Wet etching device and machine

CN224791035UActive Publication Date: 2026-09-22HANGZHOU FULLSEMI SEMICON CO LTD
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Patent Information

Application Number
CN202521790107.0
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-08-21
Publication Date
2026-09-22
Estimated Expiration
2035-08-21

AI Technical Summary

Technical Problem

该方式存在两个问题,其一是晶圆的中心和边缘的刻蚀量不一致的问题,导致晶圆呈正碗型或倒碗型;其二是晶圆在旋转过程中存在破片风险

Benefits of technology

[0018]前述的湿法刻蚀装置包括吸盘、刻蚀液施加机构以及引流机构;所述刻蚀液施加机构包括缓存部和第一驱动部;所述缓存部为多孔结构,并与所述吸盘沿预设方向间隔排布;所述第一驱动部与所述缓存部连接,并被配置用于驱使所述缓存部沿所述预设方向移动;所述引流机构包括基体和第二驱动部;所述基体至少部分地位于所述缓存部朝向所述吸盘的一侧,所述基体为具有内孔的环形结构;所述基体的内周上设有多个抽吸口,多个所述抽吸口沿所述内孔的周向间隔设置,且所述抽吸口的轴向相对于所述内孔的径向倾斜;所述第二驱动部与所述基体连接,并被配置用于驱使所述基体沿所述预设方向移动。所述湿法刻蚀装置用于对单片晶圆进行刻蚀,工作时,先使所述吸盘吸附所述晶圆,再使所述第二驱动部驱使所述基体沿所述预设方向移动,以使所述基体靠近所述吸盘,直至所述基体通过所述内孔套设在所述晶圆的外周,随后使所述第一驱动部驱使所述缓存部沿所述预设方向移动,以使所述缓存部靠近所述吸盘,直至所述缓存部与所述晶圆之间的距离为预设距离,最后利用一刻蚀液供应部向所述缓存部供应刻蚀液,以及利用一抽吸部向各个所述抽吸口提供抽吸力,并形成旋转风场,在所述抽吸力的作用下,所述缓存部内的刻蚀液被吸到所述晶圆的表面并形成液膜,之后从所述抽吸口被吸走,由此实现所述晶圆的均匀刻蚀,避免发生刻蚀不均的情况,此外,所述晶圆无需旋转,也就避免了因旋转导致所述晶圆破片的问题。

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Abstract

The utility model provides a kind of wet etching device and platform, and wet etching device includes sucking disc, etching liquid applying mechanism and drainage mechanism;Etching liquid applying mechanism includes buffer part and first driving part;Buffer part is porous structure, and with sucking disc along preset direction interval arrangement;First driving part is connected with buffer part, and drives buffer part to move along preset direction;Drainage mechanism includes base body and second driving part;Base body is at least partially located in the side of buffer part towards sucking disc, and base body is annular structure with inner hole;The inner periphery of base body is equipped with the multiple suction ports of interval arrangement, and the axial direction of suction port is inclined relative to the radial direction of inner hole;Second driving part is connected with base body, and drives base body to move along preset direction.Wet etching device is used to etch single wafer in the case where wafer does not rotate, not only improve etching uniformity, also avoid the problem that wafer fragment is caused by rotation.
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Description

TECHNICAL FIELD

[0001] The utility model belongs to the wet etching technical field of wafer, concretely relates to a kind of wet etching device and platform. BACKGROUND

[0002] The single wafer etching operation in prior art is as follows: the wafer adsorbed on the chuck is rotated, and the nozzle located above the wafer is moved from the center of the wafer to the edge of the wafer or from the edge of the wafer to the center of the wafer, and etching liquid is sprayed to the wafer. This method has two problems. One is that the etching amount of the center and the edge of the wafer is inconsistent, which causes the wafer to be a positive bowl or an inverted bowl. The second is that there is a risk of breaking the wafer during rotation. SUMMARY

[0003] The utility model aims at providing a kind of wet etching device and platform to solve the above technical problems.

[0004] To achieve the above object, the utility model provides a kind of wet etching device, comprising:

[0005] chuck;

[0006] etching liquid application mechanism, including buffer part and first driving part, the buffer part is porous structure, and is spaced apart with the chuck in preset direction;The first driving part is connected with the buffer part, and is configured to drive the buffer part to move along the preset direction;

[0007] drainage mechanism, including base body and second driving part;The base body is at least partially located on the side of the buffer part towards the chuck, the base body is annular structure with inner hole, a plurality of suction ports are provided on the inner periphery of the base body, a plurality of the suction ports are spaced apart along the circumferential direction of the inner hole, and the axial direction of the suction port is inclined relative to the radial direction of the inner hole;The second driving part is connected with the base body, and is configured to drive the base body to move along the preset direction.

[0008] Optionally, the drainage mechanism further includes suction part and control part, the suction part is connected with a plurality of the suction ports respectively;The control part is connected with the suction part, and is configured to control the opening and closing of the suction part, and control the suction force provided by the suction part to each suction port.

[0009] Optionally, the suction part includes a plurality of sub-suction parts, each sub-suction part is connected with a suction port;The control part is configured to control the opening and closing of each sub-suction part, and control the suction force provided by each sub-suction part to the corresponding suction port.

[0010] Optionally, the number of the suction ports and the number of the sub-suction parts are both n, and each of the sub-suction parts has n gears, and the suction force corresponding to different gears is different; the control part is configured to control each of the sub-suction parts to switch among the n gears when each of the sub-suction parts is turned on, and n is an integer greater than 1.

[0011] Optionally, the number of the suction ports is greater than or equal to 8.

[0012] Optionally, the wet etching device further comprises a recovery mechanism, and the recovery mechanism is connected with the suction part.

[0013] Optionally, the buffer part is made of porous ceramic or high polymer material.

[0014] Optionally, the high polymer material comprises perfluoroalkoxy alkyl vinyl ether copolymer or polytetrafluoroethylene.

[0015] Optionally, the wet etching device further comprises an etching liquid supply part, and the etching liquid supply part is connected with the buffer part.

[0016] To achieve the above-mentioned purpose, the utility model further provides a kind of wet etching machine, including as any preceding wet etching device.

[0017] Compared with prior art, the wet etching device and machine of the utility model have the following advantages:

[0018] The wet etching device comprises a suction disc, an etching liquid applying mechanism and a flow guiding mechanism; the etching liquid applying mechanism comprises a buffer part and a first driving part; the buffer part is a porous structure and is arranged along a preset direction at intervals with the suction disc; the first driving part is connected with the buffer part and is configured to drive the buffer part to move along the preset direction; the flow guiding mechanism comprises a base and a second driving part; the base is located at least partially on a side of the buffer part facing the suction disc, and the base is an annular structure with an inner hole; a plurality of suction ports are arranged on an inner periphery of the base along a circumferential direction of the inner hole, and the axial direction of the suction ports is inclined relative to the radial direction of the inner hole; the second driving part is connected with the base and is configured to drive the base to move along the preset direction. The wet etching device is used for etching a single wafer, and when working, the suction disc first adsorbs the wafer, then the second driving part drives the base to move along the preset direction so that the base is close to the suction disc until the base is sleeved on the outer periphery of the wafer through the inner hole, then the first driving part drives the buffer part to move along the preset direction so that the buffer part is close to the suction disc until the distance between the buffer part and the wafer is a preset distance, finally, an etching liquid supplying part is used to supply etching liquid to the buffer part, and a suction part is used to provide suction force to each suction port and form a rotating wind field, under the action of the suction force, the etching liquid in the buffer part is sucked to the surface of the wafer and forms a liquid film, and then is sucked away from the suction port, so that uniform etching of the wafer is realized, and the problem of uneven etching is avoided, in addition, the wafer does not need to rotate, so the problem of wafer fragments caused by rotation is avoided. BRIEF DESCRIPTION OF DRAWINGS

[0019] The accompanying drawings are used to better understand the present application and do not constitute improper limitations on the present application. Among them:

[0020] Figure 1 is a structure schematic view of the wet etching device provided by the present application according to an embodiment;

[0021] Figure 2 is a structure schematic view of the flow guiding mechanism of the wet etching device provided by the present application according to an embodiment;

[0022] Figure 3 is a schematic view of the flow guiding mechanism of the wet etching device provided by the present application according to an embodiment forming a rotating wind field on the surface of the wafer, and the flow direction of the gas is represented by a red arrow in the drawing.

[0023] [Reference signs are as follows]: 100 - suction cup, 200 - etching liquid application mechanism, 210 - buffer portion, 220 - first driving portion, 300 - drainage mechanism, 310 - base, 311 - inner hole, 312 - suction port, 320 - second driving portion, 330 - suction portion, 340 - control portion, 350 - suction tube, 400 - infusion tube. DETAILED DESCRIPTION

[0024] Other advantages and effects of the present application can be easily understood by those skilled in the art from the contents disclosed in the present specification. The present application can also be implemented or applied in other different specific embodiments, and each detail in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present application. It should be noted that the drawings provided in the present embodiment only schematically illustrate the basic concept of the present application, and thus the drawings only show the components related to the present application rather than the number, shape and size of the components in actual implementation. The shape, number and ratio of each component in actual implementation can be randomly changed, and the layout pattern of the components can also be more complicated.

[0025] In addition, each embodiment of the following description has one or more technical features, but this does not mean that the user of the present application must simultaneously implement all the technical features in any embodiment, or can only separately implement one or all technical features in different embodiments. In other words, under the premise of implementation, those skilled in the art can selectively implement part or all of the technical features in any embodiment, or selectively implement a combination of part or all of the technical features in multiple embodiments, thereby increasing the flexibility of the implementation of the present application.

[0026] As used herein, the singular forms “a,” “an,” and “the” include plural objects, and the plural form “a plurality” includes two or more objects, unless otherwise expressly indicated. As used herein, the term “or” is generally used to include the meaning of “and / or,” unless otherwise expressly indicated, and the terms “install,” “connect,” and “link” should be interpreted broadly, for example, as a fixed connection, a detachable connection, or an integral connection. Connections can be mechanical or electrical. Connections can be direct or indirect through an intermediate medium, and can represent internal communication between two elements or an interaction between two elements. Relational terms such as “first,” “second,” etc., are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations, nor do they indicate relative importance or implicitly specify the number of indicated technical features. Those skilled in the art will understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0027] One of the objectives of this invention is to provide a wet etching apparatus that can be used to etch a single wafer, improve the etching uniformity of the wafer, and reduce the possibility of wafer breakage.

[0028] To make the objectives, advantages, and features of this utility model clearer, the following detailed description is provided in conjunction with the accompanying drawings. It should be noted that the drawings are all in a very simplified form and use non-precise proportions, and are only used to conveniently and clearly illustrate the objectives of the embodiments of this utility model. The same or similar reference numerals in the drawings represent the same or similar parts.

[0029] Figure 1 A schematic diagram of the wet etching apparatus provided in an embodiment of this utility model is shown. Figure 1 As shown, the wet etching apparatus includes a suction cup 100, an etching solution application mechanism 200, and a drainage mechanism 300. The etching solution application mechanism 200 includes a buffer section 210 and a first driving section 220. The buffer section 210 is a porous structure with numerous micropores, and it is arranged at a distance from the suction cup 100 in a predetermined direction. The first driving section 220 is connected to the buffer section 210 and configured to drive the buffer section 210 to move closer to or further away from the suction cup 100 along the predetermined direction. The drainage mechanism 300 includes a substrate 310 and a second driving section 320. The substrate 310 is at least partially located on the side of the buffer section 210 facing the suction cup 100. Figure 2As shown, the substrate 310 is an annular structure with an inner hole 311. A plurality of suction ports 312 are provided on the inner circumference of the substrate 310, and the plurality of suction ports 312 are spaced apart circumferentially along the inner hole 311, for example, at equal intervals. The axial direction of the suction ports 312 is inclined relative to the radial direction of the inner hole 311. The second driving unit 320 is connected to the substrate 310 and is configured to drive the substrate 310 to move along the preset direction to approach or move away from the suction cup 100.

[0030] The wet etching apparatus is used for etching single wafers 10 (e.g., Figure 3 Wet etching is performed (as shown). During operation, the buffer unit 210 is connected to an etching solution supply unit (not shown in the figure), which selectively supplies etching solution to the buffer unit 210 or stops supplying etching solution; each of the suction ports 312 is connected to a suction unit 330, and the suction unit 330 is connected to a control unit 340. An optional etching operation is as follows:

[0031] Step S1: The suction cup 100 adsorbs the wafer 10.

[0032] Step S2: The second driving unit 320 drives the substrate 310 to move along the preset direction, so that the substrate 310 approaches the suction cup 100 until the substrate 310 is fitted onto the outer periphery of the wafer 10 through the inner hole 311.

[0033] Step S3: The first driving unit 220 drives the cache unit 210 to move along the preset direction, so that the cache unit 210 is close to the chuck 100 until the gap between the cache unit 210 and the wafer 10 is a preset distance, such as 1 mm.

[0034] Step S4: The etching solution supply unit supplies etching solution to the buffer unit 210. Simultaneously, the control unit 340 controls the suction unit 330 to open and provides suction force to each suction port 312 to form a rotating airflow field on the surface of the wafer 10 (e.g., ...). Figure 3 (As shown by the red arrow in the image). The rotating airflow draws the etching solution supplied by the etching solution supply unit to the buffer unit 210 onto the surface of the wafer 10 and forms a liquid film to achieve uniform etching of the wafer 10. Then, the etching solution is drawn into the suction port 312 and discharged from the surface of the wafer 10.

[0035] In this process, when the etching solution supply unit supplies the etching solution to the buffer unit 212, the micropores in the buffer unit 210 adsorb and store the etching solution. The adsorbed and stored etching solution is then slowly released onto the surface of the wafer 10 under the suction of the rotating airflow, improving the uniformity of the liquid film formed by the etching solution on the wafer 10 surface. This etching method improves the etching uniformity of the wafer 10. Furthermore, during the use of the wet etching apparatus, the wafer 10 does not need to rotate, avoiding the possibility of the wafer 10 breaking due to rotation. It is understood that after etching is completed, the control unit 340 also controls the suction unit 330 to close, and simultaneously, the etching solution supply unit stops supplying the etching solution to the buffer unit 310. Then, the first driving unit 220 drives the cache unit 210 to move away from the wafer 10 along the preset direction. Next, the second driving unit 320 drives the substrate 310 to move away from the wafer 10 along the preset direction. Finally, the etched wafer 10 is removed from the chuck 100. In practice, the preset direction is vertical, with the cache unit 210 located above the chuck 100 and the substrate 310 at least partially located below the cache unit 210. That is, in step S2, the second driving unit 320 drives the substrate 310 to move vertically downwards, and in step S3, the first driving unit 220 drives the cache unit 210 to move vertically downwards. After etching is complete, the second driving unit 320 drives the substrate 310 to move vertically upwards, and the first driving unit 220 drives the cache unit 210 to move vertically upwards.

[0036] In an optional embodiment, the drainage mechanism 300 further includes the suction section 330 and the control section 340.

[0037] It is worth noting that in step S4, the control unit 340 controls the suction force provided by the suction unit 330 to each suction port 312 according to a preset rule, so as to form a rotating wind field on the surface of the wafer 10.

[0038] The suction unit 330 includes multiple sub-suction units (not shown in the figure), each of which corresponds one-to-one with a plurality of suction ports 312, and each sub-suction unit is connected to its corresponding suction port 312. The control unit 340 is connected to the multiple sub-suction units and controls the opening and closing of each sub-suction unit, and controls the suction force provided by each sub-suction unit to its corresponding suction port 312 according to the preset rules.

[0039] Specifically, the number of suction ports 312 and sub-suction units is n, where n is an integer greater than 1. Each sub-suction unit has n speed settings, each corresponding to a different suction force. When a sub-suction unit is activated, the control unit 340 controls the sub-suction unit to switch between the n speed settings according to the preset rules.

[0040] More specifically, the n positions of the sub-adsorption section are respectively labeled as position 1, position 2, ..., position n-1, and position n, with the suction force of position 1, position 2, ..., position n-1, and position n increasing or decreasing sequentially. The n suction ports 312 are numbered 1, 2, ..., position n-1, and position n along a preset direction, which is either clockwise or counterclockwise. The sub-suction section connected to suction port 1 is designated as the first sub-suction section, the sub-suction section connected to suction port 2 is designated as the second sub-suction section, ..., the sub-suction section connected to suction port n-1 is designated as the (n-1)th sub-suction section, and the sub-suction section connected to suction port n is designated as the nth sub-suction section. At the start of step S4, each sub-suction unit is in an initial position. The initial positions of different sub-suction units are different. The preset rule is as follows: during the execution of step S4, the control unit 340 switches the position of the sub-control unit once every predetermined time interval. Each time the switch is performed, each sub-suction unit switches from the current position to the next position. The current position is recorded as N. i Let the next gear be denoted as N. j Both i and j are integers greater than or equal to 1 and less than or equal to n. When i is less than n, j equals i+1, and when i equals n, j equals 1.

[0041] In a non-limiting embodiment, n is 8, that is, the number of suction ports 312 and the number of gear positions are both 8. That is, along a preset direction, the eight suction ports 312 are numbered 1, 2, 3, 4, 5, 6, 7, and 8, respectively. The sub-suction section connected to suction port 1 is designated as the first sub-suction section, the sub-suction section connected to suction port 2 is designated as the second sub-suction section, the sub-suction section connected to suction port 312 is designated as the third sub-suction section, the sub-suction section connected to suction port 4 is designated as the fourth sub-suction section, the sub-suction section connected to suction port 5 is designated as the fifth sub-suction section, the sub-suction section connected to suction port 6 is designated as the sixth sub-suction section, the sub-suction section connected to suction port 7 is designated as the seventh sub-suction section, and the sub-suction section connected to suction port 8 is designated as the eighth sub-suction section. The eight speed settings of each sub-suction unit are speed 1, speed 2, speed 3, speed 4, speed 5, speed 6, speed 7, and speed 8, with the suction force increasing or decreasing sequentially from speed 1 to speed 8.

[0042] At the start of step S4, the control unit 340 controls the first sub-suction unit to be at level 1, the second sub-suction unit to be at level 2, the third sub-suction unit to be at level 3, the fourth sub-suction unit to be at level 4, the fifth sub-suction unit to be at level 5, the sixth sub-suction unit to be at level 6, the seventh sub-suction unit to be at level 7, and the eighth sub-suction unit to be at level 8. That is, the initial level of the first sub-suction unit is level 1, the initial level of the second sub-suction unit is level 2, the initial level of the third sub-suction unit is level 3, the initial level of the fourth sub-suction unit is level 4, the initial level of the fifth sub-suction unit is level 5, the initial level of the sixth sub-suction unit is level 6, the initial level of the seventh sub-suction unit is level 7, and the initial level of the eighth sub-suction unit is level 8. After a predetermined duration, the control unit 340 controls the first sub-suction unit to change its gear to level 2, the second sub-suction unit to level 3, the third sub-suction unit to level 4, the fourth sub-suction unit to level 5, the fifth sub-suction unit to level 6, the sixth sub-suction unit to level 7, the seventh sub-suction unit to level 8, and the eighth sub-suction unit to level 1. After another predetermined period of time, the control unit 340 controls the first sub-suction unit to change its gear to level 3, the second sub-suction unit to level 4, the third sub-suction unit to level 5, the fourth sub-suction unit to level 6, the fifth sub-suction unit to level 7, the sixth sub-suction unit to level 8, the seventh sub-suction unit to level 1, the eighth sub-suction unit to level 2, and so on, until step S4 ends.

[0043] It should be understood that the number of n is not limited to 8; it can also be 9, 10, or any other suitable number. Generally, n is greater than or equal to 8.

[0044] Optionally, the second drive unit 320 is a robotic arm, and each of the sub-suction units is connected to the corresponding suction port 312 via a suction tube 350, which may be at least partially disposed on the second drive unit 320.

[0045] The cross-sectional shape and size of the inner hole 311 and the cache portion 210 are adapted to the shape and size of the wafer 10. Specifically, when the wafer 10 is 6 inches, the cross-sectional shape of the inner hole 211 and the cache portion 210 is circular to fit the 6-inch wafer 10; when the wafer 10 is 8 inches, the cross-sectional shape of the inner hole 211 and the cache portion 210 is circular to fit the 8-inch wafer 10; and when the wafer 10 is 12 inches, the cross-sectional shape of the inner hole 211 and the cache portion 210 is circular to fit the 12-inch wafer 10. Furthermore, when step S3 is completed, the wafer 10, the cache portion 210, and the inner hole 311 are coaxial.

[0046] This embodiment of the invention does not impose any particular limitation on the material of the buffer section 210, as long as it has a porous structure capable of adsorbing and storing the etching solution and does not react with the etching solution. In optional examples, the buffer section 210 is made of a porous ceramic material, or it is made of a polymer material. Optional polymer materials include, for example, perfluoroalkoxy vinyl ether copolymers, and also polytetrafluoroethylene (PTFE).

[0047] Optionally, the wet etching apparatus further includes the etching solution supply unit. The first drive unit 220 may be a robotic arm. The etching solution supply unit is connected via a tubing 400 (e.g., Figure 1 (As shown) is connected to the buffer unit 210, and the infusion tube 400 may be partially disposed on the first drive unit 220.

[0048] Optionally, the wet etching apparatus further includes a recovery mechanism (not shown in the figure), which is connected to the suction unit 330 and is used to recover the etching solution sucked out by the suction unit 330 from the surface of the wafer 10.

[0049] The second objective of this utility model is to provide a wet etching machine, which includes the wet etching apparatus as described above.

[0050] While the present invention has been disclosed above, it is not limited thereto. Those skilled in the art can make various modifications and variations to the present invention without departing from its spirit and scope. Therefore, if such modifications and variations fall within the scope of the claims of the present invention and their equivalents, the present invention also intends to include such modifications and variations.

Claims

1. A wet etching apparatus, characterized in that, include: Suction cup; An etching fluid application mechanism includes a buffer section and a first driving section. The buffer section has a porous structure and is spaced apart from the suction cup in a preset direction. The first driving section is connected to the buffer section and is configured to drive the buffer section to move along the preset direction. The drainage mechanism includes a base and a second driving part; the base is at least partially located on the side of the buffer part facing the suction cup, the base is an annular structure with an inner hole, and a plurality of suction ports are provided on the inner circumference of the base, the plurality of suction ports are spaced apart circumferentially along the inner hole, and the axial direction of the suction ports is inclined relative to the radial direction of the inner hole; the second driving part is connected to the base and is configured to drive the base to move along the preset direction.

2. The wet etching apparatus according to claim 1, characterized in that, The drainage mechanism further includes a suction section and a control section. The suction section is connected to a plurality of suction ports respectively. The control section is connected to the suction section and is configured to control the opening and closing of the suction section and to control the suction force provided by the suction section to each of the suction ports.

3. The wet etching apparatus according to claim 2, characterized in that, The suction unit includes multiple sub-suction units, each of which is connected to a suction port; the control unit is configured to control the opening and closing of each of the sub-suction units and to control the suction force provided by each of the sub-suction units to the corresponding suction port.

4. The wet etching apparatus according to claim 3, characterized in that, The number of suction ports and the number of sub-suction units are both n, and each sub-suction unit has n gears, with different suction forces corresponding to different gears; the control unit is configured to control each sub-suction unit to switch between n gears when each sub-suction unit is turned on, where n is an integer greater than 1.

5. The wet etching apparatus according to any one of claims 1-4, characterized in that, The number of suction ports is greater than or equal to 8.

6. The wet etching apparatus according to claim 2, characterized in that, The wet etching apparatus also includes a recovery mechanism, which is connected to the suction unit.

7. The wet etching apparatus according to claim 1, characterized in that, The buffer section is made of porous ceramic or polymer materials.

8. The wet etching apparatus according to claim 7, characterized in that, The polymeric material includes perfluoroalkoxy vinyl ether copolymers or polytetrafluoroethylene.

9. The wet etching apparatus according to claim 1, characterized in that, The wet etching apparatus further includes an etching solution supply unit, which is connected to the buffer unit.

10. A wet etching machine, characterized in that, Includes the wet etching apparatus as described in any one of claims 1-9.