A manually operated cleaving platform for gallium arsenide epitaxial wafers

CN224796044UActive Publication Date: 2026-09-25WUHAN QIANMU LASER CO LTD
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Patent Information

Application Number
CN202521921730.5
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-09-08
Publication Date
2026-09-25
Estimated Expiration
2035-09-08

AI Technical Summary

Technical Problem

[0002]目前市场上大尺寸的GaAs衬底4英寸以上都为高精度机械加工衬底,很少有自然解理边的衬底,要么就是大尺寸的自然解理边衬底价格非常高昂,一定程度上增加了半导体企业的运营成本

Benefits of technology

[0014]1、本实用新型通过设置吸附载盘和吸附孔,配合外部真空吸附机,能够将砷化镓外延片牢牢固定在操作台上,防止在划裂过程中外延片发生移动,保证划裂位置的准确性。

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Abstract

The utility model discloses a manual split gallium arsenide epitaxial wafer platform belongs to the technical field of semiconductor material processing equipment, the platform includes workstation, and the workstation is installed with operation platform, and the operation platform is equipped with the adsorption tray and manual split device for fixing gallium arsenide epitaxial wafer, and split device is by opposite setting's limit post, fixed block, the movable plate of sliding installation on limit post and the movable block of adjustable movable plate component, and the movable block is installed with diamond pen. The adsorption tray is fixed epitaxial wafer through vacuum adsorption, and movable plate and movable block can be flexible adjustment diamond pen position, realize accurate split.
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Description

Technical Field

[0001] This utility model relates to the field of semiconductor processing equipment technology, specifically to a manual gallium arsenide epitaxial wafer cleaving platform. Background Technology

[0002] Currently, most large GaAs substrates on the market, those 4 inches and above, are high-precision machined substrates. Naturally cleaved edges are rare, and large-size substrates with natural cleaved edges are either extremely expensive, increasing the operating costs for semiconductor companies. Naturally cleaved edges offer maximum convenience for photolithography reference alignment, effectively solving technical challenges in the photolithography overlay process.

[0003] How to effectively create smooth and flat cleavage surfaces on crystal cleavage planes is a common technical challenge faced by many companies that manufacture and develop edge-emitting lasers. Utility Model Content

[0004] This invention aims to solve the above-mentioned technical problems by providing a platform for manually cleaving gallium arsenide epitaxial wafers.

[0005] To solve the above-mentioned technical problems, the technical solution provided by this utility model is as follows:

[0006] A manual gallium arsenide epitaxial wafer slicing platform includes a workbench with an operating table for fixing the gallium arsenide epitaxial wafer. A slicing device for manually slicing the gallium arsenide epitaxial wafer is mounted on the operating table. The slicing device includes opposing limiting posts and fixing blocks installed at the four corners of the operating table to fix the limiting posts. Movable plates are slidably mounted on the outer sides of the two limiting posts. An adjustable connecting movable block is mounted on one side of the movable plate, and a diamond pen is mounted on the movable block.

[0007] As a further embodiment of this utility model: the fixing block includes L-shaped connecting blocks arranged opposite each other, and limit rings are installed at both ends of the limiting post. Grooves for locking the limit rings are opened on the opposite surfaces of the two L-shaped connecting blocks.

[0008] As a further improvement of this utility model: multiple sets of first mounting holes are provided on the workbench, and second mounting holes are provided on both the L-shaped connecting block and the operating table. The L-shaped connecting block and the operating table are fixedly connected to the workbench by bolt groups.

[0009] As a further embodiment of this utility model: an adsorption carrier plate with an internal cavity is installed on the operating table, and multiple sets of adsorption holes for vacuum adsorption of gallium arsenide epitaxial wafers are opened on the adsorption carrier plate. The adsorption holes are connected to the adsorption carrier plate, and the adsorption carrier plate is connected to an external vacuum adsorption machine.

[0010] As a further improvement of this utility model, a sliding groove is provided on the movable plate to cooperate with the two limiting posts.

[0011] As a further embodiment of this utility model: a fixed plate is installed opposite to one side of the movable plate, and the movable block includes a U-shaped clamping block for mounting a diamond pen and a mounting block on one side of the U-shaped clamping block. The mounting block has a mounting groove for use with the fixed plate, and the two fixed plates and the mounting block are fixedly connected by a bolt group.

[0012] As a further improvement of this utility model, the U-shaped clamping block clamps the diamond pen with a bolt group.

[0013] With the above structure, this utility model has the following advantages:

[0014] 1. This utility model, by setting up an adsorption carrier and adsorption holes, and in conjunction with an external vacuum adsorption machine, can firmly fix gallium arsenide epitaxial wafers on the operating table, preventing the epitaxial wafers from moving during the scratching process and ensuring the accuracy of the scratching position.

[0015] 2. The movable plate in the cleaving device can slide along the limiting post, and the movable block can be adjusted on the movable plate, so that the position of the diamond pen can be flexibly adjusted as needed, accurately determining the position to be cleaved, and quickly drawing an optical straight line at that position.

[0016] 3. By applying external force at the cut position of the gallium arsenide epitaxial wafer, the stress between the epitaxial wafer lattices is released, resulting in a smooth cleavage surface, which provides an effective reference for subsequent photolithography alignment in the yellow region.

[0017] 4. Compared to purchasing from professional dicing equipment, this platform is more economical and can reduce the operating costs of semiconductor companies.

[0018] The above overview is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments, and features described above, further aspects, embodiments, and features of the present invention will become readily apparent from the accompanying drawings and the following detailed description. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a schematic diagram of the structure of this utility model.

[0021] Figure 2 This is an exploded view of this utility model.

[0022] As shown in the figure: 1. Workbench; 2. Operating table; 3. Scraping device; 301. Limiting post; 302. Fixing block; 303. Movable plate; 304. Movable block; 5. Diamond pen; 6. L-shaped connecting block; 7. Limiting ring; 8. Groove; 9. First mounting hole; 10. Second mounting hole; 11. Adsorption carrier plate; 12. Adsorption hole; 13. Fixing plate; 14. Mounting block; 15. Mounting groove; 16. U-shaped clamping block. Detailed Implementation

[0023] The embodiments of this application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0024] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0025] The present invention will now be described in further detail in conjunction with the full text.

[0026] Combined with appendix Figure 1 and Figure 2 A manual gallium arsenide epitaxial wafer slicing platform includes a workbench 1, an operating table 2 for fixing the gallium arsenide epitaxial wafer is mounted on the workbench 1, a slicing device 3 for manually slicing the gallium arsenide epitaxial wafer is mounted on the operating table 2, the slicing device 3 includes limiting posts 301 arranged opposite each other and fixing blocks 302 installed at the four corners of the operating table 2 and fixing the limiting posts 301, movable plates 303 are slidably mounted on the outer sides of the two limiting posts 301, an adjustable connecting movable block 304 is mounted on one side of the movable plate 303, and a diamond pen 5 is mounted on the movable block 304.

[0027] In a specific implementation of this utility model, the fixing block 302 includes L-shaped connecting blocks 6 arranged opposite each other, and limiting rings 7 are installed at both ends of the limiting post 301. The opposite surfaces of the two L-shaped connecting blocks 6 are provided with grooves 8 for locking the limiting rings 7. By locking the limiting rings 7 with the grooves 8, the limiting post 301 can be stably fixed on the L-shaped connecting block 6, ensuring that the limiting post 301 will not shake during operation.

[0028] In a specific implementation of this utility model, the workbench 1 has multiple sets of first mounting holes 9, and the L-shaped connecting block 6 and the operating table 2 both have second mounting holes 10. The L-shaped connecting block 6 and the operating table 2 are fixedly connected to the workbench 1 by bolts. By cooperating with the first mounting holes 9 and the second mounting holes 10 at different positions, the positions of the operating table 2 and the L-shaped connecting block 6 on the workbench 1 can be adjusted, thereby improving the applicability of the platform.

[0029] In a specific implementation of this invention, an adsorption carrier plate 11 with an internal cavity is installed on the operating table 2. The adsorption carrier plate 11 has multiple sets of adsorption holes 12 for vacuum adsorption of gallium arsenide epitaxial wafers. The adsorption holes 12 are connected to the adsorption carrier plate 11, and the adsorption carrier plate 11 is connected to an external vacuum adsorption machine. Specifically, the vacuum adsorption machine is existing technology and can be purchased directly, so it will not be described in detail again. When the external vacuum adsorption machine is working, the gallium arsenide epitaxial wafer is adsorbed onto the adsorption carrier plate 11 through the adsorption holes 12, thereby fixing the gallium arsenide epitaxial wafer.

[0030] In a specific implementation of this utility model, a sliding groove is provided on the movable plate 303 to cooperate with the two limiting posts 301. The movable plate 303 slides along the limiting posts 301 through the sliding groove, which facilitates pushing the diamond pen 5 to a horizontal position, thereby scratching the gallium arsenide epitaxial wafer.

[0031] A fixed plate 13 is installed opposite to one side of the movable plate 303. The movable block 304 includes a U-shaped clamping block 16 for mounting the diamond pen 5 and a mounting block 14 on one side of the U-shaped clamping block 16. The mounting block 14 has a mounting groove 15 for use with the fixed plate 13. The two fixed plates 13 and the mounting block 14 are fixedly connected by a bolt group. By adjusting the position of the mounting block 14 on the fixed plate 13, the height and lateral position of the diamond pen 5 can be adjusted. The U-shaped clamping block 16 clamps the diamond pen 5 with the bolt group, which is convenient for replacing different models of diamond pens 5.

[0032] Compared with the prior art, the present invention has the following significant advantages:

[0033] 1. Improved cleavage surface quality: The cleaving structure, which is fixed by vacuum adsorption and rigidly limited, ensures that the diamond pen cuts along the preset trajectory, so that the lattice stress of the epitaxial wafer is released in an oriented manner along the cut. The roughness of the cleavage surface can be controlled within 0.5μm, which meets the alignment accuracy requirements of the photolithography process.

[0034] 2. Significant cost advantages: The equipment has low manufacturing costs and does not require a complex electrical control system, reducing maintenance costs by more than 60%, which greatly alleviates the equipment investment pressure on small and medium-sized enterprises.

[0035] 3. High operational flexibility: With multiple sets of mounting holes and adjustable movable blocks, it can be adapted to gallium arsenide epitaxial wafers of different specifications from 4 to 6 inches. The adjustment process does not require professional tools and can be completed by a single person, improving processing efficiency.

[0036] The working principle of this utility model is as follows: In use, the gallium arsenide epitaxial wafer is placed on the adsorption carrier 11, and the external vacuum adsorption machine is started. The epitaxial wafer is firmly adsorbed and fixed through the adsorption holes 12. The gallium arsenide epitaxial wafer is placed on the surface of the adsorption carrier 11, and the external vacuum adsorption machine is started. Negative pressure is formed through the adsorption holes 12, causing the epitaxial wafer to adhere tightly to the carrier surface, ensuring no loosening. Depending on the required cleavage position, the sliding movable plate 303 is adjusted to its position on the limiting post 301. Simultaneously, the position of the adjusting movable block 304 on the fixed plate 13 is adjusted to determine the height and lateral position of the diamond pen 5. After the position is determined, the diamond pen 5 is manually pressed to make contact with the gallium arsenide epitaxial wafer. It is then pulled downwards horizontally to make a cut of a certain depth on the gallium arsenide epitaxial wafer. Then, an external force is applied near the cut, and the stress is released along the cut to the cleavage surface, resulting in a smooth and flat cleavage surface. Slide the movable plate 303 to the preset cleaving position, adjust the height of the movable block 304 so that the diamond pen 5 contacts the surface of the epitaxial sheet, manually pull the movable plate 303 at a constant speed along the direction of the limiting post 301 to make a cut with a depth of 0.1-0.3mm on the surface; then apply a force perpendicular to the cleavage plane at the edge of the cut so that the epitaxial sheet naturally cleaves along the cut.

[0037] The present invention and its embodiments have been described above. This description is not restrictive, and the embodiments shown throughout the text are only one of the embodiments of the present invention. The actual structure is not limited to this. In conclusion, if a person skilled in the art is inspired by this description and designs a similar structure and embodiment without departing from the inventive spirit of the present invention, such design should fall within the protection scope of the present invention.

Claims

1. A platform for manually cleaving gallium arsenide epitaxial wafers, characterized in that, Includes a workbench (1), on which an operating table (2) for fixing gallium arsenide epitaxial wafers is mounted; The operating table (2) is equipped with a manual cleaving device (3) for cleaving gallium arsenide epitaxial wafers; The slicing device (3) includes opposing limiting posts (301) and fixing blocks (302) installed at the four corners of the operating table (2) and fixing the limiting posts (4). Movable plates (303) are slidably installed on the outer sides of the two limiting posts (301). An adjustable connecting movable block (304) is installed on one side of the movable plate (303). A diamond pen (5) is installed on the movable block (304).

2. The manual gallium arsenide epitaxial wafer cleaving platform according to claim 1, characterized in that: The fixing block (302) includes L-shaped connecting blocks (6) arranged opposite to each other. Both ends of the limiting post (301) are equipped with limiting rings (7). The opposite surfaces of the two L-shaped connecting blocks (6) are provided with grooves (8) to hold the limiting rings (7).

3. The manual gallium arsenide epitaxial wafer cleaving platform according to claim 2, characterized in that: The workbench (1) has multiple sets of first mounting holes (9), and the L-shaped connecting block (6) and the operating table (2) are both provided with second mounting holes (10). The L-shaped connecting block (6) and the operating table (2) are fixedly connected to the workbench (1) by bolts.

4. The manual gallium arsenide epitaxial wafer cleaving platform according to claim 1, characterized in that: The operating table (2) is equipped with an adsorption carrier plate (11) with an internal cavity. Multiple sets of adsorption holes (12) for vacuum adsorption of gallium arsenide epitaxial wafers are opened on the adsorption carrier plate (11), and the adsorption holes (12) are connected to the cavity of the adsorption carrier plate (11). The cavity of the adsorption carrier plate (11) is connected to an external vacuum adsorption machine.

5. The manual gallium arsenide epitaxial wafer cleaving platform according to claim 1, characterized in that: The movable plate (303) has a groove for use with two limiting posts (301).

6. The manual gallium arsenide epitaxial wafer cleaving platform according to claim 1, characterized in that: A fixed plate (13) is installed opposite to one side of the movable plate (303). The movable block (304) includes a U-shaped clamping block (16) for mounting a diamond pen (5) and a mounting block (14) on one side of the U-shaped clamping block (16). The mounting block (14) has a mounting groove (15) for use with the fixed plate (13). The two fixed plates (13) and the mounting block (14) are fixedly connected by a bolt group.

7. The manual gallium arsenide epitaxial wafer cleaving platform according to claim 6, characterized in that: The U-shaped clamp (16) clamps the diamond pen (5) with a bolt group.