Silicon carbide mosfet gate drive circuit for a drive-by-wire chassis

Abstract

The silicon carbide MOSFET controllable gate driving circuit for the drive-by-wire chassis can accurately control the switching process of the silicon carbide MOSFET according to the control signal sent by the control module; the feedback module is connected with the silicon carbide MOSFET and the control module, the working state signal of the silicon carbide MOSFET can be detected by the feedback module, and the working state signal is sent to the control module, so that the control module dynamically adjusts the control signal according to the working state signal, the adaptive adjustment of the gate driving parameter is realized, and the reliability and stability of the silicon carbide MOSFET are improved.

Description

Technical Field

[0001] This utility model relates to the field of drive circuit technology for drive-by-wire chassis execution systems, with applications such as distributed drive, drive-by-wire suspension, and drive-by-wire steering. Specifically, it relates to a silicon carbide MOSFET controllable gate drive circuit for drive-by-wire chassis. Background Technology

[0002] With the continuous development of power electronics technology, the requirements for the performance of power devices in drive-by-wire chassis actuators are increasing. Silicon carbide MOSFETs (metal-oxide-semiconductor field-effect transistors) have been widely used in the field of chassis electronic control of new energy vehicles due to their advantages such as high voltage resistance, low on-resistance, and high switching speed.

[0003] In practical applications of silicon carbide MOSFETs, the gate drive circuit plays a crucial role in their performance. Traditional gate drive circuits have some problems, such as the inability to accurately control the switching process of silicon carbide MOSFETs, especially under high-frequency switching conditions, which leads to problems such as high switching losses and strong electromagnetic interference. In addition, under different operating conditions, traditional gate drive circuits are difficult to adaptively adjust the gate drive parameters, which affects the reliability and stability of silicon carbide MOSFETs. Utility Model Content

[0004] The purpose of this invention is to overcome one or more shortcomings in the prior art and provide a silicon carbide MOSFET controllable gate drive circuit for a wire-controlled chassis.

[0005] To achieve the above objectives, the technical solution adopted by this utility model is a silicon carbide MOSFET controllable gate drive circuit for a wire-controlled chassis, comprising a control module, a gate signal drive input module, and a gate voltage adjustment module. The control module is signal-connected to the input terminal of the gate signal drive input module, the output terminal of the gate signal drive input module is signal-connected to the input terminal of the gate voltage adjustment module, and the output terminal of the gate voltage adjustment module is connected to the gate of the silicon carbide MOSFET to drive the silicon carbide MOSFET. It also includes a drive capability control module and a feedback module. The input terminal of the drive capability control module is connected to the control module to receive control signals issued by the control module. The control signals include pulse signals and analog signals. The output terminal of the drive capability control module is connected in parallel to the gate of the silicon carbide MOSFET to precisely control the switching process of the silicon carbide MOSFET. The feedback module is signal-connected to the silicon carbide MOSFET and the control module. The feedback module is used to detect the operating status signal of the silicon carbide MOSFET and send it to the control module. The control module dynamically adjusts the issued control signal according to the operating status signal.

[0006] Preferably, the drive capability control module includes an amplifier and a power drive transistor connected in series. The gain control pin of the amplifier is connected to the control module to receive the analog signal. The amplifier is also connected to the control module through a first line to receive the pulse signal. The power drive transistor is a MOS transistor. The gate of the power drive transistor is connected to the output terminal of the amplifier. The source of the power drive transistor is grounded. The drain output terminal of the power drive transistor forms a common bus point.

[0007] More preferably, the common bus point is connected in parallel to the gate of the silicon carbide MOSFET.

[0008] More preferably, the drain input terminal of the power drive transistor is also connected to a gate charge pump.

[0009] Preferably, the feedback module includes two voltage and current detection chips, one of which is connected to the gate of the silicon carbide MOSFET and the control module, and the other is connected to the drain of the silicon carbide MOSFET and the control module.

[0010] Preferably, the operating status signal includes the drain-source voltage signal and drain current signal of the silicon carbide MOSFET.

[0011] Preferably, the gate signal drive input module includes an isolation optocoupler module and a level conversion module connected in series. The input terminal of the isolation optocoupler module is connected to the control module signal to receive the analog signal, isolate it, and send it to the level conversion module. The level conversion module converts the signal into a drive control signal and outputs it to the gate voltage adjustment module.

[0012] More preferably, the level conversion module is also connected to the input terminal of the isolation optocoupler module via a second line to monitor the drive signal with a feedback signal.

[0013] Preferably, the gate voltage regulation module includes a microcontroller and a voltage regulation circuit. The input terminal of the microcontroller is connected to the output terminal of the level conversion module to receive the drive control signal. The input terminal of the voltage regulation circuit is connected to the output terminal of the microcontroller, and the output terminal of the voltage regulation circuit is connected to the gate of the silicon carbide MOSFET.

[0014] More preferably, the voltage regulation circuit includes multiple voltage regulation units connected in parallel. Each voltage regulation unit is composed of a controllable switch and a resistor connected in series. The resistance value of each voltage regulation unit is different to adapt to different operating conditions.

[0015] Due to the application of the above technical solution, this utility model has the following advantages compared with the prior art: This utility model provides a controllable gate drive circuit for a silicon carbide MOSFET used in a wire-controlled chassis. It includes a control module, a gate signal drive input module, and a gate voltage adjustment module connected in sequence. The output of the gate voltage adjustment module is connected to the gate of the silicon carbide MOSFET to drive it. The circuit also includes a drive capability control module and a feedback module. The input of the drive capability control module is connected to the control module, and its output is connected in parallel to the gate of the silicon carbide MOSFET. This allows for precise control of the switching process of the silicon carbide MOSFET based on the control signal received from the control module. Furthermore, the feedback module is connected to both the silicon carbide MOSFET and the control module. It can detect the operating status signal of the silicon carbide MOSFET and send it to the control module, enabling the control module to dynamically adjust the control signal based on the operating status signal. This achieves adaptive adjustment of the gate drive parameters, improving the reliability and stability of the silicon carbide MOSFET. Attached Figure Description

[0016] Figure 1 This is a simplified structural diagram of a preferred embodiment of the present invention.

[0017] Figure 2 yes Figure 1 A schematic diagram of the connection of the gate signal drive input module.

[0018] Figure 3 yes Figure 1 Circuit connection diagram of the gate voltage regulation module.

[0019] Figure 4 yes Figure 1 A connection diagram of the drive capability control module.

[0020] Figure 5 yes Figure 1 Circuit connection diagram of the feedback module.

[0021] The components are as follows: 10. Control module; 20. Gate signal drive input module; 21. Isolation optocoupler module; 22. Level conversion module; 23. Second line; 30. Gate voltage adjustment module; 31. Microcontroller; 32. Voltage adjustment circuit; 33. Controllable switch; 34. Resistor; 41. Gate; 50. Drive capability control module; 51. Amplifier; 52. Power drive transistor; 53. First line; 54. Common bus point; 55. Gate charge pump; 60. Feedback module. Detailed Implementation

[0022] like Figures 1 to 5 As shown, the silicon carbide MOSFET controllable gate drive circuit for a wire-controlled chassis provided by this utility model includes a control module 10, a gate signal drive input module 20, and a gate voltage adjustment module 30. The control module 10 is signal-connected to the input terminal of the gate signal drive input module 20, and the output terminal of the gate signal drive input module 20 is signal-connected to the input terminal of the gate voltage adjustment module 30. The output terminal of the gate voltage adjustment module 30 is connected to the gate 41 of the silicon carbide MOSFET 40 to drive the silicon carbide MOSFET 40. The controllable gate drive circuit also includes a drive capability control module 50 and a feedback module 60. The input terminal of the drive capability control module 50 is connected to the control module 10 to receive control signals issued by the control module 10. These control signals include pulse signals and analog signals. The output terminal of the drive capability control module 50 is connected in parallel to the gate 41 of the silicon carbide MOSFET 40 to precisely control the switching process of the silicon carbide MOSFET 40. The feedback module 60 is signal-connected to the silicon carbide MOSFET 40 and the control module 10, and is used to detect the silicon carbide MOSFET. The system sends the working status signal of 40 to the control module 10, and the control module 10 dynamically adjusts the control signal it sends based on the working status signal.

[0023] The advantage of this configuration is that the drive capability control module can precisely control the switching process of the silicon carbide MOSFET 40 according to the control signal issued by the control module, and can also form a closed-loop feedback through the feedback module, so that the control signal issued by the control module can be adaptively adjusted according to the gate drive parameters, thereby improving the reliability and stability of the silicon carbide MOSFET 40.

[0024] In this embodiment, the control module 10 uses a TC234 MCU chip. The drive capability control module 50 includes an amplifier 51 and a power drive transistor 52 connected in series. The amplifier 51 is an OPA211, and its gain control pin Vg is connected to the control module 10 to receive the analog signal sent by the control module 10. The amplifier 51 is also connected to the control module 10 through the first line 53 to receive the PWM pulse signal. The power drive transistor 52 is a MOS transistor, model BSP75N. The gate of the power drive transistor 52 is connected to the output terminal of the amplifier 51, the source of the power drive transistor 52 is grounded, and the drain output terminal of the power drive transistor 52 forms a common bus point 54, which is connected in parallel to the gate 41 of the silicon carbide MOSFET 40.

[0025] Furthermore, a gate charge pump 55 is connected to the drain input terminal of the power drive transistor 52. The gate charge pump 55 is a TPS61040. The gate charge pump 55 is used to boost the voltage and generate a -5V turn-off voltage to meet the bias requirements of the silicon carbide MOSFET 40.

[0026] In this embodiment, the feedback module 60 includes two voltage and current detection chips 61. One voltage and current detection chip 61 is connected to the gate 41 of the silicon carbide MOSFET 40 and the control module 10, and the other is connected to the drain 42 of the silicon carbide MOSFET 40 and the control module 10. The operating status signal includes the drain-source voltage signal (Vds) and the drain current signal (Id) of the silicon carbide MOSFET 40.

[0027] In this embodiment, the gate signal drive input module 20 includes an isolation optocoupler module 21 and a level conversion module 22 connected in series. The isolation optocoupler module 21 uses a 6N137 microcontroller. The input terminal of the isolation optocoupler module 21 is connected to the control module 10 to receive analog signals, isolate them, and send them to the level conversion module 22. The level conversion module 22 uses a 74LVC1T45 microcontroller. The level conversion module 22 converts the received signals into drive control signals PWM1-4 and outputs them to the gate voltage adjustment module 30.

[0028] Furthermore, the level conversion module 22 is also connected to the input terminal of the isolation optocoupler module 21 via the second line 23 to monitor the drive signal with feedback signals.

[0029] In this embodiment, the gate voltage regulation module 30 includes a microcontroller 31 and a voltage regulation circuit 32. The input terminals (pins A1-A4) of the microcontroller 31 are connected to the output terminals of the level conversion module 22 to receive drive control signals PWM1-4 respectively. The input terminal of the voltage regulation circuit 32 is connected to the output terminals (pins B1-B4) of the microcontroller 31, and the output terminal of the voltage regulation circuit 32 is connected to the gate 41 of the silicon carbide MOSFET 40.

[0030] Furthermore, the voltage regulation circuit 32 includes four parallel voltage regulation units, which are respectively connected to the four output terminals (pins B1-B4) of the microcontroller 31. Each voltage regulation unit is composed of a controllable switch 33 and a resistor 34 connected in series. The resistance value of the resistor 34 in each voltage regulation unit is different to adapt to different operating conditions.

[0031] The controllable gate drive circuit can acquire the drain-source voltage (Vds) and drain current (Id) in real time. When the detected Vds is in a high voltage state and Id is approximately zero, the MCU chip of the control module 10 determines that the silicon carbide MOSFET 40 is in the initial stage of turn-on. At this time, the control module 10 sends a control signal to enable the drive capability control module 50 to provide a large drive current to the gate of the silicon carbide MOSFET 40. Under the action of the large drive current, the gate voltage of the silicon carbide MOSFET 40 rises rapidly, accelerating the turn-on process of the silicon carbide MOSFET 40. As the gate voltage of the silicon carbide MOSFET 40 rises, Id begins to gradually increase, and Vds begins to decrease. When the rate of decrease of Vds (dVds / dt) reaches a certain value and the silicon carbide MOSFET... When the gate voltage of MOSFET 40 remains essentially constant, the control module 10 determines that it has entered the Miller plateau stage. At this time, the control module 10 adjusts the control signal to reduce the drive current provided by the drive capability control module 50, thereby reducing dVds / dt and reducing electromagnetic interference. When Vds drops to near the on-state voltage drop, Id approaches the rated value, and the control module 10 determines that it has entered the late stage of the turn-on process. At this time, the control module 10 adjusts the control signal again to increase the drive current provided by the drive capability control module 50, thereby accelerating the turn-on process of the silicon carbide MOSFET 40.

[0032] The above embodiments are only for illustrating the technical concept and features of this utility model. Their purpose is to enable those skilled in the art to understand the content of this utility model and implement it accordingly. They should not be used to limit the protection scope of this utility model. All equivalent changes or modifications made in accordance with the spirit and essence of this utility model should be included within the protection scope of this utility model.

Claims

1. A silicon carbide MOSFET controllable gate drive circuit for a wire-controlled chassis, comprising a control module, a gate signal drive input module, and a gate voltage adjustment module, wherein the control module is signal-connected to the input terminal of the gate signal drive input module, the output terminal of the gate signal drive input module is signal-connected to the input terminal of the gate voltage adjustment module, and the output terminal of the gate voltage adjustment module is connected to the gate of the silicon carbide MOSFET to drive the silicon carbide MOSFET; Its features are: It also includes a drive capability control module and a feedback module. The input terminal of the drive capability control module is connected to the control module to receive control signals issued by the control module. The control signals include pulse signals and analog signals. The output terminal of the drive capability control module is connected to the gate of the silicon carbide MOSFET to precisely control the switching process of the silicon carbide MOSFET. The feedback module is connected to the silicon carbide MOSFET and the control module. The feedback module is used to detect the operating status signal of the silicon carbide MOSFET and send it to the control module. The control module dynamically adjusts the issued control signal according to the operating status signal.

2. The silicon carbide MOSFET controllable gate drive circuit according to claim 1, characterized in that: The drive capability control module includes an amplifier and a power drive transistor connected in series. The gain control pin of the amplifier is connected to the control module to receive the analog signal. The amplifier is also connected to the control module through a first line to receive the pulse signal. The power drive transistor is a MOS transistor. The gate of the power drive transistor is connected to the output terminal of the amplifier. The source of the power drive transistor is grounded. The drain output terminal of the power drive transistor forms a common bus point.

3. The silicon carbide MOSFET controllable gate drive circuit according to claim 2, characterized in that: The common bus point is connected in parallel to the gate of the silicon carbide MOSFET.

4. The silicon carbide MOSFET controllable gate drive circuit according to claim 2, characterized in that: The drain input terminal of the power drive transistor is also connected to a gate charge pump.

5. The silicon carbide MOSFET controllable gate drive circuit according to claim 1, characterized in that: The feedback module includes two voltage and current detection chips. One of the voltage and current detection chips is connected to the gate of the silicon carbide MOSFET and the control module, and the other is connected to the drain of the silicon carbide MOSFET and the control module.

6. The silicon carbide MOSFET controllable gate drive circuit according to claim 1, characterized in that: The operating status signals include the drain-source voltage signal and drain current signal of the silicon carbide MOSFET.

7. The silicon carbide MOSFET controllable gate drive circuit according to claim 1, characterized in that: The gate signal drive input module includes an isolation optocoupler module and a level conversion module connected in series. The input terminal of the isolation optocoupler module is connected to the control module signal to receive the analog signal, isolate it, and send it to the level conversion module. The level conversion module converts the signal into a drive control signal and outputs it to the gate voltage adjustment module.

8. The silicon carbide MOSFET controllable gate drive circuit according to claim 7, characterized in that: The level conversion module is also connected to the input terminal of the isolation optocoupler module via a second line to monitor the drive signal with a feedback signal.

9. The silicon carbide MOSFET controllable gate drive circuit according to claim 7, characterized in that: The gate voltage regulation module includes a microcontroller and a voltage regulation circuit. The input terminal of the microcontroller is connected to the output terminal of the level conversion module to receive the drive control signal. The input terminal of the voltage regulation circuit is connected to the output terminal of the microcontroller, and the output terminal of the voltage regulation circuit is connected to the gate of the silicon carbide MOSFET.

10. The silicon carbide MOSFET controllable gate drive circuit according to claim 9, characterized in that: The voltage regulation circuit includes multiple voltage regulation units connected in parallel. Each voltage regulation unit is composed of a controllable switch and a resistor connected in series. The resistance value of each voltage regulation unit is different to adapt to different operating conditions.

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