Process chamber leak detection apparatus and plasma apparatus

Abstract

The utility model provides a kind of process chamber leak detection device and plasma equipment, the leak detection device includes multiple electrode probes and sheath layer voltage oscilloscope, electrode probe configuration is set in process chamber, to detect the plasma sheath layer voltage oscillation amplitude in process chamber;Sheath layer voltage oscilloscope is connected with multiple electrode probes, sheath layer voltage oscilloscope configuration is detected the phase difference of the plasma sheath layer voltage signal detected by multiple electrode probes.The utility model not only can accurately judge whether process chamber leaks, but also can accurately locate the specific direction of leak position.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor processing and manufacturing technology, and in particular to a process chamber leakage detection device and a plasma device. Background Technology

[0002] In semiconductor manufacturing, plasma processes such as deposition and etching are mostly performed within a process chamber. For deposition and etching processes, which require a low-pressure environment, a vacuum system is used to maintain the pressure within the process chamber below atmospheric pressure. The process chamber is sealed with polymer rubber rings. If the process chamber has poor bonding with other components or cracks, leaks can occur. When leaks occur, the pressure within the process chamber can become abnormal, causing the wafer's critical dimensions to exceed limits and affecting product yield. Therefore, leak monitoring of the process chamber is essential during plasma processing.

[0003] Traditional plasma equipment can only detect leaks in process chambers during non-production periods, resulting in slow response times. Furthermore, for leaks in valve bodies containing reactive gases, the complex piping can prevent the detection of even minute leaks. Utility Model Content

[0004] The purpose of this invention is to provide a process chamber leakage detection device and a plasma device, which can not only accurately determine whether a process chamber has leaked, but also accurately locate the specific location of the leak.

[0005] To achieve the above objectives, this utility model provides a process chamber leakage detection device, which includes multiple electrode probes and a sheath voltage oscilloscope. The electrode probes are configured to be disposed within the process chamber to detect the oscillation amplitude of the plasma sheath voltage within the process chamber. The sheath voltage oscilloscope is connected to the multiple electrode probes and is configured to detect the phase difference of the plasma sheath voltage signals detected by the multiple electrode probes.

[0006] Optionally, the plurality of electrode probes are all mounted on the upper electrode within the process chamber, and the electrode probes are insulated from the upper electrode.

[0007] Optionally, the bottom end of the electrode probe extends through the lower surface of the upper electrode, and the distance between the bottom end of the electrode probe and the lower surface of the upper electrode is 0.1mm to 3mm.

[0008] Optionally, the plurality of electrode probes are uniformly arranged along the circumference of the upper electrode.

[0009] Optionally, the plurality of electrode probes are all positioned close to the edge of the upper electrode.

[0010] Optionally, the process chamber leakage detection device includes three electrode probes, which are evenly distributed within the process chamber at 120° intervals.

[0011] Optionally, the sheath voltage oscilloscope is grounded.

[0012] To achieve the above objectives, this utility model also provides a plasma device, which includes a process chamber and a process chamber leakage detection device as described in any of the above claims. The process chamber is provided with an upper electrode and a lower electrode, which are arranged opposite to each other.

[0013] Optionally, the sidewalls of the process chamber are grounded.

[0014] Optionally, the lower electrode is connected to a radio frequency generator.

[0015] Compared with the prior art, the process chamber leakage detection device and plasma equipment provided by this utility model have the following unexpected technical effects:

[0016] (1) The process chamber leakage detection device provided by this utility model includes multiple electrode probes and a sheath voltage oscilloscope. The electrode probes are configured to be placed in the process chamber to detect the oscillation amplitude of the plasma sheath voltage in the process chamber. The sheath voltage oscilloscope is connected to the multiple electrode probes and is configured to detect the phase difference of the plasma sheath voltage signal detected by the multiple electrode probes. During plasma processing (such as dry etching), changes in process conditions (e.g., gas leakage, pressure fluctuations) can alter the sheath voltage oscillation amplitude (SVOA) within the process chamber. This invention, by arranging multiple electrode probes within the process chamber, can precisely capture abnormal signals of the SVOA caused by gas leakage, ensuring accurate detection even of minor leaks and thus accurately determining whether a leak has occurred in the process chamber. Since the electrode probes are positioned differently within the process chamber, the arrival time of the voltage disturbance signal caused by the gas leak at each probe will vary slightly. This time difference manifests as a phase difference in the periodic oscillation signal. Therefore, by detecting the phase difference of the SVOA signals from the multiple electrode probes, the specific location of the leak can be accurately determined.

[0017] (2) By mounting the plurality of electrode probes on the upper electrode within the process chamber, this invention not only facilitates the fixing and installation of the electrode probes but also effectively avoids interference with the wafers within the process chamber. Furthermore, by designing the bottom end of the electrode probe to extend beyond the lower surface of the upper electrode and setting the distance between the bottom end of the electrode probe and the lower surface of the upper electrode to 0.1mm~3mm, the bottom end of the electrode probe can be located within the sheath region. Since most of the voltage drop of the plasma sheath voltage occurs within this very thin sheath region, i.e., the electric field strength is strongest within the sheath region, by placing the bottom end of the electrode probe directly within the sheath region with the strongest electric field strength, it can be ensured that the electrode probe can effectively capture the oscillation signal of the plasma sheath voltage, ensuring that the intensity and signal-to-noise ratio of the plasma sheath voltage signal detected by the electrode probe can be maximized, thereby further improving the detection accuracy of the process chamber leakage detection device provided by this invention.

[0018] (3) By arranging three electrode probes evenly distributed at a 120° angle difference between each other in the process chamber, this utility model can form an equilateral triangle layout, thereby ensuring that the distance between any two electrode probes is equal and the orientation relationship between any two probes is symmetrical. Thus, the leakage location can be uniquely and accurately calculated using a relatively simple trigonometric formula, thereby effectively improving the calculation efficiency of the process chamber leakage detection device provided by this utility model and ensuring the real-time performance of the process chamber leakage detection device provided by this utility model. In addition, this arrangement can also ensure that the plasma environment in which all electrode probes are located is highly consistent macroscopically, thereby ensuring that when a leakage occurs, the difference in the plasma sheath voltage signal detected by each electrode probe is caused by the orientation of the leakage source, rather than by the environmental differences of the electrode probes themselves, thereby further improving the detection accuracy of the process chamber leakage detection device provided by this utility model.

[0019] Since the plasma equipment provided by this utility model includes the process chamber leakage detection device provided by this utility model, the plasma equipment provided by this utility model has at least all the beneficial effects of the process chamber leakage detection device provided by this utility model. For details, please refer to the relevant description of the beneficial effects of the process chamber leakage detection device provided by this utility model above. Therefore, the beneficial effects of the plasma equipment provided by this utility model will not be described in detail here. Attached Figure Description

[0020] Figure 1 Diagram of gas supply piping for plasma equipment.

[0021] Figure 2 This is a schematic diagram of the installation of a process chamber leakage detection device provided in one embodiment of the present invention.

[0022] Figure 3 This is a schematic diagram showing the distribution of electrode probes on the upper electrode in a process chamber leakage detection device provided according to an embodiment of the present invention.

[0023] Figure 4 This is a reference diagram showing the location distribution of leaks according to one embodiment of the present invention.

[0024] Figure 5 This is a schematic diagram of N2 leakage provided for one embodiment of the present invention.

[0025] Figure 6 This is a schematic diagram showing the detection results of the process chamber leakage detection device provided by this utility model.

[0026] The reference numerals in the attached drawings are explained as follows: Gas main line - 110; First valve body - 111; Flow control line - 120; Second valve body - 121; Inlet line - 130; Third valve body - 131; Flow control module - FCS; Process chamber - 200; Side wall - 210; Sealing ring - 220; Outlet - 230; Electrode probes - 300, 301, 302, 303; Sheath voltage oscilloscope - 400; Upper electrode - 500; Lower electrode - 600; Radio frequency generator - 700. Detailed Implementation

[0027] The following detailed description of the process chamber leakage detection device and plasma equipment proposed by this utility model, in conjunction with the accompanying drawings and specific embodiments, will provide further details. The advantages and features of this utility model will become clearer from the following description. Please refer to the accompanying drawings for clarity regarding the purpose, features, and advantages of this utility model. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are merely for illustrative purposes and to enable those skilled in the art to understand and read the material, and are not intended to limit the implementation conditions of this utility model. Any modifications to the structure, changes in proportions, or adjustments to the size, provided they produce the same or similar effects and achieve the same purpose as this utility model, should still fall within the scope of the technical content disclosed in this utility model. Specific design features of this utility model disclosed herein, including, for example, specific dimensions, orientations, positions, and shapes, will be determined in part by the specific application and usage environment. Furthermore, in the embodiments described below, the same reference numerals are sometimes used across different drawings to denote the same parts or parts having the same function, omitting repeated descriptions. In this specification, similar reference numerals and letters are used to denote similar items, so once an item is defined in one figure, it does not need to be discussed further in subsequent figures.

[0028] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations, nor should they be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element. The singular forms “a,” “one,” and “the” include plural objects. The term “or” is generally used to mean “and / or.” The term “several” is generally used to mean “at least one.” The term “at least two” is generally used to mean “two or more.” The term “multiple” is generally used to mean “at least two.”

[0029] In the description of this utility model, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. In the description of this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances. Furthermore, in this utility model, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Moreover, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0030] To facilitate understanding, a brief explanation of the research background of this utility model will be provided first. Please refer to... Figure 1 This is a diagram of the gas supply piping for a plasma device, where red graphics indicate leaks. For example... Figure 1 As shown, the gas supply pipeline of the plasma device includes a main gas line 110, multiple flow control lines 120, and multiple inlet lines 130. The main gas line 110 is equipped with a first valve body 111, each flow control line 120 is equipped with a second valve body 121, and each inlet line 130 is equipped with a third valve body 131. It is evident that the gas supply pipeline of the plasma device is quite complex, which may lead to some minute leaks going undetected.

[0031] Based on this, the core idea of ​​this utility model is to provide a process chamber leakage detection device and a plasma device, which can not only accurately determine whether a leakage has occurred in the process chamber 200, but also accurately locate the specific location of the leakage. It should be noted that, as those skilled in the art will understand, the plasma device provided by this utility model can be, but is not limited to, semiconductor processing equipment such as plasma etching equipment and plasma deposition equipment.

[0032] To achieve the above-mentioned goals, this utility model provides a process chamber leakage detection device, please refer to... Figure 2 This is a schematic diagram of the installation of a process chamber leakage detection device provided in one embodiment of this utility model. Figure 2 As shown, the process chamber leakage detection device provided by this utility model includes multiple electrode probes 300 and a sheath voltage oscilloscope 400. The electrode probes 300 are configured to be disposed in the process chamber 200 to detect the oscillation amplitude of the plasma sheath voltage in the process chamber 200. The sheath voltage oscilloscope 400 is connected to the multiple electrode probes 300 and is configured to detect the phase difference of the plasma sheath voltage signal detected by the multiple electrode probes 300.

[0033] During plasma processing (e.g., dry etching), changes in process conditions (e.g., gas leakage, pressure fluctuations) can alter the Sheath Voltage Oscillation Amplitude (SVOA) within the process chamber 200. Therefore, this invention, by arranging multiple electrode probes 300 within the process chamber 200, can accurately capture abnormal signals of the SVOA caused by gas leakage, ensuring that even minute leaks can be accurately detected. This allows for precise determination of whether a leak has occurred in the process chamber 200. Since the electrode probes 300 are positioned differently within the process chamber 200, the arrival time of the voltage disturbance signal caused by gas leakage at each electrode probe 300 will vary slightly. This time difference manifests as a phase difference in the periodic oscillation signal. Therefore, by detecting the phase difference of the SVOA signals from the multiple electrode probes 300, the specific location of the leak can be accurately determined. It is evident that by employing the process chamber leakage detection device provided by this utility model, it is possible not only to accurately determine whether a leak has occurred in the process chamber 200, but also to accurately pinpoint the specific location of the leak.

[0034] It should be noted that, as those skilled in the art will understand, the present invention does not limit the specific structure of the sheath voltage oscilloscope 400. The specific structure of the sheath voltage oscilloscope 400 can be adapted by referring to the relevant content in the field of voltage oscilloscopes known to those skilled in the art, and will not be described in detail here.

[0035] In some exemplary embodiments, the plurality of electrode probes 300 are all mounted on the upper electrode 500 within the process chamber 200, and the electrode probes 300 are insulated from the upper electrode 500. Therefore, by mounting the plurality of electrode probes 300 on the upper electrode 500 within the process chamber 200 and insulating the electrode probes 300 from the upper electrode 500, not only is it easier to fix and install the electrode probes 300, but it also effectively avoids interference with the wafer within the process chamber 200. Specifically, insulating materials such as high-purity alumina or aluminum nitride ceramics can be used to achieve the insulated connection between the electrode probes 300 and the upper electrode 500.

[0036] It should be noted that, as those skilled in the art will understand, the electrode probe 300 is sealed to the upper electrode 500. Therefore, by sealing the electrode probe 300 to the upper electrode 500, the airtightness of the process chamber 200 can be effectively guaranteed.

[0037] In some exemplary embodiments, the bottom end of the electrode probe 300 extends beyond the lower surface of the upper electrode 500, and the distance between the bottom end of the electrode probe 300 and the lower surface of the upper electrode 500 is 0.1 mm to 3 mm. Therefore, by designing the bottom end of the electrode probe 300 to extend beyond the lower surface of the upper electrode 500, and by designing the distance between the bottom end of the electrode probe 300 and the lower surface of the upper electrode 500 to be 0.1 mm to 3 mm, the bottom end of the electrode probe 300 can be located within the sheath region. Since most of the voltage drop of the plasma sheath voltage occurs within this very thin sheath region, i.e., the electric field strength is strongest within the sheath region, by placing the bottom end of the electrode probe 300 directly within the sheath region with the strongest electric field strength, it can be ensured that the electrode probe 300 can effectively capture the oscillation signal of the plasma sheath voltage, ensuring that the intensity and signal-to-noise ratio of the plasma sheath voltage signal detected by the electrode probe 300 can be maximized. Furthermore, since the potential of the sheath region is highly sensitive to minute changes in the surrounding gas environment, any gas change caused by leakage will instantly alter the dynamic characteristics of the sheath region, thereby affecting the oscillation amplitude and phase of the plasma sheath voltage. Therefore, by placing the electrode probe 300 within the sheath region, the detection accuracy of the process chamber leakage detection device provided by this invention can be effectively improved.

[0038] Please continue to refer to this. Figure 3 This is a schematic diagram showing the distribution of electrode probes 300 on the upper electrode 500 in a process chamber leakage detection device provided by an embodiment of this utility model. Figure 3 As shown, in some exemplary embodiments, the plurality of electrode probes 300 are uniformly arranged circumferentially along the upper electrode 500. Therefore, by designing the plurality of electrode probes 300 to be uniformly arranged circumferentially along the upper electrode 500, it can be ensured that regardless of the direction in which a leak occurs within the process chamber 200, at least two electrode probes 300 will be able to receive the voltage disturbance signal caused by the leak along significantly different paths, thereby enabling comprehensive monitoring of the entire process chamber 200 without blind spots.

[0039] Please continue to refer to this. Figure 3 ,like Figure 3 As shown, in some exemplary embodiments, the plurality of electrode probes 300 are all disposed close to the edge of the upper electrode 500. Therefore, by designing the plurality of electrode probes 300 to be disposed close to the edge of the upper electrode 500, the distance between the plurality of electrode probes 300 can be maximized. This ensures that when a leak occurs, the path difference and phase difference of the voltage disturbance signal propagating to different electrode probes 300 are more pronounced, thereby further improving the detection accuracy of the process chamber leak detection device provided by this invention.

[0040] Please continue to refer to this. Figure 3 ,like Figure 3As shown, in some exemplary embodiments, the process chamber leakage detection device provided by this utility model includes three electrode probes 300, which are uniformly distributed at 120° intervals within the process chamber 200. Thus, by setting three electrode probes 300 evenly distributed at 120° angles to each other within the process chamber 200 (specifically on the upper electrode 500 within the process chamber 200), an equilateral triangle layout can be formed. This ensures that the distance between any two electrode probes 300 is equal and the orientation relationship between any two probes is symmetrical. Therefore, the leakage location can be uniquely and accurately calculated using a relatively simple trigonometric formula, thereby effectively improving the calculation efficiency of the process chamber leakage detection device provided by this utility model and ensuring its real-time performance. Furthermore, this configuration ensures that the plasma environment in which all electrode probes 300 are located is macroscopically highly consistent. This ensures that when a leak occurs, the difference in plasma sheath voltage signals detected by each electrode probe 300 is caused by the location of the leak source, rather than by environmental differences in the location of the electrode probes 300 themselves. This further improves the detection accuracy of the process chamber leak detection device provided by this invention.

[0041] Specifically, the location of the leak can be determined using the following formula. :

[0042] in, This is the phase difference between electrode probe 302 and electrode probe 303 (that is, the phase difference between the plasma sheath voltage signals detected by electrode probe 302 and electrode probe 303). d12 is the phase difference between electrode probe 301 and electrode probe 302 (that is, the phase difference between the plasma sheath voltage signals detected by electrode probe 301 and electrode probe 302), d23 is the distance between electrode probe 302 and electrode probe 303, and d12 is the distance between electrode probe 301 and electrode probe 302.

[0043] When electrode probes 301, 302, and 303 are evenly distributed on the upper electrode 500 at an angle difference of 120°, d23 equals d12. Therefore, the above formula for calculating the leakage location can be simplified to:

[0044] Please continue to refer to this. Figure 4 This is a reference diagram showing the location distribution of leaks according to an embodiment of this utility model. The black dots in the diagram represent the simulated locations of the leak sources. Figure 4As shown, when the error ( When the leakage is distributed within a circular area with a radius of 0 to -10, it indicates that the leakage originates from the upper electrode 500 (including the main gas line 110, multiple flow control lines 120, and multiple intake lines 130); when the leakage location... When the angle distribution is within the range of 90° to 180°, it indicates that the leakage originates from the outlet 230 at the lower part of the process chamber 200; when the error... ( When the leakage is distributed within a circular area with a radius of 0 to 10, it indicates that the leakage originates from the sealing point of the corresponding sealing ring 220.

[0045] To verify the detection accuracy of the process chamber leakage detection device provided by this utility model, the process chamber 200 of a CCP etching machine (capacitively coupled plasma etching machine) was used as the test object. Under the conditions of RF frequency of 2MHz, RF power of 3800W, and pressure of 25mT, a certain amount of C5F8 (octafluorocyclopentene), Ar (argon), O2 and other gases were introduced to create N2 (nitrogen) leakage at the front valve body (third valve body 131) of the flow control module FCS (e.g., Figure 5 As shown, this is a schematic diagram of N2 (nitrogen) leakage according to one embodiment of this utility model, where the red graphic represents the leak. During the experiment, the pressure sensor's detection result did not change or respond. The detection result of using a helium leak detector after shutdown was no leak detected. However, the SVOA (plasma sheath voltage oscillation amplitude) curve detected by the process chamber leak detection device provided by this utility model showed an anomaly within 8 seconds (e.g., Figure 6 The diagram shows the detection results of the process chamber leakage detection device provided by this invention. The green line represents the SVOA curve when there is a leak, and the black line represents the SVOA curve when there is no leak. The SVOA curve shown by the green line exhibits a significant fluctuation at 0:08 (i.e., the 8th second), meaning that the SVOA detected by the process chamber leakage detection device at the 8th second significantly exceeds the normal value. Furthermore, the phase difference between electrode probe 301 and electrode probe 302... The phase difference between electrode probe 302 and electrode probe 303 is 20°. The angle is 12°, and the location of the leak is calculated. It is 31°, by Figure 4It is known that the leak is located in the central area, therefore it can be determined that the leak originates from the upper electrode 500. Manual testing of the front valve body of the flow control module FCS revealed a leak in the valve body (third valve body 131) of the N2 (nitrogen) inlet pipe 130. Therefore, the process chamber leak detection device provided by this invention can not only accurately determine whether a leak has occurred in the process chamber 200, but also accurately pinpoint the exact location of the leak.

[0046] It should be noted that, as Figure 4 The leak location distribution reference diagram shown is merely illustrative and does not constitute a limitation of this utility model. The leak location distribution reference diagram corresponding to the process chamber 200 of different plasma devices can be simulated according to their specific structures. It should also be noted that, as those skilled in the art will understand, in some other exemplary embodiments, the process chamber leak detection device provided by this utility model may also include four electrode probes 300, five electrode probes 300, or more electrode probes 300.

[0047] In some exemplary embodiments, the electrode probe 300 is made of a corrosion-resistant metal such as tantalum, tungsten, or platinum. Therefore, by using a corrosion-resistant metal such as tantalum, tungsten, or platinum, the electrode probe 300 can withstand the bombardment and erosion of highly corrosive plasma, thereby effectively extending its service life.

[0048] Please continue to refer to this. Figure 2 ,like Figure 2 As shown, in some exemplary embodiments, the sheath voltage oscilloscope 400 is grounded. Therefore, by grounding the sheath voltage oscilloscope 400, a uniform and stable ground reference potential can be provided, thereby providing an accurate data basis for the phase difference-based precise positioning algorithm, and further improving the detection accuracy of the process chamber leakage detection device provided by this invention. It should be noted that, as those skilled in the art will understand, Figure 2 In this context, "GND" indicates grounding.

[0049] To achieve the above-mentioned goals, this utility model also provides a plasma device, which includes a process chamber 200 and the process chamber leakage detection device described above. Please refer to [reference needed]. Figure 2 ,like Figure 2As shown, the process chamber 200 is provided with an upper electrode 500 and a lower electrode 600, which are arranged opposite to each other. Since the plasma device provided by this utility model includes the process chamber leakage detection device provided by this utility model, the plasma device provided by this utility model possesses at least all the beneficial effects of the process chamber leakage detection device provided by this utility model. For details, please refer to the relevant descriptions of the beneficial effects of the process chamber leakage detection device provided by this utility model above; therefore, the beneficial effects of the plasma device provided by this utility model will not be elaborated upon here.

[0050] Please continue to refer to this. Figure 2 ,like Figure 2 As shown, in some exemplary embodiments, the sidewall 210 of the process chamber is grounded. Thus, by designing the sidewall 210 of the process chamber to be grounded, not only is a stable and uniform potential reference provided, but it also helps to effectively confine the plasma to the central region of the process chamber 200, protecting the inner walls of the process chamber 200 from excessive bombardment by high-energy ions. Furthermore, the grounded sidewall 210 can also serve as a return path for radio frequency current, ensuring that radio frequency energy can be effectively coupled into the gas of the process chamber 200 to generate and sustain plasma.

[0051] Please continue to refer to this. Figure 2 ,like Figure 2 As shown, in some exemplary embodiments, the lower electrode 600 is connected to a radio frequency generator 700. Thus, by connecting the lower electrode 600 to the radio frequency generator 700, a DC self-bias voltage can be generated when radio frequency power is applied to the lower electrode 600, thereby accelerating ions in the plasma and causing them to bombard the wafer surface vertically and with high energy. This helps compensate for edge effects caused by the chamber geometry, thereby improving the etching or deposition uniformity across the entire wafer surface.

[0052] It should be noted that, as those skilled in the art will understand, further details regarding the plasma device provided by this utility model can be adapted by referring to relevant content in the field of plasma devices known to those skilled in the art, and will not be elaborated upon here.

[0053] In summary, compared with the prior art, the process chamber leakage detection device and plasma equipment provided by this utility model have the following unexpected technical effects:

[0054] (1) During plasma processing (e.g., dry etching process), when process conditions change (e.g., gas leakage, pressure fluctuation), the plasma sheath voltage oscillation amplitude (SVOA) in the process chamber 200 will change. Therefore, by arranging multiple electrode probes 300 in the process chamber 200, this invention can accurately capture abnormal signals of plasma sheath voltage oscillation amplitude caused by gas leakage, ensuring that even small leaks can be accurately detected, thereby accurately determining whether a leak has occurred in the process chamber 200. Since the spatial positions of the electrode probes 300 in the process chamber 200 are different, the time it takes for the voltage disturbance signal caused by gas leakage to reach each electrode probe 300 will have slight differences. This time difference is manifested as a phase difference in the periodic oscillation signal. Therefore, by detecting the phase difference of the plasma sheath voltage signals of the multiple electrode probes 300, the specific location of the leak can be accurately determined. It is evident that by employing the process chamber leakage detection device provided by this utility model, it is possible not only to accurately determine whether a leak has occurred in the process chamber 200, but also to accurately pinpoint the specific location of the leak.

[0055] (2) By installing the multiple electrode probes 300 on the upper electrode 500 inside the process chamber 200, this utility model can not only make it easier to fix and install the electrode probes 300, but also effectively avoid interference to the wafer inside the process chamber 200. Furthermore, by designing the bottom end of the electrode probe 300 to extend beyond the lower surface of the upper electrode 500, and designing the distance between the bottom end of the electrode probe 300 and the lower surface of the upper electrode 500 to be 0.1mm~3mm, the bottom end of the electrode probe 300 can be located within the sheath region. Since most of the voltage drop of the plasma sheath voltage occurs within this very thin sheath region, that is, the electric field strength is strongest within the sheath region, by placing the bottom end of the electrode probe 300 directly within the sheath region with the strongest electric field strength, it can be ensured that the electrode probe 300 can effectively capture the oscillation signal of the plasma sheath voltage, and that the intensity and signal-to-noise ratio of the plasma sheath voltage signal detected by the electrode probe 300 can be maximized, thereby further improving the detection accuracy of the process chamber leakage detection device provided by this utility model.

[0056] (3) By arranging three electrode probes 300 evenly distributed at a 120° angle difference between each other within the process chamber 200, this utility model can form an equilateral triangle layout. This ensures that the distance between any two electrode probes 300 is equal and the orientation relationship between any two probes is symmetrical. Thus, the leakage location can be uniquely and accurately calculated using a relatively simple trigonometric formula, thereby effectively improving the calculation efficiency of the process chamber leakage detection device provided by this utility model and ensuring the real-time performance of the process chamber leakage detection device provided by this utility model. In addition, this arrangement can also ensure that the plasma environment in which all electrode probes 300 are located is highly consistent macroscopically. This ensures that when a leakage occurs, the difference in the plasma sheath voltage signal detected by each electrode probe 300 is caused by the orientation of the leakage source, rather than by the environmental differences in the position of the electrode probes 300 themselves, thereby further improving the detection accuracy of the process chamber leakage detection device provided by this utility model.

[0057] It should be noted that in the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this utility model. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0058] It should also be noted that the above description is only a description of the preferred embodiment of this utility model and is not intended to limit the scope of this utility model in any way. Any changes or modifications made by those skilled in the art based on the above disclosure are within the protection scope of this utility model. Obviously, those skilled in the art can make various modifications and variations to this utility model without departing from the spirit and scope of this utility model. Therefore, if these modifications and variations fall within the scope of this utility model and its equivalents, this utility model also intends to include these modifications and variations.

Claims

1. A process chamber leakage detection device, characterized in that, It includes multiple electrode probes and a sheath voltage oscilloscope, wherein the electrode probes are configured to be disposed within the process chamber to detect the amplitude of plasma sheath voltage oscillation within the process chamber; The sheath voltage oscilloscope is connected to the plurality of electrode probes and is configured to detect the phase difference of the plasma sheath voltage signal detected by the plurality of electrode probes.

2. The process chamber leakage detection device according to claim 1, characterized in that, The plurality of electrode probes are all mounted on the upper electrode within the process chamber, and the electrode probes are insulated from the upper electrode.

3. The process chamber leakage detection device according to claim 2, characterized in that, The bottom end of the electrode probe extends through the lower surface of the upper electrode, and the distance between the bottom end of the electrode probe and the lower surface of the upper electrode is 0.1mm to 3mm.

4. The process chamber leakage detection device according to claim 2, characterized in that, The plurality of electrode probes are uniformly arranged along the circumference of the upper electrode.

5. The process chamber leakage detection device according to claim 2, characterized in that, The plurality of electrode probes are all positioned close to the edge of the upper electrode.

6. The process chamber leakage detection device according to claim 1, characterized in that, The process chamber leakage detection device includes three electrode probes, which are evenly distributed at 120° intervals within the process chamber.

7. The process chamber leakage detection device according to claim 1, characterized in that, The sheath voltage oscilloscope is grounded.

8. A plasma device, characterized in that, The invention includes a process chamber and a process chamber leakage detection device according to any one of claims 1 to 7, wherein an upper electrode and a lower electrode are provided in the process chamber, and the upper electrode and the lower electrode are arranged opposite to each other.

9. The plasma device according to claim 8, characterized in that, The sidewall of the process chamber is grounded.

10. The plasma device according to claim 8, characterized in that, The lower electrode is connected to a radio frequency generator.

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