation, and decreased adhesion of the amorphous ITO coating layer, and significantly improving weather resistance; its refractive index forms a reasonable transition with the amorphous ITO coating layer (1.9), without affecting light transmittance and conductivity, thus effectively protecting the amorphous ITO conductive film and improving the weather resistance of the product.

[0021] In one or more embodiments of this utility model, the display window includes a display body and an amorphous ITO conductive film formed on the display body. The display body can be a liquid crystal display screen, etc.

[0022] In one or more embodiments of this utility model, a display device includes a display window. The display device may include, but is not limited to, terminal devices such as mobile phones and laptops, and wearable devices such as smart glasses and smartwatches.

[0023] Compared with existing technologies, the amorphous ITO conductive film, window, and device of this invention achieve synergistic improvement in optical performance and weather resistance by optimizing the refractive index, thickness, and material combination of each film layer. The optical matching layer employs two schemes (stacked or single-layer) to achieve anti-reflection and anti-reflection, resulting in a transmittance of over 87%. The Si silicon coating layer enhances interlayer adhesion, while the silicon dioxide coating layer improves weather resistance. No aging process is required, reducing production costs. This invention solves the defects of low transmittance and poor weather resistance in existing amorphous ITO conductive films, making it suitable for the high-end dimming film field and possessing broad application prospects. Attached Figure Description

[0024] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0025] Figure 1 This is a schematic diagram of the structure of an amorphous ITO conductive film in one embodiment of the present invention;

[0026] Figure 2 This is a schematic diagram of the optical matching layer in an amorphous ITO conductive film according to one embodiment of the present invention.

[0027] Explanation of key figure labels:

[0028] 1. Anti-adhesion hardening layer; 2. First base coating layer; 3. Substrate layer; 4. Second base coating layer; 5. Optical matching layer; 6. Silicon coating layer; 7. Amorphous ITO coating layer; 8. Silica coating layer; 9. Optical transition layer. Detailed Implementation

[0029] To enable those skilled in the art to better understand the technical solutions in this disclosure, the technical solutions in the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. Based on the embodiments in this disclosure, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of this disclosure.

[0030] like Figure 1-2 As shown, an embodiment of the amorphous ITO conductive film of this utility model includes a composite film layer structure extending from a substrate layer: a first base coating layer is sequentially disposed on one side of the substrate layer, and a second base coating layer, an optical matching layer, a silicon coating layer, an amorphous ITO coating layer, and a silicon dioxide coating layer are sequentially disposed on the other side of the substrate layer. The first and second base coating layers are formed on both sides of the substrate layer. Furthermore, to facilitate winding, an anti-adhesion hardening layer can be formed on the outer surface of the first base coating layer to prevent interlayer adhesion, adsorption, and other issues that may affect subsequent production after winding. The structure and parameters of each layer are as follows:

[0031] (1) Substrate layer

[0032] Polyethylene terephthalate (PET) is selected as the substrate, with a thickness range of 50-250μm, specifically 50μm, 100μm, 125μm, 188μm, 250μm and any other value within this range; preferably, PET substrate with a total light transmittance of ≥90% provides a good light transmittance foundation and structural support for the overall conductive film.

[0033] (2) Primer coating

[0034] First base coat: This is a low-refractive-index base coat applied to one side of the substrate layer. It has a refractive index of 1.55 and a thickness of 40-60 nm. It is used to improve the surface smoothness of the substrate and provide a good adhesion base for subsequent coatings.

[0035] Second base coating: It is applied to the surface of the substrate layer adjacent to the optical matching layer. The refractive index can be selected from high refractive index coating liquid (refractive index 1.60-1.65) or low refractive index coating liquid (refractive index 1.52-1.55).

[0036] (3) Optical transition layer: When the second base coating of the substrate is a low refractive index coating liquid of 1.52-1.55, an optical transition layer needs to be added. The refractive index of the optical transition layer is 1.55-1.58 and the thickness is 0.5μm-1μm. Commercially available coating liquids can be used, such as Huayang's T-6600.

[0037] (4) Optical matching layer: An optical matching layer is coated on the surface of the second base layer. The refractive index of this layer will affect the overall transmittance of the conductive film. If the refractive index is too high or too low, the transmittance will be low. The refractive index is 1.60-1.68. Commercially available coating liquids such as Huayang's T-660X can be used.

[0038] Its thickness varies depending on whether an optical transition layer is present, specifically:

[0039] Option 1: As Figure 2 As shown, when there is an optical transition layer (the structural scheme is: second base layer + optical transition layer + optical matching layer), the thickness of the optical matching layer is 60nm-100nm.

[0040] Option 2: Figure 1 As shown, without an optical transition layer (the structural scheme is: second base layer + optical matching layer), the thickness of the optical matching layer is 0.5μm-1μm.

[0041] (5) Silicon coating layer

[0042] The optical matching layer is fabricated far from the surface using magnetron sputtering. The material is Si, and the thickness is controlled at 0.5-0.8 nm (refractive index around 3.3). Its function is to enhance the interlayer adhesion between the subsequent ITO layer and the optical matching layer. Because of its thin thickness, it will not significantly affect light transmission. If it is too thick, it will seriously hinder light transmission, thus reducing the transmittance of the conductive film.

[0043] (6) Non-crystalline ITO coating layer

[0044] The layer is an amorphous ITO (indium tin oxide) layer, prepared on the surface of a silicon film layer by magnetron sputtering, with a thickness of 20-150 nm (refractive index 1.9). The film formation atmosphere is an atmosphere formed by a mixture of argon, hydrogen and oxygen, specifically with argon accounting for 97-99 v / v% and hydrogen accounting for 3-1 v / v%, and oxygen accounting for 2.0-2.5 v / v, with the remainder being argon and hydrogen mixture. This atmosphere can keep the sheet resistance and optical properties of the conductive film stable under long-term high-temperature baking, and the specific thickness can be matched according to the target resistance value.

[0045] (7) Silica coating layer

[0046] A magnetron sputtering process is used to seal the surface of an amorphous ITO coating layer. The material is SiO2 with a thickness of 5-10 nm (refractive index 1.45). Without affecting the conductivity and optical properties, it effectively protects the ITO layer from environmental corrosion and significantly improves the weather resistance of the conductive film.

[0047] Additionally, an anti-adhesion hardening layer can be provided, which is formed by coating the first base layer surface using precision coating equipment. Preferably, Shin-Etsu KR-9706 HCHard-Coating material is used, with a thickness of 1-2μm. Its core function is to increase the hardness of the substrate, reduce the risk of scratches during the production process, and improve product yield.

[0048] The following detailed implementation scheme illustrates the present invention:

[0049] Example 1 (using Scheme 1)

[0050] In the amorphous ITO conductive film of this embodiment:

[0051] Substrate layer: PET material, 125μm thick, with a total light transmittance of ≥90%;

[0052] First base coat: low refractive index (1.55), 50 nm thick; Second base coat: low refractive index (1.55), 50 nm thick;

[0053] Anti-adhesion hardening layer: Shin-Etsu KR-9706, thickness 1.2μm;

[0054] Optical transition layer: Model: Huayang T-6600, refractive index: 1.57, thickness: 800nm;

[0055] Optical matching layer: Model: Huayang T-660X, refractive index: 1.61, thickness: 75nm;

[0056] Silicon coating layer: Si layer, magnetron sputtering thickness 0.5nm;

[0057] Amorphous ITO coating: Amorphous ITO, 30nm thick, film formation atmosphere: argon-hydrogen mixture (argon:hydrogen 98%:2%), oxygen 2.2%;

[0058] Silicon dioxide coating: SiO2, thickness 8nm.

[0059] Test results: Sheet resistance 144Ω / □, transmittance 87.49%, excellent weather resistance (no cracking or decrease in adhesion after environmental aging test).

[0060] Example 2 (using Scheme 1)

[0061] In the amorphous ITO conductive film of this embodiment:

[0062] Substrate layer: PET material, 125μm thick, with a total light transmittance of ≥90%;

[0063] First base coat: low refractive index (1.55), thickness 50 nm; Second base coat: low refractive index (1.55), thickness 50 nm;

[0064] Anti-adhesion hardening layer: Shin-Etsu KR-9706, thickness 1.2μm;

[0065] Optical transition layer: refractive index 1.57, thickness 800nm;

[0066] The optical matching layer has a refractive index of 1.64 and a thickness of 75 nm.

[0067] Silicon coating layer: Si layer, magnetron sputtering thickness 0.5nm;

[0068] Amorphous ITO coating: Amorphous ITO, 30nm thick, film formation atmosphere: argon-hydrogen mixture (argon:hydrogen 98%:2%), oxygen 2.2%;

[0069] Silicon dioxide coating: SiO2, thickness 8nm.

[0070] Test results: Sheet resistance 146Ω / □, transmittance 87.95%, excellent weather resistance.

[0071] Example 3 (using optical matching layer scheme two)

[0072] In the amorphous ITO conductive film of this embodiment:

[0073] Substrate layer: PET material, 125μm thick, with a total light transmittance of ≥90%;

[0074] First base coat: low refractive index (1.55), thickness 50 nm; Second base coat: high refractive index (1.62), thickness 50 nm;

[0075] Anti-adhesion hardening layer: Shin-Etsu KR-9706, thickness 1.2μm;

[0076] Optical matching layer: Huayang T-660X, 1.625, 750nm;

[0077] Silicon coating layer: Si layer, magnetron sputtering thickness 0.5nm;

[0078] Amorphous ITO coating: Amorphous ITO, 30nm thick, film formation atmosphere: argon-hydrogen mixture (98%:2%), oxygen 2.2%;

[0079] Silicon dioxide coating: SiO2, thickness 8nm.

[0080] Test results: Sheet resistance 149Ω / □, transmittance 87.13%, excellent weather resistance.

[0081] Example 4

[0082] The only difference between this embodiment and Embodiment 3 is that the refractive index of the optical matching layer is 1.60. Test results: sheet resistance 149Ω / □, transmittance 87.24%, and excellent weather resistance.

[0083] Example 5

[0084] The only difference between this embodiment and Embodiment 3 is that the refractive index of the optical matching layer is 1.68. Test results: sheet resistance 147Ω / □, transmittance 87.15%, and excellent weather resistance.

[0085] Example 6

[0086] The only difference between this embodiment and Embodiment 1 is: optical matching layer: Huayang T-660X, 800nm. Test results: sheet resistance 143Ω / □, transmittance 87.57%, excellent weather resistance (no cracking or decrease in adhesion after environmental aging test).

[0087] Comparative Example 1 (low refractive index of optical matching layer)

[0088] The only difference between this comparative example and Example 3 is that the refractive index of the optical matching layer is 1.57, the sheet resistance is 143Ω / □, and the transmittance is only 82.91%, which verifies the necessity of the refractive index of the optical matching layer being in the range of 1.60-1.68.

[0089] Comparative Example 2 (Silicon coating layer too thick):

[0090] The only difference between this comparative example and Example 1 is that the silicon coating thickness is 1.0 nm. The test results are: sheet resistance 145 Ω / □ and transmittance 83.42%, which proves the importance of controlling the silicon coating thickness to 0.5-0.8 nm.

[0091] Comparative Example 3 (without silicon dioxide coating):

[0092] The only difference between this comparative example and Example 3 is that there is no SiO2 silica coating layer. The test results are: sheet resistance 146Ω / □, transmittance 86.18%, and poor weather resistance (NG in dry cross-cut test, cracking of ITO layer), highlighting the key role of the silica coating layer in weather resistance.

[0093] Comparative Example 4 (without silicon dioxide coating):

[0094] The only difference between this comparative example and Example 1 is that there is no SiO2 silica coating layer, resulting in poor weather resistance (NG in dry cross-cut test, ITO layer cracking). The test results are: sheet resistance 142Ω / □, transmittance 86.21%, and poor weather resistance (NG in dry cross-cut test, ITO layer cracking), highlighting the key role of the silica coating layer in weather resistance.

[0095] Comparative Example 5

[0096] The only difference between this comparative example and Example 1 is that the refractive index of the optical transition layer is 1.6. The resulting sheet resistance is 144 Ω / □, and the transmittance is 83.46%. Although the weather resistance is excellent, the low transmittance fails to meet the requirements.

[0097] In summary, the amorphous ITO conductive film of this invention has the following advantages:

[0098] (1) High transmittance: Through the optimization of the refractive index and structural design (stacked or single layer) of the optical matching layer, the anti-reflection and anti-transmittance effect is achieved, and the transmittance of the product can reach more than 87%, which solves the defect of low transmittance of existing non-crystalline ITO films;

[0099] (2) Excellent weather resistance: The SiO2 silicon dioxide coating layer effectively isolates corrosive substances such as water vapor and oxygen in the environment, avoiding problems such as cracking of the ITO layer and decreased adhesion. The weather resistance is excellent after testing.

[0100] (3) Low cost and high efficiency: It maintains the advantage of non-crystalline ITO that does not require an aging process, simplifies the production process and reduces production costs, while the setting of an anti-adhesion hardening layer improves the production yield.

[0101] (4) Structural stability: The Si silicon coating layer enhances the interlayer adhesion, and the synergistic effect of each film layer ensures the structural stability and performance consistency of the conductive film during use.

[0102] It will be apparent to those skilled in the art that this disclosure is not limited to the details of the exemplary embodiments described above, and that this disclosure can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of this disclosure is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within this disclosure. No reference numerals in the claims should be construed as limiting the scope of the claims.

[0103] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. An amorphous ITO conductive film, comprising a substrate layer and a first base coating layer and a second base coating layer disposed on both sides of the substrate layer, characterized in that: An optical matching layer, a silicon coating layer, an amorphous ITO coating layer, and a silicon dioxide coating layer are sequentially stacked on the second base coating layer. The refractive index of the optical matching layer is 1.60-1.68, and the thickness of the silicon coating layer is 0.5-0.8 nm.

2. The non-crystalline ITO conductive film according to claim 1, characterized by The refractive index of the second base coating is 1.60-1.65, the thickness of the second base coating is 40nm-60nm, and the thickness of the optical matching layer is 0.5μm-1μm.

3. The non-crystalline ITO conductive film according to claim 1, wherein An optical transition layer is also provided between the second base coating layer and the optical matching layer; The refractive index of the second base coating is 1.52-1.55, and the thickness of the second base coating is 40nm-60nm; The optical transition layer has a refractive index of 1.55-1.58 and a thickness of 0.5μm-1μm; The thickness of the optical matching layer is 60nm-100nm.

4. The non-crystalline ITO conductive film according to claim 1, wherein The refractive index of the first base coating is 1.52-1.

55.

5. The amorphous ITO conductive film according to claim 1, wherein The first base coating layer is further provided with an anti-adhesion hardening layer, the thickness of which is 1μm-2μm and the refractive index is 1.52-1.

55.

6. The amorphous ITO conductive film according to claim 1, characterized in that, The thickness of the substrate layer is 50μm-250μm.

7. The amorphous ITO conductive film according to claim 1, wherein The thickness of the amorphous ITO coating layer is 20nm-150nm.

8. The amorphous ITO conductive film according to claim 1, characterized in that, The thickness of the silicon dioxide coating layer is 5nm-10nm.

9. A display window, characterised in that It includes a display body and an amorphous ITO conductive film formed on the display body according to any one of claims 1-8.

10. A display device, characterized by Includes the display window as described in claim 9.

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