A silicon carbide wafer notch depth detection device

Abstract

The utility model discloses a silicon carbide wafer Notch depth detection device belongs to silicon carbide wafer detection technical field, including base and digital micrometer, the upper surface of base is connected with two positioning pins, the outer surface of two positioning pins all is connected with needle bearing, the upper surface of base is connected with SIC substrate pad, the upper surface of SIC substrate pad places silicon carbide wafer body, through the positioning pin of base collocation needle bearing, with silicon carbide wafer body flexible contact, both avoid the wafer scratch caused by rigid contact, and can realize wafer fine adjustment through bearing rolling, and the quick alignment Notch groove detection position, greatly reduce the positioning time -consuming, the setting of SIC substrate pad can protect silicon carbide wafer body, and SIC substrate pad adapts wafer characteristic, reduces the displacement error of vibration in detection, and digital micrometer collocation round measuring needle head can closely fit Notch groove, and ensure that depth data reading is accurate.

Description

Technical Field

[0001] This utility model relates to the field of silicon carbide wafer inspection technology, specifically a silicon carbide wafer Notch depth inspection device. Background Technology

[0002] Silicon carbide, as a third-generation semiconductor material, has the characteristics of large bandgap, high breakdown field strength, high thermal conductivity, high electron saturation and strong radiation resistance. It is more suitable for manufacturing high temperature, high frequency, high frequency and radiation-resistant devices, and can be widely used in high voltage, high frequency, high temperature and high reliability fields, including radio frequency communication, radar, satellite, power management, automotive electronics and industrial power electronics.

[0003] The positioning edge or positioning notch of the silicon carbide substrate is mainly used to determine the crystal orientation of the wafer during wafer processing, inspection, or packaging, ensuring directional consistency during device manufacturing. In the manufacturing process, it can help achieve accurate alignment of process steps such as photolithography and etching. However, it occupies a certain wafer edge area. As the wafer size increases, the chip yield will decrease, thereby affecting the depth detection of silicon carbide wafer notch. Those skilled in the art have provided a silicon carbide wafer notch depth detection device to solve the problems mentioned in the background art. Utility Model Content

[0004] The purpose of this invention is to provide a silicon carbide wafer Notch depth detection device to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, this utility model provides the following technical solution:

[0006] A silicon carbide wafer notch depth detection device includes a base and a digital micrometer. Two locating pins are engaged on the upper surface of the base, and needle roller bearings are connected to the outer surfaces of the two locating pins. A SiC substrate is connected to the upper surface of the base, and a silicon carbide wafer body is placed on the upper surface of the SiC substrate. A notch groove is formed on the outer surface of the silicon carbide wafer body. A dial indicator reference base is installed on the upper surface of the base, and a measuring probe is installed on the left side of the digital micrometer.

[0007] As a further improvement of this utility model: a set of mounting holes are provided on the upper surface of the base, and each mounting hole is provided with a mounting screw.

[0008] As a further improvement of this utility model, the upper surface of the dial indicator reference base has two threaded holes, and each of the two threaded holes is provided with a positioning screw.

[0009] As a further improvement of this utility model: the upper surface of the dial indicator reference base has two positioning holes and two connecting holes.

[0010] As a further improvement of this utility model: connecting screws are provided inside the two connecting holes, and the outer surfaces of the two needle roller bearings are in contact with the silicon carbide wafer body.

[0011] As a further improvement of this invention: the measuring needle is circular, and the depth of the Nitch groove is between 1 mm and 1.25 mm.

[0012] Compared with the prior art, the beneficial effects of this utility model are:

[0013] This silicon carbide wafer notch depth detection device uses a base with positioning pins and needle roller bearings to make flexible contact with the silicon carbide wafer body. This avoids wafer scratches caused by hard contact and allows for wafer fine-tuning through bearing rolling, quickly aligning the notch groove detection position and significantly reducing positioning time. The SiC substrate pad protects the silicon carbide wafer body and is adapted to the wafer characteristics, reducing displacement errors caused by vibration during detection. A digital micrometer with a circular measuring probe can closely fit the notch groove, and combined with the stable reference of the micrometer reference base, it ensures accurate depth data reading and controllable error. Attached Figure Description

[0014] Figure 1 This is a top view of a Notch depth detection device for silicon carbide wafers;

[0015] Figure 2 This is a top sectional view of a Notch depth detection device for silicon carbide wafers.

[0016] In the diagram: 1. Base; 2. Dial indicator reference base; 3. Locating pin; 4. Mounting screw; 5. Threaded hole; 6. Locating hole; 7. Locating screw; 8. Digital micrometer; 9. Needle roller bearing; 10. SiC substrate pad; 11. Mounting hole; 12. Connecting hole; 13. Silicon carbide wafer body; 14. Nitch groove; 15. Connecting screw; 16. Measuring probe. Detailed Implementation

[0017] Please see Figures 1-2In this embodiment of the present invention, a silicon carbide wafer Notch depth detection device includes a base 1 and a digital micrometer 8. Two positioning pins 3 are snapped onto the upper surface of the base 1, and needle roller bearings 9 are connected to the outer surfaces of the two positioning pins 3. A SiC substrate pad 10 is connected to the upper surface of the base 1, and a silicon carbide wafer body 13 is placed on the upper surface of the SiC substrate pad 10. A Nitch groove 14 is formed on the outer surface of the silicon carbide wafer body 13. A dial indicator reference base 2 is installed on the upper surface of the base 1, and a measuring probe 16 is installed on the left side of the digital micrometer 8. This device not only protects the silicon carbide wafer body 13, but also allows the digital micrometer 8 to be connected to a PC via a data cable. Furthermore, it reduces the waste of effective area and helps to improve chip yield.

[0018] The upper surface of the base 1 is provided with a set of mounting holes 11, and each mounting hole 11 is provided with a mounting screw 4. The upper surface of the dial indicator reference base 2 is provided with two threaded holes 5, and each of the two threaded holes 5 is provided with a positioning screw 7. The upper surface of the dial indicator reference base 2 is provided with two positioning holes 6 and two connection holes 12, which can facilitate people to disassemble and maintain the equipment.

[0019] Both connecting holes 12 are equipped with connecting screws 15. The outer surfaces of both needle roller bearings 9 are in contact with the silicon carbide wafer body 13. The measuring needle 16 is circular. The depth of the Nitch groove 14 is between 1 mm and 1.25 mm, which can make the measurement data of the Nitch groove 14 more accurate.

[0020] The working principle of this utility model is as follows: First, the base 1 can be installed in the usage position. Then, the dial indicator reference base 2 can be connected to the base 1. Subsequently, the digital micrometer 8 can be connected to the dial indicator reference base 2.

[0021] Next, the silicon carbide substrate can be placed on the reference base plate 1 and rest against the outer circle of the two needle roller bearings 9. The unnotched position of the outer circle of the substrate is pressed against the measuring needle 16 of the digital micrometer, and the digital micrometer is zeroed. Then, the substrate is slowly rotated to move the digital micrometer needle into the Nitch groove 14 and read the digital micrometer value, which is the depth of the Nitch groove 14. The setting of the SiC substrate pad 10 can prevent the silicon carbide wafer body 13 from rubbing against the base 1 during rotation measurement, which would cause scratches or metal residue on the product surface and affect subsequent processing.

[0022] The above description is merely a preferred embodiment of this utility model, but the scope of protection of this utility model is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the technical scope disclosed in this utility model, based on the technical solution and inventive concept of this utility model, should be included within the scope of protection of this utility model. It is obvious to those skilled in the art that this utility model is not limited to the details of the above exemplary embodiments, and that it can be implemented in other specific forms without departing from the spirit or basic characteristics of this utility model. Therefore, the embodiments should be considered exemplary and non-limiting in all respects. The scope of this utility model is defined by the appended claims rather than the foregoing description, and therefore all variations falling within the meaning and scope of equivalent elements of the claims are intended to be included within this utility model. No reference numerals in the claims should be construed as limiting the scope of the claims.

Claims

1. A silicon carbide wafer Notch depth detection device, characterized in that, The device includes a base (1) and a digital micrometer (8). Two positioning pins (3) are snapped onto the upper surface of the base (1). The outer surfaces of the two positioning pins (3) are connected to needle roller bearings (9). A SiC substrate pad (10) is connected to the upper surface of the base (1). A silicon carbide wafer body (13) is placed on the upper surface of the SiC substrate pad (10). A Nitch groove (14) is opened on the outer surface of the silicon carbide wafer body (13). A dial indicator reference base (2) is installed on the upper surface of the base (1). A measuring needle (16) is installed on the left side of the digital micrometer (8).

2. The apparatus for detecting a Notch depth of a silicon carbide wafer according to claim 1, wherein The upper surface of the base (1) is provided with a set of mounting holes (11), and each mounting hole (11) is provided with a mounting screw (4).

3. The apparatus for detecting the Notch depth of a silicon carbide wafer according to claim 1, wherein The upper surface of the dial indicator reference base (2) has two threaded holes (5), and each of the two threaded holes (5) is provided with a positioning screw (7).

4. The apparatus for detecting the Notch depth of a silicon carbide wafer according to claim 1, wherein The upper surface of the dial indicator reference base (2) has two positioning holes (6) and two connecting holes (12).

5. The apparatus for detecting the Notch depth of a silicon carbide wafer according to claim 4, wherein Both of the connecting holes (12) are equipped with connecting screws (15), and the outer surfaces of both needle roller bearings (9) are in contact with the silicon carbide wafer body (13).

6. The apparatus for detecting a Notch depth of a silicon carbide wafer according to claim 1, wherein The measuring needle (16) is circular, and the depth of the Nitch groove (14) is between 1 mm and 1.25 mm.

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