A detection system of a semiconductor machine

Abstract

The utility model provides a kind of detection system of semiconductor machine, and detection system includes multiple pipelines, pipeline is divided into air inlet pipeline and exhaust pipeline;The process cavity of each semiconductor machine is connected with at least one air inlet pipeline and at least one exhaust pipeline;Multiple metal parts, at least one metal part is provided in exhaust pipeline;Electrical detection module, electrically connected with multiple metal parts, to detect the electrical parameter of metal part when metal part and acidic gas in exhaust pipeline react;Host computer, electrically connected with electrical detection module, to record and store the electrical parameter of multiple metal parts.The utility model can prevent acid gas or other chemical substances from corroding parts, or prevent crystallization from forming on the surface of the parts to affect the stability of the semiconductor machine.

Description

Technical Field

[0001] This utility model relates to the field of semiconductors, and in particular to a testing system for semiconductor equipment. Background Technology

[0002] The piping area of ​​a semiconductor equipment is a critical region connecting the process chamber and the exhaust gas treatment system. Its function is to introduce process gases into the chamber and expel byproducts such as acidic gases and vapors from the reaction. Due to long-term, slow leakage of acidic gases from the chamber, crystals can form in the piping area, corroding components within it. Currently, this slow leakage is addressed through periodic manual cleaning of the crystals. However, the frequency of these manual inspections is difficult to control, and subjective factors by the inspectors can lead to omissions. Therefore, improvements are needed. Utility Model Content

[0003] In view of the shortcomings of the prior art described above, the purpose of this utility model is to provide a detection system for semiconductor equipment, which improves the problem of crystallization in the pipeline area of ​​semiconductor equipment leading to corrosion of parts in the prior art.

[0004] To achieve the above and other related objectives, this utility model provides a testing system for a semiconductor machine, comprising:

[0005] Multiple pipelines, which are divided into inlet pipelines and exhaust pipelines; the process chamber of each semiconductor machine is connected to at least one of the inlet pipelines and at least one of the exhaust pipelines;

[0006] Multiple metal components, with at least one of the metal components disposed inside the exhaust pipe;

[0007] An electrical detection module is electrically connected to multiple metal components to detect the electrical parameters of the metal components when they react with acidic gas in the exhaust pipe.

[0008] The host computer is electrically connected to the electrical detection module to record and store the electrical parameters of multiple metal parts.

[0009] In one embodiment of the present invention, the metal component includes a plurality of metal sheets and a metal column, wherein the metal column connects the plurality of metal sheets through the metal sheets, and there is a gap between adjacent metal sheets.

[0010] In one embodiment of the present invention, a scale line is provided on the surface of the metal sheet, and the scale line is distributed along the direction from the edge of the metal sheet to the center of the metal sheet.

[0011] In one embodiment of this utility model, the scale lines are in the shape of multiple concentric circles, and the center of the multiple concentric circles of the scale lines is the same as the center of the metal sheet.

[0012] In one embodiment of this utility model, the scale unit of the graduation line is 1mm to 1.5mm, the diameter of the metal sheet is 45mm to 55mm, and the thickness of the metal sheet is 0.5mm to 1.5mm.

[0013] In one embodiment of this utility model, the plurality of metal sheets are parallel to each other, and the distance between two adjacent metal sheets is 2.5mm to 7.5mm.

[0014] In one embodiment of this utility model, the centers of the plurality of metal sheets are located on the same straight line, and the straight line is parallel to the axis of the metal column;

[0015] Alternatively, along the axial direction of the metal column, two adjacent metal sheets are offset from each other, and the centers of the two adjacent metal sheets are located on opposite sides of the axial direction of the metal column.

[0016] In one embodiment of this utility model, the plurality of metal sheets are circular, and the metal pillar penetrates the center of the plurality of metal sheets;

[0017] Alternatively, the multiple metal sheets may be polygonal, with the metal pillar penetrating the center of the multiple metal sheets.

[0018] In one embodiment of this utility model, the metal component reacts with the acidic gas in the pipeline, and the corrosion thickness t of the metal component satisfies:

[0019] Wherein, C is the corrosion rate of the metal part, which is obtained by measuring the change value of the scale line on the metal sheet over a period of time; T0 is the replacement cycle of the metal part; K is the utilization coefficient, which is a non-zero constant; and S is the preset safety margin, which is a non-zero constant.

[0020] In one embodiment of this utility model, the electrical detection module includes:

[0021] A transimpedance amplifier circuit unit is electrically connected to a plurality of said metal components to convert the current values ​​generated on the plurality of said metal components into voltage values;

[0022] An analog-to-digital converter is electrically connected to the transimpedance amplifier circuit unit to receive the voltage value transmitted by the transimpedance amplifier circuit unit and convert the analog value corresponding to the voltage value into a digital value.

[0023] As described above, the detection system for the pipeline area of ​​a semiconductor machine according to this utility model has the following beneficial effects: by setting a metal component inside the pipeline of the semiconductor machine, the metal component can undergo an electrochemical reaction with acidic gas in the air, which can prevent acid gas or other chemical substances from corroding the components, or prevent crystal formation on the surface of the components from affecting the stability of the semiconductor machine. Furthermore, the electrical parameters of the reaction between the metal component and the acidic gas can be recorded long-term via a host computer. Attached Figure Description

[0024] Figure 1 This is a structural block diagram of a detection system for the pipeline area of ​​a semiconductor instrument provided in an embodiment of the present invention.

[0025] Figure 2 This is a perspective view of a metal part provided in an embodiment of the present utility model.

[0026] Figure 3 This is a front view of a metal part provided in an embodiment of the present invention.

[0027] Figure 4 This is a top view of a metal part provided in an embodiment of the present invention.

[0028] Figure 5 A location distribution diagram of the pipeline area and the machine area provided for an embodiment of this utility model.

[0029] Figure 6 This is a schematic diagram of a transimpedance amplifier circuit provided in one embodiment of the present invention. Detailed Implementation

[0030] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model. It should be noted that, unless otherwise specified, the following embodiments and features can be combined with each other.

[0031] It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation. In actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0032] In the following description, numerous details are explored to provide a more thorough explanation of embodiments of the present invention. However, it will be apparent to those skilled in the art that embodiments of the present invention may be practiced without these specific details. In other embodiments, well-known structures and devices are shown in block diagram form rather than in detail to avoid obscuring embodiments of the present invention.

[0033] Please see Figures 1 to 6 This invention proposes a detection system for the piping area of ​​a semiconductor machine, applicable to the piping area of ​​a semiconductor machine, enhancing the protection capability of the piping area. This invention can prevent acid gases or other chemical substances from corroding parts, or prevent crystal formation on the surface of parts that could affect the stability of the semiconductor machine. Detailed descriptions are provided below using specific embodiments.

[0034] Please see Figure 1 , Figure 2 and Figure 3 In one embodiment of this utility model, the testing system of the semiconductor machine may include a pipeline 10, a metal part 20, an electrical testing module 30, and a host computer 40.

[0035] Specifically, pipe 10, corresponding to the semiconductor equipment, is a critical area connecting the process chamber and the exhaust gas treatment system. The function of pipe 10 is to introduce process gases into the chamber and discharge byproducts such as acidic gases and vapors from the reaction. Due to long-term, slow leakage of acidic gases from the chamber, crystals can form in pipe 10, leading to corrosion of components within the pipe area. There can be multiple pipes 10, and each pipe 10 is connected to a specific semiconductor equipment. Please refer to [link / reference]. Figure 5 Pipeline 10 can be located in the pipeline layer on a lower floor, and the process area 101 corresponding to the semiconductor equipment can be located in the equipment layer on a higher floor.

[0036] For example, the pipeline 10 is divided into an intake pipeline 10 and an exhaust pipeline 10, and the process cavity of each semiconductor machine is connected to at least one intake pipeline 10 and at least one exhaust pipeline 10.

[0037] Specifically, the metal component 20 is disposed within the exhaust pipe 10, for example, the metal component 20 is independently suspended or fixed to the inner wall of the exhaust pipe 20. There are multiple metal components 20, and at least one metal component 20 can be disposed within one exhaust pipe 10. The metal component 20 reacts with the acidic gas within the exhaust pipe 10. By sacrificing the metal component 20, it can prevent acidic gases or other chemical substances from corroding the components of the semiconductor equipment, or prevent the formation of crystals on the surface of the semiconductor equipment components that could affect the stability of the semiconductor equipment.

[0038] For example, the metal part 20 can be formed of a zinc-magnesium alloy, and the semiconductor assembly can be formed of stainless steel. Zinc-magnesium alloys (with a magnesium content of 5%-10%) exhibit more stable sacrificial anode properties in acidic environments than pure metals. By forming intermetallic compounds, zinc-magnesium alloys refine grains and promote uniform corrosion, thus inhibiting localized perforation.

[0039] Specifically, the electrical detection module 30 is electrically connected to the metal components 20 to detect the electrical parameters of the metal components 20 when they react with the acidic gas in the pipeline 10. These electrical parameters include, for example, current and voltage values. The host computer 40 is electrically connected to the electrical detection module 30 to record and store the electrical parameters of the metal components 20.

[0040] As described above, the metal component 20 and the semiconductor device are independent. The metal component 20 can undergo an electrochemical reaction with acidic gases in the air, which is an environmentally mediated sacrificial anode electrochemical reaction protection method. The anode is the metal component 20, and the cathode is the semiconductor device. The metal component 20 and the semiconductor device have a protector-protected relationship; acidic gases in the air always react more readily with metals. The metal component 20 is more readily reacting, while the semiconductor device is less likely to react with acidic gases, thus achieving the purpose of sacrificing the metal component 20 to protect the semiconductor device.

[0041] Therefore, it is clear that the metal part 20 and the semiconductor machine should not be directly connected. Their protection relationship can be achieved through the mediation of ambient acid gas. In this embodiment, the installation complexity is simplified and the risk of electrical interference is avoided.

[0042] Please see Figure 2 , Figure 3 and Figure 4 In one embodiment of the present invention, the metal component 20 includes a plurality of metal sheets 202 and metal pillars 201.

[0043] Specifically, such as Figure 2 and Figure 4 As shown, in a metal component 20, there is one metal pillar 201 and multiple metal sheets 202. The metal pillar 201 can pass through and connect multiple metal sheets 202, and there is a gap between two adjacent metal sheets 202.

[0044] Specifically, by connecting multiple metal plates 202 through the metal column 201, the multiple metal plates 202 can fully contact the acid gas, increasing the contact area between the metal plates 202 and the acid gas, maximizing the effective reaction area in a limited space, and improving the acid gas interception efficiency.

[0045] Please see Figure 2 , Figure 3 and Figure 4 In one embodiment of the present invention, a scale line 203 is provided on the metal sheet 202. The scale line 203 is disposed on the surface of the metal sheet 202 and is distributed along the direction from the edge of the metal sheet 202 to the center of the metal sheet 202.

[0046] For example, the scale lines 203 can be in the shape of multiple concentric circles, and the multiple concentric circles corresponding to the scale lines 203 have the same center as the metal sheet 202. Alternatively, the scale lines 203 can also be distributed as straight line segments (not shown in the figure). The scale unit of the scale lines 203 on the metal sheet 202 can be 1 mm to 1.5 mm, the diameter of the metal sheet 202 can be 45 mm to 55 mm, and the thickness of the metal sheet 202 can be 0.5 mm to 1.5 mm. The multiple metal sheets are parallel to each other, and the distance between two adjacent metal sheets is 2.5 mm to 7.5 mm.

[0047] Specifically, by observing the changes in the scale line 203 on the corresponding metal sheet 202 over a period of time, the corrosion status of the metal sheet 202 over that period of time can be calculated, thereby roughly determining the corrosion status of the metal sheet 202 in different pipelines 10.

[0048] Please see Figure 2 , Figure 3 and Figure 4 In one embodiment of the present invention, the centers of a plurality of metal sheets 202 are located on the same straight line, and the straight line is parallel to or the same as the axis of the metal column 201.

[0049] Alternatively, along the axial direction of the metal column 201, two adjacent metal pieces 202 are offset from each other, and the centers of the two adjacent metal pieces 202 are located on both sides of the axial direction of the metal column 201.

[0050] Specifically, when multiple metal sheets 202 have the same shape and are aligned with each other, i.e. when multiple metal sheets 202 are coaxially stacked, the centers of the metal sheets 202 are aligned and the airflow passes through axially.

[0051] Specifically, when multiple metal sheets 202 have the same shape and are offset from each other, i.e. when multiple metal sheets 202 are stacked in an alternating manner, the metal sheets 202 are misaligned with each other, which can increase the contact efficiency of acidic gas.

[0052] Please see Figure 2 , Figure 3 and Figure 4 In one embodiment of this utility model, the plurality of metal sheets 202 are circular, and the metal pillar 201 penetrates the center of the plurality of metal sheets 202. Alternatively, the plurality of metal sheets 202 are polygonal, and the metal pillar 201 penetrates the center of the plurality of metal sheets 202.

[0053] Specifically, the shape of the metal sheet 202 is not limited. In this embodiment, only circular and polygonal shapes are used as examples. In other embodiments, it can also be elliptical, fan-shaped, or other regular or irregular shapes.

[0054] Please see Figure 1 and Figure 2 In one embodiment of this utility model, the metal part 20 reacts with the acidic gas in the pipeline 10, and the corrosion thickness t of the metal part 20 satisfies:

[0055] Where C is the corrosion rate of the metal part 20, which is obtained by measuring the change value of the scale line 203 on the corresponding metal sheet 202 over a period of time; T0 is the replacement cycle of the metal part 20; K is the utilization coefficient, which is a non-zero constant of 0.7; and S is the preset safety margin, which is a non-zero constant.

[0056] Specifically, using a 1mm metal sheet 202 can meet the replacement cycle of 6 months.

[0057] Please see Figure 1 and Figure 2 In one embodiment of this utility model, the metal component 20 reacts with the acidic gas in the pipeline 10, and the corresponding acid gas absorption rate J satisfies:

[0058] Where e is a natural constant, A is the contact area between the metal part 20 and the acidic gas in the exhaust pipe 10, and is negatively correlated with the distance between two adjacent metal pieces 202, and T1 is the contact time between the metal part 20 and the acidic gas in the exhaust pipe 10, and is positively correlated with the distance between two adjacent metal pieces 202.

[0059] Specifically, experimental data showed that when the distance between two adjacent metal sheets 202 was 5 mm, the sulfuric acid vapor absorption rate reached 92%.

[0060] Please see Figure 1 , Figure 2 and Figure 6 In one embodiment of this utility model, the electrical detection module may include a transimpedance amplifier circuit unit and an analog-to-digital converter unit.

[0061] Specifically, the transimpedance amplifier circuit unit is electrically connected to multiple metal components 20 to convert the current values ​​generated on the multiple metal components 20 into voltage values. For example... Figure 6 As shown, the metal part 20 reacts with the acidic gas to generate an electric current, and the current value is processed by... Figure 6 The output of the transimpedance amplifier circuit is a voltage value Vout.

[0062] Specifically, the analog-to-digital converter (ADC) is electrically connected to the transimpedance amplifier circuit unit to receive the voltage value transmitted by the transimpedance amplifier circuit unit and convert the corresponding analog value into a digital value. Afterward, the ADC can also upload the digital voltage value to the host computer 40 for storage in graphical form. The ADC can be any electronic component that converts analog signals into digital signals, such as a 3-channel 16-bit analog-to-digital converter SC1665.

[0063] Specifically, the storage function of the host computer 40 provides strong data support for the maintenance of the metal parts 20: by analyzing historical data, the condition of the exhaust pipe 10 can be summarized. Potential problems can be predicted in advance, allowing for targeted maintenance planning of the semiconductor equipment and improving the overall reliability and stability of the semiconductor equipment.

[0064] Furthermore, by etching graduation lines 203 onto the metal sheet 202 and comparing the changes in graduation lines 203 over a period of time, the long-term acidic gas reaction within the exhaust pipe 10 can be determined, thus allowing for a quantitative assessment of leakage within different exhaust pipes 10. This enables continuous protection and monitoring of the exhaust pipe 10, allowing for early detection and maintenance of the semiconductor equipment should a long-term, slow leakage of acidic gas within the exhaust pipe 10 occur.

[0065] In summary, the detection system for the piping area of ​​a semiconductor machine disclosed in this utility model has an unexpected technical effect: by placing a metal component inside the piping of the semiconductor machine, the metal component can undergo an electrochemical reaction with acidic gases in the air, which can prevent acid gases or other chemical substances from corroding the components or prevent crystal formation on the surface of the components from affecting the stability of the semiconductor machine. Furthermore, the electrical parameters of the reaction between the metal component and the acidic gas can be recorded long-term via a host computer. Therefore, this utility model effectively overcomes the various shortcomings of the prior art and has high industrial application value.

[0066] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A testing system for a semiconductor machine, characterized in that, include: Multiple pipelines, which are divided into inlet pipelines and exhaust pipelines; the process chamber of each semiconductor machine is connected to at least one of the inlet pipelines and at least one of the exhaust pipelines; Multiple metal components, with at least one of the metal components disposed inside the exhaust pipe; An electrical detection module is electrically connected to multiple metal components to detect the electrical parameters of the metal components when they react with acidic gas in the exhaust pipe. The host computer is electrically connected to the electrical detection module to record and store the electrical parameters of multiple metal parts.

2. The detection system for a semiconductor machine according to claim 1, characterized in that, The metal component includes multiple metal sheets and metal pillars, with the metal pillars connecting the multiple metal sheets through each other, and a gap existing between adjacent metal sheets.

3. The detection system for a semiconductor machine according to claim 2, characterized in that, The surface of the metal sheet is provided with scale lines, which are distributed along the edge of the metal sheet to the center of the metal sheet.

4. The detection system for a semiconductor machine according to claim 3, characterized in that, The scale lines are in the shape of multiple concentric circles, and the center of the multiple concentric circles of the scale lines is the same as the center of the metal sheet.

5. The detection system for a semiconductor machine according to claim 3, characterized in that, The scale unit of the graduation line is 1mm to 1.5mm, the diameter of the metal sheet is 45mm to 55mm, and the thickness of the metal sheet is 0.5mm to 1.5mm.

6. The detection system for a semiconductor machine according to claim 2, characterized in that, The plurality of metal sheets are parallel to each other, and the distance between two adjacent metal sheets is 2.5mm to 7.5mm.

7. The detection system for a semiconductor machine according to claim 2, characterized in that, The centers of the plurality of metal sheets are located on the same straight line, and the straight line is parallel to or the same as the axis of the metal column; Alternatively, along the axial direction of the metal column, with the centers of two adjacent metal sheets located on opposite sides of the axial direction of the metal column.

8. The detection system for a semiconductor machine according to claim 2, characterized in that, The plurality of metal sheets are circular, and the metal pillar passes through the center of the plurality of metal sheets; Alternatively, the multiple metal sheets may be polygonal, with the metal pillar penetrating the center of the multiple metal sheets.

9. The detection system for a semiconductor machine according to claim 3, characterized in that, The metal component reacts with the acidic gas in the pipeline, and the corrosion thickness t of the metal component satisfies: Wherein, C is the corrosion rate of the metal part, which is obtained by measuring the change value of the scale line on the metal sheet over a period of time; T0 is the replacement cycle of the metal part; K is the utilization coefficient, which is a non-zero constant; and S is the preset safety margin, which is a non-zero constant.

10. The detection system for a semiconductor machine according to claim 1, characterized in that, The electrical testing module includes: A transimpedance amplifier circuit unit is electrically connected to a plurality of said metal components to convert the current values ​​generated on the plurality of said metal components into voltage values; An analog-to-digital converter is electrically connected to the transimpedance amplifier circuit unit to receive the voltage value transmitted by the transimpedance amplifier circuit unit and convert the analog value corresponding to the voltage value into a digital value.

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