sintering furnace

Abstract

The embodiment of the present application provides a sintering furnace, and relates to the technical field of solar cell preparation. The sintering furnace comprises a support assembly, a furnace tube, a first partition plate, a conveying assembly and a temperature adjusting assembly. The furnace tube surrounds a communicating heating cavity and a cooling cavity, and the first partition plate is arranged in the heating cavity and divides the heating cavity into a first chamber and a second chamber arranged along a second direction. The conveying assembly comprises a first conveying member, and the first conveying member comprises a first conveying belt. The first conveying belt can reciprocate between the first chamber and the second chamber. The first conveying belt located in the first chamber is used for driving a silicon wafer to move along a first direction to the cooling cavity. The temperature adjusting assembly comprises a heating member and a first heat preservation member. The heating member is arranged in the first chamber, and the first heat preservation member is arranged in the second chamber. The embodiment of the present application can reduce the influence of the first conveying belt on the temperature in the first chamber when the first conveying belt moves between the first chamber and the second chamber, and is beneficial to reducing the energy consumption of the sintering furnace.

Description

Technical Field

[0001] The embodiments of this application relate to the technical field of solar cell fabrication, and more particularly to a sintering furnace. Background Technology

[0002] In the fabrication process of solar cells, a paste can be printed onto a silicon wafer using screen printing. The silicon wafer is then transferred to a sintering furnace, where the paste is heated at high temperatures to remove organic solvents and binders, allowing the paste to solidify onto the silicon wafer. This process also reduces the contact resistance between the paste and the silicon wafer, thus forming electrodes.

[0003] Sintering furnaces typically have high energy consumption, which is not conducive to energy conservation. Utility Model Content

[0004] The embodiments of this application disclose a sintering furnace that can reduce energy consumption and save energy.

[0005] On one hand, embodiments of this application provide a sintering furnace. The sintering furnace includes a support assembly, a furnace tube, a first partition, a conveying assembly, and a temperature control assembly. The furnace tube is disposed on the support assembly. The furnace tube encloses a communicating heating chamber and a cooling chamber, the temperature of which is higher than that of the cooling chamber, and the heating chamber and the cooling chamber are arranged along a first direction. The first partition is disposed within the heating chamber and divides the heating chamber into a first chamber and a second chamber arranged along a second direction, the first chamber being farther away from the support assembly relative to the second chamber. The second direction is perpendicular to the first direction. The conveying assembly includes a first conveyor element, which includes a first conveyor belt. The first conveyor belt is located within the first chamber and the second chamber, and the first conveyor belt can reciprocate between the first chamber and the second chamber. The first conveyor belt located within the first chamber is used to drive a silicon wafer to move along the first direction toward the cooling chamber, so as to transfer the silicon wafer to the cooling chamber. The temperature control assembly includes a heating element and a first insulation element. The heating element is disposed within the first chamber, and the first insulation element is disposed within the second chamber.

[0006] In some possible implementations, the conveying assembly further includes a second conveyor located within the cooling chamber, and the second conveyor and the first conveyor are arranged adjacent to each other along a first direction. The second conveyor includes a second conveyor belt. The first conveyor belt, located within the first chamber, drives the silicon wafer along the first direction towards the cooling chamber to transfer the silicon wafer to the second conveyor belt. The second conveyor belt drives the silicon wafer along the first direction away from the heating chamber to transfer the silicon wafer outside the furnace tube.

[0007] In some possible implementations, the sintering furnace further includes a second partition disposed within the cooling chamber and dividing the cooling chamber into a third chamber and a fourth chamber. The third and fourth chambers are arranged along a second direction, with the third chamber located away from the support assembly relative to the fourth chamber. The first and third chambers are in communication. A second conveyor belt is located within the third and fourth chambers and is capable of reciprocating between the third and fourth chambers. The first conveyor belt located within the first chamber drives the silicon wafers along a first direction toward the cooling chamber to transfer the silicon wafers to the second conveyor belt located within the third chamber. The second conveyor belt located within the third chamber drives the silicon wafers along the first direction away from the heating chamber to transfer the silicon wafers outside the furnace tubes.

[0008] In some possible implementations, the temperature control assembly also includes a heat sink disposed within the third chamber.

[0009] In some possible implementations, the sintering furnace further includes a first baffle located between the heating chamber and the cooling chamber and connected to the furnace tube. Along the second direction, the distance between the first baffle and the first conveyor belt located in the first chamber is greater than the thickness of the silicon wafer, and along the second direction, the distance between the first baffle and the second conveyor belt located in the third chamber is greater than the thickness of the silicon wafer.

[0010] In some possible implementations, the heating chamber includes a first heating chamber and a second heating chamber connected in a first direction, with the second heating chamber located between the first heating chamber and the cooling chamber. The temperature of the second heating chamber is higher than the temperature of the first heating chamber. The first conveying element includes a first conveyor and a second conveyor, the first conveyor being disposed within the first heating chamber and the second conveyor being disposed within the second heating chamber. The first and second conveyors are arranged adjacent to each other along the first direction. The first conveyor includes a first conveyor belt, and the second conveyor includes a second first conveyor belt. The first conveyor belt is used to move the silicon wafer along the first direction towards the second heating chamber to transfer the silicon wafer to the second conveyor belt. The second conveyor belt is used to move the silicon wafer along the first direction towards the cooling chamber to transfer the silicon wafer to the second conveyor belt.

[0011] In some possible implementations, the sintering furnace further includes a second baffle located between the first and second heating chambers and connected to the furnace tube. Along a second direction, the distance between the second baffle and the first first conveyor belt located within the first chamber is greater than the thickness of the silicon wafer, and along the second direction, the distance between the second baffle and the second first conveyor belt located within the first chamber is greater than the thickness of the silicon wafer.

[0012] In some possible implementations, the first conveyor further includes a plurality of first conveyor wheels spaced apart along a first direction, and a first conveyor belt is connected to the plurality of first conveyor wheels. At least a portion of at least one of the first conveyor wheels is disposed within a second chamber.

[0013] In some possible implementations, the first insulation element and the inner wall of the second chamber are connected.

[0014] In some possible implementations, the first insulation component includes at least one of insulation cotton and insulation board.

[0015] In summary, the embodiments of this application have at least the following beneficial effects:

[0016] In the embodiments of this application, a first partition is provided to divide the heating chamber into a first chamber and a second chamber. The heating element is disposed in the first chamber, which can reduce the volume of the chamber that the heating element needs to heat, so that the temperature in the first chamber can rise to the set temperature range in a shorter time, thereby reducing the energy consumption of the sintering furnace and saving energy.

[0017] Placing the first insulation component inside the second chamber serves to maintain heat and reduce heat loss from the first conveyor belt within the second chamber. This reduces heat loss caused by the first conveyor belt moving between the first and second chambers, thus lowering the energy consumption of the sintering furnace and promoting energy conservation.

[0018] Understandably, the first conveyor belt located within the first chamber moves the silicon wafer along a first direction towards the cooling chamber, causing impurities generated during the sintering process (such as fallen silver paste) to fall onto the first conveyor belt within the first chamber. Since the first chamber is farther from the support components than the second chamber, as the first conveyor belt carrying impurities moves to the second chamber, the impurities can fall into the second chamber under gravity, reducing the amount of impurities remaining in the first chamber and enabling the second chamber to collect the impurities. Cleaning the second chamber allows for the removal of impurities, improving the ease of cleaning the furnace tubes.

[0019] Furthermore, the first conveyor belt reciprocates between the first and second chambers. When a part of the first conveyor belt is damaged, the damaged part can be moved to the second chamber for repair. The damaged part of the first conveyor belt can be repaired in the second chamber without disassembling the first conveyor belt, which improves the convenience of maintenance and reduces the impact of the maintenance process on the silicon wafers located in the first chamber. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This is a schematic diagram of the structure of a sintering furnace provided in some embodiments of this application;

[0022] Figure 2 This is a schematic diagram of the structure of a sintering furnace provided for other embodiments of this application.

[0023] Explanation of reference numerals in the attached figures:

[0024] 100 - Sintering furnace, 110 - Furnace tube, 111 - Heating chamber, 111a - First heating chamber, 111b - Second heating chamber, 1111 - First chamber, 1111a - First first chamber, 1111b - Second first chamber, 1112 - Second chamber, 1112a - First second chamber, 1112b - Second second chamber, 112 - Cooling chamber, 1121 - Third chamber, 1122 - Fourth chamber, 121 - First partition, 121a - First first partition, 121b - Second first partition, 122 - Second partition, 130 - Conveying assembly, 131 - First conveyor, 1311 - First conveyor belt, 1312 - First conveyor wheel, 131a - First 1311a - First first conveyor belt, 1312a - First first conveyor wheel, 131b - Second first conveyor, 1311b - Second first conveyor belt, 1312b - Second first conveyor wheel, 132 - Second conveyor, 1321 - Second conveyor belt, 1322 - Second conveyor wheel, 140 - Temperature control component, 141 - Heating component, 142 - First insulation component, 143 - Heat dissipation component, 151 - First baffle, 152 - Second baffle, 190 - Support component, 191 - Support platform, 192 - Support foot, 201 - Other external conveyor components, X - First direction, Y - Second direction, Z - Third direction, D1 - First distance, D2 - Second distance. Detailed Implementation

[0025] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0026] In this application, the terms "upper," "left," "right," "front," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing this application and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.

[0027] Furthermore, in addition to indicating location or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0028] Furthermore, the terms "installation," "setup," "equipped with," and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this application based on the specific circumstances.

[0029] Furthermore, the terms "first," "second," etc., are primarily used to distinguish different devices, elements, or components (which may be the same or different in specific type and construction), and are not intended to indicate or imply the relative importance or quantity of the indicated devices, elements, or components. Unless otherwise stated, "a plurality of" means two or more.

[0030] Figure 1 The diagram shows the structure of a sintering furnace provided in some embodiments of this application. Figure 1 As shown, an embodiment of this application provides a sintering furnace 100, which has low energy consumption and is conducive to energy conservation.

[0031] like Figure 1 As shown, the sintering furnace 100 includes a support assembly 190, a furnace tube 110, a first partition 121, and a conveying assembly 130.

[0032] For example, such as Figure 1 As shown, the support assembly 190 may include a support platform 191 and a support foot 192, which are connected. The furnace tube 110 is disposed on the support assembly 190. For example, the furnace tube 110 can be placed on the side of the support platform 191 away from the support foot 192, so that the support assembly 190 can serve to support the furnace tube 110.

[0033] The furnace tube 110 can be a cylindrical structure, such as a cylinder, or it can be other regular or irregular cylindrical structures. The embodiments of this application do not further limit the shape of the furnace tube 110.

[0034] Continue to refer to Figure 1 In some examples, the furnace tube 110 can enclose a communicating heating chamber 111 and a cooling chamber 112. The temperature of the heating chamber 111 is greater than the temperature of the cooling chamber 112, and the heating chamber 111 and the cooling chamber 112 are arranged along a first direction X.

[0035] Understandably, the heating chamber 111 can cure and sinter the paste on the silicon wafer, while the cooling chamber 112 can cool the silicon wafer. For example, the cooling chamber 112 can cool the silicon wafer to room temperature.

[0036] A first partition 121 is disposed within the heating chamber 111 and divides the heating chamber 111 into a first chamber 1111 and a second chamber 1112 arranged along the second direction Y. The first chamber 1111 is located away from the support assembly 190 relative to the second chamber 1112. The second direction Y is perpendicular to the first direction X.

[0037] The first partition 121 can be disposed inside the heating chamber 111 and connected to the inner wall of the furnace tube 110, so that the first partition 121 can divide the heating chamber 111 into a first chamber 1111 and a second chamber 1112 arranged along the second direction Y. The first partition 121 and the furnace tube 110 can be integrally formed to improve the reliability of the connection between them.

[0038] For example, the second direction Y and the first direction X can be perpendicular or approximately perpendicular. That is, the angle between the second direction Y and the first direction X can be 90°, or it can be 88° or 89°, etc.

[0039] Continue to refer to Figure 1 In some examples, the conveying assembly 130 includes a first conveyor 131, which includes a first conveyor belt 1311 located within a first chamber 1111 and a second chamber 1112, and the first conveyor belt 1311 is reciprocating between the first chamber 1111 and the second chamber 1112.

[0040] Understandably, the first conveyor belt 1311 is located within the first chamber 1111 and the second chamber 1112, but not within the cooling chamber 112.

[0041] like Figure 1As shown, the first conveyor belt 1311 can extend along the second direction Y and the first direction X to surround the first partition 121, so that the first conveyor belt 1311 can be located within the first chamber 1111 and the second chamber 1112, and can reciprocate between the first chamber 1111 and the second chamber 1112. The first partition 121 can avoid the first conveyor belt 1311. For example, the first partition 121 can extend along the third direction Z and connect to the furnace tube 110 to reduce the mutual influence between the first partition 121 and the first conveyor 131.

[0042] The third direction Z is perpendicular or approximately perpendicular to the plane containing the second direction Y and the first direction X. In other words, the angle between the third direction Z and the plane containing the second direction Y and the first direction X can be 90°, 88°, or 89°, etc.

[0043] The first conveyor belt 1311 located in the first chamber 1111 is used to drive the silicon wafer to move along the first direction X toward the cooling chamber 112, so as to transfer the silicon wafer to the cooling chamber 112.

[0044] The first conveyor belt 1311 located in the first chamber 1111 can move along the first direction X. The silicon wafer can be placed on the first conveyor belt 1311 located in the first chamber 1111, so that the first conveyor belt 1311 located in the first chamber 1111 can drive the silicon wafer to move along the first direction X towards the cooling chamber 112, thereby transferring the silicon wafer to the cooling chamber 112.

[0045] Understandably, the first conveyor belt 1311 located within the first chamber 1111 is used to move the silicon wafer along the first direction X towards the cooling chamber 112, so that impurities generated during the sintering process (such as fallen silver paste) will fall onto the first conveyor belt 1311 within the first chamber 1111. The first chamber 1111 is farther from the support assembly 190 relative to the second chamber 1112. When the first conveyor belt 1311 carrying impurities moves to the second chamber 1112, the impurities can fall into the second chamber 1112 under gravity, reducing the amount of impurities remaining in the first chamber 1111, allowing the second chamber 1112 to collect the impurities. Cleaning the second chamber 1112 allows for the removal of impurities, improving the ease of cleaning the furnace tube 110.

[0046] Furthermore, the first conveyor belt 1311 reciprocates between the first chamber 1111 and the second chamber 1112. When a part of the first conveyor belt 1311 is damaged, the damaged part can be moved to the second chamber 1112 for repair within the second chamber 1112. This eliminates the need to disassemble the first conveyor belt 1311, improving the convenience of maintenance and reducing the impact of the maintenance process on the silicon wafers located in the first chamber 1111.

[0047] Continue to refer to Figure 1 In some examples, the sintering furnace 100 also includes a temperature control assembly 140, which includes a heating element 141 disposed within a first chamber 1111.

[0048] For example, the heating element 141 may include an infrared lamp, or it may include an electric heating wire, etc. The embodiments of this application do not further limit the specific form of the heating element 141. There may be multiple heating elements 141, which are spaced apart within the first chamber 1111 and connected to the furnace tube 110 respectively.

[0049] Understandably, the first partition 121 divides the heating chamber 111 into a first chamber 1111 and a second chamber 1112. The heating element 141 is disposed in the first chamber 1111, which can reduce the volume of the chamber that the heating element 141 needs to heat, so that the temperature in the first chamber 1111 can rise to the set temperature range in a shorter time, thereby reducing the energy consumption of the sintering furnace 100 and saving energy.

[0050] For example, in the fabrication process of traditional solar cells, a passivated emitter and rear cell (PERC) process is typically used, and the paste for screen-printing the electrodes is usually aluminum paste. Aluminum paste has a high viscosity and often contains high-boiling-point organic compounds, making it relatively easy for aluminum paste to remain on the first conveyor belt 1311. Therefore, a cleaning assembly is required. The cleaning assembly can be located within the receiving space enclosed by the support platform 191. The first conveyor belt 1311 can reciprocate between the heating chamber 111 and the receiving space enclosed by the support platform 191, allowing the cleaning assembly to clean the first conveyor belt 1311 and reduce aluminum paste residue on it.

[0051] In the current mainstream solar cell manufacturing process, tunnel oxide passivated contact (TOPCon) technology is typically used, and the paste for screen-printed electrodes is usually silver paste. Silver paste has a lower viscosity, and the organic carrier in silver paste is more likely to evaporate quickly in the low-temperature region, making it less likely to remain on the first conveyor belt 1311 compared to aluminum paste.

[0052] Therefore, in the embodiments of this application, the sintering furnace 100 may not include a cleaning component, and there is no need to clean the first conveyor belt 1311, so as to simplify the structure of the sintering furnace 100.

[0053] Furthermore, when the first conveyor belt 1311 is cleaned by the cleaning component, a significant amount of heat is lost, leading to a decrease in the temperature inside the first chamber 1111. The embodiments of this application do not include a cleaning component, which reduces the heat dissipation of the first conveyor belt 1311, lowers heat loss, and helps reduce the energy consumption of the sintering furnace 100.

[0054] Continue to refer to Figure 1 In some examples, the temperature control assembly 140 also includes a first insulation element 142 disposed within the second chamber 1112.

[0055] Understandably, the first insulation element 142 serves to maintain temperature. In some examples, the first insulation element 142 is connected to the inner wall of the second chamber 1112. This arrangement reduces the impact of the first insulation element 142 on the movement of the first conveyor belt 1311 within the second chamber 1112.

[0056] In some examples, the first insulation element 142 includes at least one of insulation cotton and insulation board. This arrangement enables the first insulation element 142 to perform its insulation function without requiring a complex structure, which helps to reduce the cost of the sintering furnace 100.

[0057] Understandably, placing the first insulation component 142 inside the second chamber 1112 can serve to insulate the heat and reduce the heat dissipation of the first conveyor belt 1311 within the second chamber 1112, thus reducing heat loss caused by the movement of the first conveyor belt 1311 between the first chamber 1111 and the second chamber 1112. This reduces the energy consumption of the sintering furnace 100 and helps conserve energy.

[0058] Continue to refer to Figure 1 In some examples, the first conveyor 131 further includes a plurality of first conveyor wheels 1312, which are spaced apart along a first direction X, and the first conveyor belt 1311 is connected to the plurality of first conveyor wheels 1312. At least a portion of at least one first conveyor wheel 1312 is disposed within the second chamber 1112.

[0059] For example, there may be two first transmission wheels 1312, one of which is the driving wheel and the other is the driven wheel. The first transmission member 131 may also include a first drive unit (not shown in the figure), which is connected to the driving wheel and is used to drive the driving wheel to rotate. For example, the first drive unit may be a motor.

[0060] The first conveyor belt 1311 is connected to multiple first conveyor wheels 1312, so that when the driving wheel rotates, it can drive the first conveyor belt 1311 to move, and drive the driven wheel to rotate through the first conveyor belt 1311, so that the first conveyor belt 1311 located in the first chamber 1111 can drive the silicon wafer to move along the first direction X towards the cooling chamber 112.

[0061] At least one part of the first conveyor wheel 1312 is disposed in the second chamber 1112. That is, among the plurality of first conveyor wheels 1312, a part of each first conveyor wheel 1312 may be disposed in the second chamber 1112, and the other part of each first conveyor wheel 1312 may be disposed in the first chamber 1111.

[0062] Alternatively, among the multiple first transmission wheels 1312, a portion of one, two, or more first transmission wheels 1312 may be disposed in the second chamber 1112, another portion of one, two, or more first transmission wheels 1312 may be disposed in the first chamber 1111, and the remaining first transmission wheels 1312 may be disposed in the second chamber 1112.

[0063] Understandably, at least a portion of the first conveyor wheel 1312 is located within the second chamber 1112, allowing the first conveyor belt 1311 to be positioned within both the first and second chambers 1111 and to reciprocate between them. Furthermore, this reduces the impact of the high temperature within the first chamber 1111 on the first conveyor wheel 1312, improving the reliability of the first conveyor component 131.

[0064] For example, a portion of the drive wheel can be located within the second chamber 1112, allowing the first drive unit to be positioned within the second chamber 1112 and drive the drive wheel to rotate. This reduces the impact of the high temperature within the first chamber 1111 on the first drive unit and improves the reliability of the first transmission member 131. Furthermore, it also reduces the impact of the first drive unit on silicon wafer transport.

[0065] As can be seen from the above, if Figure 1 As shown, the first conveyor 131 is located within the heating chamber 111. In some examples, such as... Figure 1 As shown, the conveying assembly 130 also includes a second conveying member 132, which is located inside the cooling chamber 112, and the second conveying member 132 and the first conveying member 131 are arranged adjacent to each other along the first direction X.

[0066] The second conveyor 132 includes a second conveyor belt 1321. The first conveyor belt 1311, located in the first chamber 1111, is used to move the silicon wafer along the first direction X towards the cooling chamber 112 to transfer the silicon wafer to the second conveyor belt 1321. The second conveyor belt 1321 is used to move the silicon wafer along the first direction X away from the heating chamber 111 to transfer the silicon wafer outside the furnace tube 110.

[0067] For example, along the second direction Y, the first conveyor belt 1311 located in the heating cavity 111 and the second conveyor belt 1321 located in the cooling cavity 112 can be flush or nearly flush, and along the first direction X, the gap between the first conveyor belt 1311 located in the heating cavity 111 and the second conveyor belt 1321 located in the cooling cavity 112 is small, so that the silicon wafer can be transported between them.

[0068] The conveying assembly 130 includes a first conveyor 131 located in the heating chamber 111 and a second conveyor 132 located in the cooling chamber 112. This allows the conveyor in the heating chamber 111 and the conveyor in the cooling chamber 112 to operate independently. This eliminates the need for a reciprocating conveyor belt between the heating chamber 111 and the cooling chamber 112, preventing the conveyor belt from transferring heat from the heating chamber 111 to the cooling chamber 112, thus reducing heat loss from the heating chamber 111 and lowering the energy consumption of the sintering furnace 100. Furthermore, it reduces the risk of conveyor belt damage caused by alternating hot and cold temperatures, extending the service life of the conveying assembly 130.

[0069] Furthermore, the first transmission component 131 and the second transmission component 132 are set to be independent of each other, thereby enabling separate maintenance of the first transmission component 131 and the second transmission component 132, which improves the convenience of maintenance.

[0070] Continue to refer to Figure 1 In some examples, the furnace tube 110 further includes a second partition 122 disposed within the cooling chamber 112 and dividing the cooling chamber 112 into a third chamber 1121 and a fourth chamber 1122, the third chamber 1121 and the fourth chamber 1122 being arranged along a second direction Y, with the third chamber 1121 being located away from the support assembly 190 relative to the fourth chamber 1122. The first chamber 1111 and the third chamber 1121 are in communication.

[0071] The second conveyor belt 1321 is located in the third chamber 1121 and the fourth chamber 1122, and the second conveyor belt 1321 can reciprocate between the third chamber 1121 and the fourth chamber 1122.

[0072] like Figure 1As shown, the second conveyor belt 1321 can extend along the second direction Y and the first direction X to surround the second partition 122, so that the second conveyor belt 1321 can be located within the third chamber 1121 and the fourth chamber 1122, and can reciprocate between the third chamber 1121 and the fourth chamber 1122. The second partition 122 can avoid the second conveyor belt 1321. For example, the second partition 122 can extend along the third direction Z and be connected to the furnace tube 110 to reduce the mutual influence between the second partition 122 and the second conveyor 132.

[0073] Understandably, the first chamber 1111 and the third chamber 1121 are connected, enabling the silicon wafer to be transported between the first chamber 1111 and the third chamber 1121. The second chamber 1112 and the fourth chamber 1122 may or may not be connected, and the embodiments of this application do not further limit this.

[0074] In some examples, a first conveyor belt 1311 located in a first chamber 1111 is used to move the silicon wafer along a first direction X toward the cooling chamber 112, so as to transfer the silicon wafer to a second conveyor belt 1321 located in a third chamber 1121. The second conveyor belt 1321 located in the third chamber 1121 is used to move the silicon wafer along the first direction X away from the heating chamber 111, so as to transfer the silicon wafer outside the furnace tube 110.

[0075] Understandably, the second conveyor belt 1321 located in the third chamber 1121 is used to move the silicon wafer away from the heating chamber 111 along the first direction X, so that impurities generated during the sintering process (such as fallen silver paste) will fall onto the second conveyor belt 1321 located in the third chamber 1121. The third chamber 1121 is far from the support assembly 190 relative to the fourth chamber 1122. When the second conveyor belt 1321 carrying impurities moves to the fourth chamber 1122, the impurities can fall into the fourth chamber 1122 under gravity, reducing the amount of impurities remaining in the third chamber 1121, allowing the fourth chamber 1122 to collect the impurities. Cleaning the fourth chamber 1122 can then remove the impurities, improving the ease of cleaning the furnace tube 110.

[0076] Furthermore, the second conveyor belt 1321 reciprocates between the third chamber 1121 and the fourth chamber 1122. When a part of the second conveyor belt 1321 is damaged, the damaged part can be moved to the fourth chamber 1122 for repair. The damaged part of the second conveyor belt 1321 can be repaired in the fourth chamber 1122 without disassembling the second conveyor belt 1321, which improves the convenience of maintenance and reduces the impact of the maintenance process on the silicon wafers located in the third chamber 1121.

[0077] For example, such as Figure 1As shown, the second conveyor 132 also includes a plurality of second conveyor wheels 1322, which are spaced apart along a first direction X. The second conveyor belt 1321 is connected to the plurality of second conveyor wheels 1322. At least one portion of the second conveyor wheel 1322 is disposed within the fourth chamber 1122.

[0078] The number of second transmission wheels 1322 can be two, one of which is the driving wheel and the other is the driven wheel. The second transmission member 132 may also include a second drive unit (not shown in the figure), which is connected to the driving wheel and is used to drive the driving wheel to rotate. For example, the second drive unit can be a motor.

[0079] The second conveyor belt 1321 is connected to multiple second conveyor wheels 1322, so that when the driving wheel rotates, it can drive the second conveyor belt 1321 to move, and drive the driven wheel to rotate through the second conveyor belt 1321, so that the second conveyor belt 1321 located in the third chamber 1121 can drive the silicon wafer to move away from the heating chamber 111 along the first direction X.

[0080] At least one part of the second conveyor wheel 1322 is disposed in the fourth chamber 1122, that is, among the plurality of second conveyor wheels 1322, a part of each second conveyor wheel 1322 may be disposed in the fourth chamber 1122, and another part of each second conveyor wheel 1322 may be disposed in the third chamber 1121.

[0081] Alternatively, among the multiple second transmission wheels 1322, a portion of one, two, or more second transmission wheels 1322 may be disposed in the fourth chamber 1122, another portion of one, two, or more second transmission wheels 1322 may be disposed in the third chamber 1121, and the remaining second transmission wheels 1322 may be disposed in the fourth chamber 1122.

[0082] Understandably, at least a portion of the second conveyor wheel 1322 is located within the fourth chamber 1122, such that the second conveyor belt 1321 is located within the third chamber 1121 and the fourth chamber 1122, and is capable of reciprocating between the third chamber 1121 and the fourth chamber 1122.

[0083] For example, a portion of the drive wheel may be located within the fourth chamber 1122, allowing the second drive unit to be positioned within the fourth chamber 1122 and drive the drive wheel to rotate, thereby reducing the impact of the second drive unit on silicon wafer transport.

[0084] Continue to refer to Figure 1 In some examples, the temperature control assembly 140 also includes a heat sink 143 disposed within the third chamber 1121.

[0085] The heat sink 143 serves to dissipate heat. The heat sink 143 may include a fan, or it may include heat dissipation pipes for containing cooling water. The embodiments of this application do not further limit the specific form of the heat sink 143. There may be multiple heat sinks 143, spaced apart within the third chamber 1121, and each connected to the furnace tube 110.

[0086] The second partition 122 divides the cooling chamber 112 into a third chamber 1121 and a fourth chamber 1122. The heat sink 143 is located in the third chamber 1121, which reduces the volume of the chamber that the heat sink 143 needs to dissipate heat. This allows the temperature in the third chamber 1121 to drop to the set temperature range in a shorter time, thereby reducing the energy consumption of the sintering furnace 100 and saving energy.

[0087] For example, the temperature control assembly 140 may also include a second insulation element (not shown in the figure), which may be disposed in the fourth chamber 1122 and can play a role in heat preservation, reducing the cold loss of the second conveyor belt 1321 after it moves into the fourth chamber 1122.

[0088] In this way, the impact of the second conveyor belt 1321 on the temperature inside the third chamber 1121 when it reciprocates between the third chamber 1121 and the fourth chamber 1122 can be reduced, thereby reducing the energy consumption of the sintering furnace 100 and saving energy.

[0089] The second insulation element can be disposed within the fourth chamber 1122 and connected to the inner wall of the fourth chamber 1122. The second insulation element may include insulation cotton or insulation board. The second insulation element and the first insulation element 142 may be the same or different. The embodiments of this application do not further limit this.

[0090] Alternatively, the temperature control assembly 140 may not include the second insulation component to simplify the structure of the sintering furnace 100 and reduce the cost of the sintering furnace 100.

[0091] Continue to refer to Figure 2 In some examples, the sintering furnace 100 also includes a first baffle 151, which is located between the heating chamber 111 and the cooling chamber 112 and connected to the furnace tube 110. For example, the first baffle 151 and the furnace tube 110 can be an integrally formed structure to improve the reliability of the connection between them.

[0092] Along the second direction Y, the distance between the first baffle 151 and the first conveyor belt 1311 located in the first chamber 1111 is greater than the thickness of the silicon wafer, and along the second direction Y, the distance between the first baffle 151 and the second conveyor belt 1321 located in the third chamber 1121 is greater than the thickness of the silicon wafer.

[0093] For example, in the second direction Y, the distance between the first baffle 151 and the first conveyor belt 1311 located in the first chamber 1111 is equal to or approximately equal to the distance between the first baffle 151 and the second conveyor belt 1321 located in the third chamber 1121. For instance, in the second direction Y, the distance between the first baffle 151 and the first conveyor belt 1311 located in the first chamber 1111, and the distance between the first baffle 151 and the second conveyor belt 1321 located in the third chamber 1121, are both a first distance D1.

[0094] The first distance D1 is greater than the thickness of the silicon wafer, so that the silicon wafer can be transferred between the heating cavity 111 and the cooling cavity 112, avoiding the first baffle 151 from blocking the transfer of the silicon wafer.

[0095] Figure 2 This is a schematic diagram of the structure of a sintering furnace provided for other embodiments of this application. In some examples, such as... Figure 2 As shown, the heating chamber 111 includes a first heating chamber 111a and a second heating chamber 111b that are connected together. Along the first direction X, the second heating chamber 111b is located between the first heating chamber 111a and the cooling chamber 112. The temperature of the second heating chamber 111b is higher than the temperature of the first heating chamber 111a.

[0096] For example, the first heating chamber 111a can be a drying chamber, and the temperature inside the first heating chamber 111a can be around 500°C (degrees Celsius). Alternatively, the temperature inside the first heating chamber 111a can be other values. The embodiments of this application do not further limit this.

[0097] The second heating chamber 111b can be a sintering chamber, and the temperature inside the second heating chamber 111b can be in the range of 800℃ to 900℃. Alternatively, the temperature inside the second heating chamber 111b can be other values, and the embodiments of this application do not further limit this.

[0098] The first heating chamber 111a and the second heating chamber 111b are connected, and the second heating chamber 111b is connected to the cooling chamber 112, so that the silicon wafer can pass through the first heating chamber 111a, the second heating chamber 111b and the cooling chamber 112 in sequence to achieve the drying and sintering of the paste, so that the paste can be solidified on the silicon wafer to form an electrode.

[0099] Continue to refer to Figure 2 For example, the first partition 121 may include a first first partition 121a and a second first partition 121b, the first first partition 121a being located within the first heating chamber 111a and dividing the first heating chamber 111a into a first first chamber 1111a and a first second chamber 1112a arranged along the second direction Y.

[0100] The second first partition 121b is located inside the second heating chamber 111b and divides the second heating chamber 111b into a second first chamber 1111b and a second second chamber 1112b arranged along the second direction Y.

[0101] Understandably, the first chamber 1111a and the second chamber 1111b are connected to form the first chamber 1111. The first chamber 1112a and the second chamber 1112b are connected to form the second chamber 1112.

[0102] For example, heating elements 141 may be provided in the first first chamber 1111a and the second first chamber 1111b respectively, and first heat-insulating elements 142 may be provided in the first second chamber 1112a and the second second chamber 1112b respectively.

[0103] Continue to refer to Figure 2 In some examples, the first conveyor 131 includes a first first conveyor 131a and a second first conveyor 131b, with the first first conveyor 131a disposed within a first heating chamber 111a and the second first conveyor 131b disposed within a second heating chamber 111b. Along the first direction X, the first first conveyor 131a and the second first conveyor 131b are arranged adjacent to each other.

[0104] For example, the first first conveyor 131a includes a first first conveyor belt 1311a and a plurality of first first conveyor wheels 1312a, the first first conveyor belt 1311a and the plurality of first first conveyor wheels 1312a being connected. The second first conveyor 131b includes a second first conveyor belt 1311b and a plurality of second first conveyor wheels 1312b, the second first conveyor belt 1311b and the plurality of second first conveyor wheels 1312b being connected.

[0105] Along the second direction Y, the first first conveyor belt 1311a located in the first first chamber 1111a and the second first conveyor belt 1311b located in the second first chamber 1111b can be flush or nearly flush, and along the first direction X, the gap between the first first conveyor belt 1311a located in the first first chamber 1111a and the second first conveyor belt 1311b located in the second first chamber 1111b is small, so that the silicon wafer can be transported between them.

[0106] The first conveyor belt 1311a is used to move the silicon wafer along the first direction X towards the second heating chamber 111b, so as to transfer the silicon wafer to the second first conveyor belt 1311b. The second first conveyor belt 1311b is used to move the silicon wafer along the first direction X towards the cooling chamber 112, so as to transfer the silicon wafer to the second conveyor belt 1321.

[0107] Understandably, such as Figure 2 As shown, other external conveyor components 201 can transfer silicon wafers to a first conveyor belt 1311a. The first conveyor belt 1311a can move the silicon wafers along a first direction X towards the second heating chamber 111b, thereby transferring the silicon wafers to a second conveyor belt 1311b. The second conveyor belt 1311b can move the silicon wafers along the first direction X towards the cooling chamber 112, thereby transferring the silicon wafers to a second conveyor belt 1321. The second conveyor belt 1321 can move the silicon wafers along the first direction X away from the heating chamber 111, thereby transferring the silicon wafers to other conveyor components 201 outside the furnace tube 110.

[0108] By adopting the above configuration, the conveying components in the first heating chamber 111a, the second heating chamber 111b, and the cooling chamber 112 can operate independently, avoiding the conveyor belt of the conveying components from circulating between the first heating chamber 111a, the second heating chamber 111b, and the cooling chamber 112. This reduces the impact of the conveying assembly 130 on the temperature of different chambers (first heating chamber 111a, second heating chamber 111b, and cooling chamber 112) during the movement of the silicon wafer, thereby reducing the loss of heat and cold and helping to reduce the energy consumption of the sintering furnace 100.

[0109] For example, if the conveyor belt of the conveyor unit circulates between the first heating chamber 111a, the second heating chamber 111b, and the cooling chamber 112, heat and cold energy are lost, resulting in a waste of approximately 62 kWh of electricity per hour. By using an independent conveyor system within the first heating chamber 111a, the second heating chamber 111b, and the cooling chamber 112, approximately 30 kWh of electricity can be saved per hour, reducing the power consumption of the sintering furnace 100 by approximately 48%.

[0110] Furthermore, by adopting the above-mentioned configuration, the first first transmission component 131a, the second first transmission component 131b, and the second transmission component 132 can be maintained independently, thereby improving the ease of maintenance of the transmission component 130.

[0111] Continue to refer to ​ In some examples, the sintering furnace 100 further includes a second baffle 152, which is located between the first heating chamber 111a and the second heating chamber 111b and connected to the furnace tube 110. For example, the second baffle 152 and the furnace tube 110 can be an integrally formed structure to improve the reliability of the connection between them.

[0112] Along the second direction Y, the distance between the second baffle 152 and the first first conveyor belt 1311a located in the first chamber 1111 (e.g., the first first chamber 1111a) is greater than the thickness of the silicon wafer, and along the second direction Y, the distance between the second baffle 152 and the second first conveyor belt 1311b located in the first chamber (e.g., the second first chamber 1111b) is greater than the thickness of the silicon wafer.

[0113] For example, in the second direction Y, the distance between the second baffle 152 and the first first conveyor belt 1311a located in the first chamber 1111 (e.g., the first first chamber 1111a) is equal to or approximately equal to the distance between the second baffle 152 and the second first conveyor belt 1311b located in the first chamber (e.g., the second first chamber 1111b). For instance, in the second direction Y, the distance between the second baffle 152 and the first first conveyor belt 1311a located in the first chamber 1111 (e.g., the first first chamber 1111a) is also equal to the distance between the second baffle 152 and the second first conveyor belt 1311b located in the first chamber (e.g., the second first chamber 1111b), both being a second distance D2.

[0114] The second distance D2 is greater than the thickness of the silicon wafer, so that the silicon wafer can be transported between the first first chamber 1111a and the second first chamber 1111b, avoiding the second baffle 152 from blocking the transport of the silicon wafer.

[0115] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A sintering furnace, characterized in that, include: Support components; Furnace tubes are mounted on the support assembly; The furnace tube encloses a connected heating chamber and a cooling chamber, the temperature of the heating chamber is greater than the temperature of the cooling chamber, and the heating chamber and the cooling chamber are arranged along a first direction; A first partition is disposed within the heating chamber and divides the heating chamber into a first chamber and a second chamber arranged along a second direction, wherein the first chamber is located away from the support assembly relative to the second chamber; the second direction is perpendicular to the first direction. A conveying assembly includes a first conveyor, the first conveyor including a first conveyor belt; the first conveyor belt is located in a first chamber and a second chamber, and the first conveyor belt can reciprocate between the first chamber and the second chamber; the first conveyor belt located in the first chamber is used to drive a silicon wafer to move closer to the cooling chamber along the first direction, so as to transfer the silicon wafer to the cooling chamber; as well as, The temperature control assembly includes a heating element and a first heat insulation element; the heating element is disposed in the first chamber, and the first heat insulation element is disposed in the second chamber.

2. The sintering furnace according to claim 1, characterized in that, The conveying assembly further includes a second conveying element, which is located inside the cooling cavity, and the second conveying element and the first conveying element are arranged adjacent to each other along the first direction; The second conveyor includes a second conveyor belt. The first conveyor belt, located within the first chamber, is used to move the silicon wafer along the first direction toward the cooling chamber to transfer the silicon wafer to the second conveyor belt. The second conveyor belt is used to move the silicon wafer along the first direction away from the heating chamber to transfer the silicon wafer outside the furnace tube.

3. The sintering furnace according to claim 2, characterized in that, It also includes a second partition, which is disposed within the cooling chamber and divides the cooling chamber into a third chamber and a fourth chamber, the third chamber and the fourth chamber being arranged along the second direction, and the third chamber being located away from the support assembly relative to the fourth chamber; the first chamber and the third chamber are in communication; The second conveyor belt is located in the third chamber and the fourth chamber, and the second conveyor belt can reciprocate between the third chamber and the fourth chamber; The first conveyor belt located in the first chamber is used to drive the silicon wafer to move closer to the cooling chamber along the first direction, so as to transfer the silicon wafer to the second conveyor belt located in the third chamber; the second conveyor belt located in the third chamber is used to drive the silicon wafer to move away from the heating chamber along the first direction, so as to transfer the silicon wafer to the outside of the furnace tube.

4. The sintering furnace according to claim 3, characterized in that, The temperature control assembly also includes a heat sink, which is disposed in the third chamber.

5. The sintering furnace according to claim 3, characterized in that, It also includes a first baffle, which is located between the heating chamber and the cooling chamber and is connected to the furnace tube; Along the second direction, the distance between the first baffle and the first conveyor belt located in the first chamber is greater than the thickness of the silicon wafer, and along the second direction, the distance between the first baffle and the second conveyor belt located in the third chamber is greater than the thickness of the silicon wafer.

6. The sintering furnace according to claim 2, characterized in that, The heating chamber includes a first heating chamber and a second heating chamber that are connected to each other. Along the first direction, the second heating chamber is located between the first heating chamber and the cooling chamber. The temperature of the second heating chamber is greater than the temperature of the first heating chamber. The first conveying component includes a first first conveying component and a second first conveying component, wherein the first first conveying component is disposed within the first heating cavity and the second first conveying component is disposed within the second heating cavity; along the first direction, the first first conveying component and the second first conveying component are disposed adjacent to each other; The first conveyor includes a first conveyor belt, and the second conveyor includes a second first conveyor belt; the first first conveyor belt is used to drive the silicon wafer to move along the first direction toward the second heating cavity, so as to transfer the silicon wafer to the second first conveyor belt; the second first conveyor belt is used to drive the silicon wafer to move along the first direction toward the cooling cavity, so as to transfer the silicon wafer to the second conveyor belt.

7. The sintering furnace according to claim 6, characterized in that, It also includes a second baffle, which is located between the first heating chamber and the second heating chamber and is connected to the furnace tube; Along the second direction, the distance between the second baffle and the first first conveyor belt located in the first chamber is greater than the thickness of the silicon wafer, and along the second direction, the distance between the second baffle and the second first conveyor belt located in the first chamber is greater than the thickness of the silicon wafer.

8. The sintering furnace according to any one of claims 1 to 7, characterized in that, The first conveyor also includes a plurality of first conveyor wheels, which are spaced apart along the first direction, and the first conveyor belt is connected to the plurality of first conveyor wheels; At least a portion of the first conveyor wheel is disposed within the second chamber.

9. The sintering furnace according to any one of claims 1 to 7, characterized in that, The first insulation component is connected to the inner wall of the second chamber.

10. The sintering furnace according to any one of claims 1 to 7, characterized in that, The first insulation component includes at least one of insulation cotton and insulation board.

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