Air intake device and semiconductor processing apparatus

Abstract

The application discloses an air inlet device and a semiconductor processing equipment, and belongs to the technical field of semiconductor processing equipment. The air inlet device comprises an air inlet piece, a first air uniformizing plate and a jet plate. External gas passes through the air inlet piece, the first air uniformizing plate and the jet plate in sequence and is discharged along a first direction. The jet plate is provided with a plurality of air outlet holes. The first air uniformizing plate is adjacent to the jet plate in the upstream and downstream directions of airflow circulation. The first air uniformizing plate is provided with a plurality of first air uniformizing holes. The sum of the flow cross-sectional areas of the plurality of first air uniformizing holes is greater than the sum of the flow cross-sectional areas of the plurality of air outlet holes. Through the above arrangement, the gas flow rate is relatively slow when passing through the first air uniformizing plate, and there is enough time and space for uniformization. When passing through the jet plate, the gas flow rate increases due to the decrease of the flow cross-sectional area, so that the gas can enter the reaction cavity in a concentrated and high-speed form, the loss of the reaction gas on the upstream side of the reaction cavity is reduced, and enough process gas can also be obtained on the downstream side of the reaction cavity.

Description

Technical Field

[0001] This application relates to the field of semiconductor processing equipment technology, and in particular to an air intake device and semiconductor processing equipment. Background Technology

[0002] Currently, chemical vapor deposition (CVD) is the main method used for growing silicon carbide epitaxial layers. In epitaxial growth, the control of the gas flow field is a crucial factor affecting process uniformity.

[0003] In related technologies, gas dispersion needs to be controlled to ensure uniform gas distribution in the reaction zone. However, after dispersion, the process gas flow rate entering the reaction chamber is significantly reduced, leading to excessive consumption of process gas on the upstream side of the reaction chamber. Consequently, the downstream side of the reaction chamber cannot obtain sufficient process gas, resulting in uneven distribution of process gas participating in the reaction above the substrate and affecting film formation quality. Utility Model Content

[0004] This application provides an air intake device, which aims to solve the technical problem of severe loss of process gas flow rate when the process gas enters the reaction chamber after dispersion.

[0005] Technical solution: This application discloses an air intake device applied to a semiconductor processing equipment. The air intake device is used to introduce external gas into the reaction chamber of the semiconductor processing equipment. The air intake device includes an air intake component, a first gas equalization plate, and a jet plate. The external gas passes through the air intake component, the first gas equalization plate, and the jet plate in sequence and is discharged along a first direction. The jet plate is provided with multiple air outlets. In the upstream and downstream direction of airflow, the first air distribution plate is adjacent to the jet plate, and the first air distribution plate is provided with multiple first air distribution holes. The total cross-sectional area of ​​the plurality of first air distribution holes is greater than the total cross-sectional area of ​​the plurality of air outlet holes.

[0006] In some embodiments, the air outlet and the first air distribution hole are offset in the first direction.

[0007] In some embodiments, the first air distribution plate includes multiple rows of first air distribution holes spaced apart along a second direction, each row of first air distribution holes including multiple first air distribution holes spaced apart along a third direction, the second direction, the third direction and the first direction intersect each other; The plurality of air outlets are arranged at intervals along a third direction, and the orthographic projection of the air outlets on the first air distribution plate is located between two adjacent rows of the first air distribution holes.

[0008] In some embodiments, the air intake device includes a guide tube that extends along the first direction and is adjacent to the side of the jet plate opposite to the first air distribution plate. On a projection plane perpendicular to the first direction, the orthographic projection of the air outlet lies within the orthographic projection of the guide pipe, and satisfies: d≥1 / 3h; Wherein, d is the minimum distance between the orthographic projection of the air outlet and the orthographic projection of the guide tube in the second direction, and h is the internal dimension of the guide tube in the second direction, which is perpendicular to the first direction.

[0009] In some embodiments, the diameter of the air outlet is the same as the diameter of the first air distribution hole, and the number of air outlets is less than the number of the first air distribution holes. Alternatively, the number of air outlets is the same as the number of the first air distribution holes, and the diameter of the air outlets is smaller than the diameter of the first air distribution holes.

[0010] In some embodiments, the air intake device includes a housing, the housing including a peripheral sidewall and an end wall connected to each other, the peripheral sidewall extending along the first direction, the end wall sealing one end of the peripheral sidewall in the first direction, the first air distribution plate disposed in the housing and connected to the peripheral sidewall, and the jet plate sealing the other end of the peripheral sidewall in the first direction and detachably connected to the peripheral sidewall. The air intake component includes an air intake connector, which is disposed on the end wall or the peripheral side wall.

[0011] In some embodiments, the air intake device further includes a second air distribution plate, which is disposed inside the housing and connected to the peripheral sidewall. The second air distribution plate is located upstream of the first air distribution plate, and the second air distribution plate is provided with a plurality of second air distribution holes. The total cross-sectional area of ​​the first air distribution holes on the first air distribution plate is greater than the total cross-sectional area of ​​the second air distribution holes on the second air distribution plate. And / or, there are multiple second air equalization plates, which are arranged at intervals along the upstream and downstream direction of airflow. In two adjacent second air equalization plates, the total cross-sectional area of ​​the second air equalization holes on the downstream second air equalization plate is greater than the total cross-sectional area of ​​the second air equalization holes on the upstream second air equalization plate.

[0012] In some embodiments, the air intake device includes a plurality of isolation members and has a plurality of air equalization chambers. The plurality of air equalization chambers are arranged in the upstream and downstream directions of the airflow. Each air equalization chamber is provided with the isolation member. The isolation member divides the air equalization chamber into a plurality of independent sub-chambers. The sub-chambers are arranged along a third direction, and the plurality of sub-chambers of two adjacent air equalization chambers are arranged in a one-to-one correspondence. The number of air inlet connectors is multiple, and the multiple sub-cavities of the uppermost air distribution chamber are respectively connected to at least one air inlet connector.

[0013] In some embodiments, the plurality of air-uniforming chambers are divided into multiple levels according to the upstream and downstream direction of airflow. In two adjacent levels, the volume ratio of the plurality of sub-cavities of the air-uniforming chamber in the previous level is the same as the volume ratio of the plurality of sub-cavities of the air-uniforming chamber in the subsequent level.

[0014] This application also discloses a semiconductor processing apparatus, including the air intake device described in the above embodiments.

[0015] Beneficial Effects: The air intake device in this embodiment is applied to semiconductor processing equipment. The air intake device is used to introduce external gas into the reaction chamber of the semiconductor processing equipment. The air intake device includes an air intake component, a first gas equalization plate, and a jet plate. The external gas passes sequentially through the air intake component, the first gas equalization plate, and the jet plate, and is discharged along a first direction. The jet plate has multiple outlet holes. In the upstream and downstream directions of the airflow, the first gas equalization plate is adjacent to the jet plate, and the first gas equalization plate has multiple first gas equalization holes. The total flow cross-sectional area of ​​the multiple first gas equalization holes is greater than the total flow cross-sectional area of ​​the multiple outlet holes. By limiting the total flow cross-sectional area of ​​the first gas equalization holes on the first gas equalization plate to satisfy the above relationship with the total flow cross-sectional area of ​​the outlet holes on the jet plate, the gas flow velocity is relatively slow when passing through the first gas equalization plate, allowing sufficient time and space for homogenization. When passing through the jet plate, due to the reduced flow cross-sectional area, the gas flow velocity increases, thereby allowing it to enter the reaction chamber in a concentrated and high-speed manner. This reduces the loss of reaction gas on the upstream side of the reaction chamber and ensures that sufficient process gas is also obtained on the downstream side of the reaction chamber. Through the synergistic effect of the first gas distribution plate and the jet plate, the process gas can be more evenly distributed in the reaction chamber, reducing film quality problems caused by uneven gas distribution and helping to improve the uniformity and consistency of epitaxial layer growth such as silicon carbide.

[0016] Other features and advantages of this application will be described in detail in the following detailed description section. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] To gain a more complete understanding of this application and its beneficial effects, the following description will be provided in conjunction with the accompanying drawings, wherein the same reference numerals in the following description denote the same parts.

[0019] Figure 1 This is a three-dimensional structural diagram of the air intake device disclosed in the embodiments of this application; Figure 2 This is a half-sectional schematic diagram of the air intake device disclosed in the embodiments of this application; Figure 3 This is a half-sectional schematic diagram of the air intake device disclosed in the embodiments of this application, and the sectional plane is parallel to... Figure 2 The sectional plane is perpendicular; Figure 4 This is a three-dimensional structural schematic diagram of an air intake device disclosed in another embodiment of this application; Figure 5 This is a half-sectional schematic diagram of an air intake device disclosed in another embodiment of this application; Figure 6 This is a cross-sectional schematic diagram of the air intake device disclosed in the embodiments of this application; Figure 7 This is a cross-sectional schematic diagram of the air intake device disclosed in the embodiments of this application, and the cross-sectional plane is parallel to... Figure 6 The sectional planes are parallel; Figure 8 This is a front view schematic diagram of the air intake device disclosed in the embodiments of this application; Figure 9 This is a cross-sectional schematic diagram of an air intake device disclosed in another embodiment of this application, and the cross-sectional plane is parallel to... Figure 6 The sectional planes are parallel; Figure 10 This is a front view schematic diagram of an air intake device disclosed in another embodiment of this application; Figure 11 This is a top view of the intake device disclosed in another embodiment of this application, showing the guide pipe.

[0020] Explanation of reference numerals in the attached figures: 1. Air inlet; 2. First air distribution plate; 3. Jet plate; X, first direction; 30. Air outlet; 20. First air distribution hole; Y, second direction; Z, third direction; 4. Guide pipe; 5. Housing; 51. Peripheral side wall; 52. End wall; 10. Air inlet connector; 6. Second air distribution plate; 60. Second air distribution hole; 50. Air distribution chamber; 7. Isolation component; 500. Sub-cavity. Detailed Implementation

[0021] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the protection scope of this application.

[0022] In the description of this application, it should be understood that the terms "upstream," "downstream," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. In the description of this application, "multiple" means two or more, and "at least one" can refer to one, two, or more, unless otherwise explicitly specified. The terms "first," "second," and "third," etc., are only for the convenience of description and are used to name components or embodiments by number, and do not imply any order of importance between the components or embodiments.

[0023] It should also be noted that in the accompanying drawings of this application, the arrow marked X indicates the first direction X, the arrow marked Y indicates the second direction Y, and the arrow marked Z indicates the third direction Z. The introduction of the first direction X, the second direction Y, and the third direction Z in the description of this application is to more clearly define the structure and relative positional relationships of the components in the air intake device. In actual implementation, the second direction Y is generally a vertical direction or height direction, and the first direction X and the third direction Z are generally horizontal directions, intersecting each other. Optionally, the first direction X, the second direction Y, and the third direction Z are perpendicular to each other to optimize the layout of the air intake device.

[0024] It should also be noted that, Figure 6 , Figure 7 Different cross-sections of the intake device in one embodiment can be used to coordinate with Figure 8 or Figure 10 This constitutes a set of embodiments; Figure 6 , Figure 9 , Figure 7It can be a different cross-section of the intake device in another embodiment, in combination Figure 8 This constitutes another set of embodiments.

[0025] As a preamble to the embodiments of this application, chemical vapor deposition (CVD) is currently the primary method used for growing silicon carbide epitaxial layers. In epitaxial growth, the control of the gas flow field is a crucial factor affecting process uniformity. In related technologies, gas dispersion needs to be controlled to ensure uniform gas distribution through the reaction zone. However, after dispersion, the flow rate of the process gas entering the reaction chamber is significantly reduced, leading to excessive consumption of process gas upstream of the reaction chamber. Consequently, insufficient process gas is obtained downstream, resulting in uneven distribution of the process gas participating in the reaction above the substrate, thus affecting film quality.

[0026] In view of the above, this application provides an air intake device aimed at solving at least one of the above-mentioned technical problems.

[0027] Please see Figure 1 , Figure 2 and Figure 3 As shown in the illustration, this application discloses an air intake device applied to semiconductor processing equipment. The air intake device is used to introduce external gas into the reaction chamber of the semiconductor processing equipment. The air intake device includes an air intake component 1, a first gas equalization plate 2, and a jet plate 3. The external gas passes sequentially through the air intake component 1, the first gas equalization plate 2, and the jet plate 3, and is discharged along a first direction X. The air intake component 1 is used to connect to an external pipeline to introduce external gas. Multiple first gas equalization holes 20 are provided on the first gas equalization plate 2 to uniformly disperse the gas before it enters the jet plate 3, reducing concentrated gas flow and ensuring uniform gas entry into the reaction chamber. The jet plate 3 is provided with multiple air outlet holes 30. In the upstream and downstream directions of airflow, the first gas equalization plate 2 and the jet plate 3 are adjacent, and the first gas equalization plate 2 is provided with multiple first gas equalization holes 20. After being homogenized, the external gas is discharged through the air outlet holes 30 of the jet plate 3 and enters the reaction chamber. The air outlet holes 30 of the jet plate 3 can further rectify and distribute the gas, allowing it to enter the reaction chamber in a more uniform state. The total cross-sectional area of ​​the multiple first air distribution holes 20 is greater than the total cross-sectional area of ​​the multiple air outlet holes 30.

[0028] It is important to understand that, with the upstream and downstream directions of gas flow as a reference, the flow cross-sectional area of ​​the orifice refers to the projected area of ​​the orifice on a plane perpendicular to the upstream and downstream directions of gas flow. If the orifice is cylindrical, the cross-sectional area of ​​the first gas equalizing orifice 20 is equal to the area of ​​the first gas equalizing orifice 20 on the gas outlet side of the first gas equalizing plate 2. Similarly, the flow cross-sectional area of ​​the gas outlet orifice 30 refers to the area of ​​the gas outlet orifice 30 on the gas outlet side of the jet plate 3. If the orifice is a variable diameter orifice, the flow cross-sectional area is the projected area of ​​the narrowest section of the orifice on a plane perpendicular to the upstream and downstream directions of gas flow.

[0029] By limiting the total flow cross-sectional area of ​​the holes on the first gas equalizing plate 2 to satisfy the above relationship with the total flow cross-sectional area of ​​the holes on the jet plate 3, the gas flow velocity is relatively slow when passing through the first gas equalizing plate 2, allowing sufficient time and space for homogenization. When passing through the jet plate 3, the gas velocity increases due to the reduced flow cross-sectional area, allowing it to enter the reaction chamber in a concentrated and high-speed manner. This reduces velocity loss during gas transport, lessens gas loss on the upstream side of the reaction chamber, and ensures sufficient process gas is available on the downstream side as well. Through the synergistic effect of the first gas equalizing plate 2 and the jet plate 3, the process gas can be more evenly distributed within the reaction chamber, reducing film quality problems caused by uneven gas distribution and contributing to improved uniformity and consistency in the growth of epitaxial layers such as silicon carbide.

[0030] Please see Figure 2 and Figure 5 As shown, in some embodiments, the vent 30 and the first uniform air distribution hole 20 are offset in the first direction X. It should be understood that the first direction X refers to the direction in which the gas exits after passing through the vent 30 on the jet plate 3, i.e., the direction in which the air intake device enters the reaction chamber. The offset arrangement of the vent 30 and the first uniform air distribution hole 20 in the first direction X can be understood as the projection position of the vent 30 and the projection position of the first uniform air distribution hole 20 not coinciding in a plane perpendicular to the first direction X. With this arrangement, after the gas flows out from the first uniform air distribution hole 20, because there is no directly opposite vent 30 downstream, the flow velocity will naturally disperse and slow down, spreading outwards. The gas flowing out from different first uniform air distribution holes 20 collides and mixes with each other within the chamber, enhancing the secondary mixing of the gas. When the fully mixed gas exits from the offset vent 30, the amount of gas obtained by each vent 30 is more similar, avoiding local concentration or sparseness.

[0031] Please see Figure 2 and Figure 5As shown, in some embodiments, the first air distribution plate 2 includes multiple rows of first air distribution holes 20 arranged at intervals along the second direction Y. Each row of first air distribution holes 20 includes multiple first air distribution holes 20 arranged at intervals along the third direction Z. The second direction Y, the third direction Z and the first direction X intersect each other. Multiple air outlet holes 30 are arranged at intervals along the third direction Z. The orthographic projection of the air outlet holes 30 on the first air distribution plate 2 is located between two adjacent rows of first air distribution holes 20. It is important to understand that the multiple first gas equalization holes 20 are arranged in an array on the first gas equalization plate 2. Through projection, the outlet holes 30 on the jet plate 3 are misaligned with the first gas equalization holes 20 in the second direction Y. Gas discharged from adjacent rows of first gas equalization holes 20 diffuses in the second direction Y and naturally converges and mixes towards the height of the outlet holes 30, eliminating local concentration deviations in the second direction Y. Simultaneously, the first gas equalization holes 20 are spaced apart along the third direction Z, enabling simultaneous uniform dispersion of gas in the horizontal dimension. The outlet holes 30, also spaced apart along the third direction Z, guide the flow path of the process gas to cover the base surface. Furthermore, the outlet holes 30 are closer to the center of the jet plate 3 in the second direction Y, causing the gas to concentrate in the second direction Y. After discharge, the gas flows directly to the core reaction zone above the base along the shortest path, without needing to deviate towards the inner wall in the height direction, reducing the natural attenuation of kinetic energy caused by excessively long paths during gas transmission.

[0032] Please see Figure 11As shown, in some embodiments, the air intake device includes a guide pipe 4, which extends along the first direction X and is adjacent to the side of the jet plate 3 facing away from the first air distribution plate 2. The guide pipe 4 is used to directionally constrain the airflow, forming a channel-like constraint on the gas discharged from the air outlet 30, thereby reducing gas diffusion loss. On a projection plane perpendicular to the first direction X, the orthographic projection of the air outlet 30 is located within the orthographic projection of the guide pipe 4, and satisfies: d ≥ 1 / 3h; where d is the minimum distance between the orthographic projection of the air outlet 30 and the orthographic projection of the guide pipe 4 in the second direction Y, and h is the internal dimension of the guide pipe 4 in the second direction Y, which is perpendicular to the first direction X. It is important to understand that the minimum spacing refers to the shortest distance between the orthographic projection of the outlet 30 and the orthographic projection of the inner wall of the guide tube 4. By limiting d and h to satisfy the above relationship, it is ensured that the outlet 30 and the inner wall of the guide tube 4 maintain a sufficient distance in the second direction Y. This allows most of the gas flow after it exits the outlet 30 to concentrate and flow along the middle region of the guide tube 4 where the flow resistance is relatively low, rather than directly impacting the inner wall. This flow process can maintain a relatively high local speed zone, allowing some of the gas inside the tube to retain a higher momentum. If d is smaller, the gas is more prone to viscous stagnation or eddies due to its proximity to the inner wall, resulting in greater momentum loss. If d is larger, the outlet 30 is closer to the middle position of the guide tube 4 in the second direction Y, which can control the mainstream gas region in the middle region of the cross-section of the guide tube 4 away from the inner wall, reducing the kinetic energy loss caused by friction with the inner wall, and allowing at least some of the gas to flow out of the guide tube 4 and into the reaction chamber with higher momentum. When d=1 / 3h, it ensures the space required for gas diffusion within the guide tube 4, while also preventing insufficient convergence at the upstream end of the guide tube 4 and avoiding excessive homogenization in the second direction Y.

[0033] Please see Figure 1 , Figure 7 and Figure 8 As shown, or see [link to relevant documentation]. Figure 4 , Figure 7 and Figure 10 As shown, in some embodiments, the diameter of the outlet hole 30 is the same as the diameter of the first uniform air hole 20, and the number of outlet holes 30 is less than the number of first uniform air holes 20. Under the premise that the diameter of the outlet hole 30 is the same as the diameter of the first uniform air hole 20, by controlling the number of outlet holes 30 to be less than the number of first uniform air holes 20, the fewer the number of outlet holes 30, the more each outlet hole 30 needs to receive gas from multiple first uniform air holes 20. After the gas flows out from multiple first uniform air holes 20, it will naturally converge, collide, and mix before entering the same outlet hole 30. The slight differences in the airflow from a single hole that might have existed are neutralized, making the final gas composition ejected from the outlet hole 30 more uniform. This convergence effect of multiple inlets and one outlet is equivalent to adding a secondary mixing process before the jet plate 3, further improving gas uniformity.

[0034] In some embodiments, the number of vent holes 30 is the same as the number of first gas equalizing holes 20, and the diameter of the vent holes 30 is smaller than the diameter of the first gas equalizing holes 20 (not shown). The same number of vent holes 30 and first gas equalizing holes 20 forms a one-to-one spatial correspondence, ensuring the symmetrical distribution of gas in two-dimensional space and providing a more regular airflow field for the reaction chamber. The smaller diameter of the vent holes 30 allows for more precise control of local flow velocity, better adapting to the process requirements at different locations within the reaction chamber. The smaller diameter also allows the gas to achieve a higher injection velocity at the vent holes 30, effectively overcoming gas resistance within the reaction chamber and diffusing further downstream, ensuring sufficient reactive gas is available even at the end of the reaction chamber.

[0035] Please see Figure 2 and Figure 3 As shown, in some embodiments, the air intake device includes a housing 5, which includes a peripheral sidewall 51 and an end wall 52 connected to each other. The peripheral sidewall 51 extends along a first direction X, and the end wall 52 covers one end of the peripheral sidewall 51 in the first direction X. A first air distribution plate 2 is disposed inside the housing 5 and connected to the peripheral sidewall 51. A jet plate 3 covers the other end of the peripheral sidewall 51 in the first direction X and is detachably connected to the peripheral sidewall 51. The air intake component 1 includes an air intake connector 10, which is disposed on the end wall 52 or the peripheral sidewall 51. It should be understood that the shell 5 is a closed chamber formed by the peripheral sidewall 51 extending along the first direction X, the end wall 52 covering one end, and the jet plate 3 covering the other end. This provides a fully constrained path for gas flow. After the gas enters from the inlet joint 10, it is completely confined inside the shell 5 and can only flow along the preset path of the inlet 1, the first gas equalization plate 2, and the jet plate 3. This avoids gas leakage or disorderly diffusion to the outside of the shell 5, ensuring that the process gas participates in the gas equalization and jetting process, and significantly improving the gas utilization rate. The closed chamber can buffer the pressure fluctuations during gas intake, so that the gas forms a stable initial flow field before reaching the first gas equalization plate 2, providing a stable precondition for the uniform dispersion of the first gas equalization plate 2 and reducing the gas equalization deviation caused by pressure fluctuations.

[0036] As a component that directly injects gas into the reaction chamber, the jet plate 3's outlet 30 is prone to blockage due to gas impurities, requiring regular cleaning or replacement. The detachable connection between the jet plate 3 and the peripheral wall 51 greatly simplifies the cleaning, maintenance, or replacement process, reducing equipment downtime. Furthermore, a suitable jet plate 3 can be quickly replaced according to different process requirements without adjusting other components such as the housing 5 and the first gas equalization plate 2, allowing the gas inlet device to flexibly adapt to different epitaxial growth processes and expanding the equipment's process compatibility.

[0037] It should be understood that, depending on the overall structure of the semiconductor processing equipment, air can be introduced through the end wall 52 or the peripheral side wall 51 to avoid equipment layout conflicts caused by the limitation of the air intake direction. When air is introduced through the end wall 52, the gas can directly rush towards the first gas equalization plate 2 along the first direction X, which is suitable for the gas equalization requirement that requires uniform frontal impact. When air is introduced through the peripheral side wall 51 (not shown), the gas can diffuse along the circumferential direction and then flow towards the first gas equalization plate 2, reducing local airflow concentration.

[0038] In some embodiments, the first gas equalization plate 2 is disposed inside the housing 5 and welded to the peripheral sidewall 51; in other embodiments, the first gas equalization plate 2 and the peripheral sidewall 51 are integrally formed; in some embodiments, the peripheral sidewall 51 and the end wall 52 are integrally formed structures.

[0039] Please see Figure 9 As shown, in some embodiments, the air intake device further includes a second air distribution plate 6, which is disposed inside the housing 5 and connected to the peripheral sidewall 51. The second air distribution plate 6 is located upstream of the first air distribution plate 2, and has a plurality of second air distribution holes 60. The total flow cross-sectional area of ​​the first air distribution holes 20 on the first air distribution plate 2 is greater than the total flow cross-sectional area of ​​the second air distribution holes 60 on the second air distribution plate 6. It should be understood that the external gas passes sequentially through the air intake component 1, the second air distribution plate 6, the first air distribution plate 2, and the jet plate 3, and is discharged along the first direction X. After the gas enters the housing 5 through the air intake component 1, it first passes through the second air distribution plate 6 and is dispersed into multiple independent airflows, breaking the concentration of the initial airflow. Because the total flow cross-sectional area of ​​the second air distribution plate 6 is relatively small, the gas velocity is relatively high when it flows through it, and it can quickly penetrate the plate and diffuse into the subsequent chambers. When the gas passes through the first air distribution plate 2, the flow cross-sectional area increases and the flow velocity decreases, providing the gas with a more sufficient residence time. Multiple streams of airflow dispersed from the second gas equalization plate 6 collide and mix thoroughly in the upstream chamber of the first gas equalization plate 2, further improving the uniformity of the gas.

[0040] In some embodiments, the air intake device further includes a second air equalization plate 6, which is disposed within the housing 5 and connected to the peripheral sidewall 51. The second air equalization plate 6 is located upstream of the first air equalization plate 2, and has a plurality of second air equalization holes 60. The number of second air equalization plates 6 is multiple (not shown), and they are arranged at intervals along the upstream and downstream direction of airflow. In two adjacent second air equalization plates 6, the total flow cross-sectional area of ​​the second air equalization holes 60 on the downstream second air equalization plate 6 is greater than the total flow cross-sectional area of ​​the second air equalization holes 60 on the upstream second air equalization plate 6. It should be understood that by forming a gradient structure with progressively increasing flow cross-sectional areas through multiple second air equalization plates 6, the upstream second air equalization plate 6 has the smallest total flow cross-sectional area, used to decompose the original concentrated airflow into a moderate number of airflow bundles, initially eliminating large-scale turbulence; the downstream second air equalization plate 6 has the largest total flow cross-sectional area, reducing the flow velocity through a larger flow area, allowing the gas to complete the final homogenization under low disturbance conditions, thus improving the air equalization accuracy. The total cross-sectional area of ​​the multi-stage second gas equalization plate 6 increases step by step, so that the gas velocity presents a gradient change of slow decrease, reducing local turbulence caused by sudden changes in velocity, and reducing kinetic energy loss. The velocity decrease of each stage is small, and the gas can be mixed in a more stable state. Finally, when it reaches the first gas equalization plate 2, the flow field stability is significantly improved.

[0041] Please see Figure 3 , Figure 6 , Figure 7 and Figure 9 As shown, in some embodiments, the air intake device includes multiple isolation members 7 and multiple air distribution chambers 50. These chambers 50 are arranged in the upstream and downstream directions of the airflow. Each air distribution chamber 50 is provided with an isolation member 7, which divides the air distribution chamber 50 into multiple independent sub-chambers 500. The sub-chambers 500 are arranged along the third direction Z, and the sub-chambers 500 of adjacent air distribution chambers 50 are correspondingly arranged one-to-one. There are multiple air intake connectors 10, and the multiple sub-chambers 500 of the upstream air distribution chamber 50 are respectively connected to at least one air intake connector 10. It should be understood that by dividing the air distribution chamber 50 into multiple independent sub-chambers 500 and arranging them along the third direction Z, with each upstream sub-chamber 500 corresponding to an air intake connector 10, each sub-chamber 500 can be independently supplied with air. This allows for independent adjustment of the air supply volume and composition of each sub-chamber 500, adjusting the concentration deviation of the center and edge concentrations based on the actual process requirements. Furthermore, independent air intake supports lateral differential process compensation. By individually adjusting the air intake parameters of the corresponding sub-cavity 500, point-to-point compensation can be achieved, thereby enabling targeted optimization of reaction conditions at various lateral positions and making the epitaxial layer growth state of the entire wafer surface more consistent.

[0042] When there is only one second air-distributing plate 6, the end wall 52 and the side wall 51 of the second air-distributing plate 6 form an air-distributing cavity 50; the second air-distributing plate 6 and the side wall 51 of the first air-distributing plate 2 form an air-distributing cavity 50; and the first air-distributing plate 2 and the side wall 51 of the jet plate 3 form an air-distributing cavity 50. When there are multiple second air-distributing plates 6, the end wall 52 and the side wall 51 of the adjacent second air-distributing plate 6 form an air-distributing cavity 50; two adjacent second air-distributing plates 6 and their side walls 51 form an air-distributing cavity 50; the first air-distributing plate 2 and its adjacent second air-distributing plate 6 and their side walls 51 form an air-distributing cavity 50; and the first air-distributing plate 2 and its jet plate 3 and their side walls 51 form an air-distributing cavity 50. The number of stages of the air-distributing cavity 50 can be flexibly adjusted according to the number of second air-distributing plates 6 to form a customizable air-distributing intensity.

[0043] Please see Figure 3 As shown, in some embodiments, multiple air-uniforming chambers 50 are divided into multiple levels according to the upstream and downstream direction of airflow. In two adjacent levels, the volume ratio of multiple sub-cavities 500 in the air-uniforming chamber 50 of the previous level is consistent with the volume ratio of multiple sub-cavities 500 in the air-uniforming chamber 50 of the next level. It should be understood that the volume ratio of the sub-cavities 500 remains consistent in two adjacent levels of air-uniforming chambers 50. For example, if the volume ratio of the three sub-cavities 500 in the previous level is 1:1.2:1, the corresponding volume ratio of the sub-cavities 500 in the next level is also 1:1.2:1. By setting the volume ratio of multiple sub-cavities 500 in each level of air-uniforming chamber 50 to be the same, the pressure distribution within the sub-cavities 500 can be optimized, reducing local eddies or airflow impacts caused by abrupt changes in volume, ensuring that the flow field is always in a stable state, and providing a low-disturbance environment for step-by-step air uniformity.

[0044] This application also provides a semiconductor processing apparatus, including the air intake device as described in the above embodiments. Therefore, it can possess all the technical features and effects of the aforementioned air intake device, which will not be repeated here.

[0045] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0046] The embodiments, implementation methods, and related technical features of this application can be combined and substituted for each other without conflict.

[0047] The above are merely preferred embodiments of this application and are not intended to limit this application in any way. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of this application without departing from the scope of the technical solution of this application shall still fall within the scope of the technical solution of this application.

Claims

1. An air intake device, characterized in that, Applied to semiconductor processing equipment, the air intake device is used to introduce external gas into the reaction chamber of the semiconductor processing equipment. The air intake device includes an air intake component (1), a first gas equalization plate (2) and a jet plate (3). The external gas passes through the air intake component (1), the first gas equalization plate (2) and the jet plate (3) in sequence and is discharged along the first direction (X). The jet plate (3) is provided with a plurality of air outlets (30). In the upstream and downstream directions of airflow, the first air distribution plate (2) is adjacent to the jet plate (3). The first air distribution plate (2) is provided with a plurality of first air distribution holes (20). The total cross-sectional area of ​​the plurality of first air distribution holes (20) is greater than the total cross-sectional area of ​​the plurality of air outlet holes (30).

2. The air intake device according to claim 1, characterized in that, The air outlet (30) and the first air distribution hole (20) are offset in the first direction (X).

3. The air intake device according to claim 2, characterized in that, The first air distribution plate (2) includes multiple rows of first air distribution holes (20) spaced apart along the second direction (Y). Each row of first air distribution holes (20) includes multiple first air distribution holes (20) spaced apart along the third direction (Z). The second direction (Y), the third direction (Z) and the first direction (X) intersect each other. The plurality of air outlets (30) are arranged at intervals along the third direction (Z), and the orthographic projection of the air outlets (30) on the first air distribution plate (2) is located between two adjacent rows of the first air distribution holes (20).

4. The air intake device according to claim 1, characterized in that, The air intake device includes a guide pipe (4), which extends along the first direction (X) and is adjacent to the side of the jet plate (3) away from the first air distribution plate (2). On a projection plane perpendicular to the first direction (X), the orthographic projection of the air outlet (30) lies within the orthographic projection of the guide pipe (4), and satisfies: d≥1 / 3h; Wherein, d is the minimum distance between the orthographic projection of the air outlet (30) and the orthographic projection of the guide tube (4) in the second direction (Y), and h is the internal dimension of the guide tube (4) in the second direction (Y), which is perpendicular to the first direction (X).

5. The air intake device according to any one of claims 1 to 4, characterized in that, The diameter of the air outlet (30) is the same as the diameter of the first air distribution hole (20), and the number of the air outlet (30) is less than the number of the first air distribution hole (20). Alternatively, the number of air outlets (30) is the same as the number of the first air distribution holes (20), and the diameter of the air outlets (30) is smaller than the diameter of the first air distribution holes (20).

6. The air intake device according to claim 1, characterized in that, The air intake device includes a housing (5), which includes a peripheral sidewall (51) and an end wall (52) connected to each other. The peripheral sidewall (51) extends along the first direction (X), and the end wall (52) covers one end of the peripheral sidewall (51) in the first direction (X). The first air distribution plate (2) is disposed inside the housing (5) and connected to the peripheral sidewall (51). The jet plate (3) covers the other end of the peripheral sidewall (51) in the first direction (X) and is detachably connected to the peripheral sidewall (51). The air intake component (1) includes an air intake connector (10), which is disposed on the end wall (52) or the peripheral side wall (51).

7. The air intake device according to claim 6, characterized in that, The air intake device also includes a second air distribution plate (6), which is disposed inside the housing (5) and connected to the peripheral sidewall (51). The second air distribution plate (6) is located upstream of the first air distribution plate (2), and the second air distribution plate (6) is provided with a plurality of second air distribution holes (60). The total cross-sectional area of ​​the first air equalization holes (20) on the first air equalization plate (2) is greater than the total cross-sectional area of ​​the second air equalization holes (60) on the second air equalization plate (6); And / or, there are multiple second air equalization plates (6), which are arranged at intervals along the upstream and downstream direction of airflow. In two adjacent second air equalization plates (6), the total flow cross-sectional area of ​​the second air equalization holes (60) on the downstream second air equalization plate (6) is greater than the total flow cross-sectional area of ​​the second air equalization holes (60) on the upstream second air equalization plate (6).

8. The air intake device according to claim 6, characterized in that, The air intake device includes multiple isolation components (7), and the air intake device has multiple air equalization chambers (50). The multiple air equalization chambers (50) are arranged in the upstream and downstream directions of airflow. Each air equalization chamber (50) is provided with the isolation component (7). The isolation component (7) divides the air equalization chamber (50) into multiple independent sub-chambers (500). The sub-chambers (500) are arranged along the third direction (Z). The multiple sub-chambers (500) of two adjacent air equalization chambers (50) are arranged in a one-to-one correspondence. The number of air inlet connectors (10) is multiple, and the multiple sub-cavities (500) of the upstream air distribution chamber (50) are respectively connected to at least one air inlet connector (10).

9. The air intake device according to claim 8, characterized in that, The plurality of air-uniforming chambers (50) are divided into multiple levels according to the upstream and downstream direction of airflow. In two adjacent levels, the volume ratio of the plurality of sub-chambers (500) of the air-uniforming chamber (50) in the previous level is the same as the volume ratio of the plurality of sub-chambers (500) of the air-uniforming chamber (50) in the next level.

10. A semiconductor processing apparatus, characterized in that, Includes the air intake device as described in any one of claims 1 to 9.

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