Wafer fixing device for ion etching equipment and ion etching equipment

Abstract

The utility model discloses a kind of wafer fixing devices and ion etching equipment for ion etching equipment, comprising: support disc and circumferential limit ring, support disc and circumferential limit ring are arranged along first direction and contact, support disc and circumferential limit ring jointly define the installation groove for installing wafer, along first direction, the end portion of installation groove away from support disc is opened to form taking and placing mouth;Axial limit body, axial limit body is located at the side of circumferential limit ring away from support disc and with the end surface of circumferential limit ring away from support disc contact, axial limit body covers part of taking and placing mouth and is suitable for with wafer in installation groove contact limit. Thus, by the wafer fixing device of the present application, effectively prevent the oily volatile in vacuum grease from affecting wafer surface etching process, and reduce short-circuit risk, while reducing the risk of pollution caused by processing cavity and wafer, realize the effect of non-pollution, non-particle, non-oil class volatile fixed wafer.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor micro-nano processing equipment technology, and in particular to a wafer fixing device for ion etching equipment and an ion etching equipment having the wafer fixing device. Background Technology

[0002] In related technologies, ion etching equipment is used to process wafers. The ion etching equipment etches the wafer to complete the wafer processing. Existing solutions fix the wafer by applying vacuum grease to the bottom of the wafer. However, vacuum grease can cause the following problems when the ion etching equipment is operating: The first problem is that, under vacuum and high-temperature conditions, the oil in the vacuum grease in the ion etching equipment evaporates into the processing chamber of the ion etching equipment, affecting the etching process on the wafer surface.

[0003] The second problem is that the friction between vacuum grease and the ion etching equipment generates organic particles, which can block the etched area on the wafer surface and cause short circuits.

[0004] The third problem is that vacuum grease reacts with some of the etching gases to form polymers, which are deposited inside the processing chamber of the ion etching equipment and on the wafer surface, causing contamination to the processing chamber and the wafer. Utility Model Content

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, one objective of the present invention is to provide a wafer fixing device for ion etching equipment, which can fix the wafer in the mounting groove, achieving the effect of fixing the wafer without pollution, particles, or oil volatilization.

[0006] This invention further proposes an ion etching device.

[0007] A wafer fixing device for an ion etching apparatus according to an embodiment of the present invention includes: The support plate and the circumferential limiting ring are arranged and in contact along a first direction. The support plate and the circumferential limiting ring together define a mounting groove for mounting a wafer. Along the first direction, the end of the mounting groove away from the support plate is open to form a pick-and-place opening. An axial limiting body is located on the side of the circumferential limiting ring away from the support plate and contacts the end face of the circumferential limiting ring away from the support plate. The axial limiting body covers the part of the pick-and-place opening and is suitable for contacting and limiting the wafer in the mounting slot.

[0008] The wafer fixing device for ion etching equipment according to the present invention can fix the wafer in the mounting groove. Compared with the prior art, it does not require vacuum grease to fix the wafer. Under vacuum and high temperature conditions, it effectively prevents the oily volatile substances of vacuum grease from affecting the wafer surface etching process. In addition, it avoids organic particles generated by the friction between vacuum grease and the ion etching equipment from obscuring the wafer surface etching area, reducing the risk of short circuit. At the same time, it avoids the reaction between vacuum grease and some etching gas to generate polymers that are deposited inside the processing cavity of the ion etching equipment and on the wafer surface, reducing the risk of contamination of the processing cavity of the ion etching equipment and the wafer, and achieving the effect of fixing the wafer without pollution, particles, or oil volatilization.

[0009] In some examples of this utility model, the support disk is constructed as a heat-conducting structure.

[0010] In some examples of this utility model, the support disk is a graphite support disk.

[0011] In some examples of this utility model, the circumferential limiting ring is a circular ring structure. The inner wall of the circumferential limiting ring includes a first arc-shaped wall and a first planar wall. Along the circumference of the circumferential limiting ring, the first planar wall is connected between the two ends of the first arc-shaped wall.

[0012] In some examples of this utility model, the axial limiting body is a ring structure. The axial limiting body extends circumferentially along the circumferential limiting ring. Part of the axial limiting body is opposite to and in contact with the end face of the circumferential limiting ring away from the support plate. Another part of the axial limiting body is opposite to the pick-up and put-out port to cover the part of the pick-up and put-out port.

[0013] In some examples of this utility model, the axial limiting body is a ring structure, and the inner wall of the axial limiting body includes a second arc-shaped wall and a second planar wall. Along the circumference of the axial limiting body, the second planar wall is connected between the two ends of the second arc-shaped wall.

[0014] In some examples of this utility model, the support plate has a first mounting hole, the circumferential limiting ring has a second mounting hole, and the axial limiting body has a third mounting hole. The first mounting hole, the second mounting hole, and the third mounting hole are opposite each other along the first direction. Fasteners are inserted through the first mounting hole, the second mounting hole, and the third mounting hole to fix the wafer fixing device to the ion etching equipment.

[0015] In some examples of this utility model, there are multiple first assembly holes, multiple second assembly holes and multiple third assembly holes, and the multiple first assembly holes, multiple second assembly holes and multiple third assembly holes correspond one-to-one.

[0016] In some examples of this utility model, the surface of the support disk facing the circumferential limiting ring is a support plane.

[0017] The ion etching apparatus according to an embodiment of the present invention includes the wafer fixing device for the ion etching apparatus described above.

[0018] Additional aspects and advantages of this invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0019] The above and / or additional aspects and advantages of this utility model will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which: Figure 1 This is a schematic diagram of a support plate according to an embodiment of the present utility model; Figure 2 This is a schematic diagram of a circumferential limiting ring according to an embodiment of the present utility model; Figure 3 This is a schematic diagram of an axial limiting body according to an embodiment of the present utility model.

[0020] Figure label: Support plate 10; First assembly hole 11; Support plane 12; Circumferential limiting ring 20; First arc-shaped wall 21; First planar wall 22; Second assembly hole 23; Axial limiting body 30; second arc-shaped wall 31; second planar wall 32; third assembly hole 33. Detailed Implementation

[0021] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.

[0022] The following is for reference. Figures 1-3 The present invention describes a wafer fixing device for an ion etching apparatus according to an embodiment of the present invention. When the ion etching apparatus processes and etches a wafer, the wafer fixing device is located in the processing cavity of the ion etching apparatus, and the wafer is fixed to the wafer fixing device. The wafer fixing device can be fixed on the stage of the ion etching apparatus.

[0023] like Figures 1-3As shown, a wafer fixing device for an ion etching apparatus according to an embodiment of the present invention includes: a support disk 10 and a circumferential limiting ring 20, the support disk 10 and the circumferential limiting ring 20 being arranged and in contact along a first direction, the support disk 10 and the circumferential limiting ring 20 jointly defining a mounting groove for mounting a wafer, the end of the mounting groove opposite to the support disk 10 being open along the first direction to form a pick-and-place opening; and an axial limiting body 30, the axial limiting body 30 being located on the side of the circumferential limiting ring 20 opposite to the support disk 10 and in contact with the end face of the circumferential limiting ring 20 opposite to the support disk 10, the axial limiting body 30 covering the portion of the pick-and-place opening and being adapted to contact and limit the wafer in the mounting groove.

[0024] The wafer fixing device is fixedly mounted on the stage. The wafer fixing device can be fixed to the stage with bolts or by snap-fit. The wafer fixing device includes a support disk 10, a circumferential limiting ring 20, and an axial limiting body 30. The support disk 10 can be a plate-like structure. The support disk 10 and the circumferential limiting ring 20 are arranged along a first direction, and the surface of the support disk 10 facing the circumferential limiting ring 20 and the surface of the circumferential limiting ring 20 facing the support disk 10 are in contact. The first direction can be the height direction of the wafer fixing device; in other words, the first direction can be the vertical direction. This application uses the example of the circumferential limiting ring 20 being located above the support disk 10 for illustration. The support disk 10 and the circumferential limiting ring 20 together define a mounting groove for mounting the wafer. When the wafer is fixed, it is mounted in the mounting groove. After the wafer is mounted in the mounting groove, it can contact and limit the wafer against the inner wall of the circumferential limiting ring 20, ensuring that the wafer's position is stable and does not wobble during the etching process.

[0025] Along the first direction, the end of the mounting slot away from the support plate 10 is open to form a pick-and-place port. It should be noted that the upper end of the mounting slot is open to form a pick-and-place port. The wafer is placed into the mounting slot through the pick-and-place port, and the wafer can also be taken out of the mounting slot through the pick-and-place port.

[0026] Along the first direction, the axial limiting body 30 is located on the side of the circumferential limiting ring 20 away from the support plate 10. When the first direction is vertical, the axial limiting body 30 is located above the circumferential limiting ring 20, and the axial limiting body 30 contacts the end face of the circumferential limiting ring 20 away from the support plate 10. The axial limiting body 30 covers part of the structure of the pick-and-place port. When the wafer is mounted in the mounting slot, the axial limiting body 30 contacts and limits the wafer in the mounting slot. The axial limiting body 30 contacts the end face of the wafer away from the support plate 10, and the support plate 10 and the end face of the wafer facing the support plate 10 are in contact. This reduces the risk of the wafer moving along the first direction, thereby reducing the risk of the wafer shifting along the first direction, and thus reliably fixing the wafer in the mounting slot.

[0027] Therefore, the wafer fixing device of this application can fix the wafer in the mounting slot. Compared with the prior art, it does not require the use of vacuum grease to fix the wafer. Under vacuum and high temperature conditions, no oily volatiles of vacuum grease will be generated in the cavity of the ion etching equipment, effectively preventing the oily volatiles in the vacuum grease from affecting the wafer surface etching process. In addition, it avoids organic particles generated by the friction between the vacuum grease and the ion etching equipment from obscuring the etched area on the wafer surface, reducing the risk of short circuit. At the same time, it avoids the reaction between the vacuum grease and some etching gases to generate polymers that are deposited inside the cavity of the ion etching equipment and on the wafer surface, reducing the risk of contamination of the cavity of the ion etching equipment and the wafer. It achieves the effect of fixing the wafer without pollution, particles, or oil volatiles, and provides a high-purity processing cavity for wafer ion etching.

[0028] In some examples of this utility model, the support disk 10 is constructed as a heat-conducting structure.

[0029] The support disk 10 can be a metal part. After the wafer is fixed in the mounting groove, the support disk 10 and the wafer are closely attached. The heat generated during the wafer etching process can be conducted to the support disk 10, so that the heat can be dissipated through the support disk 10, thereby maintaining the temperature of the wafer surface at a suitable temperature.

[0030] In some examples of this utility model, the support disk 10 is a graphite support disk 10. The graphite support disk 10 has good thermal conductivity and high thermal conductivity. After the graphite support disk 10 comes into contact with the wafer, it facilitates the rapid transfer of heat from the wafer to the support disk 10, thereby improving the heat dissipation efficiency of the wafer and enabling the heat to dissipate quickly through the support disk 10.

[0031] In some examples of this utility model, such as Figure 1 As shown, the circumferential limiting ring 20 is a circular ring structure. The inner wall of the circumferential limiting ring 20 includes a first arc-shaped wall 21 and a first planar wall 22. Along the circumference of the circumferential limiting ring 20, the first planar wall 22 is connected between the two ends of the first arc-shaped wall 21.

[0032] The circumferential limiting ring 20 can be configured as a circular ring structure. The inner sidewall of the circumferential limiting ring 20 includes a first arc-shaped wall 21 and a first planar wall 22. Both the first arc-shaped wall 21 and the first planar wall 22 extend circumferentially along the circumferential direction of the circumferential limiting ring 20. Along the circumferential direction of the circumferential limiting ring 20, the first planar wall 22 connects between the two ends of the first arc-shaped wall 21. After the wafer is installed in the mounting groove, both the first arc-shaped wall 21 and the first planar wall 22 are in contact with the sidewall of the wafer. Both the first arc-shaped wall 21 and the first planar wall 22 can limit the wafer, thereby limiting the wafer throughout its circumference. This further ensures that the wafer is stable and does not wobble during the etching process, thus making the wafer more reliably fixed to the wafer fixing device.

[0033] In some examples of this utility model, such as Figure 3 As shown, the axial limiting body 30 is a ring structure. The axial limiting body 30 extends circumferentially along the circumferential limiting ring 20. Part of the axial limiting body 30 is opposite to and in contact with the end face of the circumferential limiting ring 20 away from the support plate 10. The other part of the axial limiting body 30 is opposite to the pick-up and put-out port to cover the part of the pick-up and put-out port.

[0034] The axial limiting body 30 is a ring structure, which can be a circular ring structure. The axial limiting body 30 extends circumferentially along the circumferential limiting ring 20. Part of the structure of the axial limiting body 30 is arranged opposite to the end face of the circumferential limiting ring 20 away from the support plate 10 in the first direction and contacts the end face of the circumferential limiting ring 20 away from the support plate 10. This arrangement enables the axial limiting body 30 and the circumferential limiting ring 20 to contact and limit each other, reducing the risk of the axial limiting body 30 moving towards the support plate 10, thereby improving the positional stability of the axial limiting body 30, the support plate 10 and the circumferential limiting ring 20.

[0035] Another part of the axial limiting body 30 is opposite to the pick-and-place port along the first direction, which can cover part of the pick-and-place port. After the wafer is installed in the mounting slot, this arrangement can make the axial limiting body 30 and the wafer opposite to each other along the first direction. The axial limiting body 30 can contact and limit the wafer away from the support plate 10, thereby effectively reducing the risk of the wafer moving along the first direction and also reducing the risk of the wafer being removed from the mounting slot from the pick-and-place port.

[0036] In some examples of this utility model, such as Figure 3 As shown, the axial limiting body 30 is a ring structure. The inner wall of the axial limiting body 30 includes a second arc-shaped wall 31 and a second planar wall 32. Along the circumference of the axial limiting body 30, the second planar wall 32 is connected between the two ends of the second arc-shaped wall 31.

[0037] The axial limiting body 30 is a ring structure. The inner wall of the axial limiting body 30 includes a second arc-shaped wall 31 and a second planar wall 32. Both the second arc-shaped wall 31 and the second planar wall 32 extend circumferentially along the axial limiting body 30. Along the circumferential direction of the axial limiting body 30, the second planar wall 32 is connected between the two ends of the second arc-shaped wall 31. After the wafer is installed in the mounting groove, the axial limiting body 30 is installed on the side of the circumferential limiting ring 20 away from the support plate 10. At least a portion of the axial limiting body 30 and the second planar wall 32 are opposite to the pick-and-place port along the first direction, thereby achieving the effect of the axial limiting body 30 covering part of the pick-and-place port, thereby exposing part of the wafer and meeting the requirements for wafer etching.

[0038] In some examples of this utility model, such as Figures 1-3 As shown, the support plate 10 has a first mounting hole 11, the circumferential limiting ring 20 has a second mounting hole 23, and the axial limiting body 30 has a third mounting hole 33. The first mounting hole 11, the second mounting hole 23, and the third mounting hole 33 are opposite each other along the first direction. Fasteners are inserted through the first mounting hole 11, the second mounting hole 23, and the third mounting hole 33 to fix the wafer fixing device to the ion etching equipment.

[0039] The support plate 10 has a first mounting hole 11 that penetrates the support plate 10 along a first direction. The circumferential limiting ring 20 has a second mounting hole 23 that penetrates the circumferential limiting ring 20 along the first direction. The axial limiting body 30 has a third mounting hole 33 that penetrates the axial limiting body 30 along the first direction. The first mounting hole 11, the second mounting hole 23, and the third mounting hole 33 are arranged opposite to each other along the first direction. The first mounting hole 11, the second mounting hole 23, and the third mounting hole 33 can all be circular holes. The diameters of the first mounting hole 11, the second mounting hole 23, and the third mounting hole 33 can be the same. For example, the diameters of the first mounting hole 11, the second mounting hole 23, and the third mounting hole 33 can all be values ​​such as 4mm, 5mm, and 6mm. The diameters of the first mounting hole 11, the second mounting hole 23, and the third mounting hole 33 can be reasonably selected and set according to the actual situation. The fastener can be a bolt. The fastener is sequentially inserted through the third mounting hole 33, the second mounting hole 23 and the first mounting hole 11 and then assembled into the fixing hole of the stage, so that the wafer fixing device can be fixed to the ion etching equipment.

[0040] In some examples of this utility model, such as Figures 1-3 As shown, there are multiple first mounting holes 11, multiple second mounting holes 23 and multiple third mounting holes 33, and each of the multiple first mounting holes 11, multiple second mounting holes 23 and multiple third mounting holes 33 corresponds to the other.

[0041] Among them, such as Figure 1 As shown, the support disk 10 has a plurality of first mounting holes 11. In other words, the support disk 10 has at least two first mounting holes 11. The number of first mounting holes 11 can be two, three, four, five, six, etc. The plurality of first mounting holes 11 are arranged alternately along the circumference of the support disk 10, and the plurality of first mounting holes 11 are evenly distributed along the circumference of the support disk 10. Figure 2As shown, the circumferential limiting ring 20 has multiple second mounting holes 23. In other words, the circumferential limiting ring 20 has at least two second mounting holes 23. The number of second mounting holes 23 can be two, three, four, five, six, etc. The multiple second mounting holes 23 are arranged alternately along the circumference of the circumferential limiting ring 20, and the multiple second mounting holes 23 are evenly distributed along the circumference of the circumferential limiting ring 20. Figure 3 As shown, the axial limiting body 30 has a plurality of third mounting holes 33. In other words, the axial limiting body 30 has at least two third mounting holes 33. The number of third mounting holes 33 can be two, three, four, five, six, etc. The plurality of third mounting holes 33 are arranged sequentially at intervals along the circumference of the axial limiting body 30, and the plurality of third mounting holes 33 are evenly arranged along the circumference of the axial limiting body 30.

[0042] This application uses an example where there are six first mounting holes 11, six second mounting holes 23, and six third mounting holes 33. By setting multiple first mounting holes 11, multiple second mounting holes 23, and multiple third mounting holes 33 in a one-to-one correspondence, multiple fasteners can be used to fix the wafer fixing device to the stage of the ion etching equipment at the same time. This can reliably fix the wafer fixing device to the stage, thereby making the wafer fixing device stable and reducing the risk of the wafer moving during the etching process.

[0043] In some examples of this utility model, such as Figure 1 As shown, the surface of the support disk 10 facing the circumferential limiting ring 20 is the support plane 12. Specifically, along the first direction, the surface of the support disk 10 facing the circumferential limiting ring 20 forms the support plane 12 structure. After the wafer is fixed in the mounting slot, the support disk 10 and the wafer can make surface-to-surface contact, which increases the contact area between the support disk 10 and the wafer. This allows more heat from the wafer to be conducted to the support disk 10 per unit time, further improving the wafer's heat dissipation efficiency and enabling the heat to be dissipated quickly through the support disk 10.

[0044] In some examples of this utility model, the support plate 10 has a disc-shaped structure and the diameter of the support plate 10 can be 190mm. During operation, the support plate 10 should first be placed on the platform and the first mounting hole 11 on the support plate 10 should be aligned with the fixing hole (threaded hole) on the platform.

[0045] The outer diameter of the circumferential limiting ring 20 can be 186 mm, and the inner diameter of the circumferential limiting ring 20 corresponding to the position of the first arc-shaped wall 21 can be 150 mm. Along the radial direction of the circumferential limiting ring 20, the shortest interval between the first planar wall 22 and the centerline axis of the circumferential limiting ring 20 is 71 mm. Multiple second mounting holes 23 on the circumferential limiting ring 20 are located on the same circle. The diameter of the circle containing the center of the second mounting hole 23 can be 176 mm, and the distance from the center of the second mounting hole 23 to the centerline axis of the circumferential limiting ring 20 is 88 mm. When installing the circumferential limiting ring 20, the second mounting holes 23 on the circumferential limiting ring 20 must first be aligned with the first mounting holes 11 on the support plate 10, and then the 6-inch wafer is placed in the mounting slot.

[0046] The axial limiting body 30 is a circular ring structure. The outer diameter of the axial limiting body 30 can be 186 mm, and the inner diameter of the axial limiting body 30 corresponding to the second arc-shaped wall 31 can be 147 mm. Along the radial direction of the axial limiting body 30, the shortest interval between the second planar wall 32 and the centerline of the axial limiting body 30 is 66.5 mm. Multiple third mounting holes 33 on the axial limiting body 30 are located on the same circle. The diameter of the circle containing the center of the third mounting hole 33 can be 176 mm, and the distance from the center of the third mounting hole 33 to the centerline of the axial limiting body 30 is 88 mm. When using the axial limiting body 30, after the support plate 10 and the circumferential limiting ring 20 are positioned and the wafer is centered in the mounting slot, the third mounting holes 33 on the axial limiting body 30 and the second mounting holes 23 on the circumferential limiting ring 20 are aligned. After all positioning is completed, the wafer fixing device is fixed to the stage using stainless steel bolts.

[0047] The support plate 10, axial limiting body 30 and circumferential limiting ring 20 work together to meet the fixation requirements of 6-inch wafers on the stage of the ion etching equipment.

[0048] As an example, when using conventional vacuum grease to fix the wafer, the etching conditions are: argon flow rate of 12 sccm, ion etching machine energy of 550 eV, rotation speed of 9 rpm, beam current of 160 mA, etching angle of 90°, and etching time of 900 s. The etching stage of the ion etching equipment operates at 5°C, and the wafer removal temperature after etching is 15°C. Multi-point film thickness testing shows that the etching uniformity range is approximately 4.53%.

[0049] When using the wafer fixing device of this application to fix the wafer, the etching conditions are as follows: argon flow rate of 12 sccm, ion etching machine energy of 550 eV, rotation speed of 9 rpm, beam current of 160 mA, etching angle of 90°, and etching time of 900 s. The stage etching operating temperature is 5°C, and the wafer removal temperature after etching is 15°C. Multi-point film thickness testing shows that the etching uniformity range is approximately 3.52%. Compared with existing technologies, using the wafer fixing device of this application to fix the wafer results in better overall etching uniformity under the same etching process, and simultaneously avoids contamination of the wafer and the etching machine cavity by vacuum grease.

[0050] It should be noted that by fixing the wafer using the wafer fixing device of this application, better etching uniformity is achieved during the etching process. The wafer fixing device of this application adopts a mechanical structure design, which avoids the defects of traditional vacuum grease fixing that will cause contamination to the wafer and the processing chamber of the ion etching machine. In addition, the absence of traditional vacuum grease reduces processing costs. The wafer fixing device of this application has significant advantages such as simple operation, efficient heat dissipation, and no wafer contamination, ensuring and meeting the core requirements of subsequent ion etching processes for the wafer fixing state.

[0051] The ion etching equipment according to an embodiment of the present invention includes the wafer fixing device for the ion etching equipment described in the above embodiment. It can fix the wafer in the mounting groove. Compared with the prior art, it eliminates the need for vacuum grease to fix the wafer. Under vacuum and high-temperature conditions, the oil from the vacuum grease will not evaporate into the processing chamber of the ion etching equipment, effectively preventing the volatile substances from the vacuum grease from affecting the wafer surface etching process. Furthermore, it avoids organic particles generated by friction between the vacuum grease and the ion etching equipment from obscuring the etched area on the wafer surface, reducing the risk of short circuits. Simultaneously, it prevents the reaction of the vacuum grease with some etching gases to generate polymers that deposit inside the processing chamber of the ion etching equipment and on the wafer surface, reducing the risk of contamination to the processing chamber and the wafer. This achieves a contamination-free, particle-free, and oil-free wafer fixing effect, thereby improving the working performance of the ion etching equipment.

[0052] Other components and operations of the ion etching apparatus according to embodiments of the present invention are known to those skilled in the art and will not be described in detail here.

[0053] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0054] Although embodiments of the present invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A wafer fixing device for an ion etching apparatus, characterized in that, include: The support disk and the circumferential limiting ring are arranged and in contact along a first direction. The support disk and the circumferential limiting ring together define a mounting groove for mounting a wafer. Along the first direction, the end of the mounting groove opposite to the support disk is open to form a pick-and-place opening. An axial limiting body is located on the side of the circumferential limiting ring away from the support plate and contacts the end face of the circumferential limiting ring away from the support plate. The axial limiting body covers the portion of the pick-and-place port and is adapted to contact and limit the wafer in the mounting groove.

2. The wafer fixing device for ion etching equipment according to claim 1, characterized in that, The support plate is constructed with a heat-conducting structure.

3. The wafer fixing device for ion etching equipment according to claim 2, characterized in that, The support plate is a graphite support plate.

4. The wafer fixing device for an ion etching apparatus according to claim 1, characterized in that, The circumferential limiting ring is a circular ring structure. The inner wall of the circumferential limiting ring includes a first arc-shaped wall and a first planar wall. Along the circumference of the circumferential limiting ring, the first planar wall is connected between the two ends of the first arc-shaped wall.

5. The wafer fixing device for an ion etching apparatus according to claim 1, characterized in that, The axial limiting body is a ring structure. The axial limiting body extends circumferentially along the circumferential limiting ring. A portion of the axial limiting body is opposite to and in contact with the end face of the circumferential limiting ring away from the support plate. Another portion of the axial limiting body is opposite to the pick-up and put-out port to cover the portion of the pick-up and put-out port.

6. The wafer fixing device for an ion etching apparatus according to claim 5, characterized in that, The axial limiting body is a ring structure. The inner wall of the axial limiting body includes a second arc-shaped wall and a second planar wall. Along the circumference of the axial limiting body, the second planar wall is connected between the two ends of the second arc-shaped wall.

7. The wafer fixing device for an ion etching apparatus according to claim 1, characterized in that, The support plate has a first mounting hole, the circumferential limiting ring has a second mounting hole, and the axial limiting body has a third mounting hole. The first mounting hole, the second mounting hole, and the third mounting hole are opposite each other along the first direction. Fasteners are inserted through the first mounting hole, the second mounting hole, and the third mounting hole to fix the wafer fixing device to the ion etching equipment.

8. The wafer fixing device for an ion etching apparatus according to claim 7, characterized in that, There are multiple first mounting holes, multiple second mounting holes, and multiple third mounting holes, and each of the multiple first mounting holes, multiple second mounting holes, and multiple third mounting holes corresponds to one another.

9. The wafer fixing device for an ion etching apparatus according to any one of claims 1-8, characterized in that, The surface of the support plate facing the circumferential limiting ring is a support plane.

10. An ion etching apparatus, characterized in that, Includes a wafer fixing device for an ion etching apparatus according to any one of claims 1-9.

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