A high resistance double-sided antistatic film

Abstract

The utility model provides a kind of double-sided antistatic film of high resistance, including substrate layer, etching surface, positive composite antistatic layer and back composite antistatic layer, the positive surface and back surface of the substrate layer are the etching surface, and the etching surface of positive, back is respectively provided with positive composite antistatic layer and back composite antistatic layer, the positive composite antistatic layer and back composite antistatic layer structure are same;The utility model is attached by composite etching enhancement plating film layer, three-layer antistatic structure accurately controls resistance, transition layer improves compatibility and life, double-sided design adapts multiple scenes, and practicality is strong.

Description

Technical Field

[0001] This invention belongs to the field of antistatic film technology, and particularly relates to a high-resistance double-sided antistatic film. Background Technology

[0002] With the rapid development of fields such as electronic information, optical display, and medical devices, the performance requirements for electrostatic discharge (ESD) protection materials are becoming increasingly stringent. High-resistivity double-sided antistatic films, as key protective materials, must simultaneously meet the requirements of "bidirectional antistatic properties" and "surface resistivity stable at 10 Ω·cm". 6 -10 11 The core requirements include "Ω / sq", "excellent mechanical strength", and "strong interlayer bonding".

[0003] In the prior art, antistatic films have the following drawbacks: Insufficient interlayer bonding: Due to the smooth surface or poor material compatibility of the substrate and the antistatic layer (such as vapor-deposited metal oxide layer or coated organic antistatic coating), delamination and peeling are likely to occur during friction and bending, resulting in failure of antistatic performance. Poor resistance stability: The resistance of a single vapor-deposited layer is prone to local deviations due to thickness fluctuations and pinhole defects. The resistance of a single organic coating is significantly affected by environmental humidity and temperature, making it difficult to maintain a stable high resistance range for a long time. Insufficient weather resistance: Inorganic vapor-deposited layers (such as ITO) are easily affected by moisture and chemical corrosion, leading to oxidation and failure. Organic coatings are prone to wear failure, resulting in a short antistatic life.

[0004] Therefore, it is essential to invent a high-resistance double-sided antistatic film. Utility Model Content

[0005] To solve the above-mentioned technical problems, this utility model provides a high-resistance double-sided antistatic film, including a substrate layer, an etched surface, a positive composite antistatic layer, and a back composite antistatic layer. The front and back surfaces of the substrate layer are the etched surfaces, and the positive and back etched surfaces are respectively provided with a positive composite antistatic layer and a back composite antistatic layer. The positive composite antistatic layer and the back composite antistatic layer have the same structure.

[0006] Preferably, the front and back surfaces of the substrate layer are the upper and lower surfaces, respectively. The surfaces are first formed by chemical etching to create micron-level trenches, and then by plasma etching to create nano-level protrusions, thus forming a rough etched surface.

[0007] Preferably, the positive composite antistatic layer or the back composite antistatic layer disposed on the etched surface includes a coating layer, a transition layer and an antistatic coating. The coating layer is deposited on the etched surface corresponding to the substrate layer, and a transition layer is disposed on the coating layer, and an antistatic coating is disposed on the transition layer.

[0008] Preferably, the coating layer is a layer structure formed by vapor deposition of inorganic materials, and the transition layer is located between the coating layer and the antistatic coating.

[0009] Preferably, the transition layer is formed by coating an extremely thin cross-sectional modified layer structure between the coating layer and the antistatic coating, and the antistatic coating is formed on the transition layer by coating.

[0010] Compared with the prior art, the present invention has the following beneficial effects: The front and back surfaces of the substrate layer of this invention are formed by chemical etching and plasma etching to create a composite rough etched surface with "micron-level trenches and nano-level protrusions". This provides a mechanical anchoring foundation for the subsequent vapor-deposited coating layer and greatly enhances the adhesion between the coating layer and the substrate. At the same time, the transition layer effectively solves the compatibility problem between the inorganic coating layer and the organic antistatic coating through interface modification, further improving the overall interlayer bonding strength and preventing delamination and peeling during use.

[0011] This utility model's front and back composite antistatic layer adopts a three-layer structure of "coating layer + transition layer + antistatic coating": the inorganic coating layer (such as ITO, AZO) provides a stable basic antistatic framework, and the resistance value is precisely controlled through the vapor deposition process; the transition layer fills the pinhole defects of the coating layer and buffers the influence of environmental factors on the resistance value; the antistatic coating achieves high resistance value precise calibration through formula adjustment.

[0012] The design of the transition layer in this invention not only plays a role in interface bonding, but also isolates the coating layer from the erosion of water vapor and oxygen, while reducing direct frictional contact between the antistatic coating and the outside world, significantly extending the antistatic life (accelerated aging tests show that its lifespan is 2-3 times longer than that of traditional single-coating structures); in addition, the double-sided symmetrical design ensures consistent bidirectional antistatic performance of the film material, making it suitable for bidirectional protection scenarios such as electronic component packaging and optical display protection, and highly practical. Attached Figure Description

[0013] Figure 1 This is a schematic diagram of the overall layered structure of this utility model.

[0014] Figure 2 This is a schematic diagram of the layered structure of the positive composite antistatic layer of this utility model.

[0015] In the picture: Substrate layer 1, etched surface 2, positive composite antistatic layer 3, coating layer 31, transition layer 32, antistatic coating 33, back composite antistatic layer 4. Detailed Implementation

[0016] To enable those skilled in the art to better understand the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the protection scope of the present invention.

[0017] In the description of the embodiments, it should be noted that the terms "upper," "lower," "inner," "outer," "front end," "rear end," "both ends," "one end," and "the other end," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the present invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. In the description of the utility model, it should be noted that unless otherwise explicitly specified and limited, the terms "installed," "equipped with," "connected," etc., should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be a connection within two components. Those skilled in the art can understand the specific meaning of the above terms in the present utility model based on the specific circumstances.

[0018] As attached Figure 1 To be continued Figure 2 As shown: This utility model provides a high-resistance double-sided antistatic film, including a substrate layer 1, an etched surface 2, a positive composite antistatic layer 3, and a back composite antistatic layer 4. The front and back surfaces of the substrate layer 1 are the etched surface 2, and the positive and back etched surfaces 2 are respectively provided with the positive composite antistatic layer 3 and the back composite antistatic layer 4. The positive composite antistatic layer 3 and the back composite antistatic layer 4 have the same structure.

[0019] Furthermore, the substrate layer 1 is made of a PET (polyethylene terephthalate) film (model PET-125) with a thickness of 25-100 μm. Its front and back surfaces (i.e., upper and lower surfaces) are treated with a two-step etching process: The first step involves chemical etching using a 5%-8% sodium hydroxide solution. By controlling the etching time, micron-level trenches with a depth of 1-3 μm and a width of 5-10 μm are formed on the surface. These trenches have a parallel, grid-like structure, with a spacing of 10-20 μm between adjacent trenches. The second step uses a plasma etching device (model PE-300) to treat the chemically etched surface, forming nanoscale protrusions with a height of 200-500 nm on the inner walls and bottom of the micron-level trenches, ultimately forming an etched surface 2 with a roughness (Ra) of 0.8-1.5 μm. The synergistic effect of the two etching processes increases the contact area between the substrate layer 1 and the subsequent coating layer 31, significantly improving interlayer adhesion through a mechanical anchoring effect.

[0020] Furthermore, the positive composite antistatic layer 3 and the back composite antistatic layer 4 have a symmetrical structure. A coating layer 31 is deposited on the etched surface 2 using a magnetron sputtering evaporation equipment (model MSP-500). The coating layer 31 completely covers the micron-level trenches and nano-level protrusions of the etched surface 2, with a thickness controlled at 50-100 nm, and forms a conformal coverage following the concave-convex shape of the etched surface 2. Subsequently, a transition layer 32 is coated on the surface of the coating layer 31 using a microgravure coating machine (model MC-200). The transition layer 32 has a thickness of 10-30 nm and uniformly fills the tiny pits left on the surface of the coating layer 31 due to etching. Finally, an antistatic coating is coated on the transition layer 32 using a slot coater (model SL-300) to form an antistatic coating 33 with a thickness of 1-3 μm. The three layers are stacked sequentially to form a continuous and complete composite antistatic layer. The coating layer 31 provides the basic framework for antistatic performance, the transition layer 32 realizes interface modification and defect filling, and the antistatic coating 33 precisely controls the high resistance characteristics. The three work together to ensure stable antistatic performance.

[0021] Furthermore, indium tin oxide (ITO) is used as the evaporation material for the coating layer 31. A continuous thin film with semiconductor properties is formed on the etched surface 2 by magnetron sputtering, and its initial sheet resistance is controlled to be 10 Ω. 8 -10 9The resistance is measured in Ω / sq, and precise control of the resistance is achieved by adjusting the evaporation time (10-20 seconds). The transition layer 32 is a mixed solution of organosilane coupling agent (model KH-550) and nano-SiO2 (particle size 20-50nm) (mass ratio 10:1, solvent is anhydrous ethanol). It forms an interface layer between the coating layer 31 and the antistatic coating 33 through a coating process: its bottom is chemically bonded to the hydroxyl groups of the ITO coating layer 31 through Si-O bonds, and its top is hydrogen-bonded to the organic resin of the antistatic coating 33 through amino groups. This increases the peel strength between the coating layer 31 and the antistatic coating 33 to ≥5N / cm (test standard ASTM D3359), solving the problem of poor inorganic-organic interface compatibility.

[0022] Furthermore, the transition layer 32 is coated using a micro-gravure roller coating process, forming a uniform film with a thickness of 10-30 nm. Its cross-section exhibits a continuous "fill-and-cover" morphology, filling in pinholes and micro-protrusions on the surface of the coating layer 31 caused by vapor deposition. This reduces the surface smoothness (Ra) from 0.5-0.8 μm in the coating layer 31 to 0.1-0.2 μm, providing a smooth substrate for the subsequent uniform coating of the antistatic coating 33. The antistatic coating 33 uses water-based polyurethane resin (model WPU-602) as the base material, adding conductive polymer polyaniline and carbon nanotubes. After mixing, it is dispersed by high-speed shearing to form a uniform dispersion, which is then applied to the surface of the transition layer 32 through slits to form a coating with a thickness of 1-3 μm. The sheet resistance of the antistatic coating 33 is synergistically controlled by the concentrations of polyaniline and carbon nanotubes, ultimately stabilizing the overall sheet resistance of the composite antistatic layer at 10 Ω·cm. 8 -10 11 Ω / sq, meeting the requirements for high resistance and anti-static properties.

[0023] The working principle is as follows: First, the substrate layer 1 serves as the supporting framework of the entire film. The etched surface 2, formed by the two-step etching process, provides a physical adhesion basis for the subsequent antistatic layer. The rough structure composed of its micron-level trenches and nano-level protrusions enhances the bonding strength with the coating layer 31 through the mechanical anchoring effect, ensuring that the antistatic layer is not easy to fall off during long-term use.

[0024] Secondly, the front and back composite antistatic layer achieves high-resistance antistatic function through "three-layer synergy": the coating layer 31, as an inorganic conductive framework, utilizes the semiconductor properties of indium tin oxide to form a stable charge conduction path, providing basic support for antistatic performance; the transition layer 32 connects the coating layer 31 and the antistatic coating layer 33 through chemical bonding, which not only solves the interface compatibility problem between inorganic and organic materials, but also fills the tiny defects in the coating layer, avoiding local interruption of charge conduction; the antistatic coating layer 33, as an organic conductive regulating layer, precisely controls the overall resistance value through the synergistic effect of conductive polymers and carbon nanotubes, stabilizing the surface resistance in the high resistance range, while utilizing the flexibility of organic materials to alleviate the stress of the film during bending and protect the underlying structure.

[0025] Finally, the double-sided symmetrical antistatic layer design ensures that static charge can be effectively released on both sides of the membrane: when the membrane comes into contact with or rubs against external objects and generates static electricity, the charge is quickly conducted to the transition layer 32 through the antistatic coating 33, and then evenly dispersed and slowly released into the environment through the coating layer 31. This avoids the accumulation of static electricity and prevents sparks or interference caused by the rapid release of charge due to the high resistance characteristics, thereby achieving bidirectional and stable high-resistance electrostatic protection.

[0026] Any technical solution that achieves the above-mentioned technical effects by utilizing the technical solution described in this utility model, or by designing a similar technical solution inspired by the technical solution described in this utility model, falls within the protection scope of this utility model.

Claims

1. A high-resistance double-sided antistatic film, characterized in that, It includes a substrate layer (1), an etched surface (2), a positive composite antistatic layer (3) and a back composite antistatic layer (4). The front and back surfaces of the substrate layer (1) are the etched surface (2). The front and back etched surfaces (2) are respectively provided with a positive composite antistatic layer (3) and a back composite antistatic layer (4). The positive composite antistatic layer (3) and the back composite antistatic layer (4) have the same structure.

2. The high-resistance double-sided antistatic film as described in claim 1, characterized in that: The front and back surfaces of the substrate layer (1) are the upper and lower surfaces, respectively. The surface is first formed by chemical etching to form micron-level trenches, and then by plasma etching to form nano-level protrusions, thus forming the rough etched surface (2).

3. The high-resistance double-sided antistatic film as described in claim 2, characterized in that: The positive composite antistatic layer (3) or the back composite antistatic layer (4) provided on the etched surface (2) includes a coating layer (31), a transition layer (32) and an antistatic coating (33). The coating layer (31) is deposited on the etched surface (2) corresponding to the substrate layer (1), and a transition layer (32) is provided on the coating layer (31). An antistatic coating (33) is provided on the transition layer (32).

4. The high-resistance double-sided antistatic film as described in claim 3, characterized in that: The coating layer (31) is a layer structure formed by vapor deposition of inorganic materials, and the transition layer (32) is located between the coating layer (31) and the antistatic coating (33).

5. The high-resistance double-sided antistatic film as described in claim 4, characterized in that: The transition layer (32) is formed by coating an extremely thin cross-sectional modified layer structure between the coating layer (31) and the antistatic coating (33), and the antistatic coating is formed on the transition layer (32) by coating.

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