Display panel and display device

Abstract

The application discloses a display panel and a display device. The display panel comprises a substrate, a light shielding layer, an active layer, a first conductive layer, a first connecting structure and a second connecting structure. The light shielding layer comprises a connecting trace, the active layer comprises a channel portion and two contact portions connected with each other, and the two contact portions are located on the two sides of the channel portion, respectively. The first conductive layer comprises a source-drain layer and a signal trace, the signal trace is located in a peripheral area, and the source-drain layer is located in an array area. The first connecting structure is connected between the signal trace and the connecting trace, and the second connecting structure is connected between the source-drain layer and the contact portion. The second connecting structure penetrates through the contact portion, and the size of the second connecting structure along the thickness direction of the substrate is smaller than the size of the first connecting structure along the thickness direction. By reducing the depth of the second connecting structure relative to the first connecting structure, the second connecting structure is prevented from contacting the substrate, so that metal ions in the substrate are prevented from entering the channel portion along the second connecting structure, thereby reducing device pollution.

Description

Technical Field

[0001] This application relates to the field of display technology, and more particularly to a display panel and a display device. Background Technology

[0002] Currently, applications such as laptops, tablets, and automotive displays have an urgent need for improved panel performance. The development trend of small- and medium-sized panel displays is towards higher resolution and higher refresh rates. Therefore, improving active layer mobility and reducing metal signal line impedance have become major challenges. In particular, as the size of automotive long-screen panels gradually increases, and tablets and laptops increasingly demand high refresh rates, high resolutions, and narrow bezels, the need for low-temperature polycrystalline silicon (LTPS) products with low metal line impedance is becoming even more urgent.

[0003] In one structure, the second via connecting the source / drain layer and the active layer can be etched together with the first via connecting the signal trace and the trace in the peripheral area. However, this can easily cause the second via to come into contact with the substrate, which can lead to the introduction of metal ions from the substrate through the second via and contaminate the device, thus reducing the device performance. Utility Model Content

[0004] This application provides a display panel that avoids contact between the second connection structure and the substrate, thereby reducing device contamination.

[0005] This application provides a display panel including an array region and a peripheral region. The display panel includes: a substrate; a light-shielding layer located on the substrate, the light-shielding layer including connection traces located in the peripheral region; an active layer located on the side of the light-shielding layer away from the substrate, the active layer including a channel portion and two contact portions connected together, the two contact portions being located on opposite sides of the channel portion; a first conductive layer located on the side of the active layer away from the substrate, the first conductive layer including source-drain layers and signal traces, the signal traces being located in the peripheral region, the source-drain layers being located in the array region; a first connection structure and a second connection structure, the first connection structure being located in the peripheral region and connecting the signal traces and the connection traces, the second connection structure being located in the array region and connecting the source-drain layers and the contact portions; the second connection structure extending through the contact portions, and the dimension of the second connection structure along the thickness direction of the substrate being smaller than the dimension of the first connection structure along the thickness direction.

[0006] In some embodiments, the system further includes: a first insulating layer located between the substrate and the active layer, the first insulating layer covering the light-shielding layer; wherein the depth of the second connection structure within the first insulating layer is less than the depth of the first connection structure within the first insulating layer.

[0007] In some embodiments, the two contact portions are respectively located on both sides of the channel portion along a first direction, the first direction being parallel to the surface of the substrate; the source-drain layer includes a source layer and a drain layer, the second connection structure includes a first sub-connection structure and a second sub-connection structure, the first sub-connection structure connecting the source layer and one of the contact portions, and the second sub-connection structure connecting the drain layer and another contact portion; the light-shielding layer further includes a light-shielding portion located in the array region, the light-shielding portion being located in the region between the first sub-connection structure and the second sub-connection structure, and the dimension of the light-shielding portion along the first direction being greater than or equal to the dimension of the channel portion along the first direction.

[0008] In some embodiments, the first insulating layer includes a first surface connected to the substrate, and the second connection structure is at a distance greater than or equal to 100 nm from the first surface along the thickness direction.

[0009] In some embodiments, the second connection structure includes a first connection segment and a second connection segment connected together, the first connection segment being located between the contact portion and the source / drain layer, and the second connection segment penetrating the contact portion and extending into the first insulating layer; the first connection segment and the second connection segment are connected in a stepped shape.

[0010] In some embodiments, the first connecting segment includes a first connecting end connected to the contact portion, and the second connecting segment includes a second connecting end connected to the first connecting end; the first connecting end is disposed around the second connecting end, and the radius of the first connecting end is greater than the radius of the second connecting end.

[0011] In some embodiments, the radius of the first connection end is greater than or equal to 2 micrometers, and the difference between the radius of the first connection end and the radius of the second connection end is greater than or equal to 0.5 micrometers.

[0012] In some embodiments, the first connecting segment includes a first connecting hole, the second connecting segment includes a second connecting hole, and the second connecting structure includes a second conductive layer connected to the first conductive layer, the second conductive layer filling the second connecting hole, the sidewall of the first connecting hole, and the surface of the contact portion exposed between the first connecting hole and the second connecting hole.

[0013] In some embodiments, the first connection structure has a first end and a second end disposed opposite to each other, the first end being connected to the signal trace, and the radius of the first connection structure gradually decreasing from the first end to the second end; the second connection structure includes a third end and a fourth end, the third end being connected to the source-drain layer, and the radius of the second connection structure gradually decreasing from the third end to the fourth end.

[0014] This embodiment also provides a display device, characterized in that it includes the display panel of any of the above embodiments.

[0015] In the display panel of this application embodiment, the first connection structure connects signal traces and connection traces in the peripheral area, and the second connection structure connects the contact portion of the source / drain layer and the active layer in the array area, and penetrates through the contact portion. Since the dimension of the second connection structure along the substrate thickness direction is smaller than the dimension of the first connection structure along the substrate thickness direction, this application avoids contact between the second connection structure and the substrate by reducing the depth of the second connection structure relative to the first connection structure, thereby preventing metal ions in the substrate from entering the channel portion along the second connection structure, and thus reducing device contamination.

[0016] Other features and advantages of this application will be described in detail in the following detailed description section. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings, wherein the same reference numerals in the following description denote the same parts.

[0019] Figure 1 This is a cross-sectional structural diagram of a display panel provided in some embodiments of this application;

[0020] Figure 2 This is another cross-sectional structural schematic diagram of the display panel provided in some embodiments of this application;

[0021] Figure 3 This is a schematic diagram of the structure of a display device provided in some embodiments of this application.

[0022] Explanation of reference numerals in the attached figures:

[0023] 100. Display panel; 101. Array area; 102. Peripheral area;

[0024] 10. Substrate;

[0025] 20. Light-shielding layer; 21. Connecting trace; 211. Second surface; 212. Groove; 20a. First metal layer; 20b. Second metal layer; 22. Light-shielding part;

[0026] 30. Active layer; 31. Channel section; 32. Contact section; 321. Lightly doped section; 322. Heavyly doped section;

[0027] 40. First conductive layer; 41. Source-drain layer; 411. Source layer; 412. Drain layer; 42. Signal trace; 421. Touch line; 422. Bridge line;

[0028] 50. First connecting structure; 51. First end; 52. Second end;

[0029] 60. Second connecting structure; 60a. First sub-connecting structure; 60b. Second sub-connecting structure; 61. Third end; 62. Fourth end; 601. First connecting segment; 601a. ​​First connecting end; 601V. First connecting hole; 602a. Second connecting segment; 602V. Second connecting hole;

[0030] M, second conductive layer; C1, annular contact area; C2, sidewall contact area;

[0031] 70. Third conductive layer; 71. Gate layer; 72. Scan line;

[0032] 81. First insulating layer; 811. First surface; 82. Second insulating layer; 83. Third insulating layer; 84. Fourth insulating layer; 85. Fifth insulating layer;

[0033] 91. First transparent conductive layer; 911. Common electrode block; 92. Second transparent conductive layer; 921. Pixel electrode. Detailed Implementation

[0034] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the protection scope of this application.

[0035] In one embodiment, the second connection structure connecting the source / drain layer and the active layer can be etched together with the first connection structure connecting the signal traces and the traces in the peripheral region. However, this can easily cause the second connection structure to come into contact with the substrate, resulting in metal ions in the substrate entering the channel from the second connection structure and contaminating the device, thus reducing device performance.

[0036] Based on this, this application provides a display panel, which includes an array region and a peripheral region. The display panel includes: a substrate; a light-shielding layer located on the substrate, the light-shielding layer including connection traces located in the peripheral region; an active layer located on the side of the light-shielding layer away from the substrate, the active layer including a channel portion and two contact portions connected together, the two contact portions being located on opposite sides of the channel portion; a first conductive layer located on the side of the active layer away from the substrate, the first conductive layer including a source-drain layer and a signal trace, the signal trace being located in the peripheral region, the source-drain layer being located in the array region; a first connection structure and a second connection structure, the first connection structure being located in the peripheral region and connecting the signal trace and the connection trace, the second connection structure being located in the array region and connecting the source-drain layer and the contact portion; the second connection structure penetrates the contact portion, and the dimension of the second connection structure along the thickness direction of the substrate is smaller than the dimension of the first connection structure along the thickness direction.

[0037] In the display panel of this application embodiment, the first connection structure connects signal traces and connection traces in the peripheral area, and the second connection structure connects the contact portion of the source / drain layer and the active layer in the array area, and penetrates through the contact portion. Since the dimension of the second connection structure along the substrate thickness direction is smaller than the dimension of the first connection structure along the substrate thickness direction, this application avoids contact between the second connection structure and the substrate by reducing the depth of the second connection structure relative to the first connection structure, thereby preventing metal ions in the substrate from entering the channel portion along the second connection structure, and thus reducing device contamination.

[0038] The structure of the display panel provided in the embodiments of this application will be described below with reference to the accompanying drawings.

[0039] Please see Figure 1 , Figure 1 This is a cross-sectional structural diagram of a display panel provided in some embodiments of this application.

[0040] The display panel 100 includes an array region 101 and a peripheral region 102. The display panel 100 also includes a substrate 10, a light-shielding layer 20, an active layer 30, a first conductive layer 40, a first connection structure 50, and a second connection structure 60. The light-shielding layer 20 is located on the substrate 10 and includes connection traces 21 located in the peripheral region 102. The active layer 30 is located on the side of the light-shielding layer 20 facing away from the substrate 10. The active layer 30 includes a channel portion 31 connected to each other and two contact portions 32, with the two contact portions 32 located on opposite sides of the channel portion 31. The first conductive layer 40 is located on the side of the active layer 30 facing away from the substrate 10. The first conductive layer 40 includes a source-drain layer 41 and signal traces 42 located in the peripheral region 102, and the source-drain layer 41 located in the array region 101. A first connection structure 50 and a second connection structure 60 are located in the peripheral region 102 and connect the signal trace 42 and the connection trace 21. The second connection structure 60 is located in the array region 101 and connects the source / drain layer 41 and the contact portion 32. The second connection structure 60 extends through the contact portion 32, and the dimension L2 of the second connection structure 60 along the thickness direction of the substrate 10 is smaller than the dimension L1 of the first connection structure 50 along the thickness direction.

[0041] The peripheral area 102 can be set around the array area 101. For example, the array area 101 overlaps with the display area of ​​the display panel 100, and the peripheral area 102 overlaps with the non-display area of ​​the display panel 100.

[0042] The substrate 10 can be a glass substrate 10. If Na+ and K+ ions diffuse into the channel portion 31 in the glass, it can easily cause the device's electrical performance to deteriorate.

[0043] The light-shielding layer 20 includes a connection trace 21, which is used to connect the signal trace 42 to the drive unit so as to realize the electrical connection between the signal trace 42 and the drive unit through the connection trace 21.

[0044] In some embodiments, the light-shielding layer 20 may include a first metal layer 20a and a second metal layer 20b. The first metal layer 20a is located between the substrate 10 and the second metal layer 20b, and the reflectivity of the first metal layer 20a is greater than that of the second metal layer 20b. Thus, when the display panel 100 is applied to a liquid crystal display device, the first metal layer 20a reflects backlight from different directions emitted by the backlight module of the liquid crystal display device. The reflected backlight is then reused after entering the backlight module, improving the utilization rate of the backlight, increasing the light extraction efficiency of the panel, and ultimately improving the display brightness of the display panel 100.

[0045] In some embodiments, the material of the first metal layer 20a is selected from at least one of aluminum, aluminum alloy, copper, and copper alloy. The material of the second metal layer 20b is selected from at least one of molybdenum, molybdenum alloy, titanium, and titanium alloy. Thus, while the light-shielding layer 20 has low impedance, the reflectivity of the first metal layer 20a is greater than that of the second metal layer 20b. Furthermore, the second metal layer 20b protects the first metal layer 20a, reducing the risk of corrosion of the first metal layer 20a.

[0046] For example, the first metal layer 20a comprises aluminum, and the second metal layer 20b comprises molybdenum. Thus, the first metal layer 20a has high reflectivity and low impedance to light, while the second metal layer 20b protects the first metal layer 20a and also has high temperature resistance.

[0047] In some embodiments, the thickness of the first metal layer 20a may be greater than the thickness of the second metal layer 20b. This improves the reflectivity of the first metal layer 20a to backlight and increases the utilization rate of the backlight.

[0048] In other embodiments, the thickness of the first metal layer 20a may be less than or equal to the thickness of the second metal layer 20b. This improves the utilization rate of the backlight and reduces the impedance of the light-shielding layer 20, while also reducing the risk of other film layers breaking due to excessive thickness of the light-shielding layer 20.

[0049] The active layer 30 may include, but is not limited to, at least one of a low-temperature polycrystalline silicon active layer 30, an amorphous silicon active layer 30, and a metal oxide active layer 30. For example, the active layer 30 is a low-temperature polycrystalline silicon active layer 30. This improves the high-temperature resistance and other properties of the active layer 30.

[0050] A channel portion 31 connects two contact portions 32. Each contact portion 32 includes a lightly doped portion 321 and a heavily doped portion 322, with the lightly doped portion 321 connecting the channel portion 31 and the heavily doped portion 322. For example, the two contact portions 32 are located on opposite sides of the channel portion 31 along a first direction parallel to the surface of the substrate 10. The second connection structure 60 can penetrate the heavily doped portion 322 to reduce contact resistance.

[0051] The first conductive layer 40 may include a patterned source / drain layer 41 and a signal trace 42. The source / drain layer 41 may include a source layer 411 and a drain layer 412. The source layer 411 and the drain layer 412 are respectively connected to the contact portion 32 through a second connection structure 60. That is, in this embodiment, there are two second connection structures 60. The two second connection structures 60 include a first sub-connection structure 60a and a second sub-connection structure 60b. The first sub-connection structure 60a connects the source layer 411 and one contact portion 32, and the second sub-connection structure 60b connects the drain layer 412 and another contact portion 32.

[0052] The first conductive layer 40 may further include a touch line 421, which is located in the array region 101 and connected to the touch electrode. In some embodiments, the signal trace 42 may include at least one of a data line and a touch trace. That is, the signal trace 42 can connect the data line to the connection trace 21 through the first connection structure 50, or it can connect the touch trace to the connection trace 21 through the first connection structure 50. The data line and the touch trace are located in the peripheral region 102, and the touch trace can be electrically connected to the touch line 421 in the array region 101. Figure 1 As shown, the display panel 100 further includes a third conductive layer 70, which is located between the first conductive layer 40 and the active layer 30. The third conductive layer 70 includes a gate layer 71 and a scan line 72 disposed on the same layer. The signal trace 42 further includes a bridging wire 422, which is connected to the scan line 72 via a via. That is, the first connection structure 50 connects the bridging wire 422 and the connection trace 21, thereby achieving an electrical connection between the connection trace 21 and the scan line 72.

[0053] The scan line 72 can also be a touch trace, thereby achieving electrical connection between the touch trace and the connection trace 21 using the first connection structure 50 and the bridging wire 422. In some embodiments, the scan line 72 can also be metal with other peripheral patterns, thereby achieving electrical connection between metal with other peripheral patterns and the connection trace 21 using the first connection structure 50 and the bridging wire 422.

[0054] In some embodiments, the third conductive layer 70 may include multiple stacked metal layers to reduce the impedance of the gate layer 71 and the scan line 72. For example, the third conductive layer 70 is a Mo / Al / Mo stack.

[0055] The top of the first connection structure 50 and the top of the second connection structure 60 are respectively connected to the signal trace 42 and the source / drain layer 41 in the first conductive layer 40. The bottom of the first connection structure 50 is connected to the connection trace 21, and the bottom of the second connection structure 60 is located below the contact portion 32 and spaced apart from the substrate 10. That is, the top of the first connection structure 50 and the top of the second connection structure 60 are flush, and the top surfaces of both the first connection structure 50 and the second connection structure 60 are connected to the bottom surface of the first conductive layer 40.

[0056] The display panel 100 may further include a first insulating layer 81, which is located between the substrate 10 and the active layer 30, and covers the light-shielding layer 20. The depth S2 of the second connection structure 60 within the first insulating layer 81 is less than the depth S1 of the first connection structure 50 within the first insulating layer 81. This ensures that a portion of the first insulating layer 81 remains between the bottom of the second connection structure 60 and the substrate 10. The first insulating layer 81 effectively prevents Na+ / K+ ions in the substrate 10 from entering the channel portion 31, thereby solving the problem of device electrical degradation and improving device performance.

[0057] The display panel 100 may further include a second insulating layer 82, which is located on the side of the first insulating layer 81 away from the substrate 10 and covers the active layer 30. A third insulating layer 83 is located on the side of the second insulating layer 82 away from the substrate 10. The first conductive layer 40 is located on the side of the third insulating layer 83 away from the substrate 10, and the first connection structure 50 and the second connection structure 60 penetrate the third insulating layer 83, the second insulating layer 82, the contact portion 32, and a portion of the first insulating layer 81.

[0058] The first insulating layer 81 can be a buffer layer, the second insulating layer 82 can be a gate insulating layer, and the third insulating layer 83 can be an interlayer dielectric layer. The materials used for the first insulating layer 81, the second insulating layer 82, and the third insulating layer 83 include, but are not limited to, SiO2. X or SiN X Or inorganic materials such as Al2O3.

[0059] The light-shielding layer 20 may further include a light-shielding portion 22 located in the array region 101. The light-shielding portion 22 blocks incident light, improving the problem of incident light entering the channel portion 31 and causing photogenerated carriers to be generated in the active layer 30. The light-shielding portion 22 is located in the region between the first sub-connection structure 60a and the second sub-connection structure 60b, and the dimension W1 of the light-shielding portion 22 along the first direction is less than or equal to the dimension W2 of the channel portion 31 along the first direction. This ensures the blocking effect of the light-shielding portion 22 on the channel portion 31 and also prevents the bottom of the second connection structure 60 from contacting the light-shielding portion 22, thus preventing electrical crosstalk.

[0060] In some embodiments, the distance D1 between the second connecting structure 60 and the light-shielding part 22 along the thickness direction is greater than 0, so that even if there are process errors in the light-shielding part 22, the second connecting structure 60 can be guaranteed not to contact the light-shielding part 22.

[0061] In some embodiments, the first insulating layer 81 includes a first surface 811 connected to the substrate 10, and the distance D2 between the second connection structure 60 and the first surface 811 along the thickness direction is greater than or equal to 100 nm, so as to improve the insulation performance between the second connection structure 60 and the substrate 10. For example, the vertical distance D2 between the second connection structure 60 and the first surface 811 is 100 nm to 300 nm.

[0062] In some embodiments, the connection trace 21 may include a second surface 211 on the side opposite to the substrate 10, and the connection trace 21 has a groove 212 recessed relative to the first surface 811. The bottom of the first connection structure 50 is located in the groove 212, thereby increasing the contact area between the first connection structure 50 and the connection trace 21 and reducing the contact resistance.

[0063] like Figure 1 As shown, the first connection structure 50 has a first end 51 and a second end 52 disposed opposite to each other. The first end 51 is connected to the signal trace 42, and the radius of the first connection structure 50 gradually decreases from the first end 51 to the second end 52. The second connection structure 60 includes a third end 61 and a fourth end 62. The third end 61 is connected to the source-drain layer 41, and the radius of the second connection structure 60 gradually decreases from the third end 61 to the fourth end 62. Therefore, both the first connection structure 50 and the second connection structure 60 can be formed using a single etching process.

[0064] In some embodiments, the first connection structure 50 and the second connection structure 60 can be formed in the same etching process. The difference in this etching process is that the second connection structure 60 requires etching of the contact portion 32. Therefore, by adjusting the etching selectivity ratio of the contact portion 32 to the portion of the second insulating layer 82 corresponding to the first connection structure 50 in the etching process, the etching rate of the contact portion 32 can be reduced, thereby reducing the overall etching rate of the second connection structure 60. This results in the dimension of the second connection structure 60 along the thickness direction of the substrate 10 being smaller than the dimension of the first connection structure 50 along the thickness direction of the substrate 10.

[0065] The display panel 100 may further include a first transparent conductive layer 91 and a second transparent conductive layer 92. The first transparent conductive layer 91 is located on the side of the first conductive layer 40 that faces away from the substrate 10. The second transparent conductive layer 92 is located on the side of the first transparent conductive layer 91 that faces away from the substrate 10.

[0066] One of the first transparent conductive layer 91 and the second transparent conductive layer 92 includes a pixel electrode connected to the drain layer 412 of the thin-film transistor. The other of the first transparent conductive layer 91 and the second transparent conductive layer 92 includes a plurality of common electrode blocks. Exemplarily, the second transparent conductive layer 92 includes a pixel electrode 921, and the first transparent conductive layer 91 includes a common electrode block 911.

[0067] In some embodiments, a plurality of common electrode blocks 911 are connected to the touch line 421 through vias, so that the common electrode blocks 911 are reused as touch electrodes.

[0068] In some embodiments, a fourth insulating layer 84 is disposed between the first transparent conductive layer 91 and the third conductive layer 70. A fifth insulating layer 85 is disposed between the first transparent conductive layer 91 and the second transparent conductive layer 92.

[0069] Please see Figure 2 , Figure 2 This is another cross-sectional structural schematic diagram of the display panel provided in some embodiments of this application. This embodiment is related to... Figure 1 The difference in this embodiment lies in the structure of the second connection structure 60.

[0070] The second connection structure 60 includes a first connection segment 601 and a second connection segment 602a connected together. The first connection segment 601 is located between the contact portion 32 and the source / drain layer 41, and the second connection segment 602a penetrates the contact portion 32 and extends into the first insulating layer 81. The first connection segment 601 and the second connection segment 602a are connected in a stepped manner. Therefore, the second connection structure 60 can be fabricated in two segments, and the contact portion 32 can serve as an etch stop layer, thereby optimizing the process.

[0071] The cross-sections of the first connecting segment 601 and the second connecting segment 602a can both be circular, and the radius of the first connecting segment 601 is different from the radius of the second connecting segment 602a.

[0072] In some embodiments, the first connecting segment 601 includes a first connecting end 601a connected to the contact portion 32, and the second connecting segment 602a includes a second connecting end connected to the first connecting end 601a. ​​The first connecting end 601a is disposed around the second connecting end, and the radius of the first connecting end 601a is larger than the radius of the second connecting end. This forms an annular contact area C1 between the first connecting segment 601 and the second connecting segment 602a, and a sidewall contact area C2 is formed between the sidewall of the second connecting segment 602a and the contact portion 32. The annular contact area C1 and the sidewall contact area C2 increase the contact area between the second connecting structure 60 and the contact portion 32, thereby reducing the contact impedance between the second connecting structure 60 and the contact portion 32 and optimizing device performance.

[0073] In some embodiments, the radius of the first connection end 601a is greater than or equal to 2 micrometers, and the difference between the radius of the first connection end 601a and the radius of the second connection end is greater than or equal to 0.5 micrometers, thereby increasing the area of ​​the annular contact region C1 and further reducing the contact resistance.

[0074] In some embodiments, the radius of the fourth end 62 of the second connection structure 60 is greater than or equal to 1.5 micrometers, thereby increasing the area of ​​the sidewall contact region C2 between the second connection segment 602a and the contact portion 32, and further reducing the impedance.

[0075] In this embodiment, a first etching process can be performed to form the first connecting segment 601 and a portion of the first connecting structure 50, followed by a second etching process to form the second connecting segment 602a and the lower portion of the first connecting structure 50. In the second etching process, by adjusting the etching selectivity ratio between the contact portion 32 and the first insulating layer 81, the etching rate of the contact portion 32 is reduced, resulting in the final depth of the fourth end portion 62 of the second connecting structure 60 within the first insulating layer 81 being less than the depth of the second end portion 52 of the first connecting structure 50 within the first insulating layer 81. Here, "depth" refers to the distance between the second end portion 52 and the fourth end portion 62 and the upper surface of the first insulating layer 81.

[0076] In some embodiments, the first connecting segment 601 includes a first connecting hole 601V, and the second connecting segment 602a includes a second connecting hole 602V. The second connecting structure 60 includes a second conductive layer M connected to the first conductive layer 40. The second conductive layer M fills the second connecting hole 602V, is located on the sidewall of the first connecting hole 601V, and is located on the surface of the contact portion 32 exposed between the first connecting hole 601V and the second connecting hole 602V (i.e., the annular contact area C1). That is, the second conductive layer M is located on the inner surfaces of the first connecting hole 601V and the second connecting hole 602V, and on the surface of the annular contact area C1. Since the radius of the second connecting hole 602V is smaller than that of the first connecting hole 601V, the second conductive layer M can fill the second connecting hole 602V without completely filling the first connecting hole 601V. The fourth insulating layer 84 can fill the first connecting hole 601V and is located on the surface of the second conductive layer M within the first connecting hole 601V.

[0077] In other embodiments, voids may also be formed in the second conductive layer M in the second connection hole 602V.

[0078] This application also provides a display device, which includes the display panel in any of the above embodiments.

[0079] Please see Figure 3 , Figure 3 This is a schematic diagram of the structure of a display device provided in some embodiments of this application.

[0080] The display device 200 includes a device body and a display panel 201, which can be the display panel 100 in any of the above embodiments. Furthermore, the device body may include a frame, driving components, a power supply, etc., and the display device can be a mobile phone, tablet, television, or other display terminal, without limitation.

[0081] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0082] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0083] The embodiments, implementation methods, and related technical features of this application can be combined and substituted for each other without conflict.

[0084] The above are merely preferred embodiments of this application and are not intended to limit this application in any way. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of this application without departing from the scope of the technical solution of this application shall still fall within the scope of the technical solution of this application.

Claims

1. A display panel (100), characterized in that, The display panel (100) includes an array area (101) and a peripheral area (102), and the display panel (100) includes: base(10); A light-shielding layer (20) is located on the substrate (10), and the light-shielding layer (20) includes a connection trace (21) located in the peripheral area (102); An active layer (30) is located on the side of the light-shielding layer (20) away from the substrate (10). The active layer (30) includes a channel portion (31) and two contact portions (32) connected to each other. The two contact portions (32) are located on both sides of the channel portion (31). The first conductive layer (40) is located on the side of the active layer (30) away from the substrate (10). The first conductive layer (40) includes a source-drain layer (41) and a signal trace (42). The signal trace (42) is located in the peripheral region (102), and the source-drain layer (41) is located in the array region (101). A first connection structure (50) and a second connection structure (60), wherein the first connection structure (50) is located in the peripheral region (102) and connected between the signal trace (42) and the connection trace (21), and the second connection structure (60) is located in the array region (101) and connected between the source-drain layer (41) and the contact portion (32); the second connection structure (60) extends through the contact portion (32), and the dimension of the second connection structure (60) along the thickness direction of the substrate (10) is smaller than the dimension of the first connection structure (50) along the thickness direction.

2. The display panel (100) according to claim 1, characterized in that, Also includes: A first insulating layer (81) is located between the substrate (10) and the active layer (30), and the first insulating layer (81) covers the light-shielding layer (20); The second connection structure (60) is less than the depth of the first connection structure (50) within the first insulating layer (81).

3. The display panel (100) according to claim 1 or 2, characterized in that, The two contact portions (32) are respectively located on both sides of the channel portion (31) along a first direction, which is parallel to the surface of the substrate (10); The source-drain layer (41) includes a source layer (411) and a drain layer (412). The second connection structure (60) includes a first sub-connection structure (60a) and a second sub-connection structure (60b). The first sub-connection structure (60a) connects the source layer (411) and one of the contact portions (32). The second sub-connection structure (60b) connects the drain layer (412) and another contact portion (32). The light-shielding layer (20) further includes a light-shielding portion (22) located in the array region (101). The light-shielding portion (22) is located in the region between the first sub-connection structure (60a) and the second sub-connection structure (60b), and the size of the light-shielding portion (22) along the first direction is greater than or equal to the size of the channel portion (31) along the first direction.

4. The display panel (100) according to claim 2, characterized in that, The first insulating layer (81) includes a first surface (811) connected to the substrate (10), and the second connection structure (60) is at a distance greater than or equal to 100 nm from the first surface (811) along the thickness direction.

5. The display panel (100) according to claim 2, characterized in that, The second connection structure (60) includes a first connection segment (601) and a second connection segment (602a) connected to each other. The first connection segment (601) is located between the contact portion (32) and the source-drain layer (41), and the second connection segment (602a) passes through the contact portion (32) and extends into the first insulating layer (81). The first connecting segment (601) and the second connecting segment (602a) are connected in a stepped shape.

6. The display panel (100) according to claim 5, characterized in that, The first connecting segment (601) includes a first connecting end (601a) connected to the contact portion (32), and the second connecting segment (602a) includes a second connecting end connected to the first connecting end (601a); The first connecting end (601a) is disposed around the second connecting end, and the radius of the first connecting end (601a) is greater than the radius of the second connecting end.

7. The display panel (100) according to claim 6, characterized in that, The radius of the first connection end (601a) is greater than or equal to 2 micrometers, and the difference between the radius of the first connection end (601a) and the radius of the second connection end is greater than or equal to 0.5 micrometers.

8. The display panel (100) according to claim 5, characterized in that, The first connecting segment (601) includes a first connecting hole (601V), and the second connecting segment (602a) includes a second connecting hole (602V); The second connection structure (60) includes a second conductive layer (M) connected to the first conductive layer (40), the second conductive layer (M) filling the second connection hole (602V), located on the sidewall of the first connection hole (601V), and on the surface of the contact portion (32) exposed between the first connection hole (601V) and the second connection hole (602V).

9. The display panel (100) according to claim 1, characterized in that, The first connection structure (50) includes a first end (51) and a second end (52) disposed opposite to each other. The first end (51) is connected to the signal trace (42). From the first end (51) to the second end (52), the radius of the first connection structure (50) gradually decreases. The second connection structure (60) includes a third end (61) and a fourth end (62). The third end (61) is connected to the source-drain layer (41). From the third end (61) to the fourth end (62), the radius of the second connection structure (60) gradually decreases.

10. A display device, characterized in that, Includes the display panel (100) as described in any one of claims 1 to 9.

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