A chip IO interface layout structure

CN224789199UActive Publication Date: 2026-09-22CHINA MICRO SEMICON (SHENZHEN) CO LTD
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Patent Information

Application Number
CN202522317971.5
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-10-31
Publication Date
2026-09-22
Estimated Expiration
2035-10-31

AI Technical Summary

Benefits of technology

1)本申请将芯片所有的IO接口版图设计成一个模块,整体模块的长度与芯片其中一边的长度一致,放置芯片一侧边缘。芯片IO接口的电源地线无需在芯片周围一圈布线,提升芯片面积利用率,减少布线通道,减小芯片面积。

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Abstract

The utility model discloses a kind of chip IO interface's layout structure, it is related to the technical field of semiconductor chip design, including first analog layout area, second analog layout area, first digital layout area, second digital layout area, first ESD protection area, first driving area, second ESD protection area, third ESD protection area, second driving area and fourth ESD protection area;The utility model optimizes the layout structure of IO interface, reasonably distinguishes each circuit function module, each function module designs layout isolation measure, improves chip performance.According to packaging wire bonding requirement, all IO interface layout of chip is designed into the module with one side of chip equal length, improve chip area utilization, reduce parasitic resistance caused by power ground wire winding, reduce chip winding channel, reduce chip area while improving chip performance.
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Description

Technical Field

[0001] This utility model relates to the field of semiconductor chip design technology, and specifically to a layout structure for a chip I / O interface. Background Technology

[0002] In semiconductor chip design, layout design is a crucial step in transforming circuit design into a tangible, manufacturable form (FAB). The quality of the layout design directly impacts chip performance, while the size of the layout area directly affects chip cost. With the rapid advancement of semiconductor technology, there are increasingly higher demands on chip performance and area. Optimizing the layout design structure to reduce chip area costs and improve chip performance is of great significance in chip design.

[0003] I / O interfaces serve as the bridge between a chip and external devices, placing high demands on the layout design of ESD and LATCHUP interfaces. These interfaces are numerous and constitute a significant portion of the chip's area. Therefore, optimizing the layout of I / O interfaces can improve chip performance and effectively reduce chip area costs. Summary of the Invention

[0004] The purpose of this invention is to overcome the shortcomings of the prior art and provide a layout structure for a chip I / O interface.

[0005] The objective of this utility model is achieved through the following technical solution: This utility model discloses a layout structure for a chip I / O interface, including a first analog layout area, a second analog layout area, a first digital layout area, a second digital layout area, a first ESD protection area, a first driver area, a second ESD protection area, a third ESD protection area, a second driver area, and a fourth ESD protection area. The second analog layout area is located at the upper left of the chip layout, the first analog layout area is located below the second analog layout area, the second digital layout area is located to the right of the second analog layout area, and the first digital layout area is located below the second digital layout area and to the right of the first analog layout area; the first ESD protection area is located below the first digital layout area and below the first analog layout area; the first driving area is located below the first ESD protection area, the second ESD protection area is located below the first driving area, the third ESD protection area is located below the second ESD protection area, the second driving area is located below the third ESD protection area, and the fourth ESD protection area is located below the second driving area.

[0006] Furthermore, the right edge of the second analog layout area is aligned with the left edge of the second digital layout area, the lower edge of the second analog layout area is aligned with the upper edge of the first analog layout area, the upper edge of the first digital layout area is aligned with the lower edge of the second digital layout area, and the left edge of the first digital layout area is aligned with the right edge of the first analog layout area; the upper edge of the first ESD protection zone is aligned with the lower edges of the first digital layout area and the first analog layout area, the lower edge of the first ESD protection zone is aligned with the upper edge of the first driving area, the lower edge of the first driving area is aligned with the upper edge of the second ESD protection zone, the lower edge of the second ESD protection zone is aligned with the upper edge of the third ESD protection zone, the lower edge of the third ESD protection zone is aligned with the upper edge of the second driving area, and the lower edge of the second driving area is aligned with the upper edge of the fourth ESD protection zone.

[0007] Furthermore, the first analog layout area, the second analog layout area, the first digital layout area, the second digital layout area, the first ESD protection area, the first driving area, the second ESD protection area, the third ESD protection area, the second driving area, and the fourth ESD protection area are rectangular.

[0008] Furthermore, PAD modules are respectively provided on the first and second driving areas for connecting the chip to external circuits and realizing the input / output interface of electrical signals; P-drive and ESD protection modules are respectively provided on the first and third ESD protection areas for providing driving capability for positive field-effect transistors (PMOS) and integrating electrostatic discharge (ESD) protection function to prevent electrostatic damage; N-drive and ESD protection modules are respectively provided on the second and fourth ESD protection areas for providing driving capability for negative field-effect transistors (NMOS) and integrating ESD protection function; analog switch modules are respectively provided on the first and second analog layout areas for controlling the transmission path of analog signals between the chip and the outside, realizing the switching of analog signals; digital control modules and digital output modules are respectively provided on the first and second digital layout areas. The digital control module controls the analog switch module, N-drive and ESD protection module, and P-drive and ESD protection module through logic circuits to coordinate the signal transmission timing; the digital output module is used for the transmission of digital signals between the chip and the outside, realizing the output interface of digital signals.

[0009] Furthermore, the first driving area is connected to the first ESD protection zone, the second ESD protection zone, the first analog layout area and the first digital layout area by wiring, and the first digital layout area is connected to the first ESD protection zone, the second ESD protection zone and the first analog layout area by wiring; The second drive area is connected to the third ESD protection area, the fourth ESD protection area, the second analog layout area and the second digital layout area by wiring, and the second digital layout area is connected to the third ESD protection area, the fourth ESD protection area and the second analog layout area by wiring.

[0010] The beneficial effects of this utility model are: 1) This application designs all the I / O interface layouts of the chip into a single module, with the overall module length matching the length of one side of the chip, and places it on one edge of the chip. The power and ground lines of the chip's I / O interfaces do not need to be routed around the chip, improving chip area utilization, reducing wiring paths, and decreasing chip area.

[0011] 2) This application shortens the ESD discharge path length of the IO interface layout and reduces the metal parasitic resistance on the ESD discharge path, which is beneficial to improving ESD performance.

[0012] 3) This application divides the layout modules of the IO interface according to their functions, separates the driver and ESD protection areas from the digital layout area and the analog layout area, and implements layout isolation measures to reduce parasitic effects in the layout and improve the LATCHUP capability. Attached Figure Description

[0013] Figure 1 This is a circuit schematic diagram of the layout structure of a chip I / O interface according to an embodiment of the present invention; Figure 2 This is a schematic diagram of a chip layout structure for a chip I / O interface according to an embodiment of the present invention. Figure 3 This is a schematic diagram of the overall chip layout of a chip I / O interface according to an embodiment of the present invention. Detailed Implementation

[0014] The technical solution of this utility model will be clearly and completely described below with reference to the embodiments. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0015] This utility model discloses a layout structure for a chip's I / O interface. Based on the chip packaging and wire bonding requirements, a regional overall layout is implemented, making all the chip's I / O interface layouts into a single rectangular module. The length of this module is the same as the length of one side of the chip, and it is placed along one edge of the chip to improve chip area utilization. Each functional module is clearly defined, and the driver and ESD protection areas are separated from the digital and analog layout areas. The layout design incorporates isolation measures to reduce parasitic effects, shorten the ESD discharge path, and improve chip performance. A schematic diagram of the overall chip layout is shown below. Figure 3 As shown, the power and ground lines of the I / O interface layout do not need to be wound around the chip, reducing the winding channels and chip area; the chip layout structure diagram is shown below. Figure 2 As shown, Figure 2 In this design, two I / O interface layouts are merged into a small module, with the PAD window area placed vertically. M of these small modules are then sequentially assembled into a rectangular module with the same height as one side of the chip. Specifically, this includes a first analog layout area, a second analog layout area, a first digital layout area, a second digital layout area, a first ESD protection zone, a first driver area, a second ESD protection zone, a third ESD protection zone, a second driver area, and a fourth ESD protection zone. The second analog layout area is located at the upper left of the chip layout, the first analog layout area is located below the second analog layout area, the second digital layout area is located to the right of the second analog layout area, and the first digital layout area is located below the second digital layout area and to the right of the first analog layout area; the first ESD protection area is located below the first digital layout area and below the first analog layout area; the first driving area is located below the first ESD protection area, the second ESD protection area is located below the first driving area, the third ESD protection area is located below the second ESD protection area, the second driving area is located below the third ESD protection area, and the fourth ESD protection area is located below the second driving area.

[0016] For example, the right edge of the second analog layout area is aligned with the left edge of the second digital layout area, the lower edge of the second analog layout area is aligned with the upper edge of the first analog layout area, the upper edge of the first digital layout area is aligned with the lower edge of the second digital layout area, and the left edge of the first digital layout area is aligned with the right edge of the first analog layout area; the upper edge of the first ESD protection zone is aligned with the lower edges of the first digital layout area and the first analog layout area, the lower edge of the first ESD protection zone is aligned with the upper edge of the first drive area, the lower edge of the first drive area is aligned with the upper edge of the second ESD protection zone, the lower edge of the second ESD protection zone is aligned with the upper edge of the third ESD protection zone, the lower edge of the third ESD protection zone is aligned with the upper edge of the second drive area, and the lower edge of the second drive area is aligned with the upper edge of the fourth ESD protection zone.

[0017] For example, the first analog layout area, the second analog layout area, the first digital layout area, the second digital layout area, the first ESD protection area, the first driver area, the second ESD protection area, the third ESD protection area, the second driver area, and the fourth ESD protection area are rectangular. This improves chip utilization by merging all the chip's I / O interface layouts into the same module, resulting in shorter power and ground connections and shorter ESD discharge paths, which is beneficial for improving ESD performance.

[0018] For example, the circuit schematic is as follows Figure 1 As shown, PAD modules are respectively provided on the first and second driving areas for connecting the chip to external circuits and realizing the input / output interface of electrical signals; P-drive and ESD protection modules are respectively provided on the first and third ESD protection areas to provide driving capability for positive field-effect transistors (PMOS) and integrate electrostatic discharge (ESD) protection function to prevent electrostatic damage; N-drive and ESD protection modules are respectively provided on the second and fourth ESD protection areas to provide driving capability for negative field-effect transistors (NMOS) and integrate ESD protection function; analog switch modules are respectively provided on the first and second analog layout areas to control the transmission path of analog signals between the chip and the outside, realizing the switching of analog signals; digital control modules and digital output modules are respectively provided on the first and second digital layout areas. The digital control module controls the analog switch module, N-drive and ESD protection module, and P-drive and ESD protection module through logic circuits to coordinate the signal transmission timing; the digital output module is used for the transmission of digital signals between the chip and the outside, realizing the output interface of digital signals.

[0019] For example, the first driving area is connected to the first ESD protection zone, the second ESD protection zone, the first analog layout area, and the first digital layout area via wiring, and the first digital layout area is connected to the first ESD protection zone, the second ESD protection zone, and the first analog layout area via wiring, respectively; the second driving area is connected to the third ESD protection zone, the fourth ESD protection zone, the second analog layout area, and the second digital layout area via wiring, and the second digital layout area is connected to the third ESD protection zone, the fourth ESD protection zone, and the second analog layout area via wiring, respectively.

[0020] In summary, in order to achieve the goal of "designing all I / O interface layouts of the chip as modules with the same length as one side of the chip", this utility model designs all I / O interface layouts... Figure 1 To prevent the integrated rectangular module from becoming too long, which would result in an overly elongated chip, a less square chip, and reduced chip area utilization, the traditional approach of one I / O interface layout corresponding to one PAD window, with the entire chip's windows arranged in a single row, has been redesigned. Instead, two I / O interface layouts are integrated into a single module, with the PAD windows placed vertically. This results in two rows of windows on the entire chip, increasing the overall height of the I / O layout module and decreasing its width, making the entire module more square. This improves the area utilization of the chip outside the I / O interface layout module and facilitates the layout of other layout modules.

[0021] The above description is merely a preferred embodiment of this utility model. It should be understood that this utility model is not limited to the forms disclosed herein and should not be construed as excluding other embodiments. It can be used in various other combinations, modifications, and environments, and can be altered within the scope of the concept described herein through the above teachings or related technologies or knowledge. Modifications and variations made by those skilled in the art that do not depart from the spirit and scope of this utility model should be protected within the scope of the appended claims.

Claims

1. A layout structure for a chip I / O interface, characterized in that, It includes a first analog map area, a second analog map area, a first digital map area, a second digital map area, a first ESD protection zone, a first drive zone, a second ESD protection zone, a third ESD protection zone, a second drive zone, and a fourth ESD protection zone; The second analog layout area is located at the upper left of the chip layout, the first analog layout area is located below the second analog layout area, the second digital layout area is located to the right of the second analog layout area, and the first digital layout area is located below the second digital layout area and to the right of the first analog layout area; The first ESD protection zone is located below the first digital map area and below the first analog map area; the first driving area is located below the first ESD protection zone, the second ESD protection zone is located below the first driving area, the third ESD protection zone is located below the second ESD protection zone, the second driving area is located below the third ESD protection zone, and the fourth ESD protection zone is located below the second driving area.

2. The layout structure of a chip I / O interface according to claim 1, characterized in that: The right edge of the second analog layout area is aligned with the left edge of the second digital layout area, the bottom edge of the second analog layout area is aligned with the top edge of the first analog layout area, the top edge of the first digital layout area is aligned with the bottom edge of the second digital layout area, and the left edge of the first digital layout area is aligned with the right edge of the first analog layout area. The upper edge of the first ESD protection zone is aligned with the lower edge of the first digital layout area and the lower edge of the first analog layout area. The lower edge of the first ESD protection zone is aligned with the upper edge of the first driving area. The lower edge of the first driving area is aligned with the upper edge of the second ESD protection zone. The lower edge of the second ESD protection zone is aligned with the upper edge of the third ESD protection zone. The lower edge of the third ESD protection zone is aligned with the upper edge of the second driving area. The lower edge of the second driving area is aligned with the upper edge of the fourth ESD protection zone.

3. The layout structure of a chip I / O interface according to claim 1, characterized in that: The first simulated map area, the second simulated map area, the first digital map area, the second digital map area, the first ESD protection area, the first driving area, the second ESD protection area, the third ESD protection area, the second driving area, and the fourth ESD protection area are rectangular.

4. The layout structure of a chip I / O interface according to claim 1, characterized in that: PAD modules are respectively provided on the first driving area and the second driving area for chip connection to external circuits to realize the input / output interface of electrical signals; P driving and ESD protection modules are respectively provided on the first ESD protection area and the third ESD protection area to provide driving capability of positive field-effect transistors PMOS and integrate electrostatic discharge ESD protection function to prevent electrostatic damage. The second and fourth ESD protection zones are respectively equipped with N-drive and ESD protection modules to provide driving capability for the negative field-effect transistor (NMOS) and integrate electrostatic discharge (ESD) protection functions. The first and second analog layout areas are respectively equipped with analog switch modules to control the transmission paths of analog signals between the chip's internal and external environments, enabling the switching of analog signals. The first and second digital layout areas are respectively equipped with digital control modules and digital output modules. The digital control module controls the analog switch modules, N-drive and ESD protection modules, and P-drive and ESD protection modules through logic circuits, coordinating signal transmission timing. The digital output module is used for the transmission of digital signals between the chip's internal and external environments, realizing the digital signal output interface.

5. The layout structure of a chip I / O interface according to claim 1, characterized in that: The first driving area is connected to the first ESD protection area, the second ESD protection area, the first analog layout area and the first digital layout area by wiring, and the first digital layout area is connected to the first ESD protection area, the second ESD protection area and the first analog layout area by wiring; The second drive area is connected to the third ESD protection area, the fourth ESD protection area, the second analog layout area and the second digital layout area by wiring, and the second digital layout area is connected to the third ESD protection area, the fourth ESD protection area and the second analog layout area by wiring.