A reaction apparatus and semiconductor process equipment

Abstract

This application discloses a reaction apparatus and semiconductor process equipment, belonging to the technical field of third-generation semiconductor processing equipment. The reaction apparatus includes: a processing chamber, a base, a stage, a signal transmitting component, a signal receiving component, and a rotating shaft. The processing chamber has a reaction cavity; the base is disposed within the processing chamber; the stage is rotatably disposed on the base; the signal transmitting component is configured to transmit a first signal, and the signal receiving component is configured to receive a second signal from the first signal and ambient radiation; the rotating shaft has at least a portion passing through the base and rotatably engaging with the base, and is connected to the stage. By setting a blocking component on the rotating shaft, the blocking component periodically blocks the first signal during the rotation of the shaft. By analyzing the intermittent information of the first signal, the rotational speed of the stage can be indirectly measured, eliminating the need for a speed measuring module. This method offers high detection accuracy, a simple structure, reduces interference with the overall layout of the reaction apparatus, and enhances reaction reliability.

Description

Technical Field

[0001] This application relates to the field of third-generation semiconductor processing equipment technology, and more particularly to a reaction apparatus and semiconductor process equipment. Background Technology

[0002] In semiconductor wafer fabrication processes, such as the manufacturing of third-generation semiconductor devices like GaN or SiC, epitaxial growth is a crucial step. To ensure uniformity in thickness and doping concentration of the epitaxial layer, extremely high temperature uniformity of the substrate is typically required. Existing solutions involve rotating the substrate using a stage to achieve good dynamic temperature uniformity. In specific process steps, precise control of the stage rotation speed is often necessary to reduce substrate thickness variations and doping concentration inhomogeneities. In related technologies, epitaxial growth equipment includes speed measuring devices to detect stage rotation speed. These devices determine the rotation speed by measuring periodically changing temperatures. However, such speed measuring devices lead to overly complex structures in epitaxial growth equipment and are susceptible to background radiation, resulting in distorted results. Utility Model Content

[0003] This application provides a reaction apparatus designed to solve the technical problem that the epitaxial growth equipment is structurally complex and easily affected by background radiation due to the stage speed measuring device.

[0004] Technical solution: This application discloses a reaction apparatus, comprising: Processing chamber, the processing chamber having a reaction chamber; A base, wherein the base is disposed within the processing chamber; A platform, which is rotatably mounted on the base; A signal transmitting component and a signal receiving component, wherein the signal transmitting component is configured to transmit a first signal and the signal receiving component is configured to receive the first signal; A rotating shaft, which at least partially passes through the base and rotatably engages with the base, is connected to the platform, and has a blocking member on the rotating shaft. The blocking member, driven by the rotating shaft, intermittently blocks the first signal during the rotation cycle. The base has a through first signal path, and the blocking member blocks the first signal path intermittently during the rotation cycle. A control component configured to obtain the rotational speed of the shaft based on intermittent information of the first signal received by the signal receiving component.

[0005] In some embodiments, the processing chamber includes a first end wall located upstream of the reaction chamber and a second end wall located downstream of the reaction chamber, as well as a peripheral sidewall connecting the first end wall and the second end wall; The peripheral sidewall has a first hole and a second hole. The first signal path is located between the first hole and the second hole and connects the first hole and the second hole respectively. The signal transmitting component is set corresponding to the first hole, and the signal receiving component is set corresponding to the second hole.

[0006] In some embodiments, the processing chamber includes a first end wall located upstream of the reaction chamber and a second end wall located downstream of the reaction chamber; The first end wall has a first hole, and the second end wall has a second hole. The first hole and the second hole are respectively corresponding to the first signal path. The signal transmitting component is set corresponding to the first hole, and the signal receiving component is set corresponding to the second hole.

[0007] In some embodiments, the base has a through second signal path, which is parallel to the first signal path; The signal transmitting component includes a first transmitter and a second transmitter, and the signal receiving component includes a first receiver and a second receiver. The first transmitter, the first signal path, and the first receiver are correspondingly arranged, and the second transmitter, the second signal path, and the second receiver are correspondingly arranged. Both the first transmitter and the second transmitter are configured to transmit the first signal. The control component is configured to obtain the rotational speed of the shaft based on the first signal received by the first receiver and the first signal received by the second receiver.

[0008] In some embodiments, the base is provided with a third signal path, which is configured as a blind hole; The signal transmitting component includes a first transmitter, and the signal receiving component includes a first receiver and a third receiver. The first transmitter, the first signal path, and the first receiver are correspondingly arranged, and the third receiver is correspondingly arranged with the third signal path. The first transmitter is configured to transmit the first signal, and the third receiver is configured to receive the signal from ambient radiation within the blind hole. The control component is configured to obtain the rotational speed of the shaft based on the first signal received by the first receiver and the signal received by the third receiver.

[0009] In some embodiments, the stage has a protruding mating part on the side away from the reaction chamber, the mating part is connected to the rotating shaft, and the rotating shaft, the mating part and the stage are integrally formed; Alternatively, the stage may have a protruding mating part on the side away from the reaction chamber, the mating part having an assembly groove, and the rotating shaft portion being inserted into the assembly groove.

[0010] In some embodiments, the processing chamber further includes: A top plate, which is spaced apart from the base; A side plate is disposed between the base and the top plate, and connects the base and the top plate respectively. The base, the top plate and the side plate together form the reaction chamber.

[0011] In some embodiments, the processing chamber further includes an insulation cavity, and both the base and the top plate are disposed within the insulation cavity; The reaction device further includes a heating coil, which is configured as an induction coil and wound around the outside of the processing chamber; or, the heating coil is configured as a heating coil and disposed inside the insulation cavity, located between the base and the bottom wall of the processing chamber.

[0012] This application also discloses a semiconductor process apparatus, including the reaction apparatus as described in the above embodiments.

[0013] Beneficial Effects: The reaction apparatus in this embodiment includes a processing chamber, a base, a stage, a signal transmitting component, a signal receiving component, a rotating shaft, and a control component. The base is disposed within the processing chamber; the stage is rotatably disposed on the base; the signal transmitting component is configured to transmit a first signal, and the signal receiving component is configured to receive the first signal; the rotating shaft has at least a portion passing through the base and rotatably engaging with the base, the rotating shaft is connected to the stage, and a blocking component is provided on the rotating shaft. Under the drive of the rotating shaft, the blocking component intermittently blocks the first signal during the rotation cycle; the control component is configured to obtain the rotational speed of the rotating shaft based on the first signal received by the signal receiving component. By providing a blocking component on the rotating shaft, the blocking component periodically blocks the first signal during the rotation of the shaft. By analyzing the discontinuity information of the first signal, indirect measurement of the stage rotational speed is achieved, eliminating the need for a speed measuring module. This method offers high detection accuracy, a simple structure, reduces interference with the overall layout of the reaction apparatus, and enhances reaction reliability.

[0014] The semiconductor process apparatus of this application includes the reaction apparatus as described in the above embodiments. Therefore, it can possess all the technical features and effects of the above-described reaction apparatus, which will not be repeated here.

[0015] Other features and advantages of this application will be described in detail in the following detailed description section. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings, wherein the same reference numerals in the following description denote the same parts.

[0018] Figure 1 This is a partial cross-sectional schematic diagram of the reaction device according to an embodiment of this application, showing that the first signal path is opened on the base; Figure 2 This is a table showing the relationship between the intensity Int of the transmitted signal E and the received signal R of the reaction device in the embodiments of this application within time T; Figure 3 This is a half-sectional schematic diagram of the reaction apparatus according to another embodiment of this application; Figure 4 This is a half-sectional schematic diagram of the reaction device according to another embodiment of this application, and the sectional view direction is the same as... Figure 3 The sectional view direction is perpendicular; Figure 5 This is a top view of the stage and base in the reaction device according to another embodiment of this application. The figure also shows a first transmitter, a second transmitter, a first receiver, and a second receiver. Figure 6 for Figure 5 A half-section diagram showing the cross-section along the second signal path; Figure 7 for Figure 5 A half-section diagram showing the cross-section along the first signal path; Figure 8 This is a top view of the stage and base in the reaction device according to another embodiment of this application. The figure also shows the first transmitter, the first receiver and the third receiver. Figure 9 for Figure 8 A half-section diagram showing the cross-section along the third signal path; Figure 10 for Figure 8 A half-section diagram showing the cross-section along the first signal path; Figure 11 for Figure 5 The table shows the relationship between the intensity Int of the transmitted signal E and the received signal R of the reaction device within time T. In the figure, E1 is the transmitted signal of the first transmitter, E2 is the transmitted signal of the second transmitter, R1 is the received signal of the first receiver, and R2 is the received signal of the second receiver. Figure 12 for Figure 8 The table shows the relationship between the intensity Int of the transmitted signal E and the received signal R of the reaction device within time T. In the figure, E1 is the transmitted signal of the first transmitter, R1 is the received signal of the first receiver, and R3 is the received signal of the third receiver. Figure 13 This is a schematic diagram showing the fit between the stage and the rotating shaft in the reaction apparatus of an embodiment of this application; Figure 14 This is a schematic diagram of the cooperation between the stage and the rotating shaft in a reaction apparatus according to another embodiment of this application.

[0019] Explanation of reference numerals in the attached figures: 10. Processing chamber; 11. First end wall; 12. Second end wall; 13. Top plate; 14. Side plate; 15. Peripheral side wall; 20. Base; 30. Platform; 40. Rotating shaft; 50. Shielding component; 60. Signal transmitting assembly; 61. First transmitter; 62. Second transmitter; 70. Signal receiving assembly; 71. First receiver; 72. Second receiver; 73. Third receiver; 80. Heating coil; 100. Reaction chamber; 101. Insulation chamber; 111. First signal path; 112. Second signal path; 113. Third signal path; 110. First hole; 120. Second hole; 301. Mating part; 302. Assembly slot. Detailed Implementation

[0020] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the protection scope of this application.

[0021] In the description of this application, it should be understood that the terms "upper," "lower," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. In the description of this application, "multiple" means two or more, and "at least one" can refer to one, two, or more, unless otherwise explicitly specified. The terms "first," "second," and "third," etc., are only for the convenience of description and are used to name components or embodiments by number, and do not imply any order of importance between the components or embodiments.

[0022] It is important to note that Figure 2 , Figure 11 and Figure 12In the diagram, Int represents the signal strength, and T represents the time. In the diagram, E1 represents the signal transmitted by the first transmitter 61, E2 represents the signal transmitted by the second transmitter 62, R1 represents the signal received by the first receiver 71, R2 represents the signal received by the second receiver 72, and R3 represents the signal received by the third receiver 73.

[0023] As a preamble to the embodiments of this application, epitaxial growth is a crucial step in semiconductor wafer fabrication. To ensure uniformity in thickness and doping concentration of the epitaxial layer, precise control of the stage rotation speed is necessary to reduce substrate thickness deviation and doping concentration inhomogeneity. In related technologies, epitaxial growth equipment includes a speed measuring device for detecting stage rotation speed; however, such a device leads to excessively complex structures within the epitaxial growth equipment.

[0024] In view of the above, embodiments of this application provide a reaction apparatus aimed at solving at least one of the above-mentioned technical problems.

[0025] Please see Figure 1 As shown, the reaction apparatus provided in this embodiment includes: a processing chamber 10, a base 20, a stage 30, a signal transmitting component 60, a signal receiving component 70, a rotating shaft 40, and a control component. The processing chamber 10 has a reaction cavity 100, which is the direct site for the epitaxial reaction of the substrate. The base 20 is disposed within the processing chamber 10, and the base 20 and the top wall of the processing chamber 10 together form the reaction cavity 100. The base 20 is used to support the stage 30, ensuring the precise position of the stage 30 within the reaction cavity 100 and preventing the stage 30 from shifting and affecting the epitaxial growth of the substrate. Simultaneously, the base 20 functions as a heating chamber, directly or indirectly providing heat to the substrate. The stage 30 is rotatably disposed on the base 20 and is used to support a tray; the tray is used to place and position the substrate. The rotating shaft 40 has at least a portion passing through the base 20 and rotatably engaging with the base 20. The rotating shaft 40 is connected to the stage 30, and a shielding member 50 is provided on the rotating shaft 40. In a specific embodiment, an air flotation system (not shown) is provided between the base 20 and the stage 30. By introducing purge gas between the base 20 and the stage 30 and restricting the flow direction of the purge gas, the stage 30 can be detached from the base 20 and rotate relative to the base 20. The rotating shaft 40 can restrict the rotation center of the stage 30 to remain unchanged, and is also a key link to achieve precise rotation and speed detection of the stage 30. A blocking member 50 is provided on the rotating shaft 40. The signal transmitting component 60 is configured to transmit a first signal, and the signal receiving component 70 is configured to receive the first signal. Under the drive of the rotating shaft 40, the blocking member 50 intermittently blocks the first signal during the rotation cycle. The control component outputs the discontinuity information of the first signal based on the first signal received by the signal receiving component 70, and obtains the actual speed of the rotating shaft 40 based on the discontinuity information.

[0026] It is important to understand that the shielding component 50 rotates synchronously with the rotating shaft 40, intermittently blocking the first signal emitted by the signal transmitting component 60 during the rotation cycle. This allows the signal receiving component 70 to simultaneously acquire the intermittent first signal and the second signal radiated from the environment. The second signal can be understood as an environmental interference signal. The detection component processes the received signal to eliminate the interference of the second signal, ensuring the accuracy of the actual rotation speed of the rotating shaft 40 and avoiding errors caused by the influence of the reaction chamber 100 environment on traditional detection methods. The above solution has a high degree of integration. The shielding component 50 is directly set at one end of the rotating shaft 40, without occupying additional space in the reaction chamber 100, and does not interfere with the substrate epitaxial environment. Precise rotation speed feedback can adjust the rotation speed stability of the stage 30 in real time, ensuring the uniformity of the substrate temperature and the overall consistency of the reaction environment during the reaction. Ultimately, this effectively improves the growth quality of the substrate epitaxial layer, while simplifying the structure, reducing interference with the overall layout of the reaction device, and enhancing the reliability of the reaction.

[0027] In some embodiments, the rotating shaft 40 and the shielding member 50 can be separate structures, and the shielding member 50 is a fork-shaped structure fixed to the end of the rotating shaft 40. The base 20 is provided with a mounting hole for the rotating shaft 40 to pass through, and the shielding member 50 is located in the mounting hole and extends into the diffusion path of the first signal.

[0028] Please see Figure 1 As shown, in some embodiments, the shielding member 50 is integrally disposed with the rotating shaft 40. The shielding member 50 is located at the end of the rotating shaft 40 away from the platform 30, and the shielding member 50 is a cylindrical structure. A through-hole is provided in the cylindrical structure so that the first signal can intermittently pass through the shielding member 50.

[0029] Please see Figure 1 As shown, in some embodiments, the base 20 has a through first signal path 111, and the blocking member 50 intermittently blocks the first signal path 111 during the rotation cycle. The first signal path 111 is located on the base 20, which can avoid the risk of the reaction gas in the reaction chamber 100 diffusing into the space below the base 20 along the assembly hole. At the same time, the first signal path 111 can improve the regularity and accuracy of the rotation speed detection. The through first signal path 111 makes the signal on / off state strongly correlated with the rotation cycle of the blocking member 50. The number of times and the duration of blocking the path are more stable for each rotation of the blocking member 50, which can reduce the error caused by signal fluctuations and further improve the repeatability and accuracy of the actual rotation speed detection of the shaft 40. Furthermore, the entire blocking action is realized within the base 20, which reduces the potential interference of the blocking action on the airflow and temperature field in the cavity and simplifies the overall structural complexity.

[0030] Please see Figure 1 and Figure 3As shown, in some embodiments, the processing chamber 10 includes a first end wall 11 upstream of the reaction chamber 100 and a second end wall 12 downstream. The first end wall 11 has a first hole 110, and the second end wall 12 has a second hole 120. The first hole 110 and the second hole 120 correspond to the first signal path 111, respectively. The signal transmitting component 60 is disposed corresponding to the first hole 110, and the signal receiving component 70 is disposed corresponding to the second hole 120. It should be understood that the processing chamber 10 in this application has a horizontal structure, and the gas flow direction in the reaction chamber 100 is in the transverse direction. Both the first end wall 11 and the second end wall 12 of the processing chamber 10 are thermal insulation walls. By opening holes in the first end wall 11 and the second end wall 12, the first signal path 111 is connected to both the first hole 110 and the second hole 120, thereby forming a detection channel in which the signal transmitting component 60 and the signal receiving component 70 cooperate. On the one hand, the perforated structure does not affect the internal environment of the reaction chamber 100 and does not require damage to the core insulation layer. The perforation only needs to penetrate the end wall and be sized to fit the signal transmission. By adding a high-temperature resistant, low-thermal-conductivity sealing element (such as a ceramic sleeve) inside the perforation, both smooth signal passage and heat leakage can be ensured, thus balancing the needs of insulation and signal transmission. On the other hand, the stable environment maintained by the insulation wall also reduces the impact of temperature fluctuations on the signal transmitting component 60 and the signal receiving component 70, eliminating the need to deal with drastic temperature changes, extending service life, and achieving a synergistic effect of insulation without hindering signal transmission and airflow without interfering with detection.

[0031] Please see Figure 4 As shown, in some embodiments, the processing chamber 10 includes a first end wall 11 located upstream of the reaction chamber 100 and a second end wall 12 located downstream, as well as a peripheral sidewall 15 connecting the first end wall 11 and the second end wall 12; a first hole 110 and a second hole 120 are provided on the peripheral sidewall 15, a first signal path 111 is located between the first hole 110 and the second hole 120, and respectively connects the first hole 110 and the second hole 120, a signal transmitting component 60 is provided corresponding to the first hole 110, and a signal receiving component 70 is provided corresponding to the second hole 120.

[0032] Please see Figure 2As shown, in some embodiments, the first signal includes a carrier signal, where E is the transmitted signal of the signal transmitting component 60 and R is the received signal of the signal receiving component 70. The control component is configured to analyze the intermittent period of the carrier signal. It should be understood that the carrier signal's distinguishability characteristics are utilized to clearly differentiate it from the environmental signal of the base 20 in a high-temperature environment, thereby enhancing the signal's anti-interference capability and improving detection accuracy. The carrier signal can achieve stable transmission with a small bandwidth and has strong anti-attenuation capability, maintaining waveform integrity even when transmitted through insulation walls and high-temperature paths, reducing misjudgment of intermittent periods due to signal attenuation. The control component can accurately extract the characteristic frequency of the carrier signal through filtering, spectrum analysis, etc., avoiding environmental noise being misjudged as a valid signal, and ensuring more reliable identification of obstruction and on / off states. The control component enhances the time accuracy and regularity of speed detection through intermittent period analysis. The carrier signal processing circuit (such as demodulation and filtering modules) can be integrated into the control component without modifying the internal structure of the reaction cavity 100.

[0033] Please see Figure 5 , Figure 6 , Figure 7 and Figure 11 As shown, in some embodiments, the base 20 has a through second signal path 112, which is parallel to the first signal path 111. The signal transmitting component 60 includes a first transmitter 61 and a second transmitter 62, and the signal receiving component 70 includes a first receiver 71 and a second receiver 72. The first transmitter 61, the first signal path 111, and the first receiver 71 are correspondingly arranged, and the second transmitter 62, the second signal path 112, and the second receiver 72 are correspondingly arranged. Both the first transmitter 61 and the second transmitter 62 are configured to transmit a first signal. The control component is configured to obtain the rotational speed of the shaft 40 based on the first signal received by the first receiver 71 and the first signal received by the second receiver 72. It should be understood that the parameters of the first signal transmitted by the first transmitter 61 and the second transmitter 62 are the same. The parallel layout of the dual-path system ensures that the two signals are affected by environmental interference in a similar manner. For example, temperature fluctuations and airflow disturbances have similar effects on the two paths. The control component can use differential operations, such as using the difference between the two signals (R2-R1), to cancel environmental radiation interference, thereby reducing the synchronous interference of environmental factors on the signals. This results in accurate discontinuous information of the first signal, enhances anti-interference capabilities, and adapts to complex reaction environments, including the detection of rotational speed during the heating and cooling phases of the reaction chamber 100 when the temperature is constantly changing.

[0034] Please see Figure 8 , Figure 9 , Figure 10 and Figure 12As shown, in some embodiments, the base 20 has a third signal path 113, which is configured as a blind aperture. The signal transmitting component 60 includes a first transmitter 61, and the signal receiving component 70 includes a first receiver 71 and a third receiver 73. The first transmitter 61, the first signal path 111, and the first receiver 71 are correspondingly arranged, and the third receiver 73 is correspondingly arranged with the third signal path 113. The first transmitter 61 is configured to transmit a first signal, and the third receiver 73 is configured to receive a signal radiated from the environment within the blind aperture. The control component is configured to obtain the rotational speed of the shaft 40 based on the first signal received by the first receiver 71 and the signal received by the third receiver 73. It should be understood that the third signal path 113 adopts a blind aperture structure, which can reduce the impact on the structural strength of the base 20, reduce heat leakage, help maintain the stability of the temperature field within the reaction chamber 100, and reduce interference to the reaction chamber 100. The third receiver 73 can receive environmental radiation signals from within the blind aperture. The control component compares the signal acquired by the first receiver 71 with the environmental signal acquired by the third receiver 73, accurately removes environmental noise (R3-R1) through differential operations, extracts the discontinuous features of the first signal separately, and obtains the rotational speed of the shaft 40. This enhances the accurate calibration of environmental interference and improves the resolution accuracy of the first signal. The above scheme reduces the complexity of the signal processing algorithm, simplifies the signal processing logic, and improves the system response efficiency.

[0035] It should be understood that the closer the end of the blind hole is to the pivot 40 / blocking member 50, the more accurately the signal received by the third receiver 73 reflects the environmental interference characteristics that the first signal may encounter during transmission.

[0036] Please see Figure 13 As shown, in some embodiments, the stage 30 has a protruding mating part 301 on the side away from the reaction chamber 100. The mating part 301 has an assembly groove 302, and the rotating shaft 40 is partially inserted into the assembly groove 302. It should be understood that the assembly groove 302 on the mating part 301 is used to provide a precise fitting interface for the rotating shaft 40. The rotating shaft 40 and the assembly groove 302 adopt an embedded fitting method. Through the positioning effect of the groove wall, the coaxiality of the rotating shaft 40, the mating part 301, and the stage 30 can be calibrated. At the same time, the fitting structure of the assembly groove 302 increases the contact area between the rotating shaft 40 and the mating part 301, and the groove wall can further restrict the relative sliding between the two through interference fit, key connection, etc., to ensure lossless transmission between the rotating shaft 40 and the stage 30. By setting the connection node between the stage 30 and the rotating shaft 40 on the side of the stage 30 away from the reaction chamber 100, the erosion of the connection node by the high temperature and corrosive gas in the reaction chamber 100 can be reduced, ensuring the transmission accuracy between the rotating shaft 40 and the stage 30, indirectly improving the speed detection accuracy, and ultimately ensuring the epitaxial growth quality of the substrate at a uniform speed.

[0037] Please see Figure 14 As shown, in some embodiments, the stage 30 has a protruding mating part 301 on the side away from the reaction chamber 100. The mating part 301 is connected to the rotating shaft 40, and the rotating shaft 40, the mating part 301, and the stage 30 are integrally formed. It should be understood that the integral connection of the rotating shaft 40, the mating part 301, and the stage 30 results in a more stable stress transmission path, enhancing the stability and durability of the transmission structure. The integral structure can resist loosening of the connection caused by thermal deformation, ensuring that the rotating shaft 40 and the stage 30 always move synchronously.

[0038] Please see Figure 1 , Figure 3 and Figure 4 As shown, in some embodiments, the processing chamber 10 further includes a top plate 13 and a side plate 14, with the top plate 13 spaced apart from the base 20. The side plate 14 is disposed between the base 20 and the top plate 13, and connects the base 20 and the top plate 13 respectively. The base 20, the top plate 13, and the side plate 14 together form a reaction chamber 100. It should be understood that the side plate 14 can be made of high-temperature resistant insulating materials such as ceramics. When the side plate 14 connects the base 20 and the top plate 13, it achieves a mechanical seal through a tight fit to prevent leakage of reaction gas, and also blocks direct heat conduction between the base 20 and the top plate 13. The reaction chamber 100 formed by the three components provides a stable environment for the uniform growth of the epitaxial layer.

[0039] Please see Figure 3 and Figure 4 As shown, in some embodiments, the processing chamber 10 further includes a heat insulation cavity 101, within which the base 20 and the top plate 13 are both disposed. The reaction apparatus also includes a heating coil 80, which is configured as an induction coil wound around the outside of the processing chamber 10, or as a heating coil disposed within the heat insulation cavity 101, located between the base 20 and the bottom wall of the processing chamber 10. It should be understood that the heat insulation cavity 101 and the heating coil 80 synergistically enhance the stability and uniformity of the temperature field. The heat insulation cavity 101 provides a constant temperature barrier for the base 20 and the top plate 13, significantly reducing heat exchange between the reaction chamber 100 and the outside environment, thus concentrating the energy of the heating coil 80 more effectively for heating and maintaining the temperature of the reaction chamber 100.

[0040] When the heating coil 80 is an induction coil, the base 20 heats up by electromagnetic induction, and the heat is evenly conducted from the bottom of the stage 30 to the substrate, avoiding local high temperature. When the heating coil 80 is a heating coil, it can radiate heat to the base 20 at close range, and the temperature control can be more precise.

[0041] This application also provides a semiconductor process apparatus, including the reaction apparatus described in the above embodiments. Therefore, it can possess all the technical features and effects of the aforementioned reaction apparatus, and will not be repeated here.

[0042] In the above embodiments, the descriptions of each embodiment have their own emphasis. Parts not described in detail in a particular embodiment can be referred to in the relevant descriptions of other embodiments. The embodiments, implementation methods, and related technical features of this application can be combined and substituted for each other without conflict.

[0043] The above are merely preferred embodiments of this application and are not intended to limit this application in any way. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of this application without departing from the scope of the technical solution of this application shall still fall within the scope of the technical solution of this application.

Claims

1. A reaction apparatus characterized by comprising: include: Processing chamber (10), the processing chamber (10) having a reaction chamber (100); A base (20) is disposed within the processing chamber (10); A platform (30) is rotatably mounted on the base (20); A signal transmitting component (60) and a signal receiving component (70), wherein the signal transmitting component (60) is configured to transmit a first signal and the signal receiving component (70) is configured to receive the first signal; A rotating shaft (40) is at least partially inserted through the base (20) and rotatably engaged with the base (20). The rotating shaft (40) is connected to the platform (30). A blocking member (50) is provided on the rotating shaft (40). Under the drive of the rotating shaft (40), the blocking member (50) intermittently blocks the first signal during the rotation cycle. The base (20) has a through first signal path (111) and the shielding member (50) blocks the first signal path (111) intermittently during the rotation cycle. A control component configured to obtain the rotational speed of the shaft (40) based on the first signal received by the signal receiving component (70).

2. The reaction apparatus according to claim 1, wherein The processing chamber (10) includes a first end wall (11) located upstream of the reaction chamber (100) and a second end wall (12) located downstream, as well as a peripheral sidewall (15) connecting the first end wall (11) and the second end wall (12); The peripheral sidewall (15) is provided with a first hole (110) and a second hole (120). The first signal path (111) is located between the first hole (110) and the second hole (120) and is connected to the first hole (110) and the second hole (120) respectively. The signal transmitting component (60) is provided corresponding to the first hole (110) and the signal receiving component (70) is provided corresponding to the second hole (120).

3. The reaction apparatus of claim 1, wherein The processing chamber (10) includes a first end wall (11) located upstream of the reaction chamber (100) and a second end wall (12) located downstream; The first end wall (11) has a first hole (110), and the second end wall (12) has a second hole (120). The first hole (110) and the second hole (120) are respectively corresponding to the first signal path (111). The signal transmitting component (60) is set corresponding to the first hole (110), and the signal receiving component (70) is set corresponding to the second hole (120).

4. The reaction apparatus of claim 1, wherein The base (20) has a through second signal path (112), which is parallel to the first signal path (111); The signal transmitting component (60) includes a first transmitter (61) and a second transmitter (62), and the signal receiving component (70) includes a first receiver (71) and a second receiver (72). The first transmitter (61), the first signal path (111) and the first receiver (71) are correspondingly arranged, and the second transmitter (62), the second signal path (112) and the second receiver (72) are correspondingly arranged. Both the first transmitter (61) and the second transmitter (62) are configured to transmit the first signal. The control component is configured to obtain the rotational speed of the shaft (40) based on the first signal received by the first receiver (71) and the first signal received by the second receiver (72).

5. The reactor of claim 1 wherein, The base (20) is provided with a third signal path (113), which is configured as a blind hole; The signal transmitting component (60) includes a first transmitter (61), and the signal receiving component (70) includes a first receiver (71) and a third receiver (73). The first transmitter (61), the first signal path (111), and the first receiver (71) are correspondingly arranged, and the third receiver (73) is correspondingly arranged with the third signal path (113). The first transmitter (61) is configured to transmit the first signal, and the third receiver (73) is configured to receive the signal from ambient radiation within the blind hole. The control component is configured to obtain the rotational speed of the shaft (40) based on the first signal received by the first receiver (71) and the signal received by the third receiver (73).

6. The reactor of claim 1 wherein, The stage (30) has a protruding mating part (301) on the side away from the reaction chamber (100). The mating part (301) is connected to the rotating shaft (40). The rotating shaft (40), the mating part (301) and the stage (30) are integrally formed. Alternatively, the stage (30) may have a mating part (301) protruding on the side away from the reaction chamber (100), the mating part (301) having an assembly groove (302), and the rotating shaft (40) being partially inserted into the assembly groove (302).

7. The reaction apparatus of claim 1, wherein The processing chamber (10) also includes: A top plate (13) is provided at a distance from the base (20); Side plate (14) is disposed between the base (20) and the top plate (13) and connects the base (20) and the top plate (13) respectively. The base (20), the top plate (13) and the side plate (14) together form the reaction chamber (100).

8. The reaction apparatus according to claim 7, characterized in that, The processing chamber (10) also has a heat insulation cavity (101), and the base (20) and the top plate (13) are both disposed in the heat insulation cavity (101); The reaction device further includes a heating coil (80), which is configured as an induction coil and is wound around the outside of the processing chamber (10). Alternatively, the heating coil (80) is configured as a heating coil and is disposed inside the heat preservation cavity (101) and located between the base (20) and the bottom wall of the processing chamber (10).

9. A semiconductor process apparatus, characterized by, It includes the reaction apparatus as described in any one of claims 1 to 8.

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