High-stability sapphire crystal growth furnace

Abstract

The utility model discloses a high stability sapphire crystal growth furnace, specifically relates to sapphire crystal production technical field, including furnace frame, one side fixed of furnace frame is equipped with growth furnace device, the top fixed mounting of furnace frame is equipped with mounting support, the top fixed mounting of mounting support is equipped with two linear electric tracks, the drive end fixed mounting of linear electric track is equipped with auxiliary device, the growth furnace device includes furnace outer tube, the furnace outer tube fixedly connected in one side of furnace frame, the top hinged mounting of furnace outer tube is equipped with the cylinder cover, the inner wall top of furnace outer tube is fixedly connected and is equipped with the inside support ring, the middle fixedly connected of inside support ring is equipped with cooling outer tube, the inboard fixed mounting of furnace outer tube is equipped with heating element, and this sapphire crystal growth furnace is positioned to the growth crucible through using auxiliary device and carries out positioning auxiliary installation, increases the stability of growth crucible installation, and simple and stable operation carries out stable growth to the raw material in the growth crucible, and the growth quality of sapphire crystal is promoted.

Description

Technical Field

[0001] This utility model relates to the field of sapphire crystal production technology, specifically a high-stability sapphire crystal growth furnace. Background Technology

[0002] Sapphire single crystals are widely used in high-end technology fields such as LED semiconductor lighting, consumer electronics, optical windows, medical devices, and aerospace due to their excellent optical properties, high strength, high hardness, high temperature resistance, corrosion resistance, and good chemical stability. Among them, crystal growth technology based on heat exchange method or bubble growth method is the mainstream method for preparing large-size, high-quality sapphire crystals. Sapphire crystal growth furnace is required in the production of sapphire crystals. Traditional sapphire crystal growth furnaces still have some problems in use: the crucibles inside the furnace need to be manually handled for loading, and manual loading is prone to errors, which can easily cause installation deviations. This will affect the heating and heat dissipation stability during subsequent sapphire crystal growth, thus affecting the overall growth quality of the sapphire crystal. To address these issues, we propose a high-stability sapphire crystal growth furnace. Utility Model Content

[0003] The purpose of this invention is to provide a highly stable sapphire crystal growth furnace to solve the problems mentioned in the background art.

[0004] To achieve the above objectives, the present invention provides the following technical solution: a high-stability sapphire crystal growth furnace, comprising a furnace frame, a growth furnace device fixedly mounted on one side of the furnace frame, an installation bracket fixedly mounted on the top of the furnace frame, two linear electric rails fixedly mounted on the top of the installation bracket, and an auxiliary device fixedly mounted on the driving end of the linear electric rails. The growth furnace device includes an outer cylinder, which is fixedly fastened to one side of the furnace frame. A cylinder cover is installed on the top hinge of the outer cylinder. An inner support ring is fixedly fastened to the top of the inner wall of the outer cylinder. A cooling outer cylinder is fixedly fastened to the middle of the inner support ring. A heating element is fixedly installed on the inner side of the outer cylinder. A growth crucible is provided in the cooling outer cylinder. A positioning groove is opened on the side of the growth crucible. The top of the cooling outer cylinder is movably fastened to the positioning groove. An inner sealing cover is movably fastened to the top of the growth crucible. A vacuum pump is fixedly installed on the inner sealing cover.

[0005] Preferably, a plurality of positioning protrusions are fixedly installed on the inner wall of the cylinder cover, and the ends of the positioning protrusions are in contact with the upper surface of the inner cover.

[0006] Preferably, a first handle is fixedly installed at the top of the growth crucible, and a second handle is fixedly installed at the top of the inner cover.

[0007] Preferably, the auxiliary device includes a mounting frame, which is fixedly mounted on the drive end of the linear electric rail. A rotating frame is fixedly mounted on both ends of the mounting frame, and a winding frame is rotatably mounted in the rotating frame. A common drive shaft is fixedly mounted on the shaft ends of the two winding frames. A rope is wound around the winding frame, and a hook is fixedly mounted on the bottom end of the rope. The hook is used in conjunction with a first handle and a second handle.

[0008] Preferably, a drive motor is fixedly installed on the side end of one of the rotating frames, and the drive end of the drive motor is fixedly installed on the shaft end of the corresponding winding frame.

[0009] Preferably, the top of the furnace frame is provided as a sunken structure on the side away from the growth furnace device, and a first placement seat and a second placement seat are fixedly installed on the top of the sunken structure.

[0010] Compared with the prior art, the beneficial effects of this utility model are as follows: 1. This sapphire crystal growth furnace uses an auxiliary device to position and assist in the installation of the growth crucible, increasing the stability of the crucible installation. It is simple and stable to operate, and allows for stable growth of the raw materials inside the crucible, thereby improving the growth quality of the sapphire crystal.

[0011] 2. This sapphire crystal growth furnace is equipped with an auxiliary device to assist in the installation and disassembly of the growth crucible and inner cover, making operation simple and convenient, and ensuring high installation accuracy. Attached Figure Description

[0012] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0013] Figure 1 This is a schematic diagram of the structure of this utility model.

[0014] Figure 2 This is a schematic diagram of the growth furnace device in this utility model.

[0015] Figure 3 This is a partial structural connection diagram of the growth furnace device in this utility model.

[0016] Figure 4 This utility model Figure 3 Enlarged view of point A in the middle.

[0017] Figure 5 This is a schematic diagram of the growth crucible in this utility model.

[0018] Figure 6 This is a schematic diagram of the auxiliary device in this utility model.

[0019] In the diagram: 1. Furnace frame; 2. Growth furnace device; 3. Mounting bracket; 4. Linear electric rail; 5. Auxiliary device; 6. First placement seat; 7. Second placement seat; 21. Outer furnace cylinder; 211. Heating element; 22. Cylinder cover; 221. Positioning protrusion; 23. Inner support ring; 24. Cooling outer cylinder; 25. Growth crucible; 251. First handle; 252. Positioning groove; 26. Inner cover; 261. Second handle; 27. Vacuum pump; 51. Mounting crossbeam; 52. Rotating frame; 53. Rewinding frame; 531. Common drive shaft; 54. Rope; 55. Hook; 56. Drive motor. Detailed Implementation

[0020] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0021] Example: Figure 1-6 As shown, this utility model provides a high-stability sapphire crystal growth furnace, including a furnace frame 1, a growth furnace device 2 fixedly mounted on one side of the furnace frame 1, an installation bracket 3 fixedly mounted on the top of the furnace frame 1, two linear electric rails 4 fixedly mounted on the top of the installation bracket 3, and an auxiliary device 5 fixedly mounted on the driving end of the linear electric rails 4. The auxiliary device 5 is driven to slide by turning on the linear electric rails 4. The growth furnace device 2 includes an outer cylinder 21, which is fixedly fastened to one side of the furnace frame 1. A cylinder cover 22 is hinged at the top of the outer cylinder 21. An inner support ring 23 is fixedly fastened to the top of the inner wall of the outer cylinder 21, and a cooling outer cylinder 24 is fixedly fastened to the middle of the inner support ring 23. A heating element 211 is fixedly installed on the inner side of the outer cylinder 21. A growth crucible 25 is provided in the cooling outer cylinder 24, and a positioning groove 252 is opened on the side of the growth crucible 25. The top of the cooling outer cylinder 24 is movably fastened into the positioning groove 252. The growth crucible 25 is positioned and installed to facilitate disassembly, replacement, and maintenance. The top of the growth crucible 25 is equipped with an inner cover 26, on which a vacuum pump 27 is fixedly installed. The raw material for sapphire crystal growth is placed inside the growth crucible 25, and the growth crucible 25 is positioned and installed. Then, the inner cover 26 is installed on the top of the growth crucible 25, and the vacuum pump 27 is turned on to evacuate the growth crucible 25, thereby stabilizing the growth of the raw material inside the growth crucible 25.

[0022] Multiple positioning protrusions 221 are fixedly installed on the inner wall of the cylinder cover 22. The ends of the positioning protrusions 221 are in contact with the upper surface of the inner cover 26. By setting multiple positioning protrusions 221, after the cylinder cover 22 is closed, the ends of the positioning protrusions 221 are in contact with the upper surface of the inner cover 26, and the inner cover 26 is positioned against the inner cover 26.

[0023] A first handle 251 is fixedly installed on the top of the growth crucible 25, and a second handle 261 is fixedly installed on the top of the inner cover 26.

[0024] The auxiliary device 5 includes a mounting frame 51, which is fixedly mounted on the drive end of the linear electric rail 4. Rotating frames 52 are fixedly mounted on both ends of the mounting frame 51. Rewinding frames 53 are rotatably mounted within the rotating frames 52. A common drive shaft 531 is fixedly mounted on the shaft ends of the two rewinding frames 53. A rope 54 is wound around the rewinding frame 53, and a hook 55 is fixedly mounted on the bottom end of the rope 54. A drive motor 56 is fixedly mounted on the side end of one of the rotating frames 52. The drive end of the drive motor 56 is fixedly mounted to the shaft end of the corresponding rewinding frame 53. By activating the drive motor 56 and connecting it with the common drive shaft 531, the two rewinding frames 53 are controlled to rotate synchronously, the rope 54 is unwound, and the hook 55 descends. Conversely, by activating the drive motor 56 and connecting it with the common drive shaft 531, the two rewinding frames 53 are controlled to rotate synchronously in opposite directions, the rope 54 is wound up, and the hook 55 rises.

[0025] The hook 55 is used in conjunction with the first handle 251 and the second handle 261 to make it convenient for the hook 55 to be hung on the first handle 251 or the second handle 261.

[0026] The top of the furnace frame 1 is set as a sunken structure on the side away from the growth furnace device 2. The top of the sunken structure is fixedly installed with a first placement seat 6 and a second placement seat 7. The first placement seat 6 and the second placement seat 7 are used to place the growth crucible 25 and the inner cover 26, respectively.

[0027] Working principle: In the initial state, the growth crucible 25 is placed on the first placement seat 6, the inner cover 26 is placed on the second placement seat 7, and the raw material for sapphire crystal growth is placed in the growth crucible 25; Subsequently, the two linear electric rails 4 are activated to drive the auxiliary device 5 to slide horizontally, moving the auxiliary device 5 above the growth crucible 25. Then, the drive motor 56 is activated, and in conjunction with the connection of the common drive shaft 531, the two winding frames 53 are controlled to rotate synchronously, the rope 54 is unwound, and the hook 55 is lowered and hooked onto the first handle 251. Then, the drive motor 56 is activated, and in conjunction with the connection of the common drive shaft 531, the two winding frames 53 are controlled to rotate synchronously in opposite directions, the rope 54 is wound up, and the hook 55 is raised, thereby controlling the growth crucible 25 to move upward, detach from the first placement seat 6, and controlling the auxiliary device 5 to move again, moving the growth crucible 25 above the furnace outer cylinder 21, and slowly lowering the growth crucible 25, so that the growth crucible 25 is slowly placed inside the furnace outer cylinder 21, and the top of the cooling outer cylinder 24 is movably engaged in the positioning groove 252, performing auxiliary positioning and installation of the growth crucible 25. This is simple, convenient, and has high installation accuracy. Subsequently, the hook 55 is disengaged from the first handle 251 and the hook 55 is moved upward. Then, the auxiliary device 5 is moved again to the top of the second placement seat 7, and the hook 55 is hung on the second handle 261. Then, the hook 55 is driven to rise, thereby controlling the inner cover 26 to move upward and controlling the inner cover 26 to move to the top of the furnace outer cylinder 21. The inner cover 26 is then slowly lowered and installed on the top of the growth crucible 25. The vacuum pump 27 is turned on to evacuate the growth crucible 25 and stabilize the growth of the raw materials inside the growth crucible 25. After the sapphire crystal growth is completed, open the cylinder cover 22 and use the auxiliary device 5 to remove the inner cover 26 and the growth crucible 25 from the outer cylinder 21 in sequence, and place them on the second placement seat 7 and the first placement seat 6 respectively. The operation is simple and stable, which improves the growth quality of the sapphire crystal.

[0028] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A high-stability sapphire crystal growth furnace, comprising a furnace rack (1), characterized in that: A growth furnace device (2) is fixedly mounted on one side of the furnace frame (1), and an installation bracket (3) is fixedly mounted on the top of the furnace frame (1). Two linear electric rails (4) are fixedly mounted on the top of the installation bracket (3), and an auxiliary device (5) is fixedly mounted on the driving end of the linear electric rails (4). The growth furnace device (2) includes an outer cylinder (21), which is fixedly attached to one side of the furnace frame (1). A cylinder cover (22) is installed on the top hinge of the outer cylinder (21). An inner support ring (23) is fixedly attached to the top of the inner wall of the outer cylinder (21). A cooling outer cylinder (24) is fixedly attached to the middle of the inner support ring (23). A heating element (211) is fixedly installed on the inner side of the outer cylinder (21). A growth crucible (25) is provided in the cooling outer cylinder (24). A positioning groove (252) is opened on the side of the growth crucible (25). The top of the cooling outer cylinder (24) is movably attached to the positioning groove (252). An inner sealing cover (26) is movably attached to the top of the growth crucible (25). A vacuum pump (27) is fixedly installed on the inner sealing cover (26).

2. The high-stability sapphire crystal growth furnace according to claim 1, characterized in that: The inner wall of the cylinder cover (22) is fixedly installed with a plurality of positioning protrusions (221), the ends of which are in contact with the upper surface of the inner cover (26).

3. The high-stability sapphire crystal growth furnace according to claim 1, characterized in that: The top of the growth crucible (25) is fixedly equipped with a first handle (251), and the top of the inner cover (26) is fixedly equipped with a second handle (261).

4. The high-stability sapphire crystal growth furnace according to claim 3, characterized in that: The auxiliary device (5) includes a mounting frame (51), which is fixedly mounted on the drive end of the linear electric rail (4). A rotating frame (52) is fixedly mounted on both ends of the mounting frame (51). A winding frame (53) is rotatably mounted in the rotating frame (52). A common drive shaft (531) is fixedly mounted on the shaft ends of the two winding frames (53). A rope (54) is wound on the winding frame (53). A hook (55) is fixedly mounted on the bottom end of the rope (54). The hook (55) is used in conjunction with the first handle (251) and the second handle (261).

5. A high-stability sapphire crystal growth furnace according to claim 4, characterized in that: A drive motor (56) is fixedly installed on the side end of one of the rotating frames (52), and the drive end of the drive motor (56) is fixedly installed on the shaft end of the corresponding winding frame (53).

6. The high-stability sapphire crystal growth furnace according to claim 1, characterized in that: The top of the furnace frame (1) is provided with a sunken structure on the side away from the growth furnace device (2), and a first placement seat (6) and a second placement seat (7) are fixedly installed on the top of the sunken structure.

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