Thermoelectric chip and transmission electron microscope in-situ multi-field coupling experiment platform

Abstract

The utility model relates to transmission electron microscope in situ experiment technical field especially, it relates to a thermoelectric chip and transmission electron microscope in situ multi -field coupling experiment platform, the utility model provides a thermoelectric chip includes chip base body, support isolation beam, carries the part, electrical control wire and temperature control wire, and chip base body is provided with the central hole, support isolation beam sets up in the central hole, and one end of support isolation beam is connected with chip base body, carries the part and support isolation beam connection, and carries the part in the central hole, is used for bearing sample, electrical control wire sets up on chip base body, and via support isolation beam extension to the carrying part, is used for carrying out electrical signal's loading and measurement to the sample of carrying part, temperature control wire sets up on chip base body, and via support isolation beam extension to the carrying part, is used for controlling and detecting the temperature of carrying part, the utility model provides a thermoelectric chip effectively reduced the heat conduction cross -section area, significantly improved temperature control precision and heat isolation effect.

Description

Technical Field

[0001] This utility model relates to the field of in-situ transmission electron microscopy (TEM) experimental technology, and in particular to a thermoelectric chip and an in-situ multi-field coupling experimental platform for TEM. Background Technology

[0002] Transmission electron microscopy (TEM), as an important tool for materials characterization, enables the observation of microstructures at atomic resolution. With the deepening development of materials science research, simply observing the static structure of materials is no longer sufficient to meet research needs. Researchers increasingly require applying external stimuli to materials under TEM conditions to observe their dynamic response behavior in real time under different physical fields. This in-situ experimental technique is of great significance for understanding the intrinsic properties of materials and optimizing material design.

[0003] Currently, in-situ experiments using transmission electron microscopy (TEM) mainly include in-situ heating, in-situ electrical testing, and in-situ mechanical testing. Among these, multi-field coupled experiments that simultaneously achieve electrical and temperature control have unique research value, such as studying the Seebeck effect in thermoelectric materials, observing electroinduced phase transition processes, and analyzing the electrochemical reactions of ion battery materials. Existing technology has developed thermoelectric chips with dual electrical and temperature control capabilities, enabling the simultaneous application of electric and temperature fields to samples under TEM conditions.

[0004] However, existing thermoelectric chips have significant shortcomings in terms of thermal isolation performance. In current technologies, the sample carrier is typically placed directly on the surface of the chip substrate, without an effective thermal isolation structure between the carrier and the substrate. This direct contact design results in a large thermal conduction interface between the carrier and the substrate, allowing temperature changes in the substrate to be directly conducted to the sample area, severely affecting the accuracy and stability of temperature control.

[0005] Specifically, when localized heating of the sample is required, because the support component is in direct contact with the substrate, a large amount of heat is rapidly conducted to the substrate through the contact interface and absorbed by the substrate, resulting in extremely low heating efficiency. The temperature control system needs to provide power far exceeding the theoretical requirements to bring the sample to the target temperature. This not only increases power consumption but may also cause the overall temperature of the substrate to rise, thereby affecting the normal operation of other circuits. Utility Model Content

[0006] This invention provides a thermoelectric chip and an in-situ multi-field coupling experimental platform for transmission electron microscopy. The thermoelectric chip effectively reduces the heat conduction cross-sectional area and significantly improves the temperature control accuracy and thermal isolation effect.

[0007] This utility model provides a thermoelectric chip, comprising: a chip substrate having a central hole; a supporting isolation beam disposed within the central hole, one end of which is connected to the chip substrate; a mounting portion connected to the supporting isolation beam and located within the central hole for carrying a sample; an electrical control wire disposed on the chip substrate and extending through the supporting isolation beam to the mounting portion for loading and measuring electrical signals onto the sample in the mounting portion; and a temperature control wire disposed on the chip substrate and extending through the supporting isolation beam to the mounting portion for controlling and detecting the temperature of the mounting portion.

[0008] In one possible implementation, the mounting section is located at the midpoint of the supporting isolation beam.

[0009] In one possible implementation, there are two supporting isolation beams, which are symmetrically distributed on both sides of the mounting section.

[0010] In one possible implementation, the surface of the mounting portion is formed with a mounting area for holding the sample; the mounting portion is provided with a through hole extending through the thickness direction of the mounting portion, and the through hole is disposed opposite to the mounting area so that the electron beam can penetrate the sample through the through hole.

[0011] In one possible implementation, a heating region is formed on the surface of the mounting part, and the heating region is distributed around the mounting region; the temperature control wire includes a heating part located in the heating region.

[0012] In one possible implementation, a first insulating layer is disposed on the surface of the chip substrate, and a temperature control wire is disposed on the first insulating layer; a second insulating layer is disposed on the surface of the first insulating layer, and an electrical control wire is disposed on the second insulating layer, with the second insulating layer located between the electrical control wire and the temperature control wire.

[0013] In one possible implementation, the corners of the electrical control wires and temperature control wires are either obtuse or rounded.

[0014] In one possible implementation, a bonding section is provided on the surface of the chip substrate, and electrical control wires and temperature control wires are electrically connected to the bonding section.

[0015] In one possible implementation, the first insulating layer and the second insulating layer are silicon dioxide layers.

[0016] In one possible implementation, the width of the supporting isolation beam is 10–30 μm.

[0017] Secondly, this utility model provides an in-situ multi-field coupling experimental platform for transmission electron microscopy, comprising: a sample rod for inserting the experimental platform into the tube of the transmission electron microscope; a double tilting stage disposed at the movable end of the sample rod and used to achieve biaxial tilting via the sample rod; and the aforementioned thermoelectric chip mounted on the double tilting stage.

[0018] In one possible implementation, a magnetic field generating device is also included, which is disposed on a double tilting platform and is used to generate a controllable magnetic field in the mounting section.

[0019] The thermoelectric chip provided by this invention features a suspended structure with a supporting isolation beam and a mounting portion within the central hole of the chip substrate. The mounting portion no longer directly contacts the chip substrate surface; instead, it is suspended by the supporting isolation beam, altering the heat conduction path. In existing technologies, a large-area direct heat conduction interface is formed between the mounting portion and the substrate. In this solution, heat is conducted only through the small supporting isolation beam, significantly reducing the heat conduction cross-sectional area. According to the principle of heat conduction, heat conduction power is proportional to the conduction cross-sectional area; therefore, the small cross-sectional area of ​​the supporting isolation beam greatly reduces heat conduction between the mounting portion and the chip substrate. When the mounting portion is heated, heat is mainly concentrated in the mounting portion area and is not lost to the substrate as much as in existing technologies, significantly improving heating efficiency. Simultaneously, temperature changes in the chip substrate no longer directly affect the mounting portion, resulting in significantly improved temperature control accuracy and stability. Furthermore, the reduced thermal coupling between the mounting portion and the substrate also improves the response speed of the temperature control system. Electrical control wires and temperature control wires extend to the mounting section via supporting isolation beams, ensuring that electrical functions remain intact while achieving thermal isolation, providing a reliable technical basis for in-situ multiphysics field experiments under transmission electron microscopy. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0021] Figure 1 This is a three-dimensional structural diagram of a thermoelectric chip provided by this utility model.

[0022] Figure 2 This is a schematic diagram of the planar structure of a thermoelectric chip provided by this utility model.

[0023] Figure 3 yes Figure 2 A magnified schematic diagram of the structure at point A.

[0024] Figure 4 This is a cross-sectional structural diagram of a mounting part provided by this utility model.

[0025] Figure 5This is a three-dimensional structural schematic diagram of an in-situ multi-field coupling experimental platform for transmission electron microscopy provided by this utility model.

[0026] Figure 6 This is a schematic diagram of the structure of a double tilting stage, thermoelectric chip, connecting components and magnetic field generating device provided by this utility model.

[0027] Figure label: 1. Chip substrate; 11. Center hole; 12. First insulating layer; 13. Second insulating layer; 14. Bonding section; 2. Supporting the isolation beam; 3. Mounting section; 31. Mounting area; 32. Through hole; 33. Heating area; 4. Electrical control wires; 5. Temperature control wire; 51. Heating unit; 6. Sample rod; 7. Double tilt stage; 8. Magnetic field generator; 9. Connecting assembly. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of this utility model clearer, the technical solutions of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0029] The following is combined with Figure 1-4 A thermoelectric chip provided in this embodiment of the present invention includes a chip substrate 1, a supporting isolation beam 2, a mounting part 3, an electrical control wire 4, and a temperature control wire 5, wherein: The chip substrate 1 has a central hole 11.

[0030] The supporting isolation beam 2 is disposed in the central hole 11, and one end of the supporting isolation beam 2 is connected to the chip substrate 1.

[0031] The mounting part 3 is connected to the supporting isolation beam 2. The mounting part 3 is located inside the central hole 11 and is used to carry the sample.

[0032] Electrical control wires 4 are disposed on the chip substrate 1 and extend to the mounting part 3 via the support isolation beam 2, for loading and measuring electrical signals on the sample in the mounting part 3.

[0033] Temperature control wire 5 is disposed on chip substrate 1 and extends to mounting part 3 via support isolation beam 2, and is used to control and detect the temperature of mounting part 3.

[0034] In this invention, by setting a suspended structure of supporting isolation beam 2 and mounting part 3 within the central hole 11 of the chip substrate 1, the mounting part 3 no longer directly contacts the surface of the chip substrate 1, but is suspended through the supporting isolation beam 2, thus changing the heat conduction path. In the prior art, a large area of ​​direct heat conduction interface is formed between the mounting part and the substrate, while in this solution, heat can only be conducted through the small supporting isolation beam 2, significantly reducing the heat conduction cross-sectional area. According to the principle of heat conduction, the heat conduction power is proportional to the conduction cross-sectional area, so the small cross-sectional area of ​​the supporting isolation beam 2 greatly reduces the heat conduction between the mounting part 3 and the chip substrate 1. When the mounting part 3 is heated, the heat is mainly concentrated in the area of ​​the mounting part 3, and will not be lost to the substrate in large quantities as in the prior art, thus significantly improving the heating efficiency; at the same time, the temperature change of the chip substrate 1 no longer directly affects the mounting part 3, resulting in a significant improvement in the temperature control accuracy and stability of the mounting part 3; in addition, due to the weakened thermal coupling between the mounting part 3 and the substrate, the response speed of the temperature control system is also improved. The electrical control wire 4 and the temperature control wire 5 extend to the mounting part 3 through the supporting isolation beam 2, ensuring that the electrical function is maintained while achieving thermal isolation, providing a reliable technical basis for in-situ experiments of multi-physics fields under transmission electron microscopy.

[0035] Specifically, the supporting isolation beam 2 serves as the sole heat conduction channel, and its small cross-sectional area significantly reduces the heat transferred from the chip substrate 1 to the mounting section 3. The electrical control wire 4 and temperature control wire 5 respectively handle the loading and measurement of electrical signals and the control and detection of temperature; the separation of these two functions ensures the independence and accuracy of their respective signals. The suspended position of the mounting section 3 within the central hole 11 provides a stable support platform for the sample.

[0036] In one specific embodiment, when it is necessary to study the in-situ phase transition behavior of nanomaterials under the action of an electric field, the electrical control wire 4 can apply a controllable electric field to the sample, the temperature control wire 5 can monitor and adjust the sample temperature in real time, and the transmission electron microscope can simultaneously observe the changes in the microstructure of the material. The ability to load multiple fields simultaneously provides unprecedented experimental means for materials science research.

[0037] In related technologies, traditional transmission electron microscope sample holders 6 typically only provide mechanical support and cannot simultaneously achieve electrical measurement and temperature control. While existing heated sample holders 6 can control temperature, they lack electrical measurement capabilities, and significant thermal coupling exists between the sample and the heating element, making precise temperature control difficult. In this embodiment, however, the suspended structure of the supporting isolation beam 2 effectively isolates the heat conduction path, significantly improving the temperature control accuracy of the mounting section 3. The simultaneous installation of electrical control wires 4 and temperature control wires 5 enables dual electrical and thermal regulation capabilities, providing a hardware foundation for complex multiphysics coupling experiments.

[0038] The chip substrate 1, the supporting isolation beam 2, and the mounting part 3 are integrally formed through a growth process. The growth process of the chip substrate 1, the mounting part 3, and the supporting isolation beam 2 in the thermoelectric chip is not the protection point of this utility model, so it will not be described in detail.

[0039] In some embodiments, the mounting part 3 is located at the midpoint of the supporting isolation beam 2.

[0040] In this invention, the mounting part 3 is positioned at the midpoint of the supporting isolation beam 2, ensuring that the distance from the mounting part 3 to the chip substrate 1 and to the beam end are equal, thus achieving a symmetrical distribution of the heat conduction path. Since thermal conductivity impedance is proportional to the conduction distance, the midpoint position ensures that the mounting part 3 achieves maximum thermal isolation, thereby improving the accuracy and stability of temperature control. Specifically, when the mounting part 3 is located at the midpoint of the supporting isolation beam 2, heat conducted from the chip substrate 1 to the mounting part 3 needs to travel a distance of half the beam length, and heat generated by the mounting part 3 dissipates to the end of the supporting isolation beam 2 by the same distance. This symmetrical heat conduction path facilitates the establishment and maintenance of thermal equilibrium in the mounting part 3.

[0041] In this embodiment of the invention, the heat conduction distance from the mounting portion 3 to the chip substrate 1 reaches its maximum value when the mounting portion 3 is located at the midpoint, effectively reducing the impact of the substrate temperature on the mounting portion 3. The midpoint positioning also ensures the symmetry of the forces on the mounting portion 3, avoiding mechanical deformation caused by asymmetrical forces and improving the reliability of the device.

[0042] In some embodiments, there are two supporting isolation beams 2, which are symmetrically distributed on both sides of the mounting part 3.

[0043] In this invention, two supporting isolation beams 2 are symmetrically distributed on both sides of the mounting part 3, which significantly improves the mechanical stability and load-bearing capacity of the mounting part 3 compared to single-beam support. The symmetrical distribution of the two beams ensures that the mounting part 3 is subjected to uniform force, avoiding tilting or vibration that may be caused by single-point support, and providing a more stable bearing environment for the sample.

[0044] Specifically, the two supporting isolation beams 2 each bear a portion of the mechanical load, halving the stress on a single beam and thus reducing the stress level of the beam structure. The symmetrically distributed beam structure forms a stable triangular support geometry, and the mounting part 3 has good stiffness in all directions. The arrangement of the two beams also provides separate wiring space for the electrical control wires 4 and the temperature control wires 5.

[0045] In one specific embodiment, when the sample mass is large or needs to withstand a certain external force, the double-beam structure can maintain the stability of the mounting part 3, ensuring that the sample position does not shift during transmission electron microscopy observation. Even under vibration conditions, the damping characteristics of the symmetrical double-beam structure are superior to those of the single-beam structure.

[0046] In some embodiments, a mounting region 31 is formed on the surface of the mounting part 3, and the mounting region 31 is used to carry the sample; the mounting part 3 is provided with a through hole 32 that penetrates the thickness direction of the mounting part, and the through hole 32 is disposed opposite to the mounting region 31 so that the electron beam can penetrate the sample through the through hole 32.

[0047] In this invention, a mounting area 31 is provided on the surface of the mounting part 3 to support the sample. A through hole 32 is provided through the mounting part 3, and the through hole 32 is positioned opposite to the mounting area 31, allowing the electron beam to penetrate the sample through the through hole 32, perfectly adapting to the working principle of a transmission electron microscope. The mounting area 31 provides a stable support platform for the sample, while the through hole 32 ensures the free passage of the electron beam, achieving an organic combination of sample support and electron beam transmission.

[0048] Specifically, the mounting area 31 is typically located on the upper surface of the mounting section 3, providing a flat bearing surface for the sample and ensuring good contact between the sample and the mounting section 3. A through-hole 32 extends from the upper surface to the lower surface of the mounting section 3, its position corresponding to the mounting area 31, and its aperture size is optimized according to observation requirements and sample size. The electron beam is emitted from the electron gun of the transmission electron microscope, passes through the sample, and continues through the through-hole 32 to reach the detector.

[0049] In some embodiments, a heating region 33 is formed on the surface of the mounting portion 3, and the heating region 33 is distributed around the mounting portion 31; the temperature control wire 5 includes a heating portion 51 located in the heating region 33.

[0050] In this invention, a heating region 33 is provided on the surface of the mounting part 3 surrounding the mounting region 31, and the heating part 51 of the temperature control wire 5 is arranged within the heating region 33, thereby achieving precise local heating of the sample. The layout of the heating region 33 surrounding the mounting region 31 ensures the uniformity of sample heating and avoids sample deformation or inconsistent performance caused by excessive temperature gradient.

[0051] Specifically, the heating region 33 is typically arranged in a ring or other surrounding shape around the mounting region 31. The heating element 51, as part of the temperature control wire 5, generates heat through resistance heating. Because the heating region 33 is adjacent to the mounting region 31, heat can be efficiently conducted to the sample, achieving rapid and precise temperature control. The surrounding arrangement of the heating region 33 also ensures the symmetry of the temperature field. The heating element 51 has an S-shaped reciprocating bending structure, increasing the space occupied by the heating control wire within the heating region 33 to achieve effective temperature control of the mounting region 3.

[0052] In one specific embodiment, when studying the thermally induced phase transition process of a material, the heating unit 51 can heat the sample according to a preset temperature curve, causing a phase transition in the sample within a uniform temperature field. The transmission electron microscope records the evolution of the microstructure in real time. The surrounding heating layout allows the phase transition process to occur synchronously throughout the entire observation area.

[0053] like Figure 4 As shown, in some embodiments, a first insulating layer 12 is disposed on the surface of the chip substrate 1, and a temperature control wire 5 is disposed on the first insulating layer 12; a second insulating layer 13 is disposed on the surface of the first insulating layer 12, and an electrical control wire 4 is disposed on the second insulating layer 13, wherein the second insulating layer 13 completely isolates the electrical control wire 4 from the temperature control wire 5.

[0054] In this invention, by sequentially setting a first insulating layer 12, a temperature control wire 5, a second insulating layer 13, and an electrical control wire 4 on the surface of the chip substrate 1, complete electrical isolation between the two functional wires is achieved. The second insulating layer 13, as a complete isolation layer, completely separates the electrical control wire 4 from the temperature control wire 5, effectively preventing crosstalk between the electrical signal and the temperature signal, and ensuring the accuracy and reliability of the measurement data.

[0055] Specifically, the first insulating layer 12 isolates the temperature control wire 5 from the chip substrate 1, preventing interference from the substrate to the temperature signal. The second insulating layer 13 covers the first insulating layer 12 and the temperature control wire 5, forming a continuous insulating layer that provides an insulating substrate for the electrical control wire 4. This layered structure ensures electrical independence between the layers while maintaining good mechanical bonding. The first insulating layer 12 and the second insulating layer 13 are respectively provided on the supporting isolation beam 2 and the mounting portion, achieving sufficient isolation between the electrical control wire 4 and the temperature control wire 5.

[0056] In one specific embodiment, when electrical performance testing and temperature control are performed simultaneously, the weak electrical signal transmitted by the electrical control wire 4 is not interfered with by the larger current in the temperature control wire 5. The accuracy of temperature measurement is also unaffected by the presence of the electrical signal, achieving truly independent multi-field measurements.

[0057] In some embodiments, the first insulating layer 12 and the second insulating layer 13 are oxide layers, specifically silicon dioxide layers.

[0058] In this invention, silicon dioxide is selected as the material for the first insulating layer 12 and the second insulating layer 13, making full use of silicon dioxide's excellent electrical insulation properties and thermal stability. Silicon dioxide has extremely high dielectric strength and low dielectric loss, and can maintain stable insulation properties over a wide temperature and voltage range, providing reliable electrical isolation for multilayer conductor structures.

[0059] Among them, the appendix Figure 4 The diagram shows the thickness of the electrical control wire 4, temperature control wire 5, and oxide layer. The actual thickness of the electrical control wire 4, temperature control wire 5, and oxide layer is several hundred nanometers, which is significantly different from the thickness of the device layer of the chip substrate 1. The diagram only shows the layered relationship of the electrical control wire 4, temperature control wire 5, and oxide layer, not their proportional relationship.

[0060] In some embodiments, the corners of the electrical control wire 4 and the temperature control wire 5 are obtuse angle structures or rounded corner structures.

[0061] In this invention, the corners of the electrical control wire 4 and the temperature control wire 5 are designed as obtuse or rounded corners, which effectively improves the uniformity of current distribution and reduces stress concentration. The obtuse or rounded geometry makes the current flow at the corners smoother, avoiding sudden changes in current density caused by sharp angles, thereby reducing local heating and electromigration effects.

[0062] Specifically, obtuse-angle structures typically refer to designs with corner angles greater than 90 degrees, while rounded-corner structures use rounded transitions to connect two straight conductors. The non-sharp corner shape mitigates abrupt changes in current direction, resulting in a more uniform distribution of current density in the corner region. Furthermore, obtuse-angle and rounded-corner structures exhibit significantly lower stress concentration factors under mechanical stress compared to right-angle designs.

[0063] In some embodiments, a bonding section 14 is provided on the surface of the chip substrate 1, and the electrical control wire 4 and the temperature control wire 5 are electrically connected to the bonding section 14.

[0064] In this invention, a bonding section 14 is provided on the surface of the chip substrate 1 and electrically connected to the electrical control wire 4 and the temperature control wire 5, establishing a reliable electrical interface between the thermoelectric chip and the external control circuit. The bonding section 14, as a dedicated connection area, facilitates external connections using standard packaging processes such as wire bonding, ensuring the stability and consistency of the electrical connection.

[0065] Specifically, the bonding pad 14 is typically designed as a large-area metal pad, with its size and shape adapted to standard wire bonding process requirements. Electrical control leads 4 and temperature control leads 5 extend from within the chip to their respective bonding pads 14, achieving electrical connection with external leads through the bonding pads 14. The metal layer of the bonding pad 14 is typically made of materials with good soldering properties, such as gold or aluminum.

[0066] In this embodiment of the invention, the specially designed pressure welding part 14 separates the connection function from the device function, protecting the core functional area from the influence of the connection process. The large contact area and dedicated connection design of the pressure welding part 14 ensure the mechanical strength and electrical performance of the connection, improving the overall reliability of the device.

[0067] In some embodiments, the width of the supporting isolation beam 2 is 10–30 μm.

[0068] In this invention, the width of the supporting isolation beam 2 is limited to the range of 10–30 μm, achieving an optimal balance between thermal insulation performance and mechanical strength. Within this width range, the supporting isolation beam 2 has sufficient mechanical strength to support the weight of the mounting part 3 and the sample, while maintaining a small thermal conduction cross-sectional area, thus ensuring good thermal insulation effect.

[0069] Specifically, the thermal conductivity of the supporting isolation beam 2 is directly proportional to its cross-sectional area, while its mechanical strength is mainly determined by its geometric dimensions and material properties. A lower limit width of 10μm ensures sufficient mechanical strength to prevent fracture under normal operating loads. An upper limit width of 30μm controls the thermal conductivity cross-section from becoming too large, ensuring the effectiveness of thermal isolation.

[0070] like Figure 5 and 6 As shown, this utility model provides an in-situ multi-field coupling experimental platform for transmission electron microscopy, including: a sample rod 6 for inserting the experimental platform into the transmission electron microscope tube; a double tilting stage 7, which is set at the movable end of the sample rod 6 and realizes dual-axis tilting through the sample rod 6; and the aforementioned thermoelectric chip, which is mounted on the double tilting stage 7.

[0071] In this invention, a complete in-situ multi-field coupling experimental platform for transmission electron microscopy (TEM) is constructed by mounting a thermoelectric chip on a dual tilting stage 7 and connecting it to a transmission electron microscope (TEM) via a sample rod 6. This platform organically combines the multi-physics control capability of the thermoelectric chip with the high-resolution observation capability of the TEM, enabling real-time observation of the multi-physics response behavior of materials at the atomic scale.

[0072] Specifically, the sample holder 6 serves as a standard transmission electron microscope (TEM) interface, ensuring compatibility between the experimental platform and various TEM models. The dual tilt stage 7 provides the ability to tilt the sample in two orthogonal directions, allowing observation of the sample's microstructure from multiple angles. The thermoelectric chip-integrated electrical control wires 4 and temperature control wires 5 enable the simultaneous application of electric and temperature fields during observation.

[0073] In some embodiments, a magnetic field generating device 8 is also included, which is disposed on the double tilting platform 7 and is used to generate a controllable magnetic field in the mounting part 3.

[0074] In this invention, a magnetic field generating device 8 is added to the in-situ multi-field coupling experimental platform of a transmission electron microscope, further expanding the capability of multi-physics field coupling experiments and realizing the simultaneous loading of electric, magnetic, and temperature fields. The magnetic field generating device 8 is set on the double tilting stage 7 and generates a controllable magnetic field in the mounting part 3, enabling the study of the microscopic behavior and phase transition process of materials under complex magneto-electro-thermal coupling environments.

[0075] Specifically, the magnetic field generating device 8 typically employs a small electromagnet or permanent magnet structure, capable of generating a magnetic field of tens to several Tesla in the sample region where the mounting section 3 is located. The direction and intensity of the magnetic field can be adjusted by controlling the current, achieving precise control of the magnetic field. The compact design of the magnetic field generating device 8 ensures that it will not interfere with the electron optics system of the transmission electron microscope.

[0076] In some embodiments, a connecting component 9 is also included. One end of the connecting component 9 is connected to the terminal of the sample rod 6, and the other end is electrically connected to the dual tilt stage 7. The dual tilt stage 7 is also electrically connected to the electrical control wires and temperature control wires on the thermoelectric chip.

[0077] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without any creative effort.

[0078] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and not to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model.

Claims

1. A thermoelectric chip, characterized in that, include: A chip substrate (1) is provided with a central hole (11). A supporting isolation beam (2) is disposed in the central hole (11), and one end of the supporting isolation beam (2) is connected to the chip substrate (1); The mounting part (3) is connected to the supporting isolation beam (2), and the mounting part (3) is located inside the central hole (11) for carrying the sample; An electrical control wire (4) is disposed on the chip substrate (1) and extends to the mounting part (3) via the support isolation beam (2) for loading and measuring electrical signals on the sample in the mounting part (3); Temperature control wire (5) is disposed on the chip substrate (1) and extends to the mounting part (3) via the support isolation beam (2) for controlling and detecting the temperature of the mounting part (3).

2. The thermoelectric chip according to claim 1, characterized in that, The mounting part (3) is located at the midpoint of the supporting isolation beam (2).

3. The thermoelectric chip according to claim 1, characterized in that, There are two supporting isolation beams (2), which are symmetrically distributed on both sides of the mounting part (3).

4. The thermoelectric chip according to claim 1, characterized in that, The surface of the mounting part (3) is formed with a mounting area (31), which is used to support the sample; the mounting part (3) is provided with a through hole (32) that penetrates the thickness direction of the mounting part (3), and the through hole (32) is disposed opposite to the mounting area (31) so that the electron beam can penetrate the sample through the through hole (32).

5. The thermoelectric chip according to claim 4, characterized in that, The surface of the mounting part (3) has a heating area (33) which is distributed around the mounting part (31); the temperature control wire (5) includes a heating part (51) located in the heating area (33).

6. The thermoelectric chip according to any one of claims 1-5, characterized in that, The chip substrate (1) has a first insulating layer (12) on its surface, and the temperature control wire (5) is disposed on the first insulating layer (12); the first insulating layer (12) has a second insulating layer (13) on its surface, and the electrical control wire (4) is disposed on the second insulating layer (13), and the second insulating layer (13) is located between the electrical control wire (4) and the temperature control wire (5).

7. The thermoelectric chip according to any one of claims 1-5, characterized in that, The corners of the electrical control wire (4) and the temperature control wire (5) are obtuse or rounded.

8. The thermoelectric chip according to any one of claims 1-5, characterized in that, The chip substrate (1) has a bonding section (14) on its surface, and the electrical control wire (4) and the temperature control wire (5) are electrically connected to the bonding section (14).

9. A transmission electron microscope in-situ multi-field coupling experimental platform, characterized in that, include: Sample rod (6) is used to insert the experimental platform into the tube of the transmission electron microscope; A double tilting stage (7) is set at the movable end of the sample rod (6) and achieves biaxial tilting through the sample rod (6); The thermoelectric chip as described in any one of claims 1-8 is mounted on the dual tilting stage (7).

10. The in-situ multi-field coupling experimental platform for transmission electron microscopy according to claim 9, characterized in that, It also includes a magnetic field generating device (8), which is disposed on the double tilting platform (7) and is used to generate a controllable magnetic field in the mounting part (3).

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