Exoatomic preparation chamber and semiconductor material processing system

Abstract

The utility model discloses a kind of superatom preparation chamber and semiconductor material processing system.Superatom preparation chamber includes processing chamber, vacuum pump, gas delivery piece, separating piece and temperature adjusting piece.Processing chamber includes first chamber and second chamber, which are interconnected.Vacuum pump is used to selectively make processing chamber reach predetermined vacuum state.Gas delivery piece includes nozzle arranged in second chamber, and gas delivery piece is configured to input first gas into second chamber through nozzle to generate superatom.Separating piece is used to separate part of superatom and output separated superatom outside processing chamber, and the communication of first chamber and second chamber, nozzle and separating piece are sequentially and spaced apart along first direction.Temperature adjusting piece is arranged on the circumferential side of nozzle, and temperature adjusting piece is used to improve the uniformity of ambient temperature on the circumferential side of nozzle.The utility model can improve the uniformity of generated cluster size, so as to produce size-uniform superatom beam.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor material processing equipment technology, and in particular to a superatomic preparation chamber and a semiconductor material processing system. Background Technology

[0002] Gas cluster atomic beams are applied in surface etching, cleaning, smoothing, and carbon-containing thin film deposition. Gas clusters are aggregates of gaseous nanomaterials, loosely bound together from a few to thousands of molecules. After ionization through methods such as electron bombardment, they form a directional beam with controllable energy. This ion beam then passes through a neutralizer to form a gas cluster atomic beam. Large clusters, due to their ability to carry a large amount of energy and the moderate energy of individual molecules, only affect the shallow layer of the surface upon impact, avoiding the deep damage associated with traditional ion beam processing. This gives them a significant advantage in surface modification.

[0003] However, cluster formation is significantly affected by temperature: as temperature increases, molecular thermal motion intensifies, making it difficult to form large clusters, resulting in small and dispersed clusters; conversely, excessively low temperatures lead to insufficient molecular activity, resulting in low cluster formation efficiency and uneven size. This dimensional instability severely impacts the consistency of gas cluster atomic beam processing, limiting its application in high-precision machining.

[0004] This section provides background information related to this application, which is not necessarily prior art. Utility Model Content

[0005] The purpose of this invention is to provide a superatomic preparation chamber and a semiconductor material processing system that can improve the uniformity of the generated cluster size, thereby producing superatomic beams with uniform size.

[0006] To achieve the above objectives, the following technical solution is provided:

[0007] A superatomic preparation chamber, the superatomic preparation chamber comprising:

[0008] The processing chamber includes a first chamber and a second chamber that are interconnected, wherein the extending direction of the first chamber intersects the extending direction of the second chamber;

[0009] A vacuum pump is located at the end of the first chamber away from the second chamber, and is used to selectively bring the processing chamber to a predetermined vacuum state.

[0010] A gas delivery device includes a nozzle disposed within a second chamber, the gas delivery device being configured to introduce a first gas into the second chamber through the nozzle to generate superatoms;

[0011] A separator is used to separate a portion of the superatoms and output the separated superatoms outside the processing chamber. The connection between the first chamber and the second chamber, the nozzle, and the separator are arranged sequentially at intervals along a first direction.

[0012] A temperature regulating element is disposed on the periphery of the nozzle to improve the uniformity of the ambient temperature around the nozzle.

[0013] As an alternative to the superatomic preparation chamber, the temperature regulating component includes a medium input section, a medium output section, and an regulating body, which is located in the second chamber and arranged around the nozzle.

[0014] As an alternative to the superatomic preparation chamber, a temperature detection device is also included, which is disposed in the medium output section and used to detect the temperature of the temperature exchange medium output by the temperature exchange medium output section.

[0015] As an alternative to the superatom preparation chamber, the separation element includes an input port and an output port. The input port is used to separate a portion of the superatoms, and the output port is used to output the superatoms to the outside of the processing chamber.

[0016] The nozzle and the input port are coaxially arranged.

[0017] As an alternative to the superatomic preparation chamber, the radial dimension of the input port is smaller than the radial dimension of the output port.

[0018] As an alternative to the superatomic preparation chamber, the gas delivery device further includes a delivery pipeline, and the nozzle includes a first port and a second port. The first port is connected to the delivery pipeline, and the second port is used to deliver the first gas into the second chamber. The radial dimension of the first port is smaller than the radial dimension of the second port.

[0019] As an alternative to the superatomic preparation chamber, the radial dimension of the input port is larger than the radial dimension of the first port.

[0020] As an alternative to the superatomic preparation chamber, the radial dimension of the input port is 1mm-2mm; and / or, the radial dimension of the first port is 0.05mm-0.2mm.

[0021] As an alternative to the superatomic preparation chamber, the distance between the second port and the input port along the first direction is 15mm-35mm.

[0022] A semiconductor material processing system is also provided, including the superatomic preparation chamber as described in any of the foregoing embodiments.

[0023] A gas shaping chamber, connected to the superatom preparation chamber and used to receive the superatoms, the gas shaping chamber includes a gas shaping device for shaping the superatoms to form a directional beam;

[0024] A surface treatment chamber includes a semiconductor material carrier for carrying semiconductor material. The surface treatment chamber is connected to the gas shaping chamber so that the directional beam enters the surface treatment chamber and processes the semiconductor material.

[0025] Wherein, the vacuum degree of the superatom preparation chamber is less than that of the gas shaping chamber; and / or, the vacuum degree of the gas shaping chamber is less than that of the surface treatment chamber.

[0026] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0027] The superatom preparation chamber and semiconductor material processing system provided by this invention utilizes a first chamber connected to a vacuum pump. This allows the processing chamber to achieve a vacuum environment, and the vacuum pump's exhaust port is positioned away from the nozzle along a first direction, reducing interference from the vacuum pump on the gas flow from the nozzle. This minimizes the possibility of the first gas or superatoms ejected from the nozzle being pumped to the outside by the vacuum pump, thus improving the utilization rate of the formed superatoms. A gas delivery component transports the first gas through the nozzle to the second chamber, generating superatoms. A separation component separates some superatoms and outputs them outside the processing chamber. The temperature around the nozzle changes due to the superatom transformation process and external heat conduction. A temperature regulating component can adaptively increase or decrease the temperature around the nozzle based on these temperature changes, maintaining it within a constant range. This reduces the influence of external temperature during superatom generation, improves the uniformity of superatom size, and produces superatom beams with uniform dimensions. Attached Figure Description

[0028] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments of this utility model will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the content of the embodiments of this utility model and these drawings without creative effort.

[0029] Figure 1 This is a schematic diagram of a semiconductor material processing system according to an embodiment of the present invention;

[0030] Figure 2 This is a schematic diagram of a superatomic preparation chamber according to an embodiment of the present invention;

[0031] Figure 3 This is a schematic diagram of another superatomic preparation chamber in an embodiment of this utility model.

[0032] Figure label:

[0033] 1000. Semiconductor material processing system; 100. Superatom preparation chamber; 200. Gas shaping chamber; 300. Surface treatment chamber;

[0034] 10. Processing chamber; 11. First chamber; 12. Second chamber; 20. Gas delivery component; 21. Nozzle; 211. First port; 212. Second port; 22. Delivery pipeline; 30. Separator; 31. Input port; 32. Output port; 40. Temperature control component; 41. Medium input section; 42. Medium output section; 43. Control body; 50. Temperature detection component; 60. Fluid supply device; 70. Vacuum pump; X, First direction; Y, Second direction. Detailed Implementation

[0035] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. The components of the embodiments of this utility model described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0036] In the description of this utility model, it should be noted that the terms "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of this utility model is in use. They are used only for the convenience of describing this utility model and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. Furthermore, the terms "first," "second," and "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance. In the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0037] In the description of this utility model, it should also be noted that, unless otherwise explicitly specified and limited, the terms "set" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0038] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.

[0039] Figure 1 This is a schematic diagram of a semiconductor material processing system according to an embodiment of the present invention. Figure 2 This is a schematic diagram of a superatomic preparation chamber in an embodiment of this utility model. Figure 3 This is a schematic diagram of another superatomic preparation chamber in an embodiment of this utility model.

[0040] This invention provides a semiconductor material processing system 1000, which includes a superatom preparation chamber 100, a gas shaping chamber 200, and a surface treatment chamber 300. The gas shaping chamber 200 is connected to the superatom preparation chamber 100 and is used to receive superatoms. The gas shaping chamber 200 includes a gas shaping device for shaping the superatoms to form a directional beam. The surface treatment chamber 300 includes a semiconductor material carrier device for carrying semiconductor material. The surface treatment chamber 300 is connected to the gas shaping chamber 200 so that the directional beam enters the surface treatment chamber 300 and processes the semiconductor material. The vacuum level of the superatom preparation chamber 100 is lower than that of the gas shaping chamber 200; and / or, the vacuum level of the gas shaping chamber 200 is lower than that of the surface treatment chamber 300.

[0041] The superatom preparation chamber 100 can form superatoms from gas. The formed superatoms then pass through a separator 30 into a gas shaping chamber 200. The gas shaping chamber 200 can shape the superatoms, for example, through ionization, ion acceleration, or ion neutralization. The shaped superatoms form a directional beam, which can process semiconductor materials within the surface treatment chamber 300. For example, it can polish or deposit coatings on the semiconductor materials. Optionally, the semiconductor materials include wafers and chips. Optionally, the directional beam includes an atomic beam.

[0042] The vacuum level of the superatom preparation chamber 100 refers to the vacuum level of the chamber within the superatom preparation chamber 100 used for preparing superatoms. The vacuum level of the gas shaping chamber 200 refers to the vacuum level of the chamber within the gas shaping chamber 200 used for shaping superatoms. The vacuum level of the surface treatment chamber 300 refers to the vacuum level of the chamber carrying the semiconductor material. Through the above-described configuration, this embodiment of the application generates a negative pressure difference between the three chambers, causing gas to flow from the superatom preparation chamber through the gas shaping chamber into the surface treatment chamber, thereby reducing the possibility of back-diffusion of gas and improving the precision of beam control.

[0043] This embodiment of the invention provides a superatomic preparation chamber 100, which includes a processing chamber 10, a vacuum pump 70, a gas delivery component 20, a separator 30, and a temperature regulating component 40. The processing chamber 10 includes a first chamber 11 and a second chamber 12 that are interconnected, with the extension direction of the first chamber 11 intersecting the extension direction of the second chamber 12. The vacuum pump 70 is located at the end of the first chamber 11 away from the second chamber 12, and is used to selectively bring the processing chamber 10 to a predetermined vacuum state. The gas delivery component 20 includes a nozzle 21 disposed within the second chamber 12, and is configured to introduce a first gas into the second chamber 12 through the nozzle 21 to generate superatoms. The separator 30 is used to separate a portion of the superatoms and output the separated superatoms outside the processing chamber 10. The connection between the first chamber 11 and the second chamber 12, the nozzle 21, and the separator 30 are sequentially spaced along a first direction X. Temperature regulating element 40 is disposed on the periphery of nozzle 21, and temperature regulating element 40 is used to improve the uniformity of ambient temperature on the periphery of nozzle.

[0044] The superatomic preparation chamber 100 may include a housing, within which a processing chamber 10 is located. A vacuum pump 70 is connected to the housing, and the vacuum pump 70 can be selectively turned on or off to achieve a predetermined vacuum state within the processing chamber 10, thereby facilitating the generation of superatoms. The predetermined vacuum state may include a vacuum environment with a preset vacuum level.

[0045] Exemplarily, a first chamber 11 extends along a second direction Y, and a second chamber 12 extends along a first direction X. The nozzle 21 of the gas delivery member 20 is located within the second chamber 12. A separator 30 is located within the second chamber 12. The gas delivery member 20 passes through the housing and enters the second chamber 12. A vacuum pump 70 communicates with the first chamber 11 and evacuates the second chamber 12 through the first chamber 11. Optionally, the vacuum pump 70 may be connected to a wall of the first chamber 11 away from the second chamber 12.

[0046] The connection between the first chamber 11 and the second chamber 12 is the exhaust port for the vacuum pump 70 to evacuate the second chamber 12. The connection between the first chamber 11 and the second chamber 12, the nozzle 21, and the separator 30 are arranged sequentially at intervals along the first direction X. That is, the exhaust port is arranged on the side away from the nozzle 21 and facing the separator 30, so that the flow direction of the gas ejected from the nozzle 21 and the exhaust port are located on opposite sides of the nozzle 21, thereby reducing the interference of the vacuum pump 70 on the airflow ejected from the nozzle 21.

[0047] The gas delivery device 20 delivers a first gas into the processing chamber 10, and the first gas forms superatoms in the second chamber 12. The first gas can be a high-pressure gas. The gas delivery device 20 also includes a delivery conduit 22, which passes through the housing to enable an external gas supply device to deliver the first gas into the second chamber 12. Optionally, the first gas includes argon (Ar), oxygen (O2), nitrogen (N2), or sulfur hexafluoride (SF6).

[0048] Understandably, in the gas supply equipment, the target material or semiconductor material can be converted into a first gas through processes such as high-temperature heating and gas evaporation. At this time, the gas is high-energy gaseous atoms, forming high-density atomic vapor. Because of their extremely high thermal kinetic energy, the atoms exist in a free state and are difficult to stably combine. When the gaseous atoms are ejected into the vacuum environment through the nozzle 21 of the gas delivery device 20, they undergo adiabatic expansion, causing a rapid increase in gas volume, conversion of internal energy into kinetic energy, a significant drop in temperature, and a rapid decrease in gas density, providing a "low-interference" environment for subsequent aggregation. After cooling, the atoms, because their kinetic energy is lower than the interatomic binding energy (metallic components, van der Waals forces, etc.), begin to nucleate through collisions, initially forming "embryonic clusters." These embryonic clusters gradually aggregate and grow through collisions with surrounding atoms or other small clusters. The rapid cooling and density decrease caused by expansion "freezes" this process, preventing excessive cluster growth (such as the formation of nanoparticles). During aggregation, the clusters evolve towards a stable configuration and retain magic number structures through electronic structure rearrangement and energy selection, thus forming superatoms.

[0049] During the formation of superatoms, the superatoms absorb ambient temperature, causing the ambient temperature (i.e., the temperature of the gas flowing through nozzle 21 and subsequent areas) to undergo drastic changes from room temperature to extremely low temperatures (hereinafter referred to as drastic ambient temperature changes). This causes the superatoms to form intermediate or metastable structures, making them susceptible to atomic rearrangement and disruption of the metastable structure due to external factors. The temperature regulating component 40 maintains the temperature within the second chamber 12 within a constant temperature range (hereinafter referred to as constant ambient temperature), thereby promoting the ordering of the superatomic structure and improving the stability of the superatoms. Furthermore, drastic ambient temperature changes inhibit cluster growth, making it difficult to generate large-sized clusters and resulting in a narrow size control range. In contrast, a constant ambient temperature allows for a stable cluster growth rate. By controlling the reaction time, the cluster size can be precisely controlled to improve the uniformity of the cluster size generated by the superatoms and enhance their stability.

[0050] The separator 30 can separate a portion of the superatoms and output them outside the processing chamber 10. As an example, superatoms ejected from nozzle 21 move towards the separator 30, which separates the higher-quality superatoms and outputs this portion outside the processing chamber 10, for example, to the gas shaping chamber 200. Here, "separation" refers to the separator 30 capturing a portion of the superatoms (e.g., higher-quality superatoms) and isolating another portion (e.g., lower-quality superatoms) outside the separator 30, preventing the other portion (e.g., lower-quality superatoms) from entering the gas shaping chamber 200. Here, "higher-quality" refers to the superatoms having better size, stability, and other properties, and not specifically to their mass. Optionally, the separator 30 includes a beam splitter.

[0051] For example, the temperature regulator 40 can regulate the temperature around the nozzle. For instance, when the temperature around the nozzle decreases due to absorption during the superatom generation process, the temperature regulator 40 can heat the nozzle to increase the temperature around the nozzle; when the operating temperature of an external device (e.g., the gas shaping chamber 200) is conducted to the superatom preparation chamber 100, causing the temperature around the nozzle to rise, the temperature regulator 40 can cool the nozzle to reduce the temperature around the nozzle, thereby maintaining the temperature around the nozzle within a constant temperature range. Optionally, the constant temperature range includes room temperature.

[0052] Optionally, the temperature regulating element 40 may include one or a combination of cooling and heating elements. Of course, the temperature regulating element 40 may also maintain the temperature around the nozzle by introducing a temperature medium at a constant temperature or different temperatures.

[0053] In the superatom preparation chamber 100 provided in this embodiment, by connecting a vacuum pump 70 to a first chamber 11, the processing chamber 10 can be used to achieve a vacuum environment. The exhaust port of the vacuum pump 70 is positioned away from the nozzle 21 along the first direction X, thereby reducing the interference of the vacuum pump 70 on the gas flow ejected from the nozzle 21, decreasing the likelihood of the first gas or superatoms ejected from the nozzle 21 being pumped to the outside by the vacuum pump 70, and improving the utilization rate of the formed superatoms. The gas delivery component 20 can deliver the first gas to the second chamber 12 through the nozzle 21 to generate superatoms, and the separation component 30 can receive a portion of the superatoms and output them outside the processing chamber 10. The temperature around the nozzle 21 changes under the influence of factors such as the superatom transformation process and heat conduction from external devices. The temperature regulating component 40 can adaptively increase or decrease the temperature around the nozzle 21 according to the temperature changes around the nozzle 21, maintaining the temperature around the nozzle 21 within a constant range, thereby reducing the influence of external temperature during superatom generation and improving the uniformity of superatom size.

[0054] In some alternative embodiments, the projection of the nozzle 21 overlaps with the projection of the temperature regulating member 40 along the second direction Y, and the second direction Y intersects with the first direction X.

[0055] Optionally, the first direction X and the second direction Y are perpendicular.

[0056] For example, along the second direction Y, the projection of the nozzle 21 overlaps with the projection of the temperature regulator 40, that is, the temperature regulator 40 is arranged around the periphery of the nozzle 21. In some examples, along the second direction Y, the projection of the nozzle 21 partially overlaps with the projection of the temperature regulator 40; in other examples, along the second direction Y, the projection of the nozzle 21 falls within the projection of the temperature regulator 40.

[0057] In these alternative embodiments, the upward arrangement helps to shorten the distance between the temperature regulator 40 and the nozzle 21, further improving the stability of the ambient temperature of the superatomic pathway and enhancing the uniformity and stability of the superatomic size.

[0058] In some alternative embodiments, the temperature regulating element 40 includes a medium input section 41, a medium output section 42, and an regulating body 43, which is located in the second chamber 12 and is arranged around the nozzle 21.

[0059] Optionally, the temperature regulating element 40 is configured such that the temperature medium enters the regulating body 43 via the medium input section 41 and is delivered to the outside via the medium output section 42.

[0060] As an example, the medium input section 41 can be a pipeline structure. The medium input section 41 passes through the outer shell. One end of the medium input section 41 can be connected to the fluid supply chamber 60, and the other end of the medium input section 41 is connected to the regulating body 43. The fluid supply chamber 60 delivers a temperature exchange medium (such as a fluid medium: liquid temperature exchange medium or gaseous temperature exchange medium) at a preset temperature to the regulating body 43 through the medium input section 41. The regulating body 43 is used to maintain the temperature around the nozzle 21.

[0061] As an example, the medium output section 42 can be a pipeline structure. The medium output section 42 passes through the outer shell. One end of the medium output section 42 can be connected to the fluid supply chamber 60, and the other end of the medium output section 42 can be connected to the regulating body 43. After the temperature exchange medium in the regulating body 43 exchanges heat with the environment in the second chamber 12, it is transported to the fluid supply chamber 60 through the medium output section 42. After the temperature exchange medium is heated or cooled by the fluid supply chamber 60, it is transported to the regulating body 43 through the medium input section 41, thereby improving the temperature regulation capability of the temperature regulating component 40.

[0062] In some alternative embodiments, the superatomic preparation chamber 100 further includes a temperature detection element 50, which is disposed on the medium output section 42 and is used to detect the temperature of the temperature exchange medium output by the temperature exchange medium output section 42.

[0063] Understandably, when the temperature exchange medium's temperature rises or falls beyond the preset range after heat exchange with the environment around the nozzle 21, it is necessary to adjust the ambient temperature around the nozzle 21 to reduce the possibility of excessively high or low temperatures. Of course, when the temperature detection element 50 detects that the temperature of the temperature exchange medium exceeds the preset range, it can also accelerate or slow down the flow rate of the temperature exchange medium within the temperature regulating element 40 to adjust the temperature around the nozzle 21 and reduce temperature fluctuations around the nozzle 21.

[0064] In some optional embodiments, the separator 30 includes an input port 31 and an output port 32, the input port 31 for separating a portion of the superatoms, and the output port 32 for outputting the superatoms to the outside of the processing chamber 10. The nozzle 21 and the input port 31 are coaxially arranged.

[0065] For example, nozzle 21 and input port 31 are coaxially arranged; for instance, the opening of nozzle 21 facing input port 31 is coaxially arranged with input port 31. Of course, input port 31 and output port 32 can also be coaxially arranged, that is, nozzle 21 and output port 32 are coaxially arranged.

[0066] In these alternative embodiments, the input port 31 can acquire superatoms in the core region of the superatoms ejected from the nozzle 21. Since the superatoms closer to the core region have higher size uniformity, the separator 30 can acquire superatoms of better quality, thereby reducing the possibility that superatoms of poor quality (such as those that are too small) will enter the gas shaping chamber 200 through the separator 30, and reducing the difficulty of subsequent gas shaping processes.

[0067] In some alternative embodiments, the radial dimension of the input port 31 is smaller than that of the output port 32. This facilitates the guidance and collimation of the superatomic beam passing through the input port 31, reduces the possibility of turbulence or eddies forming in the airflow within the separator 30, and improves the integrity of the superatoms. Furthermore, the coaxial arrangement of the nozzle 21 and the input port 31 enables precise capture of the core region, improving the superatomic beam collection efficiency.

[0068] Optionally, the inner diameter of the separator 30 can be gradually reduced or decreased in a gradient direction from the input port 31 to the output port 32.

[0069] In some alternative embodiments, the gas delivery device 20 further includes a delivery conduit 22, and the nozzle 21 includes a first port 211 and a second port 212. The first port 211 is connected to the delivery conduit 22, and the second port 212 is used to deliver the first gas into the second chamber 12. The radial dimension of the first port 211 is smaller than the radial dimension of the second port 212.

[0070] Optionally, the inner diameter of the nozzle 21 can decrease gradually or in a gradient manner in the direction from the first port 211 to the second port 212.

[0071] Optionally, the first port 211 and the input port 31 of the separator 30 are coaxially configured.

[0072] Optionally, the second port 212 and the input port 31 of the separator 30 are coaxially configured.

[0073] Optionally, the first port 211 and the output port 32 of the separator 30 are coaxially configured.

[0074] Optionally, the second port 212 and the output port 32 of the separator 30 are coaxially configured.

[0075] In these alternative embodiments, the nozzle 21 can be shaped like a Varar nozzle 21, which facilitates adjusting the cooling rate and airflow parameters of the first gas by adjusting the inner diameter of the nozzle 21, thereby improving the controllability of the cooling rate and airflow parameters of the first gas.

[0076] In some alternative embodiments, the radial dimension of the input port 31 is larger than the radial dimension of the first port 211. The first port 211 of the nozzle 21 accelerates the airflow by reducing its inner diameter, but the jet stream it ejects will gradually expand due to natural divergence. If the inner diameter of the input port 31 of the separator 30 is not larger than the inner diameter of the first port 211 of the nozzle 21, the core jet stream may be intercepted, and the high-speed airflow is prone to impacting the edge of the input port 31 of the separator 30, generating shock waves and turbulence, which will damage the cluster structure. However, when the inner diameter of the input port 31 of the separator 30 is slightly larger, it can both contain the high-density core cluster area that initially diverges after being ejected from the nozzle 21, reducing jet stream loss, and prevent the airflow from directly impacting the inner wall. By adapting to the pressure gradient, a smooth transition is formed, reducing the risk of turbulence and shock waves.

[0077] In some alternative embodiments, the radial dimension of the input port 31 is 1mm-2mm; and / or, the radial dimension of the first port 211 is 0.05mm-0.2mm.

[0078] For example, the radial dimension of the input port 31 is 1 mm, 1.1 mm, 1.2 mm, 1.3 mm, 1.4 mm, 1.5 mm, 1.6 mm, 1.7 mm, 1.8 mm, 1.9 mm or 2 mm.

[0079] For example, the radial dimension of the first port 211 is 0.05mm, 0.06mm, 0.07mm, 0.08mm, 0.09mm, 0.1mm, 0.11mm, 0.13mm, 0.15mm, 0.18mm or 0.2mm.

[0080] In some alternative embodiments, the distance between the second port 212 and the input port 31 along the first direction is 15mm-35mm.

[0081] For example, the distance between the second port 212 and the input port 31 along the first direction is 15mm, 16mm, 18mm, 20mm, 22mm, 24mm, 26mm, 29mm, 30mm or 35mm.

[0082] The embodiments of this application, through the above-described settings, facilitate the adjustment of the superatomic size according to design requirements, while simultaneously increasing the quality of the superatomic size separated by the separator.

[0083] This embodiment provides a semiconductor material processing system 1000, including a superatom preparation chamber 100, a gas shaping chamber 200, and a surface treatment chamber 300 as described in any of the above embodiments. The gas shaping chamber 200 is connected to the superatom preparation chamber 100 and is used to receive superatoms. The gas shaping chamber 200 includes a gas shaping device for shaping the superatoms to form a directional beam. The surface treatment chamber 300 includes a semiconductor material carrier device for carrying semiconductor material. The surface treatment chamber 300 is connected to the gas shaping chamber 200 so that the directional beam enters the surface treatment chamber 300 and processes the semiconductor material. The vacuum level of the superatom preparation chamber 100 is lower than that of the gas shaping chamber 200; and / or, the vacuum level of the gas shaping chamber 200 is lower than that of the surface treatment chamber 300. Since the semiconductor material processing system 1000 provided in this application includes the superatomic preparation chamber 100 of any of the above embodiments, the semiconductor material processing system 1000 provided in this application has the beneficial effects of the superatomic preparation chamber 100 of any of the above embodiments, which will not be repeated here.

[0084] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments. Many other equivalent embodiments may be included without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. An ultracold atom preparation chamber, characterized by, include: The processing chamber (10) includes a first chamber (11) and a second chamber (12) that are interconnected, wherein the extending direction of the first chamber (11) intersects the extending direction of the second chamber (12); A vacuum pump (70) is disposed at one end of the first chamber (11) away from the second chamber (12) for selectively bringing the processing chamber (10) to a predetermined vacuum state; A gas delivery device (20) includes a nozzle (21) disposed within the second chamber (12), the gas delivery device (20) being configured to introduce a first gas into the second chamber (12) through the nozzle (21) to generate superatoms; The separator (30) is used to separate a portion of the superatoms and output the separated superatoms to the outside of the processing chamber (10). The communication between the first chamber (11) and the second chamber (12), the nozzle (21) and the separator (30) are arranged sequentially at intervals along a first direction. A temperature regulating element (40) is disposed on the periphery of the nozzle (21) to improve the uniformity of the ambient temperature around the nozzle (21).

2. The ultratom preparation chamber of claim 1, wherein, The temperature regulating component (40) includes a medium input section (41), a medium output section (42), and an regulating body (43). The regulating body (43) is located in the second chamber (12) and is arranged around the nozzle (21).

3. The superatomic preparation chamber according to claim 2, characterized in that, It also includes a temperature detection element (50), which is disposed on the medium output section (42) and is used to detect the temperature of the temperature exchange medium output by the temperature exchange medium output section (42).

4. The ultratom preparation chamber of claim 1, wherein, The separator (30) includes an input port (31) and an output port (32). The input port (31) is used to separate a portion of the superatoms, and the output port (32) is used to output the superatoms to the outside of the processing chamber (10). The nozzle (21) and the input port (31) are coaxially arranged.

5. The ultracold-atom production cell of claim 4, wherein, The radial dimension of the input port (31) is smaller than the radial dimension of the output port (32).

6. The ultratom preparation chamber of claim 4, wherein, The gas delivery component (20) further includes a delivery pipeline (22), and the nozzle (21) includes a first port (211) and a second port (212). The first port (211) is connected to the delivery pipeline (22), and the second port (212) is used to deliver the first gas into the second chamber (12). The radial dimension of the first port (211) is smaller than the radial dimension of the second port (212).

7. The ultracold-atom production cell of claim 6, wherein, The radial dimension of the input port (31) is greater than the radial dimension of the first port (211).

8. The ultracold-atom production cell of claim 7, wherein, The radial dimension of the input port (31) is 1mm-2mm; and / or, the radial dimension of the first port is 0.05mm-0.2mm.

9. The ultracold-atom production cell of claim 8, wherein, The distance between the second port (212) and the input port (31) along the first direction is 15mm-35mm.

10. A semiconductor material processing system, characterized by, include: The superatomic preparation chamber (100) as described in any one of claims 1 to 9; A gas shaping chamber (200) is connected to the superatom preparation chamber (100) and is used to receive the superatoms. The gas shaping chamber (200) includes a gas shaping device for shaping the superatoms to form a directional beam. A surface treatment chamber (300) includes a semiconductor material carrier for carrying semiconductor material. The surface treatment chamber (300) is connected to the gas shaping chamber (200) so that the directional beam enters the surface treatment chamber (300) and processes the semiconductor material. Wherein, the vacuum degree of the superatom preparation chamber (100) is less than that of the gas shaping chamber (200); and / or, the vacuum degree of the gas shaping chamber (200) is less than that of the surface treatment chamber (300).

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