Wafer thin film deposition necking processing structure and vacuum sputtering coating machine

Abstract

The utility model provides a kind of wafer film deposition necking processing structure and vacuum sputtering coating machine.The processing structure includes seat body, sputtering unit, scanning unit, first object table and second object table.Sputtering unit includes ion gun, and scanning unit includes scanning probe.First object table is slidably installed in seat body, and it has first position for wafer film deposition necking processing and second position for wafer film deposition.First object table is on the bombardment path of ion gun when it is in first position, and first object table is on the scanning path of scanning probe.Second object table is slidably installed in seat body, and it moves with first object table.Wherein, first object table is in second position when second object table is on the bombardment path of ion gun.The wafer film deposition necking processing structure realizes integrated process from film deposition, defect inspection to defect processing, improves deposition efficiency, and saves wafer production time.

Description

Technical Field

[0001] This utility model relates to the field of wafer thin film deposition technology, specifically to a wafer thin film deposition necking structure and a vacuum sputtering coating machine. Background Technology

[0002] In semiconductor manufacturing, multiple thin films are often deposited on the wafer surface to meet process requirements or electrical properties. When deposition is applied to trench structures (such as transistor isolation trenches and capacitors), the deposited film may be non-uniformly deposited at the trench edges, causing film accumulation at the trench opening edges and a reduction in the trench opening size. In subsequent thin film deposition processes, the material is difficult to uniformly cover the bottom of the trench, hindering the filling of subsequent materials, leading to voids or other defects, and ultimately causing device electrical failure or decreased reliability. Utility Model Content

[0003] In view of the problems existing in the prior art, the present invention provides a wafer thin film necking deposition structure and a vacuum sputtering coating machine to improve the technical problem that the existing thin film deposition easily leads to the narrowing of the trench opening and affects the subsequent filling of the trench.

[0004] To achieve the above and other related objectives, the first aspect of this utility model provides a wafer thin film deposition necking processing structure, the processing structure including a base, a sputtering unit, a scanning unit, a first stage, and a second stage. The sputtering unit includes an ion gun disposed above the base. The scanning unit includes a scanning probe disposed above the base. The first stage is slidably mounted on the base and has a first position for wafer thin film deposition necking processing and a second position for wafer thin film deposition. When the first stage is in the first position, it is located on the bombardment path of the ion gun and on the scanning path of the scanning probe. The second stage is slidably mounted on the base and moves with the first stage. When the second stage is located on the bombardment path of the ion gun, the first stage is located in the second position.

[0005] In one embodiment of the processing structure of this utility model, the processing structure further includes a moving unit, the moving unit including a first motor, a first gear and a rack, the first motor being mounted on the first platform or the second platform, the first gear being mounted on the output end of the first motor, and the rack being mounted on the base and connected to the first gear.

[0006] In one embodiment of the processing structure of this utility model, the processing structure further includes a connecting rod, one end of which is connected to the first platform and the other end of which is connected to the second platform.

[0007] In one embodiment of the processing structure of this utility model, the processing structure further includes a moving unit, the moving unit including a first motor, a first gear and a rack, the first motor being mounted on the connecting rod, the first gear being mounted on the output end of the first motor, and the rack being mounted on the base and connected to the first gear.

[0008] In one embodiment of the processing structure of this utility model, the processing structure further includes a lifting unit, the lifting unit includes a lifting rod, and a first through hole adapted for the lifting rod to pass through is provided on the first platform, so that when the first platform is in the first position, the lifting rod is slidably connected to the first platform.

[0009] In one embodiment of the processing structure of this utility model, the number of lifting units is multiple.

[0010] In one embodiment of the processing structure of this utility model, the first platform is rotatably connected to the connecting rod, and the second platform is rotatably connected to the connecting rod.

[0011] In one embodiment of the processing structure of this utility model, electrostatic chucks are also provided on the first stage and the second stage.

[0012] In one embodiment of the processing structure of this utility model, the first stage and the second stage have the same structure.

[0013] The second aspect of this utility model provides a vacuum sputtering coating machine, which includes the wafer thin film deposition necking treatment structure described in any one of the above claims.

[0014] This invention provides a wafer thin film deposition necking treatment structure and a vacuum sputtering coating machine. In this structure, the relative positions of a first stage and a second stage on the base can be slidably adjusted. When the first stage is in the second position, the ion gun performs thin film deposition on the wafer on the first stage. When the first stage is in the first position, the sputtering unit and the scanning unit work together to handle the thin film necking problem at the opening of the wafer trench, thereby ensuring the filling of other materials in the trench or the deposition of other thin film layers in the trench during subsequent processes. This wafer thin film deposition necking treatment structure realizes an integrated process from thin film deposition, defect inspection to defect handling, improving deposition efficiency and saving wafer production time. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other embodiments can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is a three-dimensional structural diagram of the processing structure of this utility model; Figure 2 This is a schematic diagram of the wafer sputtering coating state of the processing structure of this utility model; Figure 3 This is a schematic diagram of the necking process of the wafer thin film deposition structure of this utility model; Figure 4 This is a schematic diagram of the first and second stages of the processing structure of this utility model and their connection. Figure 5 This is a schematic diagram of the connection structure of the first stage of the processing structure of this utility model; Figure 6 Schematic diagram of thin film necking at the wafer trench location Figure 1 ; Figure 7 Schematic diagram of the thin film necking state at the wafer trench location after processing. Figure 1 ; Figure 8 Schematic diagram of thin film necking at the wafer trench location Figure 2 ; Figure 9 Schematic diagram of the thin film necking state at the wafer trench location after processing. Figure 2 .

[0017] Component designation explanation: 100, Base; 200, Sputtering unit; 210, Ion gun; 300, Scanning unit; 310, Scanning probe; 400, First stage; 410, First through hole; 500, Second stage; 600, Connecting rod; 700, Moving unit; 710, First motor; 720, First gear; 730, Rack; 740, Second gear; 800, Lifting unit; 810, Lifting rod; 900, Rotation drive unit; 910, Second motor; 920, Third gear; 930, Fourth gear; 1000, Electrostatic chuck. Detailed Implementation

[0018] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model. It should be noted that, in the absence of conflict, the following embodiments and features in the embodiments can be combined with each other. It should also be understood that the terminology used in the embodiments of this utility model is for describing specific implementation schemes and not for limiting the scope of protection of this utility model. Test methods in the following embodiments that do not specify specific conditions are generally performed under conventional conditions or according to the conditions recommended by the respective manufacturers.

[0019] When numerical ranges are given in the embodiments, it should be understood that, unless otherwise specified in this invention, both endpoints of each numerical range and any value between the two endpoints may be selected. Unless otherwise defined, all technical and scientific terms used in this invention, as well as the prior art known to those skilled in the art and the description of this invention, may be implemented using any prior art methods, equipment, and materials similar to or equivalent to those in the embodiments of this invention.

[0020] It should be noted that the terms such as "upper", "lower", "left", "right", "middle" and "one" used in this specification are only for clarity of description and are not intended to limit the scope of implementation of this utility model. Changes or adjustments to their relative relationships, without substantially altering the technical content, should also be considered as within the scope of implementation of this utility model.

[0021] To address the technical problem that existing thin film deposition methods can easily lead to narrowing of trench openings and affect subsequent material filling of the trenches, this invention provides a wafer thin film deposition necking treatment structure and a vacuum sputtering coating machine.

[0022] Please see Figures 1 to 9The first aspect of this utility model provides a wafer thin film deposition necking structure, which includes a base 100, a sputtering unit 200, a scanning unit 300, a first stage 400, and a second stage 500. The base 100 serves as a mounting base for the first stage 400 and the second stage 500. The structure of the base 100 is not limited and can be any suitable type of structure that meets the sliding motion function and sliding trajectory requirements of the first stage 400 and the second stage 500. The sputtering unit 200 is a sputtering module of a conventional vacuum sputtering coating machine. The sputtering unit 200 includes an ion gun 210, which is located above the base 100. The high-energy ions generated and ejected by the ion gun 210 bombardment path at least partially intersect the sliding trajectories of the first stage 400 and the second stage 500. The scanning unit 300 is a scanning module of a conventional vacuum sputtering coating machine. The scanning unit 300 includes a scanning probe 310 and an image processing device (not shown in the figure). The scanning probe 310 is positioned above the base 100, and its scanning path at least partially intersects the sliding trajectories of the first stage 400 and the second stage 500. The scanning probe 310 and the image processing device scan and input information onto the carrier on the stage.

[0023] Please see Figures 2 to 4 The first stage 400 is a stage for carrying wafers and is slidably mounted on the base 100. The method of fixing the wafer on the first stage 400 is not limited; it can be fixed with a clamp or an electrostatic chuck, but is not limited thereto. The method of sliding the first stage 400 on the base 100 is also not limited; it can be slidably mounted via a sliding groove structure or a guide rail structure, but is not limited thereto. Specifically, in this embodiment, the first stage 400 is slidably mounted on the base 100 via a sliding groove structure. The first stage 400 has a first position for wafer thin film deposition necking processing. When the first stage 400 is in the first position, it is located directly below the scanning probe 310, and both the first stage 400 and the wafer carried on it are located on the scanning path of the scanning probe 310. The scanning unit 300 can then input wafer scanning information. Meanwhile, when the first stage 400 is in the first position, the first stage 400 and the wafer supported on the first stage 400 are located in the bombardment path of the ion gun 210, so that the ion gun 210 bombards the thin film necking at the trench position of the wafer.

[0024] Please see Figure 2 and Figure 3The second stage 500 serves as the target material support unit. The second stage 500 is slidably mounted on the base 100 and moves with the first stage 400. The method of movement of the second stage 500 with the first stage 400 is not limited; it can be synchronously followed by a transmission structure or by a connecting rod, but is not limited thereto. The method of fixing the target material to the second stage 500 is not limited; it can be fixed with a clamp or an electrostatic chuck, but is not limited thereto. The method of sliding the second stage 500 on the base 100 is not limited; it can be slidably mounted via a sliding groove structure or a guide rail structure, but is not limited thereto. Specifically, in this embodiment, the second stage 500 and the first stage 400 slide in the same way, both being slidably mounted on the base 100 via a sliding groove structure. The first stage 400 also has a second position for wafer thin film deposition. When the second stage 500 is located in the bombardment path of the ion gun 210, the first stage 400 is in the second position. The ion gun 210 bombards the target on the second stage 500, causing metal ions to detach and sputter onto the first stage 400 at the second position, thus performing a film deposition process on the wafer on the first stage 400. Sputtering deposition technology is a widely used physical vapor deposition (PVD) method for wafers and has extensive applications in this industry; therefore, it will not be elaborated further here.

[0025] In this wafer thin film deposition necking structure, when wafer deposition is required, the first stage 400 is adjusted to a second position, and the second stage 400 is adjusted to a position compatible with the first stage 400. Specifically, in this embodiment, when the first stage 400 is in the second position, the second stage 500 coincides with the first position of the first stage 400. At this time, the second stage 500 is located on the bombardment path of the ion gun 210. The ion gun 210 bombards the target material, and the atoms bombarded from the target surface can be sputtered onto the first stage 400, thereby achieving thin film deposition on the wafer. After the sputtering deposition process is completed, when necking treatment is required in the trench area of ​​the wafer on the first stage 400, the first stage 400 slides to the first position. Based on the scanning and identification of the first stage 400 by the scanning unit 300, the control system of the vacuum sputtering deposition machine controls the ion gun 210 to bombard the thin film necking area at the trench position of the wafer, thereby addressing the thin film necking problem at the trench opening position and ensuring the filling of other materials in the trench or the deposition of other thin film layers in the trench in subsequent processes. This wafer thin film deposition necking treatment structure can realize an integrated process from wafer thin film deposition, defect inspection to defect treatment, improving deposition efficiency and saving wafer production time. Furthermore, through the cooperation of the scanning unit 300 and the sputtering unit 200, precise bombardment of the wafer trench area is achieved, reducing damage to the wafer pattern and improving pattern accuracy.

[0026] Please see Figures 3 to 5In one embodiment of the processing structure of this utility model, the processing structure further includes a moving unit 700. The moving unit 700 is a power drive unit that enables the first platform 400 and the second platform 500 to slide on the base 100. The moving unit 700 can be a set, driving the first platform 400 and the second platform 500 to move synchronously through a set of moving units 700. Alternatively, there can be two sets of moving units 700, with the two sets of moving units 700 respectively driving the first platform 400 and the second platform 500 to slide, and the second platform 500 following the movement of the first platform 400. The type of moving unit 700 is not limited; it can be any suitable type of structure that enables the first platform 400 or the second platform 500 to slide on the base 100. For example, the moving unit 700 can be a gear and rack transmission structure, a chain transmission structure, or a track transmission structure, but is not limited thereto.

[0027] Specifically, in this embodiment, the moving unit 700 adopts a gear and rack transmission structure. The moving unit 700 includes a first motor 710, a first gear 720, and a rack 730. In one embodiment, the first motor 710 is mounted on the first platform 400, the first gear 720 serves as the driving gear and is mounted on the output end of the first motor 710, and the rack 730 is mounted on the base 100, forming a gear and rack connection structure with the first gear 720. The shape of the rack 730 is adapted to the sliding trajectory of the first platform 400. The first motor 710 drives the first gear 720 to roll along the rack 730, thereby driving the first platform 400 to slide on the base 100. A second gear 740 is also mounted on the second platform 500, serving as the driven gear. The second gear 740 meshes with the rack 730, further improving the stability of the second platform 500 moving synchronously with the first platform 400. In another embodiment, the first motor 710 is mounted on the second stage 500, the first gear 720 is mounted on the output end of the first motor 710, the second gear 740 is mounted on the first stage 500, and the rack 730 is mounted on the base 100. Further details will not be provided here.

[0028] Please see Figure 4 and Figure 5In one embodiment of the processing structure of this utility model, the processing structure further includes a connecting rod 600. The connecting rod 600 rigidly connects the first stage 400 and the second stage 500. One end of the connecting rod 600 is fixedly connected to the first stage 400, and the other end of the connecting rod 600 is fixedly connected to the second stage 500, thereby realizing the follow-up movement of the first stage 400 and the second stage 500. Specifically, in this embodiment, when the first stage 400 moves to the second position, under the action of the connecting rod 600, the second stage 500 follows and moves to the scanning path of the scanning probe 310 and the bombardment path of the ion gun 210, that is, the position of the second stage 500 coincides with the first position of the first stage 400.

[0029] In one embodiment of the processing structure of this utility model, the processing structure further includes a moving unit 700, which can also be connected between the connecting rod 600 and the base 100. Specifically, in this embodiment, the moving unit 700 includes a first motor 710, a first gear 720, and a rack 730. The first motor 710 is mounted on the connecting rod 600, the first gear 720 is mounted on the output end of the first motor 710, and the rack 730 is mounted on the base 100 and meshes with the first gear 720. The connecting rod 600 synchronously drives the sliding movement of the first platform 400 and the second platform 500 through the transmission between the first gear 720 and the rack 730.

[0030] Please see Figure 3 In one embodiment of the processing structure of this utility model, the processing structure further includes a lifting unit 800, which includes a lifting rod 810 and a lifting drive mechanism (not shown in the figure). A first through hole 410 adapted to allow the lifting rod 810 to pass through is provided on the first platform 400, so that when the first platform 400 is in the first position, the lifting rod 810 is slidably connected to the first platform 400. Specifically, under the drive of the lifting drive mechanism, the lifting rod 810 can move up and down in the vertical direction. The lifting drive mechanism can be a conventional lifting drive structure such as a hydraulic drive mechanism, a pneumatic drive mechanism, an electric drive mechanism, or a ball screw drive mechanism, but is not limited to this, as long as it can drive the lifting rod 810 to move up and down. The lifting motion of the lifting rod 810 facilitates the handling of the wafer carrier on the first stage 400. At the same time, when bombarding the wafer on the first stage 400, the lifting height of the lifting rod 810 can be finely adjusted. By abutting and lifting the wafer, the angle of the groove on the wafer can be adjusted, further improving the bombardment effect on the thin film necking at the groove position.

[0031] Please see Figure 1In one embodiment of the processing structure of this utility model, the number of lifting units 800 is multiple. Specifically, in this embodiment, the number of lifting units 800 is four. The four lifting units 800 work independently, which can not only achieve stable lifting of the wafer and separation from the first stage 400, but also lift the wafer at different angles, thereby further improving the processing effect of thin film necking at the wafer trench position.

[0032] Please see Figure 4 and Figure 5 In one embodiment of the processing structure of this utility model, the first platform 400 is rotatably connected to the connecting rod 600. The rotation drive structure of the first platform 400 and the connecting rod 600 is not limited and can be a gear drive structure, a sprocket drive structure, or a direct motor drive structure, as long as it can realize the rotational movement of the first platform 400 relative to the connecting rod 600 or the base 100. Specifically, in this embodiment, the rotation drive unit 900 adopts a gear drive structure, and the rotation drive unit 900 includes a second motor 910, a third gear 920, and a fourth gear 930. In one embodiment, the second motor 910 is mounted on the connecting rod 600, the third gear 920 is mounted on the output end of the second motor 910, and the fourth gear 930 is sleeved and mounted on the lower part of the first platform 400 and meshes with the third gear 920. The first platform 400 is rotatably mounted on the connecting rod 600, thereby realizing that the rotation drive unit 900 drives the first platform 400 to rotate. The rotation of the first stage 400 allows for adjustment of the wafer's rotation, which can increase the bombardment range of the ion gun 210 on the wafer, thereby improving the effect of wafer coating or thin film deposition necking treatment. Similarly, the second stage 500 is rotatably connected to the connecting rod 600. The rotatable connection method between the second stage 500 and the connecting rod 600 is similar and will not be described in detail here.

[0033] Please see Figure 1 In one embodiment of the processing structure of this utility model, an electrostatic chuck 1000 is further provided on the first stage 400 and the second stage 500, and the target material or wafer is supported on the stage by the electrostatic chuck 1000. The structure and working principle of the electrostatic chuck 1000 are well known in the industry and can be obtained through general commercial means.

[0034] In one embodiment of the processing structure of this utility model, the first stage 400 and the second stage 500 have the same structure to simplify the manufacturing process and reduce design costs. Specifically, the second stage 500 is also provided with a second through hole (not shown in the figure), which is adapted to the lifting rod 810. The lifting rod 810 can pass through the second through hole to lift the target material on the second stage 500, making it convenient to pick up the target material.

[0035] The second aspect of this utility model provides a vacuum sputtering coating machine, which includes the wafer thin film deposition necking structure described in any of the above claims. It should be noted that the vacuum sputtering coating machine of this utility model also includes conventional structures and system modules of existing vacuum sputtering coating machines, such as a vacuum chamber, power supply, control system, gas supply system, cooling system, detection and testing system, and protective devices, which will not be described in detail here.

[0036] In the wafer thin film deposition necking treatment structure and vacuum sputtering coating machine of this utility model, the wafer thin film deposition necking treatment structure can slide and adjust the relative positions of the first stage and the second stage on the base. When the first stage is in the second position, the ion gun performs thin film deposition on the wafer on the first stage. When the first stage is in the first position, the sputtering unit and the scanning unit cooperate to handle the thin film necking problem at the opening of the wafer trench, thereby ensuring the filling of other materials in the trench or the deposition of other thin film layers in the trench in subsequent processes. This wafer thin film deposition necking treatment structure realizes an integrated process from thin film deposition, defect inspection to defect handling, improving deposition efficiency and saving wafer production time. It improves the technical problem that existing thin film deposition easily leads to trench opening shrinkage and affects the subsequent filling of materials in the trench. Therefore, this utility model effectively overcomes some practical problems in the prior art and has high utilization value and significance.

[0037] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A wafer thin film deposition necking structure, characterized in that, include: seat body; A sputtering unit, the sputtering unit including an ion gun, the ion gun being disposed above the base; A scanning unit, the scanning unit including a scanning probe, the scanning probe being disposed above the base; A first stage is slidably mounted on the base and has a first position for wafer thin film deposition necking and a second position for wafer thin film deposition; when the first stage is in the first position, the first stage is located on the bombardment path of the ion gun and on the scanning path of the scanning probe. The second stage is slidably mounted on the base and moves with the first stage; wherein, when the second stage is located in the bombardment path of the ion gun, the first stage is located in the second position.

2. The processing structure according to claim 1, characterized in that, The processing structure further includes a moving unit, which includes a first motor, a first gear, and a rack. The first motor is mounted on the first platform or the second platform, the first gear is mounted on the output end of the first motor, and the rack is mounted on the base and connected to the first gear.

3. The processing structure according to claim 1, characterized in that, The processing structure also includes a connecting rod, one end of which is connected to the first platform and the other end of which is connected to the second platform.

4. The processing structure according to claim 3, characterized in that, The processing structure further includes a moving unit, which includes a first motor, a first gear, and a rack. The first motor is mounted on the connecting rod, the first gear is mounted on the output end of the first motor, and the rack is mounted on the base and connected to the first gear.

5. The processing structure according to claim 1, characterized in that, The processing structure further includes a lifting unit, which includes a lifting rod. A first through hole adapted for the lifting rod to pass through is provided on the first platform, so that when the first platform is in the first position, the lifting rod is slidably connected to the first platform.

6. The processing structure according to claim 5, characterized in that, The number of lifting units is multiple.

7. The processing structure according to claim 3, characterized in that, The first platform is rotatably connected to the connecting rod, and the second platform is rotatably connected to the connecting rod.

8. The processing structure according to claim 1, characterized in that, The first stage and the second stage are also equipped with electrostatic chucks.

9. The processing structure according to claim 1 or 4, characterized in that, The first stage and the second stage have the same structure.

10. A vacuum sputtering coating machine, characterized in that, Includes the wafer thin film deposition necking structure as described in any one of claims 1 to 9.

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