Wafer laser annealing apparatus

CN224775329UActive Publication Date: 2026-09-18LIANGHUO SEMICON EQUIP (SHANGHAI) CO LTD
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Patent Information

Application Number
CN202521995926.9
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-09-17
Publication Date
2026-09-18
Estimated Expiration
2035-09-17

AI Technical Summary

Technical Problem

[0004]上述现有技术虽然实现了激光头的功率校准,但是其没有对退火腔内部的环境进行控制,需额外定期清理退货腔,无法始终保持退火腔内部的洁净

Benefits of technology

本发明通过可以滑动的功率计组件的滑动部设置通气槽,在调用和退出功率计组件的过程中,都会建立退火腔内部和外部的连通通道,在退火腔内部高压气体的作用下,将退火腔内部的粉尘和杂质气体排出,实现退火腔的自清洁,保证退火腔内部环境的高度清洁。

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Abstract

A wafer laser annealing apparatus includes a laser emitting head, an annealing chamber, a quartz plate, a wafer, a power meter assembly, a cylinder, and a housing. The annealing chamber is located inside the housing, and the laser emitting head is located above the annealing chamber. The quartz plate is fixedly covered on the top surface of the annealing chamber. The wafer and the power meter assembly are located inside the annealing chamber. A window is provided on the side wall of the housing. The support part of the power meter assembly is linearly movable and installed in the window. A venting groove is provided on the support part to allow the annealing chamber to communicate with the outside. This invention uses a sliding part of the slidable power meter assembly to set up a venting groove. During the process of calling and retracting the power meter assembly, a communication channel is established between the inside and outside of the annealing chamber. Under the action of high-pressure gas inside the annealing chamber, dust and impurities inside the annealing chamber are discharged, realizing the self-cleaning of the annealing chamber and ensuring a high degree of cleanliness inside the annealing chamber.
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Description

Technical Field

[0001] This invention relates to the field of wafer processing technology, specifically to a wafer laser annealing apparatus. Background Technology

[0002] The annealing process for wafers requires extremely high temperatures, so laser heating is necessary. The process also needs to be carried out in a sealed environment to avoid contamination from environmental dust and certain gases. At the same time, high-pressure inert gas is filled inside to ensure that the annealing process is not interfered with by impurities in the air.

[0003] CN117747505A discloses a laser annealing apparatus and a laser annealing power calibration method, comprising a laser head, a scanning motion assembly, and a process chamber. The laser head is fixed on the scanning motion assembly, which drives the laser head to move, completing the annealing of the wafer to be annealed. The process chamber includes a light-transmitting window, a workpiece stage, and a power metering assembly. The light-transmitting window transmits the annealing laser from the laser head. The workpiece stage is used to place the wafer to be annealed. The power metering assembly can be set on a working plane at the same height as the upper surface of the workpiece stage and is used to record the actual received power obtained by the annealing laser at various positions on the working plane.

[0004] While the aforementioned existing technology achieves power calibration of the laser head, it does not control the environment inside the annealing chamber, requiring additional periodic cleaning of the annealing chamber and failing to maintain its cleanliness at all times. Utility Model Content

[0005] The purpose of this invention is to provide a wafer laser annealing apparatus to solve the problems mentioned in the background art.

[0006] To achieve the above objectives, the present invention provides the following technical solution: A wafer laser annealing apparatus includes a laser emitting head, an annealing chamber, a quartz plate, a wafer, a power meter assembly, a cylinder, and a housing. The annealing chamber is located inside the housing, the laser emitting head is located above the annealing chamber, the quartz plate is fixedly covered on the top surface of the annealing chamber, the wafer and the power meter assembly are located inside the annealing chamber, a window is provided on the side wall of the housing, the support part of the power meter assembly is linearly movably installed in the window, and a ventilation groove is provided on the support part to allow the annealing chamber to communicate with the outside.

[0007] Furthermore, the power meter assembly also includes a laser power meter, a sliding bar as a support, and a sealing assembly. The sliding bar is linearly movably installed inside the window. The laser power meter is fixed to the end of the sliding bar and located inside the annealing chamber. Sealing assemblies are provided at both ends of the sliding bar, and ventilation grooves are provided on the sliding bar.

[0008] Furthermore, the sealing assembly includes a sealing ring and a baffle. There are two baffles, which are respectively fixed at both ends of the sliding strip. The sealing rings are disposed on the baffles, with one on each baffle and the two sealing rings are arranged opposite each other.

[0009] Furthermore, a linear drive assembly is provided between the power meter assembly and the housing. The linear drive assembly is a cylinder, and the actuator of the cylinder is fixedly connected to the sliding bar, with the fixed end fixed to the housing.

[0010] Compared with the prior art, the beneficial effects of the present invention are: This invention incorporates a venting groove in the sliding part of a sliding power meter assembly. During the process of calling up and retracting the power meter assembly, a communication channel is established between the inside and outside of the annealing chamber. Under the action of high-pressure gas inside the annealing chamber, dust and impurities inside the annealing chamber are discharged, achieving self-cleaning of the annealing chamber and ensuring a highly clean environment inside the annealing chamber. Attached Figure Description

[0011] Figure 1 This is a three-dimensional structural diagram of the present invention; Figure 2 This is a schematic cross-sectional view of the casing of the present invention; Figure 3 This is a three-dimensional structural diagram of the power meter assembly of the present invention; Figure 4 This is a partial cross-sectional schematic diagram of the power meter assembly of the present invention; In the diagram: 1. Laser emitter, 2. Annealing chamber, 3. Quartz plate, 4. Wafer, 5. Power meter assembly, 51. Vent groove, 52. Laser power meter, 53. Sliding bar, 54. Sealing ring, 55. Baffle, 6. Cylinder, 7. Housing, 71. Window. Detailed Implementation

[0012] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0013] Example: Please see Figures 1 to 4 This invention provides a technical solution for a wafer laser annealing apparatus: A wafer laser annealing apparatus includes a laser emitting head 1, an annealing chamber 2, a quartz plate 3, a wafer 4, a power meter assembly 5, a cylinder 6, and a housing 7. The annealing chamber 2 is located inside the housing 7, and the laser emitting head 1 is located above the annealing chamber 2. The quartz plate 3 is fixedly covered on the top surface of the annealing chamber 2. The annealing chamber 2 is filled with high-pressure inert gas to ensure the annealing gas environment. The wafer 4 and the power meter assembly 5 are located inside the annealing chamber 2. The laser emitting head 1 emits a laser that passes through the quartz plate 3 to irradiate the wafer 4, realizing the annealing process. The power meter assembly 5 calibrates the laser power passing through the quartz plate 3 to ensure the accuracy of the annealing temperature. A window 71 is provided on the side wall of the housing 7. The support part of the power meter assembly 5 is linearly movable in the window 71. A ventilation groove 51 is provided on the support part to allow the annealing chamber 2 to communicate with the outside.

[0014] In a preferred embodiment, the power meter assembly 5 further includes a laser power meter 52, a sliding bar 53 serving as a support, and a sealing assembly. The sliding bar 53 is linearly mounted within the window 71. The laser power meter 52 is fixed to the end of the sliding bar 53 and located within the annealing chamber 2. The sliding bar 53 slides within the window 71. When the laser power of the laser emitter 1 needs to be calibrated, the sliding bar 53 moves to position the laser power meter 52 directly above the wafer 4, receiving the laser light transmitted through the quartz plate 3 and detecting the laser power. After the laser power adjustment is completed, the sliding bar 53 is moved again to position the laser power meter 52 within the area occupied by the wafer 4. On the outside of the area, without affecting the formal annealing process of wafer 4, the sliding bar 53 is equipped with sealing components at both ends, and a venting groove 51 is opened on the sliding bar 53. When the sealing components and window 71 cooperate to form a seal, that is, during the laser power detection process and the formal annealing process of wafer 4, the sealing components isolate the internal and external environments of the annealing chamber 2. During the movement of the sliding bar 53, the sealing components and window 71 do not contact each other, and the sealing condition is released. At the same time, the venting groove 51 increases the contact channel between the internal and external environments of the annealing chamber 2. Meanwhile, the high-pressure gas inside the annealing chamber 2 can discharge dust and impurity gases to the external environment through the venting groove 51.

[0015] In a preferred embodiment, the sealing assembly includes a sealing ring 54 and a baffle 55. There are two baffles 55, which are respectively fixed at both ends of the sliding strip 53. One end is located inside the annealing chamber 2, and the other end is located outside the housing 7. The sealing ring 54 is disposed on the baffle 55, with one sealing ring on each baffle 55. When the sliding strip 53 moves to the extreme position inside the annealing chamber 2, the sealing ring 54 outside the housing 7 and the outer side of the window 71 are in close contact. When the sliding strip 53 moves to the extreme position outside the housing 7, the sealing ring 54 inside the annealing chamber 2 and the inner side of the window 71 are in close contact. The two sealing rings 54 are arranged opposite each other to ensure the sealing effect at the extreme position.

[0016] In a preferred embodiment, a linear drive assembly is provided between the power meter assembly 5 and the housing 7. The linear drive assembly is a cylinder 6. The actuator of the cylinder 6 is fixedly connected to the sliding bar 53, and the fixed end is fixed on the housing 7 to control the movement and stillness of the sliding bar 53.

[0017] In a preferred embodiment, the linear drive assembly includes, but is not limited to, the cylinder 6, and can be any other component capable of achieving linear reciprocating motion, which will not be elaborated here.

[0018] The working principle of this invention is as follows: Before the laser power calibration of the laser emitter 1, the sliding bar 53 moves to its limit position outside the housing 7. The sealing ring 54 inside the annealing chamber 2 and the inner side of the window 71 are in close contact, forming a closed environment inside the annealing chamber 2 and filling it with high-pressure inert gas. The cylinder 6 controls the sliding bar 53 to move into the annealing chamber 2, and the laser power meter 52 moves directly above the wafer 4. At the same time, the venting groove 51 connects the inside of the annealing chamber 2 and the outside of the housing 7. Under the action of high-pressure gas, the dust and impurities inside the annealing chamber 2 are discharged through the venting groove 51. High-pressure inert gas is continuously filled until the sliding bar 53 moves into the annealing chamber. 2. When the internal part moves to the limit position, the sealing ring 54 on the outside of the housing 7 and the outside of the window 71 are in close contact, and the internal part of the annealing chamber 2 is sealed again. The laser power meter 52 reaches the designated position and begins to calibrate the laser emitter 1. After calibration, the cylinder 6 controls the sliding bar 53 to move to the outside of the housing 7, and the internal part of the annealing chamber 2 is unsealed again and dust and impurity gas are discharged through the ventilation groove 51 until the sliding bar 53 moves to the limit position on the outside of the housing 7, and the internal part of the annealing chamber 2 is sealed again, and the wafer annealing begins. When the internal sealed environment of the annealing chamber 2 is unsealed multiple times, the dust and impurity gas inside the annealing chamber 2 are automatically discharged using high-pressure gas, which plays a self-cleaning role.

[0019] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A wafer laser annealing apparatus, comprising a laser emitting head (1), an annealing chamber (2), a quartz plate (3), a wafer (4), a power meter assembly (5), a cylinder (6), and a housing (7), wherein the annealing chamber (2) is located inside the housing (7), the laser emitting head (1) is located above the annealing chamber (2), the quartz plate (3) is fixedly covering the top surface of the annealing chamber (2), and the wafer (4) and the power meter assembly (5) are located inside the annealing chamber (2), characterized in that: The housing (7) has a window (71) on its side wall. The support of the power meter assembly (5) is linearly and movably installed inside the window (71). The support has a ventilation groove (51) for the annealing chamber (2) to communicate with the outside.

2. The wafer laser annealing apparatus according to claim 1, characterized in that: The power meter assembly (5) also includes a laser power meter (52), a sliding bar (53) as a support, and a sealing assembly. The sliding bar (53) is linearly mounted in the window (71). The laser power meter (52) is fixed at the end of the sliding bar (53) and located in the annealing chamber (2). Sealing assemblies are provided at both ends of the sliding bar (53). A ventilation groove (51) is provided on the sliding bar (53).

3. The wafer laser annealing apparatus according to claim 2, characterized in that: The sealing assembly includes a sealing ring (54) and a baffle (55). There are two baffles (55) and they are fixed at both ends of the sliding strip (53). The sealing rings (54) are set on the baffles (55), one on each baffle (55), and the two sealing rings (54) are set opposite each other.

4. The wafer laser annealing apparatus according to claim 3, characterized in that: A linear drive assembly is provided between the power meter assembly (5) and the housing (7). The linear drive assembly is a cylinder (6). The actuator of the cylinder (6) is fixedly connected to the sliding bar (53), and the fixed end is fixed on the housing (7).

Citation Information

Patent Citations

  • Laser annealing device and laser annealing power calibration method

    CN117747505A