A furnace tube arrangement and semiconductor processing apparatus

Abstract

The utility model provides a kind of furnace tube device and semiconductor processing equipment.The furnace tube device can improve wafer film thickness consistency, to improve the yield of semiconductor product.In the embodiment of the utility model, furnace tube device includes main body, shunt and wafer boat.Main body has chamber and with the gas inlet and gas outlet of chamber communication, gas inlet is located at chamber bottom.Shunt is arranged in chamber, reaction cavity is provided in shunt, wafer boat is arranged in reaction cavity, and wafer boat is used to carry wafer. Among them, shunt is equipped with multiple shunt channels, shunt channel is communicated chamber and reaction cavity, and along by chamber bottom to top direction, the sum of cross-sectional area of shunt channel distributed on unit area of shunt is increasing trend.

Description

Technical Field

[0001] This application belongs to the field of semiconductor processing equipment technology, specifically relating to a film forming device, and more particularly to a furnace tube device and semiconductor processing equipment. Background Technology

[0002] In semiconductor film deposition processes, vertical furnace tube equipment is commonly used for the deposition of thin films such as silicon oxide and silicon nitride. Traditional technology employs a design where gas pipelines are directly connected to the furnace tube chamber, allowing process gases to be introduced into the chamber and the desired thin film to be formed on the wafer surface through physical or chemical means.

[0003] However, if the concentration distribution of the process gas in the chamber is uneven during the film deposition process, the film thickness deposited on the wafer at different locations will be uneven. This uneven film thickness will directly affect the manufacturing yield of semiconductor products. Utility Model Content

[0004] This application aims to at least partially solve the technical problem of uneven thin film deposition thickness on wafer surfaces in related technologies. To this end, this application provides a furnace tube apparatus and semiconductor processing equipment.

[0005] To achieve the above objectives, the first aspect of this application provides a furnace tube device, comprising: The main body has a chamber and an air inlet and an air outlet communicating with the chamber, with the air inlet located at the bottom of the chamber; A flow divider is disposed within the chamber, and a reaction chamber is disposed within the flow divider; A crystal boat, located inside the reaction chamber, is used to hold the wafer; The flow divider is provided with multiple flow divider channels, which connect the chamber and the reaction chamber. Along the direction from the bottom to the top of the chamber, the sum of the cross-sectional areas of the flow divider channels distributed on the flow divider per unit area shows an increasing trend.

[0006] In the furnace tube device proposed in this application, a flow divider is installed within the chamber. This flow divider has multiple flow channels connecting the chamber and the reaction chamber, allowing process gases from the chamber to enter the reaction chamber through these channels. Because the sum of the cross-sectional areas of the flow channels distributed on the flow divider per unit area increases progressively, the supply of process gases at different locations within the chamber is balanced, resulting in more uniform process gas distribution within the reaction chamber. This improves the uniformity of thin film deposition and increases product yield.

[0007] In some implementations, the cross-sectional area of ​​the diversion channels increases from the bottom to the top of the chamber, and the center-to-center distance between adjacent diversion channels is the same.

[0008] In some implementations, the cross-section of the diversion channel is circular, and the center-to-center distance between adjacent diversion channels is the same.

[0009] In some implementations, the diversion channel has an inlet end and an outlet end arranged opposite to each other, with the cross-sectional area of ​​the outlet end being larger than that of the inlet end.

[0010] In some implementations, the cross-sectional area of ​​the diversion channel increases along the direction from the air inlet to the air outlet.

[0011] In some implementations, the cross-sectional area of ​​the outlet end is 1.6 to 1.9 times that of the inlet end.

[0012] In some embodiments, the diversion element includes a transition element and a reaction element arranged sequentially from the outside to the inside, the transition element and the reaction element being connected, and the reaction chamber being disposed in the reaction element; each diversion channel includes a diversion outer hole and a diversion inner hole, the diversion outer hole being disposed in the transition element and the diversion inner hole being disposed in the reaction element; the furnace tube device also includes a rotating element, the rotating element being used to drive the reaction element or the transition element to rotate, so that the diversion outer hole and the diversion inner hole are connected or misaligned.

[0013] In some embodiments, the aforementioned rotating member includes a mounting portion and a driving portion, with a transition member mounted on the mounting portion and the driving portion used to drive the mounting portion to rotate. Thus, as the mounting portion rotates, the transition member also rotates, causing relative movement between the transition member and the reactant, connecting or displacing the outer and inner flow orifices distributed on both, thereby controlling the flow of the process gas.

[0014] In some embodiments, one of the transition member and the mounting part has a slot, and the other has a protrusion, with the protrusion engaging within the slot. That is, the transition member and the mounting part are connected by an interlocking fit.

[0015] A second aspect of this application provides a semiconductor processing apparatus, including the furnace tube assembly described above. This semiconductor apparatus may be, in particular, a film deposition apparatus or a heat treatment apparatus, and in addition to the furnace tube assembly, may also include a vacuum device and pipelines connecting the vacuum device and the furnace tube assembly.

[0016] The semiconductor processing equipment proposed in the second aspect of this application, since it includes the furnace tube device proposed in the first aspect, can naturally improve the uniformity of the thin film thickness on the wafer surface, thereby improving the yield of semiconductor products. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1A schematic diagram of the furnace tube device provided in an embodiment of this application is shown; Figure 2 This paper shows a schematic diagram of the flow divider in the furnace tube device provided in an embodiment of the present application; Figure 3 This illustration shows a partial structural diagram of the flow divider in the furnace tube device provided in an embodiment of this application from another perspective; Figure 4 This paper shows a schematic diagram of the structure of the transition component in the furnace tube device provided in an embodiment of this application; Figure 5 This invention provides a schematic diagram of the structure of the reaction element in a furnace tube apparatus according to an embodiment of the present application. Figure 6 This paper shows an assembly diagram of the transition component and the mounting part in the furnace tube device provided in the embodiment of this application.

[0019] Figure label: 10-Furnace tube assembly, 100-Main body, 110-Outer shell, 120-Inner shell, 121-Cavity, 122-Air inlet, 123-Air outlet, 200-Diverter, 210-Diverter channel, 211-Air inlet end, 212-Air outlet end, 230-Transition piece, 231-Diverter outer hole, 233-Protrusion, 240-Reaction piece, 241-Diverter inner hole, 243-Reaction chamber, 300-Crystal boat, 400-Rotating piece, 410-Mounting part, 411-Slot, 500-Pressure valve. Detailed Implementation

[0020] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present utility model.

[0021] It should be noted that all directional indications in this embodiment are only used to explain the relative positional relationship between components in a specific posture. If the specific posture changes, the directional indications will also change accordingly. In this invention, unless otherwise explicitly specified and limited, the terms "connection" and "fixed" should be interpreted broadly. For example, "fixed" can mean a fixed connection, a detachable connection, or an integral part; it can mean a direct connection or an indirect connection through an intermediate medium, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in this invention can be understood according to the specific circumstances.

[0022] Furthermore, where there is no conflict, the technical solutions of various embodiments and implementation methods can be combined with each other, and such combinations are also within the protection scope claimed by this utility model.

[0023] Vertical furnace tube (also known as a vertical furnace tube) equipment is commonly used for the deposition of thin films such as silicon oxide and silicon nitride. Traditional technology uses a design where gas lines are directly connected to the furnace tube chamber. Process gases are introduced into the chamber, and through physical or chemical processes, the desired thin film is deposited on the wafer surface, consuming some of the process gases. However, if the concentration of process gases within the chamber is uneven, the thickness of the deposited film on the wafer surface at different locations within the chamber will be uneven, resulting in poor inter-wafer uniformity. Relatively speaking, the film thickness is smaller closer to the top of the furnace tube and larger closer to the bottom. This non-uniformity directly affects the yield of semiconductor products.

[0024] Based on this, embodiments of this application provide a furnace tube apparatus that can improve the uniform distribution of process gases within the reaction chamber, thereby maintaining a relatively balanced deposition rate at different locations within the furnace tube, ultimately enhancing the uniformity of thin film deposition, ensuring consistent film thickness, and improving product yield. Embodiments of this application also provide a semiconductor device including the aforementioned furnace tube apparatus.

[0025] Please see Figure 1 and Figure 2 The furnace tube device 10 provided in this application embodiment includes a main body 100, a flow divider 200, and a crystal boat 300. The main body 100 has a chamber 121 and an air inlet 122 and an air outlet 123 communicating with the chamber 121. The flow divider 200 is disposed in the chamber 121, and a reaction chamber 243 is disposed in the flow divider 200. The crystal boat 300 is disposed in the reaction chamber 243 and is used to carry the wafer.

[0026] The main body 100 is the foundation component of the furnace tube assembly 10, providing a mounting base and protection for other structural components of the furnace tube assembly 10. Specifically, the main body 100 may include an outer shell 110 and an inner shell 120 disposed within the outer shell 110. A chamber 121 is disposed within the inner shell 120, and an inlet 122 and an outlet 123 are also disposed within the inner shell 120 and communicate with the chamber 121. As the names suggest, the inlet 122 is used to input the process gas required for film formation, and the outlet 123 is used to discharge the process gas after the reaction. Currently, the inlet 122 is usually located at the bottom of the chamber 121, allowing the process gas to enter from the bottom inlet 122 and flow upwards, gradually being consumed during the flow. The outlet 123 can also be located at the bottom of the chamber 121, opposite to the inlet. A heating element may also be disposed within the chamber 121 to heat the reaction chamber 243 for heat treatment of the wafer on the crystal boat 300.

[0027] The diversion component 200 is provided with a diversion channel 210, which connects the chamber 121 and the reaction chamber 243. The cross-section of the diversion channel 210 can be circular, polygonal, or other shapes. The cross-section refers to the surface perpendicular to the axial direction of the diversion channel 210. In this embodiment, from the bottom to the top of the chamber 121, the sum of the cross-sectional areas of the diversion channels 210 distributed per unit area on the diversion component 200 increases. In one implementation, along the direction from the bottom to the top of the chamber 121, the cross-sectional area of ​​the diversion channels 210 increases, and the center-to-center distance between adjacent diversion channels 210 is the same. For example, the radial cross-section of the diversion channel 210 is circular, and among the diversion channels 210 distributed on the entire diversion component 200, the distance between the centers of adjacent diversion channels 210 remains constant at 0.4 cm, while the radius of the circle gradually increases from 0.08 cm to 0.16 cm from bottom to top.

[0028] During film formation, the process gas enters from the bottom inlet 122 and flows upward. As it flows, it is gradually consumed as a thin film forms on the wafer carried on the crystal boat 300, resulting in a decrease in the concentration of the process gas in the upper part. Simultaneously, due to thermal convection and pressure difference, the airflow velocity may be faster in the lower part and slower in the upper part. Therefore, in this embodiment, the sum of the cross-sectional areas of the bottom flow channels 210 of the chamber 121 is relatively small, for example, the aperture is relatively small, which increases flow resistance, slows down the airflow velocity, and prevents excessive reaction on the bottom wafer surface, thus avoiding excessive film thickness. Conversely, the sum of the cross-sectional areas of the top flow channels 210 is relatively large, for example, the aperture is larger, which reduces flow resistance, allowing the process gas to pass through more easily, replenishing the process gas concentration at the top, and making the process gas in the reaction chamber 243 more uniform overall, avoiding uneven film thickness caused by an imbalance between the top and bottom process gases.

[0029] Therefore, in the furnace tube device proposed in this application, by setting a flow divider 200 in the chamber 121, and specifically setting multiple flow divider channels 210 connecting the chamber 121 and the reaction chamber 243 on the flow divider 200, the gas in the chamber 121 will enter the reaction chamber 243 through the flow divider channels 210. Since the sum of the cross-sectional areas of the flow divider channels 210 distributed on the flow divider 200 per unit area increases from bottom to top, for example, the aperture of the flow divider channels 210 gradually increases from bottom to top, the uniformity of gas distribution in the reaction chamber 243 is improved, so that the process gas supply at different positions in the reaction chamber 243 is balanced, ultimately improving the uniformity of thin film deposition and increasing product yield.

[0030] Please see Figure 2 and Figure 3Following the airflow direction, the diversion channel 210 has an inlet end 211 and an outlet end 212 arranged opposite to each other. In this embodiment, the outlet end 212 is located close to the crystal boat 300. In some embodiments, the cross-sectional area of ​​the outlet end 212 is larger than that of the inlet end 211. When the process gas enters the reaction chamber 243 from the chamber 121, the gas enters the diversion channel 210 from the inlet end 211 and enters the reaction chamber 243 from the outlet end 212. Since the cross-sectional area of ​​the outlet end 212 is larger than that of the inlet end 211, it can further promote the diffusion of the process gas and improve the uniformity of the film thickness.

[0031] Practice shows that for the diversion channel 210, the gas diffusion effect is better when the ratio of the cross-sectional area of ​​the outlet end 212 to the cross-sectional area of ​​the inlet end 211 is 1.6 to 1.9:1.

[0032] In some embodiments, the cross-sectional area of ​​the flow divider channel 210 gradually increases along the direction from the inlet end 211 to the outlet end 212. For example, the cross-section of the flow divider channel 210 is circular. Since the cross-sectional area of ​​the flow divider channel 210 gradually increases along the direction from the inlet end 211 to the outlet end 212, that is, the flow divider channel 210 is generally frustum-shaped, this gradually expanding channel design can make the airflow expand smoothly, reduce turbulence caused by abrupt changes in cross-sectional area, make the airflow more stable, and reduce interference to the wafer.

[0033] Please see Figures 3 to 5 In some embodiments, the diversion member 200 includes a transition member 230 and a reaction member 240 arranged from the outside to the inside, the transition member 230 and the reaction member 240 being connected, and a reaction chamber 243 being disposed in the reaction member 240; each diversion channel 210 includes a diversion outer hole 231 and a diversion inner hole 241, wherein the diversion outer hole 231 is disposed in the transition member 230 and the diversion inner hole 241 is disposed in the reaction member 240.

[0034] It is evident that the transition member 230 is provided with multiple diversion external holes 231, and the reaction member 240 is provided with multiple diversion internal holes 241. The multiple diversion external holes 231 and the multiple diversion internal holes 241 correspond one-to-one and can be connected to form multiple diversion channels 210.

[0035] Both the transition element 230 and the reactant 240 can be hollow cylinders. The transition element 230 is fitted onto the outside of the reactant 240, with the inner wall of the transition element 230 adhering to the outer wall of the reactant 240. At least one of the transition element 230 and the reactant 240 has a closed top. Both the transition element 230 and the reactant 240 can be made of materials with high temperature resistance and good chemical stability, such as quartz ceramics, to adapt to the high temperature and chemical gas environment during the film formation process and avoid corrosion of themselves or contamination of the process gases.

[0036] It is understandable that the axial length of the diversion channel 210 cannot be too short; otherwise, the airflow will easily become erratic after passing through the diversion channel 210, affecting the uniform distribution of the gas. In this embodiment, since a transition member 230 and a reaction member 240 are arranged sequentially from the outside to the inside, the diversion outer hole 231 on the transition member 230 and the diversion inner hole 241 on the reaction member 240 are connected to form the diversion channel 210, thereby ensuring that the diversion channel 210 has a certain length, so that the gas passing through the diversion channel 210 forms a stable laminar flow.

[0037] Please combine Figure 1 In some embodiments, the furnace tube device 10 further includes a rotating member 400, which is disposed in the chamber 121, for example, in the space near the bottom of the chamber 121. The rotating member 400 is used to drive the reaction member 240 or the transition member 230 to rotate, so that the reaction member 240 and the transition member 230 move relative to each other, thereby making the diversion outer hole 231 connected to or misaligned with the diversion inner hole 241.

[0038] The connection or misalignment between the outer orifice 231 and the inner orifice 241 refers to the connection or misalignment between the outer orifice 231 and the corresponding inner orifice 241. When the outer orifice 231 and the inner orifice 241 are connected, a flow channel 210 is formed, allowing gas in chamber 121 to enter reaction chamber 243 through the flow channel 210. When the outer orifice 231 and the inner orifice 241 are completely misaligned, the process gas in chamber 121 cannot flow into reaction chamber 243. When the outer orifice 231 and the inner orifice 241 are partially misaligned, the process gas in chamber 121 can flow into reaction chamber 243, but the flow rate is limited. Therefore, the flow rate and whether the process gas can flow in can be controlled by controlling the rotation of the reaction element 240 or the transition element 230.

[0039] Please refer to further information. Figure 1 A pressure valve 500 can be installed at the outlet 123 to detect the gas pressure at the outlet 123. When process gas is introduced into the chamber 121, the outer branch port 231 and the inner branch port 241 can be misaligned. At this time, the pressure valve 500 detects the gas pressure at the outlet 123. When the gas pressure at the outlet 123 reaches the gas pressure threshold, it indicates that the gas inside the chamber 121 meets the conditions for film formation on the wafer surface. Then, the rotating component 400 can be controlled to rotate the reaction component 240 or the transition component 230, so that the outer branch port 231 and the inner branch port 241 are connected, and the process gas can enter the reaction chamber 243, ultimately forming a film on the wafer surface.

[0040] Please see Figure 1 and Figure 6In some embodiments, the rotating member 400 specifically includes a mounting part 410 and a driving part (not shown in the figure), the transition member 230 is mounted on the mounting part 410, and the driving part is used to drive the mounting part 410 to rotate.

[0041] Since the transition member 230 is located on the outside of the reactant 240, it is more convenient for the rotating member 400 to drive the transition member 230 to rotate. Therefore, the rotating member 400 is used to drive the transition member 230. Since the transition member 230 is mounted on the mounting part 410, the driving part drives the mounting part 410 to rotate, which in turn drives the transition member 230 to rotate. This causes the transition member 230 to move relative to the reactant 240, thereby enabling the diversion outer hole 231 to connect with or be misaligned with the diversion inner hole 241.

[0042] Specifically, the drive unit may include a motor and a drive gear. The motor needs to be fixed inside the chamber 121. The mounting part 410 may be circular, and an internal or external gear may be fixed on the outside of the mounting part 410. This gear is concentric with the mounting part 410. The output shaft of the motor is connected to the drive gear, and the drive gear meshes with the gear in the mounting part 410, thereby driving the motor to rotate the drive gear. The drive gear can then drive the mounting part 410 to rotate, thereby driving the transition piece 230 to rotate. Furthermore, rollers or bearings may be added to the bottom of the mounting part 410 to reduce friction with the bottom surface of the chamber 121.

[0043] Of course, in other embodiments, the reaction element 240 can also be driven to rotate, and there is no limitation on this.

[0044] The transition piece 230 and the mounting part 410 can be connected by an insert fitting. See also... Figure 6 In some embodiments, one of the transition member 230 and the mounting part 410 has a groove 411, and the other has a protrusion 233, which engages with the groove 411. By adopting an interlocking fit, effective fixation between the two can be ensured, and disassembly and installation can be facilitated for maintenance and repair.

[0045] Specifically, the transition member 230 may be provided with a protrusion 233 and the mounting part 410 may be provided with a slot 411, or the transition member 230 may be provided with a slot 411 and the mounting part 410 may be provided with a protrusion 233; there is no limitation on this. The protrusion 233 engages with the slot 411, thereby achieving the fixed installation of the transition member 230 on the mounting part 410. Specifically, multiple slots 411 may be provided, and the multiple slots 411 may be evenly distributed around the circumference of the mounting part 410 or the transition member 230. Of course, multiple protrusions 233 may also be provided accordingly, thereby ensuring that the connection points between the transition member 230 and the mounting part 410 are evenly distributed, improving the installation stability of the transition member 230 on the mounting part 410.

[0046] Based on the same inventive concept, this application provides a semiconductor processing apparatus, including the furnace tube device 10 described above, to realize a semiconductor film deposition process. In addition to the furnace tube device, the semiconductor processing apparatus may also include pipelines connected to the furnace tube device and vacuum devices, etc. This semiconductor processing apparatus may be, for example, a chemical vapor deposition (CVD) apparatus. The beneficial effects of the semiconductor processing apparatus provided in this application are the same as those of the furnace tube device 10 described above, and will not be repeated here.

[0047] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.

Claims

1. A furnace tube device, characterized in that, include: The main body has a chamber and an air inlet and an air outlet communicating with the chamber, wherein the air inlet is located at the bottom of the chamber; A flow divider is disposed within the chamber, and a reaction chamber is disposed within the flow divider; A crystal boat is disposed within the reaction chamber and is used to carry the wafer; The diversion component is provided with multiple diversion channels, which connect the chamber and the reaction chamber. Along the direction from the bottom to the top of the chamber, the sum of the cross-sectional areas of the diversion channels distributed on the diversion component per unit area shows an increasing trend.

2. The furnace tube device according to claim 1, characterized in that, Along the direction from the bottom to the top of the chamber, the cross-sectional area of ​​the diversion channel increases, and the center-to-center distance between adjacent diversion channels is the same.

3. The furnace tube device according to claim 2, characterized in that, The cross-section of the diversion channel is circular, and the center-to-center distance between adjacent diversion channels is the same.

4. The furnace tube device according to claim 1, characterized in that, The diversion channel has an air inlet and an air outlet that are arranged opposite to each other, and the cross-sectional area of ​​the air outlet is larger than that of the air inlet.

5. The furnace tube device according to claim 4, characterized in that, Along the direction from the air inlet to the air outlet, the cross-sectional area of ​​the diversion channel tends to increase.

6. The furnace tube device according to claim 4, characterized in that, The cross-sectional area of ​​the air outlet is 1.6 to 1.9 times that of the air inlet.

7. The furnace tube apparatus according to any one of claims 1 to 6, characterized in that, The diversion component includes a transition component and a reaction component arranged sequentially from the outside to the inside, the transition component and the reaction component are connected, and the reaction chamber is disposed in the reaction component; each diversion channel includes a diversion outer hole and a diversion inner hole, the diversion outer hole is disposed in the transition component, and the diversion inner hole is disposed in the reaction component; The furnace tube assembly also includes a rotating component, which drives the reaction element or the transition element to rotate so that the outer flow branch hole is connected to or misaligned with the inner flow branch hole.

8. The furnace tube device according to claim 7, characterized in that, The rotating component includes a mounting part and a driving part. The transition part is mounted on the mounting part, and the driving part is used to drive the mounting part to rotate.

9. The furnace tube device according to claim 8, characterized in that, Of the transition piece and the mounting part, one has a slot and the other has a protrusion, the protrusion being engaged in the slot.

10. A semiconductor processing apparatus, characterized in that, Includes the furnace tube assembly as described in any one of claims 1-9.

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