Treatment device for semiconductor process off-gases
Patent Information
- Application Number
- CN202522233815.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-22
- Publication Date
- 2026-09-25
- Estimated Expiration
- 2035-10-22
AI Technical Summary
[0004]本实用新型提供一种半导体工艺废气的处理装置,用以解决现有技术中常温压缩空气会吸收部分反应热量,致使高温区域温度降低或温度分布不均匀的缺陷
[0015]本实用新型提供的半导体工艺废气的处理装置,通过设置换热板,可将燃烧产生的热气体的热量吸收,以对压缩空气进行预热,提高了压缩空气的温度,进而提高了废气燃烧时的效率以及燃烧室内的温度,保证了废气氧化还原的效率和稳定性。
Smart Images

Figure CN224801681U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to a device for treating semiconductor process waste gas. Background Technology
[0002] In semiconductor manufacturing processes, various process gases are typically used. These gases must undergo combustion treatment to render them harmless before being emitted. Current technologies often employ natural gas as fuel and compressed air as a combustion aid, mixing and burning them in a burner to create a high-temperature flame, thus generating a stable high-temperature environment in the combustion zone. Once introduced into this high-temperature zone, the process waste gas undergoes an oxidation-reduction reaction to meet the corresponding waste gas treatment requirements.
[0003] However, current semiconductor waste gas treatment devices typically use compressed air at room temperature. During combustion, this room-temperature compressed air absorbs some of the heat from the reaction, causing some heat to be carried away from the high-temperature areas. This results in an overall decrease in temperature or uneven temperature distribution in the high-temperature zones. This problem affects the efficiency and stability of the oxidation-reduction reaction in the waste gas, hindering the achievement of efficient and uniform waste gas treatment. Utility Model Content
[0004] This invention provides a device for treating semiconductor process waste gas, which solves the defect in the prior art where room temperature compressed air absorbs some of the reaction heat, resulting in a decrease in temperature in high-temperature areas or uneven temperature distribution.
[0005] This utility model provides a device for treating semiconductor process waste gas, comprising: a combustion mechanism having a mixing chamber and a combustion chamber, the mixing chamber being connected to the combustion chamber, wherein natural gas and compressed air are mixed in the mixing chamber, and the mixed gas is burned in the combustion chamber to generate hot gas; and a heat exchange plate being connected to the combustion chamber, the mixing chamber, and a room temperature compressed air pipeline, wherein the hot gas and the room temperature compressed air exchange heat in the heat exchange plate to form hot compressed air, and the hot compressed air enters the mixing chamber.
[0006] The semiconductor process waste gas treatment device provided by this utility model further includes a cooling mechanism connected to the heat exchange plate, and the cooling mechanism is used to perform secondary cooling on the cooled gas.
[0007] According to the present invention, a semiconductor process waste gas treatment device is provided, wherein the heat exchange plate is provided with a first inlet, a first flow channel and a first outlet connected in sequence, the first inlet is connected to the ambient temperature compressed air pipeline and the first outlet is connected to the mixing chamber through a first pipeline; the heat exchange plate is also provided with a second inlet, a second flow channel and a second outlet connected in sequence, the second inlet is connected to the combustion chamber through a second pipeline and the second outlet is connected to the cooling mechanism through a third pipeline.
[0008] According to the present invention, a semiconductor process waste gas treatment device is provided, wherein there are multiple heat exchange plates, which are stacked sequentially; multiple first inlets are sequentially connected to form a first inlet channel, and multiple first outlets are sequentially connected to form a first outlet channel, wherein the two ends of each first channel are respectively connected to the first inlet channel and the first outlet channel.
[0009] The semiconductor process waste gas treatment device provided by this utility model further includes a first flow sensor, which is disposed in the first pipeline and is used to detect the flow rate of the hot compressed air.
[0010] According to the present invention, a semiconductor process waste gas treatment device further includes a fan, which is disposed in the second pipeline and is used to guide the hot gas to the heat exchange plate.
[0011] According to the present invention, a semiconductor process waste gas treatment device is provided, wherein the combustion mechanism includes: a torch connected to the heat exchange plate, the torch also being connected to a natural gas pipeline, the torch being configured as the mixing chamber; and a reaction chamber connected to the torch, the reaction chamber being configured as the combustion chamber, the reaction chamber being connected to the heat exchange plate.
[0012] According to the present invention, a semiconductor process waste gas treatment device is provided, wherein the cooling mechanism includes: an exhaust tower, the lower part of which is connected to the third pipeline, and an exhaust pipe provided at the upper part of which is used to discharge the gas after secondary cooling; and a cooling component, part of which is disposed inside the exhaust tower, and the cooling component is used to perform secondary cooling on the cooled gas.
[0013] According to the present invention, a semiconductor process waste gas treatment device is provided, wherein the cooling assembly includes: a water inlet pipe, one end of which extends into the exhaust tower; a main pipeline, which is arranged in the exhaust tower along the height direction of the exhaust tower, and the first end of the main pipeline is connected to the water inlet pipe; a plurality of branch pipelines, which are arranged perpendicularly to and connected to the main pipeline, and the end of each branch pipeline not connected to the main pipeline is a closed end; and a water outlet pipe, which is connected to the second end of the main pipeline, and one end of the water outlet pipe extends out of the exhaust tower.
[0014] The semiconductor process waste gas treatment device provided by this utility model further includes a second flow sensor, which is disposed in the water inlet pipe and is used to detect the flow rate of the cooling medium.
[0015] The semiconductor process waste gas treatment device provided by this utility model can absorb the heat of the hot gas generated by combustion by setting a heat exchange plate to preheat the compressed air, thereby increasing the temperature of the compressed air, which in turn improves the efficiency of waste gas combustion and the temperature in the combustion chamber, ensuring the efficiency and stability of waste gas oxidation-reduction. Attached Figure Description
[0016] To more clearly illustrate the technical solutions in this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.
[0017] Figure 1 This is a schematic diagram of the semiconductor process waste gas treatment device provided by this utility model.
[0018] Figure 2 yes Figure 1 The diagram shows the structure of the heat exchange plate.
[0019] Figure 3 yes Figure 1 The diagram shows the structure of the cooling assembly.
[0020] Figure label: 10. Combustion mechanism; 11. Flame; 12. Reaction chamber; 20. Heat exchange plate; 21. First inlet; 22. First outlet; 23. Second inlet; 24. Second outlet; 31. First pipeline; 32. Second pipeline; 33. Third pipeline; 40. First flow sensor; 50. Fan; 60. Exhaust tower; 70. Cooling assembly; 71. Water inlet pipe; 72. Main pipeline; 73. Branch pipeline; 74. Water outlet pipe; 80. Second flow sensor; 100. Natural gas pipeline; 101. Normal temperature compressed air pipeline; 211. First inlet flow channel; 221. First outlet flow channel. Detailed Implementation
[0021] The embodiments of this utility model will be described in further detail below with reference to the accompanying drawings and examples. The following examples are for illustrative purposes only and should not be construed as limiting the scope of this utility model.
[0022] In the description of the embodiments of this utility model, it should be noted that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this utility model. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.
[0023] In the description of the embodiments of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of this utility model based on the specific circumstances.
[0024] In this embodiment of the utility model, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.
[0025] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.
[0026] The following is combined Figures 1-3 This invention describes a device for treating semiconductor process waste gas.
[0027] like Figure 1 As shown in the embodiment of this utility model, the semiconductor process waste gas treatment device includes a combustion mechanism 10 and a heat exchange plate 20. The combustion mechanism 10 has a mixing chamber and a combustion chamber, which are connected. Natural gas and compressed air are mixed in the mixing chamber, and the mixed gas is burned in the combustion chamber to generate hot gas. The heat exchange plate 20 is connected to the combustion chamber, the mixing chamber, and the ambient temperature compressed air pipeline 101. The hot gas and the ambient temperature compressed air exchange heat in the heat exchange plate 20. The temperature of the hot gas decreases, and the temperature of the ambient temperature compressed air increases, becoming hot compressed air. The hot compressed air enters the mixing chamber, mixes with the natural gas, and then burns in the combustion chamber. In this embodiment, by introducing hot gas into the heat exchange plate 20, the ambient temperature compressed air can absorb the heat of the hot gas for preheating, increasing the temperature of the compressed air, thereby improving the combustion efficiency of the waste gas and the temperature in the combustion chamber, ensuring the efficiency and stability of the waste gas oxidation-reduction process.
[0028] The semiconductor process waste gas treatment device provided in this embodiment of the utility model can absorb the heat of the hot gas generated by combustion by setting a heat exchange plate to preheat the compressed air, thereby increasing the temperature of the compressed air, which in turn improves the efficiency of waste gas combustion and the temperature in the combustion chamber, ensuring the efficiency and stability of waste gas oxidation-reduction.
[0029] like Figure 1 As shown, in an embodiment of this utility model, the combustion mechanism 10 includes a torch 11 and a reaction chamber 12. The torch 11 is connected to the reaction chamber 12, and the torch 11 is also used to connect to the natural gas pipeline 100 and the heat exchange plate 20. The torch 11 is configured as a mixing chamber. The reaction chamber 12 is also connected to the heat exchange plate 20, and the reaction chamber 12 is configured as a combustion chamber.
[0030] Specifically, in the initial state, the flare 11 contains a certain amount of natural gas and room-temperature compressed air, which are mixed within the flare 11. A burner is installed on the top surface of the reaction chamber 12, connected to the flare 11. The mixed gas enters the burner and is ignited, burning within the reaction chamber 12. The hot gas generated by combustion enters the heat exchange plate 20, where it exchanges heat with the room-temperature compressed air, raising its temperature to become hot compressed air. This hot compressed air then enters the flare 11 and mixes with the natural gas to improve the combustion efficiency of the exhaust gas.
[0031] like Figure 1 As shown in the embodiment of this utility model, the semiconductor process waste gas treatment device also includes a cooling mechanism. The cooling mechanism is connected to the heat exchange plate 20. That is, after the hot gas exchanges heat with the room temperature compressed air, the gas temperature decreases. The cooled gas enters the cooling mechanism for secondary cooling before being discharged into the acid discharge pipe.
[0032] like Figure 2 As shown in the embodiment of this utility model, the heat exchange plate 20 is provided with a first inlet 21, a first flow channel, and a first outlet 22 connected in sequence, and a second inlet 23, a second flow channel, and a second outlet 24 connected in sequence. The first inlet 21 is connected to the ambient temperature compressed air pipeline 101, and the first outlet 22 is connected to the mixing chamber through the first pipeline 31. The second inlet 23 is connected to the combustion chamber through the second pipeline 32, and the second outlet 24 is connected to the cooling mechanism through the third pipeline 33.
[0033] Specifically, the hot gas generated by combustion in the combustion chamber enters the second flow channel through the second pipe 32 and the second inlet 23, while the ambient temperature compressed air enters the first flow channel through the first inlet 21. When the hot gas flows in the second flow channel, it exchanges heat with the ambient temperature compressed air in the first flow channel, causing the ambient temperature compressed air to rise in temperature and become hot compressed air. The hot compressed air enters the mixing chamber through the first outlet 22 and the first pipe 31. The cooled gas enters the cooling mechanism through the second outlet 24 and the third pipe 33 for secondary cooling.
[0034] Furthermore, to improve heat exchange capacity, in this embodiment of the invention, there are multiple heat exchange plates 20, which are stacked sequentially. Multiple first inlets 21 of the multiple heat exchange plates 20 are sequentially connected to form a first inlet channel 211, multiple first outlets 22 are sequentially connected to form a first outlet channel 221, multiple second inlets 23 are sequentially connected to form a second inlet channel, and multiple second outlets 24 are sequentially connected to form a second outlet channel. The two ends of each first channel are connected to the first inlet channel 211 and the first outlet channel 221, respectively, and the two ends of each second channel are connected to the second inlet channel and the second outlet channel, respectively.
[0035] Room temperature compressed air flows through the first inlet channel 211 into each of the first channels, and then enters the first outlet channel 221. Hot gas flows through the second inlet channel into each of the second channels, and then enters the second outlet channel. Heat exchange occurs between the room temperature compressed air and the hot gas during the flow. In this embodiment, by setting multiple heat exchange plates 20, the flow path between the hot gas and the room temperature compressed air within the heat exchange plates 20 is increased, prolonging the heat exchange time and thus improving the heat exchange capacity, effectively preheating the compressed air.
[0036] like Figure 1 As shown in the embodiment of this utility model, the semiconductor process waste gas treatment device further includes a first flow sensor 40. The first flow sensor 40 is disposed in the first pipeline 31. The first flow sensor 40 is used to detect the flow rate of the hot compressed air in the first pipeline 31 and display it in real time. The first flow sensor 40 can issue an alarm when the flow rate of the hot compressed air in the first pipeline 31 is abnormal, at which time the entire treatment device stops.
[0037] like Figure 1 As shown in the embodiment of this utility model, the semiconductor process waste gas treatment device further includes a fan 50, which is installed in the second pipeline 32 and is used to guide the hot gas in the reaction chamber 12 to the heat exchange plate 20.
[0038] like Figure 1 As shown in the embodiment of this utility model, the cooling mechanism includes an exhaust tower 60 and a cooling assembly 70. The lower part of the exhaust tower 60 is connected to the third pipe 33, and the upper part of the exhaust tower 60 is provided with an exhaust pipe to discharge the gas after the second cooling. Part of the cooling assembly 70 is disposed inside the exhaust tower 60. The gas, after exchanging heat with room temperature compressed air in the heat exchange plate 20, enters the bottom of the exhaust tower 60 through the third pipe 33. As the gas flows upward from the bottom of the exhaust tower 60, it exchanges heat with the cooling medium in the cooling assembly 70 to further reduce the temperature of the gas. The gas after the second cooling is discharged into the acid discharge pipe through the exhaust pipe of the exhaust tower 60.
[0039] like Figure 3 As shown in the embodiment of this utility model, the cooling assembly 70 includes: an inlet pipe 71, a main pipe 72, multiple branch pipes 73, and an outlet pipe 74. One end of the inlet pipe 71 extends into the exhaust tower 60 and connects to the first end of the main pipe 72, which is arranged along the height direction of the exhaust tower 60. The second end of the main pipe 72 is connected to the outlet pipe 74, and one end of the outlet pipe 74 extends outside the exhaust tower 60. The multiple branch pipes 73 are arranged in parallel and perpendicular to the main pipe 72.
[0040] Specifically, the cooling medium enters the main pipe 72 and multiple branch pipes 73 through the inlet pipe 71, and then flows out through the outlet pipe 74. During the flow of the cooling medium, the gas, after being cooled once, enters the exhaust tower 60 from the bottom and flows towards the top of the exhaust tower 60. During the gas flow, it exchanges heat with the cooling medium in the main pipe 72 and multiple branch pipes 73 to further cool the gas. The cooled gas is then discharged outside the exhaust tower 60. In this embodiment, the main pipe 72 is vertically arranged, and the multiple branch pipes 73 are horizontally arranged. By setting multiple branch pipes 73, the gas can exchange heat with multiple branch pipes 73 sequentially during its upward flow, increasing the number of heat exchange cycles and improving the cooling capacity of the cooling assembly 70, so that the gas temperature can be reduced to the set temperature.
[0041] Optionally, in an embodiment of this invention, the cooling medium can be process cooling water. Further, the outlet pipe 74 can be connected to the inlet pipe 71, thereby forming a circulation loop with the inlet pipe 71, the main pipe 72, and the outlet pipe 74. With one inlet and one outlet, theoretically no cooling medium is consumed. This treatment mode eliminates the need for a process water washing step, reducing water consumption and wastewater discharge; simultaneously, it reduces gas humidity, preventing acid buildup inside the acid discharge pipes and further lowering maintenance costs.
[0042] like Figure 3 As shown in the embodiment of this utility model, the semiconductor process waste gas treatment device further includes a second flow sensor 80. The second flow sensor 80 is installed in the water inlet pipe 71. The second flow sensor 80 is used to detect the flow rate of the cooling medium and display it in real time. When the flow rate of the cooling medium is abnormal, the entire treatment device stops and issues an alarm.
[0043] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this utility model, and not to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model.
Claims
1. A device for treating semiconductor process waste gas, characterized in that, include: A combustion mechanism having a mixing chamber and a combustion chamber, the mixing chamber being connected to the combustion chamber, wherein natural gas and compressed air are mixed in the mixing chamber, and the mixed gas is burned in the combustion chamber to produce hot gas; The heat exchange plate is connected to the combustion chamber, the mixing chamber, and the ambient temperature compressed air pipeline. The hot gas and the ambient temperature compressed air exchange heat on the heat exchange plate to form hot compressed air, which then enters the mixing chamber.
2. The semiconductor process waste gas treatment device according to claim 1, characterized in that, It also includes a cooling mechanism connected to the heat exchange plate, which is used to perform secondary cooling on the cooled gas.
3. The semiconductor process waste gas treatment apparatus according to claim 2, characterized in that, The heat exchange plate is provided with a first inlet, a first flow channel and a first outlet connected in sequence. The first inlet is connected to the ambient temperature compressed air pipeline and the first outlet is connected to the mixing chamber through the first pipeline. The heat exchange plate is also provided with a second inlet, a second flow channel and a second outlet connected in sequence. The second inlet is connected to the combustion chamber through a second pipe and the second outlet is connected to the cooling mechanism through a third pipe.
4. The semiconductor process waste gas treatment apparatus according to claim 3, characterized in that, The number of heat exchange plates is multiple, and the multiple heat exchange plates are stacked in sequence. Multiple first inlets are connected in sequence to form a first inlet channel, and multiple first outlets are connected in sequence to form a first outlet channel. The two ends of each first channel are connected to the first inlet channel and the first outlet channel, respectively.
5. The semiconductor process waste gas treatment apparatus according to claim 3, characterized in that, It also includes a first flow sensor, which is disposed in the first pipeline and is used to detect the flow rate of the hot compressed air.
6. The semiconductor process waste gas treatment apparatus according to claim 3, characterized in that, It also includes a fan, which is installed in the second pipeline and is used to guide the hot gas to the heat exchange plate.
7. The semiconductor process waste gas treatment apparatus according to claim 1, characterized in that, The combustion mechanism includes: A flare, connected to the heat exchange plate, the flare also being used to connect to a natural gas pipeline, the flare being configured as the mixing chamber; The reaction chamber is connected to the flare and is configured as the combustion chamber. The reaction chamber is connected to the heat exchange plate.
8. The semiconductor process waste gas treatment apparatus according to claim 3, characterized in that, The cooling mechanism includes: An exhaust tower, the lower part of which is connected to the third pipeline, and the upper part of which is equipped with an exhaust pipe to discharge the gas after secondary cooling; A cooling component, part of which is disposed inside the exhaust tower, is used to perform secondary cooling on the cooled gas.
9. The semiconductor process waste gas treatment apparatus according to claim 8, characterized in that, The cooling assembly includes: A water inlet pipe, one end of which extends into the exhaust tower; A main pipeline is installed inside the exhaust tower along the height direction of the exhaust tower, and the first end of the main pipeline is connected to the water inlet pipe; Multiple branch pipes are arranged perpendicularly to and connected to the main pipe, and the end of each branch pipe that is not connected to the main pipe is a closed end; The outlet pipe is connected to the second end of the main pipeline, and one end of the outlet pipe extends to the outside of the exhaust tower.
10. The semiconductor process waste gas treatment apparatus according to claim 9, characterized in that, It also includes a second flow sensor, which is disposed in the water inlet pipe and is used to detect the flow rate of the cooling medium.