Wafer carrier and wafer sputtering structure

CN224798957UActive Publication Date: 2026-09-25NINGBO CHIPEX SEMICON
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Patent Information

Application Number
CN202522070016.6
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-09-25
Publication Date
2026-09-25
Estimated Expiration
2035-09-25

AI Technical Summary

Technical Problem

[0004]针对上述中的相关技术,发明人认为当对小尺寸的晶圆进行溅射操作时,晶圆平台中未被小尺寸晶圆覆盖的区域容易也覆盖一层金属沉积物,使得晶圆平台的上表面出现不平整的情形,在之后放置大尺寸晶圆时,晶圆平台上的大尺寸晶圆容易出现放置不平稳的情况

Benefits of technology

1.一种晶圆载具,通过设置外径不小于晶圆平台外径的载具主体用于放置晶圆,载具主体完全覆盖晶圆平台面减少了金属材料在晶圆平台面沉积的概率;

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Abstract

The application relates to a wafer carrier and a wafer sputtering structure, and belongs to the technical field of semiconductor processing. The wafer carrier is made of a silicon-based material and is used for covering a carrier main body of a wafer platform. The carrier main body is provided with a containing groove for arranging a wafer, and the depth of the containing groove is not less than the thickness of the corresponding wafer. The application has the effect of reducing the influence of small-size wafers on the wafer platform after sputtering operation in a large-size wafer sputtering machine.
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Description

Technical Field

[0001] This application relates to the field of semiconductor processing, and in particular to a wafer carrier and a wafer sputtering structure. Background Technology

[0002] In the semiconductor manufacturing industry, wafers are an indispensable single-crystal silicon substrate material for manufacturing most chips. Wafer diameters are standardized, with common sizes being 150mm, 200mm, and 300mm. Sputtering a metal layer onto the wafer surface (physical vapor deposition, a type of PVD) is also a crucial process in semiconductor manufacturing. This process is typically performed using a sputtering machine.

[0003] Existing sputtering machines are typically fixed-wafer-size sputtering machines. A sputtering machine includes a rack, a wafer platform fixed inside the rack for wafer placement, a sputtering mechanism for sputtering metal material onto the wafer surface, and a drive mechanism for driving the sputtering mechanism.

[0004] Regarding the aforementioned technologies, the inventors believe that when sputtering small-sized wafers, the areas of the wafer platform not covered by the small-sized wafers are easily covered by a layer of metal deposits, resulting in an uneven surface on the wafer platform. Consequently, when placing large-sized wafers on the wafer platform, the large-sized wafers are prone to being placed unstable. Utility Model Content

[0005] In order to reduce the impact of small-sized wafers on the wafer platform after sputtering operations in large-sized wafer sputtering machines, this application provides a wafer carrier and a wafer sputtering structure.

[0006] Firstly, the wafer carrier and wafer sputtering structure provided in this application adopt the following technical solution: A wafer carrier includes a carrier body made of silicon-based material for covering a wafer platform; the carrier body has a receiving groove for wafer placement, the depth of the receiving groove being not less than the thickness of the corresponding wafer.

[0007] By adopting the above technical solution, a wafer carrier is set up to hold the wafer. The carrier body covers the wafer platform, which can shield the sputtered metal material from being deposited, reducing the probability of metal material depositing on the wafer platform surface. The carrier body has a receiving groove with a depth not less than that of the wafer, which helps to stably place the wafer in the receiving groove and reduces the possibility of wafer detachment. The carrier body is made of silicon-based material, whose physical and chemical properties are closer to those of the wafer, and its thermal conductivity and levelness are superior to other materials, reducing the impact of the carrier body on the wafer during the sputtering process.

[0008] Optionally, the carrier body is disk-shaped, and the outer diameter of the carrier body is not less than the outer diameter of the corresponding wafer platform.

[0009] By adopting the above technical solution, the main body of the carrier is a disk with an outer diameter not less than the outer diameter of the corresponding wafer platform, which can better adapt to the wafer platform, improve the coverage effect of the wafer platform, and save manufacturing materials.

[0010] Optionally, the carrier body is made of monocrystalline silicon or polycrystalline silicon.

[0011] By adopting the above technical solution, the carrier body is made of monocrystalline silicon or polycrystalline silicon. The characteristics of monocrystalline silicon or polycrystalline silicon enable the carrier body to have good physical and chemical properties, which can better adapt to the wafer sputtering environment and improve the stability and reliability of wafer sputtering processing.

[0012] Optionally, the outer diameter of the receiving groove is not less than the outer diameter of the corresponding wafer.

[0013] By adopting the above technical solution, the outer diameter of the receiving groove is not less than the outer diameter of the corresponding wafer, which enables the wafer to be smoothly placed in the receiving groove and reduces the possibility that the wafer cannot be placed or is placed unstable due to the outer diameter of the receiving groove being too small.

[0014] Optionally, the top of the carrier body is provided with multiple limiting columns; the spacing between adjacent limiting columns is less than the wafer diameter.

[0015] By adopting the above technical solution, the top of the carrier body is provided with multiple limiting columns with adjacent spacing smaller than the wafer diameter. The limiting columns can limit the wafers arranged in the receiving slot, reducing the probability of the wafers undergoing large displacement or shaking on the carrier body.

[0016] Optionally, the number of limiting columns is four, and they are arranged at uniform intervals along the axis.

[0017] By adopting the above technical solution, the four axially evenly spaced limiting columns, with adjacent spacing smaller than the wafer diameter, can effectively limit the wafer and improve the stability of the wafer on the carrier body.

[0018] Optionally, the bottom surface of the receiving groove is provided with a plurality of lifting through holes arranged in a circumferential array; the lifting through holes are also provided with lifting components that cooperate with the lifting through holes to push the wafer out of the receiving groove.

[0019] By adopting the above technical solution, multiple lifting through holes arranged in a circular array are opened on the bottom surface of the receiving slot. Lifting components that cooperate with the lifting through holes are installed in the lifting through holes, which can push the wafer out of the receiving slot, facilitating wafer loading and unloading operations. At the same time, the circular array arrangement makes the support effect of the lifting components on the wafer more stable.

[0020] Optionally, the lifting assembly includes a base and a lifting column vertically fixed above the base; the top of the lifting column has a lifting surface that abuts against the bottom surface of the wafer.

[0021] By adopting the above technical solution, the lifting assembly includes a base and a lifting column. The top of the lifting column has a lifting surface that abuts against the bottom surface of the wafer. After the lifting surface contacts the wafer, it provides an upward supporting force to the wafer, which can push the wafer out of the receiving slot, facilitating the placement and removal of the wafer. The base makes the installation of the lifting column more stable and improves the stability of the lifting assembly.

[0022] Secondly, this application provides a wafer sputtering structure using the following technical solution: A wafer sputtering structure includes a wafer platform, the aforementioned wafer carrier, and a wafer mounted on the wafer carrier; the wafer carrier covers the wafer platform; the wafer carrier has a receiving groove for accommodating the wafer.

[0023] By adopting the above technical solution, the carrier body has a receiving groove with a depth not less than the wafer thickness and an outer diameter not less than the wafer outer diameter, which can stably place the wafer; the carrier body is disk-shaped and its outer diameter is not less than the outer diameter of the wafer platform, which can completely cover the wafer platform and reduce the probability of the wafer platform being affected by sputtering; the carrier body is made of monocrystalline silicon or polycrystalline silicon, which can adapt to the wafer sputtering environment and provide a stable bearing effect; the top of the carrier body is provided with multiple limiting pillars with adjacent spacing less than the wafer diameter, which can reduce the probability of large wafer displacement; the number of limiting pillars is four and they are evenly spaced axially, which can effectively limit the wafer; overall, it achieves stable bearing of the wafer and protection of the wafer platform, enabling the wafer sputtering structure to work more stably.

[0024] In summary, this application includes at least one of the following beneficial technical effects: 1. A wafer carrier, wherein a carrier body with an outer diameter not less than the outer diameter of a wafer platform is used to place a wafer, and the carrier body completely covers the wafer platform surface, reducing the probability of metal material being deposited on the wafer platform surface; 2. The carrier body is made of silicon-based material, which can be monocrystalline silicon or polycrystalline silicon. It is closer to the material properties of the wafer, can better adapt to the wafer sputtering environment, and improve the stability and reliability of wafer sputtering processing. 3. By setting the outer diameter of the receiving groove to be no less than the outer diameter of the wafer, the depth of the receiving groove to be no less than the thickness of the wafer, and setting limiting posts with a spacing smaller than the wafer diameter, the probability of the wafer undergoing large displacement or shaking on the carrier body is effectively reduced, and the stability of the wafer bearing is improved.

[0025] 4. A wafer sputtering structure, comprising a wafer platform, a wafer carrier, and a corresponding wafer, wherein the wafer is arranged on the wafer carrier, and the wafer carrier and the wafer are arranged together on the top surface of the wafer platform, the wafer carrier can completely cover the wafer platform, thereby reducing the probability of the wafer platform being affected by sputtering and reducing the impact of the wafer sputtering operation on the wafer platform. Attached Figure Description

[0026] Figure 1 This is a schematic diagram illustrating the interaction of the wafer, wafer carrier, and wafer platform in an embodiment of this application.

[0027] Figure 2 This is a schematic diagram of the wafer carrier in Embodiment 1 of this application.

[0028] Figure 3 This is a schematic diagram of the wafer carrier in Embodiment 1 of this application.

[0029] Figure 4 This is a schematic diagram of the lifting component in Embodiment 1 of this application.

[0030] Explanation of reference numerals in the attached drawings: 1. Carrier body; 11. Carrier bottom surface; 12. Accommodation groove; 121. Bearing plane; 1211. Lifting through hole; 1212. Base; 1213. Lifting column; 122. Limiting ring surface; 13. Sputtering shielding ring surface; 14. Limiting column; 2. Wafer platform; 3. Wafer. Detailed Implementation

[0031] The following is in conjunction with the appendix Figure 1-4 This application will be described in further detail.

[0032] Example 1: Embodiment 1 of this application discloses a wafer carrier. (Refer to...) Figure 1 A wafer carrier includes a carrier body 1 made of silicon-based material for covering a wafer platform 2. The carrier body 1 can be made of monocrystalline silicon or polycrystalline silicon. In the embodiments of this application, the carrier body 1 is made of monocrystalline silicon, which is the same material as the wafer 3 and has similar physical and chemical properties.

[0033] Reference Figure 1 and Figure 2 The carrier body 1 is horizontally arranged on top of the wafer platform 2. The carrier body 1 is disk-shaped, with an outer diameter consistent with the wafer platform 2, and can completely cover the wafer platform 2. The carrier body 1 has a carrier bottom surface 11 that fits against the top surface of the wafer platform 2, a receiving groove 12 formed on the top for placing the wafer 3, and a sputtering shielding annular surface 13 located between the edge of the receiving groove 12 and the edge of the carrier body 1. The sputtering shielding annular surface 13 can shield the sputtered metal material in the uncovered areas of the wafer 3, reducing the probability of metal material deposition on the wafer platform 2.

[0034] Reference Figure 1 and Figure 3 The receiving groove 12 includes a bearing plane 121 that abuts against the plane of the wafer 3 and a limiting annular surface 122 surrounding the bearing plane 121. The depth of the receiving groove 12, i.e., the width of the limiting annular surface 122, is not less than the thickness of the corresponding wafer 3. The diameter of the bearing plane 121 is not less than the diameter of the wafer 3. In the embodiments of this application, the width of the limiting annular surface 122 is greater than the thickness of the wafer 3, and the diameter of the bearing plane 121 is greater than the diameter of the wafer 3. When the wafer 3 is placed in the receiving groove 12, the side of the wafer 3 does not abut against the limiting annular surface 122, and the top surface of the wafer 3 is lower than the sputtering shielding annular surface 13 of the carrier body 1.

[0035] Reference Figure 1 Multiple limiting posts 14 are vertically arranged on the sputtering shielding annular surface 13. The limiting posts 14 are evenly spaced along the axial direction, and the distance between adjacent limiting posts 14 is less than the diameter of the wafer 3. In this embodiment, the number of limiting posts 14 is four.

[0036] Reference Figure 2 and Figure 3 Multiple lifting through holes 1211 arranged in a circular array are provided on the bearing plane 121, and the lifting through holes 1211 penetrate the bottom of the receiving groove 12.

[0037] Reference Figure 3 and Figure 4 To facilitate the removal of wafer 3 from the wafer carrier, the wafer carrier is also equipped with a lifting assembly. The lifting assembly includes a base 1212 and a lifting column 1213 vertically fixed above the base 1212. The position of the lifting column 1213 corresponds one-to-one with the position of the lifting through-hole 1211, and its bottom is fixed to the top of the base 1212. When the lifting column 1213 is inserted into the lifting through-hole 1211 from below the receiving groove 12, the top of the lifting column 1213 has a lifting surface that abuts against the bottom surface of the wafer 3, which can push the wafer 3 out of the receiving groove 12. In this embodiment, there are three lifting through-holes 1211 arranged in an equilateral triangular structure, corresponding to three lifting columns 1213.

[0038] Reference Figures 1 to 4 The implementation principle of a wafer carrier in Embodiment 1 of this application is as follows: the wafer 3 is placed in the receiving groove 12 of the carrier body 1, and the carrier body 1 and the wafer 3 are placed together on the wafer platform 2 in the sputtering machine. At this time, the carrier body 1 completely covers the surface of the wafer platform 2. After the sputtering machine completes the sputtering operation, the carrier body 1 carrying the wafer 3 is taken out, and the wafer 3 is pushed out of the carrier body 1 by the lifting component.

[0039] Example 2: Embodiment 2 of this application discloses a wafer sputtering structure. (Refer to...) Figure 1A wafer sputtering structure includes a wafer platform 2, a wafer carrier as described in Embodiment 1 above, and a wafer 3 mounted on the wafer carrier. The wafer carrier includes a carrier body 1 made of silicon-based material and used to cover the wafer platform 2. In this embodiment, the carrier body 1 is made of monocrystalline silicon.

[0040] Reference Figure 1 The carrier body 1 is horizontally arranged on top of the wafer platform 2, and its outer diameter is the same as that of the wafer platform 2, which can completely cover the wafer platform 2. The top of the carrier body 1 is provided with a receiving groove 12 for arranging wafers 3. The depth of the receiving groove 12 is greater than the thickness of the corresponding wafer 3, and the outer diameter of the receiving groove 12 is greater than the outer diameter of the wafer 3.

[0041] Reference Figure 2 The bottom surface of the receiving groove 12 has three lifting through holes 1211 arranged in an equilateral triangular structure. In this embodiment of the application, the number of lifting through holes 1211 is three.

[0042] Reference Figure 3 and Figure 4 The lifting through-hole 1211 is also equipped with a lifting assembly for ejecting the wafer 3 from the receiving groove 12. The lifting assembly includes a base 1212 and a lifting column 1213 vertically fixed above the base 1212. The lifting column 1213 can extend into the lifting through-hole 1211 and eject the wafer 3 from the bottom surface of the receiving groove 12. In this embodiment, the number of lifting columns 1213 corresponding to the lifting through-hole 1211 is also three.

[0043] Reference Figures 1 to 4 The implementation principle of a wafer sputtering structure in Embodiment 2 of this application is as follows: A corresponding wafer 3 is placed in the receiving groove 12 of the wafer carrier. The wafer carrier is horizontally placed on the top surface of the wafer platform 2, completely covering the top surface of the wafer platform 2. When the sputtering machine performs the sputtering operation, part of the sputtered metal material acts on the plane of the wafer 3, and part is blocked by the carrier body 1 and cannot be deposited on the top surface of the wafer platform 2. After the sputtering operation is completed, the wafer 3 is ejected from the carrier body 1 using a lifting assembly.

[0044] The above are all preferred embodiments of this application, and are not intended to limit the scope of protection of this application. Therefore, all equivalent changes made in accordance with the structure, shape and principle of this application should be covered within the scope of protection of this application.

Claims

1. A wafer carrier, characterized in that, Includes a carrier body (1) made of silicon-based material and used to cover a wafer platform (2); the carrier body (1) has a receiving groove (12) for accommodating wafers (3), the depth of the receiving groove (12) being not less than the thickness of the corresponding wafer (3).

2. A wafer carrier according to claim 1, characterized in that, The carrier body (1) is disk-shaped, and the outer diameter of the carrier body (1) is not less than the outer diameter of the corresponding wafer platform (2).

3. A wafer carrier according to claim 1, characterized in that, The carrier body (1) is made of monocrystalline silicon or polycrystalline silicon.

4. A wafer carrier according to claim 1, characterized in that, The outer diameter of the receiving groove (12) is not less than the outer diameter of the corresponding wafer (3).

5. A wafer carrier according to claim 1, characterized in that, The top of the carrier body (1) is provided with multiple limiting columns (14); the distance between adjacent limiting columns (14) is less than the diameter of the wafer (3).

6. A wafer carrier according to claim 5, characterized in that, The number of the limiting columns (14) is four, and they are evenly spaced along the axis.

7. A wafer carrier according to claim 1, characterized in that, The bottom surface of the receiving groove (12) is provided with a plurality of lifting through holes (1211) arranged in a circular array; the lifting through holes (1211) are also provided with lifting components that cooperate with the lifting through holes (1211) to push the wafer (3) out of the receiving groove (12).

8. A wafer carrier according to claim 7, characterized in that, The lifting assembly includes a base (1212) and a lifting column (1213) vertically fixed above the base (1212); the top of the lifting column (1213) has a lifting surface that abuts against the bottom surface of the wafer (3).

9. A wafer sputtering structure, characterized in that, The wafer carrier includes a wafer platform (2), a wafer carrier according to any one of claims 1 to 6, and a wafer (3) mounted on the wafer carrier; the wafer carrier covers the wafer platform (2); the wafer carrier has a receiving slot (12) for accommodating the wafer (3).