A smart power module and a chip

Abstract

This utility model provides an intelligent power module and a chip. The intelligent power module includes an inverter module and a power factor correction module (PFC module). In the inverter module, the control terminals of the first and second reverse-conducting insulated gate devices are respectively connected to the first and second integrated circuits, realizing short-path, low-latency transmission of drive signals and improving the accuracy and reliability of switching actions. The PFC module provides a more stable and higher-voltage DC bus for the inverter module, enabling the inverter module to operate in a more optimal voltage range. Key components of the inverter module and the PFC module are directly connected, reducing external wiring and helping to reduce electromagnetic interference. Integrating the inverter module and the PFC module in the same package reduces the number of external connections and discrete components, significantly improving the system integration. Simultaneously, the integrated design facilitates unified heat dissipation layout and thermal management, avoiding localized overheating and thus extending device lifespan.

Description

Technical Field

[0001] This utility model relates to the field of integrated circuit technology, and in particular to an intelligent power module and a chip. Background Technology

[0002] With the development of electronic technology, system design is gradually becoming more highly integrated. While discrete components offer flexibility, they require a large number of components and complex wiring in complex systems, increasing design and manufacturing complexity. Intelligent power modules integrate power devices, control circuits, and protection functions into a single package, simplifying design and reducing system size. Advances in packaging technology, such as multilayer packaging, system-in-package (SiP), and 3D integration, have made it possible to integrate multiple functions or circuits into a single module, thus driving the development of intelligent power modules.

[0003] Modern electronic systems face increasingly stringent energy efficiency requirements, particularly in power management, motor control, and new energy fields. Intelligent power modules, through optimized design and integrated control circuitry, can reduce power losses and improve system efficiency. With the increasing portability and compactness of consumer electronics, industrial equipment, and automotive electronics, the size requirements for system components are becoming increasingly stringent. Integrated design can significantly reduce the physical size of systems, meeting miniaturization demands.

[0004] However, the existing packaging schemes for PFC (Power Factor Correction) devices and inverter modules still result in a relatively large overall system size, which is not conducive to the integration of circuit boards for limited applications. In addition, the system heat is relatively dispersed and cannot be effectively concentrated for heat conduction, which affects the stability of the system. Utility Model Content

[0005] To address the aforementioned problems, this utility model discloses an intelligent power module and a chip.

[0006] In a first aspect, embodiments of the present invention provide an intelligent power module, comprising:

[0007] The inverter module includes a first reverse-conducting insulated gate device, a second reverse-conducting insulated gate device, a first integrated circuit, and a second integrated circuit; the control terminal of the first reverse-conducting insulated gate device is connected to the first integrated circuit, the control terminal of the second reverse-conducting insulated gate device is connected to the second integrated circuit, and the input terminal of the second reverse-conducting insulated gate device is connected to the first integrated circuit.

[0008] A power factor correction module includes a first forward-conducting insulated-gate device, a second forward-conducting insulated-gate device, and a power factor correction integrated circuit; the control terminals of the first and second forward-conducting insulated-gate devices are connected to the power factor correction integrated circuit; the input terminal of the first forward-conducting insulated-gate device is connected to the input terminal of the first reverse-conducting insulated-gate device, and the output terminal of the first forward-conducting insulated-gate device is connected to the input terminal of the second forward-conducting insulated-gate device.

[0009] Optionally, the inverter module further includes a bootstrap driver integrated device and a fast recovery device;

[0010] The bootstrap driver integrated device is connected to the first integrated circuit;

[0011] The fast recovery device is connected to the power factor correction integrated circuit.

[0012] Optionally, the inverter module includes three first reverse-conducting insulated-gate devices, three second reverse-conducting insulated-gate devices, three bootstrap driver integrated devices, a first integrated circuit, and a second integrated circuit; wherein the control terminals of the three first reverse-conducting insulated-gate devices are connected to the first integrated circuit, the control terminals of the three second reverse-conducting insulated-gate devices are connected to the second integrated circuit, and the three bootstrap driver integrated devices are respectively connected to the first integrated circuit;

[0013] The three first reverse-conducting insulated gate devices form the inverter upper bridge, and the three second reverse-conducting insulated gate devices form the inverter lower bridge; each bridge arm is divided into three phases, wherein the input terminal of each phase of the inverter upper bridge shares the same pin, and the input terminal of each phase of the inverter lower bridge is multiplexed with the output port of each phase of the inverter upper bridge.

[0014] Optionally, the power factor correction module includes a first forward-conducting insulated-gate device, a second forward-conducting insulated-gate device, two fast recovery devices, and a power factor correction integrated circuit; the control terminals of the first forward-conducting insulated-gate device and the second forward-conducting insulated-gate device are connected to the power factor correction integrated circuit; the two fast recovery devices are connected to the power factor correction integrated circuit.

[0015] The first forward-conducting insulated gate device and a fast recovery device form a power factor correction upper bridge, and the second forward-conducting insulated gate device and a fast recovery device form a power factor correction lower bridge.

[0016] Optionally, the intelligent power module further includes:

[0017] A substrate for carrying the first forward-conducting insulating gate device, the second forward-conducting insulating gate device, the first reverse-conducting insulating gate device, the second reverse-conducting insulating gate device, and the fast recovery device.

[0018] Optionally, the intelligent power module further includes:

[0019] A frame for carrying the power factor correction integrated circuit, the first integrated circuit, the second integrated circuit, and the bootstrap driver integrated device.

[0020] Optionally, the intelligent power module further includes:

[0021] Bonding wires are used to connect the first reverse-conducting insulated gate device, the second reverse-conducting insulated gate device, the fast recovery device, the first forward-conducting insulated gate device, the second forward-conducting insulated gate device, the power factor correction integrated circuit, the first integrated circuit, the second integrated circuit, and the bootstrap driver integrated device.

[0022] Optionally, the substrate includes a first substrate surface and a second substrate surface;

[0023] The first substrate surface includes a plurality of base islands, each base island being spaced apart, and the plurality of base islands being respectively used to support the first forward-conducting insulating gate device, the second forward-conducting insulating gate device, the first reverse-conducting insulating gate device, the second reverse-conducting insulating gate device, and the fast recovery device;

[0024] The second substrate surface is used for heat dissipation.

[0025] Optionally, the frame includes a first frame and a second frame;

[0026] The first frame is welded to the substrate;

[0027] The second frame is used to carry the power factor correction integrated circuit, the first integrated circuit, the second integrated circuit and the bootstrap driver integrated device.

[0028] Optionally, the bonding wire includes a first bonding wire and a second bonding wire;

[0029] The first bonding wire is used to connect the output terminals of the first reverse-conducting insulated gate device, the second reverse-conducting insulated gate device, the fast recovery device, the first forward-conducting insulated gate device, and the second forward-conducting insulated gate device.

[0030] The second bonding wire is used to connect the power factor correction integrated circuit, the first integrated circuit, the second integrated circuit, and the bootstrap driver integrated device to the pins of the second frame.

[0031] Optionally, the plurality of base islands includes a first base island, a second base island, and a third base island;

[0032] The first base island is used to carry the first forward-conducting insulating gate device, the second forward-conducting insulating gate device, and the fast recovery device;

[0033] The second base island is connected to both the first base island and the power factor correction integrated circuit.

[0034] The third base island is used to carry the first reverse-conducting insulating gate device and the second reverse-conducting insulating gate device.

[0035] Optionally, the intelligent power module further includes:

[0036] A molding compound is used to enclose the intelligent power module in its external shape.

[0037] Secondly, this utility model embodiment provides a chip including the aforementioned intelligent power module.

[0038] The embodiments of this utility model have the following advantages:

[0039] The intelligent power module of this embodiment includes an inverter module and a power factor correction module (PFC module). The inverter module includes a first reverse-conducting insulated-gate device (ICG), a second reverse-conducting ICG, a first integrated circuit, and a second integrated circuit. The control terminals of the first and second reverse-conducting ICGs are respectively connected to the first and second integrated circuits, which serve as drive circuits, enabling short-path, low-delay transmission of drive signals and improving the accuracy and reliability of switching actions. The power factor correction module includes a first forward-conducting ICG, a second forward-conducting ICG, and a power factor correction integrated circuit. The PFC module is controlled by a dedicated PFC integrated circuit, enabling fast dynamic response and stable output. The PFC module can boost and stabilize the input voltage, providing a more stable and higher-voltage DC bus for the inverter module, allowing the inverter module to operate in a more optimal voltage range, helping to reduce switching losses and conduction losses, and improving the overall system conversion efficiency. Key components of the inverter module and PFC module are directly connected, such as "the input terminal of the first forward-conducting insulated gate device is connected to the input terminal of the first reverse-conducting insulated gate device," reducing external traces, helping to suppress voltage spikes, reduce electromagnetic interference, and improve system reliability and safety. Integrating the inverter module and PFC module into the same package reduces the number of external connections and discrete components, significantly improving chip integration and facilitating chip miniaturization and weight reduction. Simultaneously, integrated design allows for unified heat dissipation layout and thermal management, avoiding localized overheating and extending device lifespan. Attached Figure Description

[0040] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0041] Figure 1 This is a structural block diagram of an intelligent power module according to an embodiment of the present utility model;

[0042] Figure 2 This is a structural block diagram of another intelligent power module according to an embodiment of the present utility model;

[0043] Figure 3 This is a structural block diagram of another intelligent power module according to an embodiment of the present utility model;

[0044] Figure 4 This is a structural block diagram of a substrate for an intelligent power module according to an embodiment of the present invention;

[0045] Figure 5 This is a schematic diagram of the external appearance of an intelligent power module according to an embodiment of the present utility model.

[0046] Explanation of reference numerals in the attached figures:

[0047] Inverter module 01, power factor correction module 02, substrate 03, frame 04, bonding wire 05, molding compound 06, first reverse-conducting insulated gate device RC-IGBT1, second reverse-conducting insulated gate device RC-IGBT2, first integrated circuit HVIC, second integrated circuit LVIC, first forward-conducting insulated gate device IGBT1, second forward-conducting insulated gate device IGBT2, power factor correction integrated circuit PFC-IC, bootstrap driver integrated device BDI, fast recovery device Si / SiC-FRD, first substrate surface M1, second substrate surface M2, first base island D1, second base island D2, third base island D3. Detailed Implementation

[0048] This invention proposes an intelligent power module aimed at improving chip integration and preventing localized overheating. To achieve this goal, the embodiment of this invention integrates the inverter module and the PFC module within the same package, reducing the number of external connections and discrete components, significantly improving chip integration, and facilitating chip miniaturization and weight reduction. Simultaneously, the integrated design allows for unified heat dissipation layout and thermal management, preventing localized overheating and extending device lifespan.

[0049] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, the utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0050] The full names and translations of the English abbreviations of each device in this embodiment are as follows:

[0051] IGBT, Insulated Gate Bipolar Transistor, is a forward-conducting insulated gate bipolar transistor.

[0052] RC-IGBT, Reverse-Conducting IGBT, is a reverse-conducting insulated-gate bipolar transistor.

[0053] Si / SiC-FRD, Silicon / Silicon Carbide Fast Recovery Diode;

[0054] BDI, Bootstrap Driver IC;

[0055] HVIC, High Voltage Integrated Circuit;

[0056] LVIC, Low Voltage Integrated Circuit;

[0057] PFC-IC, Power Factor Correction Integrated Circuit.

[0058] Reference Figure 1 The diagram shows a structural block diagram of an intelligent power module according to an embodiment of the present invention. The intelligent power module includes:

[0059] Inverter module 01 includes a first reverse-conducting insulated-gate device RC-IGBT1, a second reverse-conducting insulated-gate device RC-IGBT2, a first integrated circuit HVIC, and a second integrated circuit LVIC; the control terminal of the first reverse-conducting insulated-gate device RC-IGBT1 is connected to the first integrated circuit HVIC, the control terminal of the second reverse-conducting insulated-gate device RC-IGBT2 is connected to the second integrated circuit LVIC, and the input terminal of the second reverse-conducting insulated-gate device RC-IGBT2 is connected to the first integrated circuit HVIC;

[0060] The power factor correction module 02 includes a first forward-conducting insulated-gate device (IGBT1), a second forward-conducting insulated-gate device (IGBT2), and a power factor correction integrated circuit (PFC-IC). The control terminals of the first forward-conducting IGBT1 and the second forward-conducting IGBT2 are connected to the PFC-IC. The input terminal of the first forward-conducting IGBT1 is connected to the input terminal of the first reverse-conducting insulated-gate device (RC-IGBT1), and the output terminal of the first forward-conducting IGBT1 is connected to the input terminal of the second forward-conducting IGBT2.

[0061] In this embodiment of the invention, the intelligent power module integrates an inverter module and a PFC module. Compared to solutions using discrete components built on a PCB board, the integrated module saves a significant amount of space, making it ideal for applications with strict size requirements. Internally, the module can be connected via a ceramic substrate, reducing the large number of external leads and PCB traces required in traditional solutions, resulting in a more compact end-product design. The inductance of the internal interconnect leads is far lower than that of the external wiring. This low inductance effectively suppresses voltage overshoot and ringing during switching, reducing stress on the components and thus lowering the risk of damage and improving reliability.

[0062] The first integrated circuit, the second integrated circuit, and the PFC integrated circuit can be drivers, and also integrate protection functions, such as preventing devices from burning out due to incomplete conduction when the power supply voltage is insufficient, quickly shutting down devices in case of abnormalities, monitoring the core temperature of the module, and alarming or shutting down when the temperature exceeds the limit. Because the protection circuit is tightly integrated with the power device, the detection and response speed is faster than that of external circuits, and it can more effectively protect the core device.

[0063] The reverse-conducting insulated-gate device (RC-IGBT) integrates the IGBT and anti-parallel diode onto the same silicon chip. This eliminates the bonding wires and associated resistances between the diode and IGBT in traditional IGBT modules, reducing overall saturation voltage drop and conduction losses, and improving the efficiency of the inverter section. The PFC module uses a forward-conducting insulated-gate device (IGBT) in conjunction with a dedicated PFC-IC, enabling efficient and high power factor correction and reducing harmonic pollution to the power grid. Simultaneously, the input terminals of the first forward-conducting IGBT and the first reverse-conducting IGBT are connected, meaning the PFC bus capacitor directly powers the inverter bridge with a very short path, reducing energy loss due to intermediate connection impedance.

[0064] The intelligent power module of this embodiment includes an inverter module and a power factor correction module (PFC module). The inverter module includes a first reverse-conducting insulated-gate device (ICG), a second reverse-conducting ICG, a first integrated circuit, and a second integrated circuit. The control terminals of the first and second reverse-conducting ICGs are respectively connected to the first and second integrated circuits, which serve as drive circuits, enabling short-path, low-delay transmission of drive signals and improving the accuracy and reliability of switching actions. The power factor correction module includes a first forward-conducting ICG, a second forward-conducting ICG, and a power factor correction integrated circuit. The PFC module is controlled by a dedicated PFC integrated circuit, enabling fast dynamic response and stable output. The PFC module can boost and stabilize the input voltage, providing a more stable and higher-voltage DC bus for the inverter module, allowing the inverter module to operate in a more optimal voltage range, helping to reduce switching losses and conduction losses, and improving the overall system conversion efficiency. Key components of the inverter module and PFC module are directly connected, such as "the input terminal of the first forward-conducting insulated gate device is connected to the input terminal of the first reverse-conducting insulated gate device," reducing external traces, helping to suppress voltage spikes, reduce electromagnetic interference, and improve system reliability and safety. Integrating the inverter module and PFC module into the same package reduces the number of external connections and discrete components, significantly improving chip integration and facilitating chip miniaturization and weight reduction. Simultaneously, integrated design allows for unified heat dissipation layout and thermal management, avoiding localized overheating and extending device lifespan.

[0065] Reference Figure 2 The diagram shows a structural block diagram of another intelligent power module according to an embodiment of the present invention. The inverter module 01 further includes a bootstrap drive integrated device BDI and a fast recovery device Si / SiC-FRD (not shown in the figure).

[0066] The bootstrap driver integrated device (BDI) is connected to the first integrated circuit (HVIC).

[0067] The fast recovery device Si / SiC-FRD is connected to the power factor correction integrated circuit PFC-IC.

[0068] In this embodiment of the invention, the bootstrap driver integrated device integrates the entire bootstrap circuit inside the module, eliminating the need to design, lay out, and solder these discrete components on an external PCB board. Furthermore, the path between the integrated bootstrap device and the first integrated circuit and power devices is extremely short, resulting in superior performance compared to external connection schemes. The performance of the bootstrap circuit affects the reliable conduction of high-voltage side devices; improper parameter selection or poor layout of discrete component bootstrap circuits can lead to insufficient drive voltage, noise interference, and other problems. The internally connected bootstrap driver integrated device in this embodiment of the invention minimizes parasitic inductance and noise coupling, making the bootstrap charging process more stable and reducing the risk of accidental turn-on or turn-off due to voltage fluctuations.

[0069] Fast recovery devices (FCDs) have extremely short reverse recovery times and very small reverse recovery charges, thus reducing the significant switching losses generated by diodes during reverse recovery. This substantial reduction in switching losses allows PFC circuits to operate at higher switching frequencies. Higher frequencies mean the use of smaller inductors and filter capacitors, further reducing system size and cost.

[0070] In one embodiment, such as Figure 2 As shown, the inverter module 01 includes three first reverse-conducting insulated-gate devices RC-IGBT1, three second reverse-conducting insulated-gate devices RC-IGBT2, three bootstrap driver integrated devices BDI, one first integrated circuit HVIC, and one second integrated circuit LVIC; wherein, the control terminals of the three first reverse-conducting insulated-gate devices RC-IGBT1 are connected to the first integrated circuit HVIC, the control terminals of the three second reverse-conducting insulated-gate devices RC-IGBT2 are connected to the second integrated circuit LVIC, and the three bootstrap driver integrated devices BDI are respectively connected to the first integrated circuit HVIC;

[0071] The three first reverse-conducting insulated gate devices RC-IGBT1 form the inverter upper bridge, and the three second reverse-conducting insulated gate devices RC-IGBT2 form the inverter lower bridge; each bridge arm is divided into three phases, wherein the input terminal of each phase of the inverter upper bridge shares the same pin, and the input terminal of each phase of the inverter lower bridge is multiplexed with the output port of each phase of the inverter upper bridge.

[0072] In this embodiment of the invention, the inverter module integrates six power switches (three upper-arm RC-IGBTs and three lower-arm RC-IGBTs) and their corresponding three bootstrap drive units required to form a three-phase inverter bridge. Integrating six high-current power switches and their drive protection circuits into a compact package significantly reduces the footprint of six discrete components on a PCB, meeting the stringent requirements of ultra-thin, small-volume end products. The collectors of the three upper-bridge devices share a single high-voltage input pin (P), and the emitters of the three lower-bridge devices are directly connected and multiplexed to the three-phase output pins (U / V / W), greatly reducing the number of external pins on the module. Fewer pins mean a smaller package size and lower packaging cost. Pin multiplexing allows for high-current parallel connection of internal copper layers, while the parasitic inductance of the internal interconnects is much lower than that of external leads. This low inductance effectively suppresses voltage overshoot and ringing, thereby improving system reliability and efficiency.

[0073] Three bootstrap drive integrated devices are connected to the first integrated circuit, so that each phase upper bridge arm has its own independent bootstrap drive unit. The drive parameters of each phase are highly consistent, ensuring the symmetry and quality of the three-phase output voltage waveform, reducing torque ripple, and making the motor run more smoothly and with lower noise. Moreover, if an abnormality occurs in one phase, its independent bootstrap and drive circuit will not directly affect other phases, giving the inverter module better fault tolerance.

[0074] In one embodiment, such as Figure 2 As shown, the power factor correction module 02 includes a first forward-conducting insulated-gate device (IGBT1), a second forward-conducting insulated-gate device (IGBT2), two fast recovery devices (Si / SiC-FRDs), and a power factor correction integrated circuit (PFC-IC). The control terminals of the first forward-conducting IGBT1 and the second forward-conducting IGBT2 are connected to the power factor correction integrated circuit (PFC-IC). The two fast recovery devices (Si / SiC-FRDs) are connected to the power factor correction integrated circuit (PFC-IC).

[0075] The first forward-conducting insulated gate device IGBT1 and a fast recovery device Si / SiC-FRD form a power factor correction upper bridge, and the second forward-conducting insulated gate device IGBT2 and a fast recovery device Si / SiC-FRD form a power factor correction lower bridge.

[0076] In this embodiment of the invention, the PFC module includes two identical PFC upper bridge and PFC lower bridge, controlled by the same PFC integrated circuit, but with a 180-degree phase difference in their switches. When the currents from the two channels are superimposed at the input, the ripples cancel each other out, resulting in a smaller ripple amplitude and doubled frequency in the total input current. Due to the reduced ripple current and increased frequency, the required pre-stage EMI filter inductor and large capacitor can be smaller, further saving space and cost.

[0077] Each PFC bridge arm integrates a fast recovery device used in conjunction with the switching transistor (forward-conducting insulated-gate device). In the PFC boost circuit, the fast recovery device acts as a freewheeling diode, and its fast soft recovery characteristics make the switching process smoother and effectively suppress EMI.

[0078] Specifically, Figure 2 The pin numbers and their corresponding functions are as follows:

[0079]

[0080]

[0081] The inverter module's drive section is divided into an upper bridge HVIC driver and a lower bridge LVIC driver.

[0082] The inverter module's upper bridge drive design includes a three-phase drive floating voltage ground (VS), a floating voltage input (VB), and a gate signal input (HIN). It also includes a drive power supply voltage port (VCC), a common ground port (COM), and a detection port (SD). The detection port can be used for module switch status detection, fault signal feedback, and providing signals to ensure the module is safely disconnected. The input and output of the above signals are transmitted by bonding gold or copper wires. Finally, the drive signal is connected to the gate of the upper bridge RC-IGBT.

[0083] The inverter module's lower bridge driver design has a three-phase gate signal input port (LIN), a common ground port (COM), and a drive power supply voltage port that are led out through the upper bridge driver section. It does not have a separate pin port (VCC), fault output function (FO), overcurrent protection function (CIN), or temperature output function (VOT). Similarly, the drive signals are connected to the gate of the lower bridge's RC-IGBT chip, and the above functions or port definitions are achieved by wire bonding.

[0084] The power input port of the PFC module's upper bridge is shared with the inverter upper bridge input (P), and the output is led out through aluminum wire bonding and has an independent pin port.

[0085] The power signal input terminal (L) of the lower bridge of the PFC module shares a pin port with the output of the upper bridge PFC. The input port is implemented by bonding wires between the frame and the ceramic substrate, and the output is led out by aluminum wire bonding and has an independent pin port (GND).

[0086] The PFC module's driver design includes gate signal input ports (LIN, HIN) to drive the gates of the lower and upper IGBTs respectively, and a common ground port shared with the inverter module. It does not have independently designed pin ports (COM), driver floating voltage ground (VS), floating voltage input (VB), and driver power supply voltage port (VCC). The drive signals are connected to the gates of the IGBT chips, and the above functions or port definitions are achieved through gold or copper wire bonding.

[0087] Reference Figure 3 The diagram shows a structural block diagram of another intelligent power module according to an embodiment of the present invention. The intelligent power module further includes:

[0088] Substrate 03 is used to carry the first forward-conducting insulated gate device IGBT1, the second forward-conducting insulated gate device IGBT2, the first reverse-conducting insulated gate device RC-IGBT1, the second reverse-conducting insulated gate device RC-IGBT2, and the fast recovery device Si / SiC-FRD;

[0089] Frame 04 is used to carry the power factor correction integrated circuit PFC-IC, the first integrated circuit HVIC, the second integrated circuit LVIC and the bootstrap driver integrated device BDI;

[0090] Bond wire 05 is used to connect the first reverse-conducting insulated gate device RC-IGBT1, the second reverse-conducting insulated gate device RC-IGBT2, the fast recovery device Si / SiC-FRD, the first forward-conducting insulated gate device IGBT1, the second forward-conducting insulated gate device IGBT2, the power factor correction integrated circuit PFC-IC, the first integrated circuit HVIC, the second integrated circuit LVIC, and the bootstrap driver integrated device BDI;

[0091] The molding compound 06 is used to enclose the intelligent power module in its external shape.

[0092] In this embodiment of the invention, the substrate can be a direct copper-clad ceramic substrate (such as Al2O3 or AlN). Its bottom layer is a ceramic with excellent thermal conductivity, and it is covered with copper layers on the top and bottom, thus forming a low thermal resistance heat conduction path, which can quickly conduct the heat generated by the chip to the metal heat sink at the bottom of the module, preventing the chip from overheating and being damaged.

[0093] The frame can be a leadframe, a pre-designed structure that precisely holds the integrated circuit and provides interfaces for internal circuit connections and external pins. The frame physically separates the driver / control integrated circuit from the heat-generating power chip, preventing direct heat transfer from the power chip to the temperature-sensitive control chip, thus improving the stability and lifespan of the control circuit.

[0094] Wire bonding can be made of aluminum, gold, or copper. Wire bonding technology can flexibly connect chip pads to substrate / frame circuitry.

[0095] The molding compound can be made of epoxy resin molding compound. The molding compound can completely encapsulate all the fragile chips, tiny solder wires and delicate circuit structures inside, forming a robust whole. This effectively prevents damage caused by external factors such as physical impact, vibration, dust, moisture, and chemical contamination, and greatly improves the reliability of the module in harsh industrial environments.

[0096] Reference Figure 4 The diagram shows a structural block diagram of a substrate for an intelligent power module according to an embodiment of the present invention. The substrate 03 includes a first substrate surface M1 and a second substrate surface M2.

[0097] The first substrate surface M1 includes a plurality of base islands, with a spacing between each base island. The plurality of base islands are respectively used to carry the first forward conducting insulated gate device IGBT1, the second forward conducting insulated gate device IGBT2, the first reverse conducting insulated gate device RC-IGBT1, the second reverse conducting insulated gate device RC-IGBT2, and the fast recovery device Si / SiC-FRD.

[0098] The second substrate surface M2 is used for heat dissipation.

[0099] In this embodiment of the invention, the spacing between each base island allows for physical separation of the base islands carrying different chips, effectively preventing high-voltage breakdown and arc discharge, and ensuring the long-term safe operation of the module under high voltage. Simultaneously, the physical spacing reduces the coupling area between different high-voltage units, thereby reducing their parasitic capacitance and helping to reduce common-mode noise generated during high-frequency switching.

[0100] In one embodiment, such as Figure 4 As shown, the plurality of base islands includes a first base island D1, a second base island D2, and a third base island D3;

[0101] The first base island D1 is used to carry the first forward-conducting insulated gate device IGBT1, the second forward-conducting insulated gate device IGBT2, and the fast recovery device Si / SiC-FRD;

[0102] The second base island D2 is connected to the first base island D1 and the power factor correction integrated circuit PFC-IC, respectively;

[0103] The third base island D3 is used to carry the first reverse-conducting insulated gate device RC-IGBT1 and the second reverse-conducting insulated gate device RC-IGBT2.

[0104] In this embodiment of the invention, the high-frequency switching PFC power device is placed on the first base island, and the noise-sensitive inverter power device is placed on the third base island, thus physically isolating the two and connecting them through an independent interface base island, the second base island. This effectively prevents PFC switching noise from coupling to the inverter section through the substrate, avoiding inverter false triggering or performance degradation. The independent base island design prevents the heat from the PFC device from being directly conducted to the inverter chip through the copper layer of the substrate, avoiding mutual thermal interference and allowing each unit to operate closer to its ideal temperature. The smaller independent base islands also better accommodate thermal expansion and contraction, reducing accumulated stress caused by material mismatch, preventing solder layer fatigue cracking, and extending module life.

[0105] In one embodiment, the frame 04 includes a first frame and a second frame;

[0106] The first frame is welded to the substrate 03;

[0107] The second frame is used to carry the power factor correction integrated circuit PFC-IC, the first integrated circuit HVIC, the second integrated circuit LVIC and the bootstrap driver integrated device BDI.

[0108] In this embodiment of the invention, the first frame is welded to the substrate and primarily provides mechanical support, while the second frame carries various integrated circuits and is primarily responsible for mounting control chips. The first frame can be a robust metal or high-strength plastic frame; after being welded to the substrate, it forms the mechanical skeleton of the entire module, providing the main mechanical strength. This allows the module to better resist external vibrations, impacts, and bending stresses, preventing the breakage of fragile internal solder wires. The second frame carrying the integrated circuits is physically decoupled from the substrate, which is the main heat source, through the first frame.

[0109] In one embodiment, the bonding wire 05 includes a first bonding wire and a second bonding wire;

[0110] The first bonding wire is used to connect the output terminals of the first reverse-conducting insulated gate device RC-IGBT1, the second reverse-conducting insulated gate device RC-IGBT2, the fast recovery device Si / SiC-FRD, and the first forward-conducting insulated gate device IGBT1 and the second forward-conducting insulated gate device IGBT2.

[0111] The second bonding wire is used to connect the power factor correction integrated circuit PFC-IC, the first integrated circuit HVIC, the second integrated circuit LVIC, and the bootstrap driver integrated device BDI to the pins of the second frame.

[0112] In this embodiment of the invention, the first bonding wire can be an aluminum wire, used to connect the output terminal of the power device, i.e. the path with the largest current. By using thicker or multiple aluminum wires connected in parallel, the large current demand of tens or even hundreds of amperes can be met, minimizing conduction losses and heat generation.

[0113] The second bonding wire can be a gold wire or a copper wire, used to connect the signal pins of the control integrated circuit. By using finer and more numerous gold or copper wires, complex control, protection and communication functions can be accomplished, achieving high-density and high-precision connections.

[0114] Reference Figure 5 The diagram shows the external appearance of an intelligent power module according to an embodiment of the present invention.

[0115] For example, the dimensions of the intelligent power module structure can be 51.80*19.00*3.50mm, and the overall space occupied can be 51.80*26.70*11.50mm. According to the naming principle of the package shape of the through-hole intelligent power module, the module structure of this utility model embodiment can be called a DIP34 module.

[0116] The design includes 34 pins, with 25 pins on the driver chip side. Figure 1-3 The pins are numbered 1 to 25, with a pin width of 0.50 mm and a thickness of 0.40 mm. There are 9 pins on the power chip side, corresponding to pin numbers 26 to 34, with a pin width of 0.80 mm and a thickness of 0.40 mm.

[0117] The molding compound can include a front and a back. In addition to the heat dissipation surface of the ceramic substrate, it is also designed with two medium-sized circular pin holes for positioning and fixing the frame and ceramic substrate when pouring molding compound, and at the same time, it facilitates demolding in the vertical direction of the mold.

[0118] The intelligent power module of this embodiment includes an inverter module, a PFC module, a substrate, a frame, bonding wires, and a molding compound. The integrated design of the intelligent power module reduces external connections and wiring, lowering the risk of failure due to poor soldering or wiring. Furthermore, the optimized internal design of the module improves heat dissipation and extends its service life. Utilizing a common-mode design, this embodiment integrates the inverter, PFC, and driver into a single module, incorporating various functions. The size is reduced by 10%–20% compared to discrete solutions, making it suitable for space-constrained scenarios while increasing the module's integration level. It also allows a single controller to manage the switching actions of both the PFC and inverter modules simultaneously, simplifying the control logic.

[0119] This utility model embodiment also provides a chip, including the above-described intelligent power module.

[0120] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0121] Although preferred embodiments of the present invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of the present invention.

[0122] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or terminal device that includes said element.

[0123] The present invention provides a detailed description of an intelligent power module and a chip. Specific examples have been used to illustrate the principle and implementation of the present invention. The description of the above embodiments is only for the purpose of helping to understand the method and core idea of ​​the present invention. At the same time, for those skilled in the art, there will be changes in the specific implementation and application scope based on the idea of ​​the present invention. Therefore, the content of this specification should not be construed as a limitation of the present invention.

Claims

1. A smart power module, characterized in that, include: The inverter module includes a first reverse-conducting insulated gate device, a second reverse-conducting insulated gate device, a first integrated circuit, and a second integrated circuit; the control terminal of the first reverse-conducting insulated gate device is connected to the first integrated circuit, the control terminal of the second reverse-conducting insulated gate device is connected to the second integrated circuit, and the input terminal of the second reverse-conducting insulated gate device is connected to the first integrated circuit. A power factor correction module includes a first forward-conducting insulated-gate device, a second forward-conducting insulated-gate device, and a power factor correction integrated circuit; the control terminals of the first and second forward-conducting insulated-gate devices are connected to the power factor correction integrated circuit; the input terminal of the first forward-conducting insulated-gate device is connected to the input terminal of the first reverse-conducting insulated-gate device, and the output terminal of the first forward-conducting insulated-gate device is connected to the input terminal of the second forward-conducting insulated-gate device.

2. The intelligent power module according to claim 1, characterized in that, The inverter module also includes a bootstrap driver integrated device and a fast recovery device; The bootstrap driver integrated device is connected to the first integrated circuit; The fast recovery device is connected to the power factor correction integrated circuit.

3. The intelligent power module according to claim 1, characterized in that, The inverter module includes three first reverse-conducting insulated-gate devices, three second reverse-conducting insulated-gate devices, three bootstrap driver integrated devices, a first integrated circuit, and a second integrated circuit; wherein, the control terminals of the three first reverse-conducting insulated-gate devices are connected to the first integrated circuit, the control terminals of the three second reverse-conducting insulated-gate devices are connected to the second integrated circuit, and the three bootstrap driver integrated devices are respectively connected to the first integrated circuit; The three first reverse-conducting insulated gate devices form the inverter upper bridge, and the three second reverse-conducting insulated gate devices form the inverter lower bridge; each bridge arm is divided into three phases, wherein the input terminal of each phase of the inverter upper bridge shares the same pin, and the input terminal of each phase of the inverter lower bridge is multiplexed with the output port of each phase of the inverter upper bridge.

4. The intelligent power module according to claim 1, characterized in that, The power factor correction module includes a first forward-conducting insulated-gate device, a second forward-conducting insulated-gate device, two fast recovery devices, and a power factor correction integrated circuit; the control terminals of the first forward-conducting insulated-gate device and the second forward-conducting insulated-gate device are connected to the power factor correction integrated circuit; the two fast recovery devices are connected to the power factor correction integrated circuit. The first forward-conducting insulated gate device and a fast recovery device form a power factor correction upper bridge, and the second forward-conducting insulated gate device and a fast recovery device form a power factor correction lower bridge.

5. The intelligent power module according to claim 2, characterized in that, Also includes: A substrate for carrying the first forward-conducting insulating gate device, the second forward-conducting insulating gate device, the first reverse-conducting insulating gate device, the second reverse-conducting insulating gate device, and the fast recovery device.

6. The intelligent power module according to claim 5, characterized in that, Also includes: A frame for carrying the power factor correction integrated circuit, the first integrated circuit, the second integrated circuit, and the bootstrap driver integrated device.

7. The intelligent power module according to claim 2, characterized in that, Also includes: Bonding wires are used to connect the first reverse-conducting insulated gate device, the second reverse-conducting insulated gate device, the fast recovery device, the first forward-conducting insulated gate device, the second forward-conducting insulated gate device, the power factor correction integrated circuit, the first integrated circuit, the second integrated circuit, and the bootstrap driver integrated device.

8. The intelligent power module according to claim 5, characterized in that, The substrate includes a first substrate surface and a second substrate surface; The first substrate surface includes a plurality of base islands, each base island being spaced apart, and the plurality of base islands being respectively used to support the first forward-conducting insulating gate device, the second forward-conducting insulating gate device, the first reverse-conducting insulating gate device, the second reverse-conducting insulating gate device, and the fast recovery device; The second substrate surface is used for heat dissipation.

9. The intelligent power module according to claim 6, characterized in that, The framework includes a first frame and a second frame; The first frame is welded to the substrate; The second frame is used to carry the power factor correction integrated circuit, the first integrated circuit, the second integrated circuit and the bootstrap driver integrated device.

10. The intelligent power module according to claim 7, characterized in that, The bonding wire includes a first bonding wire and a second bonding wire; The first bonding wire is used to connect the output terminals of the first reverse-conducting insulated gate device, the second reverse-conducting insulated gate device, the fast recovery device, the first forward-conducting insulated gate device, and the second forward-conducting insulated gate device. The second bonding wire is used to connect the power factor correction integrated circuit, the first integrated circuit, the second integrated circuit, and the bootstrap driver integrated device to the pins of the second frame.

11. The intelligent power module according to claim 8, characterized in that, The plurality of base islands includes a first base island, a second base island, and a third base island; The first base island is used to carry the first forward-conducting insulating gate device, the second forward-conducting insulating gate device, and the fast recovery device; The second base island is connected to both the first base island and the power factor correction integrated circuit. The third base island is used to carry the first reverse-conducting insulating gate device and the second reverse-conducting insulating gate device.

12. The intelligent power module according to claim 2, characterized in that, Also includes: A molding compound is used to enclose the intelligent power module in its external shape.

13. A chip, characterized in that, Includes the smart power module as described in any one of claims 1-12.

Images