Magnetron sputter deposition apparatus
Patent Information
- Application Number
- CN202522189828.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-16
- Publication Date
- 2026-09-25
- Estimated Expiration
- 2035-10-16
AI Technical Summary
现有技术的磁控溅射沉积设备存在以下缺陷：每个靶材5′朝向阳极2′的一侧均会形成等离子团7′，等离子团7′跟随永磁铁6′沿第一方向移动过程中，存在等离子团7′中部分Ar正离子轰击相邻靶材5′的侧面产生电弧的现象，影响等离子团7′的稳定性以及沉积镀膜的稳定性，沉积镀膜品质差
[0018]本实用新型的一种磁控溅射沉积设备，通过隔离板的设置，有效间隔相邻的两个靶材，从而有效隔离每个靶材表面的等离子团，减少靶材表面等离子团与相邻靶材反应产生电弧的情况，提升沉积镀膜的稳定性，保证显示面板沉积镀膜的生产品质；通过在隔离板沿第二方向的两侧设置避让区，且沿第一方向避让区沿第二方向的尺寸由邻近第一腔壁的一端朝向远离第一腔壁的一端逐渐增大，能够对靶材表面的等离子团进行适应性地避让，减少等离子团与隔离板的撞击，提升等离子团的稳定性。
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Figure CN224798959U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of vapor deposition technology, and in particular to a magnetron sputtering deposition device. Background Technology
[0002] Magnetron sputtering is a type of physical vapor deposition (PVD). Its working principle is as follows: Under the influence of an electric field E, electrons collide with argon (Ar) atoms as they fly towards the glass substrate, ionizing them to produce Ar ions and new electrons. The new electrons fly towards the glass substrate, while the Ar ions, accelerated by the electric field, fly towards the cathode target and bombard its surface with high energy, causing the target material to be sputtered. In the sputtered particles, neutral target atoms or molecules are deposited on the glass substrate to form a thin film. The generated secondary electrons are influenced by electric and magnetic fields, confined within closed magnetic field lines near the target surface, and ionize into a large number of Ar ions, forming a plasma cluster. This large number of Ar ions bombard the target in this region, thus achieving a high deposition rate.
[0003] like Figure 1 As shown, existing magnetron sputtering deposition equipment includes a deposition chamber 1' and an anode 2' and a cathode 3' spaced apart within the deposition chamber 1'. A display panel 4' to be deposited is positioned on the side of the anode 2' facing the cathode 3'. Multiple targets 5' are vertically spaced on the side of the cathode 3' facing the anode 2'. Multiple permanent magnets 6', movable vertically, are positioned on the side of the cathode 3' away from the anode 2'. Each target 5' corresponds to one permanent magnet 6'. Existing magnetron sputtering deposition equipment has the following drawbacks: Plasma clusters 7' form on the side of each target 5' facing the anode 2'. As the plasma clusters 7' move along the first direction with the permanent magnets 6', some Ar ions in the plasma clusters 7' bombard the sides of adjacent targets 5', generating electric arcs. This affects the stability of the plasma clusters 7' and the stability of the deposited film, resulting in poor film quality. Utility Model Content
[0004] The purpose of this invention is to provide a magnetron sputtering deposition device with a simple structure and an isolation plate that effectively separates two adjacent targets, reducing the reaction between the plasma clusters on the target surface and the adjacent targets, improving the stability of the plasma clusters, and resulting in high-quality deposited films.
[0005] To achieve this objective, the present invention adopts the following technical solution:
[0006] A magnetron sputtering deposition apparatus is provided, comprising a deposition chamber and a sputtering device. The deposition chamber has a deposition cavity with a first cavity wall disposed along a first direction. The sputtering device is disposed on the first cavity wall and includes multiple sputtering components and multiple isolation components. The multiple sputtering components are spaced apart along a second direction. Each sputtering component includes a target holder, a target material, and a magnetic element. The target material and the magnetic element are respectively located on opposite sides of the target holder along the first direction. The magnetic element is movably disposed on the first cavity wall along the second direction, spaced apart from the target holder. The target material is disposed on the target holder. The isolation components include isolation plates, with the isolation plates spaced apart between adjacent targets. The isolation plates have clearance areas on both sides along the second direction. The isolation plates have a first end face away from the first cavity wall. The clearance areas are disposed adjacent to the first end face. Along the first direction, the size of the clearance areas along the second direction gradually increases from the end away from the first end face towards the end adjacent to the first end face. The first direction is perpendicular to the second direction.
[0007] In one embodiment, the isolation assembly further includes a mounting base disposed on the first cavity wall, the isolation plate is disposed on the mounting base, a plurality of isolation assemblies are spaced apart along the second direction, a plurality of mounting bases and a plurality of magnetic elements are alternately spaced apart along the second direction, and the target base and the mounting base are spaced apart along the first direction.
[0008] In one embodiment, the isolation component further includes a first driving member disposed on the mounting base, and the isolation plate disposed on the driving end of the first driving member, wherein the first driving member is capable of driving the isolation plate to move along the first direction.
[0009] In one embodiment, the isolation assembly further includes an isolation cover disposed on the mounting base. The isolation cover has a placement cavity, and a connection hole is provided on the side of the isolation cover away from the mounting base. The connection hole communicates with the placement cavity. The first driving member is disposed in the placement cavity, and the driving end of the first driving member passes through the connection hole and is connected to the isolation plate.
[0010] In one embodiment, the mounting base is provided with a first cooling chamber, which is connected to an external heat exchanger through a first water inlet pipe and a first water outlet pipe. The target material is provided with a second cooling chamber, which is connected to the first cooling chamber through a second water inlet pipe and a second water outlet pipe.
[0011] In one embodiment, the lengths of both the target and the mounting base extend along a third direction. The magnetron sputtering deposition apparatus further includes insulating connecting blocks. The target is mounted on the mounting base via a plurality of insulating connecting blocks arranged along the third direction, which are perpendicular to the first direction and the second direction, respectively.
[0012] In one embodiment, the insulating connecting block includes a first fixing part and a second fixing part protruding from the first fixing part. The first fixing part has a plurality of through holes extending along the first direction. The plurality of through holes are evenly distributed around the second fixing part. The mounting base has a first threaded hole at the position corresponding to the through holes. A first bolt passes through the through holes and is screwed into the first threaded hole. The first fixing part is connected to the mounting base. The first fixing part has a countersunk hole on the side away from the target base. The countersunk hole extends along the first direction and passes through the second fixing part. The target base has a second threaded hole at the position corresponding to the countersunk hole. A second bolt passes through the countersunk hole and is screwed into the second threaded hole. The second fixing part is fixed to the target base.
[0013] In one embodiment, the first fixing part is provided with a first groove around the second fixing part on the side away from the mounting base, and the first groove is located between the through hole and the outer peripheral wall of the second fixing part.
[0014] In one embodiment, the magnetron sputtering deposition apparatus further includes a plurality of insulating pads, with at least one insulating pad disposed between two adjacent insulating connecting blocks. The insulating pad includes a first support portion and a second support portion protruding from the first support portion. The first support portion abuts against the target seat. The outer peripheral wall of the second support portion is provided with a first thread. The mounting base is provided with a plurality of third threaded holes. The first thread engages with the third threaded holes. The side of the first support portion away from the target seat is provided with a second groove surrounding the second support portion.
[0015] In one embodiment, the isolation plate is provided with clearance grooves on both sides along the second direction, and the clearance grooves penetrate the first end face, forming the clearance area, and the bottom of the clearance grooves is arc-shaped; and / or,
[0016] The target material has a second end face away from the first cavity wall, and the first end face is located on the side of the second end face away from the first cavity wall, and the distance between the first end face and the second end face is 1 to 2 mm.
[0017] The beneficial effects of this utility model are:
[0018] This invention relates to a magnetron sputtering deposition apparatus. By setting an isolation plate, two adjacent targets are effectively separated, thereby effectively isolating the plasma clusters on the surface of each target. This reduces the possibility of arcing caused by the reaction between the plasma clusters on the target surface and adjacent targets, improving the stability of the deposited film and ensuring the production quality of the display panel deposition film. By setting avoidance areas on both sides of the isolation plate along the second direction, and the size of the avoidance area along the second direction gradually increases from the end adjacent to the first cavity wall to the end away from the first cavity wall, the plasma clusters on the target surface can be adaptively avoided, reducing the impact between the plasma clusters and the isolation plate and improving the stability of the plasma clusters. Attached Figure Description
[0019] Figure 1 This is a schematic diagram of an existing magnetron sputtering deposition equipment;
[0020] Figure 2 This is a schematic diagram of the structure of the magnetron sputtering deposition apparatus according to an embodiment of the present invention;
[0021] Figure 3 yes Figure 2 An enlarged view of point A;
[0022] Figure 4 This is a schematic diagram of the cooperation between the target base and the mounting base according to an embodiment of the present invention.
[0023] Figure 1 middle:
[0024] 1′ Deposition chamber; 2′ Anode; 3′ Cathode; 4′ Display panel to be deposited; 5′ Target material; 6′ Permanent magnet; 7′ Plasma cluster;
[0025] Figures 2 to 4 middle:
[0026] 1. Deposition chamber; 11. Deposition cavity; 12. First cavity wall; 2. Sputtering device; 21. Sputtering assembly; 211. Target holder; 2111. Second threaded hole; 212. Target material; 2121. Second end face; 213. Magnetic component; 22. Isolation assembly; 221. Isolation plate; 2211. Clearance area; 2212. First end face; 222. Mounting base; 2221. First threaded hole; 2222. Third threaded hole; 223. First driving component; 224. Isolation cover; 2241. Placement cavity; 3. Insulating connecting block; 31. First fixing part; 32. Second fixing part; 33. Through hole; 34. Countersunk hole; 35. First groove; 4. Insulating pad; 41. First support part; 42. Second support part; 43. Second groove; 5. Anode; 6. Display panel to be plated; 7. Plasma cluster. Detailed Implementation
[0027] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, not the entire structure.
[0028] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.
[0029] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.
[0030] In the description of this embodiment, the terms "upper," "lower," "right," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first" and "second" are only used for distinction in description and have no special meaning.
[0031] like Figures 2 to 4As shown, a magnetron sputtering deposition apparatus of this embodiment includes a deposition chamber 1 and a sputtering device 2. The deposition chamber 1 has a deposition cavity 11, and the deposition cavity 11 has a first cavity wall 12 arranged along a first direction (the first direction is the Z direction shown in the figure). The sputtering device 2 is disposed on the first cavity wall 12 and includes multiple sputtering components 21 and multiple isolation components 22. The multiple sputtering components 21 are spaced apart along a second direction (the second direction is the X direction shown in the figure, i.e., the vertical direction). Each sputtering component 21 includes a target holder 211, a target material 212, and a magnetic component 213. The target material 212 and the magnetic component 213 are respectively located on opposite sides of the target holder 211 along the first direction. The magnetic component 213 is positioned along the first direction. The magnetic component 213 is movably disposed on the first cavity wall 12 in two directions. The target material 212 is disposed on the target base 211 and the isolation component 22 includes an isolation plate 221. An isolation plate 221 is disposed between two adjacent target materials 212. The isolation plate 221 has a clearance area 2211 on both sides along the second direction. The isolation plate 221 has a first end face 2212 away from the first cavity wall 12. The clearance area 2211 is disposed adjacent to the first end face 2212. Along the first direction, the size of the clearance area 2211 along the second direction gradually increases from the end away from the first end face 2212 toward the end adjacent to the first end face 2212. The first direction and the second direction are perpendicular to each other.
[0032] It is understandable that by setting the isolation plate 221, two adjacent targets 212 are effectively separated, thereby effectively isolating the plasma clusters 7 on the surface of each target 212, reducing the possibility of arcing caused by the side reaction between the plasma clusters 7 on the surface of the target 212 and the adjacent target 212, improving the stability of the deposited film, and ensuring the production quality of the deposited film of the display panel; by setting the avoidance area 2211 on both sides of the isolation plate 221 along the second direction, and the size of the avoidance area 2211 along the second direction gradually increases from the end adjacent to the first cavity wall 12 to the end away from the first cavity wall 12, the plasma clusters 7 on the surface of the target 212 can be adaptively avoided, reducing the interference and impact between the plasma clusters 7 and the isolation plate 221, and improving the stability of the plasma clusters 7.
[0033] It should be noted that the magnetic component 213 includes a second driving component and a plurality of permanent magnets disposed at the driving end of the second driving component. The second driving component is disposed on the first cavity wall 12. Due to the magnetic field distribution formed by the permanent magnets, the plasma clusters 7 are arranged in a quasi-elliptical shape with a strong center and weaker sides along the second direction. Therefore, the target material 212 is consumed faster in the center and slower on the sides. When the second driving component moves the permanent magnet to the edge of the target 212 along the second direction, some plasma clusters 7 may be exposed on the target 212. The isolation plate 221 is slightly higher than the target 212. Therefore, the exposed plasma clusters 7 may have a lower semi-elliptical region along the second direction that may collide with the isolation plate 221. By gradually increasing the size of the avoidance area 2211 along the second direction from the end adjacent to the first cavity wall 12 to the end away from the first cavity wall 12, the plasma clusters can be effectively avoided, ensuring the structural stability of the plasma clusters. Even if some plasma clusters collide with the avoidance area 2211, the plasma clusters can be moved away from the first cavity wall 12. Furthermore, the isolation plate 221 is made of titanium metal, which is not easy for the plasma clusters 7 to react. In addition, in this magnetron sputtering deposition equipment, an anode 5 is disposed in the deposition chamber 11 at intervals from the target material 212 along the first direction. A display panel 6 to be deposited is placed on the anode 5. The target 211 is a copper cathode. During sputtering, the anode 5 is connected to the positive terminal of the power supply, and the copper cathode is connected to the negative terminal of the power supply.
[0034] Furthermore, such as Figure 2 As shown, the isolation assembly 22 further includes a mounting base 222 disposed on the first cavity wall 12, the isolation plate 221 is disposed on the mounting base 222, a plurality of isolation assemblies 22 are spaced apart along the second direction, a plurality of mounting bases 222 and a plurality of magnetic components 213 are alternately spaced apart along the second direction, and the target holder 211 and the mounting base 222 are spaced apart along the first direction. By alternately arranging a plurality of mounting bases 222 and magnetic components 213 along the second direction, excessive concentration or conflict of internal components can be effectively avoided, thereby reducing magnetic field interference and improving the overall stability of the equipment. Furthermore, the target holder 211 and the mounting base 222 are spaced apart along the first direction, preventing a short circuit between the target holder 211 and the deposition chamber 1 via the mounting base 222, thus improving the operational safety of the magnetron sputtering deposition equipment.
[0035] Optionally, such as Figure 2 and Figure 3As shown, the isolation plate 221 has a first end face 2212 away from the first cavity wall 12, and the target material 212 has a second end face 2121 away from the first cavity wall 12. The first end face 2212 is located on the side of the second end face 2121 away from the first cavity wall 12, and the distance between the first end face 2212 and the second end face 2121 is 1-2 mm. For example, the distance between the first end face 2212 and the second end face 2121 is 1 mm, 1.1 mm, 1.2 mm, 1.3 mm, 1.4 mm, 1.5 mm, 1.6 mm, 1.7 mm, 1.8 mm, 1.9 mm, 2 mm, etc. If the distance between the first end face 2212 and the second end face 2121 is too large, that is, the length of the isolation plate 221 along the first direction is too long, it may block the target atoms or molecules. If the distance is too small, the isolation effect will be poor. This distance is moderate, which can maintain a stable plasma state and reduce the energy fluctuation of the plasma cluster during sputtering.
[0036] Furthermore, such as Figure 3 As shown, the isolation assembly 22 also includes a first driving member 223, which is disposed on the mounting base 222. The isolation plate 221 is disposed on the driving end of the first driving member 223, and the first driving member 223 can drive the isolation plate 221 to move along the first direction. During sputtering, the target material 212 is continuously consumed, so the plasma cluster 7 will continuously move towards the first cavity wall 12 along the first direction. Therefore, by driving the isolation plate 221 along the first direction away from the first cavity wall 12 through the first driving member 223, the position of the isolation plate 221 can be precisely controlled to ensure the isolation effect of the isolation plate 221.
[0037] Optionally, the isolation assembly 22 further includes an isolation cover 224, which is disposed on the mounting base 222. The isolation cover 224 has a placement cavity 2241, and a connection hole is provided on the side of the isolation cover 224 away from the mounting base 222. The connection hole communicates with the placement cavity 2241. The first driving member 223 is disposed in the placement cavity 2241, and the driving end of the first driving member 223 passes through the connection hole and connects to the isolation plate 221. Since there is a gap between the isolation plate 221 and the target material 212, even if most of the target atoms or molecules move towards the display panel 6 to be plated along the first direction, some free target atoms or molecules will still be deposited on the cavity wall or other structures of the deposition cavity 11. Therefore, by protecting the first driving member 223 through the placement cavity 2241 of the isolation cover 224, the possibility of short circuits caused by the formation of metal plating on the first driving member 223 can be reduced, thereby improving the protection and service life of the first driving member 223.
[0038] Furthermore, in this embodiment, the mounting base 222, the isolation cover 224, and the baffle are all made of titanium. Titanium has very strong corrosion resistance. During magnetron sputtering, the sputtered plasma environment may generate certain corrosive gases or high-energy ions, and titanium can effectively resist these negative effects. Titanium has very low magnetism, which will not interfere with the magnetic field control during the sputtering process, thus helping to maintain plasma stability.
[0039] In some embodiments, a first cooling chamber is provided within the mounting base 222, and the first cooling chamber is connected to an external heat exchanger via a first water inlet pipe and a first water outlet pipe. A second cooling chamber is provided within the target material 212, and the second cooling chamber is connected to the first cooling chamber via a second water inlet pipe and a second water outlet pipe. During sputtering, the temperatures of the target material 212 and the mounting base 222 may rise sharply. Excessively high temperatures can lead to reduced sputtering efficiency and may even affect the quality of the film. The cooling chamber design helps maintain the temperatures of the target material 212 and the mounting base 222 within a suitable range, ensuring the stability of the sputtering process and the quality of the deposited film. For example, coolant flows into the first cooling chamber through the first inlet pipe. Part of the coolant in the first cooling chamber flows along a third direction to one end of the first outlet (the third direction is the Y direction shown in the figure). Part of the coolant flows through the second inlet pipe to the second cooling chamber inside the target 212. The coolant in the second cooling chamber flows along a third direction and flows through the second outlet pipe to the first cooling chamber. Finally, the coolant after heat exchange flows through the first outlet pipe to the heat exchanger for heat exchange. This cycle is used to achieve cooling of the mounting base 222 and the target 212.
[0040] Optionally, both the target holder 211 and the mounting base 222 extend along a third direction. The magnetron sputtering deposition equipment also includes insulating connecting blocks 3. The target holder 211 is mounted on the mounting base 222 via multiple insulating connecting blocks 3 arranged along a third direction, which are perpendicular to the first and second directions, respectively. The target holder 211 is connected to the mounting base 222 via the insulating connecting blocks 3, maintaining a distance and insulation between the target holder 211 and the mounting base 222, thereby improving the installation stability of the target holder 211.
[0041] Furthermore, such as Figure 4As shown, the insulating connecting block 3 includes a first fixing part 31 and a second fixing part 32 protruding from the first fixing part 31. The first fixing part 31 has multiple through holes 33 extending along a first direction. The multiple through holes 33 are evenly distributed around the second fixing part 32. The mounting base 222 has a first threaded hole 2221 at the position corresponding to the through holes 33. The first bolt passes through the through holes 33 and is screwed into the first threaded hole 2221. The first fixing part 31 is connected to the mounting base 222. The first fixing part 31 has a countersunk hole 34 on the side away from the target base 211. The countersunk hole 34 extends along the first direction and penetrates the second fixing part 32. The target base 211 has a second threaded hole 2111 at the position corresponding to the countersunk hole 34. The second bolt passes through the countersunk hole 34 and is screwed into the second threaded hole 2111. The second fixing part 32 is fixed to the target base 211. The insulating connecting block 3 is detachably connected to the target base 211 and the mounting base 222 respectively using bolts, so as to achieve an interval connection between the target base 211 and the mounting base 222. The bolt connection is easy to assemble and disassemble. In addition, the countersunk hole 34 can accommodate and protect the second bolt, so that the second bolt is spaced from the mounting base 222 and the bolt cannot conduct electricity between the target base 211 and the mounting base 222.
[0042] Preferably, a first groove 35 is provided around the second fixing part 32 on the side of the first fixing part 31 away from the mounting base 222. The first groove 35 is located between the through hole 33 and the outer peripheral wall of the second fixing part 32. By providing the first groove 35, the path of the target holder 211 to the mounting base 222 through the insulating connecting block 3 is effectively improved, thereby reducing the possibility of some free target atoms or molecules depositing on the insulating connecting block 3 and causing the target holder 211 and the mounting base 222 to become conductive, thus improving the safety and service life of the magnetron sputtering deposition equipment.
[0043] Furthermore, the magnetron sputtering deposition equipment also includes multiple insulating pads 4, with at least one insulating pad 4 positioned between two adjacent insulating connecting blocks 3. Each insulating pad 4 includes a first support portion 41 and a second support portion 42 protruding from the first support portion 41. The first support portion 41 abuts against the target holder 211. The outer peripheral wall of the second support portion 42 is provided with a first thread. The mounting base 222 is provided with multiple third threaded holes 2222, with the first thread engaging with the third threaded holes 2222. A second groove 43 is provided around the second support portion 42 on the side of the first support portion 41 away from the target holder 211. The insulating pad 4 is screwed into the third threaded hole 2222 for installation, facilitating connection. Therefore, using multiple insulating connecting blocks 3 ensures a stable connection between the target holder 211 and the mounting base 222. The insulating pads support the target holder 211, thereby improving the installation and structural stability of the target holder 211. Moreover, the installation of the target holder 211 is highly convenient, saving time and effort. Meanwhile, the setting of the second groove 43 can effectively improve the path of the target 211 to the mounting base 222 through the insulating pad 4, thereby reducing the possibility of some free target atoms or molecules depositing on the insulating pad 4 and causing the target 211 and the mounting base 222 to become conductive.
[0044] Specifically, the isolation plate 221 has clearance grooves on both sides along the second direction, and the clearance grooves penetrate the first end face 2212, forming a clearance area 2211. The bottom of the clearance grooves is arc-shaped. The clearance grooves effectively avoid physical interference that may occur during sputtering, preventing direct contact between ions or plasma and the surface of the isolation plate 221, thereby reducing unnecessary energy loss and contaminant generation, and helping to improve the quality and stability of the deposited film. The arc-shaped bottom of the clearance grooves optimizes plasma flow and reduces hydrodynamic obstacles caused by sharp angles or protrusions.
[0045] Obviously, the above embodiments of this utility model are merely examples for clearly illustrating the present utility model, and are not intended to limit the implementation of the present utility model. Those skilled in the art can make various obvious changes, readjustments, and substitutions without departing from the protection scope of this utility model. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the protection scope of the claims of this utility model.
Claims
1. A magnetron sputtering deposition apparatus, characterized in that, include: A sedimentation chamber, wherein a sedimentation cavity is provided within the sedimentation chamber, and the sedimentation cavity has a first cavity wall arranged along a first direction; A sputtering apparatus is disposed on a first cavity wall. The sputtering apparatus includes multiple sputtering components and multiple isolation components. The multiple sputtering components are spaced apart along a second direction. Each sputtering component includes a target holder, a target material, and a magnetic component. The target material and the magnetic component are respectively located on opposite sides of the target holder along the first direction. The magnetic component is movably disposed on the first cavity wall along the second direction and is spaced apart from the target holder. The target material is disposed on the target holder. The isolation components include isolation plates. The isolation plates are spaced apart between two adjacent targets. The isolation plates are respectively provided with avoidance areas on both sides along the second direction. The isolation plates have a first end face away from the first cavity wall. The avoidance areas are disposed adjacent to the first end face. Along the first direction, the size of the avoidance areas along the second direction gradually increases from the end away from the first end face toward the end adjacent to the first end face. The first direction is perpendicular to the second direction.
2. The magnetron sputtering deposition apparatus according to claim 1, characterized in that, The isolation assembly further includes a mounting base disposed on the first cavity wall, the isolation plate is disposed on the mounting base, a plurality of isolation assemblies are spaced apart along the second direction, a plurality of mounting bases and a plurality of magnetic components are alternately spaced apart along the second direction, and the target base and the mounting base are spaced apart along the first direction.
3. The magnetron sputtering deposition apparatus according to claim 2, characterized in that, The isolation assembly further includes a first driving member, which is disposed on the mounting base. The isolation plate is disposed on the driving end of the first driving member, and the first driving member can drive the isolation plate to move along the first direction.
4. The magnetron sputtering deposition apparatus according to claim 3, characterized in that, The isolation assembly further includes an isolation cover, which is disposed on the mounting base. The isolation cover has a placement cavity, and a connection hole is provided on the side of the isolation cover away from the mounting base. The connection hole communicates with the placement cavity. The first driving member is disposed in the placement cavity, and the driving end of the first driving member passes through the connection hole and is connected to the isolation plate.
5. The magnetron sputtering deposition apparatus according to claim 3, characterized in that, The mounting base is provided with a first cooling chamber, which is connected to an external heat exchanger through a first water inlet pipe and a first water outlet pipe. The target material is provided with a second cooling chamber, which is connected to the first cooling chamber through a second water inlet pipe and a second water outlet pipe.
6. The magnetron sputtering deposition apparatus according to claim 2, characterized in that, The lengths of both the target holder and the mounting base extend along a third direction. The magnetron sputtering deposition equipment also includes insulating connecting blocks. The target holder is mounted on the mounting base via multiple insulating connecting blocks arranged along the third direction, which are perpendicular to the first direction and the second direction, respectively.
7. The magnetron sputtering deposition apparatus according to claim 6, characterized in that, The insulating connecting block includes a first fixing part and a second fixing part protruding from the first fixing part. The first fixing part has multiple through holes extending along the first direction. The multiple through holes are evenly distributed around the second fixing part. The mounting base has a first threaded hole at the position corresponding to the through holes. A first bolt passes through the through holes and is screwed into the first threaded hole. The first fixing part is connected to the mounting base. The first fixing part has a countersunk hole on the side away from the target base. The countersunk hole extends along the first direction and penetrates the second fixing part. The target base has a second threaded hole at the position corresponding to the countersunk hole. A second bolt passes through the countersunk hole and is screwed into the second threaded hole. The second fixing part is fixed to the target base.
8. The magnetron sputtering deposition apparatus according to claim 7, characterized in that, The first fixing part has a first groove around the second fixing part on the side away from the mounting base. The first groove is located between the through hole and the outer peripheral wall of the second fixing part.
9. The magnetron sputtering deposition apparatus according to claim 6, characterized in that, The magnetron sputtering deposition apparatus further includes multiple insulating pads, with at least one insulating pad disposed between two adjacent insulating connecting blocks. Each insulating pad includes a first support portion and a second support portion protruding from the first support portion. The first support portion abuts against the target base. The outer peripheral wall of the second support portion is provided with a first thread. The mounting base is provided with multiple third threaded holes. The first thread engages with the third threaded holes. The side of the first support portion away from the target base is provided with a second groove surrounding the second support portion.
10. The magnetron sputtering deposition apparatus according to any one of claims 1 to 9, characterized in that, The isolation plate is provided with clearance grooves on both sides along the second direction, and the clearance grooves penetrate the first end face, forming the clearance area, and the bottom of the clearance grooves is arc-shaped; and / or, The target material has a second end face away from the first cavity wall, and the first end face is located on the side of the second end face away from the first cavity wall, and the distance between the first end face and the second end face is 1 to 2 mm.