Interlayer transition structure between different layer signal transmission lines and SIW conversion

Abstract

This invention discloses an interlayer transition structure for signal transmission lines and SIW conversion between different layers, relating to the field of microwave circuit design technology. The interlayer transition structure includes: a first metal layer, grounded; a first dielectric layer, with a first metallized via; a second metal layer, with a first via pad and a gradient balun structure connected to and surrounding the first via pad, and a first signal transmission line connected to the gradient balun structure and the first via pad; a second dielectric layer, with a first signal hole connecting the first signal transmission line; a third metal layer, with a second via pad connecting the first signal hole; a fourth dielectric layer, with a fourth signal hole and a fourth metallized via; and a fifth metal layer, with a second signal transmission line connected to the fourth signal hole. This invention can efficiently achieve interlayer transition between two transmission methods and is suitable for multilayer PCB design and fabrication.

Description

Technical Field

[0001] This utility model relates to the field of microwave circuit design technology, specifically to an interlayer transition structure between different layer signal transmission lines and SIW conversion. Background Technology

[0002] Signal transmission lines (e.g., microstrip lines or striplines) and SIW (substrate integrated waveguide) structures are commonly used to build electromagnetic wave transmission networks, with important and widespread applications in the radio frequency and microwave fields. SIWs offer advantages such as low loss, high Q value, and strong anti-interference capabilities, making them suitable for signal transmission. Signal transmission lines are easy to integrate, facilitating direct interconnection with active devices. By designing conversion structures, efficient signal links can be achieved from active chip to microstrip line / stripline to SIW to antenna.

[0003] Meanwhile, the low-loss SIW structure can be used in the feed network of the antenna array, the signal transmission line structure is used to connect the antenna elements, and the conversion structure can reduce signal reflection between different transmission structures and improve array efficiency. However, the existing transmission conversion structure between the signal transmission line and SIW has disadvantages such as narrow bandwidth, high design complexity, and high requirements for manufacturing precision. Utility Model Content

[0004] To address the shortcomings of existing signal transmission line-SIW transmission conversion structures, such as narrow bandwidth, high design complexity, and high requirements for manufacturing precision, this invention provides an interlayer transition structure for the conversion between different layers of signal transmission lines and SIW, which can efficiently realize the interlayer transition of the transmission form between signal transmission lines and SIW.

[0005] This utility model is achieved through the following technical solution.

[0006] This invention provides an interlayer transition structure for signal transmission lines and SIW conversion at different layers, the interlayer transition structure comprising the following components stacked sequentially:

[0007] A first metal layer, wherein the first metal layer is grounded;

[0008] A first dielectric layer, wherein a first metallized via is provided in the first dielectric layer;

[0009] The second metal layer is provided with a first via and a gradient balun structure connected to and surrounding the first via, a first signal transmission line connected to the gradient balun structure and the first via, and the first metal layer, the first dielectric layer, the first metallized via, and the gradient balun structure constitute a substrate integrated waveguide (SIW) structure.

[0010] A second dielectric layer is provided therein, wherein a first signal hole is provided in the second dielectric layer, and the first signal hole is connected to the first signal transmission line;

[0011] A third metal layer, wherein the third metal layer is provided with a second hole disk, and the second hole disk is connected to the first signal hole;

[0012] A fourth dielectric layer, wherein the fourth dielectric layer is provided with a fourth signal hole and a fourth metallized via, and the fourth metallized via surrounds the fourth signal hole to form a near-coaxial structure with the fourth signal hole;

[0013] The fifth metal layer is provided with a second signal transmission line and a second metal disk, wherein the second signal transmission line is connected to the fourth signal hole through the second metal disk.

[0014] In some embodiments, the interlayer transition structure further includes a third dielectric layer and a fourth metal layer, wherein the third dielectric layer is disposed in conjunction with the third metal layer, and the fourth metal layer is disposed between the third dielectric layer and the fourth dielectric layer.

[0015] The third dielectric layer is provided with a second signal hole and a second metallized via surrounding the second signal hole. The second signal hole is connected to the second hole disk, and the second signal hole and the second metallized via form a near-coaxial structure.

[0016] The fourth metal layer is provided with a third signal hole and a second metal ground, and a second gap filled with a medium material is provided between the third signal hole and the second metal ground. The third signal hole connects the second signal hole and the fourth signal hole.

[0017] In some embodiments, the interlayer transition structure further includes at least one third dielectric layer and at least one fourth metal layer stacked sequentially, wherein a first third dielectric layer of the at least one third dielectric layer is bonded to the third metal layer and a first fourth metal layer of the at least one fourth metal layer, and the last fourth metal layer of the at least one fourth metal layer is bonded to the fourth dielectric layer.

[0018] The third dielectric layer is provided with a second signal hole and a second metallized via surrounding the second signal hole. The second signal hole is connected to the second hole disk, and the second signal hole and the second metallized via form a near-coaxial structure.

[0019] The fourth metal layer is provided with a third signal hole and a second metal ground, and a second gap filled with a medium material is provided between the third signal hole and the second metal ground. The third signal hole connects the second signal hole and the fourth signal hole.

[0020] In some embodiments, the second dielectric layer further includes a second metallized via surrounding the first signal hole and configured to be grounded.

[0021] In some embodiments, the third metal layer further includes a first metal ground surrounding the second perforated disk, and a first gap filled with a medium material is provided between the second perforated disk and the first metal ground.

[0022] In some embodiments, the fourth dielectric layer is further provided with a fifth metallized via, the fifth metallized via comprising a plurality of vias arranged longitudinally and grounded.

[0023] In some embodiments, the signal transmission line is a microstrip line.

[0024] In some embodiments, the interlayer transition structure further includes a fifth dielectric layer and a sixth metal layer, wherein the fifth dielectric layer is disposed in conjunction with the fifth metal layer and has a sixth metallized via, and the sixth metal layer is disposed in conjunction with the fifth dielectric layer and is grounded.

[0025] In some embodiments, the fifth metal layer is further provided with a third metal ground, which is connected to the sixth metallized via.

[0026] In some embodiments, the signal transmission line is a stripline.

[0027] Compared with the prior art, this utility model has the following advantages and beneficial effects:

[0028] The interlayer transition structure between different layer signal transmission lines and SIW conversion provided by this utility model realizes the interlayer transition between two signal transmission modes applicable to the Ka band from different layer signal transmission lines to the SIW structure. Attached Figure Description

[0029] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly described below. It should be understood that the following drawings only show some embodiments of this application and should not be considered as limiting the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1A This is a schematic diagram of the overall structure of the interlayer transition structure between different layer signal transmission lines and SIW conversion provided in the embodiment of this utility model.

[0031] Figure 1B This is a cross-sectional view of the interlayer transition structure for different layer signal transmission lines and SIW conversion provided in an embodiment of this utility model.

[0032] Figure 2 This is a schematic diagram of the structure of the first metal layer provided in an embodiment of the present invention.

[0033] Figure 3 This is a schematic diagram of the structure of the first dielectric layer provided in an embodiment of the present invention.

[0034] Figure 4 This is a schematic diagram of the structure of the second metal layer provided in an embodiment of the present invention.

[0035] Figure 5 This is a schematic diagram of the structure of the second dielectric layer provided in an embodiment of the present invention.

[0036] Figure 6 This is a schematic diagram of the structure of the third metal layer provided in an embodiment of the present invention.

[0037] Figure 7 This is a schematic diagram of the structure of the third dielectric layer provided in an embodiment of the present invention.

[0038] Figure 8 This is a schematic diagram of the structure of the fourth metal layer provided in an embodiment of the present invention.

[0039] Figure 9 This is a schematic diagram of the structure of the fourth dielectric layer provided in an embodiment of the present invention.

[0040] Figure 10 This is a schematic diagram of the structure of the fifth metal layer provided in an embodiment of the present invention.

[0041] Figure 11 This is a schematic diagram of the structure of the fifth dielectric layer provided in an embodiment of the present invention.

[0042] Figure 12 This is a schematic diagram of the structure of the bottom metal layer provided in an embodiment of the present invention.

[0043] Figure 13 Simulation results of the interlayer transition structure port S11 for signal transmission line and SIW conversion provided in this embodiment of the utility model.

[0044] Figure 14 Simulation results of S21 between the two ports of the interlayer transition structure of the signal plane transmission line and SIW conversion provided in the embodiment of this utility model.

[0045] Marked in the attached diagram:

[0046] 1-First metal layer, 2-First dielectric layer, 2a-First metallized via, 3-Second metal layer, 3a-Gradual balun structure, 3b-First signal transmission line, 3c-First via disk, 4-Second dielectric layer, 4a-Second metallized via, 4b-Matching cavity, 4c-First signal via, 5-Third metal layer, 5a-Second via disk, 6-Third dielectric layer, 6a-Second signal via, 6b-Third metallized via, 7-Fourth metal layer, 7a-Third signal via, 8-Fourth dielectric layer, 8a-Fourth signal via, 8b-Fourth metallized via, 8c-Fifth metallized via, 9-Fifth metal layer, 9a-Second signal transmission line, 9b-Second metal disk, 9c-Matching stub, 10-Fifth dielectric layer, 10a-Sixth metallized via, 11-Sixth metal layer. Detailed Implementation

[0047] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings.

[0048] On the one hand, this application provides an interlayer transition structure for signal transmission lines of different layers and SIW conversion. Figure 1A This is a schematic diagram of the overall structure of the interlayer transition structure between different layer signal transmission lines and SIW conversion provided in an embodiment of this utility model. Figure 1B This is a cross-sectional view of the interlayer transition structure for different layer signal transmission lines and SIW conversion provided in an embodiment of the present invention, showing the structure of each layer and the hole structure in each layer.

[0049] Combination Figures 1A to 12 Each layer of the interlayer transition structure will be described separately. The interlayer transition structure includes at least the following layers stacked in sequence: first metal layer 1, first dielectric layer 2, second metal layer 3, second dielectric layer 4, third metal layer 5, fourth dielectric layer 8, and fifth metal layer 9.

[0050] refer to Figure 2 The first metal layer 1 is a complete metal layer and is set to ground, that is, it has a ground potential.

[0051] refer to Figure 3 A first metallized via 2a is provided in the first dielectric layer 2, and the first metallized via 2a is formed by laser drilling.

[0052] refer to Figure 4The second metal layer 3 is provided with a first via 3c and a gradient balun structure connected to and surrounding the first via 3c, and a first signal transmission line 3b that is first connected to the gradient balun structure 3a and the via 3c. The first metal layer 1, the first dielectric layer 2, the first metallized via 2a, and the gradient balun structure 3a constitute a SIW structure, realizing the transition from stripline or microstrip line to SIW mechanism transmission mode.

[0053] refer to Figure 5 A first signal hole 4c is provided in the second dielectric layer 4, and the first signal hole 4c is connected to the first signal transmission line 3b to realize the transmission of the magnetic field between different layers. In addition, in some embodiments, multiple laser holes are provided around the first signal hole 4c to form a second metallized via 4a. The second metallized via 4a is grounded to form a matching cavity 4b that matches the first signal hole 4c, so as to isolate external magnetic field interference and reduce electromagnetic leakage.

[0054] refer to Figure 6 The third metal layer 5 is provided with a second perforated disk (metal disk) 5a, and the second perforated disk 5a is connected to the first signal hole 4c. Additionally, in some embodiments, the third metal layer 5 is further provided with a first metal ground surrounding the second perforated disk 5a, and a first gap filled with a dielectric material is provided between the second perforated disk 5a and the first metal ground to isolate external magnetic field interference. The second perforated disk is the perforated disk of the lower layer mechanical hole.

[0055] Optionally, in some embodiments, the interlayer transition structure may further include a third dielectric layer 6 and a fourth metal layer 7. The third dielectric layer 7 is disposed in conjunction with the third metal layer 5, and the fourth metal layer 7 is disposed between the third dielectric layer 7 and the fourth dielectric layer 8.

[0056] refer to Figure 7 The third dielectric layer 6 is provided with a second signal hole 6a and a third metallized via 6b surrounding the second signal hole 6a. The second signal hole 6a is connected to the second via 5a, and the second signal hole 6a and the third metallized via 6b form a near-coaxial structure.

[0057] refer to Figure 8 The fourth metal layer 7 is provided with a third signal hole 7a and a second metal ground, and a second gap filled with a medium material is provided between the third signal hole 7a and the second metal ground. The third signal hole 7a connects the second signal hole and the fourth signal hole.

[0058] Optionally, in other embodiments, the interlayer transition structure may further include at least one third dielectric layer 6 and at least one fourth metal layer 7 stacked sequentially, wherein the first third dielectric layer (the side closer to the third metal layer) in the at least one third dielectric layer 6 is attached to the third metal layer, and the first fourth metal layer (the side closer to the fourth dielectric layer) in the at least one fourth metal layer 7 is attached to the fourth dielectric layer 7.

[0059] refer to Figure 7 The third dielectric layer 6 is provided with a second signal hole 6a and a third metallized via 6b surrounding the second signal hole 6a. The second signal hole 6a is connected to the second via 5a, and the second signal hole 6a and the third metallized via 6b form a near-coaxial structure.

[0060] refer to Figure 8 The fourth metal layer 7 is provided with a third signal hole 7a and a second metal ground, and a second gap filled with a medium material is provided between the third signal hole 7 and the second metal ground. The third signal hole 7 connects the second signal hole 6a and the fourth signal hole 8a.

[0061] At least one third dielectric layer and at least one fourth metal layer are signal connected to each other through corresponding signal holes.

[0062] refer to Figure 9 The fourth dielectric layer 8 is provided with a fourth signal via 8a and a fourth metallized via 8b, and the fourth metallized via 8b surrounds the fourth signal via 8a to form a near-coaxial structure with the fourth signal via 8a. In some embodiments, the fourth dielectric layer 8 is also provided with a fifth metallized via 8c. Figure 9 As shown, the fifth metallized via 8c includes longitudinally arranged laser holes. The laser holes are connected to the underlying metal ground to realize the ground connection of the lower stripline, which can effectively reduce electromagnetic leakage.

[0063] refer to Figure 10 The fifth metal layer 9 is provided with a second signal transmission line 9a and a second metal disk 9b. The second signal transmission line 9a is connected to a fourth signal hole 8a through the second metal disk 9b, and transmits the received signal to other layers through the fourth signal hole 8a. For example... Figure 10 As shown, a matching stub is also provided on the second signal transmission line 9a, which is used to adjust impedance matching.

[0064] The interlayer transition structure described above is suitable for microstrip lines. For striplines, a fifth dielectric layer 10 and a sixth metal layer 11 can be added to the above interlayer transition structure. The fifth dielectric layer is bonded to the sixth metal layer, and the sixth metal layer is bonded to the fifth dielectric layer. The fifth dielectric layer has a sixth metallized via 10a, and the sixth metal layer is grounded.

[0065] refer to Figure 11 The fifth dielectric layer 10 is provided with a sixth metallized via 10a, which is connected to the second metal ground of the fifth metal layer 9.

[0066] refer to Figure 12 The sixth metal layer 11 is the bottom metal layer and is grounded.

[0067] In summary, the interlayer transition structure for signal transmission lines and SIW conversion provided by this utility model includes at least the following layers stacked sequentially: a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer, a third metal layer, a fourth dielectric layer, and a fifth metal layer. The signal transmission lines in the fifth metal layer transmit the received signals to the SIW structure sequentially through each layer, realizing the transition from microstrip / stripline to SIW structure transmission mode. This efficiently achieves the interlayer transition between the two transmission methods. Furthermore, the structure of metal layers sandwiching dielectric layers is suitable for multilayer PCB design and fabrication.

[0068] The following simulations are performed on the SIW's port S11 (input reflection coefficient) and the S21 (forward transmission coefficient) between the two ports, and the results are as follows: Figure 13 and Figure 14 As shown. Figure 13 As shown, for different setting parameters, this structure achieves ultra-wideband matching with S11 ≤ -10dB in the frequency range of 22.6~39GHz. Figure 14 As shown, within the frequency range of 23–38 GHz, S21 < -1 dB, enabling ultra-wideband low-loss transmission of signals in the Ka band (a part of the microwave band of the electromagnetic spectrum; the frequency range of the Ka band is 26.5–40 GHz, also known as the 30 / 20 GHz band, and is commonly used for satellite communications).

[0069] In summary, the interlayer transition structure between different layer signal transmission lines and SIW conversion provided in this embodiment can be used for broadband conversion structures in the Ka-band, efficiently realizing the interlayer transition between two transmission forms. It is suitable for multilayer PCB design and fabrication.

[0070] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of this utility model. It should be understood that the above description is only a specific embodiment of this utility model and is not intended to limit the scope of protection of this utility model. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the scope of protection of this utility model.

Claims

1. An interlayer transition structure for signal transmission lines of different layers and SIW conversion, characterized in that, The interlayer transition structure comprises sequentially stacked structures: A first metal layer, wherein the first metal layer is grounded; A first dielectric layer, wherein a first metallized via is provided in the first dielectric layer; The second metal layer is provided with a first via and a gradient balun structure connected to and surrounding the first via, a first signal transmission line connected to the gradient balun structure and the first via, and the first metal layer, the first dielectric layer, the first metallized via, and the gradient balun structure constitute a substrate integrated waveguide (SIW) structure. A second dielectric layer is provided therein, wherein a first signal hole is provided in the second dielectric layer, and the first signal hole is connected to the first signal transmission line; A third metal layer, wherein the third metal layer is provided with a second hole disk, and the second hole disk is connected to the first signal hole; A fourth dielectric layer, wherein the fourth dielectric layer is provided with a fourth signal hole and a fourth metallized via, and the fourth metallized via surrounds the fourth signal hole to form a near-coaxial structure with the fourth signal hole; The fifth metal layer is provided with a second signal transmission line and a second metal disk, wherein the second signal transmission line is connected to the fourth signal hole through the second metal disk.

2. The interlayer transition structure according to claim 1, characterized in that, The interlayer transition structure further includes a third dielectric layer and a fourth metal layer, wherein the third dielectric layer is disposed in conjunction with the third metal layer, and the fourth metal layer is disposed between the third dielectric layer and the fourth dielectric layer. The third dielectric layer is provided with a second signal hole and a second metallized via surrounding the second signal hole. The second signal hole is connected to the second hole disk, and the second signal hole and the second metallized via form a near-coaxial structure. The fourth metal layer is provided with a third signal hole and a second metal ground, and a second gap filled with a medium material is provided between the third signal hole and the second metal ground. The third signal hole connects the second signal hole and the fourth signal hole.

3. The interlayer transition structure according to claim 1, characterized in that, The interlayer transition structure further includes at least one third dielectric layer and at least one fourth metal layer stacked sequentially, wherein a first third dielectric layer of the at least one third dielectric layer is bonded to the third metal layer and a first fourth metal layer of the at least one fourth metal layer, and the last fourth metal layer of the at least one fourth metal layer is bonded to the fourth dielectric layer. The third dielectric layer is provided with a second signal hole and a second metallized via surrounding the second signal hole. The second signal hole is connected to the second hole disk, and the second signal hole and the second metallized via form a near-coaxial structure. The fourth metal layer is provided with a third signal hole and a second metal ground, and a second gap filled with a medium material is provided between the third signal hole and the second metal ground. The third signal hole connects the second signal hole and the fourth signal hole.

4. The interlayer transition structure according to claim 1, characterized in that, The second dielectric layer also includes a second metallized via surrounding the first signal hole and configured to be grounded.

5. The interlayer transition structure according to claim 1, characterized in that, The third metal layer also includes a first metal ground surrounding the second perforated plate, and a first gap filled with a medium material is provided between the second perforated plate and the first metal ground.

6. The interlayer transition structure according to claim 1, characterized in that, The fourth dielectric layer is further provided with a fifth metallized via, which includes a plurality of vias arranged longitudinally and grounded.

7. The interlayer transition structure according to any one of claims 1 to 6, characterized in that, The signal transmission line is a microstrip line.

8. The interlayer transition structure according to any one of claims 1 to 6, characterized in that, The interlayer transition structure further includes a fifth dielectric layer and a sixth metal layer, wherein the fifth dielectric layer is disposed in conjunction with the fifth metal layer and has a sixth metallized via, and the sixth metal layer is disposed in conjunction with the fifth dielectric layer and is grounded.

9. The interlayer transition structure according to claim 8, characterized in that, The fifth metal layer is further provided with a third metal ground, which is connected to the sixth metallized via.

10. The interlayer transition structure according to claim 9, characterized in that, The signal transmission line is a stripline.

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