Composite carrier plate for silicon wafer coating and coating equipment
Patent Information
- Application Number
- CN202521775459.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-08-20
- Publication Date
- 2026-09-22
- Estimated Expiration
- 2035-08-20
AI Technical Summary
[0007]本实用新型旨在解决上述技术问题,即,解决现有技术中的硅片镀膜用载板易发生热应力形变而引起镀膜绕镀现象和宕机事故的发生、且生产成本较高的问题
[0019]1、本实用新型所提供的硅片镀膜用复合载板,将非金属应用于镀膜设备中,使用不锈钢金属和碳纤维非金属进行界面复合,不锈钢层提供刚性支撑,多层碳纤维层减轻重量并提升抗疲劳性能,且碳纤维的低热膨胀系数可降低载板整体的热膨胀系数,使其接近硅片(约2.6×10-6/℃),减少高温工艺中的热应力,从而解决了传统金属载板受热变形较大而引起的镀膜绕镀现象、影响硅片镀膜效果、设备正常运行的问题,提高了硅片良率,减少了设备宕机情况,同时降低了生成成本。
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Figure CN224784290U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of solar cell production technology, specifically providing a composite carrier plate for silicon wafer coating and coating equipment. Background Technology
[0002] PECVD carrier is an important component of silicon wafer coating equipment. Its working principle is as follows: the silicon wafer to be coated is placed flat on the carrier and transported to the plasma chamber of the silicon wafer coating equipment by a transfer component, and then coated under certain process conditions.
[0003] Currently, most PVD equipment still uses stainless steel as the carrier material, which consumes a large amount of steel in its manufacturing process. Furthermore, the thermal stress generated by the metal is difficult to release, leading to stress concentration and deformation of the carrier material. This increases the defect rate of silicon wafers, significantly reducing the coating effect of the cells. In addition, deformed carriers create deformation gaps at the cell assembly points, which can cause phenomena such as wrap-around plating during cell coating, resulting in silicon wafer deformation and other issues. Moreover, deformed carriers are prone to getting stuck in the coating equipment cavity during transport, causing serious downtime and impacting production efficiency.
[0004] CN207038493U discloses a carbon fiber solar cell silicon wafer carrier. Although carbon fiber has the advantage of high strength, it has relatively poor toughness and is a brittle material. When subjected to impact, compression, or long-term repeated loads, it is prone to cracks or even breakage, affecting the service life and stability of the carrier, and may lead to problems such as silicon wafer falling off or being damaged.
[0005] CN202246857U discloses a carbon-carbon substrate for silicon wafer coating, but the production cost is relatively high.
[0006] Therefore, the industry urgently needs a new type of carrier plate structure that can improve its quality while reducing production costs, and at the same time reduce thermal stress deformation to reduce coating wrapping phenomenon, reduce downtime accidents, and ensure normal process of coating equipment. Utility Model Content
[0007] The present invention aims to solve the above-mentioned technical problems, namely, to solve the problems of the existing technology that the carrier plate used for silicon wafer coating is prone to thermal stress deformation, which causes coating wrapping phenomenon and downtime accidents, and the production cost is high.
[0008] In a first aspect, the present invention provides a composite carrier for silicon wafer coating, comprising a carrier frame body and silicon wafer holes; the carrier frame body comprises a first stainless steel layer, a second stainless steel layer and multiple carbon fiber layers located between the two; the first stainless steel layer is connected to adjacent carbon fiber layers, two adjacent carbon fiber layers, and the second stainless steel layer is connected to adjacent carbon fiber layers by an adhesive layer.
[0009] In the preferred embodiment of the composite carrier for silicon wafer coating described above, the adhesive layer is made of silanized CNTs / epoxy resin composite material.
[0010] In the preferred embodiment of the composite carrier for silicon wafer coating described above, the material of each carbon fiber layer is silanized carbon fiber.
[0011] In the preferred embodiment of the composite carrier for silicon wafer coating described above, the surfaces of the first stainless steel layer and the second stainless steel layer that are in contact with the adjacent carbon fiber layer have micro-pits.
[0012] In the preferred embodiment of the composite carrier for silicon wafer coating described above, the micro-pits cover 80% to 90% of the surface of the stainless steel layer; and / or, the depth of the micro-pits is 0.5 μm to 2 μm.
[0013] In the preferred embodiment of the composite carrier for silicon wafer coating described above, the carbon fiber layer consists of at least two layers.
[0014] In the preferred embodiment of the composite carrier for silicon wafer coating described above, the carbon fiber layer consists of 2 to 4 layers.
[0015] In the preferred embodiment of the composite carrier for silicon wafer coating described above, the total thickness of the multiple carbon fiber layers is 0.7 mm to 1.4 mm.
[0016] In the preferred embodiment of the composite carrier for silicon wafer coating described above, the silicon wafer holes penetrate the carrier frame body in the thickness direction and are distributed in a regular array on the carrier frame body; and / or, the shape of the silicon wafer holes is adapted to the silicon wafer to be supported; and / or, the spacing between the silicon wafer holes is 2mm to 4mm.
[0017] In a second aspect, the present invention provides a coating equipment, wherein the coating equipment includes the aforementioned composite carrier plate for silicon wafer coating.
[0018] The composite carrier and coating equipment for silicon wafer coating of this utility model have at least one or more of the following technical effects:
[0019] 1. The composite carrier plate for silicon wafer coating provided by this utility model applies non-metallic materials to the coating equipment. It uses stainless steel metal and carbon fiber non-metal for interfacial composite bonding. The stainless steel layer provides rigid support, while multiple carbon fiber layers reduce weight and improve fatigue resistance. Furthermore, the low coefficient of thermal expansion of carbon fiber reduces the overall coefficient of thermal expansion of the carrier plate, making it close to that of a silicon wafer (approximately 2.6 × 10⁻⁶). -6 / ℃), reducing thermal stress in high-temperature processes, thereby solving the problems of coating wrapping caused by large thermal deformation of traditional metal carrier plates, affecting silicon wafer coating effect and normal equipment operation, improving silicon wafer yield, reducing equipment downtime, and reducing production costs.
[0020] 2. The composite carrier for silicon wafer coating provided by this utility model uses silanized CNTs / epoxy resin composite material for the bonding layer. The carbon nanotubes (CNTs) in the interlayer bonding layer play a connecting role, effectively preventing the splitting between the epoxy resin and the carbon fiber layer, and improving the toughness of the carrier material while ensuring the interfacial force of the material.
[0021] 3. The composite carrier plate for silicon wafer coating provided by this utility model uses silanized carbon fiber for each carbon fiber layer. The silanization treatment introduces polar groups on the surface of the carbon fiber, which form chemical bonds with the silanized CNTs in the bonding layer. Combined with the curing effect of epoxy resin, the interlayer shear strength is significantly improved (more than 30% higher than the traditional process), and the service life of the carrier plate is extended. Attached Figure Description
[0022] The preferred embodiments of this utility model are described below with reference to the accompanying drawings, in which:
[0023] Figure 1 This is a schematic diagram of the composite carrier plate for silicon wafer coating of this utility model;
[0024] Figure 2 This is a schematic diagram of the structure of the carrier frame body in the composite carrier for silicon wafer coating of this utility model;
[0025] Figure 3 This is a schematic diagram of the micro-pit structure on the surface of the stainless steel layer in the composite carrier plate for silicon wafer coating of this utility model.
[0026] The attached figures are labeled as follows:
[0027] 1—Carrier frame body; 11—First stainless steel layer; 12—Second stainless steel layer; 13—Carbon fiber layer; 14—Adhesive layer; 15—Micro-dimples;
[0028] 2 — Silicon wafer aperture. Detailed Implementation
[0029] Preferred embodiments of the present invention will now be described with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are merely illustrative of the technical principles of the present invention and are not intended to limit the scope of protection of the present invention.
[0030] It should be noted that in the description of this utility model, terms such as "upper" and "lower" indicating direction or positional relationships are based on the direction or positional relationships shown in the accompanying drawings. This is merely for ease of description and does not indicate or imply that the device or element must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation of this utility model. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0031] Furthermore, it should be noted that, in the description of this utility model, unless otherwise explicitly specified and limited, the terms "set" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through other components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.
[0032] Based on the problems mentioned in the background art regarding the existing silicon wafer coating carrier plates, which are prone to thermal stress deformation leading to coating wrap-around phenomena and downtime accidents, and also have high production costs, this utility model provides a composite carrier plate for silicon wafer coating. This carrier plate incorporates non-metallic materials into the coating equipment, using a composite interface of stainless steel and carbon fiber. The stainless steel layer provides rigid support, while multiple carbon fiber layers reduce weight and improve fatigue resistance. Furthermore, the low coefficient of thermal expansion of carbon fiber reduces the overall coefficient of thermal expansion of the carrier plate, bringing it close to that of a silicon wafer (approximately 2.6 × 10⁻⁶). -6 / ℃), reducing thermal stress in high-temperature processes, thereby solving the problems of coating wrapping caused by large thermal deformation of traditional metal carrier plates, affecting silicon wafer coating effect and normal equipment operation, improving silicon wafer yield, reducing equipment downtime, and reducing production costs.
[0033] Specifically, in its first aspect, this utility model provides a composite carrier plate for silicon wafer coating. Please refer to [link to relevant documentation]. Figure 1 and Figure 2 The composite carrier for silicon wafer coating includes a carrier frame body 1 and silicon wafer holes 2; the carrier frame body 1 includes a first stainless steel layer 11, a second stainless steel layer 12 and a multilayer carbon fiber layer 13 located between the two; the first stainless steel layer 11 is connected to the adjacent carbon fiber layer 13, two adjacent carbon fiber layers 13, and the second stainless steel layer 12 is connected to the adjacent carbon fiber layer 13 by an adhesive layer 14.
[0034] The composite carrier plate for silicon wafer coating provided by this invention features a stainless steel layer providing rigid support, multiple carbon fiber layers reducing weight and improving fatigue resistance, and the low coefficient of thermal expansion of carbon fiber reducing the overall coefficient of thermal expansion of the carrier plate to be close to that of a silicon wafer (approximately 2.6 × 10⁻⁶). -6 / ℃), reducing thermal stress in high-temperature processes, thereby solving the problems of coating wrapping caused by large thermal deformation of traditional metal carrier plates, affecting silicon wafer coating effect and normal equipment operation, improving silicon wafer yield, reducing equipment downtime, and reducing production costs.
[0035] In some specific embodiments, the adhesive layer 14 is made of a silanized CNTs / epoxy resin composite material.
[0036] In this invention, the adhesive layer 14 is made of silanized CNTs / epoxy resin composite material. The carbon nanotubes (CNTs) in the interlayer adhesive layer play a connecting role, effectively preventing the splitting between the resin and the carbon fiber layers, and improving the toughness of the carrier material while ensuring the interfacial force of the materials.
[0037] It should be noted that the silanized CNTs / epoxy resin composite material used in this invention is a known material that can be prepared using existing methods, such as the method in CN107177165A.
[0038] In some specific embodiments, each carbon fiber layer 13 is made of silanized carbon fiber.
[0039] In this invention, each carbon fiber layer 13 is made of silanized carbon fiber. The silanization treatment introduces polar groups on the surface of the carbon fiber, which form chemical bonds with the silanized CNTs in the bonding layer 14. Combined with the curing effect of epoxy resin, the interlayer shear strength is significantly improved (more than 30% higher than the traditional process), and the service life of the carrier plate is extended.
[0040] It should be noted that the silanized carbon fiber used in this utility model is a known material that can be prepared using existing methods, such as silanizing carbon fiber according to the method in CN118163456A.
[0041] For some specific implementation methods, please refer to Figure 3 The surfaces of the first stainless steel layer 11 and the second stainless steel layer 12, which are in contact with the adjacent carbon fiber layer 13, have micro-pits 15.
[0042] In this invention, by providing micro-pits 15 on the surfaces of the first stainless steel layer 11 and the second stainless steel layer 12 that are in contact with the adjacent carbon fiber layer 13, the surface roughness can be increased, the anchoring effect can be improved, and the bonding strength with the carbon fiber layer can be enhanced through mechanical interlocking, thereby preventing delamination, significantly improving the interfacial force, and thus ensuring the mechanical properties of the carrier plate.
[0043] In some specific embodiments, the micro-pits 15 cover 80% to 90% of the surface of the stainless steel layer, for example, 80%, 85%, 90%, or any value within the range; and / or, the depth of the micro-pits 15 is 0.5μm to 2μm, for example, 0.5μm, 1μm, 1.5μm, 2μm, or any value within the range.
[0044] It should be noted that, in this invention, the micro-pits can be formed using conventional stainless steel surface etching processes. For example, they can be formed using the following acid etching process:
[0045] Preparation of the etching solution: The etching solution is a mixed solution of hydrochloric acid, ethanol, and water, wherein the volume concentration of hydrochloric acid is 5%–15%, the volume concentration of ethanol is 10%–30%, and the balance is deionized water. The addition of ethanol helps to make the etching reaction more uniform and controllable.
[0046] Corrosion treatment: Immerse the cleaned stainless steel layer in the corrosion solution, ensuring the liquid completely covers the surface. Control the liquid temperature to be maintained between 20°C and 40°C, and the immersion time to be 20 to 40 seconds.
[0047] Post-treatment: After the corrosion treatment is completed, the stainless steel layer is immediately removed and rinsed with plenty of deionized water to completely remove any residual corrosion solution, followed by drying.
[0048] Through the above-described process, uniform micro-pits with a depth of 0.5μm to 2μm and a coverage of 80% to 90% can be formed on the surface of the stainless steel layer. This structure can significantly increase the contact area and generate a strong mechanical interlocking effect, thereby greatly improving the interlayer bonding strength and durability of the composite carrier plate.
[0049] In some specific embodiments, the carbon fiber layer 13 is at least two layers.
[0050] In some specific embodiments, the carbon fiber layer 13 has 2 to 4 layers. For example, it can be 2, 3, or 4 layers.
[0051] In some specific embodiments, the total thickness of the multiple carbon fiber layers 13 is 0.7 to 1.4 mm, for example, it can be 0.7 mm, 1.0 mm, 1.4 mm or any value within the range.
[0052] This invention balances the rigidity (stainless steel layer) and flexibility (carbon fiber layer) of the carrier plate by optimizing the number and thickness of layers, avoiding the overall strength decrease due to too many layers or the thermal matching failure due to too few layers.
[0053] In some specific embodiments, the silicon wafer holes 2 penetrate the carrier frame body 1 in the thickness direction and are distributed in a regular array on the carrier frame body 1.
[0054] In this invention, the silicon wafer holes 2 are arranged in a regular array on the carrier frame body 1, which facilitates the standardized loading of silicon wafers.
[0055] In some specific embodiments, the shape of the silicon wafer hole 2 is adapted to the silicon wafer to be supported.
[0056] It should be noted that this invention does not impose any limitations on the shape of the silicon wafer hole 2, as long as the shape of the silicon wafer hole 2 is compatible with the silicon wafer to be supported. In practical applications, those skilled in the art can set the shape of the silicon wafer hole 2 according to actual needs. For example, the shape of the silicon wafer hole 2 can be set to circular, or it can be set to rectangular, etc. Adjustments and changes to the shape of the silicon wafer hole 2 do not deviate from the basic principles of this invention and should be limited to the protection scope of this invention.
[0057] In some specific embodiments, the spacing of the silicon wafer aperture 2 is 2mm to 4mm. For example, it can be 2mm, 2.5mm, 3mm, 3.5mm, 4mm or other values within the range, and those skilled in the art can set it according to actual needs.
[0058] In this invention, by setting the spacing of the silicon wafer holes 2 to 2-4 mm, the loading density and the gas flow of the coating can be balanced, thereby improving the coating uniformity.
[0059] Furthermore, in a second aspect, this utility model provides a coating apparatus, which includes the composite carrier plate for silicon wafer coating described in the first aspect. Thus, the coating apparatus possesses all the advantages of the aforementioned composite carrier plate for silicon wafer coating, which will not be elaborated further here.
[0060] The technical solution of this utility model has been described in conjunction with the preferred embodiments shown in the accompanying drawings. However, it will be readily understood by those skilled in the art that the protection scope of this utility model is obviously not limited to these specific embodiments. Without departing from the principle of this utility model, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will all fall within the protection scope of this utility model.
Claims
1. A composite carrier for silicon wafer coating, characterized in that, It includes a carrier frame body (1) and silicon wafer holes (2); the carrier frame body (1) includes a first stainless steel layer (11), a second stainless steel layer (12) and a multilayer carbon fiber layer (13) located between the two; the first stainless steel layer (11) is connected to the adjacent carbon fiber layer (13), two adjacent carbon fiber layers (13), and the second stainless steel layer (12) is connected to the adjacent carbon fiber layer (13) through an adhesive layer (14).
2. The composite carrier for silicon wafer coating according to claim 1, characterized in that, The adhesive layer (14) is made of silanized CNTs / epoxy resin composite material.
3. The composite carrier for silicon wafer coating according to claim 2, characterized in that, The material of each carbon fiber layer (13) is silanized carbon fiber.
4. The composite carrier for silicon wafer coating according to claim 1, characterized in that, The surfaces of the first stainless steel layer (11) and the second stainless steel layer (12) that are in contact with the adjacent carbon fiber layer (13) have micro-pits (15).
5. The composite carrier for silicon wafer coating according to claim 4, characterized in that, The micro-pits (15) cover 80% to 90% of the surface of the stainless steel layer; And / or, the depth of the micro-pits (15) is 0.5 μm to 2 μm.
6. The composite carrier for silicon wafer coating according to claim 1, characterized in that, The carbon fiber layer (13) has at least two layers.
7. The composite carrier for silicon wafer coating according to claim 6, characterized in that, The carbon fiber layer (13) consists of 2 to 4 layers.
8. The composite carrier for silicon wafer coating according to claim 7, characterized in that, The total thickness of the multilayer carbon fiber layer (13) is 0.7 mm to 1.4 mm.
9. The composite carrier for silicon wafer coating according to any one of claims 1-8, characterized in that, The silicon wafer holes (2) penetrate the carrier frame body (1) in the thickness direction and are distributed in a regular array on the carrier frame body (1); And / or, the shape of the silicon wafer aperture (2) is adapted to the silicon wafer to be supported; And / or, the spacing of the silicon wafer holes (2) is 2mm to 4mm.
10. A coating apparatus, characterized in that, The coating equipment includes the composite carrier plate for silicon wafer coating as described in any one of claims 1-9.
Citation Information
Patent Citations
Heat conduction type carbon nano tube / epoxy resin composite material and preparation method thereof
CN107177165A
Bionic modified resin composite interlayer pressure-resistant shell and preparation method thereof
CN118163456A
Carbon support plate for film coating of silicon chip
CN202246857U
Carbon fiber silicon wafers of solar cell support plate
CN207038493U