Wafer carrier for semiconductor devices

Abstract

The utility model discloses a kind of wafer bearing devices for semiconductor equipment, it is related to the field of semiconductor wafer, including fixed seat and the wafer chuck made of composite material, the wafer chuck is equipped with air hole for connecting vacuum tube, annular vacuum groove on chuck surface and communicating air passage in disc inside, a plurality of vacuum suction grooves are arranged along the annular array of vacuum suction hole, the communicating groove is communicated with the vacuum suction hole and the vacuum suction groove, the lower of the disc is equipped with connecting column, the connecting column is connected with the fixed seat, effectively isolate ground vibration, while can prevent the edge of brittle wafer fragmentation, Z direction shock absorption fine adjustment structure can absorb mechanical vibration energy by the viscous resistance between gas molecules, avoid micron level deviation when wafer alignment or exposure, the wafer bearing device for semiconductor equipment disclosed in the utility model has the advantages of accurate positioning and shockproof, and the design of high cleanliness and high flatness helps wafer factory to be polluted on this device.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor wafer technology, specifically a wafer carrier device for semiconductor equipment. Background Technology

[0002] A wafer is a silicon wafer used to fabricate silicon semiconductor circuits; its raw material is silicon. High-purity polycrystalline silicon is dissolved, doped with silicon crystal seeds, and then slowly pulled out to form cylindrical single-crystal silicon. After grinding, polishing, and slicing, the silicon ingot forms a silicon wafer. Domestic wafer production lines mainly use 8-inch and 12-inch wafers. The main wafer processing methods are wafer fabrication and batch processing, which involves processing one or more wafers simultaneously. As semiconductor feature sizes shrink and processing and measurement equipment becomes more advanced, new data characteristics have emerged in wafer processing. Simultaneously, the reduction in feature size increases the impact of airborne particles on the quality and reliability of the processed wafer, and with improved cleanliness, new data characteristics regarding particle count have also emerged.

[0003] Currently, semiconductor wafer structures are supported by fixed support structures during the handling process. This lack of cushioning and shock absorption affects the stability of the wafer during use. Furthermore, placing the wafer directly onto the platform can cause sliding and tilting displacement, which affects subsequent processing operations. Utility Model Content

[0004] The purpose of this invention is to provide a wafer carrier device for semiconductor equipment, in order to solve the problems mentioned in the background art, that the current semiconductor wafer structure is carried out by a fixed support structure, which does not have a buffering and shock absorption effect, thus affecting the stability of the wafer carrier and causing sliding and skew displacement when the wafer is placed directly on the platform, affecting subsequent processing operations.

[0005] To achieve the above objectives, this utility model provides the following technical solution: A wafer carrier for semiconductor equipment includes a vacuum adsorption platform, a base, and a Z-direction vibration damping and fine-tuning structure. Air damping is uniformly distributed on the top surface of the base, and air damping sleeves are uniformly fixedly connected to the top surface of the base. Positioning holes are uniformly formed on the top surface of the air damping sleeves. An annular vacuum groove is uniformly formed on the top surface of the vacuum adsorption platform, as are vacuum through holes and radial through grooves. Positioning holes are uniformly formed on the top surface of the vacuum adsorption platform, and positioning holes are uniformly formed on the top surface of the base.

[0006] In a preferred embodiment of this invention: the upper surface of the vacuum adsorption platform has multiple annular vacuum grooves and radial conductive grooves; the annular vacuum grooves help the vacuum adsorption platform to uniformly adsorb the wafer, forming a uniform negative pressure area on the back of the wafer, ensuring flat adsorption of the wafer, and avoiding local warping and displacement, which is crucial for ultra-thin wafers. Simultaneously, particles generated during the process may fall into the grooves, reducing wafer contamination. Therefore, this device has the advantages of high flatness and high cleanliness; the radial conductive grooves can directionally deliver vacuum from the air inlet at the center or edge of the suction cup to the back of the wafer, ensuring uniform gas diffusion throughout the entire area and avoiding uneven local concentration.

[0007] As a preferred embodiment of the present invention: the vacuum adsorption platform contains a vacuum through hole, which is a key channel connecting the surface of the suction cup to the external vacuum system. Its function is to transfer the negative pressure generated by the external vacuum pump to the surface of the suction cup. The suction cup adopts a stepped aperture to balance the airflow speed and adsorption stability.

[0008] As a preferred embodiment of this utility model: the vacuum adsorption platform has three positioning holes evenly distributed on the vacuum adsorption platform, and the positioning holes have the characteristics of high precision; the three positioning holes are directly connected to the Z-direction shock absorption fine adjustment structure.

[0009] In a preferred embodiment of this invention, three identical Z-axis vibration damping and fine-tuning sub-mechanisms are included. These are primarily used for rapid positioning, stable alignment, and dynamic compensation, ensuring the positional accuracy and stability of the wafer during processing, inspection, or transport. The Z-axis vibration damping and fine-tuning structure absorbs vibration energy through compression / expansion in a sealed gas chamber, achieving a natural frequency as low as below 1Hz. This effectively isolates ground vibrations and prevents brittle wafer edge breakage. Semiconductor metrology equipment is extremely sensitive to vibration. The Z-axis vibration damping and fine-tuning structure absorbs mechanical vibration energy through the viscous resistance between gas molecules, preventing micron-level misalignment during wafer alignment or exposure.

[0010] As a preferred embodiment of this utility model: the Z-direction damping fine-tuning sub-mechanism includes an air damper and an air damping buckle; the air damper is fixed, the air damping buckle is movable, and there is a sealing edge layer at the contact point of the two mechanisms to prevent gas leakage and enhance the damping effect; when the mechanism is in use, the movable air damping buckle squeezes the gas in the gap when it moves, generating reverse pressure and forming damping force.

[0011] In a preferred embodiment of this invention, three positioning holes are distributed on the air damper, and these holes are characterized by high precision. The three positioning holes are directly connected to the base, which is made of high-rigidity metal, maximizing the dissipation of vibration energy by the Z-direction damping fine-tuning mechanism. Simultaneously, it isolates ground vibration and internal vibration, greatly improving the overall system stability, vibration suppression effect, and service life.

[0012] Compared with the prior art, the beneficial effects of this utility model are: This invention features multiple annular vacuum grooves and radial conductive grooves on the surface of a vacuum adsorption platform. The annular vacuum grooves help the platform uniformly adsorb wafers, creating a uniform negative pressure area on the back of the wafer. This ensures flat adsorption of the wafer, preventing local warping and displacement, which is crucial for ultra-thin wafers. Simultaneously, particles generated during the process may fall into the grooves, reducing wafer contamination. Therefore, this device offers advantages in high flatness and high cleanliness. The radial conductive grooves directionally deliver vacuum from the air inlet at the center or edge of the suction cup to the back of the wafer, ensuring uniform gas diffusion throughout the area and avoiding uneven local concentration. Three identical Z-direction vibration damping and fine-tuning sub-mechanisms are included. These are primarily used for rapid positioning, stable docking, and dynamic compensation, ensuring the positional accuracy and stability of the wafer during processing, inspection, or transport. The Z-direction vibration damping and fine-tuning structure absorbs vibration energy through compression / expansion in a sealed air chamber, with a natural frequency as low as below 1Hz, effectively isolating ground vibrations and preventing brittle wafer edge breakage. Semiconductor metrology equipment is extremely sensitive to vibration. The Z-direction damping and fine-tuning structure can absorb mechanical vibration energy through the viscous resistance between gas molecules, avoiding micron-level misalignment during wafer alignment or exposure. Attached Figure Description

[0013] Other features, objects, and advantages of this invention will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings: Figure 1 A schematic diagram of the overall structure of a three-dimensional splicing and mounting device for a semiconductor equipment wafer carrier; Figure 2 A top view of the connection details of a vacuum adsorption platform for a wafer carrier device for semiconductor equipment; Figure 3 A schematic diagram showing the three-dimensional connection details of a vacuum adsorption platform for a wafer carrier device in semiconductor equipment; Figure 4 This is a schematic diagram showing the structural details of the three-dimensional connection of a wafer carrier device for semiconductor equipment.

[0014] In the figure: 1. Annular vacuum groove; 2. Vacuum through hole; 3. Radial through groove; 4. Positioning hole; 5. Air damping sleeve; 6. Air damping; 7. Base; 8. Positioning hole on air damping; 9. Positioning hole on base; 10. Vacuum adsorption platform. Detailed Implementation

[0015] Please see Figure 1-4In this embodiment of the invention, a wafer carrier device for semiconductor equipment includes a vacuum adsorption platform 10, a base 7, and a Z-direction vibration damping and fine-tuning structure. The vacuum adsorption platform 10 and the Z-direction vibration damping and fine-tuning structure are fixedly connected along the Z-direction, and the Z-direction vibration damping and fine-tuning structure and the base 7 are also fixedly connected along the Z-direction. The base 7 and the vacuum adsorption platform 10 are arranged in a stacked configuration. The upper surface of the vacuum adsorption platform has multiple annular vacuum grooves and radial conductive grooves. The annular vacuum grooves help the vacuum adsorption platform to uniformly adsorb the wafer, forming a uniform negative pressure area on the back of the wafer, ensuring flat adsorption of the wafer, and avoiding local warping and displacement, which is crucial for ultra-thin wafers. Simultaneously, particles generated during the process may fall into the grooves, reducing wafer contamination. Therefore, this device has the advantages of high flatness and high cleanliness; the radial guide groove can directionally deliver vacuum from the air inlet at the center or edge of the suction cup to the back side of the wafer, ensuring that the gas diffuses evenly throughout the entire area and avoiding local uneven concentration. Air dampers 6 are uniformly arranged on the top surface of the base 7. The Z-direction damping fine-tuning structure includes air damping sleeves 5 and air dampers 6. The air damping sleeves 5 are uniformly and fixedly connected to the top surface of the base 7 near the edge. There are three air dampers 6, and the three air dampers 6 are arranged in parallel with each other. The three air dampers 6 are arranged in a ring at equal intervals on the top surface of the base 7. Near the edge, the bottom ends of three air dampers 6 are fixedly connected to the top surface of the air damper sleeves 5. Air damper sleeves 5 are uniformly fixedly connected to the top surface of the base 7, with the number of sleeves matching the number of dampers 6. The air damper sleeves 5 are arranged in a ring at equal intervals near the edge of the top surface of the base 7. Positioning holes 8 on the air dampers are also arranged in a ring at equal intervals near the edge of the top surface of the air damper sleeves 5, and are fixedly connected to the top surface of the base 7 by bolts. Three identical Z-direction vibration damping fine-tuning sub-mechanisms are also present. These are primarily used for rapid positioning, stable docking, and dynamic compensation, ensuring the positional accuracy and stability of the wafer during processing, inspection, or transport. The Z-direction vibration damping fine-tuning structure absorbs vibration energy through compression / expansion in a sealed air chamber, achieving a natural frequency as low as below 1Hz, effectively isolating ground vibrations and preventing the brittle wafer edge from fracturing. Semiconductor metrology equipment is extremely sensitive to vibration.The Z-direction damping micro-adjustment structure absorbs mechanical vibration energy through the viscous resistance between gas molecules, preventing micron-level misalignment during wafer alignment or exposure. Air damping is fixed, while the air damping sleeve moves. A sealing edge layer at the contact point between the two mechanisms prevents gas leakage and enhances the damping effect. During use, the movable air damping sleeve compresses the gas in the gap, generating reverse pressure and forming damping force. The vacuum through-hole 2 is a crucial channel connecting the suction cup surface to the external vacuum system. Positioning holes 8 are evenly distributed on the top surface of the air damping sleeve 5. Annular vacuum grooves 1 are evenly distributed on the top surface of the vacuum adsorption platform 10. Vacuum through-holes 2 and radial through-grooves 3 are also evenly distributed on the top surface of the vacuum adsorption platform 10. The vacuum adsorption platform contains vacuum through-holes, which are crucial channels connecting the suction cup surface to the external vacuum system. The function is to transfer the negative pressure generated by the external vacuum pump to the surface of the suction cup. The suction cup adopts a stepped aperture to balance the airflow speed and adsorption stability. The top surface of the vacuum adsorption platform 10 is evenly provided with positioning holes 4. The positioning holes 4 are evenly distributed on the top surface of the vacuum adsorption platform, and there are three positioning holes 4 evenly distributed. The positioning holes 4 have the characteristics of high precision. The three positioning holes 4 are directly connected to the Z-direction damping fine adjustment structure. The vacuum adsorption platform has three positioning holes evenly distributed on the vacuum adsorption platform. The positioning holes have the characteristics of high precision. The three positioning holes are directly connected to the Z-direction damping fine adjustment structure. The top surface of the base 7 is evenly provided with positioning holes 9. The base 7 is made of high-rigidity metal, which can help the Z-direction damping fine adjustment sub-mechanism to dissipate vibration energy to the greatest extent. At the same time, it isolates ground vibration and internal vibration, which greatly improves the stability of the overall system, vibration suppression effect and service life.

[0016] The working principle of this utility model is as follows: The vacuum adsorption platform 1 has multiple annular vacuum grooves and radial conductive grooves on its upper surface. The annular vacuum grooves help the vacuum adsorption platform to uniformly adsorb wafers, forming a uniform negative pressure area on the back of the wafer. This ensures flat adsorption of the wafer, avoiding local warping and displacement, which is crucial for ultra-thin wafers. Simultaneously, particles generated during the process may fall into the grooves, reducing wafer contamination. Therefore, this device has the advantages of high flatness and high cleanliness. The radial conductive grooves can directionally deliver vacuum from the air inlet at the center or edge of the suction cup to the back of the wafer, ensuring uniform gas diffusion throughout the entire area and avoiding uneven local concentration. Three identical Z-direction vibration damping and fine-tuning sub-mechanisms are mainly used for rapid positioning, stable docking, and dynamic compensation, ensuring the positional accuracy and stability of the wafer during processing, inspection, or transport. The Z-direction vibration damping and fine-tuning structure absorbs vibration energy through compression / expansion in a sealed air chamber, with a natural frequency as low as below 1Hz, effectively isolating ground vibrations and preventing brittle wafer edge breakage. Semiconductor metrology equipment is extremely sensitive to vibration. The Z-direction damping and fine-tuning structure can absorb mechanical vibration energy through the viscous resistance between gas molecules, avoiding micron-level misalignment during wafer alignment or exposure.

[0017] The above description is only a preferred embodiment of the present utility model, but the protection scope of the present utility model is not limited thereto. Any equivalent substitutions or changes made by those skilled in the art within the technical scope disclosed in the present utility model, based on the technical solution and the inventive concept of the present utility model, should be included within the protection scope of the present utility model.

Claims

1. A wafer carrier device for semiconductor equipment, comprising a vacuum adsorption platform (10), a base (7), and a Z-direction vibration damping and fine-tuning structure, characterized in that, The top surface of the base (7) is uniformly provided with air damping (6), and the top surface of the base (7) is uniformly fixedly connected with air damping sleeves (5). The top surface of the air damping sleeves (5) is uniformly provided with air damping upper positioning holes (8). The top surface of the vacuum adsorption platform (10) is uniformly provided with annular vacuum grooves (1), the top surface of the vacuum adsorption platform (10) is uniformly provided with vacuum conduction holes (2), the top surface of the vacuum adsorption platform (10) is uniformly provided with radial conduction grooves (3), the top surface of the vacuum adsorption platform (10) is uniformly provided with positioning holes (4), and the top surface of the base (7) is uniformly provided with base upper positioning holes (9).

2. The wafer carrier device for semiconductor equipment according to claim 1, characterized in that, The vacuum adsorption platform (10) and the Z-direction damping and fine-tuning structure are fixedly connected along the Z-direction, and the Z-direction damping and fine-tuning structure and the base (7) are fixedly connected along the Z-direction.

3. The wafer carrier device for semiconductor equipment according to claim 1, characterized in that, The Z-direction damping fine-tuning structure includes an air damping sleeve (5) and an air damper (6). The air damping sleeve (5) is uniformly and fixedly connected to the top surface of the base (7) near the edge. There are three air dampers (6), and the three air dampers (6) are arranged in parallel with each other. The three air dampers (6) are arranged in a ring at equal intervals near the edge of the top surface of the base (7). The bottom ends of the three air dampers (6) are fixedly connected to the top surface of the air damping sleeve (5).

4. A wafer carrier device for semiconductor equipment according to claim 1, characterized in that, The number of air damping buckles (5) is consistent with the number of air dampers (6), and the air damping buckles (5) are arranged in a ring at equal intervals on the top surface of the base (7) near the edge. The positioning holes (8) on the air dampers are arranged in a ring at equal intervals on the top surface of the air damping buckles (5), and the positioning holes (8) on the air dampers are fixedly connected to the top surface of the base (7) by plug-in bolts. The vacuum through hole (2) is the key channel connecting the suction cup surface and the external vacuum system.

5. A wafer carrier device for semiconductor equipment according to claim 1, characterized in that, The positioning holes (4) are evenly distributed on the top surface of the vacuum adsorption platform, and the number of positioning holes (4) is three evenly distributed. The positioning holes (4) have the characteristics of high precision. The three positioning holes (4) are directly connected to the Z-direction damping and fine-tuning structure.

6. A wafer carrier device for semiconductor equipment according to claim 1, characterized in that, The base (7) and the vacuum adsorption platform (10) are arranged in a superimposed manner.

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