Semiconductor light emitting source

Abstract

The utility model discloses a semiconductor light emitting source, include: semiconductor light emitting chip, semiconductor light emitting chip includes substrate, sets up on substrate semiconductor light emitting laminated, sets up on semiconductor light emitting laminated pad assembly, insulating layer, the side of semiconductor light emitting chip is surrounded, and light -proof layer is set up on the light emitting surface of semiconductor light emitting chip according to predetermined shape, makes the light emitting surface of semiconductor light emitting chip according to predetermined area and emits light. The utility model discloses through setting up light -proof layer on the light emitting surface of semiconductor light emitting chip, makes semiconductor light emitting chip emit light according to predetermined area, satisfies the demand of different light emitting shape, reduces or avoids the halo effect that light causes because of horizontal diffusion, guarantees the condensing performance of light source.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor light-emitting technology, and in particular to a semiconductor light-emitting source. Background Technology

[0002] With improved luminous efficiency and reduced manufacturing costs, semiconductor light-emitting devices (LEDs) have been widely used in backlighting, displays, and lighting. These devices include various types such as LEDs, COBs, modules, LED panels, and LED strips. One existing semiconductor light source structure is as follows: Figure 1 As shown, it includes a semiconductor light-emitting chip 11, an insulating layer 12, and a phosphor layer 13. The semiconductor light-emitting chip 11 is provided with a first pad 14 and a second pad 15 that are electrically connected to the outside. When the semiconductor light source is directly soldered to the circuit board, the first pad 14 and the second pad 15 of the semiconductor light-emitting chip 11 are electrically connected to the corresponding pads on the circuit board.

[0003] The light emitted by the semiconductor light-emitting chip 11 passes through the phosphor layer 13 and is emitted outward. Some of the light diffuses horizontally in all directions within the phosphor layer 13, forming a halo effect that affects the light-gathering performance of the light source. At the same time, the shape of the light-emitting surface of the semiconductor light-emitting light source cannot be changed according to the requirements. Utility Model Content

[0004] The technical problem to be solved by this invention is to provide an improved semiconductor light source.

[0005] The technical solution adopted by this utility model to solve its technical problem is: to provide a semiconductor light-emitting light source, comprising:

[0006] A semiconductor light-emitting chip, the semiconductor light-emitting chip comprising a substrate, a semiconductor light-emitting stack disposed on the substrate, and a pad assembly disposed on the semiconductor light-emitting stack;

[0007] An insulating layer is disposed on the side of the semiconductor light-emitting chip; and

[0008] A light-shielding layer is disposed on the light-emitting surface of the semiconductor light-emitting chip in a predetermined shape, so that the light-emitting surface of the semiconductor light-emitting chip emits light in a predetermined area.

[0009] Preferably, the light-shielding layer also extends to part or all of the insulating layer.

[0010] Preferably, the shape of the light-shielding layer is one or more combinations of lines, frames, grids, patterns, letters, and symbols.

[0011] Preferably, the semiconductor light-emitting chip further includes thermally conductive pads disposed on the semiconductor light-emitting stack; the thermally conductive pads and the pad assembly are insulated from each other.

[0012] Preferably, the semiconductor light source further includes a reflective layer; the reflective layer is disposed between the insulating layer and the side surface of the semiconductor light-emitting chip. The semiconductor light source also includes a light-transmitting layer;

[0013] The light-transmitting layer fills the hollowed-out areas of the light-shielding layer; or...

[0014] The light-transmitting layer is disposed between the light-emitting surface of the semiconductor light-emitting chip and the light-shielding layer.

[0015] Preferably, the light-transmitting layer includes a light-receiving end face and a light-emitting curved surface facing away from each other; the light-receiving end face of the light-transmitting layer faces the semiconductor light-emitting chip, so that the semiconductor light-emitting chip is located within the light-receiving end face of the light-transmitting layer.

[0016] Preferably, the light-receiving end face of the light-transmitting layer is provided with an outwardly extending skirt edge, which is embedded in the light-shielding layer.

[0017] Preferably, the semiconductor light source further includes a first light-transmitting layer and a second light-transmitting layer;

[0018] The first light-transmitting layer is disposed between the light-emitting surface of the semiconductor light-emitting chip and the light-shielding layer, and the second light-transmitting layer fills the hollowed-out positions of the light-shielding layer.

[0019] The beneficial effects of this utility model are: by setting a light-shielding layer on the light-emitting surface of the semiconductor light-emitting chip, the semiconductor light-emitting chip emits light according to a predetermined area, which meets the needs of different light-emitting shapes, reduces or avoids the halo effect caused by horizontal diffusion of light, and ensures the focusing performance of the light source. Attached Figure Description

[0020] The present invention will be further described below with reference to the accompanying drawings and embodiments. In the accompanying drawings:

[0021] Figure 1 This is a schematic diagram of the structure of a semiconductor light-emitting source in the prior art;

[0022] Figure 2 This is a schematic diagram of the structure of the semiconductor light-emitting light source according to the first embodiment of this utility model;

[0023] Figure 3 This is a schematic diagram of the structure of the semiconductor light-emitting light source according to the second embodiment of this utility model;

[0024] Figure 4 This is a schematic diagram of the structure of the semiconductor light-emitting source according to the third embodiment of the present invention;

[0025] Figure 5 This is a schematic diagram of the structure of the semiconductor light-emitting light source according to the fourth embodiment of this utility model;

[0026] Figure 6 This is a schematic diagram of the structure of the semiconductor light source according to the fifth embodiment of this utility model. Detailed Implementation

[0027] To provide a clearer understanding of the technical features, objectives, and effects of this utility model, the specific embodiments of this utility model will now be described in detail with reference to the accompanying drawings.

[0028] like Figure 2 As shown, the semiconductor light source of the first embodiment of the present invention includes a semiconductor light-emitting chip 20, an insulating layer 30, and a light-shielding layer 40.

[0029] The semiconductor light-emitting chip 20 has two opposing surfaces and a side surface surrounding the two surfaces, one of which is the light-emitting surface of the semiconductor light-emitting chip 20. An insulating layer 30 is disposed on the side surface of the semiconductor light-emitting chip 20, and a light-shielding layer 40 is disposed on the light-emitting surface of the semiconductor light-emitting chip 20. The light-shielding layer 40 is arranged in a predetermined shape so that the light-emitting surface of the semiconductor light-emitting chip 20 emits light in a predetermined area.

[0030] The semiconductor light-emitting chip 20 includes a substrate 21, a semiconductor light-emitting stack 22 disposed on the substrate 21, thermally conductive pads 23 disposed on the semiconductor light-emitting stack 22, and pad assemblies.

[0031] The substrate 21 has a first surface and a second surface facing away from each other. A semiconductor light-emitting stack 22 is disposed on the second surface of the substrate 21, and the first surface of the substrate 21 forms the light-emitting surface of the semiconductor light-emitting stack 22, which is also the light-emitting surface of the semiconductor light-emitting chip 20. Thermal pads 23 and pad assemblies are both disposed on the surface of the semiconductor light-emitting stack 22 facing away from the substrate 21.

[0032] The pad assembly further includes a first pad 24 and a second pad 25, which are respectively positioned to correspond to the positive and negative electrodes. The thermally conductive pad 23 is insulated from the pad assembly. When the semiconductor light source is used, it is mounted on a substrate (such as a metal substrate). The thermally conductive pad 23 is used to directly conduct heat to the substrate, which can promptly conduct the heat generated by the semiconductor light-emitting chip 20 to the substrate when operating at high power, thereby increasing the maximum working power of the semiconductor light-emitting chip 20.

[0033] Alternatively, on the surface of the semiconductor light-emitting stack 22, the thermally conductive pad 23 is located between the first pad 24 and the second pad 25, and is spaced apart from the first pad 24 and the second pad 25, respectively. Alternatively, the first pad 24 and the second pad 25 can be located on the same side, and the thermally conductive pad 23 can be located on the other side (not shown in the figure).

[0034] An insulating layer 30 is disposed around the side of the semiconductor light-emitting chip 20, which not only protects the side of the semiconductor light-emitting chip 20, but also effectively reduces light scattering caused by side light emission. The insulating layer 30 may be made of, but is not limited to, white glue or black glue.

[0035] The insulating layer 30 can also protrude from the surface of the semiconductor light-emitting stack 22 facing away from the substrate 21, and can wrap the sides of the pad assembly disposed on the surface.

[0036] A light-shielding layer 40 is disposed on the light-emitting surface of the semiconductor light-emitting chip 20, specifically on the first surface of the substrate 21. The predetermined shape of the light-shielding layer 40 can be one or more combinations of lines, frames, grids, patterns, letters, and symbols, so that the semiconductor light-emitting chip 20 emits light according to the hollowed-out portions in the predetermined shape of the light-shielding layer 40, forming a corresponding pattern.

[0037] When the predetermined shape of the light-shielding layer 40 is a hollow shape corresponding to a letter, character or symbol, the semiconductor light-emitting chip 20 emits light according to the hollow shape to form a corresponding letter, character or symbol light-emitting pattern.

[0038] If necessary, the light-shielding layer 40 may extend from the first surface of the substrate 21 to the surface of the insulating layer 30, covering part or all of the insulating layer 30.

[0039] The light-shielding layer 40 is formed of opaque or semi-transparent metallic, inorganic, or organic materials.

[0040] like Figure 3 As shown, the semiconductor light source of the second embodiment of the present invention includes a semiconductor light-emitting chip 20, an insulating layer 30, a light-shielding layer 40, and a light-transmitting layer 50.

[0041] The semiconductor light-emitting chip 20 has two opposing surfaces and a side surface surrounding the two surfaces, one of which is the light-emitting surface of the semiconductor light-emitting chip 20. An insulating layer 30 is disposed on the side surface of the semiconductor light-emitting chip 20, and a light-shielding layer 40 is disposed on the light-emitting surface of the semiconductor light-emitting chip 20. The light-shielding layer 40 is arranged in a predetermined shape so that the light-emitting surface of the semiconductor light-emitting chip 20 emits light in a predetermined area. A light-transmitting layer 50 fills the cutouts in the light-shielding layer 40 and covers the areas of the light-emitting surface of the semiconductor light-emitting chip 20 that are not covered by the light-shielding layer 40.

[0042] The semiconductor light-emitting chip 20 includes a substrate 21, a semiconductor light-emitting stack 22 disposed on the substrate 21, thermally conductive pads 23 disposed on the semiconductor light-emitting stack 22, and pad assemblies. The substrate 21 has a first surface and a second surface facing away from each other. The semiconductor light-emitting stack 22 is disposed on the second surface of the substrate 21, and the first surface of the substrate 21 forms the light-emitting surface of the semiconductor light-emitting stack 22, which is also the light-emitting surface of the semiconductor light-emitting chip 20. The thermally conductive pads 23 and the pad assemblies are both disposed on the surface of the semiconductor light-emitting stack 22 facing away from the substrate 21.

[0043] The pad assembly further includes a first pad 24 and a second pad 25, which are respectively positioned to correspond to the positive and negative electrodes. The thermally conductive pad 23 is insulated from the pad assembly. When the semiconductor light source is used, it is mounted on a substrate (such as a metal substrate). The thermally conductive pad 23 is used to directly conduct heat to the substrate, which can promptly conduct the heat generated by the semiconductor light-emitting chip 20 to the substrate when operating at high power, thereby increasing the maximum working power of the semiconductor light-emitting chip 20.

[0044] Alternatively, on the surface of the semiconductor light-emitting stack 22, the thermally conductive pad 23 is located between the first pad 24 and the second pad 25, and is spaced apart from the first pad 24 and the second pad 25, respectively. Alternatively, the first pad 24 and the second pad 25 can be located on the same side, and the thermally conductive pad 23 can be located on the other side (not shown in the figure).

[0045] An insulating layer 30 is disposed around the side of the semiconductor light-emitting chip 20, which not only protects the side of the semiconductor light-emitting chip 20, but also effectively reduces light scattering caused by side light emission. The insulating layer 30 may be made of, but is not limited to, white glue or black glue. The insulating layer 30 may also protrude from the surface of the semiconductor light-emitting stack 22 facing away from the substrate 21, and can cover the side of the pad assembly disposed on the surface.

[0046] The light-shielding layer 40 is disposed on the light-emitting surface of the semiconductor light-emitting chip 20, specifically on the first surface of the substrate 21. The specific configuration of the light-shielding layer 40 can be referred to the light-shielding layer 40 in the first embodiment described above.

[0047] Compared to the first embodiment described above, this embodiment further includes a light-transmitting layer 50. The light-transmitting layer 50 fills the hollowed-out positions of the light-shielding layer 40 and can form an integral structural layer covering the light-emitting surface of the semiconductor light-emitting chip 20. The light-transmitting layer 50 not only transmits light but also protects the light-emitting surface of the semiconductor light-emitting chip 20.

[0048] The light-transmitting layer 50 can be formed of glass, transparent or translucent ceramics, silicone, or epoxy resin. The glass can be transparent glass or fluorescent glass, and the ceramic can be fluorescent ceramic.

[0049] The light-transmitting layer 50 may further be doped with at least one photoluminescent powder. When the semiconductor light-emitting chip 20 emits light, it excites the photoluminescent powder to produce a new color of light. Different photoluminescent powders may be doped in the light-transmitting layer 50 at different locations to emit different colors of light.

[0050] like Figure 4 As shown, the semiconductor light source of the third embodiment of the present invention includes a semiconductor light-emitting chip 20, an insulating layer 30, a light-shielding layer 40, and a light-transmitting layer 50.

[0051] The semiconductor light-emitting chip 20 has two opposing surfaces and a side surface surrounding the two surfaces, one of which is the light-emitting surface of the semiconductor light-emitting chip 20. An insulating layer 30 is disposed around the side surface of the semiconductor light-emitting chip 20, a light-shielding layer 40 is disposed on the light-emitting surface of the semiconductor light-emitting chip 20, and a light-transmitting layer 50 is disposed between the light-emitting surface of the semiconductor light-emitting chip 20 and the light-shielding layer 40. The light-shielding layer 40 sits on the light-transmitting layer 50, and together with the light-transmitting layer 50, enables the light-emitting surface of the semiconductor light-emitting chip 20 to emit light according to a predetermined area.

[0052] The semiconductor light-emitting chip 20 includes a substrate 21, a semiconductor light-emitting stack 22 disposed on the substrate 21, thermally conductive pads 23 disposed on the semiconductor light-emitting stack 22, and pad assemblies. The substrate 21 has a first surface and a second surface facing away from each other. The semiconductor light-emitting stack 22 is disposed on the second surface of the substrate 21, and the first surface of the substrate 21 forms the light-emitting surface of the semiconductor light-emitting stack 22, which is also the light-emitting surface of the semiconductor light-emitting chip 20. The thermally conductive pads 23 and the pad assemblies are both disposed on the surface of the semiconductor light-emitting stack 22 facing away from the substrate 21.

[0053] The pad assembly further includes a first pad 24 and a second pad 25, which are respectively positioned to correspond to the positive and negative electrodes. The thermally conductive pad 23 is insulated from the pad assembly. When the semiconductor light source is used, it is mounted on a substrate (such as a metal substrate). The thermally conductive pad 23 is used to directly conduct heat to the substrate, which can promptly conduct the heat generated by the semiconductor light-emitting chip 20 to the substrate when operating at high power, thereby increasing the maximum working power of the semiconductor light-emitting chip 20.

[0054] Alternatively, on the surface of the semiconductor light-emitting stack 22, the thermally conductive pad 23 is located between the first pad 24 and the second pad 25, and is spaced apart from the first pad 24 and the second pad 25, respectively. Alternatively, the first pad 24 and the second pad 25 can be located on the same side, and the thermally conductive pad 23 can be located on the other side (not shown in the figure).

[0055] An insulating layer 30 is disposed around the side of the semiconductor light-emitting chip 20, which not only protects the side of the semiconductor light-emitting chip 20, but also effectively reduces light scattering caused by side light emission. The insulating layer 30 may be made of, but is not limited to, white glue or black glue.

[0056] The insulating layer 30 can also protrude from the surface of the semiconductor light-emitting stack 22 facing away from the substrate 21, and can wrap the sides of the pad assembly disposed on the surface.

[0057] The light-transmitting layer 50 is disposed on the light-emitting surface of the semiconductor light-emitting chip 20, specifically on the first surface of the substrate 21. It not only transmits light but also protects the light-emitting surface of the semiconductor light-emitting chip 20.

[0058] The light-transmitting layer 50 can be formed of glass, transparent or translucent ceramics, silicone, or epoxy resin. The glass can be transparent glass or fluorescent glass, and the ceramic can be fluorescent ceramic.

[0059] The light-transmitting layer 50 may further be doped with at least one photoluminescent powder. When the semiconductor light-emitting chip 20 emits light, it excites the photoluminescent powder to produce a new color of light. Different photoluminescent powders may be doped in the light-transmitting layer 50 at different locations to emit different colors of light.

[0060] A light-shielding layer 40 is disposed on the light-transmitting layer 50 and can be configured in a predetermined shape, as can be seen in the light-shielding layer 40 of the first embodiment described above. The light-shielding layer 40 is formed of opaque or semi-transparent metallic, inorganic, or organic materials.

[0061] If necessary, the light-shielding layer 40 can also extend to cover the side of the light-transmitting layer 50 and connect with the insulating layer 30 to reduce the halo effect caused by light passing through the side of the light-transmitting layer 50.

[0062] like Figure 5 As shown, the semiconductor light source of the fourth embodiment of the present invention includes a semiconductor light-emitting chip 20, an insulating layer 30, a light-shielding layer 40, and a light-transmitting layer 50.

[0063] The semiconductor light-emitting chip 20 has two opposing surfaces and a side surface surrounding the two surfaces, one of which is the light-emitting surface of the semiconductor light-emitting chip 20. An insulating layer 30 is disposed around the side surface of the semiconductor light-emitting chip 20. The light-shielding layer 40 and the light-transmitting layer 50 can be configured with reference to the second or third embodiment described above.

[0064] Unlike the second and third embodiments described above, the light-transmitting layer 50 in this embodiment includes a light-receiving end face 51 and a light-emitting curved surface 52 facing away from each other. The light-receiving end face 51 of the light-transmitting layer 50 faces the semiconductor light-emitting chip 20, so that the semiconductor light-emitting chip 20 is located within the light-receiving end face 51 of the light-transmitting layer 50.

[0065] Light emitted from the semiconductor light-emitting chip 20 enters the light-receiving end face 51 of the light-transmitting layer 50, passes through the light-transmitting layer 50, and exits from the light-emitting curved surface 52 of the light-transmitting layer 50. The light-emitting curved surface 52 of the light-transmitting layer 50 is usually a convex arc surface, such as a sphere; by setting light-emitting curved surfaces 52 with different curvatures and radii, the emission angle of the light passing through the light-transmitting layer 50 can be changed, i.e., the emission angle.

[0066] The light-receiving end face 51 of the light-transmitting layer 50 can be a flat surface or a concave curved surface. By selecting the concave curved surface, it can be matched with the light-emitting curved surface to further adjust the light emission angle and light-receiving efficiency.

[0067] Alternatively, the light-receiving end face 51 of the light-transmitting layer 50 may also be provided with an outwardly extending skirt, which is embedded in the light-shielding layer 40 to improve the connection stability between the light-transmitting layer 50 and the light-shielding layer 40.

[0068] like Figure 6 As shown, the semiconductor light source of the fifth embodiment of this utility model includes a semiconductor light-emitting chip 20, an insulating layer 30, a light-shielding layer 40, a first light-transmitting layer 61, and a second light-transmitting layer 62.

[0069] The semiconductor light-emitting chip 20 has two opposing surfaces and a side surface surrounding the two surfaces, one of which is the light-emitting surface of the semiconductor light-emitting chip 20. An insulating layer 30 surrounds the side surface of the semiconductor light-emitting chip 20, a light-shielding layer 40 is disposed on the light-emitting surface of the semiconductor light-emitting chip 20, a first light-transmitting layer 61 is disposed between the light-emitting surface of the semiconductor light-emitting chip 20 and the light-shielding layer 40, and a second light-transmitting layer 62 fills the hollowed-out positions of the light-shielding layer 40. The light-shielding layer 40 is arranged in a predetermined shape, enabling the light-emitting surface of the semiconductor light-emitting chip 20 to emit light according to a predetermined area.

[0070] The semiconductor light-emitting chip 20 includes a substrate 21, a semiconductor light-emitting stack 22 disposed on the substrate 21, thermally conductive pads 23 disposed on the semiconductor light-emitting stack 22, and pad assemblies. The substrate 21 has a first surface and a second surface facing away from each other. The semiconductor light-emitting stack 22 is disposed on the second surface of the substrate 21, and the first surface of the substrate 21 forms the light-emitting surface of the semiconductor light-emitting stack 22, which is also the light-emitting surface of the semiconductor light-emitting chip 20. The thermally conductive pads 23 and the pad assemblies are both disposed on the surface of the semiconductor light-emitting stack 22 facing away from the substrate 21.

[0071] The pad assembly further includes a first pad 24 and a second pad 25, which are respectively positioned to correspond to the positive and negative electrodes. The thermally conductive pad 23 is insulated from the pad assembly. When the semiconductor light source is used, it is mounted on a substrate (such as a metal substrate). The thermally conductive pad 23 is used to directly conduct heat to the substrate, which can promptly conduct the heat generated by the semiconductor light-emitting chip 20 to the substrate when operating at high power, thereby increasing the maximum working power of the semiconductor light-emitting chip 20.

[0072] Alternatively, on the surface of the semiconductor light-emitting stack 22, the thermally conductive pad 23 is located between the first pad 24 and the second pad 25, and is spaced apart from the first pad 24 and the second pad 25, respectively. Alternatively, the first pad 24 and the second pad 25 can be located on the same side, and the thermally conductive pad 23 can be located on the other side (not shown in the figure).

[0073] An insulating layer 30 is disposed around the side of the semiconductor light-emitting chip 20, which not only protects the side of the semiconductor light-emitting chip 20, but also effectively reduces light scattering caused by side light emission. The insulating layer 30 may be made of, but is not limited to, white glue or black glue.

[0074] The insulating layer 30 can also protrude from the surface of the semiconductor light-emitting stack 22 facing away from the substrate 21, and can wrap the sides of the pad assembly disposed on the surface.

[0075] The first light-transmitting layer 61 is disposed on the light-emitting surface of the semiconductor light-emitting chip 20, specifically on the first surface of the substrate 21. It not only transmits light but also protects the light-emitting surface of the semiconductor light-emitting chip 20.

[0076] A light-shielding layer 40 is disposed on the first light-transmitting layer 61 and can be disposed in a predetermined shape, as can be seen in the light-shielding layer 40 of the first embodiment described above. The light-shielding layer 40 is formed of opaque or semi-transparent metallic, inorganic, or organic materials.

[0077] If necessary, the light-shielding layer 40 can also extend to cover the side of the first light-transmitting layer 61 and connect with the insulating layer 30 to reduce the halo effect caused by light passing through the side of the first light-transmitting layer 61.

[0078] The second light-transmitting layer 62 fills the hollowed-out positions of the light-shielding layer 40, and can form an integral structural layer with the light-shielding layer 40 covering the light-emitting surface of the semiconductor light-emitting chip 20. The second light-transmitting layer 62 not only plays a role in light transmission, but also a protective role.

[0079] The first light-transmitting layer 61 and the second light-transmitting layer 62 can each be formed of glass, transparent or translucent ceramics, silicone, or epoxy resin, etc. The glass can be transparent glass or fluorescent glass, and the ceramic can be fluorescent ceramic. The first light-transmitting layer 61 and the second light-transmitting layer 62 can also be doped with at least one photoluminescent powder. When the semiconductor light-emitting chip 20 emits light, the photoluminescent powder is excited to produce a new color of light. Different photoluminescent powders can be doped into the first light-transmitting layer 61 / second light-transmitting layer 62 at different locations to emit different colors of light.

[0080] In this fifth embodiment, the second light-transmitting layer 62 may further include a light-receiving end face 51 and a light-emitting curved surface 52 facing away from each other. For details, please refer to the setting of the light-transmitting layer 50 in the fourth embodiment, which will not be described again here.

[0081] Furthermore, the semiconductor light source in each of the above embodiments may also include a reflective layer, which is disposed between the insulating layer 30 and the side of the semiconductor light-emitting chip 20. The reflective layer can reflect light incident on the insulating layer 30, reducing light loss caused by light absorption by the insulating layer 30 and effectively improving luminous efficiency.

[0082] The semiconductor light source of this invention is used directly in surface mount technology (SMT), that is, the side of the semiconductor light-emitting chip 20 with the thermally conductive pads 23 is directly attached to the substrate, and the first pad 24 and the second pad 25 are electrically connected to the corresponding pads on the substrate. During operation, the light emitted by the semiconductor light-emitting chip 20 is partially blocked by the light-shielding layer 40, forming the desired shape / pattern of the light-emitting pattern; the heat generated by the semiconductor light-emitting chip 20 can be promptly conducted to the substrate, which is beneficial for the semiconductor light-emitting chip 20 to operate at high power and increases the maximum working power of the semiconductor light-emitting chip 20.

[0083] The semiconductor light source of this invention has a simple structure, which can simplify the manufacturing process and reduce costs.

[0084] The above description is merely an embodiment of this utility model and does not limit the patent scope of this utility model. Any equivalent structural or procedural transformations made based on the description and drawings of this utility model, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this utility model.

Claims

1. A semiconductor light source, characterized in that, include: A semiconductor light-emitting chip, the semiconductor light-emitting chip comprising a substrate, a semiconductor light-emitting stack disposed on the substrate, and a pad assembly disposed on the semiconductor light-emitting stack; An insulating layer is disposed on the side of the semiconductor light-emitting chip; as well as A light-shielding layer is disposed on the light-emitting surface of the semiconductor light-emitting chip in a predetermined shape, so that the light-emitting surface of the semiconductor light-emitting chip emits light in a predetermined area.

2. The semiconductor light-emitting light source according to claim 1, characterized in that, The light-shielding layer also extends onto part or all of the insulating layer.

3. The semiconductor light source according to claim 1, characterized in that, The shape of the light-shielding layer is one or more combinations of lines, frames, grids, patterns, letters, and symbols.

4. The semiconductor light source according to claim 1, characterized in that, The semiconductor light-emitting chip also includes thermally conductive pads disposed on the semiconductor light-emitting stack; the thermally conductive pads and the pad assembly are insulated from each other.

5. The semiconductor light source according to claim 1, characterized in that, The semiconductor light source further includes a reflective layer; the reflective layer is disposed between the insulating layer and the side of the semiconductor light-emitting chip.

6. The semiconductor light-emitting light source according to any one of claims 1-5, characterized in that, The semiconductor light source also includes a light-transmitting layer; The light-transmitting layer fills the hollowed-out areas of the light-shielding layer; and / or The light-transmitting layer is disposed between the light-emitting surface of the semiconductor light-emitting chip and the light-shielding layer.

7. The semiconductor light-emitting light source according to claim 6, characterized in that, The light-transmitting layer includes a light-receiving end face and a light-emitting curved surface facing away from each other; the light-receiving end face of the light-transmitting layer faces the semiconductor light-emitting chip, so that the semiconductor light-emitting chip is located within the light-receiving end face of the light-transmitting layer.

8. The semiconductor light-emitting light source according to claim 7, characterized in that, The light-receiving end face of the light-transmitting layer is provided with an outwardly extending skirt edge, which is embedded in the light-shielding layer.

9. The semiconductor light-emitting light source according to any one of claims 1-5, characterized in that, The semiconductor light source further includes a first light-transmitting layer and a second light-transmitting layer; The first light-transmitting layer is disposed between the light-emitting surface of the semiconductor light-emitting chip and the light-shielding layer, and the second light-transmitting layer fills the hollowed-out positions of the light-shielding layer.

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