A power chip with cellular temperature detection function

Abstract

This application provides a power chip with cell temperature detection capability, utilizing a Schottky diode formed by direct contact between a metal and polysilicon with a low doping concentration. When current flows through the active region of the device, heat is generated, and the lattice conducts the heat to the Schottky junction within the trench, causing a change in the barrier height of the Schottky diode and thus altering its forward voltage drop. The real-time temperature inside the active region of the device during operation can be calculated. The trench oxide layer serves as isolation for temperature detection, ensuring that the overall and local junction temperature detection is unaffected by the switching power supply circuit.

Description

Technical Field

[0001] The embodiments of this application belong to the field of semiconductor technology, and in particular relate to power chips with cell temperature detection function. Background Technology

[0002] In switching power supply applications, it is often necessary to detect and control the temperature of power chips. Traditional temperature detection is limited to power detection or placing a diode temperature sensor near the power chip. However, the above methods cannot detect the local temperature of the device. Summary of the Invention

[0003] To address or mitigate the problems in the prior art, this application provides a power chip with cell temperature detection function. The chip includes multiple Schottky diodes, which are spaced apart in the active region of the chip. The chip includes a chip body.

[0004] The chip body includes at least one trench;

[0005] An oxide layer is provided on the sidewall of the trench;

[0006] The trench contains a first polycrystalline silicon and a second polycrystalline silicon from top to bottom;

[0007] The trench is provided with a contact hole that extends into the second polysilicon. The contact hole is filled with metal, and a Schottky diode is formed by contacting the metal with the second polysilicon.

[0008] In a preferred embodiment of this application, the doping concentration of the first polysilicon is greater than the doping concentration of the second polysilicon.

[0009] In a preferred embodiment of this application, the chip body is a power chip.

[0010] Compared with existing technologies, this application provides a power chip with cell temperature detection function, which utilizes a metal and a low-doped polysilicon directly in contact to form a Schottky diode. When current flows through the active region of the device, heat is generated, and the lattice conducts the heat to the Schottky junction in the trench, causing a change in the barrier height of the Schottky diode itself, thereby changing its forward voltage drop. The real-time temperature inside the active region of the device during operation can be obtained through calculation. The trench oxide layer is used as an isolation layer to detect the device temperature, ensuring that the overall and local junction temperature detection of the device is not affected by the switching power supply circuit. Attached Figure Description

[0011] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. Some specific embodiments of this application will be described in detail below with reference to the accompanying drawings in an exemplary and non-limiting manner. The same reference numerals in the drawings designate the same or similar parts or components. Those skilled in the art should understand that these drawings are not necessarily drawn to scale. In the drawings:

[0012] Figure 1 This is a schematic diagram of a power chip structure with cell temperature detection function according to an embodiment of this application. Detailed Implementation

[0013] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are merely some, not all, of the embodiments of the present application. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative effort should fall within the scope of protection of the present application.

[0014] like Figure 1 As shown, this application provides a power chip with cell temperature detection function. The chip includes a plurality of Schottky diodes, which are spaced apart in the active region of the chip.

[0015] The chip includes a chip body 1;

[0016] The chip body 1 includes at least one trench 2;

[0017] An oxide layer 5 is provided on the sidewall of the trench 2;

[0018] The trench 2 is provided with a first polycrystalline silicon 3 and a second polycrystalline silicon 4 from top to bottom;

[0019] The trench 2 is provided with a contact hole 6, which extends into the second polysilicon 4. The contact hole 6 is filled with metal, and a Schottky diode is formed directly with the second polysilicon 4 through the metal.

[0020] In a preferred embodiment of this application, the doping concentration of the first polysilicon 3 is greater than the doping concentration of the second polysilicon 4.

[0021] In a preferred embodiment of this application, the chip body 1 is a power chip.

[0022] The power chip 1 can be any power chip with a trench structure, including MOSFETs, IGBTs, etc.

[0023] This application provides a method for fabricating a power chip with cellular temperature detection capabilities. A Schottky diode is formed by direct contact between a metal and low-doped polysilicon. When current flows through the active region of the device, heat is generated. The lattice conducts this heat to the Schottky junction within the trench, causing a change in the barrier height of the Schottky diode and thus altering its forward voltage drop. The real-time temperature inside the active region of the device during operation can be calculated. Using the trench oxide layer as isolation for temperature detection ensures that the overall and local junction temperature detection is unaffected by the switching power supply circuit.

[0024] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A power chip with cellular temperature detection function, characterized in that, The chip includes a plurality of Schottky diodes, which are spaced apart in the active region of the chip. The chip includes a chip body. The chip body includes at least one trench; An oxide layer is provided on the sidewall of the trench; The trench contains a first polycrystalline silicon and a second polycrystalline silicon from top to bottom; The trench is provided with a contact hole that extends into the second polysilicon. The contact hole is filled with metal, and a Schottky diode is formed by contacting the metal with the second polysilicon.

2. The power chip with cell temperature detection function as described in claim 1, characterized in that, The chip itself is a power chip.

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