A semiconductor machine and deposition apparatus

Abstract

The utility model provides a kind of semiconductor machine platform and deposition equipment, semiconductor machine platform, comprising: reaction chamber;Bearing disc, set in the bottom of the reaction chamber, to carry wafer;And mounting mechanism, set in the top of the reaction chamber, the mounting mechanism includes: blocking ring, its bottom and the bearing disc between adaptive connection, its bottom end surface to cover the wafer edge of wafer on the bearing disc;Moving assembly, its movable end is connected on the blocking ring, to drive the blocking ring moves in vertical direction;Rotary assembly, connected to the top of the reaction chamber, its output end is connected to the fixed end of the moving assembly, the rotary assembly rotates to make the blocking ring and the bearing disc connect or separate.The utility model can improve the process standard of wafer epitaxial deposition processing, avoid the situation of metal silicide bare leakage.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a semiconductor machine and deposition equipment. Background Technology

[0002] In the fabrication process of high-dielectric-constant metal gates, after epitaxially depositing metal silicides and interlayer insulating layers on the wafer, dummy gate removal is required. Before dummy gate removal, the wafer surface needs to be polished to planarize it. During the epitaxial deposition of metal silicides, metal silicides may grow at the wafer edges. Subsequently, during wafer surface polishing, due to varying polishing rates in different areas, exposed metal silicides may occur, resulting in metal contamination. Therefore, there are areas for improvement. Utility Model Content

[0003] This invention provides a semiconductor platform and deposition equipment to solve the technical problem in the prior art where metal silicides grown at the crystal edge cause metal leakage and contamination during grinding.

[0004] This utility model provides a semiconductor machine tool, comprising:

[0005] Reaction chamber;

[0006] A support tray, disposed at the bottom of the reaction chamber, has its top surface used to support the wafer; and

[0007] An installation mechanism is disposed at the top of the reaction chamber, the installation mechanism comprising:

[0008] A blocking ring, the bottom of which is adapted to be connected to the carrier disk, and the bottom end face of which is used to cover the edge of the wafer on the carrier disk;

[0009] A movable component, the movable end of which is connected to the blocking ring, so as to drive the blocking ring to move in the vertical direction;

[0010] A rotating assembly is connected to the top of the reaction chamber, and its output end is connected to the fixed end of the moving assembly. The rotating assembly rotates to connect or separate the blocking ring from the carrier plate.

[0011] In one embodiment of the present invention, a connecting block is connected to the bottom edge of the blocking ring, and a limiting block is connected to the top edge of the bearing plate. The connecting block contacts the limiting block so that the blocking ring and the bearing plate are relatively fixed.

[0012] In one embodiment of this utility model, the connecting block is located at the bottom end face of the blocking ring, the circumference of the inner wall of the blocking ring is smaller than the circumference of the wafer, and the circumference of the outer wall of the blocking ring is larger than the circumference of the wafer.

[0013] In one embodiment of this utility model, the connecting block is located at the bottom of the outer wall of the blocking ring, and the circumference of the outer wall of the blocking ring is equal to the circumference of the wafer.

[0014] In one embodiment of this utility model, the number of connecting blocks is two, and the circumference of the circle formed by the line connecting the two connecting blocks is greater than or equal to the circumference of the wafer.

[0015] In one embodiment of this utility model, the moving component is an electric telescopic rod.

[0016] In one embodiment of the present invention, the rotating assembly includes a connecting plate and a drive motor. The drive motor is connected to the top of the reaction chamber, the output end of the drive motor is connected to the connecting plate, the fixed end of the moving assembly is connected to the connecting plate, and the movable end of the moving assembly is connected to the blocking ring.

[0017] In one embodiment of this utility model, the number of the electric telescopic rods is at least three, and the at least three electric telescopic rods are evenly distributed and connected to the blocking ring.

[0018] In one embodiment of this utility model, the sidewall width of the blocking ring is in the range of 3mm to 5mm, and the height of the blocking ring is in the range of 2.5mm to 3mm.

[0019] This invention also proposes a deposition apparatus, including a semiconductor stage as described in any of the above.

[0020] The beneficial effects of this utility model are as follows: This utility model proposes a semiconductor platform and deposition equipment. An unexpected technical effect is achieved by setting a moving component and a rotating component at the top of the reaction chamber. The movable end of the moving component is connected to a blocking ring, which can drive the blocking ring to move vertically. The rotating component can drive the moving component to rotate, and through the correspondence between the moving component and the blocking ring, further drive the blocking ring to rotate. First, the moving component can be used to move the blocking ring towards the carrier plate. Second, when the blocking ring contacts the carrier plate, the rotating component can be used to rotate, so that the blocking ring and the carrier plate are connected, achieving relative fixation between the blocking ring and the carrier plate, preventing the blocking ring from shifting on the carrier plate. Then, by covering the wafer edge on the carrier plate with the sidewall of the blocking ring, epitaxial deposition processing is performed on the wafer surface. This prevents the growth of metal silicides at the wafer edge, thus avoiding exposed metal silicides and improving the process standard of wafer epitaxial deposition. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the specific embodiments of this application or the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0022] Figure 1 A schematic diagram of the structure for growing metal silicides on the wafer surface, provided by existing technology.

[0023] Figure 2 Provided for existing technologies Figure 1 A schematic diagram of the structure after grinding.

[0024] Figure 3 This is a schematic diagram of a semiconductor machine tool provided in an embodiment of the present invention, showing a structure in which the blocking ring and the carrier disk are separated.

[0025] Figure 4 This is a schematic diagram of the connection between the blocking ring and the carrier disk in a semiconductor machine provided in an embodiment of the present invention.

[0026] Figure 5 This is a schematic diagram of a blocking ring in a semiconductor machine provided according to an embodiment of the present invention.

[0027] Figure 6 This is another schematic diagram of the blocking ring in a semiconductor machine provided in an embodiment of the present invention.

[0028] Figure 7 A perspective view of a semiconductor machine provided in an embodiment of the present invention, showing the separation of the blocking ring and the carrier disk.

[0029] Figure 8 This is a perspective view of the connection between the blocking ring and the carrier plate in a semiconductor machine provided according to an embodiment of the present invention.

[0030] Figure 9 This is a schematic diagram of a structure in which metal silicide is grown on the surface of a wafer after being deposited by a semiconductor equipment, according to an embodiment of the present invention.

[0031] Figure 10 The present invention provides an embodiment of the present utility model. Figure 9 A schematic diagram of the structure after grinding.

[0032] Figure 11 This is a schematic diagram of a structure in which metal silicide is grown on the surface of a wafer after being deposited by a semiconductor equipment, which is another embodiment of the present invention.

[0033] Figure 12 This utility model provides another embodiment of the present utility model. Figure 11 A schematic diagram of the structure after grinding.

[0034] Explanation of icon numbers

[0035] 10. Reaction chamber; 20. Support plate; 210. Limiting block; 30. Wafer; 40. Moving component; 410. Blocking ring; 411. Connecting block; 420. Electric telescopic rod; 430. Connecting plate; 440. Drive motor;

[0036] 100, Substrate; 110, Shallow trench isolation trench; 120, Metal silicide pillar; 130, Groove; 140, Trench; 200, Pseudo-gate layer; 300, Gate dielectric layer; 400, Sidewall; 500, Interlayer insulating layer. Detailed Implementation

[0037] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model. It should be noted that, unless otherwise specified, the following embodiments and features described therein can be combined with each other.

[0038] It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation. In actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0039] In the following description, numerous details are explored to provide a more thorough explanation of embodiments of the present invention. However, it will be apparent to those skilled in the art that embodiments of the present invention may be practiced without these specific details. In other embodiments, well-known structures and devices are shown in block diagram form rather than in detail to avoid obscuring embodiments of the present invention.

[0040] Please see Figures 1 to 2 In existing technologies, if metal silicides grow at the edge of wafer 30, during polishing, due to varying polishing rates in different areas, exposed metal silicides may leak out, contaminating related manufacturing processes. Please refer to [link to relevant documentation]. Figures 3 to 12 This invention proposes a semiconductor equipment that, before performing epitaxial deposition on the surface of wafer 30, blocks the edge of wafer 30 to provide protection, thereby solving the problem of metal leakage and contamination during subsequent polishing. Specific embodiments are described in detail below.

[0041] Please see Figure 3 and Figure 4 In one embodiment of this utility model, a semiconductor apparatus is proposed, which may include a reaction chamber 10, a carrier plate 20, and a mounting mechanism.

[0042] Specifically, the reaction chamber 10 is a chamber for epitaxial deposition of the wafer 30. The top surface of the support disk 20 serves to support the wafer 30, and the support disk 20 is disposed at the bottom of the reaction chamber 10. The mounting mechanism cooperates with the support disk 20 to limit the position of the wafer 30, and the mounting mechanism can be disposed at the top of the reaction chamber 10.

[0043] Specifically, the mounting mechanism may include a blocking ring 410, a moving component 40, and a rotating component. The bottom of the blocking ring 410 corresponds to the support disk 20, and the bottom end face of the blocking ring 410 is used to cover the edge of the wafer 30 on the support disk 20. The moving component 40 may be disposed on the top of the reaction chamber 10, and the movable end of the moving component 40 is connected to the blocking ring 410, so that the moving component 40 can drive the blocking ring 410 to move.

[0044] For example, the wafer 30 is placed on the top surface of the carrier disk 20, and then the retaining ring 410 is adapted to connect with the carrier disk 20, thereby fixing the wafer 30 onto the carrier disk 20. On the carrier disk 20, since the bottom end face of the retaining ring 410 covers the edge of the wafer 30, the growth of metal silicides at the edge of the wafer 30 can be avoided during epitaxial deposition on the surface of the wafer 30.

[0045] Please see Figure 3 and Figure 4 In one embodiment of this utility model, the moving component 40 may be an electric telescopic rod 420, and the rotating component includes a drive motor 440 and a connecting plate 430.

[0046] Specifically, the drive motor 440 is connected to the top of the reaction chamber 10, and the output end of the drive motor 440 is connected to the connecting plate 430. The top of the electric telescopic rod 420 is connected to the connecting plate 430, and the top end of the electric telescopic rod 420 is a fixed end. The bottom end of the electric telescopic rod 420 is connected to the blocking ring 410, and the bottom end of the electric telescopic rod 420 is a movable end. The electric telescopic rod 420 is connected between the connecting plate 430 and the blocking ring 410. The electric telescopic rod 420 has the function of telescopic movement. The electric telescopic rod 420 can drive the blocking ring 410 to move in the vertical direction, thereby realizing the connection or separation between the blocking ring 410 and the bearing plate 20.

[0047] For example, the drive motor 440 can drive the connecting plate 430 to rotate. When the connecting plate 430 rotates, the electric telescopic rod 420 and the blocking ring 410 connected to the connecting plate 430 also rotate together. Under the action of the drive motor 440 and the electric telescopic rod 420, the blocking ring 410 can move vertically and rotate horizontally within the reaction chamber 10, thereby facilitating the alignment between the blocking ring 410 and the support plate 20.

[0048] Please see Figure 3 and Figure 4 In one embodiment of this utility model, the number of electric telescopic rods 420 is at least three, and the at least three electric telescopic rods 420 are symmetrically connected to the blocking ring 410. When the number of electric telescopic rods 420 is at least three, the bottom ends of the at least three electric telescopic rods 420 can be located on the same plane. When the bottom ends of the at least three electric telescopic rods 420 are connected to the blocking ring 410, it can be ensured that the blocking ring 410 is on a horizontal plane.

[0049] Please see Figure 4 , Figure 7 and Figure 8In one embodiment of this utility model, a connecting block 411 is provided at the bottom of the blocking ring 410, and a limiting block 210 is provided at the top of the bearing plate 20. The connecting block 411 and the limiting block 210 correspond to each other. That is, the number of connecting blocks 411 is the same as the number of limiting blocks 210, the size of the connecting block 411 is adapted to the size of the limiting block 210, and the limiting block 210 plays the role of limiting the connecting block 411.

[0050] For example, such as Figure 5 As shown, the connecting block 411 is located at the bottom end face of the blocking ring 410. The circumference of the inner wall of the blocking ring 410 is smaller than the circumference of the wafer 30, and the circumference of the outer wall of the blocking ring 410 is larger than the circumference of the wafer 30. That is, the inner wall of the blocking ring 410 is located on the surface of the wafer 30, and the outer wall of the blocking ring 410 is located outside the wafer 30.

[0051] For example, such as Figure 6 As shown, the connecting block 411 is located at the bottom of the outer wall of the blocking ring 410, and the circumference of the outer wall of the blocking ring 410 is equal to the circumference of the wafer 30. That is, the inner wall of the blocking ring 410 is located on the surface of the wafer 30, and the outer wall of the blocking ring 410 coincides with the outer wall of the wafer 30.

[0052] Specifically, such as Figure 4 , Figure 5 and Figure 6 As shown, there are two connecting blocks 411. The circumference of the circle formed by the line connecting the two connecting blocks 411 is greater than or equal to the circumference of the wafer 30. When the circumference of the circle corresponding to the connecting block 411 is greater than the circumference of the wafer 30, the connecting block 411 can be located outside the wafer 30. When the circumference of the circle corresponding to the connecting block 411 is equal to the circumference of the wafer 30, the connecting block 411 can contact the outer wall of the wafer 30.

[0053] Please see Figure 4 , Figure 5 and Figure 6 In one embodiment of the present invention, the sidewall width of the blocking ring 410 is in the range of 3mm to 5mm, and the height of the blocking ring 410 is in the range of 2.5mm to 3mm.

[0054] Specifically, such as Figure 1 and Figure 2 As shown, in the prior art, if metal silicide is grown at the 2.5mm position of the wafer edge 30, during the subsequent polishing process of wafer 30, due to the different polishing rates in different areas, metal silicide leakage may occur, resulting in metal leakage and contamination.

[0055] like Figure 4 , Figure 5 and Figure 6As shown, in this embodiment, the problem of metal leakage and contamination can be solved by covering the edge of the wafer 30 on the carrier disk 20 with the sidewall of the blocking ring 410. However, if the sidewall width of the blocking ring 410 is too large, it will occupy a large area of ​​the wafer 30 surface, resulting in low utilization of the wafer 30 surface area. Conversely, if the sidewall width of the blocking ring 410 is too small, it will occupy a small area of ​​the wafer 30 surface, resulting in the wafer 30 edge at a position of 2.5mm not being covered by the blocking ring 410. Therefore, the sidewall width of the blocking ring 410 can be set in the range of 3mm to 5mm.

[0056] For example, such as Figure 4 and Figure 5 As shown, if the connecting block 411 is located at the bottom end face of the blocking ring 410, the circumference of the inner wall of the blocking ring 410 is smaller than the circumference of the wafer 30, and the circumference of the outer wall of the blocking ring 410 is larger than the circumference of the wafer 30, the side wall width of the blocking ring 410 can be set to 5mm.

[0057] For example, such as Figure 4 and Figure 6 As shown, if the connecting block 411 is located at the bottom of the outer wall of the blocking ring 410, and the circumference of the outer wall of the blocking ring 410 is equal to the circumference of the wafer 30, the side wall width of the blocking ring 410 can be set to 3mm.

[0058] Please see Figure 4 , Figure 7 and Figure 8 As shown, in one embodiment of the present invention, the surface of the blocking ring 410 is smooth and the material can be ceramic. Setting the surface of the blocking ring 410 to be smooth can avoid epitaxial deposition treatment, which would otherwise form metal silicides on the surface of the blocking ring 410.

[0059] Please see Figure 4 , Figure 7 and Figure 8 As shown, in one embodiment of this utility model, in the initial state, as Figure 7 As shown, the carrier disk 20 is located at the bottom of the reaction chamber 10, and the blocking ring 410 and the moving assembly 40 are located at the top of the reaction chamber 10. The blocking ring 410 and the carrier disk 20 are separated from each other. The following installation process can be used for mounting the wafer 30 in the reaction chamber 10.

[0060] First, the wafer 30 is placed on the top surface of the carrier disk 20. For example, the wafer 30 can be placed in the pre-defined marked area on the top of the carrier disk 20 so that after the subsequent adapter connection between the blocking ring 410 and the carrier disk 20, the wafer 30 can be located between the blocking ring 410 and the carrier disk 20.

[0061] Secondly, such as Figure 8As shown, the electric telescopic rod 420 extends to move the blocking ring 410 downward until it contacts the support plate 20. Then, the connecting plate 430 can be rotated by the drive motor 440. The rotation of the connecting plate 430 causes the electric telescopic rod 420 and the blocking ring 410 to rotate synchronously until the connecting block 411 on the blocking ring 410 contacts the limiting block 210 on the support plate 20. The limiting block 210 limits the connecting block 411, thus ensuring proper engagement between the blocking ring 410 and the support plate 20 and preventing the blocking ring 410 from shifting.

[0062] Please see Figure 9 and Figure 10 In one embodiment of this invention, for cases where trenches 140 are etched at the edge of wafer 30, this embodiment covers the edge of wafer 30 on the carrier disk 20 with the sidewall of the blocking ring 410. Subsequently, epitaxial deposition is performed on the surface of wafer 30, thus preventing the growth of metal silicides at the edge of wafer 30. Figure 9 As shown. Figure 10 As shown, the interlayer dielectric layer 500 is polished to expose the dummy gate layer 200 without exposing the metal silicide.

[0063] Please see Figure 11 and Figure 12 In one embodiment of this invention, if a blocking ring 410 is disposed on the surface of wafer 30 before the etching process of wafer 30, and the sidewalls of the blocking ring 410 cover the edge of wafer 30 on the carrier disk 20, then trenches 140 will not be etched at the edge of wafer 30. Subsequently, if epitaxial deposition is performed on the surface of wafer 30, metal silicides will not grow at the edge of wafer 30. Figure 11 As shown. Figure 12 As shown, the interlayer dielectric layer 500 is polished to expose the dummy gate layer 200 without exposing the metal silicide.

[0064] In addition, in one embodiment of the present invention, a deposition apparatus is also provided, including a semiconductor machine as described above. Since the bottom end face of the blocking ring 410 covers the edge of the wafer 30 on the carrier disk 20, metal silicides will not grow at the edge of the wafer 30 when epitaxial deposition is performed on the surface of the wafer 30.

[0065] In summary, this invention proposes a semiconductor platform and deposition equipment. An unexpected technical advantage is achieved by incorporating a moving component and a rotating component at the top of the reaction chamber. The movable end of the moving component is connected to a blocking ring, allowing the blocking ring to move vertically. The rotating component drives the moving component to rotate, and through the correspondence between the moving component and the blocking ring, further drives the blocking ring to rotate. First, the moving component moves the blocking ring towards the carrier plate. Second, when the blocking ring contacts the carrier plate, the rotating component rotates to connect the blocking ring and the carrier plate, achieving relative fixation and preventing the blocking ring from shifting on the carrier plate. Subsequently, by covering the wafer edge on the carrier plate with the sidewall of the blocking ring, epitaxial deposition is performed on the wafer surface. This prevents the growth of metal silicides at the wafer edge, thus avoiding exposed metal silicides and improving the process standard of wafer epitaxial deposition.

[0066] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model. As used herein and throughout the claims below, unless otherwise specified, "a" and "the" include plural references. Similarly, as used herein and throughout the claims below, unless otherwise specified, "in" means "in" and "on".

Claims

1. A semiconductor machine, characterized in that, include: Reaction chamber; A support tray is disposed at the bottom of the reaction chamber, and its top surface is used to support the wafer; as well as An installation mechanism is disposed at the top of the reaction chamber, the installation mechanism comprising: A blocking ring, the bottom of which is adapted to be connected to the carrier disk, and the bottom end face of which is used to cover the edge of the wafer on the carrier disk; A movable component, the movable end of which is connected to the blocking ring, so as to drive the blocking ring to move in the vertical direction; A rotating assembly is connected to the top of the reaction chamber, and its output end is connected to the fixed end of the moving assembly. The rotating assembly rotates to connect or separate the blocking ring from the carrier plate.

2. The semiconductor machine according to claim 1, characterized in that, A connecting block is connected to the bottom edge of the blocking ring, and a limiting block is connected to the top edge of the bearing plate. The connecting block contacts the limiting block so that the blocking ring and the bearing plate are relatively fixed.

3. The semiconductor machine according to claim 2, characterized in that, The connecting block is located at the bottom end face of the blocking ring. The circumference of the inner wall of the blocking ring is smaller than the circumference of the wafer, and the circumference of the outer wall of the blocking ring is larger than the circumference of the wafer.

4. The semiconductor machine according to claim 2, characterized in that, The connecting block is located at the bottom of the outer wall of the blocking ring, and the circumference of the outer wall of the blocking ring is equal to the circumference of the wafer.

5. The semiconductor machine according to claim 2, characterized in that, The number of connecting blocks is two, and the circumference of the circle formed by the line connecting the two connecting blocks is greater than or equal to the circumference of the wafer.

6. The semiconductor machine according to claim 1, characterized in that, The moving component is an electrically operated telescopic pole.

7. The semiconductor machine according to claim 1, characterized in that, The rotating assembly includes a connecting plate and a drive motor. The drive motor is connected to the top of the reaction chamber, and the output end of the drive motor is connected to the connecting plate. The fixed end of the moving assembly is connected to the connecting plate, and the movable end of the moving assembly is connected to the blocking ring.

8. The semiconductor machine according to claim 6, characterized in that, The number of the electric telescopic rods is at least three, and the at least three electric telescopic rods are evenly distributed and connected to the blocking ring.

9. The semiconductor machine according to claim 1, characterized in that, The width of the sidewall of the blocking ring is in the range of 3mm to 5mm, and the height of the blocking ring is in the range of 2.5mm to 3mm.

10. A deposition apparatus, characterized in that, Includes the semiconductor equipment as described in any one of claims 1 to 9.

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