Insulation structure of gate pole assembly and thyristor module

Abstract

The utility model relates to power semiconductor device technical field discloses a kind of insulation structure and thyristor module of gate electrode assembly.The insulation structure includes multiple pole pieces, and each pole piece includes crimping part and leading-out part.A through-hole is provided on the crimping part adjacent to the gate electrode assembly, and the through-hole is provided above or below the corresponding gate electrode assembly, and an insulating pad made of insulating material is embedded in the through-hole.The insulation structure improves the insulation performance between the gate electrode assembly and the common electrode by opening a through-hole in the corresponding position of the crimping part adjacent to the gate electrode assembly and setting an insulating pad in the through-hole, preventing the insulation between the gate electrode assembly and the common electrode from being broken down under high voltage, and thus improving the reliability and safety of the thyristor module in operation and prolonging the service life of the thyristor module.

Description

Technical Field

[0001] This utility model relates to the field of power semiconductor device technology, specifically to an insulating structure for a gate assembly and a thyristor module. Background Technology

[0002] Currently, press-fit thyristor modules typically consist of a heat sink, an insulating thermally conductive sheet, a housing, two semiconductor chips, two clamping blocks, three electrodes, a gate assembly, and some fasteners. Although the gate assembly of existing thyristor modules already incorporates an insulating structure in its packaging, in some high-voltage scenarios, this insulation structure can still be broken down by high voltage, leading to arcing between the gate assembly and the common electrode, potentially damaging the thyristor module. Therefore, a new insulating structure for the gate assembly is needed to further improve the reliability of thyristor modules. Utility Model Content

[0003] In order to overcome the shortcomings of the prior art, the purpose of this utility model is to provide an insulation structure for a gate assembly that can prevent arcing between the gate assembly and the common electrode due to insulation breakdown, thereby improving the reliability of the thyristor module.

[0004] To solve the above problems, the technical solution adopted by this utility model is as follows: an insulating structure for a gate electrode assembly, comprising multiple electrode plates, each electrode plate comprising a crimping portion and a lead-out portion, wherein the crimping portion adjacent to the gate electrode assembly is provided with a through hole, the through hole being located directly above or directly below the corresponding gate electrode assembly, and an insulating pad made of insulating material is embedded in the through hole.

[0005] Compared with the prior art, the beneficial effects of this utility model are as follows: by opening through holes at the corresponding positions of the pressing parts of the electrode plates adjacent to the gate assembly, and setting an insulating pad in the through holes, the insulation strength between the pressing parts of the gate assembly and the electrode plates is further increased, thereby avoiding arcing between the gate assembly and the common electrode, and improving the reliability and service life of the thyristor module.

[0006] The aforementioned gate assembly insulation structure includes a common electrode and a first bent electrode. The common electrode includes a first lead-out portion, a first crimping portion, and a second crimping portion connected in sequence. The first crimping portion is located below the first chip, and the second crimping portion is located above the second chip. The first bent electrode includes a second lead-out portion and a third crimping portion connected in sequence. The third crimping portion is located above the first chip. A first through-hole and a second through-hole are respectively provided in the center of the second and third crimping portions. The first through-hole is located directly above the gate assembly of the second chip, and the second through-hole is located directly above the gate assembly of the first chip. The insulating pad is embedded in both the first and second through-holes.

[0007] In the above-mentioned gate assembly insulation structure, the first crimping portion, the second crimping portion, and the first through hole are all circular, and the center of the second through hole is concentric with the center of the first crimping portion.

[0008] In the above-mentioned gate assembly insulation structure, both the third crimping portion and the second through hole are circular, and the center of the second through hole is concentric with the center of the third crimping portion.

[0009] The insulating structure of the gate assembly described above uses a silicone pad as the insulating pad.

[0010] The insulation structure of the gate assembly described above has a horizontal bending groove provided on the connection between the third crimping part and the second lead-out part.

[0011] A thyristor module includes the insulation structure of the gate component described above.

[0012] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments. Attached Figure Description

[0013] Figure 1 This is a schematic diagram of the electrode structure according to an embodiment of the present invention.

[0014] Figure 2 This is a schematic diagram of the insulation structure of the gate assembly according to an embodiment of the present invention.

[0015] Figure 3 This is a schematic diagram of the structure of the common electrode sheet in an embodiment of this utility model.

[0016] Figure 4 This is a cross-sectional schematic diagram of the internal structure of the thyristor module according to an embodiment of the present invention.

[0017] Figure 5 This is a schematic diagram of the structure of the first bent electrode sheet after bending, according to an embodiment of the present invention.

[0018] Explanation of icon numbers: 100 Common electrode, 110 First lead-out portion, 120 First crimp portion, 130 Second crimp portion, 131 First through hole, 132 Insulating pad, 200 First bent electrode, 210 Second lead-out portion, 220 Third crimp portion, 221 Second through hole, 230 Bending groove, 300 Second bent electrode, 400 First chip, 410 First gate assembly, 500 Second chip, 510 Second gate assembly. Detailed Implementation

[0019] The embodiments of this utility model are described in detail below, with reference to Figures 1 to 4 This invention provides an insulation structure for a gate assembly, disposed on adjacent electrodes in a thyristor module. Each electrode includes a lead-out portion for external electrical connection and a crimping portion for crimping with a semiconductor chip. The crimping portions adjacent to the gate assembly have through holes positioned directly above or below the corresponding gate assembly, and an insulating pad 132 made of insulating material is embedded within the through holes. This insulation structure, by creating through holes at corresponding positions on the crimping portions of the adjacent electrodes and placing the insulating pad 132 within the through holes, improves the insulation performance between the gate assembly and the crimping portions, preventing arcing caused by insulation breakdown between the gate assembly and the common electrode under high voltage, thereby improving the reliability and lifespan of the thyristor module.

[0020] Reference Figure 4 In this embodiment, taking the layout where both semiconductor chips are front-mounted (i.e., molybdenum face down) as an example, this layout ensures that the distances between the two chips and the heat sink are almost the same, guaranteeing good heat dissipation for both chips. The insulating electrode structure includes a common electrode 100, a first bent electrode 200, and a second bent electrode 300, generally made of copper or a copper alloy. The common electrode 100 includes a first lead-out portion 110, a first crimping portion 120, and a second crimping portion 130 connected in sequence. The first crimping portion 120 is located below the first chip 400, and the second crimping portion 130 is located above the second chip 500. Since the gate assembly is usually located on the front side of the semiconductor chip, the common electrode 100 only has a first through-hole 131 and an insulating pad 132 above the second gate assembly 510 of the second chip 500. Figure 3As shown. Similarly, the third pressing portion 220 of the first bent electrode 200 is located above the first chip 400, and the fourth pressing portion of the second bent electrode 300 is located below the second chip 500. Therefore, only the second through hole 221 and the insulating pad 132 need to be provided on the third pressing portion 220. The first through hole 131 is located directly above the second gate assembly 510, and the second through hole 221 is located directly above the first gate assembly 410 on the first chip 400. It can be understood that the size of the first through hole 131 and the second through hole 221 should be slightly larger than the projected size of the first gate assembly 410 and the second gate assembly 510 on the horizontal plane, such as... Figure 4 As shown, this ensures that the size of the insulating pad 132 completely covers the corresponding gate assembly, further improving the insulation performance between the gate assembly and the common electrode. The insulating pad 132 can be made of insulating materials such as rubber or silicone. In this embodiment, the insulating pad 132 is a silicone pad.

[0021] Reference Figures 1 to 3 In practice, since semiconductor chips and gate components are typically disc-shaped or cylindrical, the first pressing portion 120, the second pressing portion 130, the third pressing portion 220, the fourth pressing portion, the first through-hole 131, and the second through-hole 221 are all circular. Furthermore, since the gate of a semiconductor chip is usually located in the center of the chip, the centers of the first through-hole 131 and the second pressing portion 130 coincide, and the centers of the second through-hole 221 and the third pressing portion 220 coincide.

[0022] Reference Figure 1 In this embodiment, the first lead-out portion 110 of the common electrode 100 is horizontal. The first bent electrode 200 and the second bent electrode 300 have similar structures, both being "L"-shaped in the lateral direction. Wiring holes for easy wiring and installation are provided on the first lead-out portion 110, the second lead-out portion 210, and the third lead-out portion of the third bent electrode. The common electrode 100, the first bent electrode 200, and the second bent electrode 300 are all integrally formed structures. In some scenarios, to facilitate the installation and wiring of the thyristor module, the second lead-out portion 210 and the third lead-out portion need to be bent horizontally, such as... Figure 4 and Figure 5 As shown. To facilitate bending of the second lead-out portion 210 and the third lead-out portion, bending grooves 230 are provided on the connecting portions between the second lead-out portion 210 and the third crimping portion 220, and on the connecting portions between the third lead-out portion and the fourth crimping portion. The bending grooves 230 are horizontally positioned on the surface of the connecting portions. By providing the bending grooves 230, the thickness at the bending grooves 230 is reduced, making it easier for the user to bend the second lead-out portion 210 and the third lead-out portion horizontally along the bending grooves 230. (Refer to...) Figure 1 and Figure 5 In this embodiment, the bending groove 230 is formed on the inward-facing side of the connecting part.

[0023] Reference Figure 4 Based on the same inventive concept, this utility model embodiment also provides a thyristor module including the above-mentioned gate component insulation structure. Through the above-mentioned insulation structure, the insulation performance between the gate component and the common electrode is improved, arcing between the gate component and the common electrode is avoided, the reliability and safety of the thyristor module are improved, and the service life of the thyristor module is extended.

[0024] It should be noted that in the description of this utility model, any descriptions of orientation, such as up, down, front, back, left, right, etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed or operated in a specific orientation, and should not be construed as a limitation of this utility model.

[0025] In the description of this utility model, "several" means one or more, "more than" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. If "first" or "second" is mentioned, it is only for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0026] In the description of this utility model, unless otherwise explicitly defined, terms such as "setting," "installation," and "connection" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this utility model in conjunction with the specific content of the technical solution.

[0027] The above embodiments are merely preferred embodiments of this utility model and should not be construed as limiting the scope of protection of this utility model. Any non-substantial changes and substitutions made by those skilled in the art based on this utility model shall fall within the scope of protection claimed by this utility model.

Claims

1. An insulating structure of a gate electrode assembly comprising a plurality of electrode pieces, each of said electrode pieces comprising a press-bonding portion and a lead-out portion, characterized in that, The crimping portion adjacent to the gate assembly has a through hole, which is located directly above or below the corresponding gate assembly. An insulating pad (132) made of insulating material is embedded in the through hole. The electrode includes a common electrode (100) and a first bent electrode (200). The common electrode (100) includes a first lead-out portion (110), a first crimping portion (120), and a second crimping portion (130) connected in sequence. The first crimping portion (120) is located below the first chip (400), and the second crimping portion (130) is located above the second chip (500). The first bent electrode (200) includes a first lead-out portion (110), a first crimping portion (120), and a second crimping portion (130) connected in sequence. The second lead-out portion (210) and the third crimp portion (220) are connected. The third crimp portion (220) is disposed above the first chip (400). The second crimp portion (130) and the third crimp portion (220) are respectively provided with a first through hole (131) and a second through hole (221). The first through hole (131) is located directly above the second gate component (510) of the second chip (500), and the second through hole (221) is located directly above the first gate component (410) of the first chip (400). The insulating pad (132) is embedded in both the first through hole (131) and the second through hole (221).

2. The insulation structure of a gate electrode assembly according to claim 1, wherein The first crimping part (120), the second crimping part (130) and the first through hole (131) are all circular, and the center of the second through hole (221) is concentric with the center of the first crimping part (120).

3. The insulation structure of a gate electrode assembly according to claim 2, wherein Both the third crimping part (220) and the second through hole (221) are circular, and the center of the second through hole (221) is concentric with the center of the third crimping part (220).

4. The insulation structure of a gate electrode assembly according to any one of claims 1 to 3, wherein The insulating pad (132) is a silicone pad.

5. The insulation structure of the gate assembly according to any one of claims 1 to 3, characterized in that, A horizontal bending groove (230) is provided on the connection between the third crimping part (220) and the second lead-out part (210).

6. A silicon controlled rectifier module characterized by Including the insulation structure of the gate assembly according to any one of claims 1 to 5.

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