Radio frequency power control apparatus and semiconductor manufacturing apparatus

Abstract

The application relates to a radio frequency power supply control device and a semiconductor manufacturing device. The radio frequency power supply control device comprises a first radio frequency power supply and at least one second radio frequency power supply, the first radio frequency power supply is in communication connection with the at least one second radio frequency power supply; the second radio frequency power supply is used for sending first power supply data to the first radio frequency power supply; the first radio frequency power supply is used for receiving the first power supply data and adjusting a power output characteristic of the first radio frequency power supply according to the first power supply data, so that a matching state of the second radio frequency power supply is matched. The radio frequency power supply control device provided by the application can improve the real-time performance of controlling each radio frequency power supply.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a radio frequency power supply control device and a semiconductor manufacturing device. Background Technology

[0002] In semiconductor manufacturing equipment, multiple radio frequency (RF) power supplies are typically required to operate simultaneously. This means that the host computer in the semiconductor manufacturing equipment controls multiple RF power supplies to send RF energy to the semiconductor process chamber in order to achieve a stable plasma space within the semiconductor process chamber.

[0003] In traditional technologies, a host computer in semiconductor manufacturing equipment typically controls multiple RF power supplies directly by setting power or output targets. However, the real-time performance of controlling multiple RF power supplies via a host computer in traditional technologies is insufficient. Utility Model Content

[0004] Therefore, it is necessary to provide an RF power supply control device and a semiconductor manufacturing device to address the aforementioned technical problems.

[0005] In a first aspect, one embodiment of this application provides a radio frequency power supply control device, including: a first radio frequency power supply and at least one second radio frequency power supply, wherein the first radio frequency power supply is communicatively connected to the at least one second radio frequency power supply;

[0006] The second radio frequency power supply is used to send the first power data to the first radio frequency power supply;

[0007] The first radio frequency power supply is used to receive the first power supply data and adjust the power output characteristics of the first radio frequency power supply according to the first power supply data so that the matching state of the second radio frequency power supply is matched.

[0008] In one embodiment, the first radio frequency power supply includes a first communication module, the second radio frequency power supply includes a second communication module, and the first communication module and the second communication module are communicatively connected.

[0009] In one embodiment, the radio frequency power control device further includes a communication bus connected between the first communication module and the second communication module.

[0010] In one embodiment, the communication bus includes any one of an Ethernet bus, a serial communication bus, and a Fibre Channel.

[0011] In one embodiment, the first radio frequency power supply includes a plurality of radio frequency sub-power supplies, each radio frequency sub-power supply being communicatively connected to at least one second radio frequency power supply.

[0012] In one embodiment, the radio frequency power control device further includes a control component, which is communicatively connected to the first radio frequency power supply and the second radio frequency power supply, respectively.

[0013] A control component is used to control the operation of the first RF power supply and the second RF power supply, and to receive the operating status of the first RF power supply and the second RF power supply.

[0014] In one embodiment, the first radio frequency power supply includes a first diagnostic module, the second radio frequency power supply includes a second diagnostic module, the first diagnostic module is connected to the second radio frequency power supply, and the second diagnostic module is connected to the first radio frequency power supply.

[0015] The first diagnostic module is used to diagnose whether the first radio frequency power supply is abnormal, and to perform any one of the following based on the diagnostic results: self-adjustment or sending warning information to the second radio frequency power supply and / or control components.

[0016] The second diagnostic module is used to diagnose whether the second radio frequency power supply is abnormal, and to perform any one of the following based on the diagnostic results: self-adjustment or sending warning information to the first radio frequency power supply and / or control components.

[0017] In one embodiment, the first radio frequency power supply includes a first matching module, which is communicatively connected to the second radio frequency power supply;

[0018] The first matching module is used to receive the first power data and determine the matching status of the second RF power supply based on the first power data.

[0019] In one embodiment, the second radio frequency power supply includes a second matching module, which is communicatively connected to the first radio frequency power supply;

[0020] The second matching module is used to receive the second power data sent by the first RF power supply and determine the matching status of the first RF power supply based on the second power data.

[0021] Secondly, one embodiment of this application provides a semiconductor manufacturing apparatus, including the radio frequency power control device as described in the first aspect above.

[0022] This application provides an RF power supply control device and a semiconductor manufacturing apparatus. The RF power supply control device includes a first RF power supply and at least one second RF power supply. The first RF power supply is communicatively connected to the at least one second RF power supply. The second RF power supply is used to send first power data to the first RF power supply; the first RF power supply is used to receive the first power data and adjust its power output characteristics according to the first power data to achieve a matched state for the second RF power supply. In this embodiment, the first RF power supply can receive the first power data sent by the second RF power supply. Compared with the communication between the host computer and the second RF power supply in the prior art, the latency can be as low as microseconds, which can improve the real-time performance of controlling the second RF power supply. Furthermore, by adjusting the power output characteristics of the first RF power supply according to the first power data to achieve a matched state for the second RF power supply, the stability of the plasma can be guaranteed, thereby widening the process window. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this application or the conventional technology, the drawings used in the description of the embodiments or the conventional technology will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 This is a schematic diagram of the structure of a radio frequency power control device provided in one embodiment of this application;

[0025] Figure 2 This is a schematic diagram of the structure of a radio frequency power control device provided in another embodiment of this application;

[0026] Figure 3 This is a schematic diagram of the structure of a radio frequency power control device provided in another embodiment of this application;

[0027] Figure 4 This is a schematic diagram of the structure of a radio frequency power control device provided in another embodiment of this application;

[0028] Figure 5 This is a flowchart illustrating the steps of a radio frequency power supply control method provided in one embodiment of this application;

[0029] Figure 6 A flowchart illustrating the steps of a radio frequency power control method provided in another embodiment of this application;

[0030] Figure 7 A flowchart illustrating the steps of a radio frequency power control method provided in another embodiment of this application.

[0031] Explanation of reference numerals in the attached figures:

[0032] 10. Radio frequency power supply control device; 100. Control component; 200. First radio frequency power supply; 210. First communication module; 220. First diagnostic module; 300. Second radio frequency power supply; 310. Second communication module; 320. Second diagnostic module; 400. Communication bus. Detailed Implementation

[0033] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0034] The serial numbers assigned to components in this document, such as "first" and "second," are used solely to distinguish the described objects and have no sequential or technical meaning. The terms "connection" and "linkage" used in this application, unless otherwise specified, include both direct and indirect connections (linkages). It should be understood that the terms "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are used solely for the convenience of describing this application and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0035] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0036] First, before introducing the technical solutions of the embodiments disclosed in this application, the background technology or technological evolution on which the embodiments of this application are based will be introduced. In semiconductor manufacturing equipment, multiple radio frequency (RF) power supplies typically need to operate simultaneously. That is, the host computer in the semiconductor manufacturing equipment controls multiple RF power supplies to send RF energy to the semiconductor process chamber to achieve a stable plasma space within the semiconductor process chamber. In conventional technology, the host computer in the semiconductor manufacturing equipment usually directly controls the operation of multiple RF power supplies by setting power or output targets. However, traditional semiconductor manufacturing equipment that controls multiple RF power supplies via a host computer suffers from several problems. For example, the host computer sends commands to each RF power supply via standard communication buses (e.g., RS232, ECAT, Ethernet), resulting in long command transmission links, multiple protocol layers, and communication delays typically in the millisecond range or even higher. The commands issued by the host computer represent global process objectives, lacking sufficient awareness of transient coupling relationships between RF power supplies, potentially causing a disconnect between commands and the dynamics of the semiconductor process chamber. The inability of each RF power supply to share its operating status in real time leads to delays in adjustment responses. Simultaneous operation of multiple RF power supplies can cause interference, uneven power distribution, and even plasma instability. The lack of fault tolerance and redundancy mechanisms across RF power supplies results in poor process stability. Therefore, the real-time performance of traditional host computer-controlled RF power supplies is insufficient. To address this, this application provides an RF power supply control device.

[0037] The technical solution of this application and how it solves the technical problems will be described in detail below with specific embodiments. These specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments. The embodiments of this application will be described below with reference to the accompanying drawings.

[0038] Please see Figure 1 One embodiment of this application provides an RF power supply control device 10, including a first RF power supply 200 and at least one second RF power supply 300. The RF power supply control device 10 may include one or more second RF power supplies 300. Both the first RF power supply 200 and the second RF power supply 300 are power supplies for transmitting RF energy into a semiconductor process cavity. The first RF power supply 200 and the second RF power supply 300 may be the same or different. This embodiment does not limit the specific types of the first RF power supply 200 and the second RF power supply 300, as long as their functions can be achieved.

[0039] In an optional embodiment, the first RF power supply 200 can be an upper power supply, i.e., a source RF generator, or a lower power supply, i.e., a bias RF generator. The upper power supply is used to generate and maintain plasma; the lower power supply is used to apply a bias voltage to the wafer / substrate disposed in the semiconductor process chamber to control the energy and direction of ion bombardment. The second RF power supply 300 can be either an upper power supply or a lower power supply. It is understood that the RF power supply control device 10 may include one upper power supply and one or more lower power supplies, or it may include one lower power supply and one or more upper power supplies, or it may include multiple upper power supplies or multiple lower power supplies.

[0040] The first radio frequency power supply 200 is communicatively connected to at least one second radio frequency power supply 300. The communication connection between the first radio frequency power supply 200 and the second radio frequency power supply 300 can be wired or wireless. When the radio frequency power supply control device 10 includes multiple second radio frequency power supplies 300, the first radio frequency power supply 200 can be communicatively connected to any one of the multiple second radio frequency power supplies 300, or it can be communicatively connected to each of the second radio frequency power supplies 300.

[0041] In an optional embodiment, if the communication connection between the first RF power supply 200 and the second RF power supply 300 is wireless, wireless communication methods such as wireless local area network or Bluetooth can be used.

[0042] The second RF power supply 300 is used to send first power data to the first RF power supply 200. During operation, the second RF power supply 300 sends its own first power data to the first RF power supply 200. The first power data refers to various data generated during the operation of the second RF power supply 300.

[0043] In one embodiment, the first power supply data includes at least one of output power, output impedance, and matching state. It is understood that the first power supply data refers to the output power, output impedance, and matching state of the second RF power supply 300 during operation. The matching state may refer to the matching state between the output impedance of the second RF power supply 300 and the load impedance within the semiconductor process cavity.

[0044] The first RF power supply 200 is used to receive the first power data sent by the second RF power supply 300, and adjust the power output characteristics of the first RF power supply 200 according to the first power data so that the matching state of the second RF power supply 300 is matched.

[0045] The power output characteristics include RF power magnitude, RF frequency waveform phase, power overshoot magnitude, and power overshoot time. After receiving the first power data, the first RF power supply 200 can determine the matching state of the second RF power supply 300 based on the first power data. If the matching state of the second RF power supply 300 is mismatched, the power output characteristics of the first RF power supply 200 can be adjusted to make the matching state of the second RF power supply 300 match.

[0046] In an optional embodiment, the first RF power supply 200 can also acquire its own second power data, determine its matching state based on the second power data, and adjust its power output characteristics to achieve a matched state if the first RF power supply 200's matching state is mismatched. In other words, by adjusting its own power output characteristics, the first RF power supply 200 ultimately achieves a matched state with both the first RF power supply 200 and the second RF power supply 300.

[0047] The radio frequency (RF) power supply control device 10 provided in this application embodiment includes a first RF power supply 200 and at least one second RF power supply 300; the first RF power supply 200 and the at least one second RF power supply 300 are communicatively connected. The second RF power supply 300 is used to send first power data to the first RF power supply 200; the first RF power supply 200 is used to receive the first power data and adjust its power output characteristics according to the first power data to achieve a matched state for the second RF power supply. In this embodiment, the first RF power supply 200 can receive the first power data from the second RF power supply 300. Compared with the prior art where communication between the first RF power supply 200 and the second RF power supply 300 is via a host computer, the latency can be as low as microseconds, improving the real-time performance of controlling the second RF power supply 300. Furthermore, by adjusting the power output characteristics of the first RF power supply 200 according to the first power data to achieve a matched state for the second RF power supply 300, plasma stability can be guaranteed, thereby widening the process window.

[0048] In one embodiment, the first RF power supply 200 is further configured to send second power data to the second RF power supply 300; the second RF power supply 300 is further configured to receive the second power data and adjust the power output characteristics of the second RF power supply 300 according to the second power data so that the matching state of the first RF power supply 200 and the second RF power supply 300 is matched; the second power data includes at least one of output power, output impedance and matching state.

[0049] The description of the second power supply data can be found in the detailed description of the first power supply data in the above embodiments, and will not be repeated here.

[0050] The first RF power supply 200 can send its own second power data to the second RF power supply 300. After receiving the second power data, the second RF power supply 300 will determine the matching status of the first RF power supply 200 based on the second power data, and adjust the power output characteristics of the second RF power supply 300 if the matching status is mismatched.

[0051] In an optional embodiment, the second RF power supply 300 can also acquire its own first power data, determine its matching state based on the first power data, and adjust its power output characteristics to achieve a matched state if the matching state of the second RF power supply 300 is mismatched. In other words, by adjusting its own power output characteristics, the second RF power supply 300 ultimately achieves a matched state for both the first RF power supply 200 and the second RF power supply 300.

[0052] In another optional embodiment, when the matching state of the first RF power supply 200 is mismatched and the matching state of the second RF power supply 300 is mismatched, the second RF power supply 300 adjusts its own power output characteristics, and the first RF power supply 200 also adjusts its own power output characteristics, so that the matching states of the first RF power supply 200 and the second RF power supply 300 are both matched.

[0053] In this embodiment, the second RF power supply 300 can receive the second power data from the first RF power supply 200. Compared with the prior art where communication between the first RF power supply 200 and the host computer is conducted, the latency can be as low as microseconds, improving the real-time performance of controlling the second RF power supply 300. Furthermore, by adjusting their power output characteristics, the second RF power supply 300 and the first RF power supply 200 can achieve a matched state, ensuring plasma stability and improving the collaborative control capability between the RF power supplies. This also broadens the process window.

[0054] In one embodiment, such as Figure 2 As shown, the first radio frequency power supply 200 includes a first communication module 210, and the second radio frequency power supply 300 includes a second communication module 310. The first communication module 210 and the second communication module 310 are connected in communication.

[0055] The first RF power supply 200 and the second RF power supply 300 are connected via a first communication module 210 and a second communication module 310. The first communication module 210 and the second communication module 310 are of the same type. The type of the first communication module 210 and the second communication module 310 is related to the communication protocol used to connect the first RF power supply 200 and the second RF power supply 300. This application embodiment does not limit this, as long as its function can be achieved.

[0056] In an optional embodiment, the first communication module 210 and the second communication module 310 are communication chips corresponding to the communication protocol.

[0057] In this embodiment, the first radio frequency power supply 200 and the second radio frequency power supply 300 are connected through the first communication module 210 and the second communication module 310, which can improve the efficiency and stability of communication between the first radio frequency power supply 200 and the second radio frequency power supply 300, thereby improving the performance of the radio frequency power supply control device 10.

[0058] In one embodiment, the communication connection between the first RF power supply 200 and the second RF power supply 300 is a wired connection. In this case, please refer to [link to previous document]. Figure 2 The radio frequency power control device 10 also includes a communication bus 400, which is connected between the first communication module 210 and the second communication module 310; the communication bus 400 includes any one of Ethernet bus, serial communication bus and fiber optic channel.

[0059] The type of communication bus 400 is related to the communication protocol. If the communication protocol of the first communication module 210 and the second communication module 310 is the Industrial Ethernet protocol, then the communication bus 400 is an Ethernet bus. If the communication protocol of the first communication module 210 and the second communication module 310 is the Controller Area Network (CAN) protocol, then the communication bus 400 is a CAN bus. The first communication module 210 and the second communication module 310 can be connected via a fiber optic channel.

[0060] In this embodiment, the first communication module 210 and the second communication module 310 are connected by a communication bus 400, which can reduce the number of wires, reduce physical costs, improve communication performance, and ensure communication reliability, thereby improving the performance and reliability of the radio frequency power control device 10.

[0061] In one embodiment, the first radio frequency power supply 200 includes a plurality of radio frequency sub-power supplies, each radio frequency sub-power supply being communicatively connected to at least one second radio frequency power supply 300.

[0062] The multiple radio frequency sub-power supplies in the first radio frequency power supply 200 may be of the same or different types. Each radio frequency sub-power supply is communicatively connected to at least one second radio frequency power supply 300. For a description of the types of radio frequency sub-power supplies, please refer to the specific description of the types of the first radio frequency power supply 200 and the second radio frequency power supply 300 in the above embodiments; it will not be repeated here.

[0063] In one specific embodiment, the first RF power supply 200 includes multiple RF sub-power supplies as upper power supplies, and at least one second RF power supply 300 as a lower power supply. Each upper power supply is communicatively connected to the second RF power supply 300. The RF power supply control device 10 includes multiple second RF power supplies 300, which are communicatively connected in pairs. That is, the multiple RF sub-power supplies and the multiple second RF power supplies 300 form a mesh communication structure.

[0064] In this embodiment, the first radio frequency power supply 200 includes multiple radio frequency sub-power supplies, each of which is communicatively connected to at least one second radio frequency power supply 300. This enables the radio frequency power supply control device 10 to be expanded to include multiple radio frequency power supplies, and the multiple radio frequency power supplies can share data, thereby improving the performance of the radio frequency power supply control device 10.

[0065] In one embodiment, such as Figure 3 As shown, the radio frequency power control device 10 also includes a control component 100, which is communicatively connected to the first radio frequency power supply 200 and the second radio frequency power supply 300.

[0066] The control component 100 can be a host computer or a supervisory computer. Specifically, the control component 100 can be an industrial-grade central processing unit (CPU). The control component 100 is communicatively connected to the first RF power supply 200 and the second RF power supply 300, respectively. The communication connection between the control component 100 and the first RF power supply 200 and the second RF power supply 300 can be wired or wireless.

[0067] The control component 100 is used to control the operation of the first RF power supply 200 and the second RF power supply 300, and to receive the operating status of the first RF power supply 200 and the second RF power supply 300.

[0068] The control component 100 can send control commands to the first RF power supply 200 according to the requirements of the semiconductor fabrication process, to control the first RF power supply 200 to start working, that is, to control the first RF power supply 200 to transmit RF energy. The first RF power supply 200 can send its operating status to the control component 100. The operating status of the first RF power supply 200 includes whether the first RF power supply 200 is working normally, the output power level and mode of the first RF power supply 200, and the matching status of the first RF power supply 200, etc. The output power mode can be a continuous wave or a pulse wave. The control component 100 can send control commands to the second RF power supply 300 according to the requirements of the semiconductor fabrication process, to control the second RF power supply 300 to start working, that is, to control the second RF power supply 300 to transmit RF energy. The second RF power supply 300 can send its operating status to the control component 100. The description of the operating status of the second RF power supply 300 can refer to the specific description of the operating status of the first RF power supply 200 in the above embodiments, and will not be repeated here.

[0069] In this embodiment, the control component 100 in the radio frequency power control device 10 can receive the operating status of the first radio frequency power supply 200 and the second radio frequency power supply 300, thereby monitoring the operating status of the first radio frequency power supply 200 and the second radio frequency power supply 300, so as to make timely adjustments when the first radio frequency power supply 200 or the second radio frequency power supply 300 has a problem, thereby improving the reliability and practicality of the radio frequency power control device 10.

[0070] In one embodiment, such as Figure 4 As shown, the first radio frequency power supply 200 includes a first diagnostic module 220, and the second radio frequency power supply 300 includes a second diagnostic module 320. The first diagnostic module 220 is connected to the second radio frequency power supply 300, and the second diagnostic module 320 is connected to the first radio frequency power supply 200.

[0071] A first diagnostic module 220 is integrated into the first RF power supply 200, and the first diagnostic module 220 is communicatively connected to the second RF power supply 300. Specifically, the first diagnostic module 220 is communicatively connected to the second RF power supply 300 through a first communication module 210. The first diagnostic module 220 is used to diagnose whether the first RF power supply 200 is abnormal, and, based on the diagnostic results, to perform self-adjustment or send warning information to the second RF power supply 300 and / or the control component 100. The first diagnostic module 220 can perform self-diagnosis on the first RF power supply 200 to determine whether the first RF power supply 200 is abnormal, that is, to determine whether the first RF power supply 200 has failed. The diagnostic results include the first RF power supply 200 being abnormal and the first RF power supply 200 being normal. In the case of an abnormality in the first RF power supply 200, self-adjustment can be performed. If the first RF power supply 200 returns to normal through self-adjustment, then the first RF power supply 200 operates normally; if the first RF power supply 200 cannot return to normal through self-adjustment, then the first RF power supply 200 is controlled to shut down, that is, the first RF power supply 200 is controlled to stop outputting RF energy. If the first RF power supply 200 cannot be restored to normal operation through self-adjustment, a warning message can be sent to the second RF power supply 300 and / or the control component 100, so that the second RF power supply 300 and / or the control component 100 control the first RF power supply 200 to stop outputting RF energy. The warning message includes information indicating that the first RF power supply 200 is malfunctioning.

[0072] Preferably, if self-adjustment fails to restore the first RF power supply 200 to normal and it cannot be turned off, a warning message is sent to the second RF power supply 300 so that the second RF power supply 300 controls the first RF power supply 200 to turn off. This improves the communication efficiency between the first RF power supply 200 and the second RF power supply 300, thereby improving the efficiency of turning off the first RF power supply 200 and enhancing the protection of other components. This makes the RF power supply control device 10 more reliable and performs better.

[0073] The second RF power supply 300 integrates a second diagnostic module 320, which is communicatively connected to the first RF power supply 200. Specifically, the second diagnostic module 320 communicates with the first RF power supply 200 through a second communication module 310. The second diagnostic module 320 is used to diagnose whether the second RF power supply 300 is abnormal, and based on the diagnostic results, performs self-adjustment or sends warning information to the first RF power supply 200 and / or the control component 100. The second diagnostic module 320 can perform self-diagnosis on the second RF power supply 300 to determine whether the second RF power supply 300 is abnormal, i.e., whether the second RF power supply 300 has failed. The diagnostic results include both abnormal and normal operation of the second RF power supply 300. In the event of an abnormality in the second RF power supply 300, self-adjustment can be performed. If the self-adjustment restores the second RF power supply 300 to normal operation, then the second RF power supply 300 operates normally; if the self-adjustment fails to restore the second RF power supply 300 to normal operation, then the second RF power supply 300 is shut down, i.e., the second RF power supply 300 stops outputting RF energy. If the second RF power supply 300 cannot be restored to normal operation through self-adjustment, a warning message can be sent to the first RF power supply 200 and / or the control component 100 to cause the first RF power supply 200 and / or the control component 100 to control the second RF power supply 300 to shut down. The warning message includes information indicating that the second RF power supply 300 is malfunctioning.

[0074] Preferably, if the self-adjustment fails to shut down the second RF power supply 300, a warning message is sent to the first RF power supply 200 so that the first RF power supply 200 controls the second RF power supply 300 to shut down. This improves the communication efficiency between the first RF power supply 200 and the second RF power supply 300, thereby improving the efficiency of shutting down the second RF power supply 300 and enhancing the protection of other components. This makes the RF power supply control device 10 more reliable and performs better.

[0075] In an optional embodiment, the first diagnostic module 220 may be a control chip integrated in the first RF power supply 200, and the second diagnostic module 320 may be a control chip integrated in the second RF power supply 300.

[0076] In this embodiment, a first diagnostic module 220 is integrated into the first RF power supply 200. The first diagnostic module 220 can diagnose whether the first RF power supply 200 is abnormal, and in the event of an abnormality, perform self-adjustment, send warning information to the first RF power supply 200 and / or the control component 100, and protect other components in the RF power supply control device 10. Similarly, a second diagnostic module 320 is integrated into the second RF power supply 300. The second diagnostic module 320 can diagnose whether the second RF power supply 300 is abnormal, and in the event of an abnormality, perform self-adjustment, send warning information to the first RF power supply 200 and / or the control component 100, and protect other components in the RF power supply control device 10, thereby improving the performance and reliability of the RF power supply control device 10.

[0077] In one embodiment, the first RF power supply 200 further includes a first matching module, and the second RF power supply 300 further includes a second matching module. The first matching module and the second matching module communicate through a first communication module 210 and a second communication module 310. The first matching module can receive first power data of the second RF power supply 300 sent by the second matching module, and adjust the power output characteristics of the first RF power supply 200 according to the first power data. The second matching module can receive second power data of the first RF power supply 200 sent by the first matching module, and adjust the power output characteristics of the second RF power supply 300 according to the second power data. For a description of the first matching module adjusting the power output characteristics of the first RF power supply 200 according to the first power data, and the second matching module adjusting the power output characteristics of the second RF power supply 300 according to the second power data, please refer to the specific description of the above embodiment.

[0078] In an optional embodiment, the first matching module may be a control chip integrated in the first RF power supply 200, and the second matching module may be a control chip integrated in the second RF power supply 300.

[0079] Please see Figure 5 One embodiment of this application provides a radio frequency power supply control method, which is applied to a first radio frequency power supply in the radio frequency power supply control device provided in the above embodiment. The method includes the following steps:

[0080] Step 501: Receive the control command sent by the control component and start working in response to the control command.

[0081] When control of the first RF power supply is required, the control component sends a control command to the first RF power supply. The first RF power supply responds to the control command and begins operation, i.e., it transmits RF energy. The control command may include power-on commands, operating mode switching commands, RF power setting commands, impedance matching commands, etc. This embodiment does not limit the specific content of the control commands sent by the control component, as long as they achieve the desired function.

[0082] Step 502: Receive the first power data sent by the second RF power supply, and adjust the power output characteristics of the first RF power supply according to the first power data so that the matching state of the second RF power supply is matched.

[0083] The first and second radio frequency (RF) power supplies are communicatively connected. During operation, the second RF power supply can send first power data to the first RF power supply. A description of the first power data can be found in the detailed description of the above embodiments, and will not be repeated here. After receiving the first power data sent by the second RF power supply, the first RF power supply adjusts its power output characteristics according to the first power data, ensuring that the second RF power supply is in a matched state.

[0084] The radio frequency (RF) power supply control method provided in this application receives control commands sent by a control component and starts working in response to the control commands; it receives first power data sent by a second RF power supply and adjusts the power output characteristics of the first RF power supply according to the first power data to make the matching state of the second RF power supply matched. In this embodiment, the first RF power supply can receive the first power data sent by the second RF power supply. Compared with the prior art where communication between the first RF power supply and the second RF power supply is through a host computer, the latency can be reduced to the microsecond level, which can improve the real-time performance of controlling the first RF power supply. Furthermore, by adjusting the power output characteristics of the first RF power supply, the matching state of the second RF power supply can be made matched, which can ensure the stability of the plasma, thereby improving the ability of coordinated control between the RF power supplies and thus widening the process window.

[0085] In one embodiment, the method further includes the following steps:

[0086] The power output characteristics of the first RF power supply are adjusted according to the second power supply data so that the matching state of the first RF power supply is matched.

[0087] The first RF power supply 200 can acquire its own second power supply data, determine its matching state based on the second power supply data, and adjust its power output characteristics to achieve a matched state if the first RF power supply 200's matching state is mismatched. In other words, by adjusting its own power output characteristics, the first RF power supply 200 ultimately achieves a matched state with both the first RF power supply 200 and the second RF power supply 300.

[0088] In this embodiment, by adjusting its own power output characteristics, the first RF power supply 200 can not only achieve a matched state, but also the second RF power supply 300 can achieve a matched state, which can ensure the stability of the plasma and improve the ability of coordinated control between the first RF power supply 200 and the second RF power supply 300, thereby widening the process window.

[0089] In one embodiment, the steps of the radio frequency power supply control method further include:

[0090] Send second power data to the second RF power supply so that the second RF power supply adjusts its power output characteristics according to the second power data, so that the first RF power supply is in a matched state; the second power data includes at least one of output power, output impedance and matching state.

[0091] The first RF power supply can send its second power supply data to the second RF power supply. After receiving the second power supply data, the second RF power supply will determine the matching status of the first RF power supply based on the second power supply data. If the matching status is mismatched, the second RF power supply will adjust its power output characteristics. The description of the second power supply data can be found in the specific description in the above embodiments, and will not be repeated here.

[0092] In an optional embodiment, the second RF power supply 300 can also acquire its own first power data, determine its matching state based on the first power data, and adjust its power output characteristics to achieve a matched state if the matching state of the second RF power supply 300 is mismatched. In other words, by adjusting its own power output characteristics, the second RF power supply 300 ultimately ensures that both the first RF power supply 200 and its matching state, as well as the matching state of the second RF power supply 300, are matched.

[0093] In this embodiment, the first RF power supply can send second power data to the second RF power supply, and the second RF power supply receives the second power data. Compared with the prior art where communication between the first RF power supply and the host computer is conducted, the latency can be as low as microseconds, which can improve the real-time performance of controlling the first and second RF power supplies, thereby enhancing the collaborative control capability between the RF power supplies. Furthermore, by adjusting their own power output characteristics, the second and first RF power supplies can achieve a matched state, ensuring plasma stability and thus widening the process window.

[0094] In one embodiment, such as Figure 6 As shown, this involves an implementation method that adjusts the power output characteristics of a first RF power supply based on first power supply data to ensure that the matching state of the second RF power supply is also matched. The steps of this implementation method include:

[0095] Step 601: Determine whether the matching status of the second RF power supply is matched based on the first power supply data.

[0096] After receiving the first power data sent by the second RF power supply, the first RF power supply determines the matching state of the second RF power supply based on the first power data. Specifically, it determines the matching state between the second RF power supply and the semiconductor process chamber, that is, the matching state between the output impedance of the second RF power supply and the load impedance within the semiconductor process chamber. This embodiment does not limit the specific method for determining the matching state of the second RF power supply based on the first power data, as long as the function can be achieved.

[0097] Step 602: If the matching state is mismatched, adjust the power output characteristics of the first RF power supply, and after adjustment, return to the step of receiving the first power data sent by the second RF power supply until the matching state of the second RF power supply is matched.

[0098] If the first RF power supply determines that the matching status of the second RF power supply is mismatched, the first RF power supply adjusts the power output characteristics of the first RF power supply and then returns to step 502 after adjustment. That is, it re-receives the first power data sent by the second RF power supply, judges the matching status of the second RF power supply again based on the first power data, and repeats the above process until the matching status of the second RF power supply is matched.

[0099] In this embodiment, when the first RF power supply determines that the matching state of the second RF power supply is mismatched based on the received first power supply data, the matching state of the second RF power supply can be adjusted by adjusting the power output characteristics of the first RF power supply. This improves the real-time performance of controlling the second RF power supply, ensures the stability of the plasma in the semiconductor process chamber, reduces the probability of anomalies, and thus improves the practicality of the RF power supply control method.

[0100] In one embodiment, the radio frequency power supply control method further includes:

[0101] The system diagnoses whether the first radio frequency power supply is abnormal, obtains the diagnostic results, and performs one of the following based on the diagnostic results: self-adjustment or sending a warning message to the second radio frequency power supply and / or control components.

[0102] The first radio frequency (RF) power supply can perform self-diagnosis to determine whether it is abnormal and obtain diagnostic results. The diagnostic results include whether the first RF power supply is abnormal or normal. If the diagnostic result indicates that the first RF power supply is abnormal, it can perform self-adjustment or send a warning message to the second RF power supply and / or the control component. The description of either self-adjustment of the first RF power supply or sending a warning message to the second RF power supply and / or the control component can be found in the specific description of the above embodiments, and will not be repeated here.

[0103] In this embodiment, the first radio frequency power supply can perform self-diagnosis, and if the diagnosis result indicates that the first radio frequency power supply is abnormal, it can perform self-adjustment and send warning information to the second radio frequency power supply and / or control components. In this way, if the first radio frequency power supply is abnormal, other components in the radio frequency power supply control device can be protected, thereby improving the practicality of the radio frequency power supply control method.

[0104] In one embodiment, the steps of the radio frequency power supply control method further include:

[0105] Send the operating status of the first radio frequency power supply to the control component.

[0106] During operation, the first RF power supply sends its operating status to the control component, allowing the control component to monitor the operation of the first RF power supply. For example, the control component can determine whether the output power of the first RF power supply meets the requirements based on its operating status.

[0107] In this embodiment, the control component can acquire the operating status of the first RF power supply to monitor the operating status of the first RF power supply in real time, so as to make timely adjustments when the first RF power supply malfunctions, thereby improving the practicality of the RF power supply control method.

[0108] Another embodiment of this application provides a radio frequency (RF) power supply control method, which is applied to a second RF power supply in the RF power supply control device provided in the above embodiments. For the specific steps of this method, please refer to the detailed description of the RF power supply control method applied to a first RF power supply in the RF power supply control device in the above embodiments, and will not be repeated here.

[0109] Please see Figure 7 One embodiment of this application provides a radio frequency circuit control method, the steps of which include:

[0110] Step 700: The control component sends control commands to the first radio frequency power supply and at least one second radio frequency power supply;

[0111] Step 701: The first radio frequency power supply and at least one second radio frequency power supply start operating in response to the control command;

[0112] Step 702: The second RF power supply acquires its own first power data and sends the first power data to the first RF power supply;

[0113] Step 703: The first RF power supply acquires its own second power supply data and sends the second power supply data to the second RF power supply;

[0114] Step 704: The first RF power supply determines whether the matching status of the second RF power supply is matched based on the first power supply data;

[0115] Step 705: If the first RF power supply determines that the matching state of the second RF power supply is mismatched, adjust the power output characteristics of the first RF power supply and return to the step 702 in which the second RF power supply sends the first power data to the first RF power supply until the matching state of the second RF power supply is matched.

[0116] Step 706: The first RF power supply determines whether the matching status of the first RF power supply is matched based on the second power supply data;

[0117] Step 707: If the first RF power supply determines that the matching state of the first RF power supply is mismatched, adjust the power output characteristics of the first RF power supply and return to the step of obtaining its own second power supply data in step 703 until the matching state of the first RF power supply is matched.

[0118] Step 708: The second RF power supply determines whether the matching status of the first RF power supply is matched based on the second power supply data;

[0119] Step 709: If the second RF power supply determines that the matching state of the first RF power supply is mismatched, adjust the power output characteristics of the second RF power supply and return to the step 703 in which the first RF power supply sends the second power data to the second RF power supply until the matching state of the first RF power supply is matched.

[0120] Step 710: The second RF power supply determines whether the matching status of the second RF power supply is matched based on the first power supply data;

[0121] Step 711: If the second RF power supply determines that the matching state of the second RF power supply is matched, adjust the power output characteristics of the first RF power supply, and return to the step of the second RF power supply obtaining its own first power data in step 702, until the matching state of the second RF power supply is matched.

[0122] Ultimately, this ensures that both the first and second RF power supplies are in a matched state.

[0123] One embodiment of this application provides a semiconductor manufacturing apparatus, including the radio frequency power control device as provided in the above embodiment.

[0124] Semiconductor manufacturing equipment is the "core production tool" of the chip industry, serving as the crucial carrier for transforming designed circuit blueprints into physical chips. Semiconductor manufacturing, through precise control of materials, energy, and environment at the micron and nanometer scale, completes the entire process from blank wafers (such as silicon wafers) to functional chips, spanning the two core stages of "wafer manufacturing (front-end process)" and "packaging and testing (back-end process)," directly determining the chip's process precision, performance indicators, and production yield. In the semiconductor manufacturing process, the radio frequency (RF) power supply control equipment, by precisely regulating RF power, provides a stable plasma environment for key processes such as etching and thin-film deposition, directly determining the chip circuit's precision, uniformity, and production yield.

[0125] The semiconductor manufacturing equipment provided in this application includes the radio frequency power control device as provided in the above embodiments. The semiconductor manufacturing equipment has all the beneficial effects of the radio frequency power control device, which will not be repeated here. The performance and reliability of the semiconductor manufacturing equipment can be improved by setting up the radio frequency power device.

[0126] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0127] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A radio frequency power supply control device, characterized in that, include: A first radio frequency power supply and at least one second radio frequency power supply, wherein the first radio frequency power supply is communicatively connected to at least one second radio frequency power supply; The second radio frequency power supply is used to send first power data to the first radio frequency power supply; The first radio frequency power supply is used to receive the first power supply data and adjust the power output characteristics of the first radio frequency power supply according to the first power supply data so that the matching state of the second radio frequency power supply is matched.

2. The radio frequency power supply control device according to claim 1, characterized in that, The first radio frequency power supply includes a first communication module, and the second radio frequency power supply includes a second communication module. The first communication module and the second communication module are connected in communication.

3. The radio frequency power supply control device according to claim 2, characterized in that, The radio frequency power control device also includes a communication bus, which is connected between the first communication module and the second communication module.

4. The radio frequency power supply control device according to claim 3, characterized in that, The communication bus includes any one of Ethernet bus, serial communication bus and Fibre Channel.

5. The radio frequency power supply control device according to claim 1, characterized in that, The first radio frequency power supply includes multiple radio frequency sub-power supplies, each of which is communicatively connected to at least one second radio frequency power supply.

6. The radio frequency power supply control device according to claim 1, characterized in that, The radio frequency power supply control device further includes a control component, which is communicatively connected to the first radio frequency power supply and the second radio frequency power supply respectively. The control component is used to control the operation of the first radio frequency power supply and the second radio frequency power supply, and to receive the operating status of the first radio frequency power supply and the operating status of the second radio frequency power supply.

7. The radio frequency power supply control device according to claim 6, characterized in that, The first radio frequency power supply includes a first diagnostic module, and the second radio frequency power supply includes a second diagnostic module. The first diagnostic module is connected to the second radio frequency power supply, and the second diagnostic module is connected to the first radio frequency power supply. The first diagnostic module is used to diagnose whether the first radio frequency power supply is abnormal, and to perform any one of the following based on the diagnostic results: self-adjustment or sending warning information to the second radio frequency power supply and / or control components. The second diagnostic module is used to diagnose whether the second radio frequency power supply is abnormal, and to perform any one of the following based on the diagnostic results: self-adjustment or sending warning information to the first radio frequency power supply and / or control components.

8. The radio frequency power supply control device according to claim 1, characterized in that, The first radio frequency power supply includes a first matching module, which is communicatively connected to the second radio frequency power supply; The first matching module is used to receive the first power data and determine the matching status of the second radio frequency power supply based on the first power data.

9. The radio frequency power supply control device according to claim 1, characterized in that, The second radio frequency power supply includes a second matching module, which is communicatively connected to the first radio frequency power supply. The second matching module is used to receive the second power data sent by the first RF power supply, and determine the matching status of the first RF power supply based on the second power data.

10. A semiconductor manufacturing apparatus, characterized in that, Includes the radio frequency power control device as described in any one of claims 1-9.

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