Semiconductor device and display

Abstract

The application provides a semiconductor device and a display screen, the semiconductor device comprising a light-emitting substrate and a first encapsulation layer, wherein the light-emitting substrate comprises a plurality of light-emitting units, and each light-emitting unit comprises a plurality of lamp beads; the first encapsulation layer covers the plurality of light-emitting units, part of the first encapsulation layer covers the side walls of the light-emitting units between adjacent light-emitting units and covers the areas between adjacent light-emitting units, and the first distance between the side surface of the first encapsulation layer away from the light-emitting substrate and the light-emitting units is greater than or equal to 10 times the height of the lamp beads. A sufficient scattering space is reserved for the light emitted from the lamp beads, which helps the light to be uniformly distributed in the wider first encapsulation layer, and then the light-emitting surface of the entire first encapsulation layer can be covered before the light exits to the critical point of the first encapsulation layer in the air, the brightness of the device light-emitting can be more uniform under different viewing angles, and the problem of brightness non-uniformity of the semiconductor device under different viewing angles in the prior art is solved.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically, to a semiconductor device and a display screen. Background Technology

[0002] Micro-in-Package (MIP) packaging technology has been widely used in recent years with the maturity of microchip mass transfer technology, especially in the manufacture of ultra-small pitch display screens. However, current MIP packaging structures exhibit uneven light emission from internal light-emitting devices when viewed from different angles.

[0003] The information disclosed above in the background section is only intended to enhance the understanding of the background art of the art described herein. Therefore, the background art may contain certain information that does not constitute prior art known to those skilled in the art in this country. Utility Model Content

[0004] The main objective of this application is to provide a semiconductor device and a display screen to solve the problem of uneven brightness of semiconductor devices under different viewing angles in the prior art.

[0005] To achieve the above objectives, according to one aspect of this application, a semiconductor device is provided, comprising: a light-emitting substrate including a plurality of light-emitting units, the light-emitting units including a plurality of LEDs; a first encapsulation layer covering the plurality of light-emitting units, a portion of the first encapsulation layer being located between adjacent light-emitting units, the side surface of the first encapsulation layer facing away from the light-emitting substrate having a first distance between it and the light-emitting units, the first distance being greater than or equal to 10 times the height of the LEDs.

[0006] Optionally, the first distance is 100μm to 200μm.

[0007] Optionally, the semiconductor device further includes light-regulating particles distributed in the first encapsulation layer for regulating the light emission uniformity of the light-emitting unit.

[0008] Optionally, the light-emitting unit further includes a first substrate and a second encapsulation layer, wherein a plurality of the lamp beads are spaced apart on the first substrate; the second encapsulation layer covers the lamp beads and the first substrate.

[0009] Optionally, there is a second distance between the side surface of the second encapsulation layer facing away from the first substrate and the side surface of the first substrate where the LED beads are distributed, the second distance being greater than or equal to twice the height of the LED beads.

[0010] Optionally, the second distance is 20 μm to 50 μm.

[0011] Optionally, the refractive index of the first encapsulation layer is less than or equal to the refractive index of the second encapsulation layer.

[0012] Optionally, the light-emitting substrate further includes a second substrate, on which a plurality of light-emitting units are spaced apart, and a first spacing is provided between adjacent light-emitting units.

[0013] Optionally, the first spacing is 0.4mm to 0.7mm.

[0014] According to another aspect of this application, a display screen is provided, including a driving substrate and a plurality of semiconductor devices, the semiconductor devices being spaced apart on the driving substrate.

[0015] According to the technical solution of this application, a semiconductor device includes a light-emitting substrate and a first encapsulation layer. The light-emitting substrate includes multiple light-emitting units, each of which includes multiple LEDs. The first encapsulation layer covers the multiple light-emitting units, with a portion of the first encapsulation layer located between adjacent light-emitting units, covering the sidewalls of the light-emitting units and the area between adjacent light-emitting units. A first distance exists between the surface of the first encapsulation layer facing away from the light-emitting substrate and the light-emitting units, and this first distance is greater than or equal to 10 times the height of the LEDs. Setting the distance between the upper surface of the first encapsulation layer and the upper surface of the light-emitting units to be greater than or equal to 10 times the height of the LEDs provides sufficient scattering space for the light emitted from the LEDs. This helps the light to be evenly distributed within a wider first encapsulation layer, rather than directly penetrating the first encapsulation layer into the air. Consequently, the light can fill the entire light-emitting surface of the first encapsulation layer before reaching the critical point between the first encapsulation layer and the air, resulting in more uniform brightness of the emitted light from the device when observed from different viewing angles. This solves the problem of uneven brightness of semiconductor devices under different viewing angles in the prior art. Attached Figure Description

[0016] The accompanying drawings, which form part of this application, are used to provide a further understanding of this application. The illustrative embodiments and descriptions of this application are used to explain this application and do not constitute an undue limitation of this application. In the drawings:

[0017] Figure 1 A cross-sectional structural schematic diagram of a semiconductor device according to an embodiment of this application is shown;

[0018] Figure 2 A cross-sectional structural schematic diagram of a display screen according to an embodiment of this application is shown.

[0019] The above figures include the following reference numerals:

[0020] 10. Light-emitting substrate; 11. Light-emitting unit; 12. Second substrate; 13. Second pad; 20. First encapsulation layer; 30. Light-regulating particles; 31. Diffusion powder; 32. Black powder; 40. Driving substrate; 111. Lamp bead; 112. First substrate; 113. Second encapsulation layer; 114. First pad. Detailed Implementation

[0021] It should be noted that the following detailed descriptions are illustrative and intended to provide further explanation of this application. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains.

[0022] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0023] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this utility model are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate for the embodiments of the utility model described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, system, product, or device that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, products, or devices.

[0024] It should be understood that when an element (such as a layer, film, region, or substrate) is described as being "on" another element, the element may be directly on the other element, or there may be an intermediate element present. Furthermore, in the specification and claims, when an element is described as being "connected" to another element, the element may be "directly connected" to the other element, or "connected" to the other element via a third element.

[0025] As described in the background section, MIP packaging technology has been widely used in recent years with the maturity of microchip mass transfer technology, especially in the manufacturing of ultra-small pitch display screens. However, current MIP packaging structures exhibit uneven light emission from internal light-emitting devices when viewed from different angles. To address the problem of uneven brightness in semiconductor devices under different viewing angles in the prior art, embodiments of this application provide a semiconductor device and a display screen.

[0026] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention.

[0027] According to one aspect of this application, such as Figure 1 As shown, a semiconductor device 1 is provided, comprising: a light-emitting substrate 10 including a plurality of light-emitting units 11, wherein the light-emitting units include a plurality of lamp beads 111; a first encapsulation layer 20 covering the plurality of light-emitting units 11, wherein a portion of the first encapsulation layer 20 is located between adjacent light-emitting units 11, and a first distance h1 is formed between the surface of the first encapsulation layer 20 facing away from the light-emitting substrate 10 and the light-emitting units 11, wherein the first distance h1 is greater than or equal to 10 times the height of the lamp beads 111.

[0028] By setting the distance between the upper surface of the first packaging layer of the semiconductor device and the upper surface of the light-emitting unit to be greater than or equal to 10 times the height of the LED, sufficient scattering space is reserved for the light emitted from the LED. This helps the light to be evenly distributed in the wider first packaging layer, rather than directly penetrating the first packaging layer into the air. As a result, the light can fill the entire light-emitting surface of the first packaging layer before the light reaches the critical point between the first packaging layer and the air. The brightness of the light emitted by the device can be observed to be more uniform from different viewing angles, solving the problem of uneven brightness of semiconductor devices at different viewing angles in the prior art.

[0029] For example, the aforementioned multiple LEDs are multiple RGB light-emitting units, and each light-emitting unit contains red, green, and blue LEDs, with a height of approximately 10 μm. The aforementioned light-emitting substrate is fabricated using high-precision wafer-level mass transfer technology, resulting in an extremely dense arrangement of the LEDs, with a spacing between the LEDs less than 0.46 mm, meeting the requirements of ultra-fine pitch displays.

[0030] In the above embodiments, the first encapsulation layer is a fully transparent film with a refractive index of approximately 1.3 to 1.4, which is close to the refractive index of air. This reduces total internal reflection of light emitted from the first encapsulation layer into the air, thus reducing light loss. The material of the first encapsulation layer can be any of UV-curable acrylic adhesive, silicone encapsulating adhesive, and organic-inorganic composite optical adhesive, but is not limited to these. The first distance (at least 10 times the height of the LED bead) between the first encapsulation layer and the light-emitting unit can effectively improve luminous efficiency and color purity. Simultaneously, it can also improve the brightness uniformity when observing the device from different angles, because the light has sufficient scattering path when passing through the first encapsulation layer, allowing the light to be emitted uniformly from the entire surface of the first encapsulation layer, thereby improving the uniformity of the emitted brightness.

[0031] To ensure uniform light output from the device and to minimize the size of the semiconductor device, in some alternative implementations, such as... Figure 1 As shown, the first distance h1 is 100μm to 200μm. Limiting the first distance to this range allows the light emitted from the LED to have a sufficiently long scattering path, which further improves the uniformity of the emitted light brightness. It also allows for a smaller thickness of the semiconductor device, thus reducing its volume.

[0032] To further improve the uniformity of light output brightness from semiconductor devices at different angles, in some optional implementations, such as Figure 1 As shown, the aforementioned semiconductor device also includes light-regulating particles 30, which are distributed within the first encapsulation layer 20 and used to regulate the light emission uniformity of the light-emitting unit 11. The light-regulating particles 30 can be uniformly distributed throughout the entire first encapsulation layer 20, or they can be uniformly distributed in divided regions of the first encapsulation layer 20. For example, the first encapsulation layer 20 can be divided into a first region and a second region according to height. The first region is the area of ​​the first encapsulation layer 20 closest to the light-emitting unit 11, and the second region is the area of ​​the first encapsulation layer 20 away from the first region. Different densities of light-regulating particles 30 can be provided in the first and second regions. For example, the density of light-regulating particles 30 in the first region is higher than that in the second region. This allows the refractive index of light to decrease as it travels from the lamp bead 111 to the air from the first encapsulation layer 20, making the refractive index of the light more closely match that of air, further reducing total internal reflection and light loss.

[0033] In the above optional embodiments, the mass ratio of the first encapsulation layer to the light-modulating particles can be (1:0.2) to (1:0.35). For example, the mass ratio of the first encapsulation layer to the light-modulating particles can be (1:0.28). Figure 1 As shown, exemplarily, the light-regulating particles 30 include diffuser powder 31 and black powder 32, with a mass ratio of the first encapsulation layer 20, diffuser powder 31, and black powder 32 of (1:0.08:0.2). Within this range, the light emitted from the LED beads 111 can be better scattered, resulting in more uniform scattering of light emitted from each light-emitting unit 11 within the first encapsulation layer 20, thus making the emitted light more uniform and reducing hotspot effects. Furthermore, in micro-pitch display technology, the introduction of diffuser powder 31 and black powder 32 also helps reduce light crosstalk between different pixels, further improving the brightness uniformity of the screen at different viewing angles. The addition of light-regulating particles 30 allows the first encapsulation layer 20 not only to protect the light-emitting unit 11 but also to further uniformly distribute the emitted light through the internal light-regulating particles 30 (such as diffuser powder and black powder), reducing brightness differences at different viewing angles.

[0034] In the above optional embodiments, the particle size of the diffuser powder is typically at the micrometer level, ranging from 1 to 5 μm. This maximizes the light scattering effect while minimizing the impact on display clarity. By controlling the distribution of the diffuser powder and the thickness of the first encapsulation layer, the light-emitting surface of the device can be made more uniform, maintaining consistent display performance even under extreme viewing angle conditions. The black powder can also be a black agent, which has excellent light absorption characteristics, absorbing most non-emitting light and reducing optical crosstalk between adjacent pixels. In the first encapsulation layer, the black powder is evenly distributed around each light-emitting unit, ensuring consistent background light absorption for each unit and avoiding localized over-brightness or under-darkness. By absorbing unnecessary ambient light and backlight, optical crosstalk is reduced, improving the clarity and contrast of the display module under different ambient light conditions. The black powder has good compatibility with the material of the first encapsulation layer, ensuring that the performance of the first encapsulation layer will not degrade under prolonged use. Simultaneously, the black powder also possesses sufficient durability to resist the effects of environmental factors such as humidity and temperature changes.

[0035] In the above optional embodiments, the material of the diffusion powder may include, but is not limited to, one or more of silicon dioxide, titanium dioxide, zirconium oxide, polymer microspheres (such as polystyrene or copolymer microspheres), ceramic microparticles (including alumina and magnesium oxide), and glass. The black powder may include, but is not limited to, carbon black, graphene, carbon nanotubes (CNTs), and metal oxides (such as copper oxide, manganese oxide, etc.).

[0036] In some alternative implementations, such as Figure 1As shown, the light-emitting unit 11 further includes a first substrate 112 and a second encapsulation layer 113. Multiple LED beads 111 are spaced apart on the first substrate 112. The second encapsulation layer 113 covers the LED beads 111 and the first substrate 112. The first substrate 112 provides support for the LED beads 111, and its thickness can be 80–120 μm. The second encapsulation layer 113 encapsulates and protects the LED beads 111. This structural arrangement of the light-emitting unit 11 allows for easier integration of multiple light-emitting units 11 into other structures, forming a multi-functional semiconductor device. This multi-functional semiconductor device enables a higher density of display pixels, thereby improving display clarity and detail. For example, when applied to microdisplays and ultra-high-definition large screens, it can display clearer images. Furthermore, the multi-functional semiconductor device reduces the steps and time required to process each unit individually, simplifying the manufacturing process and lowering production costs.

[0037] In the above optional embodiments, the light-emitting unit 11 further includes a first pad 114, which is used to connect the light-emitting unit 11 to other structures, so as to connect the lamp beads 111 in the light-emitting unit 11 to other structures, so that other structures can smoothly control the lamp beads 111 to emit light.

[0038] The second encapsulation layer is a fully transparent film, and the material may include, but is not limited to, epoxy resin, polyurethane resin, acrylic resin and silicone resin.

[0039] In the above optional embodiments, the fabrication process of the light-emitting unit may include: firstly, providing a lower mold as a substrate, placing a first substrate with a first pad on the substrate, having RGB LEDs on the first substrate, then providing an upper mold, a release film, and a second encapsulation layer stacked sequentially, bonding the upper mold, release film, and second encapsulation layer to the first substrate with LEDs by hot pressing, removing the upper mold after a set time, removing the release film from the second encapsulation layer using a release film removal device, and then cutting, measuring, and sorting the semi-finished product to remove defective products, thereby obtaining the light-emitting unit.

[0040] The release film device described above includes a roller with a high-viscosity adhesive on its surface. The viscosity of the roller is at least greater than that between the release film and the second encapsulation layer. The roller is placed at the edge of the release film and rolled to gradually lift the release film. As the roller rolls, it detaches from the second encapsulation layer and tears the release film off.

[0041] In some alternative implementations, such as Figure 1As shown, a second distance h2 exists between the surface of the second encapsulation layer 113 facing away from the first substrate 112 and the surface of the first substrate 112 on which the LED beads 111 are distributed. The second distance h2 is greater than or equal to twice the height of the LED beads 111. Setting the second distance h2 to twice the height of the LED beads 111 allows the light emitted from the LED beads 111 to be transmitted to the first encapsulation layer 20 for scattering in a timely manner, thereby reducing light loss in the second encapsulation layer 113.

[0042] To make semiconductor devices smaller, such as Figure 1 As shown, in some optional embodiments, the second distance h2 is 20 μm to 50 μm. For example, the second distance h2 is 20 μm. Setting the second distance h2 within this range is significantly lower than the thickness of the encapsulating adhesive in conventional MIP structures (0.08 to 0.12 mm). The second distance h2 is only twice the height of the LED bead 111 (approximately 10 μm), which can reduce total internal reflection loss of light within the second encapsulation layer 113. Combined with the first encapsulation layer 20, it can provide a more stable light mixing effect at different viewing angles, and can also reduce the consumption of encapsulation materials, thus lowering manufacturing costs.

[0043] In some optional embodiments, the refractive index of the first encapsulation layer is less than or equal to the refractive index of the second encapsulation layer. The refractive index of the second encapsulation layer can be between 1.4 and 1.5. This allows light emitted from the LED chip to gradually pass through a structure with a refractive index closer to that of air, reducing light loss. Setting the refractive index of the second encapsulation layer within this range allows light to transition from the LED chip to the second encapsulation layer, avoiding excessive total internal reflection caused by a large difference in refractive index. Furthermore, the small difference in refractive index between the first and second encapsulation layers also reduces total internal reflection. The fact that the refractive index of the first encapsulation layer is similar to that of air further reduces total internal reflection, thus better preserving light, avoiding excessive light loss, and improving the luminous efficiency of the semiconductor device.

[0044] In some alternative implementations, such as Figure 1As shown, the light-emitting substrate 10 further includes a second substrate 12, on which multiple light-emitting units 11 are spaced apart, with a first spacing d1 between adjacent light-emitting units 11. The thickness of the second substrate 12 can be 100-150 μm. The second substrate 12 is used to support multiple light-emitting units 11, realizing an all-in-one semiconductor device. By reasonably controlling the spacing between the multiple light-emitting units 11, i.e., the first spacing, the independence and light mixing effect of adjacent light-emitting units 11 can be guaranteed. The first spacing d1 can be between 0.4 mm and 0.7 mm. Within the above distance range, combined with the structure of the first encapsulation layer 20 and the second encapsulation layer 113, not only is crosstalk between different RGB units (LEDs) reduced, but the color mixing effect and viewing angle independence are further optimized by setting the thickness of the first encapsulation layer 20 and the second encapsulation layer 113 and the distribution of the light-controlling particles 30.

[0045] In the above optional implementations, such as Figure 1 As shown, the light-emitting substrate 10 also includes a second pad 13. The light-emitting unit 11 is connected to the driving substrate on the display screen through the second substrate 12 and the second pad 13. The number of second pads 13 is the same as the number of different types of lamp beads 111 in the light-emitting unit 11, so that the driving substrate can independently control the operation of each type of lamp bead 111.

[0046] In the above optional embodiments, the fabrication process of the light-emitting substrate is as follows: the light-emitting unit obtained above is disposed on the second substrate by die bonding, and covered with the first encapsulation layer; the above structure is cut, spot tested, and sorted to remove defective products to obtain the light-emitting substrate. The above first encapsulation layer can be a first encapsulation layer doped with diffusing powder and black powder.

[0047] According to another aspect of this application, such as Figure 2 As shown, a display screen 2 is provided, including a driving substrate 40 and a plurality of semiconductor devices 1 as described above, wherein the semiconductor devices 1 are spaced apart on the driving substrate 40.

[0048] By employing the aforementioned semiconductor device in the display screen, the distance between the upper surface of the first encapsulation layer and the upper surface of the light-emitting unit is set to be greater than or equal to 10 times the height of the LED bead, providing sufficient scattering space for the light emitted from the LED bead. This helps the light to be evenly distributed in a wider first encapsulation layer, rather than directly penetrating the first encapsulation layer into the air. Consequently, the light can fill the entire light-emitting surface of the first encapsulation layer before reaching the critical point between the first encapsulation layer and the air. This allows for a more uniform brightness of the emitted light from the device when viewed from different angles, solving the problem of uneven brightness of semiconductor devices at different viewing angles in the prior art. The aforementioned display screen, including this semiconductor device, can thus make the light emission of the display screen more uniform, with essentially consistent brightness at different viewing angles.

[0049] In the above embodiments, the driving substrate 40 includes a thin-film transistor array (TFT array) for controlling the switching and brightness of each pixel. It consists of a gate, source, drain, and a semiconductor layer, typically amorphous silicon or polycrystalline silicon. The TFT array can independently control each pixel (light-emitting unit), thereby achieving a fast response and high-contrast display effect.

[0050] In this utility model, the materials of the first substrate and the second substrate can be conventionally selected from the prior art, such as polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyaryl compounds (PAR), glass fiber reinforced plastic (FRP), glass and ceramics, and this application does not make any specific limitation.

[0051] The semiconductor device described above in this application will be specifically described below with reference to specific embodiments.

[0052] Example 1

[0053] Semiconductor devices include:

[0054] The light-emitting substrate includes a light-emitting unit, which includes a first substrate, a first pad, a second encapsulation layer, and multiple LEDs. The first substrate has a thickness of 100μm and is made of polyimide. The first pad is made of copper. The second encapsulation layer has a thickness of 20μm and is made of epoxy resin. The LEDs have a height of 10μm and include three colors: red, green, and blue.

[0055] The first encapsulation layer covers the light-emitting unit and has a thickness of 150 μm. The material is acrylic resin.

[0056] Example 2

[0057] Semiconductor devices include:

[0058] The light-emitting substrate includes a light-emitting unit, which includes a first substrate, a first pad, a second encapsulation layer, and multiple LEDs. The first substrate has a thickness of 100μm and is made of polyimide. The first pad is made of copper. The second encapsulation layer has a thickness of 20μm and is made of epoxy resin. The LEDs have a height of 10μm and include three colors: red, green, and blue.

[0059] The first encapsulation layer covers the light-emitting unit and has a thickness of 150 μm. The material is acrylic resin. The first encapsulation layer is doped with diffusing powder and black powder, wherein the mass ratio of the first encapsulation layer, diffusing powder and black powder is 1:0.08:0.2. The material of the diffusing powder is silicon dioxide and the material of the black powder is graphene.

[0060] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0061] As can be seen from the above description, the embodiments of this application achieve the following technical effects:

[0062] 1) The semiconductor device of this application sets the distance between the upper surface of the first encapsulation layer and the upper surface of the light-emitting unit to be greater than or equal to 10 times the height of the lamp bead, which provides sufficient scattering space for the light emitted from the lamp bead. This helps the light to be evenly distributed in the wider first encapsulation layer, rather than directly penetrating the first encapsulation layer into the air. Thus, the light can fill the entire light-emitting surface of the first encapsulation layer before the light reaches the critical point between the first encapsulation layer and the air. The brightness of the light emitted by the device can be observed to be more uniform from different viewing angles, which solves the problem of uneven brightness of semiconductor devices under different viewing angles in the prior art.

[0063] 2) The first packaging layer of the semiconductor device of this application is doped with diffuser powder and black powder. The introduction of diffuser powder and black powder also helps to reduce optical crosstalk between different pixels, further improve the brightness uniformity of the screen under different viewing angles, and reduce the brightness difference between different viewing angles.

[0064] 3) The thickness of the second packaging layer of the semiconductor device in this application is between 20μm and 50μm, which can reduce the total internal reflection loss of light in the second packaging layer, making the semiconductor device thinner and smaller in size.

[0065] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A semiconductor device, characterized by, include: A light-emitting substrate includes multiple light-emitting units, wherein each light-emitting unit includes multiple LED beads; A first encapsulation layer covers a plurality of the light-emitting units, a portion of the first encapsulation layer is located between adjacent light-emitting units, and a first distance is formed between the side surface of the first encapsulation layer facing away from the light-emitting substrate and the light-emitting unit, the first distance being greater than or equal to 10 times the height of the lamp bead.

2. The semiconductor device according to claim 1, wherein The first distance is 100μm to 200μm.

3. The semiconductor device of claim 1, wherein The semiconductor device further includes light-regulating particles distributed in the first encapsulation layer, which are used to regulate the light emission uniformity of the light-emitting unit.

4. The semiconductor device of claim 1, wherein The light-emitting unit further includes a first substrate and a second encapsulation layer, wherein... The plurality of the lamp beads are spaced apart on the first substrate; The second encapsulation layer covers the LED chip and the first substrate.

5. The semiconductor device of claim 4, wherein, The second encapsulation layer has a second distance between the side surface of the second encapsulation layer away from the first substrate and the side surface of the first substrate where the LED beads are distributed, and the second distance is greater than or equal to twice the height of the LED beads.

6. The semiconductor device according to claim 5, wherein The second distance is 20μm to 50μm.

7. The semiconductor device of claim 4, wherein The refractive index of the first encapsulation layer is less than or equal to the refractive index of the second encapsulation layer.

8. The semiconductor device of claim 1, wherein The light-emitting substrate further includes a second substrate, on which a plurality of light-emitting units are spaced apart, and a first spacing is provided between adjacent light-emitting units.

9. The semiconductor device of claim 8, wherein, The first spacing is 0.4mm to 0.7mm.

10. A display screen, characterized by It includes a driving substrate and a plurality of semiconductor devices according to any one of claims 1 to 9, wherein the semiconductor devices are spaced apart on the driving substrate.

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