A thermal field structure of a semiconductor heat treatment vacuum atmosphere furnace

Abstract

The utility model relates to semiconductor heat treatment equipment technical field, and disclose a kind of semiconductor heat treatment vacuum atmosphere furnace thermal field structure, including the shell for semiconductor heat treatment, shell side is equipped with door body, shell and door body inboard are filled with heat preservation layer;Shell inner wall bottom inserts support column, support column top is fixed with loading plate, loading plate top is used to place workpiece;Loading plate around is provided with several graphite heating rods, and graphite heating rod is used to heat shell inboard;Graphite heating rod both ends are equipped with first connecting plate and second connecting plate, and second connecting plate one side is fixed with several connecting columns, and first connecting plate one side is fixed with graphite electrode, fill the long fiber solidified felt of three layers structure as heat preservation layer in shell and door body inboard, and density decreases, effectively prevent heat loss to outside in furnace, in high-temperature stable operation window can be promoted to 2200 DEG C, while guaranteeing performance, initial cost can also be reduced.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor heat treatment equipment technology, specifically to a thermal field structure for a semiconductor heat treatment vacuum atmosphere furnace. Background Technology

[0002] In the semiconductor manufacturing process, heat treatment is a crucial step. As a key piece of equipment for semiconductor heat treatment, the performance of the thermal field structure of the vacuum atmosphere furnace directly affects the quality and efficiency of heat treatment. Existing vacuum atmosphere furnaces for semiconductor heat treatment have many shortcomings in terms of heat preservation. The heat preservation layer of some vacuum atmosphere furnaces uses a single material or a simple structure. When facing high-temperature environments, heat transfer is relatively fast, and it is not possible to effectively prevent heat loss from the furnace. The heat preservation layer of many furnace bodies is installed on the shell and door through complex welding or fixing methods. Once the heat preservation layer is damaged or needs to be replaced, it requires professional personnel to use special tools for disassembly and installation, which is cumbersome and time-consuming. Therefore, a thermal field structure for a vacuum atmosphere furnace for semiconductor heat treatment is proposed. Utility Model Content

[0003] The purpose of this invention is to provide a thermal field structure for a semiconductor heat treatment vacuum atmosphere furnace to solve the problems mentioned in the background art.

[0004] To achieve the above objectives, the present invention provides the following technical solution: a thermal field structure for a semiconductor heat treatment vacuum atmosphere furnace, comprising a shell for semiconductor heat treatment, a door on one side of the shell, and both the shell and the door are filled with a heat insulation layer. A support column is inserted into the bottom of the inner wall of the housing, and a loading plate is fixed to the top of the support column. The top of the loading plate is used to place the workpiece. A plurality of graphite heating rods are arranged around the loading plate, and the graphite heating rods are used to heat the inside of the shell. The graphite heating rod has a first connecting plate and a second connecting plate at both ends, a number of connecting posts are fixed on one side of the second connecting plate, and a graphite electrode is fixed on one side of the first connecting plate. The left-side housing has a first temperature measuring hole, and the right-side housing has a second temperature measuring hole.

[0005] Preferably, as described above, a plurality of screws extend through one side of the insulation layer, and both ends of the screws are threaded with a second nut.

[0006] Preferably, as described above, a first connecting rod and a second connecting rod are sleeved on the outer side of the screw, with both ends of the first connecting rod fixed to the outer side of the housing and both ends of the second connecting rod fixed to the outer side of the door.

[0007] Preferably, in the above-mentioned case, one of the second nuts is located on one side of the first connecting rod and the second connecting rod, and the other second nut is located on one side of the insulation layer.

[0008] Preferably, the two ends of the graphite heating rod are respectively inserted into one side of the first connecting plate and the second connecting plate, and both ends of the graphite heating rod are threaded with a first nut located on one side of the first connecting plate and the second connecting plate.

[0009] Preferably, the graphite electrode and the connecting post are both sealed and penetrate one side of the insulation layer, and one end of the graphite electrode and the connecting post is connected to the inner wall of the vacuum atmosphere furnace cavity.

[0010] Preferably, the housing has an insertion slot on one side, and the door is inserted into the insertion slot and connected to the housing in an airtight manner through a sealing structure.

[0011] Preferably, the first temperature measuring hole is used by an infrared thermometer to detect the temperature inside the housing, and the second temperature measuring hole is used by a thermocouple to extend into the housing for temperature measurement.

[0012] Compared with the prior art, the present invention, by adopting the above technical solution, has the following technical effects: First, the insulation layer consists of a three-layer structure of long-fiber cured felt filling the inner side of the shell and door, with decreasing density. This helps reduce heat transfer and effectively prevents heat loss from the furnace. The stable high-temperature operating window can be increased to 2200℃, which can reduce the initial cost while ensuring performance.

[0013] Second, the insulation layer can be quickly disassembled and assembled by the cooperation of the first connecting rod, the second connecting rod and the second nut, reducing the maintenance time to ≤1 hour and reducing maintenance costs.

[0014] Third, by inserting support columns into the bottom of the inner wall of the shell and fixing the loading plate on the top of the support columns, the thermal field volume is greatly increased. The increased thermal field volume can meet the needs of more workpieces to be heat treated at the same time, effectively improving production efficiency. Under the high temperature operating conditions of 2200℃, it can still maintain a stable working state, and the temperature uniformity can reach ±5℃ or less, providing a good heat treatment environment for the workpieces.

[0015] Fourth, the graphite electrode seal penetrates the insulation layer and connects to the graphite heating rod. After power is turned on, the current can be quickly conducted to the graphite heating rod to generate heat, providing a stable and efficient heating source for the workpiece inside the furnace. The first temperature measuring hole, in conjunction with an infrared thermometer, quickly and non-contactly acquires the temperature information inside the furnace by emitting and receiving infrared rays. The second temperature measuring hole allows a thermocouple to be inserted into a specific location inside the shell for temperature measurement, meeting the requirements of heat treatment processes with high temperature requirements. The dual temperature measurement methods complement each other, comprehensively and accurately monitoring the temperature inside the furnace, thereby achieving temperature control, ensuring uniform temperature control inside the furnace, and effectively meeting the stringent temperature requirements of semiconductor heat treatment, thus improving product quality. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a first-view structural diagram of the present invention; Figure 2 This is a schematic diagram of the second-view structure of the present invention; Figure 3 This is a schematic diagram of the loading plate structure of this utility model; Figure 4 This is a schematic diagram of the structure of the first graphite heating rod of this utility model; Figure 5 This is a schematic diagram of the structure of the insulation layer of this utility model; Figure 6 This is a schematic diagram of the structure of the second graphite heating rod of this utility model; Figure 7 This is a schematic diagram of the thermal insulation layer distribution structure of this utility model; Figure 8 This is a schematic diagram of the main structure of this utility model.

[0018] Explanation of reference numerals in the attached drawings: 1. Shell; 2. Door; 3. First connecting rod; 4. First temperature measuring hole; 5. Second temperature measuring hole; 6. Insulation layer; 7. First connecting plate; 8. Graphite electrode; 9. Loading plate; 10. First nut; 11. Support column; 12. Second connecting plate; 13. Connecting column; 14. Graphite heating rod; 15. Second connecting rod; 16. Second nut. Detailed Implementation

[0019] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0020] It should be noted that the structures, proportions, sizes, etc., shown in the accompanying drawings of this specification are only for the purpose of assisting those skilled in the art in understanding and reading the content disclosed in the specification, and are not intended to limit the conditions under which this application can be implemented. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportions, or adjustments to the size should still fall within the scope of the technical content disclosed in this application, provided that they do not affect the effects and purposes that this application can produce.

[0021] Example Please see Figure 1-8 This utility model provides a technical solution: a thermal field structure for a semiconductor heat treatment vacuum atmosphere furnace, including a shell 1 for semiconductor heat treatment, a door 2 on one side of the shell 1, and insulation layers 6 filling the inner sides of both the shell 1 and the door 2. The shell 1 and the door 2 are made of stainless steel, and the insulation layer 6 is made of long-fiber cured felt. The insulation layer 6 has a three-layer structure, with the density of the long-fiber cured felt decreasing from the inside to the outside, and the inner layer having a density of 0.17 g / cm³. 3 The middle layer is 0.16 g / cm³. 3 The outer layer is 0.13 g / cm³. 3 The high-temperature stable operation window is increased to 2200℃ while reducing the initial cost; the inner high-density felt reduces heat conduction to the shell, and the outer low-density felt reduces weight and material cost, thus improving the overall thermal insulation performance. An insertion slot is provided on one side of the shell 1, and the door 2 is inserted into the insertion slot and forms an airtight connection with the shell 1 through a sealing structure.

[0022] A support column 11 is inserted into the bottom of the inner wall of the shell 1, and a loading plate 9 is fixed on the top of the support column 11. The top of the loading plate 9 is used to place the workpiece. The surface of the loading plate 9 greatly increases the thermal field volume. Compared with traditional products, the effective loading volume of the loading plate 9 is increased by ≥40%, and the temperature inside the furnace is made as uniform as possible. Under high temperature operation of 2200℃, the temperature uniformity can reach ±5℃ or less. A plurality of graphite heating rods 14 are arranged around the loading plate 9, which are used to heat the inside of the housing 1. A first connecting plate 7 and a second connecting plate 12 are respectively provided at both ends of the graphite heating rods 14. A plurality of connecting posts 13 are fixed to one side of the second connecting plate 12, and a graphite electrode 8 is fixed to one side of the first connecting plate 7. The components include the first connecting plate 7, the loading plate 9, the first nut 10, the support post 11, the second connecting plate 12, and the connecting posts 13. The screw and the second nut 16 are both made of graphite. The graphite heating rods 14 radiate heat evenly. The first connecting plate 7 is connected to an external power source through the graphite electrode 8, and the second connecting plate 12 forms a closed loop through the connecting posts 13, achieving efficient and uniform heating.

[0023] The left housing 1 has a first temperature measuring hole 4, and the right housing 1 has a second temperature measuring hole 5. The first temperature measuring hole 4 is used for an infrared thermometer to detect the temperature inside the housing 1, and the second temperature measuring hole 5 is used for a thermocouple to be inserted into the housing 1 to measure the temperature. The dual temperature measurement ensures uniform temperature control. The inner wall of the second temperature measuring hole 5 is provided with a sealing structure (not shown in the figure), which is used to seal with the thermocouple.

[0024] Several screws run through one side of the insulation layer 6. Each end of the screw is threaded with a second nut 16. A first connecting rod 3 and a second connecting rod 15 are sleeved on the outside of the screws. Both ends of the first connecting rod 3 are fixed to the outside of the housing 1, and both ends of the second connecting rod 15 are fixed to the outside of the door 2. The first connecting rod 3 is set along the outside of the housing 1, and the second connecting rod 15 is set along the outside of the door 2. One of the second nuts 16 is located on one side of the first connecting rod 3 and the second connecting rod 15, and the other second nut 16 is located on one side of the insulation layer 6.

[0025] The two ends of the graphite heating rod 14 are respectively inserted into one side of the first connecting plate 7 and the second connecting plate 12. Both ends of the graphite heating rod 14 are threaded with a first nut 10 located on one side of the first connecting plate 7 and the second connecting plate 12. The graphite electrode 8 and the connecting post 13 are sealed and penetrate one side of the insulation layer 6. One end of the graphite electrode 8 and the connecting post 13 is connected to the inner wall of the cavity of the vacuum atmosphere furnace. The graphite electrode 8 is used to supply power to the graphite heating rod 14.

[0026] Working principle: The thermal field structure of the semiconductor heat treatment vacuum atmosphere furnace is mainly composed of a stainless steel shell 1. A door 2 is provided on one side of the shell 1, and an insertion slot is provided on the other side of the shell 1. The door 2 is inserted into the insertion slot and forms an airtight connection with the shell 1 through a sealing structure, thereby ensuring that a vacuum environment can be formed inside the furnace to meet the requirements of the atmosphere environment for semiconductor heat treatment. Both the inner sides of the shell 1 and the door 2 are filled with a three-layer structure of long-fiber cured felt as an insulation layer 6. The decreasing density helps to reduce heat transfer and effectively prevents heat loss from the furnace. While increasing the high-temperature stable operation window to 2200℃, it can also reduce the initial cost. At the same time, through the cooperation of the first connecting rod 3, the second connecting rod 15 and the second nut 16, the insulation layer 6 can be quickly disassembled and assembled, reducing the maintenance time to ≤1 hour and the maintenance cost to about 60%.

[0027] A support column 11 is inserted into the bottom of the inner wall of the shell 1, and a loading plate 9 is fixed on the top of the support column 11. The top of the loading plate 9 is used to place the workpiece, which greatly increases the thermal field volume and can meet the needs of more workpieces to be heat treated at the same time. Under the high temperature of 2200℃, the temperature uniformity can reach ±5℃ or less, ensuring the consistency of the heat treatment quality of the workpiece.

[0028] The graphite electrode 8 and the connecting column 13 are both sealed and penetrate one side of the insulation layer 6. One end of the graphite electrode 8 and the connecting column 13 is connected to the inner wall of the vacuum atmosphere furnace. The graphite electrode 8 is used to supply power to the graphite heating rod 14. When the power is turned on, the current is conducted through the graphite electrode 8 to the graphite heating rod 14, and the graphite heating rod 14 heats up, thereby heating the workpiece in the furnace.

[0029] The first temperature measuring hole 4 is used by an infrared thermometer to detect the temperature inside the housing 1. The infrared thermometer measures the surface temperature of an object by emitting and receiving infrared rays, enabling it to quickly and non-contactly acquire temperature information inside the furnace. The second temperature measuring hole 5 is used by a thermocouple inserted into the housing 1 to measure the temperature. A thermocouple is a temperature sensor that determines the temperature by measuring the thermoelectric potential in a thermocouple circuit composed of two different metal conductors. This allows for more accurate measurement of the temperature at a specific location inside the furnace. The dual temperature measurement method ensures accurate monitoring of the temperature inside the furnace, thereby achieving precise temperature control, ensuring uniform temperature control, and meeting the stringent temperature requirements of semiconductor heat treatment.

[0030] In summary, by filling the inner sides of the shell 1 and the door 2 with a three-layer structure of long-fiber cured felt as the insulation layer 6, with decreasing density, heat transfer is reduced, effectively preventing heat loss from the furnace. The high-temperature stable operation window can be increased to 2200℃, which can reduce the initial cost while ensuring performance.

[0031] The first connecting rod 3, the second connecting rod 15, and the second nut 16 work together to allow the insulation layer 6 to be quickly disassembled and assembled, reducing the time required for a single maintenance to ≤1 hour and lowering maintenance costs.

[0032] By inserting a support column 11 into the bottom of the inner wall of the housing 1, and fixing a loading plate 9 to the top of the support column 11, the thermal field volume is greatly increased. The increased thermal field volume can meet the needs of more workpieces to be heat treated at the same time, effectively improving production efficiency. Under the high temperature operating conditions of 2200℃, it can still maintain a stable working state, and the temperature uniformity can reach ±5℃ or less, providing a good heat treatment environment for the workpieces.

[0033] The graphite electrode 8 is sealed through the insulation layer 6 and connected to the graphite heating rod 14. After the power is turned on, the current can be quickly conducted to the graphite heating rod 14 to make it heat up, providing a stable and efficient heating source for the workpiece in the furnace. The first temperature measuring hole 4, together with the infrared thermometer, uses the method of emitting and receiving infrared rays to quickly and non-contactly obtain the temperature information in the furnace. The second temperature measuring hole 5 allows the thermocouple to be inserted into a specific position inside the shell 1 to measure the temperature at a specific position in the furnace, which meets the requirements of heat treatment processes with high temperature requirements. The dual temperature measuring methods complement each other, comprehensively and accurately monitor the temperature in the furnace, thereby achieving temperature control, ensuring uniform temperature control in the furnace, and well meeting the strict temperature requirements of semiconductor heat treatment, thus improving product quality.

[0034] Those skilled in the art will understand that the features described in the various embodiments and / or claims of this utility model can be combined or combined in various ways, even if such combinations or combinations are not explicitly described in this utility model. In particular, the features described in the various embodiments and / or claims of this utility model can be combined or combined in various ways without departing from the spirit and teachings of this utility model. All such combinations and / or combinations fall within the scope of this utility model.

Claims

1. A thermal field structure for a semiconductor heat treatment vacuum atmosphere furnace, comprising a shell (1) for semiconductor heat treatment, characterized in that, The shell (1) has a door (2) on one side, and the inner sides of the shell (1) and the door (2) are filled with a heat insulation layer (6). A support column (11) is inserted into the bottom of the inner wall of the housing (1), and a loading plate (9) is fixed to the top of the support column (11). The top of the loading plate (9) is used to place the workpiece. A plurality of graphite heating rods (14) are arranged around the loading plate (9), and the graphite heating rods (14) are used to heat the inside of the shell (1); The graphite heating rod (14) has a first connecting plate (7) and a second connecting plate (12) at both ends. A number of connecting posts (13) are fixed on one side of the second connecting plate (12), and a graphite electrode (8) is fixed on one side of the first connecting plate (7). The left-side housing (1) has a first temperature measuring hole (4), and the right-side housing (1) has a second temperature measuring hole (5).

2. The thermal field structure of a semiconductor heat treatment vacuum atmosphere furnace according to claim 1, characterized in that, Several screws are threaded through one side of the insulation layer (6), and a second nut (16) is threaded to both ends of the screws.

3. The thermal field structure of a semiconductor heat treatment vacuum atmosphere furnace according to claim 2, characterized in that, The screw is sleeved with a first connecting rod (3) and a second connecting rod (15). Both ends of the first connecting rod (3) are fixed to the outside of the housing (1), and both ends of the second connecting rod (15) are fixed to the outside of the door (2).

4. The thermal field structure of a semiconductor heat treatment vacuum atmosphere furnace according to claim 3, characterized in that, One of the second nuts (16) is located on one side of the first connecting rod (3) and the second connecting rod (15), while the other second nut (16) is located on one side of the insulation layer (6).

5. The thermal field structure of a semiconductor heat treatment vacuum atmosphere furnace according to claim 1, characterized in that, The two ends of the graphite heating rod (14) are respectively inserted into one side of the first connecting plate (7) and the second connecting plate (12), and both ends of the graphite heating rod (14) are threaded with a first nut (10) located on one side of the first connecting plate (7) and the second connecting plate (12).

6. The thermal field structure of a semiconductor heat treatment vacuum atmosphere furnace according to claim 5, characterized in that, The graphite electrode (8) and the connecting column (13) are sealed and penetrate one side of the insulation layer (6), and one end of the graphite electrode (8) and the connecting column (13) is connected to the inner wall of the cavity of the vacuum atmosphere furnace.

7. The thermal field structure of a semiconductor heat treatment vacuum atmosphere furnace according to claim 1, characterized in that, The housing (1) has an insertion groove on one side, and the door (2) is inserted into the insertion groove and forms an airtight connection with the housing (1) through a sealing structure.

8. The thermal field structure of a semiconductor heat treatment vacuum atmosphere furnace according to claim 1, characterized in that, The first temperature measuring hole (4) is used for the infrared thermometer to detect the temperature inside the housing (1), and the second temperature measuring hole (5) is used for the thermocouple to extend into the housing (1) to measure the temperature.

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